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TWI442582B - 用於太陽能電池的氧化鎘鋅緩衝層 - Google Patents

用於太陽能電池的氧化鎘鋅緩衝層 Download PDF

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TWI442582B
TWI442582B TW100134271A TW100134271A TWI442582B TW I442582 B TWI442582 B TW I442582B TW 100134271 A TW100134271 A TW 100134271A TW 100134271 A TW100134271 A TW 100134271A TW I442582 B TWI442582 B TW I442582B
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Chungho Lee
Zhibo Zhao
Benyamin Buller
Rui Shao
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First Solar Inc
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Description

用於太陽能電池的氧化鎘鋅緩衝層
本發明係關於光伏打結構、裝置及其形成方法。
本申請案根據35 U.S.C.§119(e)之規定主張2010年9月22日申請之美國臨時專利申請案第61/385,398號的優先權，該案以引用的方式併入本文中。
光伏打裝置(諸如太陽能電池)可包含一半導體，該半導體吸收光並且將其轉換成電子-電洞對。一半導體接面(例如，一p-n接面)分離光生載子(電子及電洞)。一接觸件允許電流流至外部電路。最近，光伏打裝置已使用導電透明薄膜以自入射光產生電荷。需要繼續改良此類薄膜光伏打裝置之效能。
在下列詳細描述中，參考形成其之一部分的附圖，且圖中經由圖解說明而展示可實踐之特定實施例。應瞭解遍及圖式相同參考數字表示相同元件。足夠詳細地描述此等實例性實施例以使熟習此項技術者能夠實踐該等實施例。應瞭解可利用其他實施例，並且可作出結構、材料及電改變，下文僅詳細地討論其中之一些。
使用於薄膜光伏打裝置之一基板結構的一組態由沈積於一玻璃材料上之多層組成。圖1中展示一例示性基板結構100，其包含一基板10、一或多個障壁材料20、一或多個透明導電氧化物(TCO)30及一或多個緩衝材料40。TCO材料30(單獨地或與其他材料、層或膜組合)可作為一第一接觸件。此等材料(10、20、30、40)之各者可包含一或多個層或膜、一或多個不同類型的材料及/或具有不同組合物之相同材料類型。
例如，基板10可為玻璃，諸如鈉鈣玻璃、低鐵玻璃、太陽能浮式玻璃(solar float glass)或其他適當的玻璃。障壁材料20可為氧化矽、氧化矽鋁、氧化錫、或其他適當的材料或其組合。TCO材料30可為摻雜氟之氧化錫、氧化鎘錫、氧化鎘銦、摻雜鋁之氧化鋅或其他透明導電氧化物或其組合。下文更詳細地描述緩衝材料40。
如圖2中所展示，基板結構100可包含於一裝置200中，例如，一光伏打裝置(諸如一太陽能電池)。另外，裝置200包含一窗材料50、一半導體材料60及一第二接觸件70。此等材料(50、60、70)之各者可包含一或多個層或膜、一或多個不同類型的材料及/或具有不同組合物之相同材料類型。
窗材料50可為一半導體材料，諸如CdS、ZnS、CdZnS、ZnMgO、Zn(O,S)或其他適當的光伏打半導體材料。半導體材料60可為CdTe、CIGS、非晶矽或任意其他適當的光伏打半導體材料。第二接觸件70可為一金屬或其他高導電材料，諸如鉬、鋁或銅。
儘管材料10、20、30、40、50、60、70係展示為堆疊成基板10在底部上，然而材料10、20、30、40、50、60、70可經反轉，使得第二接觸件70在底部上或以一水平定向配置。可視情況在基板結構100或裝置200中包含額外材料、層及/或膜，尤其是諸如AR塗層、色彩抑制層。
