1289091 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種研磨基材晨^ 種利用於檢測臂上設置可進行線性運^ :控裝置。尤其是指- 行表面研躲㈣_及錄之1研磨對研磨基材進1289091 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a polishing substrate which can be used for linear operation and control devices. Especially refers to the surface of the surface (four) _ and recorded 1 grinding on the grinding substrate
【先前技術1 坦化品求之表面特性進行精確之檢測以提升製程良率，具 有相當之重要性。 ^ 隨著微小化的發展趨勢，使得微結構曰趨複雜，在元 件製造的過程中，製程之規格更是要求越來越高。當一λ 材的尺寸越來越大，以及所含括的微結構越來越多時，ς 味著所需的每一製程步驟與檢測的精準度要求增加。尤其 在表面堆疊製造過程中’如何有㈣針對基材^度以及^ 由於未經研磨之基材表面係為非一致性的高度，因此 當該基材在進行研磨的時候，需要藉由偵測裝置來偵測研 磨過程中或者是研磨結果之狀態（如高度或者是平坦度）， 而在習用技藝中，用以偵測研磨基材厚度之偵測機構，一 般是利用終點偵測器（End Point Detector, EPD)來债測研 磨後之狀態。其主要原理係以入射光源進入到研磨基材之 表面上，在藉由光接收器接收由研磨基材反射之光源，藉 此以彳貞測研磨基材之厚度。 請參閱圖一所示，該圖係為習用應用於化學機械拋光 之端點偵測裝置示意圖。晶圓基材11係被一晶圓夾具15 6 ,1289091 - 上的固定元件13所夾持著，晶圓基材11之研磨面則朝向 • 固定於一旋轉台16上之研磨墊12，該研磨墊12與該旋轉 • 台16上開設有相連通之窗口（圖中未示）。一光偵測裝置 Π可發射出偵測光通過該窗口而以一入射角射向該晶圓基 材11之研磨面，以及揍收從該晶圓基材11之研磨面反射 之光訊號。透過電腦運算裝置以偵測該晶圓基材11之研磨 狀態。 除了上述之外，其他如U.s· Pat· No· 6517413所揭露之 _ 裝置係利用偵測由研磨基材上反射之雷射光，再透過電腦 對偵測之反射雷射光進行訊號處理以分析研磨基材上之剩 餘氧化銅之量進而監控完成研磨所需要之時間，而掌握研 磨基材之研磨精度。又如U.S.Pat.No.6336841其係為 肘10_1又所提出之以紅外線（111汁31^(1，1尺）端點偵測方 法’藉由研磨後研磨基材對於紅外線吸收頻譜的改變，判 斷研磨基材之厚度。此外U. S· Pat· No· 6586337則揭露一種 設置於研磨基材下方以及具有發射以及接收光源功能之一 才木/ 則頭利用刖述之原理偵測訊號以判斷研磨基材之厚度。 雖然前述終點偵測器可以偵測研磨基材之厚度，不過 具有下列缺點·· ‘ （1)必須要之檢測厚度需要大於3000埃，否則所獲得 .之反射頻譜訊噪比不足。 (2)終點偵測器係被固定於一位置上，因此對於大尺寸 之基材區域之量測有限，僅能做局部性之偵測，無 法真正呈現出研磨基材之厚度變化。所以無法獲得 較佳之精確度。 7 1289091 (3)如圖二a至圖二c所示，該圖係為金屬堆疊示音 圖。首先在基板20上形成金屬層21，在沉積的^ 程中，金屬層21之上表面，並不均勻。接下來沉 積介電層22於該金屬層21上，如圖所示，在 沉積的過程中，沉積表面之平整度並不理想，為了 下一階段製程能夠順利進行，需藉由研磨^程將圖 ,Β之結構研磨成平整的狀態，以形成如圖二c所 不之結構。然而在研磨的過程中，若藉由前述之終 點偵測器來偵測研磨基材之平整度以及厚度，僅能 夠偵測研磨基材之局部區域，若將其所偵測之鈇果 當作全面性的研磨厚度檢測結果，將造成過度= j者是偵測不足，進而導致研磨基材表面厚度不均 '~之現象。 另外，在現今研磨中，由於研磨與拋光製都 研磨總體厚度（Total Thickness Variati〇n 得。由於此方法是以基礎面當作其參考平面 容= 研磨基材之平坦度與置放之位置而產生因參考== =差。如圖三中，即為研磨基材8G置放於傾斜之= 就會據參考平*82監控研磨厚度以及平整度時:[Prior Art 1 It is of considerable importance to perform accurate inspection of surface properties to improve process yield. ^ With the development trend of miniaturization, the microstructure is becoming more and more complicated. In the process of component manufacturing, the specifications of the process are more and more demanding. As the size of a λ material becomes larger and larger, and the number of microstructures involved increases, the requirements for each process step and inspection accuracy required for odor are increased. Especially in the surface stack manufacturing process, 'how to (4) for the substrate ^ and ^ because the surface of the unground substrate is non-uniform, so when the substrate is being ground, it needs to be detected The device detects the state of the grinding process or the state of the grinding result (such as height or flatness). In the conventional technique, the detecting mechanism for detecting the thickness of the grinding substrate generally uses an end point detector (End). Point Detector, EPD) is used to measure the state after grinding. The main principle is to enter the surface of the abrasive substrate with the incident light source, and receive the light source reflected by the abrasive substrate by the light receiver, thereby measuring the thickness of the abrasive substrate. Referring to Figure 1, the figure is a schematic diagram of an endpoint detection device for chemical mechanical polishing. The wafer substrate 11 is held by a fixing member 13 on a wafer holder 15 6 , 1289091 -, and the polishing surface of the wafer substrate 11 faces the polishing pad 12 fixed to a rotating table 16 . The polishing pad 12 is open to the rotating table 16 (not shown). A photodetecting device 发射 emits the detected light through the window to be incident on the polishing surface of the wafer substrate 11 at an incident angle, and absorbs the optical signal reflected from the polishing surface of the wafer substrate 11. The grinding state of the wafer substrate 11 is detected by a computer arithmetic device. In addition to the above, other devices such as those disclosed in US Pat. No. 6517413 detect the polishing base by detecting the laser light reflected from the abrasive substrate and then detecting the reflected laser light through the computer. The amount of residual copper oxide on the material is then monitored for the time required to complete the polishing, and the grinding accuracy of the abrasive substrate is mastered. Another example is USPat.No.6336841 which is an infrared ray (111 juice 31^(1,1 ft) end point detection method) which is a method for detecting the infrared absorption spectrum of a substrate after grinding by grinding. Judging the thickness of the ground substrate. U.S. Pat. No. 6,586,337 discloses a method for detecting the signal under the polishing substrate and having the function of transmitting and receiving light sources. The thickness of the substrate is ground. Although the above-mentioned endpoint detector can detect the thickness of the ground substrate, it has the following disadvantages: · (1) It is necessary to detect the thickness more than 3000 angstroms, otherwise the obtained reflection spectrum noise (2) The end point detector is fixed at a position, so the measurement of the large-sized substrate area is limited, and only the local detection can be performed, and the thickness variation of the abrasive substrate cannot be truly exhibited. Therefore, the accuracy is not obtained. 7 1289091 (3) As shown in Fig. 2a to Fig. 2c, the figure is a metal stacked sound diagram. First, a metal layer 21 is formed on the substrate 20, in the process of deposition. Medium, above metal layer 21 The surface is not uniform. Next, the dielectric layer 22 is deposited on the metal layer 21. As shown in the figure, during the deposition process, the flatness of the deposition surface is not ideal, and the next stage process can be smoothly carried out. The structure of the crucible is ground into a flat state by a grinding process to form a structure as shown in Fig. 2c. However, in the grinding process, the grinding substrate is detected by the above-mentioned end point detector. The flatness and thickness can only detect the local area of the abrasive substrate. If the detected result is regarded as a comprehensive grinding thickness detection result, it will cause excessive = j is insufficient detection, which leads to grinding. In addition, in today's grinding, the overall thickness is ground due to grinding and polishing (Total Thickness Variati〇n. Since this method uses the base surface as its reference plane capacity = grinding The flatness of the substrate and the position of the substrate are caused by the reference == =. As shown in Fig. 3, the ground substrate 8G is placed at the inclination = the polishing thickness and the flatness are monitored according to the reference level *82. :
