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TW201614087A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
TW201614087A
TW201614087A TW104127048A TW104127048A TW201614087A TW 201614087 A TW201614087 A TW 201614087A TW 104127048 A TW104127048 A TW 104127048A TW 104127048 A TW104127048 A TW 104127048A TW 201614087 A TW201614087 A TW 201614087A
Authority
TW
Taiwan
Prior art keywords
supply
plasma processing
supply amount
chamber
feedback control
Prior art date
Application number
TW104127048A
Other languages
Chinese (zh)
Other versions
TWI613306B (en
Inventor
Atsushi Osawa
Satoshi Yamamoto
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Publication of TW201614087A publication Critical patent/TW201614087A/en
Application granted granted Critical
Publication of TWI613306B publication Critical patent/TWI613306B/en

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  • Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

The present invention provides a gas supply technique capable of solving the hunting problem. Two first supply portions 21a supply reactive gas in a fixed first supply amount from an opening portion 22a into a chamber 11. The second supply portion 21b supplies reactive gas in a variable second supply amount from an opening portion 22b into the chamber 11. In said plasma processing, the plasma emission monitor (PEM) method is used for feedback control to adjust the second supply amount. Therefore, because the sputtering device 10 has a second supply portion 21b for performing the feedback control of the second supply amount, the hunting problem caused by the existence of a plurality of feedback controls is eliminated.
TW104127048A 2014-09-30 2015-08-19 Plasma processing apparatus and plasma processing method TWI613306B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-200065 2014-09-30
JP2014200065A JP6373708B2 (en) 2014-09-30 2014-09-30 Plasma processing apparatus and plasma processing method

Publications (2)

Publication Number Publication Date
TW201614087A true TW201614087A (en) 2016-04-16
TWI613306B TWI613306B (en) 2018-02-01

Family

ID=55607678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104127048A TWI613306B (en) 2014-09-30 2015-08-19 Plasma processing apparatus and plasma processing method

Country Status (4)

Country Link
JP (1) JP6373708B2 (en)
KR (1) KR101719423B1 (en)
CN (1) CN105470088B (en)
TW (1) TWI613306B (en)

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WO2018191704A1 (en) * 2017-04-14 2018-10-18 Ioneer, Llc Method and system for measuring plasma emissions in a plasma processing reactor
CN109391456B (en) 2017-08-11 2022-02-15 华为技术有限公司 DMRS (demodulation reference signal) indication and receiving method, transmitting terminal and receiving terminal
JP6942015B2 (en) * 2017-09-27 2021-09-29 株式会社Ｓｃｒｅｅｎホールディングス Film formation equipment and film formation method
CN110872691A (en) * 2018-08-30 2020-03-10 芝浦机械电子装置株式会社 Plasma processing apparatus
JP7507632B2 (en) 2020-08-17 2024-06-28 株式会社Ｓｃｒｅｅｎホールディングス Method for producing aluminum nitride film by sputtering
JP7510457B2 (en) 2022-04-06 2024-07-03 株式会社アルバック Plasma Processing Equipment
CN116997068B (en) * 2023-09-25 2023-12-26 湘潭宏大真空技术股份有限公司 Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine

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Also Published As

Publication number Publication date
CN105470088A (en) 2016-04-06
CN105470088B (en) 2017-07-28
JP2016069687A (en) 2016-05-09
KR20160038727A (en) 2016-04-07
KR101719423B1 (en) 2017-03-23
JP6373708B2 (en) 2018-08-15
TWI613306B (en) 2018-02-01

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