TWI278528B - Reduced maintenance chemical oxide removal (COR) processing system - Google Patents

Abstract

A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.

Description

1278528 IX. Description of the invention: ^All the contents of the special application of Shen Lai Department are incorporated into the case for reference. - 々关寻才』甲明案ϊϊϊί In the middle of the request, the title is "Processing System No. 071469/0301073 for processing substrates"; View W. Talent Tiannian 3, ί 中,, titled "Use In the case of a chemically treated substrate, US Patent Application No. 54,642 (Attorney Docket No. 071469/0301087); and the application titled "Processing Methods and Methods for Heat Treating Substrates" In the US Patent No. _ File No. 071469/0301088), and the application for the title of "Methods and Equipment for Thermally Insulating Adjacent Temperature Controls" U.S. Patent Application Serial No. _54,644 (Attorney Docket No. 071469/0292055). & I. [Technical Field of the Invention] The present invention relates to a system and method for treating a substrate. A method for protecting a chemical and a heat treatment chamber. Second, [prior art] In the semiconductor processing, the process of removing or smoothing the thin lines, the leads or the turns of the pattern on the miscellaneous board usually includes a protective layer having an extremely patterned pattern, For example, the layer of the substrate is positioned in the processing chamber. Once the substrate is positioned within the chamber, a detachable, separable gas mixture is introduced into the chamber at a pre-flow rate, and the direct-media pump is adjusted to achieve an ambient treatment pressure. Then, when the presence of the 广, ς particles due to the radio frequency (RF) power transmitted through the inductor or capacitor, or the use of electric cyclotron resonance (ECR) from the microwave god _ mine heated electrons, then 6 1278528 pulp and ίί子子 is used to separate out a certain whole of the surface of the ambient gas;;, ===== seasoning,: m3:" substrate Na contains two oxygen, low-k dielectric materials This f's sign usually includes steps to set the mask layer to set the 1st point of each lining. For example, a photosensitive material such as a (positive or negative) photoresist, including a whistle and an anti-reflective coating layer (ARC), or by a layer such as a photoresist layer. The pattern in the bth is transferred to a hard mask formed by the lower hard mask layer. [Inventive content] The system ίίϋ is a kind of system _ to protect - chemical processing room and / or heat material de-state = For the purpose of executing the material on the substrate, first, it comprises - the first processing chamber and the second processing chamber, the two materials - the two thieves connected to the other two; ί: With at least the chemical processing chamber - the composition of the two ': early (three),. The first processing chamber includes a heat treatment chamber, and at least a heat treatment to a protective barrier layer disposed on one of the compositions. 4. In the material processing method, in order to set a mask for transferring the pattern on the side, the pattern engraving step includes applying a light layer such as a photoresist to the subsequent layer. To be - at the upper surface of the substrate. The patterning of the photosensitive material usually includes the steps of using a lithography system to expose the photosensitive material to the 1278528 stalking wrist, the developing solvent to remove (as in the case of a positive photoresist) or the non-irradiated area (eg The negative photoresist is provided with a grading layer and a hard mask for etching characteristics. For example, in the use step, the mask pattern is transferred to the hard fresh layer using the mask pattern before the main side step, and the hard mask is optional. The two-step process from the Ba-A beta includes, for example, a chemical treatment to change the exposed surface of the hard mask layer of the hard mask layer, and a heat treatment for exposing the exposed surface of the hard mask layer to change the surface. A schematic diagram of a processing system in accordance with an embodiment of the present invention is illustrated. As shown in FIG. 1, a mask is used to treat a substrate, for example, using a mask layer trimming. 1: The processing system 1 can include a first processing System 10, a second processing system 20 of the geographic system 10. For example, the first processing system 10 can produce a heat treatment system, and the second processing system 2G can include a processing system. As shown in the figure! The substrate is transported into and out of the first processing system 10 and the second processing system, and the substrate is exchanged with the duplicate manufacturing system*, so that the transfer system 30 is connected to the first processing system 1 . The processing system 1〇, 2〇 and the transport system 3〇 may, for example, comprise a processing element coupled to the replica system 40. The replica manufacturing secret 4G may permit transfer of the panel, including, for example, a side system, a deposition system, a coating Processing elements such as cloth systems, patterning systems, hand 1 systems, etc. In order to isolate processes occurring in the first and second systems, an isolation assembly 50 can be coupled to each system. The isolation assembly 50 can include at least one of a thermal insulation assembly that provides thermal isolation and a vacuum isolation, and in an alternative embodiment, the processing systems 10, 20 and the delivery system 3 can be In a random order, a controller 60 can be connected to the first processing system 1 , the second processing system 1278528, and the second::::: control to control the first location to form different states. Can be unified with the transmission system 30, usually, such as 1 The processing arrangement f is arranged side by side. The first system, the first processing system, the first processing system, and the second processing opening, the first transmission opening 10 includes The passage between the two systems 30, and the passage between the second transmission and the transmission system and the