直接接觸半導體材料60的緩衝材料40對於裝置200之效能及穩定性是重要的。例如，在使用CdTe(或類似材料)作為半導體材料60的一裝置200中，與TCO材料30相比較，緩衝材料40係一較高電阻材料，且為窗材料50與TCO材料30提供一介面。在太陽能電池效能參數中，開路電壓(Voc)及短路電導(Gsc)係與緩衝材料40設計緊密相關。
根據一實施例，緩衝材料40包括一單一層GZnO，其中G係Cd或Sn。在另一實施例中，緩衝材料40包括一層GZnO及一層任意其他透明導電材料。在另一實施例中，緩衝材料40包含一層GZnO及一層SnOx 。緩衝材料40可具有自約0.1奈米至約1000奈米或自約0.1奈米至約300奈米的一厚度。
在一實施例中，一裝置200包含一玻璃10、SiAlOx 的一障壁材料20(約2000埃)、鎘錫酸鹽之一TCO材料30(約2000埃)、GZnO之一緩衝材料40(約750埃)、CdS之一窗材料50(約750埃)、CdTe之一半導體材料60(約3微米)及一高導電材料(例如，鉬、鋁或銅)之一第二接觸件。
在另一實施例中，一裝置200包含一玻璃10、包括一層SnOx 及一層SiAlOx 的障壁材料20(總共約500埃)、SnO2 ：F之一TCO材料30(約4000埃)、GZnO之一緩衝材料40(約750埃)、CdS之一窗材料50(約750埃)、CdTe之一半導體材料60(約3微米)及一高導電材料(例如，鉬、鋁、銅)之一第二 接觸件。
在上述各實施例中，G對Zn之比率可為從約1：100至約100：1。
可摻雜GZnO材料或整個緩衝材料40。可使用摻雜劑來達成緩衝材料40之比TCO材料30更令人期望之一導電率。在一實施例中，緩衝材料40之導電率比TCO材料30小。摻雜劑可為n型或p型元素。例如，I族元素(例如，Li、Na及K)及V族元素(例如，N、P、As、Sb及Bi)係p型候選者，且III族元素(例如，B、Al、Ga及In)及VII族元素(例如，F、Cl、Br、I及At)係n型候選者。在一實施例中，緩衝材料40中(或GZnO材料中)摻雜劑的有效濃度係在約每立方厘米1×1014 個原子至約每立方厘米1×1020 個原子之間。
緩衝材料40在TCO材料30(高導電)與窗材料50(較高電阻)之間提供一介面。為最佳化該介面，應在TCO材料30與窗材料50之間存在一良好能帶排列。此可藉由調整緩衝材料40摻雜而達成。例如，若一CdS窗材料50係薄的，則其可變成非保形且某些緩衝材料40將直接接觸半導體材料60(例如，CdTe)，此將改變能帶排列。因此，取決於CdS窗材料50之厚度或摻雜位準，選擇緩衝材料40摻雜以在TCO材料30與窗材料50之間提供一良好能帶排列。
或者，可藉由控制次氧化物之缺氧性而達成緩衝材料40之一期望導電率。例如，如下文更詳細描述，可藉由在一反應性濺鍍程序期間改變氧氣/氬氣之比率而改變缺氧量。
圖3A及圖3B描繪圖1基板結構100的形成。如圖3A中所展示，提供一基板10。在該基板10上形成障壁材料20及TCO材料30。可藉由已知程序形成此等材料20、30之各者。例如，可藉由物理氣相沈積程序、化學氣相沈積程序或其他適當的程序形成障壁材料20及TCO材料30。
如圖3B中所展示，在TCO材料30上形成緩衝材料40。可藉由物理、化學沈積或任意其他沈積方法(例如，大氣壓化學氣相沈積、蒸鍍沈積、濺鍍及MOCVD、DC脈衝濺鍍、RF濺鍍或AC濺鍍)而沈積緩衝材料40。若使用一濺鍍程序，則靶可為一陶瓷靶或一金屬靶。此外，可使用一預合金化靶或藉由G靶與Zn靶之共濺鍍而進行濺鍍。
箭頭33描繪摻雜緩衝材料40之選用步驟，其可以任意適當的方式實現。
在一實施例中，將摻雜劑以所期望之濃度引入濺鍍靶中。可藉由鑄造、燒結或各種熱噴塗方法製備一濺鍍靶。在一實施例中，藉由反應性濺鍍程序，由包括摻雜劑的一預合金靶形成緩衝材料40。在一實施例中，濺鍍靶之摻雜劑濃度為約每立方厘米1×1017 個原子至約每立方厘米1×1018 個原子。在一實施例中，使用Cd-Zn或Sn-Zn之一靶及包括摻雜劑之一靶藉由一濺鍍程序而形成緩衝材料40，並且在濺鍍程序期間，此等靶可彼此相鄰放置。