f發明内容J 本發明的主要目的是提供一種研磨監控裝置，其係以可進行 8 1289091 Ϊ性之至少—㈣部來制研縣材之厚度以及平括 :以感泰阿由光學式或者是㈣流式_元件所構成到 夕=研縣材進行全面性厚度檢_及獨㈣厚度差異檢測 之目的 為了達到上述之目的，本發明提供一種研磨監控裝置，1 用以檢測-研磨基材之表面研磨狀態，該研磨監控裝置包括二 檢測臂’其係與該研磨基材相距—高度；以及至少-感測部，其 係β又置於该檢測臂上且與該研磨基材之研磨面相對應，該至少一 感測部可㈣行-線齡移運細及細該研材在研磨 中之厚度變化。 較佳的是，該研磨監控裝置更包括有一誘導器，該誘導器可 以產生磁場於該研磨基材上以誘發該研磨基材產生渦電流。 較佳的是，該感測部更包括有一渦電流檢測器，以偵測該研 磨基材所產生之磁場強度。 較佳的疋，該感測部更包括有一光源產生器，該光源產生器 可發出一偵測光至該研磨基材上。 ^ 較佳的是，該研磨監控裝置更包括有至少一光學偵測器，該 光學偵測器係可接收由該研磨基材反射之偵測光。該至少一光學 偵測器係設置於至少一線性滑軌上，藉由該線性滑執提供之線性 位移運動以接收複數個由該研磨基材反射之該偵測光。 較佳的是’該研磨監控裝置更包括有與該感測部作電訊連接 之一電§fL整合早元’該電整合卓元係可整合該感測部之訊號以 輸出一感測訊號。該電訊整合單元更耦接有一控制單元，該控制 單元係可接收該感測訊號，以判斷該研磨基材之研磨狀態。 1289091 【實施方式】 為使胃審查委員能對本發明之特徵、目的及功能有更進一 •步的4知與瞭解’下文特將本發明之裝置的_細部結構以及設 β的’以使得審查委員可以了解本發明之特 點’詳細說明陳述如下： 輕閱圖四所示’該圖係為本發明之第一較佳實施例示意 鴦圖。本發明之研磨監控裝置3係包括有一檢測臂 30以及一感測部 1 >該檢’貞丨# 30 ’其係與該研磨基材相距_高度。該感測部31， 其係設置於該檢測臂30上且與該研磨基材之研麵相對應 ，該感 測部31可以感測該研磨基材在研磨過程中之厚度變化以及進行一 =生位移運動91。該感測部31 &括有一光學感測部311以及渦電 々il感測部312 ’但不在此限。由於本發明之目的係要能夠掌握在研 ，過知巾研磨基材之全區域研磨狀況，如··研磨基材之厚度或者 疋平整度的掌握，因此本發明之重要特徵之-即是該制部31可 • 以進行位移運動91 ’以掌握監控研磨基材全部區域之研磨狀態。 該，測部31之感測元件之組合，係依檢測之需求而定，所以 也可=單只有光學感測部311或者是單只有渦電流感測部，亦 或者是像本案之第—較佳實施财之光學感卿以及渦電流感測 部兩者結合，但不在此限。例如··如果研磨基材之材料含有金屬 材料為了 4加檢測之精度，就可以將光學感測部311以及涡電 流感測部312進行結合-起使用，而形成如本發明第一較佳實施 例的狀悲。換句話說，只要是為了針對制研磨狀態之感測器， 都可在本發明之保護範圍内。 該線性位移運動9卜在本實施例中可以藉由線性移動機構， 1289091 ，如線性導執32等元件來提供。該線性導軌32係設置於該檢測臂 - 30上，而該感測部31則設置在該線性導軌32上。使該感測部31 、 可以視偵測之需要，而在該線性導軌32上進行該線性位移運動 91，而偵測研磨基材之研磨狀態。 請參閱圖五所示，該圖係為本發明之第二較佳實施例示意 圖。在本實施例中，該研磨監控裝置β之檢測臂6〇上，設置有複 數個感測部61，每一個感測部61以一間隔分佈於該檢測臂6〇上。 該感測部61可藉由設置於該檢測臂6〇上之線性導軌64而進行線 β 性位移運動91。本較佳實施例可應用於大面積之研磨基材來擴大 檢測之範圍，以避免感測部移動行程過大而造成檢測精度降低。 接下來說明本發明之量測方式以及原理。請參閱圖六所示， 該圖係為本發明之研磨監控裝置與研磨裝置結合示意圖。該研磨 裝置7係可為一機械研磨裝置，但不在此限。該研磨裝置7包括 有一旋轉台71、一研磨墊72、一夾具74以及一固定元件73。該 旋轉台71以及該夾具74係可進行一旋轉運動92。該研磨墊72 設置於該旋轉台71上，該固定元件73設置於該夾具74上，以提 供固定被夾持在該夾具74上之研磨基材5。該研磨基材5之研磨 面係與該研磨墊72相對應。 在該旋轉台71之内，開設有一容置空間711，以提供容置一 磨It控裝置，如前述之第—較佳實施例或者是第三較佳實施例 等。在圖六之說明中，該研磨監控裝置6係利用本發明之第二較 =實施例來作·。職研磨監控裝置6之相關電訊信號線材則 ，由该，轉台]之轉軸與_電訊整合單元62作電訊連接。該電 ^整合單元62係可整合該研磨監控裝置6所使狀減線材之訊 〜以輪出一感測訊號。而該電訊整合單元62更耦接有一控制單元 1289091 63，該控制單元63係可接收該感測訊號，以判斷該研磨基材5之 研磨狀態。至於被夾持在夾具74之研磨基材5，則為要進行多層 .金屬材料堆疊製程之研磨基材5。 曰 請參閱圖五以及圖六所示，在檢測的過程中，渦電流感測部 612來判別欲研磨區域之磁通密度，而渦電流感測部612所進行之 偵測係屬於大範圍區域之檢測。而光學感測部611之檢測則是讀 取線性導執64在移動時所經過路徑之訊辣，判別所接收到反射光 之區域的研磨基材5厚度，並傳送至該控制單元63進行處理。由 >於該研磨監控裝置6包括有複數個感測部61，因此在進行端點偵 測與判斷中’該複數個感測部61可以於複數個位置分別擷取複數 個厚度資訊以作為基準點。然後，於研磨一段時間之後，再藉由 該複數個感測部61於複數個位置擷取資訊，經由該控制單元9肋 處理而得到每一個位置之厚度相對差異值，進而掌握研磨基材5 於研磨過程中之研磨狀態。 請參閱圖七A所示，該圖係為本發明之渦電流感測部之較佳 實施例檢測示意圖。該渦電流感測部612包括有一核心本體 6120，在核心本體6120中間區域具有一誘導器6121，在本實施例 中，該誘導器6121係為在該核心本體612〇中間區域纏繞有激發 線圈（Driver coil)。而在核心本體612〇之兩側區域分別具有一 渦電流檢測器6122 ,在本實施例中，該渦電流檢測器6122係為纏 繞於該核心本體6120兩端之拾取線圈（Pickup c〇ii)。 在渦電流之特性中，渦電流的密度隨著離導體表面之深度增 加而遞減。如下式所示： ,1 〇 =-7=^ 12 1289091 - 其中d係為透入深度(m)，f係為頻率(Hz)，σ係為導電率 (niho/in) W 為導磁率（Henry/m)。 . 此外，隨著深度的增加，渦電流的相位角也會有規律的滯後。 滯後的渦電流所產生之交變磁場，對於渦電流檢測器6122之拾取 線圈所產生之感應電流也會隨之產生相位變化。由於研磨基材5 在研磨過程中厚度的改變會影響渦電流透入之深度，因此產生前 述之現象，藉由事先建立的標準，我們可以利用該渦電流檢測器 6122所感測之具有相變化之感應電流，來判斷深度的改變，進而 _ 得知研磨基材5厚度的變化。 此外，由於該研磨基材5為多層金屬堆疊結構，所以將載有 交流電之該誘導器6121接近該研磨基材5 ,藉由該誘導器6121 所引發之父變磁場93而使該研磨基材5上之金屬導體感應產生渦 電/’il，而该渦電流也會產生與該誘導器6121產生之交變磁場相反 方向之磁場，以激發該渦流檢測器6122上之拾取線圈產生一感應 電流。當該研磨基材5之厚度改變時，該研磨基材5之電阻會改 鲁 變，因此該研磨基材5所感應之渦電流以及該渦電流所產生之交 變磁場也會隨之改變，進而使該渦電流檢測器6122檢測具有相位 變化或者是振幅變化之電壓。 圖七A之渴電流感測部係為本發明所舉之實施例其中之一， •在f狀難錄測II之種雛乡，目此本發鴨指之渦電流感 ，測部並不侷限於圖七A之實施例。如圖七B所示，也是滿電流感 成Up之另一較佳實施例。其中該渦電流感測部4包括有一誘導器 40以及一渦電流檢測器41以偵測研磨基材42之研磨狀態。至於 其原理與前述相同，在此不作贅述。 請參閱圖八A所示’該圖係為本發明之光源產生器以及光源 13 ‘1289091 _ 偵測器示意圖。該光學感測部611包括有一光源產生器6111以及 一光源偵測器6112，該光源產生器Mu可發出一偵測光至該 •研磨基材上。該偵測光會以一特定入射角度入射至該研磨基材5 上，然後再反射由該光源偵測器6112所接收。 請麥閱圖八B以及八C所示，其中圖八β係為在研磨過程中 光源產生器以及光源偵測器偵測研磨基材厚度示意圖；圖八C係 為光源偵測器偵測到具有相位差之反射偵測光示意圖。當該研磨 基材5厚度隨著研磨時間而改變時，該光源偵測器6112所接收到 籲之反射偵測光也會因為光行程改變，而產生具有相位差之訊號。 如當光源偵測器6112偵測到反射光90是由一第一厚度5〇反射回 來的訊號時，其光波訊號94如圖八c所示。當經過一段研磨時間 後’该研磨基材5變成-第二厚度51的時候，該光源债測器6112 所偵測到的反射光之狀態如94，所示，因此光波曲線94與光波曲 線94’相差一相位差Δφ。。該控制單元可藉由該相位差△…來 判斷該研磨基材5之厚度。 唯以上所述者，僅為本發明之較佳實施例，當不能以之限制 _ 本發明範圍。即大凡依本發明申請專利範圍所做之均等變化及修 飾’仍將不失本發明之要義所在，故都應視為本發明的進一步實 施狀況。 綜合上述，本發明之裝置具有降低檢測誤差以及對研磨基材 全區域之檢測能力，不但可以針對不同堆疊材料層進行厚度判別 以及對移除厚度進行點監測外，更可㈣於補基機行移除均 勻度的面監測。