second processing system 20. Further, the processing system (1) transmits the opening, and the passage of the read permitting substrate may include at least one Say = ί = use a schematic. To heat treatment __- chemistry contains a temperature control of a "can be included door component 2% to the other true L edge if you can use a question Figure 3 is showing this The chemistry diagram of the invention-embodiment. As shown in Figures 2 and 3, the chemical treatment system 22 can be '=, _ _ substantial thermal insulation, and _ support - ene (ptFE) and / or tetrafluoroethylene (TFE) Made. At the same time ^ there are n ^ ^ love (four) - a ^ tilt. Then the %2 barrier layer 241 can be treated by anodic treatment with a metal and _ PTFE and/or TFE impregnated by anodizing. For example, the protective barrier layer can be protected by a hard anode or her ^ 1278528 with = It is formed by impregnating a hard anodized surface with TFE and/or PTFE. In an alternate embodiment, there is no need to protect the barrier layer 241. In an alternative embodiment of the present invention, the protective barrier layer 241 may include Al2〇3, =(Y2〇3), Sc203, Sc2F3, YF3, La2〇3, Ce〇2, Eu2〇3, and Dy〇3. ^ ^ One less. In an additional embodiment of the invention, the protective barrier layer 222 may include a second column of elements (the third column of the table) and the petals, at least one of the elements. In the present invention, the third column element may comprise at least one of 妃, 铳 and 镧. In the present invention, the 嶋 element may comprise at least one of _, 镝 and pin. In the present invention-embodiment, the crane _ 241 may have a minimum thickness, and the maximum thickness may be specified as a constant of at least one of the surfaces of the traverse portion. In another embodiment, the minimum thickness can be a variable across the interior surface. Also, the minimum i degree is a constant that exceeds the first portion of the surface and a change from the second portion of the surface. For example, 'variable thickness can be on the surface, on the corner, or on a hole =: For example, the minimum thickness can be in the range from about 0.5 micron to about 5 〇〇 micron + θ, and the thickness is small. It may fall within a range from about 100 microns to about 200 microns; or the reduced thickness may be at least about 120 microns. The support 240 of the crucible may include an early layer 245° of the reed P disposed on the top surface of the substrate holder 240 and the protective barrier layer 245 is made of a material selected from the range of the album material as described in the protective barrier, and It may have the same thickness as described for the [P layer 241]. Again, the barrier sound 245 may not be required. At the same time, the chemical treatment system 220 may further include a pumping system connected to the pressure in the chemical chamber 221, and the processing gas is introduced into the processing space in the chemical processing chamber 221. An upper component 260. Further, the chemical processing chamber 221 may include a protective barrier layer 222 disposed in one or more of the chemical processing chambers 221. The protective barrier layer 222 can be made of a material of the same material range as described by the barrier layer 241, and has the same thickness as that of the protective barrier layer 241. Again, the 1278528 protective barrier layer 222 may not be required. Additionally, a protective barrier layer 261 can be disposed on more than one inner surface of the upper assembly 26A. The protective barrier layer 261 can be made of a material selected from the same material range as the protective barrier layer 241, and it can have the same thickness as described for the protection b 241. Also, the protective barrier layer 261 may not be required. The present invention may comprise a process having a plurality of steps, which may include, for example, preparing more than one surface to receive a protective barrier layer and then forming a protective barrier layer on those surfaces. One

- As shown in Figures 2 and 5, the heat treatment system 21 can further include a substrate mounted in the heat treatment chamber 211 and constructed to be substantially thermally insulated from the heat treatment chamber 211 and constructed to support, a base, 242, a temperature-controlled substrate. The seat 27 is an empty pump for evacuating the heat treatment chamber 211, the system 28G, the substrate lifting assembly 29A, and the heat treatment chamber 211 ^ a drive system 530. The lifting assembly 290 can vertically move the substrate 242" between a support surface (solid line and substrate support 270 (dashed line) or between one of the transfer surfaces disposed therebetween. The heat treatment chamber 211 can further include an upper assembly 284. In addition, the heat treatment chamber 211 may include a protective barrier layer 212 disposed on one or more inner surfaces of the heat treatment chamber 211. The protective barrier layer 212 may be selected from the same material material as described in the protective barrier layer 241. Made of, and

It may have the same thickness as described for the protective barrier layer 241. Again, the barrier layer 212 may not be required to be protected. In addition, heat treatment to 211, chemical processing chamber 221 and thermal insulation assembly 230 define a universal opening 294 that can transport the substrate. During processing, in order to allow for independent processing of the two processes to 211, 221 ’, a gate valve, 纟 and member 296 may be used to seal the universal opening 294. Further, in order to allow the substrate to be exchanged using a transfer system as shown in Fig. 1, an opening 298 may be provided in the heat treatment chamber 211. The second thermal insulation component 231 is mountable to insulate the thermal processing chamber 211 from the delivery system (not shown). Although the opening 298 is used as part of the heat treatment chamber 211 (as shown in the figure), 'but the transfer opening can be disposed in the chemical processing chamber 221 instead of the heat treatment 11 I278528 (as in The opposite processing chamber position shown in Figure 1). Congruently, the