另外，可藉由控制緩衝材料40之熱處理而改變緩衝材料40之導電率。在沈積時，緩衝材料40係非晶材料。藉由熱處理，例如熱退火，緩衝材料40可(全部或部分)轉換成結晶態，結晶態相對於非晶態更能導電。另外，可藉由熱處理例如熱退火而改變活性摻雜劑位準(並且藉此改變導電率)。在此情況下，可操縱熱負載(即，暴露至一溫度的時間及該溫度)及周圍條件兩者以影響緩衝材料40中之摻雜位準。例如，在一退火程序期間，弱還原或耗氧環境可導致較高摻雜位準且相應地因此導致增強之導電率。此外，一熱處理程序可為在沈積緩衝材料40之後(且在形成緩衝材料40上之任意其他材料之前)的一分離退火程序或可為使用於沈積窗材料50及/或半導體材料60中之處理。熱處理可在約300℃至約800℃的溫度下進行。
或者，可藉由控制次氧化物之缺氧性而達成緩衝材料40之一期望導電率。例如，可藉由在反應性濺鍍程序期間引入氣體及改變氧氣對其他氣體的比率(例如氧氣/氬氣比率)而在緩衝材料40之形成期間改變缺氧量。一般而言，對於金屬氧化物，若其缺氧，則金屬之額外電子可參加導電，從而增加材料的導電率。因此，可藉由控制沈積室氣體為缺氧(即，藉由在缺氧環境中形成緩衝材料40)而增加緩衝材料40之導電率。例如，供應成形氣體(forming gas)將減少可用的氧氣。
圖4A描繪包含裝置200之一太陽能模組400，該裝置200可為太陽能電池。太陽能電池200之各者經由引線401電連接至匯流排402、403。匯流排402、403可電連接至引線404、405，該等引線404、405可使用於電連接複數個模組400以形成一陣列440，如圖4B中所展示。
儘管已詳細地描述所揭示之實施例，然而應容易地瞭解本發明不限於所揭示之實施例。實情係所揭示之實施例可經修改以併入迄今未描述的任意數目之變化、變更、替代或等效配置。
10．．．基板/材料/玻璃
20．．．障壁材料
30．．．透明導電氧化物/TCO材料
33．．．描繪摻雜緩衝材料40之選用步驟的箭頭
40．．．緩衝材料
50．．．窗材料
60．．．半導體材料
70．．．第二接觸件/材料
100．．．基板結構
200．．．裝置/太陽能電池
400．．．太陽能模組
401．．．引線
402．．．匯流排
403．．．匯流排
404．．．引線
405．．．引線
440．．．陣列
圖1描繪根據一實施例之一基板結構。
圖2描繪根據一實施例之一裝置。
圖3A及圖3B描繪圖1之基板結構的形成。
圖4A描繪包含圖2之裝置的一太陽能模組。
圖4B描繪包含圖4A之模組的一太陽能陣列。
10‧‧‧基板/材料/玻璃
20‧‧‧障壁材料
30‧‧‧透明導電氧化物/TCO材料
40‧‧‧緩衝材料
100‧‧‧基板結構

Claims (33)

  1. 一種使用於一光伏打裝置(photovoltaic device)中之結構，該結構包括：一基板；一緩衝材料，其中該緩衝材料包括CdZnO；一障壁材料，其與該基板接觸；及一透明導電氧化物，其在該緩衝材料與該障壁材料之間。
  2. 如請求項1之結構，其中緩衝材料進一步包括一摻雜劑。
  3. 如請求項2之結構，其中該摻雜劑包括一p型摻雜劑。
  4. 如請求項3之結構，其中該摻雜劑係選自由下列組成之群組：Li、Na、K、N、P、As、Sb及Bi。
  5. 如請求項2之結構，其中該摻雜劑包括一n型摻雜劑。
  6. 如請求項5之結構，其中該摻雜劑係選自由下列組成之群組：B、Al、Ga、In、T、F、Cl、Br、I及At。
  7. 如請求項2之結構，其中該摻雜劑之濃度係從約每立方厘米1×1014 個原子至約每立方厘米1×1020 個原子。
  8. 如請求項1之結構，其中該緩衝材料具有從約0.1奈米至約1000奈米的一厚度。
  9. 如請求項1之結構，其中該緩衝材料具有從約0.1奈米至約300奈米的一厚度。
  10. 如請求項1之結構，其中該緩衝材料進一步包括至少另一透明材料。
  11. 如請求項1之結構，其中該緩衝材料進一步包括SnOx 。