因此，本發明之裝置可⑽足#界之需求，進而 提高該產業之競爭力以及帶動週遭產業之發展，誠已符合發明專 利法所規定申請發明所需具備之要件，故爰依法呈提發明專利之 14 1289091 申請，謹請貴審查委員允撥時間惠予審視，並賜準專利為禱。f SUMMARY OF THE INVENTION The main object of the present invention is to provide a polishing monitoring device which is capable of making at least the thickness of 8 1289091 — - (四) to study the thickness of the material of the county and the flat: to the sense of the optical or (4) Flow _ components are formed to eve = research and development of the material for comprehensive thickness inspection _ and sole (4) thickness difference detection purpose In order to achieve the above purpose, the present invention provides a polishing monitoring device, 1 for detecting - grinding the substrate In a surface-grinding state, the polishing monitoring device includes two detecting arms 'which are spaced apart from the abrasive substrate--height; and at least-a sensing portion, which is placed on the detecting arm and is in contact with the abrasive surface of the abrasive substrate Correspondingly, the at least one sensing portion can (4) row-line age transfer fine and fine thickness variation of the material in the grinding. Preferably, the polishing monitoring device further includes an inducer that generates a magnetic field on the abrasive substrate to induce the eddy current to be generated by the abrasive substrate. Preferably, the sensing portion further includes an eddy current detector for detecting the strength of the magnetic field generated by the polishing substrate. Preferably, the sensing portion further comprises a light source generator, wherein the light source generator emits a detection light onto the abrasive substrate. Preferably, the polishing monitoring device further includes at least one optical detector that receives the detected light reflected by the abrasive substrate. The at least one optical detector is disposed on the at least one linear slide, and the linear displacement movement provided by the linear slider receives a plurality of the detected light reflected by the abrasive substrate. Preferably, the polishing monitoring device further includes a telecommunication connection with the sensing portion. The electrical integration unit can integrate the signal of the sensing portion to output a sensing signal. The telecommunications integration unit is further coupled to a control unit, and the control unit can receive the sensing signal to determine the grinding state of the abrasive substrate. 1289091 [Embodiment] In order to enable the stomach reviewing committee to have further knowledge and understanding of the features, objects, and functions of the present invention, the following is a detailed description of the device's detailed structure and beta designation. The detailed description of the features of the present invention is set forth below as follows: FIG. 4 is a schematic view of a first preferred embodiment of the present invention. The polishing monitoring device 3 of the present invention comprises a detecting arm 30 and a sensing portion 1 > the inspection '30' is spaced from the abrasive substrate by a height. The sensing portion 31 is disposed on the detecting arm 30 and corresponds to the grinding surface of the polishing substrate, and the sensing portion 31 can sense the thickness variation of the abrasive substrate during the grinding process and perform a= The displacement movement is 91. The sensing portion 31 & includes an optical sensing portion 311 and an eddy il sensing portion 312', but is not limited thereto. Since the object