gate valve assembly 290, the universal opening 294, and/or the transfer opening 298 are exposed, and a protective barrier layer (not shown) is placed. The protective barrier layer may be made of a material of the same material range as described in the protective barrier layer 241, and may have the same thickness as described for the protective barrier layer 241. Also, a protective barrier layer may not be required. The processing system 220 can include a substrate holder 240 and a substrate holder assembly 244 for providing a number of operational functions for thermally controlling the substrate 242. The substrate holder 24 and the substrate holder assembly 2 may contain mechanical means for clamping the substrate 242 to the substrate holder 24G - an electrostatic chucking system (or a stacker system). For example, the clamp system can include a top surface that includes ρτρΕ / or TFE. The substrate support 24G may, for example, further comprise a recirculating cooling fluid 1 in which the recirculating cooling fluid is received from the substrate support 24 to a heat exchange system (not shown), Or, when heating, heat energy from 'ΐίίΐΐΐ; again', for example, through a backside gas system, the gas gap between the 240 gas is heated. For example, the supply to the substrate ϋ = Ϊ Ϊ heat if if may include an inert gas such as argon, argon, ^, minus, such as cf4, c4F8, c5F8, (: 4F6, etc. - processing gas, or such as Oxygen, nitrogen, or other neon plate temperature _ can use such a system at a time. For example, the backside gas system can include a boundary of a complex gas distribution system, where the central boundary of the substrate 242 The monthly side gas earning pressure is an independently changeable connection: two heating elements or thermoelectric heaters, cooling 11 heating; but ^ Γ ίί ^ in the substrate holder 240 'simultaneous system can also be included in the chemical processing chamber 221 7 is an embodiment of a seat 300 illustrating the functions of the above-described plurality of field rows. The substrate holder may include a low-walled one-chamber connecting portion 310 connected to the chemical 12 1278528 and connected to the chamber connecting portion 31 () An insulating portion 312, connected to a temperature control element 314 of the insulating portion 312. The chamber is connected to the temperature control element 310, 314 may be made of electrical conductors and thermal conductor materials such as | Lu, stainless steel, nickel, and the like. The insulating portion 312 can be made from, for example, quartz, oxygen Aluminum, TFE, PTFE, etc. are made of low-calorie (4) resistive addition materials. Further, the chamber connection and temperature control elements 31〇, 314 may include one or more outer surfaces. The barrier layers 3, 315 are protected. At the same time, the insulating portion 312 may be insulated to include a protective barrier layer 313 disposed on at least one of its outer surfaces. The protective barrier layers 311, 313 and 315 may be selected from, for example, a protective barrier layer. The same material range of materials as described in 241, and which may have the same thickness as the protective barrier layer tear. Further, the protective barrier layers 3U, 313 and 315 may not be required. 314 may include temperature control elements such as cooling channels, heating channels, or thermoelectric elements. For example, as shown in FIG. 7, the temperature control elements may include and have a coolant inlet 322 and a coolant outlet 324. A coolant passage 32. The coolant passage 320 can be, for example, a spiral passage located within the temperature control element 314 that allows for convective cooling of the temperature control element 314 to allow for materials such as water, Flu()rinert, GaldenHT_135 Coolant fluid. The temperature control element 314 may include an array of thermoelectric elements that can heat or cool the substrate according to the direction of the current flowing through the element from F. The non-standard thermoelectric element is a commercial product AdvancedTherm〇electric M〇d"T_l27-i .4_8.5M (4 〇 mm multiplied by 40 乘m by 3.4 mm thermoelectric device with a maximum π watt heat transfer power). In addition, the substrate holder 300 may further include an electrostatic clamp (ESC) 328, and the electric device, the clamp (the ESQ328 includes a layer 33G, a sweet electrode embedded therebetween, and is connected by using an electrical connection 336). A high voltage straight, voltage, and supply 334 to the clamp electrode 332. The ESC"8 can be, for example, unipolar or bipolar. Thus, the design and the wire of the clamp are electrostatic system technology. I. One, the protective barrier layer 243 can be disposed on the upper surface of the substrate support, and the barrier layer 243 can be selected from a material selected from the same material range as the protective barrier layer 241. The resulting 'and may have the same thickness as described for the barrier barrier layer 13 1278528. Again, the protective barrier layer 243 may not be required. The slab may be further included with the back side gas supply system 34A, a gas of a gas, a gas, a gas, a helium gas, a gas of a helium gas, a heat transfer gas, a gas of a gas, a gas, and the like, and other gases such as oxygen, via at least one gas supply line 342 And the supply to the US ^ ^ back ^ back side gas supply system can be changed to Border supply Green '_ which may be a pressure change towel from the towel radially central thread thermostatic element 314 is connected with the underlying portion 310 of the rail must provide additional

==Insulation gap 35G can utilize a pump system (not shown) belonging to the vacuum pump system 25G i to a gas supply (not shown) or - a straight air 1 gas supply can be used, for example, to heat The transfer gas is connected to the backside gas supply system 34A on the side of the substrate 242. - Bu ΐ ΐ 242 242 242 ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” And in order to attach the substrate support to the treatment to 221, the parts 31〇, 312 and 314 = and the screw ^. In addition, each part 310, 312 and 314 has = = = = = empty:; 2 The temperature of the vacuum sealer of the cymbal ring can be monitored by a temperature sensing device 344 such as a thermocouple (for example, 孰:; =f!, etc.). Therefore, the controller can use the temperature measurement to reverse

