TWI226680B - Chip scale package of an image sensor - Google Patents
Chip scale package of an image sensor Download PDFInfo
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- TWI226680B TWI226680B TW92126116A TW92126116A TWI226680B TW I226680 B TWI226680 B TW I226680B TW 92126116 A TW92126116 A TW 92126116A TW 92126116 A TW92126116 A TW 92126116A TW I226680 B TWI226680 B TW I226680B
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1226680 五、發明說明(1) 【發明所屬之技術領域】 月:有關於—種影像感測器’特別係有關於一種 日日片尺寸封裝之影像感測器。 【先前技術】 曰ϋ習=ί影像感測器〔Image Sensor〕係將一影像感測 曰曰片,例如互補金屬氧化半導体〔complementaq Metai1226680 V. Description of the invention (1) [Technical field to which the invention belongs] Month: There is a type of image sensor ', in particular, a type of image sensor packaged in a Japanese-Japanese film size. [Prior art] Image Sensor [Image Sensor] is an image sensor, such as complementary metal oxide semiconductor [complementaq Metai
Oxide Seunconductor,CMOS〕,裝設於_具凹槽之陶瓷 基板或一具有預形成模〔pre-m〇ld〕之導線架或硬質印刷 電路板内’再以-透明蓋密肖,而在密封影像感測晶片之 空間内通常係為真空或填充有惰性氣體,以防止水 粒侵入。 請參閲第一圖,一種習知之影像感測封裝結構Η其包 含有一基板1 1、一凸緣層1 2、一影像感測晶片丨3及一透光 層1 4 ’該影像感測晶片1 3係設於該凸緣層丨2與該基板丨丨所 形成之凹槽中,並利用複數個銲線1 5電性連接至該基板 11,該透光詹14係貼設於該凸緣層12上以密封該=像感測 晶片1 3,然而,當該影像感測晶片1 3與該凸緣層i 2與該基 板11所形成之凹槽尺寸接近時,該些銲線15無法直接^了線 連接至該基板11,無法達到晶片尺寸封襞。 曰曰 表面形成有訊號輸入端,以供複數個導線電性連接該 另一種習知之影像感測器構造,如我國專利公告第 5 4 2 4 9 3號「影像感測器構造」所揭示者,其包含有一基 板、一凸緣層、一影像感測晶片及一透光層,^影像感測 片係設於該凸緣層與該基板所形成之凹槽中,該凸緣 之上 1226680 五、發明說明(2) 些訊號輪入端 電性連接至該 層,以黏著該 之側邊電性連 護層保護,容 此外,我 種影像感測器 測晶片覆晶接 有说號輸入端 與訊號輸出端 端電性導接之 孔之印刷電路 經過透光層方 有透光與雙面 作形成雙面電 【發明内容】 本發明之 像感測器,利 件,該導體層 樓層,並分別 之複數個導接 寸封裴之功效 度〇 與該影像感 基板,該凸 透光層,由 接至該基板 易造成可靠 國專利公告 之封裝構造 合至一透光 與訊號輸出 ,在該影像 後,將該透 板,故電性 傳遞至印刷 電性傳導之 性傳導之線 測晶片,再經由該凸緣層之側邊 緣層之上表面塗佈有部分之黏著 於$亥影像感測晶片係以該凸緣層 ,但該凸緣層之侧邊並無其他保 度不良。 第45 9 3 55號發明專利係揭示有一 及其封裝方法,其係將一影像感 層’該透光層係於不同表面形成 端並以導線相互連接訊號輸入端 感測晶片與該透光層之訊號輸入 光層之訊號輸出端接合至一具開 傳遞路徑係為由該影像感測晶片 電路板,該透光層係必須要具備 功能,要在玻璃質之透光層上製 路係為困難而高成本。 主要目的係在於提供一種晶片尺寸封裝之影 用至少一具有一支撐層與一導體層之導接元 第、與第一端係延伸出該導接元件之支 與一影像感測晶片之複數個銲墊以及一基板參 塾電彳生連接’以達到上下電性導通與晶片尺 ’且以該支撐層保護該導體層,提昇可靠 依本發明a U d , 曰曰片尺寸封裝之影像感測器,其係包含有Oxide Seunconductor, CMOS], installed in a ceramic substrate with a groove or a lead frame or a pre-molded printed circuit board with a pre-mold [pre-mold]. The space of the image sensing chip is usually vacuum or filled with an inert gas to prevent water particles from entering. Please refer to the first figure, a conventional image sensing package structure, which includes a substrate 11, a flange layer 1 2, an image sensing chip 丨 3 and a light transmitting layer 1 4 ′ The image sensing chip 1 3 is arranged in the groove formed by the flange layer 丨 2 and the substrate 丨 丨, and is electrically connected to the substrate 11 by using a plurality of bonding wires 15, and the light transmissive 14 is attached to the protrusion The edge layer 12 is sealed to the image sensing wafer 1 3, however, when the image sensing wafer 13 is close to the groove formed by the flange layer i 2 and the substrate 11, the bonding wires 15 It is not possible to directly connect a wire to the substrate 11, and it is impossible to achieve a wafer size seal. A signal input terminal is formed on the surface for a plurality of wires to be electrically connected to another conventional image sensor structure, as disclosed in China Patent Bulletin No. 5 4 2 4 9 3 "Image Sensor Structure" It includes a substrate, a flange layer, an image sensing chip, and a light transmitting layer. The image sensing sheet is disposed in a groove formed by the flange layer and the substrate, and the flange is 1226680. V. Description of the invention (2) The input end of some signal wheels are electrically connected to this layer, and the side is protected by an electrical connection layer. In addition, our type of image sensor has a signal input on the chip of the chip. The printed circuit with the hole electrically connected to the signal output terminal passes through the light-transmitting layer, and the light-transmitting layer and the double-sided layer are formed to form a double-sided electrical device. [Summary of the Invention] The image sensor of the present invention, a sharp piece, and the conductor layer floor And the effectiveness of the plurality of lead-in seals and the image-sensing substrate and the convex light-transmitting layer are connected to the substrate, which is likely to cause the package structure of the reliable national patent announcement to be combined into a light-transmitting and signal output, After the image, the transparent plate is used, so The electrical transmission is performed on a conductive line test chip printed with electrical conduction, and then a portion of the adhesive layer coated on the upper surface of the side edge layer of the flange layer is adhered to the image sensor wafer using the flange layer, but There are no other poor retentions on the sides of the flange layer. The invention patent No. 45 9 3 55 discloses a method and a packaging method thereof. An image sensing layer is formed on different surfaces and the light transmitting layer is connected to a signal input terminal to sense a chip and the light transmitting layer. The signal output end of the signal input light layer is connected to an open transmission path by the image sensor chip circuit board. The light transmission layer must have functions, and it is difficult to make the road system on the glass light transmission layer. And high cost. The main purpose is to provide a wafer-size package for at least one contact element with a support layer and a conductor layer, and a first end extending from the branch of the contact element and an image sensing chip. The solder pad and a substrate are electrically connected to the substrate to achieve electrical connection between the upper and lower sides and the wafer ruler, and the conductor layer is protected by the support layer, which improves the reliability of the image sensing according to the present invention a Ud, a chip size package. Device, which includes
第7頁 1226680Page 7 1226680
五、發明說明(3) 影像感測晶I -基板、至少—導接元件及__透光片, 該影像感測晶片係具有-感測面及一背面,該感測面之周 邊係形成有複數個銲墊,該基板係具有一第一表面及一第 二表面’該基板之該第一表面係與該影像感測晶片之該背 面貼合,該基板之該第二表面係形成有複數 數個外接墊,該些外接墊係與該些導接墊電性連接,該導 接π件係為薄膜基板,其厚度係不大於〇 2mm,該導接元 件係具有一支撐層及一導體層,該導體層係具有一第一端 與:ίίί思該導體層之第一端與第二端係延伸出該導接 :件,支撐層,而該導體層之該第一端係與該影像感測晶 2 ί ί鲜墊電性連接,該導體層之該第二端係與該基板 之導接墊電性連接,以達到上下電性導通與晶片尺寸封裝 ^ f效/該透光片係對應於該影像感測晶片之該感測面而 夕C ΐ 1導接兀件之第一端,較佳地’於該影像感測晶片 =f測面之周邊另設有一密封膠,α密封該感測面防 ^氣或塵粒侵入’且該些外接墊係植接有複數個銲球, 用=作為該晶片尺寸封裝之影像感測器之外 。 【實施方式】 參閱所附圖式,本發明將列舉以下之實施例說明。 