of the present invention is to grasp the full-area grinding condition of the polishing substrate, such as the thickness of the abrasive substrate or the flatness of the crucible, it is an important feature of the present invention that The portion 31 can perform a displacement motion 91' to grasp the state of grinding of the entire area of the abrasive substrate. Therefore, the combination of the sensing elements of the measuring unit 31 depends on the requirements of the detection, so that it can also be a single optical sensing unit 311 or a single eddy current sensing unit, or the first one in the present case. It is not limited to the combination of the optical sensory and the eddy current sensing unit. For example, if the material of the polishing substrate contains a metal material for the purpose of the accuracy of the detection, the optical sensing portion 311 and the eddy current sensing portion 312 can be combined and used to form the first preferred embodiment of the present invention. The sorrow of the case. In other words, as long as it is for the sensor for the grinding state, it can be within the protection scope of the present invention. The linear displacement motion 9 can be provided in the present embodiment by a linear movement mechanism, 1289091, such as a linear guide 32. The linear guide 32 is disposed on the detecting arm - 30, and the sensing portion 31 is disposed on the linear guide 32. The sensing portion 31 is configured to perform the linear displacement motion 91 on the linear guide 32 to detect the grinding state of the abrasive substrate. Referring to Figure 5, there is shown a schematic view of a second preferred embodiment of the present invention. In the present embodiment, a plurality of sensing portions 61 are disposed on the detecting arm 6 of the polishing monitoring device β, and each of the sensing portions 61 is distributed on the detecting arm 6A at an interval. The sensing portion 61 can perform a linear β-displacement motion 91 by a linear guide 64 provided on the detecting arm 6A. The preferred embodiment can be applied to a large area of the ground substrate to expand the range of detection to avoid excessive movement of the sensing portion and to reduce detection accuracy. Next, the measurement method and principle of the present invention will be described. Please refer to FIG. 6 , which is a schematic diagram of the combination of the grinding monitoring device and the grinding device of the present invention. The grinding device 7 can be a mechanical grinding device, but is not limited thereto. The polishing apparatus 7 includes a rotary table 71, a polishing pad 72, a clamp 74, and a fixing member 73. The rotary table 71 and the clamp 74 are capable of performing a rotational motion 92. The polishing pad 72 is disposed on the rotary table 71. The fixing member 73 is disposed on the clamp 74 to provide a fixed base material 5 that is clamped to the clamp 74. The polishing surface of the abrasive substrate 5 corresponds to the polishing pad 72. Within the rotating table 71, an accommodating space 711 is provided to provide a grinding control device, such as the foregoing preferred embodiment or the third preferred embodiment. In the description of Fig. 6, the polishing monitoring device 6 is constructed using the second comparative embodiment of the present invention. The relevant telecommunication signal wire of the job grinding monitoring device 6 is connected to the _ telecommunications integration unit 62 by the turret. The electrical integration unit 62 can integrate the information