It i (four) 'speed, fluid temperature, heat transfer gas type, heat transfer current' material heater element current or voltage, thermoelectric device 14 1278528 Referring again to Figures 2 and 3, the chemical treatment system 220 may include a gas distribution system An upper component 260. In the embodiment shown in Figures 8A and 8B (enlarged view of Figure 8A), a gas distribution system 420 for dispensing a process gas that can include at least two gases, including a gas distribution assembly 424, coupled to the gas distribution The assembly 424 is also configured to couple a first gas to a first gas distribution plate 430 at the processing space of the chemical processing chamber 221, and to the first gas distribution plate 43 and to construct a second gas coupling A second gas distribution plate 432 to the processing space of the chemical processing chamber 221 . The first gas distribution plate 430, when coupled to the gas distribution assembly 424, forms a first gas distribution full load space 440. Further, the second gas distribution plate 432, when connected to the first gas distribution plate 430, forms a second gas distribution full load space 442. Although not shown, the gas distribution is fully loaded 44 〇, 442 may contain more than one gas distribution fork plate. The first gas distribution plate 432 can further include a first array of more than one aperture 444, wherein the first array is connected and conforms to the first gas distribution plate 43. An array of more than one channel, a flute similar to more than one hole 4

In the dry circumference of the knife, the length can be in the range of about 5 mm to about 5 cm from about i lt 夂 夂 夂 夂 曰 。 。 。 。 乂 乂 乂 乂 。 。 。 。 。 。 。 。 5 5 5 5 5 5 5 5 5 5 5 5 In addition,

15 1278528 Referring again to Figures 2 and 3, the chemical processing system 220 can further include a temperature controlled chemical processing chamber 221 maintained at a temperature of one liter. For example, wall temperature control element 266 can be coupled to wall temperature control unit 268, and wall temperature control element 266 can be constructed to connect to chemical processing chamber 221. The temperature control element can comprise, for example, a resistive heater element and/or a cooling element Mb. The temperature of the processing chamber 221 can be temperature sensitive using a temperature sensing device such as a thermocouple (eg, a K-type thermocouple, a platinum sensor, etc.). Monitored. Additionally, to control the temperature of the chemical processing chamber 221, the controller can utilize the temperature measurements to feed back to the wall temperature control unit 268. Referring again to FIG. 3, the chemical processing system 220 can further include an upper assembly 260, wherein the upper resist 260 can include a temperature controlled gas distribution system for maintaining the upper assembly and/or process gas at a selected temperature. . For example, the temperature control element can be coupled to a gas distribution system temperature control unit 269, and the temperature control element 267 can be constructed to be coupled to the gas distribution system 260. The temperature control element can for example comprise a resistive heater element and/or a cooling element. The temperature of the upper assembly and/or process gas can be monitored using temperature sensing devices such as thermocouples (e.g., K-type thermocouples, platinum sensors, etc.). Additionally, to control the temperature of the upper assembly and/or process gas, the controller can utilize temperature measurements to feed back to the gas distribution system temperature control element 269. Referring again to Figures 2 and 3, the vacuum pump system 250 can include a vacuum pump 252 and a gate valve 254 for regulating the process chamber pressure. Vacuum pump 252 may, for example, comprise a turbomolecular direct mass pump (TMP) capable of pumping speeds of up to 5000 liters per second (and above). For example, the TMP can be a Sdk〇 STp marriage vacuum pump: or an ETl3〇l w A empty pump. TMP is quite useful for low pressure processing typically less than 5 Torr. For high pressures (ie greater than about a few millimeters of water) or low throughput (ie no airflow), a mechanical boost pump and a dry low vacuum pump can be used. The chemical processing system 220 can further include a controller 235 having a micro-processing 3 memory and digital I/O ,, wherein the control crying 235 can generate enough to transfer and initiate to the chemical processing system. The input voltage of 22G is the output voltage of temperature and pressure sensing devices in Weitong 22G. Furthermore, the controller 235 is connected to and can be coupled to the substrate holder assembly 244, 1278528, the gas-knife distribution system 260, the vacuum pump system 25, the gate valve assembly 296, the wall temperature control unit = 26^, and the gas distribution system. Control unit 269 exchanges messages. For example, the program stored in memory can be rooted to initiate the input to the financial portion of the chemical process. A controller 235 case is located in the Dexa π_τΙτ=^Ί _fine (four) llp leg face i case 1 'Figure 4 shows more includes a handle 1223 at least one of the chain 1227 cover 1222, the school observation 1225, 1 2 tf induction garment 1220 a chemical treatment system 1220. Edge (not including an optical window (not shown), and an optical window is convexly connected to the wall of the processing chamber. The optical monitoring system can be used to say that it can be used for the two-way penetration 1225. a photomultiplier tube, a CCD, CID, om processing or post-processing processing conditions, so ===== In the embodiment, the optical monitoring determines the monitoring operation of the system state performed by the ,ίίίϊϊ, which may include To the need to clear the i and / or more! ^ level will exceed the threshold, Darley or stop processing., ', ', 疋 2, according to the decision point to continue to study the material deposited