依本發明之第一具體實施例,請參閱第2圖,一種晶 尺寸封裴之影像感測器丨〇 〇係主要包含有一影像感測晶 片110、一基板120、至少—導接元件13〇及一透光片14(), f影像感測晶片11 0係為-電荷耦合器们Charged ouple Devi ce,CCD〕或為一互補金屬氧化半導體V. Description of the invention (3) Image sensing crystal I-substrate, at least-conductive element and __ translucent sheet, the image sensing chip has-sensing surface and a back surface, and the periphery of the sensing surface is formed There are a plurality of bonding pads. The substrate has a first surface and a second surface. The first surface of the substrate is bonded to the back surface of the image sensing wafer, and the second surface of the substrate is formed with A plurality of external pads, the external pads are electrically connected to the conductive pads, the conductive π member is a thin film substrate, and the thickness is not more than 0 mm, the conductive element has a support layer and a The conductor layer has a first end and: The first end and the second end of the conductor layer extend out of the connection: a piece, a support layer, and the first end of the conductor layer is connected with The image sensing crystal 2 is electrically connected to the fresh pad, and the second end of the conductor layer is electrically connected to the conductive pad of the substrate, so as to achieve electrical conduction up and down and chip size packaging. The light sheet corresponds to the first end of the C ΐ 1 lead element corresponding to the sensing surface of the image sensing chip, Preferably, 'an additional sealant is provided around the image sensing chip = f measuring surface, α seals the sensing surface from gas or dust particles' and the external pads are implanted with a plurality of solder balls Use = as an image sensor outside the chip size package. [Embodiment] With reference to the drawings, the present invention will be described by the following embodiments. According to a first specific embodiment of the present invention, please refer to FIG. 2, a crystal-size image sensor is mainly composed of an image-sensing chip 110, a substrate 120, and at least-a conductive element 13. And a light-transmitting sheet 14 (), f image sensing chip 110 is-charge coupled couple Charged Devil CCD] or a complementary metal oxide semiconductor
HI 1226680 五、發明說明(4) 〔Complementary Metal Oxide Semiconductor , CMOS〕,該影像感測晶片11 0係具有一感測面11 1及一背面HI 1226680 V. Description of the Invention (4) [Complementary Metal Oxide Semiconductor, CMOS], the image sensing chip 110 has a sensing surface 11 1 and a back surface
11 2,該感測面1 11之周邊係形成有複數個銲墊1 1 3,該些 銲墊11 3上係形成有複數個凸塊1 1 4,該些凸塊1 1 4係可為 錫鉛凸塊或金凸塊,該基板1 2 0之尺寸係與該影像感測晶 片110之尺寸相同,並具有一第一表面121及一第二表面 1 22 ’該基板1 20係選自於虛晶片〔Dummy Chip〕與陶竟基 板之其中之一,以避免該基板120與該影像感測晶片丨1 〇之 熱膨脹係數差異過大,影響可靠度,該基板1 2 〇之該第一 表面1 2 1係以一黏膠層1 5 0與該影像感測晶片11 〇之該背面 112貼合,該基板1 20之該第二表面1 22係形成有複數個導 接墊123及複數個外接墊124,該些外接墊124並以複數個 線路125與該些導接墊123電性連接,該些導接墊丨23上係 形成有複數個凸塊126,該導接元件130係為薄膜基板,其 厚度係不大於0· 2mm,該導接元件係具有一支樓層丨31及二 導體層132,該支撐層131之材質係為聚亞醯胺 〔Polyimide ,ΡΙ〕,該導體層132之材質係為銅箔,並具 有一第一端133與一第二端134,該導體層132之第一端][μ 與第二端134係延伸出該導接元件13〇之支撐層丨31,而該 導體層132之該第一端133係與該影像感測晶片11〇之凸= 114結合,而與該影像感測晶片! 