  12. 如請求項1之結構，其中該緩衝材料包括CdZnO且其中Cd對Zn之原子比率係從約1：100至約100：1。
  13. 如請求項1之結構，其中該緩衝材料包括SnZnO且其中Sn對Zn之原子比率係從約1：100至約100：1。
  14. 如請求項1之結構，其中該基板係一玻璃，其係選自由下列組成之群組：鈉鈣玻璃、低鐵玻璃及太陽能浮式玻璃。
  15. 一種光伏打裝置，其包括：一基板；一半導體材料；一障壁材料，其在該基板與該半導體材料之間；一透明導電氧化物，其在該障壁材料與該半導體材料之間；一緩衝材料，其在該透明導電氧化物與該半導體材料之間，其中該緩衝材料包括CdZnO；及一窗材料，其在該緩衝材料與該半導體材料之間。
  16. 如請求項15之裝置，其中緩衝材料進一步包括一摻雜劑。
  17. 如請求項16之裝置，其中該摻雜劑之濃度係從約每立方厘米1×1014 個原子至約每立方厘米1×1020 個原子。
  18. 如請求項15之裝置，其中該緩衝材料具有從約0.1奈米至約1000奈米的一厚度。
  19. 如請求項15之裝置，其中該緩衝材料進一步包括至少另 一透明材料。
  20. 如請求項15之裝置，其中該緩衝材料包括CdZnO且其中Cd對Zn之原子比率係從約1：100至約100：1。
  21. 如請求項15之裝置，其中該緩衝材料包括SnZnO且其中Sn對Zn之原子比率係從約1：100至約100：1。
  22. 如請求項15之裝置，其進一步包括與該半導體材料相鄰之一接觸件。
  23. 如請求項15之裝置，其中該半導體材料係選自由下列組成之群組：CdTe、CIGS及非晶矽。
  24. 如請求項15之裝置，其中該基板包括一玻璃，該障壁材料包括SiAlOx ，該TCO材料包括鎘錫酸鹽(cadmium stannate)，該窗材料包括CdS，且該半導體材料包括CdTe。
  25. 如請求項15之裝置，其中該基板包括一玻璃，該障壁材料包括SnOx 及SiAlOx ，該TCO材料包括摻雜氟之SnO2 ，該窗材料包括CdS，且該半導體材料包括CdTe。
  26. 如請求項15之裝置，其中該緩衝材料之一部分與該半導體材料之一部分直接接觸。
  27. 一種製作一光伏打結構的方法，該方法包括：提供一基板；在該基板之一第一側上形成一障壁材料；在該基板之該第一側上形成一透明導電氧化物；及在該基板之該第一側上形成一緩衝材料，其中該緩衝材料包括CdZnO；且其中該障壁材料係在該透明導電氧 化物與該基板之間；且該透明導電氧化物係在該緩衝材料與該障壁材料之間。
  28. 如請求項27之方法，其進一步包括用一摻雜劑摻雜該障壁材料。
  29. 如請求項28之方法，其中藉由一濺鍍程序形成該緩衝材料，且其中摻雜該緩衝材料包括使用具有濃度為約每立方厘米1×1017 個原子至約每立方厘米1×1018 個原子之該摻雜劑的一靶(target)。
  30. 如請求項27之方法，其中藉由大氣物理氣相沈積形成該障壁材料、該透明導電氧化物及該緩衝材料之至少一者。
  31. 如請求項27之方法，其進一步包括使該障壁材料經受一熱退火程序。
  32. 如請求項27之方法，其中形成該緩衝材料包括在一缺氧環境中形成該緩衝材料。
  33. 如請求項27之方法，其中該緩衝材料係以非晶態形成，且該方法進一步包括處理該緩衝材料以將該緩衝材料之至少一部分改變成結晶態。
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Publication number Priority date Publication date Assignee Title
WO2011084775A1 (en) * 2009-12-21 2011-07-14 First Solar, Inc. Photovoltaic device with buffer layer
CN102610724B (zh) * 2012-04-01 2014-12-17 浙江大学 一种基于CdZnO薄膜的电致发光器件及制备方法
WO2014155444A1 (ja) * 2013-03-26 2014-10-02 キヤノンアネルバ株式会社 太陽電池の製造方法、および太陽電池