on the surface Light control - above material reflection characteristic spectroscopy (〇es) to monitor the coating - system section and (4) wavelength dry circumference. During processing, material thickness, and can monitor the optical properties of the electrical material When the material is determined to pass a specified threshold, it can be determined. When the optical characteristics are over-continued or the process is stopped, the system is required to be based on the decision, as shown in Figures 2 and 5, heat treatment. The system 210 can further include a temperature controlled substrate holder 270. The substrate support The holder 270 includes a pedestal 272 thermally insulated from the thermal processing chamber 211 by a thermal barrier layer 274. For example, the substrate holder 27 can be fabricated from materials such as aluminum, stainless steel or nickel. The thermal barrier layer 274 can be fabricated from a thermal insulator such as PTFE, TFE, alumina, quartz, etc. The substrate holder 270 can further include a temperature control element 276 to be inserted therein, and connected thereto. A substrate holder is temperature-controlled early 278. The temperature control element 276 can include, for example, a resistive heater element and/or a cooling element. The temperature of the substrate holder 270 can utilize, for example, a thermocouple (e.g., a κ type thermocouple). In addition, in order to control the temperature of the substrate holder 270, the controller 275 can use the temperature measurement to feed back to the substrate holder temperature control unit 278. The system 210 can further include a temperature controlled heat treatment chamber 211 maintained at a selected temperature. For example, the thermal wall control element 283 can be coupled to the hot wall temperature control unit 281 and the thermal wall control element 283 Can be connected to the heat treatment room 2 11. The control element may, for example, comprise a resistive heater element such as tungsten, nichrome, aluminum-iron alloy or aluminum nitride filament. Alternatively, or in addition, a cooling element may be used in the heat treatment chamber 211. The temperature of 211 can be monitored using a temperature sensing device such as a thermocouple (eg, a K-type thermocouple, a platinum sensor, etc.) Further, to control the temperature of the thermal processing chamber 211, the controller 275 can utilize the temperature. The measured values are fed back to the hot wall temperature control unit 281. Referring again to Figure 5, the heat treatment system 21 can further include an X temperature control over component 284 maintained at a selected temperature. For example, an upper component temperature control The components are connected to an upper component temperature control unit 286, and the upper component temperature control component 285 is connectable to the upper member 284. The temperature control element may, for example, comprise a resistive heater element such as tungsten, nichrome, aluminum ferrous alloy or aluminum nitride filament. The temperature of the upper assembly 284 can be monitored using a temperature sensing device such as a thermocouple (e.g., a K-type thermocouple, a platinum sensor, etc.). Additionally, to control the temperature of the upper assembly 284, the controller 275 can utilize the temperature measurements to feed back to the upper assembly temperature control unit 286. The upper assembly 18 1278528 284 may additionally or additionally include a cooling element. The Lintu 2 and 5' heat treatment systems 21G may further include a substrate lift group that drives the system 530. The substrate lifting assembly 290 can be constructed to lower a substrate 242 to the upper surface of the substrate holder 27 and lift a substrate 242" from the upper surface of the substrate holder 2J0 to its _-plane or transfer surface. At the transfer surface, the plate 242" can be exchanged with one for transferring the substrate into and out of the chemical and heat treatment chambers 221, 211. In the support domain, the substrate is 242" while the transfer and chemical and heat treatment are performed between 221 and 211, and the substrate 242" is shown. As shown in FIG. 9T, the substrate lifting assembly 29 can include a The blade 5〇〇, wherein the leaf f^00 has two or more lugs 510, a flange 520 for connecting the substrate lifting assembly 29G to 211, and a drive for allowing the feeding of the blades 500 in the heat treatment chamber System 530. The lug 510 is constructed to secure the substrate 242 at the raised position, and, when in the lower position, is configured to receive the recessed substrate support 27 设置 = set receipt. The drive system 53Q can, for example It is designed to meet the specifications of J-tube stroke length, barrel stroke speed, position accuracy, non-rotation accuracy, etc., and its design is related to the technology of pneumatic drive system design. Further, the protective barrier layer 512 can be disposed on more than one blade 5, and the protective barrier layer 512 can be selected from the same material range as described for the protective barrier layer 241. Made of materials, And it may have the same thickness as described for the protective barrier layer 241. Again, the protective barrier layer 512 may not be needed. Referring again to Figures 2 and 5, the heat treatment system 21G may further include a --empty pump truck hollow pump system 280 may, for example, include a vacuum pump, a control valve of the flow valve, and the vacuum pump may include, for example, a turbomolecular vacuum pump capable of pumping speeds of up to 5000 liters per second (and above). Pu (TMp). τΜρ is quite useful for low processing, typically less than 5 〇 milliTorr. For high, ie, greater than about 100 homes, a mechanical booster and dry low straight gang can be used. Referring again to FIG. 5, the heat treatment system 21G may further include a controller 275 having two micro-processing 1278528, memory and -digit 1/0埠, wherein the 匕ΐ ίίΐ is sufficient to transfer and start to the heat treatment system 210. Input, two monitors 匕is ϊ = ο the output control voltage. In addition, the controller 275 is Ϊ L plate support temperature