of the wire-reduction device of the polishing monitoring device 6 to rotate a sensing signal. The telecommunications integration unit 62 is further coupled to a control unit 1289091 63. The control unit 63 can receive the sensing signal to determine the grinding state of the abrasive substrate 5. As for the abrasive substrate 5 held by the jig 74, the abrasive substrate 5 is subjected to a multilayer metal material stacking process. Referring to FIG. 5 and FIG. 6, during the detection process, the eddy current sensing unit 612 determines the magnetic flux density of the area to be polished, and the detection by the eddy current sensing unit 612 belongs to a large area. Detection. The detection by the optical sensing unit 611 is to read the path of the path that the linear guide 64 moves during the movement, determine the thickness of the abrasive substrate 5 in the region where the reflected light is received, and transmit it to the control unit 63 for processing. . The plurality of sensing portions 61 are included in the polishing monitoring device 6 so that the plurality of sensing portions 61 can respectively capture a plurality of thickness information at a plurality of positions in the endpoint detection and determination. Benchmark point. Then, after grinding for a period of time, the plurality of sensing portions 61 capture information at a plurality of positions, and the thickness difference of each position is obtained by the rib processing of the control unit 9 to further grasp the polishing substrate 5 Grinding state during the grinding process. Please refer to FIG. 7A, which is a schematic diagram of a preferred embodiment of the eddy current sensing unit of the present invention. The eddy current sensing portion 612 includes a core body 6120 having an inducer 6121 in an intermediate portion of the core body 6120. In the embodiment, the inducer 6121 is wound with an excitation coil in an intermediate portion of the core body 612. Driver coil). The eddy current detectors 6122 are respectively disposed on the two sides of the core body 612, and in the embodiment, the eddy current detector 6122 is a pick-up coil (Pickup c〇ii) wound around the core body 6120. . In the characteristics of the eddy current, the density of the eddy current decreases as the depth from the surface of the conductor increases. As shown in the following equation: , 1 〇 = -7 = ^ 12 1289091 - where d is the penetration depth (m), f is the frequency (Hz), σ is the conductivity (niho / in) W is the permeability ( Henry/m). In addition, as the depth increases, the phase angle of the eddy current will also lag regularly. The alternating magnetic field generated by the delayed eddy current also causes a phase change in the induced current generated by the pick-up coil of the eddy current detector 6122. Since the thickness of the abrasive substrate 5 during the grinding process affects the depth of the eddy current penetration, the aforementioned phenomenon occurs, and by the previously established standard, we can utilize the phase change sensed by the eddy current detector 6122. The current is induced to determine the change in depth, and further, the change in the thickness of the abrasive substrate 5 is known. In addition, since the abrasive substrate 5 is a multi-layer metal stack structure, the inducer 6121 carrying alternating current is brought close to the abrasive substrate 5, and the abrasive substrate is made by the parent magnetic field 93 induced by the inducer 6121. The metal conductor on 5 induces eddy current/'il, and the eddy current also