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TW202432291A - 雷射加工裝置、半導體晶片及半導體晶片之製造方法 - Google Patents

雷射加工裝置、半導體晶片及半導體晶片之製造方法 Download PDF

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Publication number
TW202432291A
TW202432291A TW113100371A TW113100371A TW202432291A TW 202432291 A TW202432291 A TW 202432291A TW 113100371 A TW113100371 A TW 113100371A TW 113100371 A TW113100371 A TW 113100371A TW 202432291 A TW202432291 A TW 202432291A
Authority
TW
Taiwan
Prior art keywords
imaging unit
wafer
unit
lenses
switching
Prior art date
Application number
TW113100371A
Other languages
English (en)
Chinese (zh)
Inventor
鈴木芳邦
Original Assignee
日商山葉發動機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商山葉發動機股份有限公司 filed Critical 日商山葉發動機股份有限公司
Publication of TW202432291A publication Critical patent/TW202432291A/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
TW113100371A 2023-02-03 2024-01-04 雷射加工裝置、半導體晶片及半導體晶片之製造方法 TW202432291A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2023/003608 WO2024161635A1 (ja) 2023-02-03 2023-02-03 レーザ加工装置、半導体チップおよび半導体チップの製造方法
WOPCT/JP2023/003608 2023-02-03

Publications (1)

Publication Number Publication Date
TW202432291A true TW202432291A (zh) 2024-08-16

Family

ID=92146010

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113100371A TW202432291A (zh) 2023-02-03 2024-01-04 雷射加工裝置、半導體晶片及半導體晶片之製造方法

Country Status (2)

Country Link
TW (1) TW202432291A (ja)
WO (1) WO2024161635A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060055457A (ko) * 2003-05-22 2006-05-23 가부시키가이샤 토쿄 세이미쯔 다이싱장치
KR20210079323A (ko) * 2018-10-23 2021-06-29 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP2021174806A (ja) * 2020-04-20 2021-11-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
WO2024161635A1 (ja) 2024-08-08

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