control unit ', upper component temperature control unit 286, upper ^ control unit 281, vacuum Pu system and the training in the base lifting assembly According to a ship, _ stored in the memory to heat the system 21G in the aforementioned part of the input. A control of 275 cases in the Austin, Texas DELL PRECISION WORKSTATION 610TM 四 (four) commercialization " In an alternate embodiment, controllers 235 and 275 can be the same controller. In one case, FIG. 6 further includes 2212, 2212, an optical observation 1225, at least one pressure sensing device 2216, at least one alignment device 2235, and at least one fixture 2236. A processing system 2210. In addition, in order to identify whether the substrate is located in the support surface, the heat may further include a substrate_system 2217. The substrate detection system can, for example, include a Keyence digital laser sensor. In one case, the processing system 2 shown in Figure 2 can be a chemical oxide removal (9) for trimming an oxide hard mask. The processing system may comprise a chemical treatment 220, which is a silk chemical treatment such as an exposed surface layer of an oxide surface layer on the substrate whereby adsorption of the treatment chemical on the exposed surface affects chemical changes in the surface layer. In addition, the processing system includes a heat treatment system 210 for heat treating the substrate whereby the temperature of the substrate is raised by the release (volatilization) of the chemically exposed surface layer on the substrate. In the chemistry, system 220, the processing space 262 (see Figure 2) is evacuated and a process gas containing f hydrofluoric acid and ammonia is introduced. The treatment pressure can range from about ^ to about 1003⁄4 Torr, or fall within the range of from about 2 to about 25 milliTorr. The gas flow rate may range from about 丨 to about 2QGseem for each gas, or fall within a range of from about 10 to about lion per gas. Although the vacuum pump system 250 illustrated in Figures 2 and 3 is accessed from the side of the chemical processing chamber 221, 20 1278528 is a uniform (three-dimensional) pressure domain. Table 1 illustrates the pressure uniformity of the substrate surface as a function of process pressure and spacing between the gas distribution system 260 and the upper surface of the substrate 242. _ (%) h (pitch) _ pressure 50 mm 62 75 100 200 20 mTorr 0.6 NA NA NA NA 9 NA NA 0.75 0.42 NA 7 3.1 1.6 1.2 NA NA 4 5.9 2.8 NA NA NA 3 NA 3.5 3.1 1.7 0.33 Table 1 Further, the chemical processing chamber 221 can be heated to a temperature ranging from about 3 ° C to about i 〇〇〇 c. For example, the temperature can be about 4 〇〇c. Additionally, the gas distribution system can be heated to from about 40 ° C to about 1 Torr. (: a temperature in the range. For example, the temperature may be about 50. (: The substrate system may be maintained at a temperature ranging from about coffee to about 5 generations. For example, the substrate temperature may be about 2 〇〇c. To about .u ^, the value of the solid door is 举例, the temperature can be about 80 ° C. In addition, the upper component can be heated to a range from about 5 〇〇 c to about 〇 c One said: I is about 8 〇. ° The substrate can be heated to more than about 100: c': from about 1QV °c. The chemical treatment and heat treatment described here, 1 out of thermal oxidation The amount of surface layer produced by the chemical chemistry is 'can be produced for each (10) second of the exposed oxide table, which is about 25 nm, which is more than the chemical treatment of the recorded job! 278528 _^ It is also possible to produce side variables that are greater than about 2.5% of the substrate. It is well known that only the exact description of the invention has been described, but for those involved in the second technology, it may be easy to In this case, there are many corrections in the examples. Therefore, there are such amendments in the hall. Included in the scope of the present invention. 22 1278528 V. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a processing system according to an embodiment of the present invention; 3A, FIG. 3 is a cross-sectional view showing a chemical processing system according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view showing a chemical processing system according to another embodiment of the present invention; 5 is a schematic cross-sectional view showing a heat treatment system according to an embodiment of the present invention; FIG. 6 is a view showing a birch section of a heat treatment system according to another embodiment of the present invention; and FIG. 7 is a view showing a substrate according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 8A is a cross-sectional view showing a gas distribution system according to another embodiment of the present invention; FIG. 8A is an enlarged view of a gas distribution system shown in FIG. Fig. 9 is a substrate lifting assembly showing an embodiment of the present invention. [Description of Component Symbols] 200 to Processing System 210 to Heat Treatment System 220 to Chemical Processing System 211 to Heat Treatment 221~chemical processing chamber 222~protective barrier layer 230~thermal insulating component 231~insulating component 240,270~temperature controlled substrate support 241~protective barrier layer 242,242',242"~substrate 23 1278528 243~ centering Ring 244~substrate support assembly 245~protective barrier layer 250,280~vacuum pump system 252~vacuum pump 254~gate valve 260,284~upper component 261~protective barrier layer 262~processing space 266~wall temperature control element 268 ~ Wall temperature control unit 276 ~ temperature control element 278 ~ substrate holder temperature control unit 281 ~ hot wall temperature control unit 283 ~ thermal wall control element 290 ~ substrate lifting assembly 294, 298 ~ general opening 296 ~ gate assembly 500 ~ blade 510 ~ lug 512 ~ protective barrier layer 520 ~ flange 530 ~ drive system

Claims (1)

