TW201324731A - Stub minimization for assemblies without wirebonds to package substrate - Google Patents
Stub minimization for assemblies without wirebonds to package substrate Download PDFInfo
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- TW201324731A TW201324731A TW101136574A TW101136574A TW201324731A TW 201324731 A TW201324731 A TW 201324731A TW 101136574 A TW101136574 A TW 101136574A TW 101136574 A TW101136574 A TW 101136574A TW 201324731 A TW201324731 A TW 201324731A
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- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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Abstract
Description
本申請案之標的係關於微電子封裝及併有微電子封裝之總成。 The subject matter of this application is directed to microelectronic packages and assemblies incorporating microelectronic packages.
本申請案係2012年4月4日申請之美國申請案第13/439,296號之一接續申請案,該申請案主張2012年2月17日申請之美國臨時申請案第61/600,361號及各自在2011年10月3日申請之美國臨時申請案第61/542,488號及第61/542,553號之申請日之權利。全部該等申請案之內容以引用方式併入本文。 This application is a continuation application filed in the U.S. Application Serial No. 13/439,296 filed on Apr. 4, 2012, which is hereby incorporated by The right to file the filing date of US Provisional Application Nos. 61/542,488 and 61/542,553, filed on October 3, 2011. The contents of all of these applications are incorporated herein by reference.
半導體晶片通常提供作為個別預封裝單元。一標準晶片具有具備一大的正面之一平坦矩形本體,該正面具有連接至該晶片之內部電路之接觸件。每一個別晶片通常包含於具有外部端子之一封裝中,該等外部端子繼而電連接至諸如一印刷電路板之一電路面板且將該晶片之接觸件連接至該電路面板之導體。在許多習知設計中,晶片封裝佔據電路面板之一面積,該面積遠大於晶片本身之面積。如本發明中使用,參考具有一正面之一平坦晶片,「晶片之面積」應被理解為指正面之面積。 Semiconductor wafers are typically provided as individual pre-packaged units. A standard wafer has a flat rectangular body having a large front surface with contacts that are connected to internal circuitry of the wafer. Each individual wafer is typically contained in a package having an external terminal, which in turn is electrically coupled to a circuit such as a printed circuit board and the contacts of the wafer are connected to the conductor of the circuit panel. In many conventional designs, the chip package occupies one area of the circuit panel that is much larger than the area of the wafer itself. As used in the present invention, reference is made to a flat wafer having a front side, and "area of the wafer" is understood to mean the area of the front side.
在「覆晶」設計中,晶片之正面面對一封裝介電元件之面(即,該封裝之基板),且晶片上之接觸件藉由焊料凸塊或其他連接元件直接接合至該基板之接觸件。繼而,該基板可透過覆疊該基板之面之端子接合至一電路面板。該 「覆晶」設計提供一相對緊湊的配置。在一些情況中,每一封裝可為一「晶片級封裝」,該「晶片級封裝」佔據的電路面板之一面積等於或稍微大於晶片之正面之面積,諸如(例如)共同讓與之美國專利第5,148,265號;第5,148,266號;及第5,679,977號之特定實施例中揭示,該等專利之內容以引用方式併入本文。特定的創新安裝技術提供近似或等於習知覆晶接合之緊湊性。大小係晶片之任何實體配置方面的重要考量。隨著可攜式電子裝置之快速發展,要求晶片之實體配置更緊湊已愈來愈強烈。僅僅舉例而言,通常稱為「智慧型電話」之裝置用強大的資料處理器、記憶體及諸如全球定位系統接收器、電子相機及區域網路連接件連同高解析度顯示器及相關聯之影像處理晶片之輔助裝置整合一蜂巢式電話之功能。此等裝置可提供全部在一口袋大小的裝置中之諸如全網連接、包含全解析度視訊之娛樂、導航、電子銀行及更多之能力。複雜的可攜式裝置需要封裝大量晶片成一小的空間。此外,該等晶片之一些具有許多輸入及輸出連接件,通常稱為「I/O」。此等I/O必須與其他晶片之I/O互連。該等互連應短路以最小化信號傳播延遲。形成該等互連之組件不應大幅度增加總成之大小。例如,如諸如其中需增加效能且減小大小之網際網路搜索引擎中使用之資料伺服器中之其他應用中出現類似需求。 In a flip chip design, the front side of the wafer faces a face of the packaged dielectric component (ie, the substrate of the package), and the contacts on the wafer are directly bonded to the substrate by solder bumps or other connecting components. Contact parts. Then, the substrate is bonded to a circuit panel through a terminal covering the surface of the substrate. The The "Cladding" design provides a relatively compact configuration. In some cases, each package can be a "wafer-level package" that occupies one area of the circuit panel that is equal to or slightly larger than the area of the front side of the wafer, such as, for example, a US patent that is commonly assigned. No. 5,148,265; 5,148,266; and 5,679,977, the disclosure of each of which is incorporated herein by reference. Specific innovative mounting techniques provide a compactness that is approximately equal to or equivalent to conventional flip chip bonding. An important consideration in any physical configuration of the size wafer. With the rapid development of portable electronic devices, it has become increasingly more and more demanding that the physical configuration of the wafers is more compact. By way of example only, devices commonly referred to as "smart phones" use powerful data processors, memory and devices such as GPS receivers, electronic cameras and LAN connections along with high-resolution displays and associated images. The auxiliary device for processing the chip integrates the function of a cellular phone. Such devices can provide all of a one-pocket sized device such as a full network connection, entertainment with full resolution video, navigation, e-banking and more. Complex portable devices need to package a large number of wafers into a small space. In addition, some of these wafers have a number of input and output connections, commonly referred to as "I/O." These I/Os must be interconnected with I/Os of other chips. These interconnects should be shorted to minimize signal propagation delay. The components that form the interconnects should not significantly increase the size of the assembly. For example, similar requirements arise in other applications, such as those used in Internet search engines that require increased performance and reduced size.
含有尤其動態隨機存取記憶體晶片(DRAM)及快閃記憶體晶片之記憶體儲存陣列之半導體晶片通常封裝在多晶片 封裝及總成中。每一封裝具有用於載送信號之許多電連接件、介於端子(即,該封裝之外部連接點)與其中的晶片之間之電源及接地。該等電連接件可包含不同種類的導體,諸如在一水平方向上相對於一晶片之一接觸件支承表面延伸之水平導體(例如,跡線、樑形引線等等)、在一垂直方向上相對於該晶片之表面延伸之垂直導體(諸如通孔)及在水平方向及垂直方向兩者上相對於該晶片之表面延伸之引線接合。 Semiconductor wafers containing memory storage arrays, particularly dynamic random access memory chips (DRAMs) and flash memory chips, are typically packaged in multiple wafers In the package and assembly. Each package has a plurality of electrical connections for carrying signals, power and ground between the terminals (ie, the external connection points of the package) and the wafers therein. The electrical connectors may comprise different kinds of conductors, such as horizontal conductors (eg, traces, beam leads, etc.) extending in a horizontal direction relative to a contact bearing support surface of a wafer, in a vertical direction A vertical conductor (such as a via) extending relative to a surface of the wafer and a wire bond extending in a horizontal direction and a vertical direction with respect to a surface of the wafer.
習知微電子封裝可併有主要具有記憶體儲存陣列功能之一微電子元件,即,具體實施更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能之微電子元件。該微電子元件可為或包含一動態隨機存取記憶體(DRAM)晶片或此等半導體晶片之一堆疊電互連總成。通常,此封裝之端子之全部置於與安裝有該微電子元件之一封裝基板之一或多個周邊邊緣相鄰之若干行集合中。例如,在圖1中所示之一習知微電子封裝12中,端子之三行14可經安置與封裝基板20之一第一周邊邊緣16相鄰,且端子之其他三行18可經安置與該封裝基板20之一第二周邊邊緣22相鄰。該習知封裝中之封裝基板20之一中心區域24並不具有任何一行端子。圖1進一步展示該封裝內之一半導體晶片11,該半導體晶片11在其之一面28上具有元件接觸件26,該等元件接觸件26用延伸穿過封裝基板20之中心區域24中之一孔隙(例如,接合窗口)之引線接合30與該封裝12之端子之行14、18電互連。在一些情況中,可在微電子元件11之面28 與該基板20之間安置一黏著層32以增強該微電子元件與該基板之間之機械連接,其中該等引線接合延伸穿過該黏著層32中之一開口。 Conventional microelectronic packages can have microelectronic components that primarily have one of the memory storage array functions, i.e., microelectronic components that implement more active devices to provide memory storage array functionality in addition to any other functionality. The microelectronic component can be or comprise a dynamic random access memory (DRAM) wafer or a stacked electrical interconnect assembly of such semiconductor wafers. Typically, all of the terminals of the package are placed in a set of rows adjacent to one or more peripheral edges of one of the package substrates on which the microelectronic component is mounted. For example, in one of the conventional microelectronic packages 12 shown in FIG. 1, three rows 14 of terminals can be disposed adjacent one of the first peripheral edges 16 of the package substrate 20, and the other three rows 18 of terminals can be placed. Adjacent to one of the second peripheral edges 22 of the package substrate 20. One of the central regions 24 of the package substrate 20 in the conventional package does not have any row of terminals. 1 further shows a semiconductor wafer 11 in the package having element contacts 26 on one of its faces 28 that extend through one of the apertures in the central region 24 of the package substrate 20. Wire bonds 30 (e.g., bonding windows) are electrically interconnected with the rows 14, 18 of the terminals of the package 12. In some cases, it may be on the face 28 of the microelectronic component 11 An adhesive layer 32 is disposed between the substrate 20 to enhance the mechanical connection between the microelectronic component and the substrate, wherein the wire bonds extend through one of the openings in the adhesive layer 32.
鑑於前述,可對在微電子封裝上定位端子進行特定改良以改良尤其包含此等封裝及可安裝有此等封裝且此等封裝彼此電互連之一電路板之總成之電效能。 In view of the foregoing, particular improvements can be made to locating terminals on a microelectronic package to improve the electrical performance of assemblies including, in particular, such packages and one of which can be electrically interconnected.
根據本發明之一態樣之一微電子封裝可包含各自具有記憶體儲存陣列功能之第一微電子元件及第二微電子元件。在一實例中,每一微電子元件可具體實施更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能。每一微電子元件可具有一行或多行元件接觸件,每一行元件接觸件在一第一方向上沿此微電子元件之一面延伸。該封裝可包含一基板,該基板具有第一相對表面及第二相對表面及在該第一表面與該第二表面之間延伸之第一相對邊緣及第二相對邊緣;及曝露於該第一表面處之複數個第一基板接觸件及複數個第二基板接觸件。該等第一基板接觸件可面向該第一微電子元件之元件接觸件且連結至該等元件接觸件,且該等第二基板接觸件可面向該第二微電子元件之元件接觸件且連結至該等元件接觸件。 According to one aspect of the invention, a microelectronic package can include a first microelectronic component and a second microelectronic component each having a memory storage array function. In one example, each microelectronic component can implement more active devices to provide memory storage array functionality in addition to any other functionality. Each microelectronic component can have one or more rows of component contacts, each row of component contacts extending along a face of the microelectronic component in a first direction. The package can include a substrate having a first opposing surface and a second opposing surface and a first opposing edge and a second opposing edge extending between the first surface and the second surface; and exposing to the first a plurality of first substrate contacts and a plurality of second substrate contacts at the surface. The first substrate contacts may face the component contacts of the first microelectronic component and be coupled to the component contacts, and the second substrate contacts may face the component contacts of the second microelectronic component and be connected To these component contacts.
複數個端子可曝露於該基板之第二表面處且與該等第一基板接觸件及該等第二基板接觸件電連接。該等端子可安置於在該第一方向上沿該基板之第二表面延伸之複數個平行行之位置處,且可經組態以將該微電子封裝連接至該微 電子封裝外部之至少一組件。該等端子可包含安置於該基板之第二表面之一中心區域中之該等行之端子之至少一者內之第一端子。該等第一端子可經組態以載送可由該微電子封裝內之電路使用以自該第一微電子元件及該第二微電子元件之一微電子元件之一記憶體儲存陣列之全部可用可定址記憶體位置中判定一可定址記憶體位置之位址資訊。 A plurality of terminals may be exposed at the second surface of the substrate and electrically connected to the first substrate contacts and the second substrate contacts. The terminals can be disposed at a plurality of parallel rows extending along the second surface of the substrate in the first direction and can be configured to connect the microelectronic package to the micro At least one component external to the electronic package. The terminals can include a first terminal disposed in at least one of the rows of terminals in a central region of one of the second surfaces of the substrate. The first terminals can be configured to carry all of the memory storage arrays available from the circuitry within the microelectronic package for use from one of the first microelectronic component and one of the second microelectronic component microelectronic components The address information of the addressable memory location is determined in the addressable memory location.
在一實例中,該中心區域可在橫向於該第一方向之一第二方向上沿基板之第二表面具有一寬度。該中心區域之寬度可不大於該等平行端子行之任何兩相鄰行之間之一最小間距之三倍半。在該第一方向上延伸且相對於該第一微電子元件及該第二微電子元件之該等行之元件接觸件居中之一軸平面可在法向於該基板之第二表面之一第三方向上延伸且可與該第二表面之中心區域相交。 In an example, the central region can have a width along a second surface of the substrate in a second direction transverse to the first direction. The central region may have a width no greater than three and a half times the minimum spacing between any two adjacent rows of the parallel terminal rows. One of the axial planes extending in the first direction and relative to the element contacts of the first microelectronic element and the second microelectronic element may be a third party normal to the second surface of the substrate Extending upwardly and intersecting a central region of the second surface.
在一實例中,該等第一端子可經組態以載送可由該封裝內之電路使用以判定該可定址記憶體位置之位址資訊之全部。 In an example, the first terminals can be configured to carry all of the address information that can be used by circuitry within the package to determine the addressable address of the addressable memory.
在一實例中,該等第一端子可經組態以載送控制該第一微電子元件及該第二微電子元件之一微電子元件之一操作模式之資訊。 In an example, the first terminals can be configured to carry information that controls an operational mode of one of the first microelectronic component and one of the second microelectronic component.