US20150140321A1 (en) * 2013-11-15 2015-05-21 Alliance For Sustainable Energy, Llc Methodology for improved adhesion for deposited fluorinated transparent conducting oxide films on a substrate
US9520530B2 (en) * 2014-10-03 2016-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Solar cell having doped buffer layer and method of fabricating the solar cell
TWI550887B (zh) * 2014-11-04 2016-09-21 呂宗昕 太陽能電池之緩衝層、用以製備緩衝層的前驅物溶液及製造緩衝層的方法
CN106299036B (zh) * 2016-11-23 2017-11-21 绍兴文理学院 一种用于太阳能电池的SnZnO缓冲层
CN112331729A (zh) * 2020-11-04 2021-02-05 凯盛光伏材料有限公司 Cigs薄膜太阳能电池的光吸收层及其形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
EP2201605A4 (en) * 2007-09-25 2017-12-06 First Solar, Inc Photovoltaic devices including an interfacial layer
FR2932009B1 (fr) * 2008-06-02 2010-09-17 Saint Gobain Cellule photovoltaique et substrat de cellule photovoltaique
JP2012531051A (ja) * 2009-06-22 2012-12-06 ファースト ソーラー インコーポレイテッド 堆積錫酸カドミウム層のアニール方法および装置
MA33504B1 (fr) * 2009-07-10 2012-08-01 First Solar Inc Dispositifs photovoltaiques incluant du zinc
CN102482796A (zh) * 2009-08-24 2012-05-30 第一太阳能有限公司 掺杂的透明导电氧化物
WO2011075579A1 (en) * 2009-12-18 2011-06-23 First Solar, Inc. Photovoltaic device including doped layer
WO2011084775A1 (en) * 2009-12-21 2011-07-14 First Solar, Inc. Photovoltaic device with buffer layer
US20120060923A1 (en) * 2010-03-31 2012-03-15 Zhibo Zhao Photovoltaic device barrier layer
CN102893408B (zh) * 2010-05-13 2016-05-11 第一太阳能有限公司 光伏器件导电层
CN102959120B9 (zh) * 2010-06-30 2018-08-21 第一太阳能有限公司 锡酸镉溅射靶
CN103210498A (zh) * 2010-08-13 2013-07-17 第一太阳能有限公司 光伏装置
US20120042927A1 (en) * 2010-08-20 2012-02-23 Chungho Lee Photovoltaic device front contact

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