generates a magnetic field in a direction opposite to the alternating magnetic field generated by the inducer 6121 to excite the pick-up coil on the eddy current detector 6122 to generate an induced current. . When the thickness of the polishing substrate 5 is changed, the resistance of the polishing substrate 5 is changed, and the eddy current induced by the polishing substrate 5 and the alternating magnetic field generated by the eddy current are also changed. Further, the eddy current detector 6122 detects a voltage having a phase change or an amplitude change. Figure 7A thirst current sensing part is one of the embodiments of the present invention, • In the f-like hard-to-record II species, the current sense of the eddy current of the duck finger is not measured. Limited to the embodiment of Figure 7A. As shown in Fig. 7B, another preferred embodiment of the full current sense Up is also shown. The eddy current sensing portion 4 includes an inducer 40 and an eddy current detector 41 to detect the ground state of the abrasive substrate 42. As for the principle, it is the same as the foregoing, and will not be described here. Please refer to FIG. 8A, which is a schematic diagram of the light source generator and the light source 13 '1289091 _ detector of the present invention. The optical sensing portion 611 includes a light source generator 6111 and a light source detector 6112. The light source generator Mu can emit a detecting light onto the abrasive substrate. The detection light is incident on the abrasive substrate 5 at a specific incident angle, and then reflected by the light source detector 6112. Please refer to Figure 8B and Figure 8C, where Figure 8 is the schematic diagram of the thickness of the polished substrate detected by the light source generator and the light source detector during the grinding process; Figure 8C is the light source detector detected. Schematic diagram of reflected detection light with phase difference. When the thickness of the polishing substrate 5 changes with the polishing time, the reflected light detected by the light source detector 6112 will also generate a signal having a phase difference due to the change of the optical stroke. For example, when the light source detector 6112 detects that the reflected light 90 is reflected back by a first thickness 5 ,, the light wave signal 94 is as shown in FIG. 8c. When the polishing substrate 5 becomes a second thickness 51 after a lapse of a grinding time, the state of the reflected light detected by the light source detector 6112 is as shown in FIG. 94, and thus the light curve 94 and the light curve 94 are obtained. 'The phase difference is Δφ. . The control unit can determine the thickness of the abrasive substrate 5 by the phase difference Δ.... The above is only the preferred embodiment of the present invention, and is not limited thereto. That is, the equivalent changes and modifications made by the present invention in the scope of the present invention will remain without departing from the scope of the present invention, and should be considered as further embodiments of the present invention. In summary, the device of the present invention has the capability of reducing detection error and detecting the entire area of the abrasive substrate, and can not only perform thickness discrimination for different stacked material layers, but also perform point monitoring on removal thickness, and (4) Remove face monitoring for uniformity. Therefore, the device of the present invention can (10) the demand of the world, thereby improving the competitiveness of the industry and promoting the development of the surrounding industry. The company has met the requirements for applying for the invention as stipulated by the invention patent law, and therefore the invention is legally presented. Patent 14 1289091 application, I would like to ask your review board to allow time for review and grant the patent as a prayer.