在一實例中,該等第一端子可經組態以載送傳送至該微電子封裝之命令信號之全部。該等命令信號可係寫入啟用信號、列位址選通信號及行位址選通信號。 In an example, the first terminals can be configured to carry all of the command signals transmitted to the microelectronic package. The command signals can be written to the enable signal, the column address strobe signal, and the row address strobe signal.
在一實例中,該等第一端子可經組態以載送傳送至該微電子封裝之時脈信號。該微電子封裝可經組態以使用該等 時脈信號以取樣接收於載送該位址資訊之端子處之信號。 In an example, the first terminals can be configured to carry a clock signal transmitted to the microelectronic package. The microelectronic package can be configured to use the The clock signal is sampled and received at a terminal carrying the address information.
在一實例中,該等第一端子可經組態以載送傳送至該微電子封裝之儲存庫位址信號之全部。 In an example, the first terminals can be configured to carry all of the reservoir address signals transmitted to the microelectronic package.
在一實例中,該等元件接觸件可包含該一行或多行元件接觸件,該等元件接觸件可為含有該等元件接觸件之大多數之第一接觸件。該等元件接觸件可進一步包含曝露於該等微電子元件之至少一者之面處之第二接觸件,該等第二接觸件可經安置與此面之一或多個邊緣相鄰。該等第二接觸件可少於其等任何一行中之第一接觸件之數目。無關於該等第二接觸件之位置,該軸平面可關於該等第一接觸件居中。 In one example, the component contacts can include the one or more rows of component contacts, which can be the majority of the first contacts that contain the component contacts. The component contacts can further include a second contact exposed at a face of at least one of the microelectronic components, the second contacts being positionable adjacent one or more edges of the face. The second contacts may be less than the number of first contacts in any of the rows. Regardless of the position of the second contacts, the axial plane can be centered with respect to the first contacts.
在一實例中,可針對以下至少一者組態該等第二接觸件之各者:連接至一電源或接地之至少一者;或與一探測裝置接觸。 In one example, each of the second contacts can be configured for at least one of: connected to at least one of a power source or ground; or in contact with a detection device.
在一實例中,該等第一端子可安置於該等端子行之不超過四行內之位置處。 In one example, the first terminals can be disposed at positions within no more than four rows of the terminal rows.
在一實例中,該基板可包含一介電元件,該介電元件可在該介電元件之平面中具有小於每攝氏度百萬分之30(「ppm/℃」)之一熱膨脹係數(「CTE」)。 In one example, the substrate can include a dielectric component having a coefficient of thermal expansion ("CTE" of less than 30 parts per million ("ppm/° C.") in the plane of the dielectric component. ").
在一實例中,該基板可包含具有小於12 ppm/℃之一CTE之一元件。 In an example, the substrate can comprise one of the elements having a CTE of less than 12 ppm/°C.
在一實例中,該等端子可經組態以將該微電子封裝連接至可為一電路面板之一外部組件。 In an example, the terminals can be configured to connect the microelectronic package to an external component that can be an electrical circuit panel.
在一實例中,該第一微電子元件及該第二微電子元件之 面可在平行於該基板之第一表面之一單平面中延伸。 In an example, the first microelectronic component and the second microelectronic component The face may extend in a single plane parallel to one of the first surfaces of the substrate.
在一實例中,該微電子封裝可進一步包含覆疊該基板之第一表面之第三微電子元件及第四微電子元件。該第三微電子元件及該第四微電子元件之各者可具體實施更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能。該第三微電子元件及該第四微電子元件可各自具有一面及曝露於此面處之元件接觸件,該等元件接觸件面向並連結至曝露於該基板之第一表面處之各自第三基板接觸件及第四基板接觸件。 In one example, the microelectronic package can further include a third microelectronic component and a fourth microelectronic component overlying the first surface of the substrate. Each of the third microelectronic component and the fourth microelectronic component can implement more active devices to provide memory storage array functionality in addition to any other functionality. The third microelectronic component and the fourth microelectronic component can each have one surface and a component contact exposed at the surface, the component contacts facing and connecting to respective third portions exposed at the first surface of the substrate a substrate contact and a fourth substrate contact.
在一實例中,該第三微電子元件及該第四微電子元件之元件接觸件之至少一些可安置於一行或多行內之位置處。每一行可包含複數個元件接觸件且沿各自第三微電子元件或第四微電子元件之面延伸。在一實例中,該第三微電子元件及該第四微電子元件之每一行元件接觸件可在該第一方向上延伸,其中該軸平面可在該第一微電子元件、該第二微電子元件、該第三微電子元件及該第四微電子元件之全部行中居中。 In an example, at least some of the third microelectronic component and the component contact of the fourth microelectronic component can be disposed at a location within one or more rows. Each row may include a plurality of component contacts and extend along the faces of the respective third or fourth microelectronic component. In one example, each row of component contacts of the third microelectronic component and the fourth microelectronic component can extend in the first direction, wherein the axis plane can be at the first microelectronic component, the second micro The entire row of electronic components, the third microelectronic component, and the fourth microelectronic component are centered.
在一實例中,該第三微電子元件及該第四微電子元件之面可在該單平面中延伸。 In an example, the faces of the third microelectronic component and the fourth microelectronic component can extend in the single plane.
在一實例中,該第三微電子元件及該第四微電子元件之元件接觸件之至少一些可安置於一行或多行內,且每一此行可包含複數個元件接觸件且在橫向於該第一方向之至少一方向上沿各自第三微電子元件或第四微電子元件之面延伸。 In an example, at least some of the third microelectronic component and the component contact of the fourth microelectronic component can be disposed in one or more rows, and each row can include a plurality of component contacts and is transverse to At least one of the first directions extends upward along a face of each of the third microelectronic element or the fourth microelectronic element.
在一實例中,該中心區域可安置於該基板之一矩形區域內,該第一微電子元件、該第二微電子元件、該第三微電子元件及該第四微電子元件之面皆未延伸超出該矩形區域。 In an example, the central region may be disposed in a rectangular region of the substrate, and the first microelectronic component, the second microelectronic component, the third microelectronic component, and the fourth microelectronic component are not Extend beyond the rectangular area.
在一實例中,該第一微電子元件、該第二微電子元件、該第三微電子元件及該第四微電子元件之各者可具有在與各自的微電子元件上之該等行之元件接觸件相同之方向上延伸之兩個平行第一邊緣。每一此微電子元件可具有在橫向於該各自的微電子元件之第一邊緣之一方向上延伸之兩個平行第二邊緣。含有該等微電子元件之至少一者之一第一邊緣且在法向於該各自的微電子元件之面之一方向上延伸之一平面可與該等微電子元件之另一者之第一邊緣相交。 In one example, each of the first microelectronic component, the second microelectronic component, the third microelectronic component, and the fourth microelectronic component can have such behaviors on a respective microelectronic component Two parallel first edges extending in the same direction as the component contacts. Each of the microelectronic elements can have two parallel second edges that extend in a direction transverse to one of the first edges of the respective microelectronic elements. a first edge comprising one of the at least one of the microelectronic elements and extending in a direction normal to one of the faces of the respective microelectronic element and a first edge of the other of the microelectronic elements intersect.
在一實例中,含有該等微電子元件之至少一者之一第一邊緣之平面可僅與其他的微電子元件之一者之第一邊緣相交。 In one example, a plane containing a first edge of one of the at least one of the microelectronic elements can intersect only a first edge of one of the other microelectronic components.
根據本發明之一態樣之一微電子封裝可包含各自具體實施更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能之第一微電子元件及第二微電子元件。每一微電子元件可具有一行或多行元件接觸件。元件接觸件之每一此行可在一第一方向上沿此微電子元件之一面延伸。一基板可具有第一相對表面及第二相對表面及在該第一表面與該第二表面之間延伸之第一相對邊緣及第二相對邊緣。複數個第一基板接觸件及複數個第二基板接觸件可曝露於 該第一表面處。該等第一基板接觸件可面向該第一微電子元件之元件接觸件且連結至該等元件接觸件。該等第二基板接觸件可面向該第二微電子元件之元件接觸件且連結至該等元件接觸件。 A microelectronic package in accordance with one aspect of the present invention can include a first microelectronic component and a second microelectronic component each implementing a plurality of active devices to provide memory storage array functionality in addition to any other functionality. Each microelectronic component can have one or more rows of component contacts. Each such row of component contacts may extend along a face of the microelectronic component in a first direction. A substrate can have a first opposing surface and a second opposing surface and a first opposing edge and a second opposing edge extending between the first surface and the second surface. a plurality of first substrate contacts and a plurality of second substrate contacts are exposed to At the first surface. The first substrate contacts may face the component contacts of the first microelectronic component and be coupled to the component contacts. The second substrate contacts may face the component contacts of the second microelectronic component and be coupled to the component contacts.
複數個端子可曝露於該基板之第二表面處且與該等第一基板接觸件及該等第二基板接觸件電連接。該等端子可安置於在該第一方向上沿該基板之第二表面延伸之複數個平行行內之位置處且可經組態以將該微電子封裝連接至該微電子封裝外部之至少一組件。該等端子可包含安置於該第二表面之一中心區域中之該等行之端子之至少一者內。該等第一端子可經組態以載送可由該微電子封裝內之電路使用以自一記憶體儲存陣列在該第一微電子元件及該第二微電子元件之一微電子元件內之全部可用可定址記憶體位置判定可定址記憶體位置之位址資訊之大多數。該中心區域可在橫向於該第一方向之一第二方向上沿該基板之第二表面具有一寬度,該寬度不大於該等平行端子行之任何兩相鄰行之間之一最小間距之三倍。在該第一方向上延伸且相對於該第一微電子元件及該第二微電子元件之該等行之元件接觸件居中之一軸平面可在法向於該基板之第二表面之一第三方向上延伸且可與該第二表面之中心區域相交。 A plurality of terminals may be exposed at the second surface of the substrate and electrically connected to the first substrate contacts and the second substrate contacts. The terminals can be disposed at a location within the plurality of parallel rows extending along the second surface of the substrate in the first direction and can be configured to connect the microelectronic package to at least one of the exterior of the microelectronic package Component. The terminals can include at least one of the terminals disposed in the center of one of the second surfaces. The first terminals can be configured to carry all of the circuitry within the microelectronic package for use in a memory storage array from one of the first microelectronic component and one of the second microelectronic component Most of the address information of the addressable memory location can be determined by the addressable memory location. The central region may have a width along a second surface transverse to the first direction along a second surface of the substrate, the width being no greater than a minimum spacing between any two adjacent rows of the parallel terminal rows three times. One of the axial planes extending in the first direction and relative to the element contacts of the first microelectronic element and the second microelectronic element may be a third party normal to the second surface of the substrate Extending upwardly and intersecting a central region of the second surface.
在一實例中,該等第一端子可經組態以載送可由該封裝內之電路使用以判定該可定址記憶體位置之位址資訊之至少四分之三。 In an example, the first terminals can be configured to carry at least three-quarters of the address information that can be used by circuitry within the package to determine the addressable address.
根據本發明之一實施例之一微電子封裝可包含具體實施 更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能之一微電子元件。該微電子元件可具有一行或多行元件接觸件,每一行在一第一方向上沿該微電子元件之一面延伸,使得在法向於該微電子元件之面之一方向上延伸之一軸平面沿在該第一方向上延伸之一線與該微電子元件之該面相交且相對於該一行或多行元件接觸件居中。該微電子封裝進一步包含封裝結構,諸如具有覆疊該微電子元件之面且背向該微電子元件之面之一表面之一介電層。可在該介電層之表面處曝露複數個端子,該等端子之至少一些可透過沿該介電層延伸之跡線及自該等跡線延伸並接觸該等元件接觸件之金屬通孔與該等元件接觸件電連接。該等端子可安置於複數個平行行內之位置處且可經組態以將該微電子封裝連接至該微電子封裝外部之至少一組件。該等端子可包含安置於該中心區域中之至少一行內之第一端子。該等第一端子可經組態以載送可由該封裝內之電路使用以自一記憶體儲存陣列在該微電子元件內之全部可用可定址記憶體位置中判定一可定址記憶體位置之位址資訊。該中心區域可不寬於該等端子之任何兩相鄰行之間之一最小間距之三倍半,且該軸平面可與該中心區域相交。 A microelectronic package according to an embodiment of the invention may comprise a specific implementation More active devices provide microelectronic components that are one of the memory storage array functions in addition to any other functionality. The microelectronic component can have one or more rows of component contacts, each row extending along a face of the microelectronic component in a first direction such that one of the axial planes extends in a direction normal to the face of the microelectronic component A line extending in the first direction intersects the face of the microelectronic element and is centered relative to the one or more rows of component contacts. The microelectronic package further includes a package structure, such as a dielectric layer having a surface overlying the face of the microelectronic component and facing away from the face of the microelectronic component. Exposing a plurality of terminals at a surface of the dielectric layer, at least some of the terminals being permeable to traces extending along the dielectric layer and metal vias extending from the traces and contacting the component contacts The component contacts are electrically connected. The terminals can be disposed at a plurality of parallel rows and can be configured to connect the microelectronic package to at least one component external to the microelectronic package. The terminals can include a first terminal disposed in at least one of the central regions. The first terminals can be configured to carry a bit that can be used by circuitry within the package to determine an addressable memory location from all available addressable memory locations within the microelectronic component from a memory storage array Information. The central region may be no wider than three and a half times the minimum spacing between any two adjacent rows of the terminals, and the axial plane may intersect the central region.
在一實例中,該等第一端子可經組態以載送可由該封裝內之電路使用以判定該可定址記憶體位置之位址資訊之全部。 In an example, the first terminals can be configured to carry all of the address information that can be used by circuitry within the package to determine the addressable address of the addressable memory.
在一實例中,該等第一端子可經組態以載送控制該微電子元件之一操作模式之資訊。 In an example, the first terminals can be configured to carry information that controls an operational mode of the microelectronic component.