1278528 X. Patent Application Range: 1. A substrate processing system for reducing maintenance, for processing a substrate, comprising: a chemical processing system for chemically changing an exposed surface layer on the substrate, comprising a temperature a chemical processing chamber, the temperature-controlled chemical processing chamber forming a protective barrier layer on at least a portion of an inner surface thereof; a heat treatment system for heat-treating a chemically altered surface layer on the substrate The method includes a temperature-controlled heat treatment chamber, the temperature-controlled heat treatment chamber forming a protective barrier layer on at least a portion of an inner surface thereof; and w, a thermal insulation component coupled to the heat treatment system and the Chemical treatment system. 2. The substrate processing technique of claim 1, wherein the insulating component comprises a protective barrier layer on at least one exposed surface layer. 3·If the patent is turned over, the first item is to reduce the maintenance of the substrate processing secret. Among them, the 庳卢=processing system ί further includes: a temperature-controlled substrate support, mounted on the ni ϋ 35 and exposed At least part of the surface is formed - a protective barrier ^ιι 帮 帮 帮 , , , 连接 连接 连接 连接 连接 连接 连接 连接 连接 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体Forming a protective barrier layer on at least a portion of the exposed surface and the exposed surface of each of the holes, wherein the gas distribution plate is connected to the chemical processing chamber - temperature controlled The gas distribution Wei; & 8 private into the treatment room: the support 'installed on the heat part of the surface of at least one part of the exposed surface of the formation of a protective barrier layer; and a true two pump system, connected to the a heat treatment chamber; and the treatment system further includes - control money, connected to the chemical treatment system to control the heat treatment system to control at least one of the following: chemical chamber secondary production, temperature, chemical treatment Substrate support temperature, chemical industry ϊ ί ί ί ί ί, chemistry Treatment gas flow rate, heat i room temperature heat treatment substrate support > dish degree, heat treatment substrate temperature, heat treatment treatment pressure 25 1278528 and heat treatment gas flow rate. 4·如^料^Scope! A reduced substrate processing system wherein the protective barrier layer on the inner surface of the chemical processing chamber comprises an anodized metal impregnated with PTFE and/or TFE. The substrate processing system for reducing maintenance of the fourth item, wherein the protective barrier layer on the inner surface of the chemical processing chamber comprises a hard material impregnated with PTFE and/or TFE Anode treated metal. 6. The substrate processing system of claim 4, wherein the metal comprises at least one of aluminum and an aluminum alloy. 7. The substrate processing system of claim 1, wherein the protective barrier layer on the inner surface of the chemical processing chamber comprises Al2〇3, γ2〇3, Sc203, Sc2F3, YF3, At least one of La2〇3, Ce〇2, Eu203 and Dy〇3. 8. The substrate processing system of claim 1, wherein the chemical processing system further comprises a temperature-controlled substrate support, forming a protective barrier layer on at least a portion thereof, mounted on the substrate The protective barrier layer on the temperature controlled substrate support within the chemical processing chamber contains an anodized metal impregnated with PTFE and/or TFE. 9. The substrate processing system of claim 1, wherein the chemical processing system further comprises a temperature-controlled substrate support, forming a protective barrier layer on at least a portion thereof, mounted on the substrate The protective barrier layer on the temperature-controlled substrate support in the chemical processing chamber comprises at least one of Α12〇3, Υ2〇3, Sc203, SC&, Yh, U2C)3, Ce02, Eu203, and Dy03. The invention relates to a substrate processing system for reducing maintenance according to claim 1, wherein the chemical processing system further comprises a gas distribution plate comprising a plurality of gas injection holes and an exposed surface of the gas distribution plate Forming a protective barrier layer on at least a portion of at least a portion of the exposed surface of each of the holes; wherein the gas distribution plate is coupled to a temperature for introducing a process gas into the chemical processing chamber a controlled gas distribution system; the protective barrier layer on the gas distribution plate and the protective barrier layer on each of the pores comprise an anodized metal impregnated with PTFE and/or TFE. 11. The reduced-repair substrate processing system of claim 1, wherein the protective barrier layer on the exposed surface of the gas distribution plate and the protective barrier layer on the exposed surface of each of the holes comprise There is a hard anodized metal that has been impregnated with TFE and/or PTFE. 12. The substrate processing system for reducing maintenance according to claim 10, wherein the metal comprises at least one of an alloy and an alloy. 13. The substrate processing system of claim 1, wherein the chemical processing system further comprises a gas distribution plate comprising a plurality of gas injection holes and at least one of the exposed surfaces of the gas distribution plate Forming a protective barrier layer on at least a portion of the exposed surface of one of the holes; wherein the gas distribution plate is coupled to a temperature controlled source for introducing a process gas into the chemical processing chamber a gas distribution system; the protective barrier layer on the exposed surface of the remote gas distribution plate and the protective barrier layer on the exposed surface of each of the holes comprising Al2〇3, Y2O3, Sc203, Sc2F3, YF3, La203, Ce 〇 2, Eu203 and Dy〇3 at least one of them. 14. The substrate processing system of claim 1, wherein the protective barrier layer on the inner surface of the temperature controlled heat treatment chamber comprises impregnated with 27 1278528 PTFE and/or TFE An anodized metal. Ming, fine 14th of the reduced substrate processing system, zhongzhong, 兮 TFE;; TMϊί ΐΓ and / or PTFEw - hard anodized metal. iUfi is a 14th