1〇之該些銲墊113電性 接,該導體層132之該第二端134係與該基板12〇之凸塊126 結合,而與該基板120之導接墊丨23電性連接,以達到 電性導通與晶片尺寸封裝之功效,請再參閱第3圓,當該11 2. A plurality of pads 1 1 3 are formed around the sensing surface 1 11. A plurality of bumps 1 1 4 are formed on the pads 11 3. The bumps 1 1 4 may be A tin-lead bump or a gold bump, the size of the substrate 120 is the same as the size of the image sensing chip 110, and has a first surface 121 and a second surface 1 22 'The substrate 1 20 is selected from In one of the dummy chip and the ceramic substrate, in order to avoid a large difference in thermal expansion coefficient between the substrate 120 and the image sensing chip, the reliability of the first surface of the substrate 1 2 0 is affected. 1 2 1 is attached with an adhesive layer 1 50 to the back surface 112 of the image sensing chip 11 0, and the second surface 1 22 of the substrate 1 20 is formed with a plurality of lead pads 123 and a plurality of The external pads 124 are electrically connected to the conductive pads 123 by a plurality of lines 125. The conductive pads 23 are formed with a plurality of bumps 126. The conductive elements 130 are The thickness of the thin-film substrate is no more than 0 · 2mm. The conductive element has one floor, 31 and two conductor layers, and the material of the support layer is 131. Polyimide (PI), the material of the conductor layer 132 is copper foil, and has a first end 133 and a second end 134, the first end of the conductor layer 132] [μ and the second The end 134 extends from the support layer 31 of the conductive element 13o, and the first end 133 of the conductive layer 132 is combined with the convexity 114 of the image sensing chip 11 and is combined with the image sensing chip !! The solder pads 113 of 10 are electrically connected, and the second end 134 of the conductor layer 132 is combined with the bumps 126 of the substrate 120, and is electrically connected to the conductive pads 23 of the substrate 120 to To achieve the effect of electrical conduction and chip size packaging, please refer to circle 3 again, when the
第9頁 1226680 · 五、發明說明(5) 導接元件1 30未與該影像感測晶片丨〗〇以及該基板丨2 〇結合 之前,該導接元件130之導體層132之第一端133與第二端 134係具有極佳之延展性,可輕易撓折,故應用於該影像 感測器100時,該導體層132之第一端133與第二端134可分 別與該影像感測晶片11 〇之該些凸塊丨丨4以及該基板丨2〇之 该些凸塊1 2 6結合,該透光片丨4 〇係為一透光玻璃,並對應 於忒影像感測晶片11 〇之該感測面111而固設於該導接元件 1 30之第一端1 33 ,較佳地,於該影像感測晶片j丨〇之該感 測面11 1之周邊另設有一密封膠丨6 〇,以密封該感測面 111 ’防止水氣或塵粒侵入,而該基板丨2〇之該些外接墊 124係植接有複數個銲球17〇,用以作為該影像感測器1〇〇 _ 之外部電性接點。 利用該導接元件130之導體層132之第一端133與第二 端134係延伸出該導接元件130之支撐層131,該第一端133 係與該影像感測晶片11 0之該些銲墊11 3電性連接,且該第 二端134係與該基板120之該些導接墊123電性連接,使該 影像感測晶片11 〇之訊號經由該導接元件1 3 0之導體層1 3 2 電性連接至該基板120之該些導接墊123,以達到上下電性 導通’而由於該導接元件130之厚度係不大於〇· 2mm,且該 基板1 2 0之尺寸係與該影像感測晶片11 0之尺寸相同,以達 _ 到晶片尺寸封裝之功效,此外,該導接元件1 30之支樓層 131係在該導體層1 32之外側,以保護該導體層1 32,提昇 可靠度。 本發明之保護範圍當視後附之申請專利範圍所界定者Page 1226680 · V. Description of the invention (5) The first end 133 of the conductive layer 132 of the conductive element 130 before the conductive element 1 30 is not combined with the image sensing chip 丨〗 〇 and the substrate 丨 2 〇 It has excellent ductility with the second end 134 and can be easily bent. Therefore, when applied to the image sensor 100, the first end 133 and the second end 134 of the conductive layer 132 can be separately detected from the image. The bumps 丨 4 of the wafer 11 〇 and the bumps 1 2 6 of the substrate 丨 2 are combined, and the light transmitting sheet 4 〇 is a transparent glass and corresponds to the image sensing wafer 11 The sensing surface 111 is fixed on the first end 1 33 of the conductive element 1 30. Preferably, a seal is provided on the periphery of the sensing surface 11 1 of