在一實例中,該等第一端子可經組態以載送傳送至該微電子封裝之命令信號之全部,該等命令信號可係寫入啟用信號、列位址選通信號及行位址選通信號。 In an example, the first terminals can be configured to carry all of the command signals transmitted to the microelectronic package, the command signals can be written to the enable signal, the column address strobe signal, and the row address Gating signal.
在一實例中,該等第一端子可經組態以載送傳送至該微電子封裝之時脈信號,每一微電子封裝可經組態以使用該等時脈信號以取樣接收於載送該位址資訊之端子處之信號。 In an example, the first terminals can be configured to carry clock signals transmitted to the microelectronic package, each microelectronic package can be configured to use the clock signals to sample receive and carry The signal at the terminal of the address information.
在一實例中,該等第一端子可經組態以載送傳送至該微電子封裝之儲存庫位址信號之全部。 In an example, the first terminals can be configured to carry all of the reservoir address signals transmitted to the microelectronic package.
在一實例中,該等端子可經組態以將該微電子封裝連接至可為一電路面板之一外部組件。 In an example, the terminals can be configured to connect the microelectronic package to an external component that can be an electrical circuit panel.
鑑於關於圖1描述之闡釋性習知微電子封裝12,發明者已認知可作出可有助於改良併有一記憶體儲存陣列晶片之一封裝及併有此封裝之一總成之電效能之改良。 In view of the illustrative conventional microelectronic package 12 described with respect to FIG. 1, the inventors have recognized that improvements can be made in electrical performance that can be improved and packaged with one of the memory storage array wafers and with one of the packages. .
當一微電子封裝提供於諸如圖2至圖4中展示之一總成中時可作出特別有用於該微電子封裝之改良,在該總成中,一封裝12A安裝至一電路面板之一表面,其中另一相同封裝12B相對地安裝至該電路面板之一相對表面上。該等封裝12A、12B通常在功能及機械上彼此等效。其他若干對12C及12D;及12E及12F功能及機械等效封裝通常亦安裝至相同的電路面板34。該電路面板及組裝至該電路面板之封裝可形成通常稱為一雙列直插記憶體模組(「DIMM」)之一總成之一部分。每一對相對安裝之封裝(例如,封裝 12A、12B)中之封裝連接至該電路面板之相對表面上之接觸件使得每一對中之封裝通常彼此覆疊大於其等各自面積之90%。該電路面板34內之區域佈線將端子(例如,在每一封裝上標記為「1」及「5」之端子)連接至該電路面板上之全域佈線。該全域佈線包含用以將一些信號傳導至該電路面板34上之連接部位(諸如部位I、II及III)之一匯流排36之信號導體。例如,封裝12A、12B藉由耦合至一連接部位I之區域佈線電連接至該匯流排36,封裝12C、12D藉由耦合至一連接部位II之區域佈線電連接至該匯流排,且封裝12E、12F藉由耦合至連接部位III之區域佈線電連接至該匯流排。 An improvement may be made particularly for a microelectronic package when a microelectronic package is provided in an assembly such as that shown in Figures 2 through 4, in which a package 12A is mounted to one of the surface of a circuit panel. Where another identical package 12B is oppositely mounted to an opposite surface of the circuit panel. The packages 12A, 12B are typically functionally and mechanically equivalent to each other. Other pairs of 12C and 12D; and 12E and 12F functional and mechanical equivalent packages are typically also mounted to the same circuit panel 34. The circuit panel and the package assembled to the circuit panel can form part of one of the assemblies commonly referred to as a dual in-line memory module ("DIMM"). Each pair of oppositely mounted packages (eg, package) The contacts in the packages of 12A, 12B) that are connected to the opposite surfaces of the circuit panel are such that the packages in each pair typically overlap each other by more than 90% of their respective areas. The area wiring within the circuit panel 34 connects terminals (e.g., terminals labeled "1" and "5" on each package) to the global wiring on the circuit panel. The global wiring includes signal conductors for conducting some of the signals to the busbars 36 of one of the connection locations on the circuit panel 34, such as locations I, II, and III. For example, the packages 12A, 12B are electrically connected to the bus bar 36 by a region wiring coupled to a connection portion I, and the packages 12C, 12D are electrically connected to the bus bar by a region wiring coupled to a connection portion II, and the package 12E 12F is electrically connected to the bus bar by a region wiring coupled to the connection portion III.
該電路面板34使用區域互連佈線電互連各自封裝12A、12B之端子,該區域互連佈線呈現為類似於其中在封裝12A之一邊緣16附近標記為「1」之一端子透過該電路面板34連接至在封裝12B之相同邊緣16附近標記為「1」之封裝12B之一端子之十字交叉或「鞋帶」圖案。然而,如組裝至電路面板34之封裝12B之邊緣16遠離封裝12A之邊緣16。圖2至圖4進一步展示在封裝12A之一邊緣22附近標記為「5」之一端子透過該電路面板34連接至在封裝12B之相同邊緣22附近標記為「5」之封裝12B之一端子。在總成38中,封裝12A之邊緣22遠離封裝12B之邊緣22。 The circuit panel 34 electrically interconnects the terminals of the respective packages 12A, 12B using area interconnect wiring that appears similar to one of the terminals labeled "1" near one of the edges 16 of the package 12A through the circuit panel. 34 is connected to a cross or "lace" pattern of one of the terminals of package 12B labeled "1" near the same edge 16 of package 12B. However, the edge 16 of the package 12B as assembled to the circuit panel 34 is remote from the edge 16 of the package 12A. 2 through 4 further illustrate that one of the terminals labeled "5" near one edge 22 of the package 12A is connected through the circuit panel 34 to one of the terminals of the package 12B labeled "5" near the same edge 22 of the package 12B. In assembly 38, edge 22 of package 12A is remote from edge 22 of package 12B.
透過每一封裝(例如,封裝12A)上之端子之間之電路面板至相對地安裝至該電路面板之封裝(例如,封裝12B)上之對應的端子之連接件相當長。如圖3中進一步所示,在 如微電子封裝12A、12B之此總成中,當相同的信號自該匯流排36傳輸至每一封裝時,該電路面板34可使該匯流排之一信號導體與標記為「1」之封裝12A之端子及標記為「1」之封裝12B之對應的端子電互連。類似地,該電路面板34可使該匯流排36之另一信號導體與標記為「2」之封裝12A之端子及標記為「2」之封裝12B之對應的端子電互連。相同的連接配置亦可應用於匯流排之其他信號導體及每一封裝之對應的端子。該電路面板34上之匯流排36與在該電路板之一連接部位I處之各自一對封裝(例如,封裝12A、12B(圖2))之每一封裝之間之區域佈線可呈無端接短線之形式。此區域佈線在相當長時可在一些情況中影響如下文論述之總成38之效能。此外,該電路面板34亦要求區域佈線將其他封裝:該對封裝12C及12D及該對封裝12E及12F之特定端子電互連至該匯流排36之全域佈線,且此佈線亦可以相同方式影響該總成之效能。 The connections through the circuit panels between the terminals on each package (eg, package 12A) to the corresponding terminals on the package (eg, package 12B) that are relatively mounted to the circuit panel are relatively long. As further shown in Figure 3, at In the assembly of microelectronic packages 12A, 12B, when the same signal is transmitted from the busbar 36 to each package, the circuit panel 34 can have one of the bus conductors of the busbar and the package labeled "1". The terminals of 12A and the corresponding terminals of package 12B labeled "1" are electrically interconnected. Similarly, the circuit panel 34 can electrically interconnect another signal conductor of the bus bar 36 with a terminal of the package 12A labeled "2" and a corresponding terminal of the package 12B labeled "2." The same connection configuration can also be applied to other signal conductors of the busbar and corresponding terminals of each package. The area wiring between the bus bar 36 on the circuit panel 34 and each package of the respective pair of packages (eg, the packages 12A, 12B (FIG. 2)) at one of the connection locations I of the circuit board may be unterminated Short-term form. This area routing can affect the performance of assembly 38 as discussed below in some cases. In addition, the circuit board 34 also requires the area wiring to be used for other packages: the pair of packages 12C and 12D and the specific terminals of the pair of packages 12E and 12F are electrically interconnected to the global wiring of the bus bar 36, and the wiring can also be affected in the same manner. The effectiveness of the assembly.
圖4進一步圖解說明經指派以載送信號「1」、「2」、「3」、「4」、「5」、「6」、「7」及「8」之各自若干對端子之微電子封裝12A、12B之間之互連。如圖4中所示,因為端子之行14、18分別在每一封裝12A、12B之邊緣16、22附近,故在橫向於其中端子之行14、18延伸之方向42之一方向40上橫跨該電路面板34所需佈線可相當長。在認知一DRAM晶片之長度在每一側上可在10毫米之範圍中時,圖2至圖4中展示之一總成38中之一電路面板34中將相同信號路由至兩個相對安裝之封裝12A、12B之對應的端子所需 之區域佈線之長度可在5毫米與10毫米之間之範圍中,且通常可為約7毫米。 Figure 4 further illustrates microelectronics assigned to carry a number of pairs of terminals of signals "1", "2", "3", "4", "5", "6", "7" and "8" The interconnection between the packages 12A, 12B. As shown in FIG. 4, because the rows 14, 18 of the terminals are respectively adjacent the edges 16, 22 of each of the packages 12A, 12B, they are transverse in a direction 40 transverse to the direction 42 in which the rows 14, 18 of the terminals extend. The wiring required across the circuit panel 34 can be quite long. When the length of the cognitive DRAM wafer can be in the range of 10 millimeters on each side, the same signal is routed to one of the two relative installations in one of the circuit panels 34 of one of the assemblies 38 shown in FIGS. 2 through 4. Required for the corresponding terminals of the package 12A, 12B The length of the area wiring can be in the range between 5 mm and 10 mm, and can typically be about 7 mm.
在一些情況中,連接此等相對安裝之微電子封裝之端子所需之電路面板佈線之長度不一定嚴重影響總成之電效能。然而,當藉由該等封裝12A、12B上之一對連接的端子載送之信號係來自用以載送位址資訊或其他資訊(諸如用於取樣連接至該電路面板之複數個封裝之記憶體儲存陣列功能之操作共同的位址資訊之時脈資訊)之一匯流排36之一信號時,發明者認知該等短線自該匯流排36延伸至每一封裝上之端子之佈線長度可顯著地影響效能。當互連佈線相當長時,發生一更嚴重的影響,從而可增加傳輸信號之安定時間、振鈴效應、抖動或符號間干擾至一不可接受程度。 In some cases, the length of the circuit panel wiring required to connect the terminals of such relatively mounted microelectronic packages does not necessarily seriously affect the electrical performance of the assembly. However, when the signal carried by one of the packages 12A, 12B is connected to the connected terminal, the signal is used to carry address information or other information (such as a memory for sampling a plurality of packages connected to the circuit panel). The inventor recognizes that one of the busses 36 extends from the busbar 36 to the length of the terminal on each package, and the length of the wiring of the stubs from the busbar 36 is significant. The ground affects efficiency. When the interconnect wiring is relatively long, a more serious effect occurs, which can increase the settling time, ringing effect, jitter, or intersymbol interference of the transmitted signal to an unacceptable level.
在一特定實施例中,用以載送位址資訊之匯流排36可為經組態以載送命令資訊、位址資訊、儲存庫位址資訊及時脈資訊之一命令位址匯流排36。在一特定實施方案中,命令資訊可經傳輸作為該電路面板上之各自的信號導體上之命令信號。位址資訊亦可經傳輸作為各自的信號導體上之位址信號,如儲存庫位址資訊亦可經傳輸作為各自的信號導體上之儲存庫位址信號,且時脈資訊亦可經傳輸作為各自的信號導體上之時脈信號。在具有諸如一DRAM晶片之一記憶體儲存陣列之一微電子元件之一特定實施方案中,可藉由該匯流排36載送之命令信號可為寫入啟用、列位址選通及行位址選通信號,且可藉由該匯流排36載送之時脈 信號可為至少用於取樣藉由該匯流排36載送之位址信號之時脈信號。 In a particular embodiment, the bus 36 for carrying address information may be a command address bus 36 configured to carry command information, address information, repository address information, and time information. In a particular embodiment, the command information can be transmitted as a command signal on a respective signal conductor on the circuit panel. The address information can also be transmitted as an address signal on the respective signal conductor. For example, the repository address information can also be transmitted as a storage address address signal on the respective signal conductor, and the clock information can also be transmitted as Clock signals on the respective signal conductors. In a particular implementation having one of the microelectronic components of a memory storage array such as a DRAM wafer, the command signals that can be carried by the bus 36 can be write enable, column address strobe, and row position Address strobe signal, and the clock that can be carried by the bus 36 The signal can be a clock signal for at least sampling an address signal carried by the bus 36.
因此,本文描述之本發明之特定實施例提供一微電子封裝,其經組態以在一電路面板(例如,電路板、模組板或模組卡或可撓性電路面板)之相對表面上彼此相對地安裝第一此封裝及第二此封裝時允許減小該電路面板上之短線長度。併有在一電路面板之位置處電連接至該電路面板彼此相對之第一微電子封裝及第二微電子封裝之總成可顯著地減小各自的封裝之間之短線長度。減小此等總成內之短線長度可諸如藉由減小安定時間、振鈴效應、抖動或符號間干擾等等之一或多者來改良電效能。此外,亦可能獲得其他好處,諸如簡化電路面板之結構或減小設計或製造電路面板之複雜性及成本,或減小設計及製造電路面板兩者之複雜性及成本。 Accordingly, certain embodiments of the invention described herein provide a microelectronic package configured to be on an opposing surface of a circuit panel (eg, a circuit board, a modular board or a module card or a flexible circuit panel) Mounting the first and second packages opposite each other allows for a reduction in the length of the stub on the circuit panel. And the assembly of the first microelectronic package and the second microelectronic package electrically connected to the circuit panel at a position of the circuit panel can significantly reduce the short length between the respective packages. Reducing the length of the short lines within such assemblies can improve electrical performance, such as by reducing one or more of settling time, ringing effects, jitter, or intersymbol interference. In addition, other benefits may be obtained, such as simplifying the structure of the circuit panel or reducing the complexity and cost of designing or fabricating the circuit panel, or reducing the complexity and cost of designing and fabricating the circuit panel.