age maintenance substrate processing system in which the metal contains at least one of Ming and Yiming alloys. The substrate processing system for reducing maintenance of the first item, wherein the protective barrier layer on the surface of the heat treatment chamber contains 2 of them, i, secret, 3, Ce, 2, and Dy 〇 3 3·, Shen, the scope of patents! The substrate processing system for reducing maintenance, wherein the second comprises: a controlled substrate support, installed in the heat treatment chamber, forming a protective barrier layer on at least 7 portions of the 2: ΐϊίί; mounted on the second; The γ-screen μ package on the exposed surface of the temperature-controlled substrate holder in the second and second portions has _ PTFE and/or TFE impregnated - anodized gold = (4) patent fine item Reducing the substrate of the repair, the center of the substrate, and the temperature-controlled substrate support, installed in the heat treatment chamber, forming a protective barrier layer on at least a portion of the exposed surface The early screen layer on the exposed surface of the temperature-controlled substrate holder installed in the chamber includes Al2〇3, Y2〇3, Sc2〇3, Mi, Eu2〇3 and Dy〇3 at least 20. The method of claim 1, wherein the one of the 28 1278528 exposed surface thermal insulation components comprises a gate valve assembly, wherein at least a portion of the gate valve group is formed a protective barrier layer. 21. Reduction in the application of patent item 20 The repaired substrate is treated purely, and the protective screen on the exposed surface of the gate valve assembly has an -anodized metal and/or TFE-impregnated. ^(d) with ME 22. See Patent Application No. 2 The substrate processing system for reducing maintenance, the protective barrier on the exposed surface of the gate valve assembly; the package has Μ ^ = _3, SC2F3, YF3, La2〇3, Ce〇2, 2〇33 and The hearth, the middle, wherein, the substrate processing system of the reduced maintenance according to claim 10 of the patent application includes a first gas and a second gas. The substrate for maintenance reduction according to the scope of claim 23 The treatment system, wherein at least one of ammonia, hydrofluoric acid, hydrogen, oxygen, carbon monoxide, X-ray oxide, argon gas, nitrogen gas and nitrogen gas is applied to the substrate treatment of the reduction of the 23rd item The secret, wherein the ^2, contains at least one of ammonia, hydrofluoric acid, hydrogen, oxygen, carbon oxide, sulphur dioxide, argon, helium and nitrogen. 2-6. Reduction of the substrate at the 23rd item of the scope The system, wherein the plurality of holes comprise a first array of holes connecting the first gas to the processing space and a second array of holes for connecting the second gas to the processing space. A substrate processing system for reducing maintenance according to the ninth aspect of the invention, wherein the processing system further comprises a wire lifting assembly connected to the heat treatment to vertically move between a conveying surface and the substrate holder. Substrate. A substrate processing system for reducing maintenance of the second item; wherein the 2's are provided with three or more ears for receiving the substrate, and having an exposed surface thereof The ^ and - drive system formed on the part, the wire is vertically transmitted between the substrate and the transfer surface = base, the patent scope of the 28th to reduce the maintenance of the substrate processing system, the basin, the position of the rotation The private barrier talks e, the second application, the patent, and the protective barrier layer on the surface of the substrate treatment that reduces the maintenance of the μ item contains ', L3 less. 2 3 °2 3 ' F3 ' U2 (> 3 ' Ce02, Eu2〇3 and Dy〇3 which are to 3 Table 1 统's silk boots learning form on the substrate - exposure -= temperature control, plate support The seat 'installed in the chemistry department - vacuum assisted system, connected to the chemical processing room; and, 'fine number of gas injection holes: the gas distribution plate is connected to the treatment (four) leads to the chemical treatment room - temperature controlled The gas is classified in the chemical processing unit 32. The chemical treatment system of claim 31, wherein the 30 1278528 ί barrier layer contains a chemical treatment system utilizing the brain and/or TFE immersion m item 32, Among them, the ^Houbao barrier layer at the chemical station contains a hard anodized metal using TFE&/ or PTFE dip/bei. 34. Chemical Lu Cai, as in claim 32 Silkan - a person of aluminum and - Ming alloy at least one of the processing system, wherein the metal contains 35 · as claimed in the scope of the 31st chemical chemistry Wang Jun # #士士 y rough & secret, YF3, La2〇3, Ce〇2, such as 2〇3 and %〇3 which are to ^. 峨峨, w plate support with order / shape eight exposure At least one part of the surface is a protective barrier layer. L7f申ίί! The third item of the treatment of Wei, the needle, is formed on the distribution part of the Wei body - the surface of the hole and the exposed surface At least one of the 3ii reheating ίί's with the green treatment and the chemically changed on the substrate - the gamma-cafe (four) - part of the substrate support, the system is installed in The heat treatment chamber; a second, an empty Qingpu system, connected to the heat treatment chamber, and, an assembly of the above, connected to the heat treatment chamber. 31 1278528 A heat treatment system according to item 38, wherein the heat treatment is located The chamber: the impertain treatment ϊΐ protective barrier layer contains a heat treatment system that utilizes PTFE and/or τ responsibilities over fj _ '39, wherein the two hard anode barrier layers located in the heat treatment chamber contain TFE and/or The heat treatment system of the 38th item, which is in the heat treatment room, is located in the heat treatment chamber VF; - U2〇3, 'the treatment method of the treatment room, including the following steps: one inner surface of the treatment chamber At least a portion of the anode is treated; using PTFE and / TFE dipping the anodized surface, thereby creating a protective barrier layer 32