the image sensing chip j 丨 〇 Adhesive 丨 6 〇 to seal the sensing surface 111 ′ to prevent moisture or dust particles from invading, and the external pads 124 of the substrate 丨 are implanted with a plurality of solder balls 17 〇 for the image sensor External electrical contact of the tester 100 %. The first end 133 and the second end 134 of the conductive layer 132 of the conductive element 130 are used to extend the support layer 131 of the conductive element 130. The first end 133 is connected to the image sensing chip 110. The pads 11 3 are electrically connected, and the second end 134 is electrically connected to the conductive pads 123 of the substrate 120, so that the signal of the image sensing chip 11 〇 passes through the conductor of the conductive element 1 30 The layer 1 3 2 is electrically connected to the conductive pads 123 of the substrate 120 so as to achieve electrical conduction up and down. Because the thickness of the conductive element 130 is not greater than 0.2 mm, and the size of the substrate 1 2 0 The size is the same as that of the image sensing chip 110, so as to achieve the effect of chip size packaging. In addition, the branch floor 131 of the lead element 130 is outside the conductor layer 1 32 to protect the conductor layer. 1 32, improve reliability. The scope of protection of the present invention shall be defined by the scope of the attached patent application
第10頁 1226680 五、發明說明(6) 為準,任何熟知此項技藝者,在不脫離本發明之精神和範 圍内所作之任何變化與修改,均屬於本發明之保護範圍。Page 10 1226680 5. Description of the invention (6) shall prevail. Any changes and modifications made by those skilled in the art without departing from the spirit and scope of the present invention shall fall within the protection scope of the present invention.
第11頁 1226680 圖式簡單說明 【圖 式 簡 單 說 明 ] 第1 圖 習 知 之 影 像感 測封裝結 構之截面示 意 圖 第2 圖 依 據 本創 作之 晶片尺寸 封装 .之影像 感 測 器 之 示 意 圖 y 及 第3 圖 依 據 本 創 作之 晶片尺寸 封裝 .之影像 感 測 器 j 接 元 件 未 結合 於影像感 測晶片與基 -板 之 前 之 示 意 圖 〇 元件 符 號 簡 單 說 明 10 影 像 感 測 封 裝 結構 11 基 板 12 凸緣層 13 影 像 感 測 14 透 光 層 15 銲線 100 影 像 感 測 器 110 影 像 感 測 晶 片 111 感測面 112 背 面 113 銲 墊 114 凸塊 120 基 板 121 第一表面 122 第 二 表 面 123 導 接 墊 124 外接塾 125 線 路 126 凸 塊 130 導 接 元 件 131 支撐層 132 導 體 層 133 第 一 端 134 第二端 140 透 光 片 150 黏 膠 層 160 密 封 膠 170 銲 球 «Page 11 1226680 Brief description of the drawings [Simplified description of the drawings] Fig. 1 The cross-sectional schematic diagram of the conventional image sensing package structure Fig. 2 The schematic diagram of the image sensor y and 3 according to the wafer size package created by this Schematic diagram of the image sensor j connector components not combined with the image sensor chip and the base-board based on the wafer size package created by this creation. 0 Simple explanation of component symbols 10 Image sensor package structure 11 Substrate 12 Flange layer 13 Image sensor Measure 14 Light transmission layer 15 Welding wire 100 Image sensor 110 Image sensor wafer 111 Sensing surface 112 Back side 113 Welding pad 114 Bump 120 Substrate 121 First surface 122 Second surface 123 Leading pad 124 External coil 125 Circuit 126 Bump 130 Leading element 131 Support layer 132 Conductor layer 133 First end 134 Second end 140 Light transmitting sheet 150 Adhesive layer 160 sealant 170 solder ball «
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