因此,圖5及圖6A中圖解說明根據本發明之一實施例之一微電子封裝100。如其中所示,該封裝100可包含具有記憶體儲存陣列功能之一微電子元件130。在一實例中,該微電子元件可經組態以主要提供記憶體儲存陣列功能,其中該微電子元件可具有經組態以提供除任何其他功能以外的記憶體儲存陣列功能之更多個主動裝置,例如電晶體。 Thus, a microelectronic package 100 in accordance with one embodiment of the present invention is illustrated in FIGS. 5 and 6A. As shown therein, the package 100 can include one of the microelectronic components 130 having a memory storage array function. In an example, the microelectronic component can be configured to primarily provide a memory storage array function, wherein the microelectronic component can have more active configurations configured to provide memory storage array functionality in addition to any other functionality A device, such as a transistor.
如進一步所示,該封裝可包含具有第一相對表面120及第二相對表面110之一基板102。該第一相對表面及該第二相對表面面向相反方向,且因此彼此相對,且係「相對表面」。在該基板102之第二表面110處曝露複數個第一端子 104及複數個第二端子106。如本文使用,一導電元件「曝露於」一結構之一表面處之一陳述指示該導電元件可與在垂直於該表面之一方向上自該結構外部朝該表面移動之一理論點接觸。因此,曝露於一結構之一表面處之一端子或其他導電元件可自此表面突出;可與此表面齊平;或可相對於此表面凹陷且透過該結構中之一孔或凹坑而曝露。 As further shown, the package can include a substrate 102 having a first opposing surface 120 and a second opposing surface 110. The first opposing surface and the second opposing surface face in opposite directions, and thus are opposite each other, and are "opposing surfaces." Exposing a plurality of first terminals at the second surface 110 of the substrate 102 104 and a plurality of second terminals 106. As used herein, a conductive element "exposed" to one of the surfaces of a structure indicates that the conductive element is in contact with a theoretical point of movement from the exterior of the structure toward the surface in a direction perpendicular to one of the surfaces. Thus, one of the terminals or other conductive elements exposed to one of the surfaces of a structure may protrude from the surface; may be flush with the surface; or may be recessed relative to the surface and exposed through a hole or pit in the structure .
該基板可包含一薄片狀介電元件,在一些情況中該介電元件基本上可由聚合材料(例如,樹脂或聚醯亞胺等等)組成。或者,該基板可包含具有諸如(例如)BT樹脂之玻璃增強型環氧樹脂之一複合構造或FR-4構造之一介電元件。在另一實例中,該基板可包含具有小於每攝氏度百萬分之12之一熱膨脹係數(「CTE」)之材料之一支撐元件,在該支撐元件上面安置該等端子及其他導電結構。例如,此低CTE元件基本上可由玻璃、陶瓷或半導體材料或液晶聚合物材料或此等材料之一組合組成。 The substrate can comprise a sheet-like dielectric component, which in some cases can consist essentially of a polymeric material (eg, a resin or polyimide, etc.). Alternatively, the substrate may comprise a dielectric element having one of a glass reinforced epoxy resin such as a BT resin or an FR-4 configuration. In another example, the substrate can comprise a support member having a material having a thermal expansion coefficient ("CTE") of less than 12 parts per million per degree Celsius, the terminals and other conductive structures disposed over the support member. For example, the low CTE element can consist essentially of a glass, ceramic or semiconductor material or a liquid crystal polymer material or a combination of such materials.
該等第一端子104可安置於在一第一方向上延伸之複數個平行行104A、104B內之位置處,且該等第二端子106可安置於曝露於該基板之一表面110處之複數行106A及106B內之位置處。在圖5中展示之實例中,行104A及104B可各自含有安置在該表面110之一中心區域112中之一些第一端子,且行106A、106B可各自含有安置在該中心區域外部之各自的周邊區域114A、114B中之一些端子。該中心區域在橫向於該第一方向之一第二方向上具有一寬度。如下文關於圖7B所示及進一步描述,該中心區域不寬於該等平 行端子行之相鄰行之間之一最小間距之三倍半。如上文指示,該等第一端子可經組態以載送傳送至該微電子封裝之位址資訊。在一特定實施例中,該位址資訊可藉由該等第一端子接收自該電路面板上之一匯流排36(例如,一命令位址匯流排)。該位址資訊可接收作為個別位址信號(例如,各自的第一端子上之信號A0至A15),或該位址資訊之一些或全部可接收作為接收於一個以上的第一端子上之電壓位準之一組合(例如,如接收時呈編碼形式之資訊)。在一特定實施例中,該位址資訊之一些或全部在用以取樣該資訊之一時脈之一上升轉變(即,時脈自較高電壓之一第一狀態至較低電壓之一第二狀態之一轉變)時可接收於該等第一端子之一或多者上,或該位址資訊之一些或全部在該時脈之一下降轉變(即,該時脈自較低電壓之第二狀態至較高電壓之第一狀態之一轉變)時可接收於該等第一端子之一或多者上。在又另一實例中,該位址資訊之一些可在該時脈之一上升轉變時接收於該等第一端子之一或多者上,同時該位址資訊之一些可在該時脈之一下降轉變時接收於該等第一端子之一或多者上。 The first terminals 104 can be disposed at positions within a plurality of parallel rows 104A, 104B extending in a first direction, and the second terminals 106 can be disposed at a plurality of locations exposed to a surface 110 of the substrate At the locations within rows 106A and 106B. In the example shown in FIG. 5, rows 104A and 104B can each contain some first terminals disposed in a central region 112 of the surface 110, and rows 106A, 106B can each have respective perimeters disposed outside of the central region. Some of the terminals 114A, 114B. The central region has a width in a second direction transverse to the first direction. As shown below and further described with respect to FIG. 7B, the central region is not wider than the flat Three and a half times the minimum spacing between adjacent rows of row terminal rows. As indicated above, the first terminals can be configured to carry address information transmitted to the microelectronic package. In a particular embodiment, the address information is received by the first terminal from a busbar 36 (eg, a command address bus) on the circuit panel. The address information can be received as individual address signals (eg, signals A0 through A15 on respective first terminals), or some or all of the address information can be received as a voltage received on more than one first terminal A combination of levels (for example, information in the form of a code when received). In a particular embodiment, some or all of the address information is in a rising transition of one of the clocks used to sample the information (ie, the clock is from a first state of the higher voltage to a second of the lower voltage. One of the states may be received on one or more of the first terminals, or some or all of the address information may be shifted in one of the clocks (ie, the clock is from a lower voltage) The second state to one of the first states of the higher voltage may be received on one or more of the first terminals. In yet another example, some of the address information may be received on one or more of the first terminals when one of the clocks is rising, and some of the address information may be at the clock. A falling transition is received on one or more of the first terminals.
如上所述,該等第二端子106可安置在該基板表面110之第一周邊區域114A及第二周邊區域114B之一或多者內之位置處,且可如所示般安置在行106A及106B內之位置處。如圖5中所示,在一些情況中該第一周邊區域及該第二周邊區域可與該表面110之第一相對邊緣116及第二相對邊緣118相鄰。該中心區域112安置於該第一周邊區域114A 與第二周邊區域114B之間。在一實例中,該等第二端子可安置於各自具有複數個第二端子之一行或多行106A、106B內之位置處。 As described above, the second terminals 106 can be disposed at one or more of the first peripheral region 114A and the second peripheral region 114B of the substrate surface 110, and can be disposed in the row 106A as shown. At the location within 106B. As shown in FIG. 5, in some cases the first peripheral region and the second peripheral region can be adjacent to the first opposing edge 116 and the second opposing edge 118 of the surface 110. The central area 112 is disposed in the first peripheral area 114A Between the second peripheral region 114B. In an example, the second terminals can be disposed at locations that each have one or more rows 106A, 106B of the plurality of second terminals.
在一特定實例中,當該微電子元件包含或係一DRAM半導體晶片時,該中心區域中之第一端子可經組態以載送傳送至該微電子封裝之位址資訊,該位址資訊可由該封裝內之電路(例如,藉由列位址解碼器及行位址解碼器及儲存庫選擇電路(若存在))使用以自一記憶體儲存陣列在該微電子元件內之全部可用可定址記憶體位置中判定一可定址記憶體位置。通常,當該微電子元件包含一DRAM晶片時,一實施例中之位址資訊可包含自該封裝外部之一組件(例如,一電路面板)傳送至該封裝之全部位址資訊,該位址資訊可用於判定該微電子封裝內之一記憶體儲存陣列內之一隨機存取可定址記憶體位置以對其讀取存取,或讀取或寫入存取。 In a specific example, when the microelectronic component includes or is a DRAM semiconductor wafer, the first terminal in the central region can be configured to carry address information transmitted to the microelectronic package, the address information The circuitry within the package (e.g., by a column address decoder and row address decoder and bank selection circuitry (if present)) for use in all of the available components within a microelectronic component from a memory storage array The position of the addressable memory is determined in the address memory location. Generally, when the microelectronic component includes a DRAM chip, the address information in an embodiment may include all address information transmitted from one component (for example, a circuit panel) of the package to the package, the address. The information can be used to determine a random access addressable memory location within a memory storage array within the microelectronic package for read access, or read or write access.
在一特定實施方案中,諸如當該微電子元件係自該電路面板上之一命令位址匯流排接收位址信號之一類型時,該等第一端子可經組態以載送位址信號、儲存庫位址信號、特定命令信號及時脈信號,該等時脈信號係用於取樣該等位址信號之時脈。雖然該等時脈信號可為各種類型,但是在一實施例中,藉由此等端子載送之時脈信號可為接收作為差動時脈信號或實際時脈信號及互補時脈信號之一對或多對差動時脈。在此情況中,「命令信號」可為由該微電子封裝內之一微電子元件利用之一寫入啟用信號、一列位 址選通信號及一行位址選通信號。例如,在如圖5中所示之一特定實例中,該等第一端子可包含時脈信號CK及CKB、列位址選通RAS、行位址選通CAS及寫入啟用信號WE且包含位址信號A0至A15及儲存庫位址信號BA0、BA1及BA2。 In a particular embodiment, such as when the microelectronic component is of a type that receives a address signal from a command address bus on the circuit panel, the first terminals can be configured to carry the address signal The storage address signal, the specific command signal, and the pulse signal are used to sample the clock of the address signals. Although the clock signals can be of various types, in one embodiment, the clock signal carried by the terminals can be received as one of the differential clock signal or the actual clock signal and the complementary clock signal. Pair or more pairs of differential clocks. In this case, the "command signal" may be one of the microelectronic components in the microelectronic package using one of the write enable signals, a column of bits Address strobe signal and one row address strobe signal. For example, in one particular example as shown in FIG. 5, the first terminals may include clock signals CK and CKB, column address strobe RAS, row address strobe CAS, and write enable signal WE and include Address signals A0 to A15 and bank address signals BA0, BA1 and BA2.
如圖6A之截面圖中所示,微電子封裝100內之一微電子元件130具有曝露於該微電子元件130之一面134處之元件接觸件132。該等元件接觸件132面向曝露於一基板102之一表面120處之對應的基板接觸件136,且該等元件接觸件連結至該等基板接觸件。例如,該微電子元件之接觸件可使用一接合金屬(諸如焊料、錫、銦、金、低共熔物)或其他導電接合金屬或接合材料以覆晶方式與該基板之接觸件連結。或者,在一適當情況中,可使用諸如金屬與金屬連結之另一技術,例如,在該等元件接觸件132及對應的基板接觸件136之一者或二者上利用銅凸塊之一銅與銅連結製程。 As shown in the cross-sectional view of FIG. 6A, one of the microelectronic components 130 within the microelectronic package 100 has a component contact 132 exposed at one of the faces 134 of the microelectronic component 130. The component contacts 132 face the corresponding substrate contacts 136 exposed at a surface 120 of a substrate 102, and the component contacts are coupled to the substrate contacts. For example, the contacts of the microelectronic component can be flip-chip bonded to the contacts of the substrate using a bonding metal such as solder, tin, indium, gold, eutectic or other conductive bonding metal or bonding material. Alternatively, in an appropriate case, another technique such as metal to metal bonding may be used, for example, one of the copper bumps may be utilized on one or both of the component contacts 132 and the corresponding substrate contacts 136. Connected with copper.
在圖5至圖6A中展示之實例中,一微電子封裝100具有包含曝露於基板102在該基板之表面110之中心區域112中之表面110處之第一端子104之端子之行104A、104B。如圖6B中進一步所示,曝露於該微電子元件130之一面134處之元件接觸件132可安置於各自在一第一方向142上在該微電子元件之面134上延伸之第一行138及第二行139內之位置處。如行138之情況,可完全填滿該微電子元件上之一行接觸件,或如行139之情況,一行接觸件可僅具有該行內 之一些位置處之接觸件。如圖6A至圖6B中所示,該微電子元件130之一軸平面140沿在該第一方向142上延伸之一線與該微電子元件130之面134相交,且該軸平面140亦在法向於該微電子元件之面134之一第二方向上延伸。在圖6B中所示之微電子元件130之情況中,該軸平面140可在該等元件接觸件之行138、139之間居中(例如,等距)之點處與該微電子元件之面134相交。如圖6B中進一步所示,由於元件接觸件之行138、139通常並未在該微電子元件之相對邊緣146、148之間精確地居中,故該軸平面140可且通常在一垂直方向143上沿該面134自在該第一方向142延伸之一中線144移位且在該等相對邊緣146、148之間精確地居中。然而,在一特定實施例中,當該等行138、139之位置經如此安置使得該中線144在該等行之間居中時,該軸平面140可與該中線144重合。 In the example shown in FIGS. 5-6A, a microelectronic package 100 has rows 104A, 104B including terminals of a first terminal 104 exposed at a surface 110 of a substrate 102 in a central region 112 of the surface 110 of the substrate. . As further shown in FIG. 6B, the component contacts 132 exposed at one of the faces 134 of the microelectronic component 130 can be disposed in a first row 138 that each extends over a face 134 of the microelectronic component in a first direction 142. And at the position in the second line 139. As in the case of row 138, one row of contacts on the microelectronic component can be completely filled, or as in the case of row 139, a row of contacts can have only that row. Contacts at some locations. As shown in FIGS. 6A-6B, one of the axial planes 140 of the microelectronic element 130 intersects the face 134 of the microelectronic element 130 along a line extending in the first direction 142, and the axis plane 140 is also normal. Extending in a second direction of one of the faces 134 of the microelectronic component. In the case of the microelectronic component 130 shown in FIG. 6B, the axial plane 140 can be centered (eg, equidistant) between the rows 138, 139 of the component contacts and the microelectronic component 134 intersects. As further shown in FIG. 6B, since the rows 138, 139 of component contacts are typically not accurately centered between opposing edges 146, 148 of the microelectronic component, the axial plane 140 can, and typically is, in a vertical direction 143. Along the face 134 is displaced from a centerline 144 extending in the first direction 142 and is accurately centered between the opposing edges 146, 148. However, in a particular embodiment, when the positions of the rows 138, 139 are so positioned that the centerline 144 is centered between the rows, the axis plane 140 can coincide with the centerline 144.