15 1289091 【固式簡單說明】 圖一係為習用應用於化學機械拋光之端點偵測裝置示意 _ 圖。 '圖二A至圖二C係為金屬堆疊製程示意圖。 圖二係為研磨基材置放於不平整之平台示意圖。 圖四係為本發明之第一較佳實施例示意圖。 圖五係為本發明之第二較佳實施例示意圖。 • 圖六係為本發明之研磨監控裝置與研磨裝置結合示意圖。 圖七A係為本發明之渦電流感測部檢測之較佳實施例示意圖。 圖七B係為本發明之渦電流感測部檢測之另一較佳實施例示意圖。 圖八A係為本發明之光源產生器以及光源偵測器示意圖。 圖八B係為在研磨過程中光源產生器以及光源偵測器偵測研磨基 材厚度示意圖。 1 圖八C係為光源偵測器偵測到具有相位差之反射偵測光示意圖。 【主要元件符號說明】 11- 晶圓基材 12- 研磨墊 13- 固定元件 15- 晶圓夾具 16- 旋轉台 17- 光偵測裝置 20-基板 16 1289091 21 -金屬層 22-介電層 -3-研磨監控裝置 . 30-檢測臂 31_感測部 311- 光學感測部 312- 渦電流感測部 > 32-線性導軌 4- 渦電流感測部 40-誘導器 41 -渴電流檢測器 42-研磨基材 5- 研磨基材 50- 第一厚度 51- 第二厚度 > 6-研磨監控裝置 60-檢測臂 6卜感測部 611- 光學感測部 6111- 光源產生器 6112- 光學偵測器 612- 渦電流感測部 6120-磁性體 1289091 6121-誘導器 - 6122-渦電流檢測器 ' 62-電訊整合單元 63- 控制單元 64- 線性導執 7-研磨裝置 71- 旋轉台 ^ 711-容置空間 72- 研磨墊 73- 固定元件 74- 夾具 81- 平台 82- 參考平面 90、90’ -偵測光 91-線性位移運動 • 92-旋轉運動 93~磁場 94、94’ 光波訊號 1815 1289091 [Flat description of solid type] Figure 1 is a schematic diagram of the end point detection device used in chemical mechanical polishing. 'Figure 2A to Figure 2C are schematic diagrams of the metal stacking process. Figure 2 is a schematic view of the platform on which the abrasive substrate is placed on an uneven surface. Figure 4 is a schematic view of a first preferred embodiment of the present invention. Figure 5 is a schematic view of a second preferred embodiment of the present invention. • Figure 6 is a schematic diagram of the combination of the grinding monitoring device and the grinding device of the present invention. Figure 7A is a schematic view of a preferred embodiment of the eddy current sensing portion of the present invention. Figure 7B is a schematic view of another preferred embodiment of the eddy current sensing portion of the present invention. FIG. 8A is a schematic diagram of a light source generator and a light source detector of the present invention. Figure 8B is a schematic diagram showing the thickness of the polishing substrate detected by the light source generator and the light source detector during the grinding process. 1 Figure 8C is a schematic diagram of the reflected light detected by the light source detector with phase difference. [Main component symbol description] 11- Wafer substrate 12- polishing pad 13- fixing member 15- wafer holder 16-rotating table 17-photodetecting device 20-substrate 16 1289091 21 - metal layer 22 - dielectric layer - 3-grinding monitoring device. 30-detecting arm 31_sensing portion 311- optical sensing portion 312-eddy current sensing portion> 32-linear guide rail 4-eddy current sensing portion 40-inducer 41 - thirst current detection 42 - Abrasive substrate 5 - Abrasive substrate 50 - First thickness 51 - Second thickness > 6 - Abrasive monitoring device 60 - Detection arm 6 Bu sensing portion 611 - Optical sensing portion 6111 - Light source generator 6112 Optical detector 612 - eddy current sensing portion 6120 - magnetic body 1280091 6121 - inducer - 6122 - eddy current detector '62 - telecommunication integration unit 63 - control unit 64 - linear guide 7 - grinding device 71 - rotary table ^ 711-Accommodation space 72- Abrasive pad 73- Fixing element 74- Jig 81- Platform 82- Reference plane 90, 90' - Detecting light 91 - Linear displacement motion • 92-Rotating motion 93~ Magnetic field 94, 94' Light wave Signal 18