如圖6B中進一步所示,此外該微電子元件130可包含與該等周邊邊緣146、148之一或多者相鄰之複數個周邊接觸件。此等周邊接觸件可用於連接至電源、接地,或可用作可用於與諸如可用於測試之一探測裝置接觸之接觸件。在此情況中,該軸平面140與該微電子元件之面134之相交可僅相對於經安置在該微電子元件之中心附近彼此相鄰之接觸件行138、139居中。在判定該軸平面140與該微電子元件130相交之位置時,省略經安置與該微電子元件之邊緣146或148之一者相鄰且經組態以連接至電源、接地或探測裝置之其他接觸件192。 As further shown in FIG. 6B, in addition, the microelectronic element 130 can include a plurality of peripheral contacts adjacent one or more of the peripheral edges 146, 148. These peripheral contacts can be used to connect to a power source, ground, or can be used as a contact that can be used in contact with a detector such as one that can be used to test. In this case, the intersection of the axial plane 140 with the face 134 of the microelectronic element can be centered only relative to the contact rows 138, 139 that are adjacent to each other disposed near the center of the microelectronic component. When determining that the axis plane 140 intersects the microelectronic element 130, omitting other ones disposed adjacent one of the edges 146 or 148 of the microelectronic element and configured to connect to a power source, ground, or detection device Contact 192.
因此,該微電子元件之接觸件可包含作為第一接觸件且含有該等接觸件之大多數之該一行或多行接觸件138、139。該微電子元件之接觸件可進一步包含曝露於該微電子元件之面處經安置與該面之一或多個邊緣相鄰之第二接觸件192。該等第二接觸件192比其等之任何一行中之第一接觸件之數目少。在一特定實例中,該等第二接觸件之各者可經組態以連接至一電源、一接地之一者,或經組態以連接至一探測裝置。在完整的封裝100中,此等接觸件可不與該基板102電連接,或在一些情況中可僅電連接至該基板上之對應的電源或接地導體。在此實例中,無關於該等第二接觸件192之位置,該軸平面140與該微電子元件130之面134之相交可相對於該等第一接觸件之行(例如,如圖6B中所示之行138、139)居中。 Thus, the contacts of the microelectronic component can include the one or more rows of contacts 138, 139 that are the first contacts and that contain a majority of the contacts. The contact of the microelectronic component can further include a second contact 192 disposed adjacent the one or more edges of the face exposed to the face of the microelectronic component. The second contacts 192 are less than the number of first contacts in any of the rows. In a particular example, each of the second contacts can be configured to connect to a power source, a ground, or be configured to connect to a detection device. In a complete package 100, such contacts may not be electrically connected to the substrate 102, or in some cases may only be electrically connected to corresponding power or ground conductors on the substrate. In this example, regardless of the location of the second contacts 192, the intersection of the axis plane 140 with the face 134 of the microelectronic element 130 can be relative to the rows of the first contacts (eg, as in Figure 6B). Lines 138, 139) shown are centered.
圖6C圖解說明其中可在一行或兩行338、339中於微電子元件330之中心附近(例如,與該微電子元件之一中心軸140相鄰)安置該微電子元件之接觸件襯墊332之又另一實例。在此實例中,連結至該基板之對應的接觸件136(圖6A)之元件接觸件可為該微電子元件上之再分佈接觸件145、147。與該等接觸件襯墊332電連接之再分佈接觸件145、147之一些或全部可在一或多個方向142、143上沿該微電子元件之一面自該等接觸件襯墊332移位。在一實例中,該等再分佈接觸件可安置在比接觸件襯墊332之行338、339更靠近該微電子元件之邊緣146、148之複數行135、137中。在一特定實例中,該等再分佈接觸件可分佈 在曝露於該微電子元件之表面處之一區域陣列中。在另一特定實例中,該等再分佈接觸件可沿在一第一方向142上延伸之微電子元件之一或多個周邊邊緣146、148分佈,或沿在橫向於方向142之一第二方向143上延伸之微電子元件之一或多個周邊邊緣151、153分佈。在又另一實例中,該等再分佈接觸件可沿該微電子元件之周邊邊緣146、148、151、153之兩者或更多者分佈。在此等實例之任一實例中,該等再分佈接觸件145、147可安置在與該等接觸件襯墊332相同之微電子元件之面上,或安置在與該等接觸件襯墊相對之微電子元件之面上。在一實例中,每一接觸件襯墊可連接至一再分佈接觸件。在另一實例中,可能不存在連接至一或多個接觸件襯墊之再分佈接觸件。未連接至一再分佈接觸件之此一或多個接觸件襯墊332可或不一定電連接至該封裝之一或多個對應的端子。 6C illustrates a contact pad 332 in which the microelectronic component can be placed in the vicinity of the center of the microelectronic element 330 in one or two rows 338, 339 (eg, adjacent one of the central axes 140 of the microelectronic component). Yet another example. In this example, the component contacts that are coupled to corresponding contacts 136 (FIG. 6A) of the substrate can be redistribution contacts 145, 147 on the microelectronic component. Some or all of the redistribution contacts 145, 147 electrically coupled to the contact pads 332 can be displaced from the contact pads 332 along one of the microelectronic elements in one or more directions 142, 143. . In an example, the redistribution contacts can be disposed in a plurality of rows 135, 137 that are closer to the edges 146, 148 of the microelectronic component than rows 338, 339 of the contact pads 332. In a particular example, the redistribution contacts can be distributed In an array of regions exposed at the surface of the microelectronic element. In another particular example, the redistribution contacts can be distributed along one or more peripheral edges 146, 148 of a microelectronic element extending in a first direction 142, or second along a direction transverse to direction 142 One or more peripheral edges 151, 153 of the microelectronic element extending in direction 143 are distributed. In yet another example, the redistribution contacts can be distributed along two or more of the peripheral edges 146, 148, 151, 153 of the microelectronic element. In any of these examples, the redistribution contacts 145, 147 can be disposed on the same face of the microelectronic component as the contact pads 332, or disposed opposite the contact pads On the surface of the microelectronic component. In one example, each contact pad can be coupled to a redistribution contact. In another example, there may be no redistribution contacts connected to one or more contact pads. The one or more contact pads 332 that are not connected to the redistribution contacts may or may not be electrically connected to one or more corresponding terminals of the package.
參考圖6A,該軸平面140與該微電子封裝100之基板102之表面110之中心區域112相交。因此,該軸平面在曝露含有經組態以載送前述提及之位址資訊之第一端子104或(在一特定實施方案中)經組態以載送命令位址匯流排資訊或命令位址匯流排信號之端子之行104A、104B之處與該基板表面110之中心區域112相交。在下文中,應瞭解,參考第一端子指參考曝露於該基板表面之中心區域112中之端子,其中總而言之,無論該等第一端子是否經組態以載送由該微電子封裝內之電路使用以判定一記憶體儲存陣列內之一可定址記憶體位置之位址資訊之全部或至少大部分 (或在一實例中,四分之三或更多),此等端子皆經組態以載送可由該微電子封裝內之電路使用以自此記憶體儲存陣列在該微電子封裝中之一微電子元件內之全部可用可定址記憶體位置中判定一可定址記憶體位置之位址資訊。在一些實施例中,該等第一端子亦可經組態以載送額外的資訊或亦載送信號,諸如上文描述之用於寫入啟用、列位址選通及行位址選通功能之命令資訊或命令信號、儲存庫位址資訊及時脈資訊。 Referring to FIG. 6A, the axial plane 140 intersects a central region 112 of the surface 110 of the substrate 102 of the microelectronic package 100. Thus, the axis plane is configured to carry a command address address bus or command bit that is configured to carry the aforementioned address information of the aforementioned address or (in a particular embodiment) configured to carry command address The row 104A, 104B of the terminal of the address bus signal intersects the central region 112 of the substrate surface 110. In the following, it should be understood that reference to the first terminal refers to terminals that are exposed in the central region 112 of the substrate surface, wherein, in general, whether the first terminals are configured to carry the circuitry used in the microelectronic package Determining all or at least a majority of address information of an addressable memory location within a memory storage array (or in one example, three-quarters or more), the terminals are configured to carry a circuit that can be used by the circuitry within the microelectronic package from the memory storage array in the microelectronic package The address information of an addressable memory location is determined among all available addressable memory locations within the microelectronic component. In some embodiments, the first terminals can also be configured to carry additional information or also carry signals, such as the write enable, column address strobe, and row address strobe described above. Function command information or command signal, repository address information, and timely information.
如圖6A中進一步所示,一接合金屬(例如,焊料、錫、銦或低共熔物或其他導電接合材料)之連結元件154A、154B可連結至該等端子104A、104B,從而可用以將該封裝100之端子連結至該封裝外部之一組件,諸如一電路面板之對應的接觸件。 As further shown in FIG. 6A, a bonding element 154A, 154B of a bonding metal (eg, solder, tin, indium, or eutectic or other electrically conductive bonding material) can be coupled to the terminals 104A, 104B so that The terminals of the package 100 are bonded to one of the components external to the package, such as a corresponding contact of a circuit panel.
如圖7A中進一步所示,在一些情況中,一微電子元件230可僅具有含有曝露於該面134處之複數個接觸件之一行238,在該情況中,軸平面240延伸穿過接觸件之行238。如圖7B中所示,由於該軸平面240併入微電子封裝200中,該軸平面240可在端子之行104A、104B之間之一位置處與該基板表面之中心區域112相交,其中該軸平面240及該等行104A、104B之各者在其中該微電子元件之接觸件之一行238延伸之一第一方向142上延伸。或者,在另一實例(未展示)中,該軸平面240可沿在該第一方向上延伸之一線與該中心區域112相交,其中該線與該等端子之行104A或104B之一者相交。 As further shown in FIG. 7A, in some cases, a microelectronic element 230 can have only one row 238 containing a plurality of contacts exposed at the face 134, in which case the axis plane 240 extends through the contacts. Trip 238. As shown in FIG. 7B, since the axis plane 240 is incorporated into the microelectronic package 200, the axis plane 240 can intersect the central region 112 of the substrate surface at a location between the rows 104A, 104B of the terminal, wherein the axis Each of the plane 240 and the rows 104A, 104B extends in a first direction 142 in which one of the rows 238 of the contacts of the microelectronic element extends. Alternatively, in another example (not shown), the axis plane 240 can intersect the center region 112 along a line extending in the first direction, wherein the line intersects one of the rows 104A or 104B of the terminals .
如圖7B中進一步所示,存在一最小間距150作為該基板上之任何兩相鄰端子行之間之最小距離。該最小間距定義為在方向162上延伸穿過各自的相鄰行之中線之間之最小距離。 As further shown in Figure 7B, there is a minimum pitch 150 as the minimum distance between any two adjacent terminal rows on the substrate. The minimum spacing is defined as the minimum distance between the lines extending through the respective adjacent rows in direction 162.
該最小間距係在垂直於其中配置一特定行(例如,行104A)中之端子之方向142之一方向143上。在圖7B中展示之實例中,該最小間距發生於在該基板110之邊緣116與邊緣118之間彼此最靠近之行104A、104B之間。進一步參考圖7B,該中心區域112在該間距之方向143上(即,在橫向於該第一方向142之一第二方向上)沿該基板表面110具有一最大寬度152,該寬度152不大於任何兩相鄰端子行(例如,端子之行104A、104B)之間之最小間距之三倍半。 The minimum spacing is in a direction 143 that is perpendicular to a direction 142 of the terminals in a particular row (e.g., row 104A). In the example shown in FIG. 7B, the minimum spacing occurs between rows 104A, 104B that are closest to each other between edge 116 and edge 118 of substrate 110. With further reference to FIG. 7B, the central region 112 has a maximum width 152 along the substrate surface 110 in the direction 143 of the pitch (ie, in a second direction transverse to the first direction 142), the width 152 being no greater than Three and a half times the minimum spacing between any two adjacent terminal rows (eg, rows 104A, 104B of the terminals).
圖7C圖解說明第一微電子封裝100A及第二微電子封裝100B之一微電子總成300,該等微電子封裝100A、100B各自係如上文參考圖5至圖6B描述之一微電子封裝100,其等安裝至一電路面板354之相對第一表面350及相對第二表面352。該電路面板可為各種類型,諸如用於一雙列直插記憶體模組(「DIMM」)中之一印刷電路板、與一系統中之其他組件連接之一電路板或一電路面板或一母板等等。該電路面板具有經組態以電連接至微電子封裝之接觸件。在一特定實施例中,該電路面板可包含具有小於每攝氏度百萬分之12(「ppm/℃」)之一熱膨脹係數(「CTE」)之一元件,其中該第一表面及該第二表面處之面板接觸件藉由延伸穿過該元件之通孔而連接。例如,該元件可基本上由半 導體、玻璃、陶瓷或液晶聚合物材料組成。 7C illustrates a microelectronic package 300 of a first microelectronic package 100A and a second microelectronic package 100B, each of which is a microelectronic package 100 as described above with reference to FIGS. 5-6B. They are mounted to the opposite first surface 350 and the opposite second surface 352 of a circuit panel 354. The circuit panel can be of various types, such as a printed circuit board for a dual in-line memory module ("DIMM"), a circuit board or a circuit panel or a module connected to other components in a system. Mother board and so on. The circuit panel has contacts that are configured to electrically connect to the microelectronic package. In a particular embodiment, the circuit panel can include one of the elements having a thermal expansion coefficient ("CTE") of less than 12 parts per million ("ppm/° C.") per degree Celsius, wherein the first surface and the second The panel contacts at the surface are connected by through holes extending through the component. For example, the component can consist essentially of half Conductor, glass, ceramic or liquid crystal polymer material.
該第一微電子封裝100A及該第二微電子封裝100B可安裝至曝露於該電路面板354之第一表面350及第二表面352處之對應的面板接觸件360、362。在圖7C中展示之實例中,該等第一端子104-1及104-2可安置在該第一封裝100A上之一柵格105中之位置處。該第二封裝100B之第一端子104-1及104-2亦可安置在該第二封裝上之一柵格105內之位置處。可完全填滿端子之每一柵格,即,一端子佔據每一柵格之每一位置。或者,每一柵格之一或多個位置不一定被一端子佔據。如圖7C證實,該等柵格可在平行於該電路面板之表面350之x及y正交方向上之一球間間距內彼此對齊,該球間間距不大於任一封裝上之任何兩平行端子行之間之一最小間距。在一特定實例中,該第一封裝及該第二封裝之柵格之位置之至少一半可在平行於該電路面板之第一表面之x及y正交方向上彼此對齊。 The first microelectronic package 100A and the second microelectronic package 100B can be mounted to corresponding panel contacts 360, 362 exposed at the first surface 350 and the second surface 352 of the circuit panel 354. In the example shown in FIG. 7C, the first terminals 104-1 and 104-2 can be disposed at a location in one of the grids 105 on the first package 100A. The first terminals 104-1 and 104-2 of the second package 100B may also be disposed at a position within one of the grids 105 on the second package. Each grid of terminals can be completely filled, i.e., one terminal occupies each position of each grid. Alternatively, one or more locations of each grid are not necessarily occupied by a single terminal. As shown in FIG. 7C, the grids may be aligned with one another in a spacing between the balls in the x and y orthogonal directions parallel to the surface 350 of the circuit panel, the spacing between the balls being no more than any two parallels on either package. The minimum spacing between one of the terminal rows. In a particular example, at least half of the locations of the grids of the first package and the second package can be aligned with each other in an x and y orthogonal direction parallel to the first surface of the circuit panel.
在一特定實例中,該等柵格可在該等x及y方向上彼此對齊使得該第一微電子封裝及該第二微電子封裝上之第一端子之至少一些彼此重合。如本文使用,當第一封裝端子在一電路面板之相對表面處彼此「重合」時,該對齊可在習慣的製造容差內,或可在小於彼此在平行於該第一電路面板表面及該第二電路面板表面之x及y正交方向上之一球間間距的一半之一容差內,該球間間距如上所述。 In a particular example, the grids can be aligned with one another in the x and y directions such that at least some of the first terminals on the first microelectronic package and the second microelectronic package overlap each other. As used herein, when the first package terminals "coincident" with each other at opposite surfaces of a circuit panel, the alignment may be within custom manufacturing tolerances, or may be less than each other in parallel with the first circuit panel surface and The tolerance between the inter-ball spacing is as described above in one of the tolerances of one of the inter-ball spacings in the x and y orthogonal directions of the surface of the second circuit panel.
如所示,該電路面板354內之佈線使封裝100A之端子之一行104A中之一端子104-1與封裝100B之端子之一行104A 中之一端子104-1電連接。圖7C中之虛線320示意地展示形成該等電連接之佈線,此係因為圖7C中提供之特定視圖可能隱藏該佈線。類似地,該電路面板354內之佈線使封裝100A之端子之一行104B之一端子104-2與封裝100B之端子之一行104B之一端子104-2電連接,且圖7C中之虛線322示意地展示此等端子之間之電互連。 As shown, the wiring within the circuit panel 354 causes one of the terminals 104-1 in one of the rows 104A of the package 100A and one of the terminals of the package 100B to be row 104A. One of the terminals 104-1 is electrically connected. The dashed line 320 in Figure 7C schematically shows the wiring forming the electrical connections, as this particular view may be hidden in the particular view provided in Figure 7C. Similarly, the wiring within the circuit panel 354 electrically connects one of the terminals 104-2 of one of the terminals 104B of the package 100A with one of the terminals 104-2 of one of the terminals 104B of the package 100B, and the dotted line 322 in FIG. 7C schematically Shows the electrical interconnection between these terminals.
進一步言之,在如圖7C中所示之一特定實例中,當每一柵格中存在含有第一端子之兩行104A、104B且該等柵格彼此在至少一球間間距內對齊時,該電路面板354上使封裝100A之標記為「A」之第一端子之一者連接封裝100B之標記為「A」之第一端子之一者所需之佈線可相當短。具體言之,當每一封裝上之每一柵格105具有兩行104A、104B且該等柵格105以上述方式對齊時,該第一封裝100A之第一行104A在平行於該電路面板之第一表面350之x及y正交方向上與該第二封裝之第二行104B在一球間間距內對齊,且該第一封裝100A之第二行104B在平行於該電路面板之第一表面350之x及y正交方向上與該第二封裝之第一行104A在一球間間距內對齊。 Further, in a particular example as shown in FIG. 7C, when there are two rows 104A, 104B containing the first terminal in each grid and the grids are aligned with each other within at least one inter-ball spacing, The wiring required to connect one of the first terminals labeled "A" of the package 100A to one of the first terminals of the package 100B labeled "A" on the circuit panel 354 can be relatively short. In particular, when each of the grids 105 on each package has two rows 104A, 104B and the grids 105 are aligned in the manner described above, the first row 104A of the first package 100A is parallel to the circuit panel. The x and y orthogonal directions of the first surface 350 are aligned with the second row 104B of the second package within a ball pitch, and the second row 104B of the first package 100A is parallel to the first of the circuit panels. The x and y orthogonal directions of surface 350 are aligned with the first row 104A of the second package within a ball pitch.
因此,該電路面板354上使該第一封裝100A之一第一端子104-1與該第二封裝100B上之對應的第一端子104-1電連接之短線之電長度可小於每一封裝上之第一端子之一最小間距之7倍,例如,小於圖7B中之第一端子之行104A、104B之間之間距150之7倍。例如,換言之,連接曝露於該電路面板之第一表面及第二表面處使第一面板接觸件及第 二面板接觸件與該電路面板上之一匯流排之一對應的導體電互連之一對經電耦合之第一面板接觸件及第二面板接觸件之導電元件之總組合長度可小於該等面板接觸件之一最小間距之7倍。此外,該第一微電子封裝之第一端子之一者與該第二微電子封裝之第一端子之一對應者之間之電連接件之至少一者之一短線之長度可小於該第一微電子封裝上之第一端子之一最小間距之7倍。在一特定實施例中,當該等第一端子經組態以載送前述提及的命令位址匯流排信號時,連接曝露於該電路面板之第一表面及第二表面處使第一面板接觸件及第二面板接觸件與該電路面板上之對應的命令位址匯流排信號之一者電互連之一對經電耦合之第一面板接觸件及第二面板接觸件之導電元件之總組合長度可小於該等面板接觸件之一最小間距。在又另一實例中,該第一封裝100A之一第一端子104-1與該第二封裝100B上之對應的第一端子104-1之間之連接件之電長度可近似與該電路板354在第一表面350與第二表面352之間之一厚度356相同。 Therefore, the electrical length of the short circuit connecting the first terminal 104-1 of the first package 100A and the corresponding first terminal 104-1 of the second package 100B on the circuit board 354 can be less than that on each package. 7 times the minimum pitch of one of the first terminals, for example, less than 7 times the distance 150 between the rows 104A, 104B of the first terminal in FIG. 7B. For example, in other words, the connection is exposed to the first surface and the second surface of the circuit panel to make the first panel contact and the first The total combined length of one of the two-panel contacts and one of the conductor electrical interconnects corresponding to one of the busbars on the circuit panel may be less than the total combined length of the electrically coupled first panel contact and the second panel contact conductive component One of the minimum spacing of one of the panel contacts is 7 times. In addition, the length of the short line of at least one of the electrical connectors between the first terminal of the first microelectronic package and the corresponding one of the first terminals of the second microelectronic package may be less than the first length One of the first terminals of the microelectronic package has a minimum pitch of 7 times. In a particular embodiment, when the first terminals are configured to carry the aforementioned command address bus signal, the connection is exposed at the first surface and the second surface of the circuit panel such that the first panel The contact member and the second panel contact are electrically interconnected with one of the corresponding command address bus signals on the circuit panel, and the electrically coupled first panel contact and the second panel contact conductive member The total combined length can be less than the minimum spacing of one of the panel contacts. In yet another example, the electrical length of the connector between the first terminal 104-1 of the first package 100A and the corresponding first terminal 104-1 of the second package 100B can be approximated to the circuit board. 354 is the same thickness 356 between the first surface 350 and the second surface 352.
減小此等電連接件之長度可減小該電路面板及該總成中之短線長度,從而可有助於改良電效能,諸如減小藉由該等第一端子載送且傳送至該第一封裝及該第二封裝二者中之微電子元件之上述信號之安定時間、振鈴效應、抖動或符號間干擾等等。 Reducing the length of the electrical connectors reduces the length of the stubs in the circuit panel and the assembly, thereby contributing to improved electrical performance, such as reducing carrier transport by the first terminals and transmitting to the The settling time, ringing effect, jitter or intersymbol interference of the above-mentioned signals of the microelectronic components in both the package and the second package.
此外,亦可獲得其他好處,諸如簡化電路面板之結構或減小設計或製造電路面板之複雜性及成本。即,電路面板 上之連接件可需要較少的佈線層以使每一封裝之第一端子互連至電路面板上之匯流排,諸如上文論述之載送位址資訊之匯流排或一命令位址匯流排。 In addition, other benefits can be obtained, such as simplifying the structure of the circuit panel or reducing the complexity and cost of designing or manufacturing the circuit panel. That is, the circuit panel The upper connector may require fewer wiring layers to interconnect the first terminal of each package to a busbar on the circuit panel, such as the bus or carrier address bus of the carrier address information discussed above. .
此外,有時可減小路由來自藉由該等第一端子載送之上述信號(例如,位址資訊或命令位址匯流排信號)之信號所需之導體之全域路由層(即,沿大體上平行於電路面板之一表面之至少一方向上延伸之佈線)之數目。例如,其中連接一第一對微電子封裝100A、100B之一連接部位與其中連接至少一其他微電子封裝之一不同連接部位之間(例如,微電子封裝上之連接部位II與III之間(圖7D))之此等全域路由層之數目在根據本文的原理構造附接至此等全域路由層之微電子封裝時可能有所減小。具體言之,在一些情況中,沿電路面板路由此等信號所需之全域路由層之數目可減小至兩個或更少路由層。在一特定實例中,可存在用於全域路由其中連接第一微電子封裝及第二微電子封裝之一連接部位與電連接至少一第三微電子封裝100A或100B之一不同連接部位之間之上述位址或命令位址匯流排信號之全部之不超過一個的路由層。然而,在電路面板上,可存在用以載送除上述位址或命令位址匯流排信號以外的信號之更多個全域路由層。圖7D圖解說明併有一電路面板及彼此相對安裝至該電路面板之第一相對表面及第二相對表面之複數個微電子封裝之一微電子總成,諸如(例如)一DIMM等等。如圖7D中所示,可在一匯流排36(例如,該電路面板或電路板354上之一位址匯流排或命令位址匯流排) 上在各自若干對微電子封裝100A、100B連接至該電路面板之相對側之連接部位I、II或III之間之至少一方向143上路由上述位址信號或命令位址匯流排信號。此匯流排36之信號在該等各自的連接部位I、II或III處在稍微不同的時間到達每一對封裝。該至少一方向143可橫向於或正交於其中每一封裝100A或100B內之至少一微電子元件上之複數個接觸件之至少一行138延伸之一方向142。以此方式,在一些情況中,該電路面板354上(即,該電路面板354上或該電路面板354內)之匯流排36之信號導體可在平行於連接至該電路面板之一封裝100A或100B內之一微電子元件上之接觸件之至少一行138之一方向142上彼此分開。尤其當每一微電子封裝之第一端子104-1、104-2安置於在此方向142上延伸之一行或多行內之位置處時,此組態可有助於簡化該電路面板上用以路由該匯流排36之信號之一或多個全域路由層之信號導體之路由。例如,當每一封裝上之相同垂直佈局位置處安置相對較少的第一端子時,可簡化一電路面板上之命令位址匯流排信號之路由。因此,在圖5中展示之實例中,每一封裝上之相同垂直佈局位置處僅安置兩個第一端子104,諸如經組態以接收位址信號A3及A1之第一端子104。 In addition, it is sometimes possible to reduce the global routing layer of conductors required to route signals from the signals (eg, address information or command address bus signals) carried by the first terminals (ie, along a general The number of wirings that extend upward in parallel with at least one of the surfaces of one of the circuit panels. For example, a connection portion connecting one of the first pair of microelectronic packages 100A, 100B is connected between a different connection portion of one of the other microelectronic packages (for example, between the connection portions II and III on the microelectronic package) (for example, between the connection portions II and III on the microelectronic package) The number of such global routing layers of Figure 7D)) may be reduced when constructing microelectronic packages attached to such global routing layers in accordance with the principles herein. In particular, in some cases, the number of global routing layers required to route such signals along a circuit panel can be reduced to two or fewer routing layers. In a specific example, there may be a global routing between a connection point connecting one of the first microelectronic package and the second microelectronic package and a different connection point electrically connecting one of the at least one third microelectronic package 100A or 100B None of the above address or command address bus signals exceeds one routing layer. However, on the circuit panel, there may be more global routing layers for carrying signals other than the address or command address bus signals described above. Figure 7D illustrates a microelectronic assembly of a plurality of microelectronic packages, such as, for example, a DIMM or the like, having a circuit panel and a plurality of microelectronic packages mounted opposite the first and second opposing surfaces of the circuit panel. As shown in FIG. 7D, a bus bar 36 (eg, an address bus or command address bus on the circuit panel or board 354) can be used. The address signal or command address bus signal is routed in at least one direction 143 between each of the plurality of connection locations I, II or III to which the microelectronic packages 100A, 100B are connected to opposite sides of the circuit panel. The signals of this bus bar 36 arrive at each pair of packages at slightly different times at the respective connection locations I, II or III. The at least one direction 143 can extend in one direction 142 transversely or orthogonally to at least one row 138 of the plurality of contacts on at least one of the microelectronic elements within each of the packages 100A or 100B. In this manner, in some cases, the signal conductors of the busbars 36 on the circuit panel 354 (ie, on the circuit panel 354 or within the circuit panel 354) may be parallel to the package 100A connected to the circuit panel or One of the at least one row 138 of contacts on one of the microelectronic components in 100B is separated from one another in direction 142. This configuration can help simplify the use of the circuit panel, particularly when the first terminals 104-1, 104-2 of each microelectronic package are disposed at positions within one or more rows extending in this direction 142. Routing the signal conductors of one or more global routing layers of the signal of the bus 36. For example, routing of command address bus signals on a circuit panel can be simplified when relatively few first terminals are placed at the same vertical layout location on each package. Thus, in the example shown in FIG. 5, only two first terminals 104 are disposed at the same vertical layout location on each package, such as the first terminal 104 configured to receive the address signals A3 and A1.
在一例示性實施例中,該微電子總成354可具有一第二微電子元件358,該第二微電子元件358可包含經組態以執行傳送至該總成354之微電子封裝100A、100B之至少一些信號之緩衝之一半導體晶片。在一特定實施例中,該第二 微電子元件可經組態以主要執行諸如一固態驅動控制器之一邏輯功能,且該等微電子封裝100A、100B中之微電子元件358之一或多者可各自包含諸如非揮發性快閃記憶體之記憶儲存元件。在一實例中,該第二微電子元件358可包含經組態以自監督傳送資料至包含於該等微電子元件130中之記憶體儲存元件且自該等記憶體儲存元件130傳送資料中解除諸如系統1500(圖19)之一中央處理單元之一專用處理器。包含一固態驅動控制器之此一微電子元件358可提供對諸如該系統1500之一系統之一母板(例如,圖19中展示之電路面板1502)上之一資料匯流排之直接記憶體存取及自該資料匯流排提供直接記憶體存取。在一特定實施例中,該微電子元件358可具有一緩衝功能。此一微電子元件358可經組態以有助於提供該等微電子封裝100A、100B中之微電子元件130之各者相對於該微電子總成354或系統1500(圖19)外部之組件之阻抗隔離。 In an exemplary embodiment, the microelectronic assembly 354 can have a second microelectronic component 358 that can include a microelectronic package 100A configured to perform transfer to the assembly 354, At least some of the signals of 100B are buffered by one of the semiconductor wafers. In a particular embodiment, the second The microelectronic component can be configured to primarily perform one of a logic function, such as a solid state drive controller, and one or more of the microelectronic components 358 in the microelectronic packages 100A, 100B can each include, for example, a non-volatile flash Memory storage component of memory. In one example, the second microelectronic component 358 can include a memory storage component configured to self-supervise the transfer of data to the microelectronic component 130 and dissipate data from the memory storage component 130. A dedicated processor, such as one of the central processing units of system 1500 (Fig. 19). The microelectronic component 358 including a solid state drive controller can provide direct memory storage for a data bus on a motherboard such as one of the systems of the system 1500 (e.g., the circuit panel 1502 shown in FIG. 19). Access to the data bus provides direct memory access. In a particular embodiment, the microelectronic element 358 can have a buffering function. The microelectronic component 358 can be configured to facilitate providing components of the microelectronic component 130 of the microelectronic packages 100A, 100B relative to the microelectronic assembly 354 or external components of the system 1500 (FIG. 19). Impedance isolation.
在一特定實施例中,該微電子封裝之第一端子104可經組態以載送控制該微電子元件101之一操作模式之資訊。更具體言之,該等第一端子可經組態以載送傳送至該微電子封裝100之一組特定的命令信號及/或時脈信號之全部。在一實施例中,該等第一端子104可經組態以載送自一外部組件傳送至該微電子封裝100之命令信號、位址信號、儲存庫位址信號及時脈信號之全部,其中該等命令信號包含列位址選通、行位址選通及寫入啟用。在此實施例中,第一晶片可經組態以再產生控制該操作模式之資訊。或 者,或除此之外,該第一晶片可經組態以部分或完全解碼控制該微電子元件之操作模式之資訊。在此實施例中,每一第二晶片可或不一定經組態以全部解碼位址資訊、命令資訊或控制微電子元件之一操作模式之資訊之一或多者。 In a particular embodiment, the first terminal 104 of the microelectronic package can be configured to carry information that controls an operational mode of the microelectronic component 101. More specifically, the first terminals can be configured to carry all of the set of command signals and/or clock signals transmitted to the microelectronic package 100. In an embodiment, the first terminals 104 can be configured to carry all of the command signals, address signals, and reservoir address signals and pulse signals transmitted from an external component to the microelectronic package 100, wherein The command signals include column address strobe, row address strobe, and write enable. In this embodiment, the first wafer can be configured to regenerate information that controls the mode of operation. or Alternatively, or in addition, the first wafer can be configured to partially or fully decode information that controls the mode of operation of the microelectronic component. In this embodiment, each second wafer may or may not be configured to decode all of the address information, command information, or information that controls the mode of operation of one of the microelectronic components.
可提供其上具有其他端子配置之微電子封裝。例如,在圖8中圖解說明之微電子封裝400中,在基板表面之一中心區域112中安置端子之四行404A、404B、404C及404D,此等行含有經組態以載送該等命令信號、位址信號、儲存庫位址信號及用以取樣該等位址信號之時脈信號之全部之第一端子。在另一實例(未展示)中,一微電子封裝之第一端子亦可安置於三行內之位置處。 A microelectronic package with other terminal configurations can be provided. For example, in the microelectronic package 400 illustrated in Figure 8, four rows 404A, 404B, 404C, and 404D of terminals are disposed in a central region 112 of the substrate surface, the rows containing configurations configured to carry the commands a signal, an address signal, a reservoir address signal, and a first terminal for sampling all of the clock signals of the address signals. In another example (not shown), the first terminal of a microelectronic package can also be placed at three locations.
在圖9A及圖9B中圖解說明之微電子封裝500中,在安置於基板表面之中心區域512中之一單行505中之位置處安置第一端子504,該單行505在平行於該微電子封裝之邊緣516、518之一方向上延伸。雖然圖9A中展示第二端子,但是為清楚起見圖9B省略該等第二端子。 In the microelectronic package 500 illustrated in Figures 9A and 9B, a first terminal 504 is disposed at a location in a single row 505 disposed in a central region 512 of the substrate surface, the single row 505 being parallel to the microelectronic package The edges 516, 518 extend in one direction. Although the second terminals are shown in FIG. 9A, the second terminals are omitted for clarity in FIG. 9B.
在圖9A中展示之特定實例中,基板上之任何兩端子行之間之最小間距係安置於該基板表面之周邊區域514B中之第二端子之相鄰行506B與506C之間之間距552。該中心區域之寬度554不大於該等端子行506B與506C之間之最小間距552之三倍半。 In the particular example shown in Figure 9A, the minimum spacing between any two terminal rows on the substrate is disposed 552 between the adjacent rows 506B and 506C of the second terminals in the peripheral region 514B of the substrate surface. The width 554 of the central region is no more than three and a half times the minimum spacing 552 between the terminal rows 506B and 506C.
如圖9B中進一步所示,該微電子封裝500中之微電子元件530可在該微電子元件之面534上具有元件接觸件538之一單行。在此情況中,該微電子封裝500之元件接觸件538 與第一端子504之間之內部電連接可特別短。例如,在圖9C中展示之微電子封裝500中,元件接觸件538A與該等第一端子504之間之連接在一情況中可僅或主要在其中元件接觸件之行538A在該微電子元件530之面534上延伸之一第一方向542上延伸。在另一情況中,元件接觸件538B與該等第一端子504之間之連接在一情況中可僅在該等接觸件538B上之一垂直方向上延伸,使得該封裝500之至少一些第一端子504可至少部分覆疊電連接該等接觸件538B之元件接觸件538。 As further shown in FIG. 9B, the microelectronic component 530 in the microelectronic package 500 can have a single row of component contacts 538 on the face 534 of the microelectronic component. In this case, component contact 538 of the microelectronic package 500 The internal electrical connection with the first terminal 504 can be particularly short. For example, in the microelectronic package 500 shown in FIG. 9C, the connection between the component contact 538A and the first terminals 504 may in one case only or primarily be in the row 538A of the component contacts at the microelectronic component. One of the extensions 530 extends over the first direction 542. In another case, the connection between component contact 538B and the first terminals 504 may in one case extend only in one of the vertical directions of the contacts 538B such that at least some of the packages 500 are at least first Terminal 504 can at least partially overlap component contact 538 that electrically connects the contacts 538B.
圖10圖解說明根據其中微電子元件630包含複數個垂直堆疊電互連半導體晶片632及634之一特定實例之一微電子封裝600。在此情況中,該微電子元件630包含具有在其之一面638上面向曝露於基板之一第一表面610處之基板接觸件640且連結至該等基板接觸件640之元件接觸件636之一第一半導體晶片632。該微電子元件亦包含覆疊該第一半導體晶片632之與該第一半導體晶片之面638相對之一面642之一或多個第二半導體晶片634,該面642遠離該基板602之第一表面610。該一或多個第二半導體晶片634與該第一半導體晶片632電互連。例如,如圖10中所示,存在三個垂直堆疊第二半導體晶片634,其中其等之面彼此覆疊。 FIG. 10 illustrates a microelectronic package 600 in accordance with one particular example in which microelectronic element 630 includes one of a plurality of vertically stacked electrically interconnected semiconductor wafers 632 and 634. In this case, the microelectronic element 630 includes one of the component contacts 636 having a substrate contact 640 that faces one of the first surfaces 610 of the substrate on one of the faces 638 and that is coupled to the substrate contacts 640. First semiconductor wafer 632. The microelectronic component also includes one or a plurality of second semiconductor wafers 634 overlying one side 642 of the first semiconductor wafer 632 opposite the first semiconductor wafer face 638, the face 642 being away from the first surface of the substrate 602 610. The one or more second semiconductor wafers 634 are electrically interconnected with the first semiconductor wafer 632. For example, as shown in FIG. 10, there are three vertically stacked second semiconductor wafers 634 with their equal faces overlapping each other.
在圖10中展示之微電子封裝600中,該第一半導體晶片632及該第二半導體晶片634之各者可具有記憶體儲存陣列功能。在一實例中,該第一半導體晶片及該第二半導體晶 片之各者可經組態使得每一此半導體晶片具體實施更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能。例如,該第一半導體晶片及該第二半導體晶片之各者可包含一記憶體儲存陣列及輸入資料至該記憶體儲存陣列且自該記憶體儲存陣列輸出資料所需之全部電路。例如,當每一半導體晶片中之記憶體儲存陣列可寫入時,該等半導體晶片之各者可包含經組態以自該封裝之端子接收外部資料輸入之電路以及經組態以將來自此半導體晶片之資料輸出傳送至該封裝之端子之電路。因此,每一第一半導體晶片632及每一第二半導體晶片634可為一動態隨機存取記憶體(「DRAM」)晶片或能夠自此半導體晶片內之記憶體儲存陣列輸入及輸出資料並接收此資料及將此資料傳輸至該微電子封裝外部之一組件之其他記憶體晶片。在此情況中,換言之,無需藉由該微電子封裝內之一額外的半導體晶片緩衝至每一DRAM晶片或其他記憶體晶片內之記憶體儲存陣列之信號及來自該記憶體儲存陣列之信號。 In the microelectronic package 600 shown in FIG. 10, each of the first semiconductor wafer 632 and the second semiconductor wafer 634 can have a memory storage array function. In one example, the first semiconductor wafer and the second semiconductor crystal Each of the slices can be configured such that each of the semiconductor wafers implements more active devices to provide memory storage array functionality in addition to any other functionality. For example, each of the first semiconductor wafer and the second semiconductor wafer may include a memory storage array and all circuitry required to input data to and output data from the memory storage array. For example, when a memory storage array in each semiconductor wafer is writable, each of the semiconductor wafers can include circuitry configured to receive external data input from terminals of the package and configured to The data output of the semiconductor wafer is transferred to the circuitry of the terminals of the package. Therefore, each of the first semiconductor wafer 632 and each of the second semiconductor wafers 634 can be a dynamic random access memory ("DRAM") wafer or can input and output data from and receive from the memory storage array in the semiconductor wafer. This information and other data is transferred to other memory chips of one of the components external to the microelectronic package. In this case, in other words, there is no need to buffer the signals from the memory storage array in each DRAM wafer or other memory chip and the signals from the memory storage array by an additional semiconductor wafer in the microelectronic package.
或者,在另一實例中,該一或多個半導體晶片634可具體實施更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能,但是該第一半導體晶片632可為一種不同類型的晶片。在此情況中,該第一半導體晶片632可經組態(例如,設計、構造或建立)以緩衝信號,即,再產生接收於該等端子處之信號以傳送至該一或多個第二半導體晶片634,或再產生接收自該等第二半導體晶片634之一或多者之信號以傳送至該等端子,或再產生在以下兩個方向 上傳送之信號:自該等端子至該一或多個第二半導體晶片634;及自該一或多個半導體晶片至該微電子封裝之端子。 Alternatively, in another example, the one or more semiconductor wafers 634 can implement more active devices to provide memory storage array functionality in addition to any other functionality, but the first semiconductor wafer 632 can be a different type Wafer. In this case, the first semiconductor wafer 632 can be configured (eg, designed, constructed, or built) to buffer the signal, ie, regenerate signals received at the terminals for transmission to the one or more second Semiconductor wafer 634, or regenerating a signal received from one or more of said second semiconductor wafers 634 for transmission to the terminals, or regenerated in the following two directions Signals transmitted from the terminals to the one or more second semiconductor wafers 634; and from the one or more semiconductor wafers to the terminals of the microelectronic package.
或者,或除再產生如上所述之信號以外,在一實例中,此一複合微電子元件中之第一晶片可經組態以部分或完全解碼控制該微電子元件之操作模式之資訊。在一特定實例中,此複合微電子元件中之第一半導體晶片可經組態以部分或完全解碼接收於該等端子處(諸如該等第一端子處)之位址資訊或命令資訊之至少一者。該第一晶片可接著輸出此部分或完全解碼之結果以傳送至該一或多個第二半導體晶片634。 Alternatively, or in addition to generating a signal as described above, in an example, the first wafer in the composite microelectronic component can be configured to partially or fully decode information that controls the mode of operation of the microelectronic component. In a specific example, the first semiconductor wafer of the composite microelectronic component can be configured to partially or fully decode at least address information or command information received at the terminals (such as at the first terminals) One. The first wafer can then output the result of the partial or complete decoding for transmission to the one or more second semiconductor wafers 634.
在一特定實例中,該第一半導體晶片可經組態以緩衝該位址資訊,或在一實例中緩衝傳送至該一或多個第二半導體晶片之命令信號、位址信號及時脈信號。例如,該第一半導體晶片632可為具體實施更多個主動裝置以在傳送信號至其他裝置(例如,該一或多個第二半導體晶片634)中提供除任何其他功能以外的一緩衝功能之一緩衝器晶片。接著,可減小該一或多個第二半導體晶片之功能晶片,該等功能晶片具有記憶體儲存陣列但是可省略DRAM晶片共同的電路,諸如緩衝器電路、解碼器或預解碼器或字線驅動器等等。在該情況中,該第一晶片632可在堆疊中用作一「主」晶片且控制該等第二半導體晶片634之各者中之操作。在一特定實例中,該等第二半導體晶片可經組態使得其等不能執行該緩衝功能。在該情況中,該第一半導體晶 片及該第二半導體晶片之堆疊配置經組態使得該微電子封裝中所需之緩衝功能可藉由該第一半導體晶片執行,且無法藉由該堆疊配置中之第二半導體晶片之任一半導體晶片執行。 In a particular example, the first semiconductor wafer can be configured to buffer the address information or, in an example, buffer a command signal, an address signal, and a pulse signal transmitted to the one or more second semiconductor wafers. For example, the first semiconductor wafer 632 can be embodied with more active devices to provide a buffering function in addition to any other function in transmitting signals to other devices (eg, the one or more second semiconductor wafers 634). A buffer wafer. Next, the functional wafer of the one or more second semiconductor wafers may be reduced, the functional wafers having a memory storage array but omitting circuits common to the DRAM wafers, such as buffer circuits, decoders or pre-decoders or word lines Drive and more. In this case, the first wafer 632 can be used as a "master" wafer in the stack and control operations in each of the second semiconductor wafers 634. In a particular example, the second semiconductor wafers can be configured such that they are unable to perform the buffering function. In this case, the first semiconductor crystal The stacked configuration of the chip and the second semiconductor wafer is configured such that a buffer function required in the microelectronic package can be performed by the first semiconductor wafer and cannot be performed by any of the second semiconductor wafers in the stacked configuration The semiconductor wafer is executed.
在本文描述之實施例之任一實施例中,該一或多個第二半導體晶片可實施於以下技術之一或多者中:DRAM、NAND快閃記憶體、RRAM(「電阻式RAM」或「電阻式隨機存取記憶體」)、靜態隨機存取記憶體(SRAM)、相變記憶體(「PCM」)、磁性隨機存取記憶體,例如,諸如許多實施例穿隧接面裝置、自旋轉矩RAM或內容可定址記憶體等等。 In any of the embodiments described herein, the one or more second semiconductor wafers can be implemented in one or more of the following technologies: DRAM, NAND flash memory, RRAM ("resistive RAM" or "Resistive random access memory"), static random access memory (SRAM), phase change memory ("PCM"), magnetic random access memory, such as, for example, many embodiments of tunneling junction devices, Self-rotating moment RAM or content addressable memory, etc.
圖10進一步圖解說明根據其中該一或多個第二半導體晶片634藉由該第一半導體晶片632在其之第一相對面638與第二相對面642之間之一厚度652之一方向上延伸之穿矽通孔(「TSV」)650與該第一半導體晶片632電連接之一特定實例之一微電子封裝600。如圖10中所示,在一實例中,該等TSV 650可藉由(諸如)沿該第一半導體晶片632之一面638延伸之跡線654與該第一半導體晶片632之元件接觸件636電連接。雖然可以此方式在該第一半導體晶片與該第二半導體晶片之間進行任何電連接,但是此等連接亦充分適用於將電源及接地分佈至該第一半導體晶片及該第二半導體晶片。 10 further illustrates that the one or more second semiconductor wafers 634 extend in the direction of one of the thicknesses 652 between the first opposing face 638 and the second opposing face 642 thereof by the first semiconductor wafer 632. A through-via via ("TSV") 650 is electrically coupled to the first semiconductor wafer 632 by one of the specific examples of the microelectronic package 600. As shown in FIG. 10, in an example, the TSVs 650 can be electrically coupled to the component contacts 636 of the first semiconductor wafer 632 by, for example, a trace 654 extending along a face 638 of the first semiconductor wafer 632. connection. Although any electrical connection can be made between the first semiconductor wafer and the second semiconductor wafer in this manner, the connections are also sufficiently suitable for distributing power and ground to the first semiconductor wafer and the second semiconductor wafer.
例如,可透過連接至內部電路之TSV路由藉由操作為一緩衝器元件之一第一半導體晶片632再產生且接著傳送至 該一或多個第二半導體晶片之信號。如圖10中進一步所示,該微電子封裝亦可包含部分或完全延伸穿過該等第二半導體晶片634之一或多者之穿矽通孔650。TSV 650不一定直接連接至該基板602,而是可終止於包含於半導體晶片632中之電路上。 For example, the TSV route connected to the internal circuit can be regenerated by the first semiconductor wafer 632 operating as one of the buffer elements and then transmitted to A signal of the one or more second semiconductor wafers. As further shown in FIG. 10, the microelectronic package can also include a through via 650 that extends partially or completely through one or more of the second semiconductor wafers 634. The TSV 650 is not necessarily directly connected to the substrate 602, but may terminate on circuitry included in the semiconductor wafer 632.
圖11A進一步圖解說明根據圖10中所示之實施例之一變化形式之微電子封裝700。在此情況中,第一半導體晶片732以與上文關於圖10描述之方式相同之方式與基板702互連。然而,一或多個第二半導體晶片734係透過引線接合與該第一半導體晶片732電互連。 FIG. 11A further illustrates a microelectronic package 700 in accordance with a variation of the embodiment shown in FIG. In this case, the first semiconductor wafer 732 is interconnected with the substrate 702 in the same manner as described above with respect to FIG. However, one or more second semiconductor wafers 734 are electrically interconnected to the first semiconductor wafer 732 by wire bonding.
在圖11A中展示之實例中,該等第二半導體晶片734經放置使得上面其等之正面及接觸件731面向上,即,背向該第一半導體晶片732。然而,在圖11B中所示之另一變化形式中,第一半導體晶片832及第二半導體晶片834可一起安裝在微電子封裝中之另一方式係放置該等第二半導體晶片834之各者使得其等之正面及接觸件831面向下,即,朝向該基板602。以該方式,該等接觸件831可透過引線接合836電連接至該第一半導體晶片832之正面838上之對應的接觸件841。在此情況中,該等接觸件841可藉由(諸如)沿該第一半導體晶片832之正面838延伸之跡線838電連接至該第一半導體晶片832上之元件接觸件636,其中該等元件接觸件636與該等基板接觸件640之間之連接如上文關於圖10描述。 In the example shown in FIG. 11A, the second semiconductor wafers 734 are placed such that their front faces and contacts 731 face up, i.e., face away from the first semiconductor wafer 732. However, in another variation shown in FIG. 11B, another way in which the first semiconductor wafer 832 and the second semiconductor wafer 834 can be mounted together in a microelectronic package is to place each of the second semiconductor wafers 834. The front side and the contact member 831 are faced downward, that is, toward the substrate 602. In this manner, the contacts 831 can be electrically connected to the corresponding contacts 841 on the front side 838 of the first semiconductor wafer 832 via wire bonds 836. In this case, the contacts 841 can be electrically coupled to the component contacts 636 on the first semiconductor wafer 832 by, for example, traces 838 extending along the front side 838 of the first semiconductor wafer 832, where The connection between component contact 636 and the substrate contacts 640 is as described above with respect to FIG.
圖12圖解說明根據上文關於圖10描述之實施例之一進一 步變化形式之一微電子封裝,其中一或多個第二半導體晶片934及第一半導體晶片932之接觸件之間之連接可包含沿微電子元件930之一或多個邊緣(即,沿該微電子元件內之半導體晶片932、934之邊緣)延伸之跡線936。該等半導體晶片932、934之間之電連接可進一步包含分別沿該第一半導體晶片932及該第二半導體晶片934之正面延伸之跡線938、940。如圖12中進一步所示,該等第二半導體晶片之正面942可面向上遠離該基板602或面向下朝向該基板602。再者,如上述結構(圖10至圖11A)中,該第一半導體晶片932內之TSV可部分或完整地延伸穿過該第一半導體晶片932之一厚度,或該第一半導體晶片932中之TSV之一些可部分延伸穿過其厚度,同時該等TSV之其他TSV可完全地延伸穿過該第一半導體晶片932之厚度。 Figure 12 illustrates one of the embodiments described above with respect to Figure 10 One of the step variations of a microelectronic package in which the connection between the contacts of the one or more second semiconductor wafers 934 and the first semiconductor wafer 932 can include one or more edges along the microelectronic element 930 (ie, along the A trace 936 extending from the edge of the semiconductor wafer 932, 934 within the microelectronic component. The electrical connections between the semiconductor wafers 932, 934 can further include traces 938, 940 extending along the front side of the first semiconductor wafer 932 and the second semiconductor wafer 934, respectively. As further shown in FIG. 12, the front side 942 of the second semiconductor wafer can face upwardly away from the substrate 602 or face down toward the substrate 602. Furthermore, as in the above structure (FIGS. 10 to 11A), the TSV in the first semiconductor wafer 932 may extend partially or completely through one of the thicknesses of the first semiconductor wafer 932 or in the first semiconductor wafer 932. Some of the TSVs may extend partially through their thickness while other TSVs of the TSVs may extend completely through the thickness of the first semiconductor wafer 932.
圖13A圖解說明根據上文關於圖10描述之實施例之又另一變化形式之一微電子封裝,其中一第二半導體晶片954具有面向第一半導體晶片952之一面950上之對應的接觸件948之接觸件946,該等接觸件946、948(諸如)透過一金屬、接合金屬或其他導電材料連結在一起以在該第一半導體晶片952與該第二半導體晶片954之間形成一覆晶連接。 FIG. 13A illustrates a microelectronic package in accordance with yet another variation of the embodiment described above with respect to FIG. 10, wherein a second semiconductor wafer 954 has a corresponding contact 948 that faces a face 950 of the first semiconductor wafer 952. Contact 946, such as contacts 946, 948, for example, joined together by a metal, bonding metal or other conductive material to form a flip chip connection between the first semiconductor wafer 952 and the second semiconductor wafer 954 .
圖13B圖解說明圖13A中展示之微電子封裝之一變化形式。不同於圖13A中展示之封裝,可經組態以再產生或至少部分解碼位址資訊或其他資訊(例如,再產生信號以傳送至該封裝中之其他半導體晶片)之半導體晶片964並非定位為鄰近該基板902之第一表面108。在此情況中,該半導 體晶片964而是可安置在該封裝內覆疊一或多個其他半導體晶片之一位置處。例如,如圖13B中所示,該晶片964至少部分覆疊經安置與該基板902之第一表面108相鄰之半導體晶片962且至少部分覆疊安置於半導體晶片962頂部之半導體晶片963A及963B或至少部分覆疊半導體晶片962。 Figure 13B illustrates a variation of the microelectronic package shown in Figure 13A. Unlike the package shown in FIG. 13A, the semiconductor wafer 964 that can be configured to reproduce or at least partially decode address information or other information (eg, regenerate signals for transmission to other semiconductor wafers in the package) is not positioned as Adjacent to the first surface 108 of the substrate 902. In this case, the semi-guide The bulk wafer 964 can instead be disposed at a location within the package that overlies one or more other semiconductor wafers. For example, as shown in FIG. 13B, the wafer 964 at least partially overlaps the semiconductor wafer 962 disposed adjacent the first surface 108 of the substrate 902 and at least partially overlies the semiconductor wafers 963A and 963B disposed on top of the semiconductor wafer 962. Or at least partially overlying the semiconductor wafer 962.
在一實例中,該等半導體晶片962、963A及963B可包含記憶體儲存陣列。如上文描述之實例中,此等晶片962、963A及963B可各自併有經組態以緩衝(例如,暫時地儲存)寫入至此晶片之資料或自此晶片讀取之資料或該二者之電路。或者,該等晶片962、963A及963B在功能方面可能更加有限,且可能需要與經組態以暫時地儲存寫入至此晶片之資料或自此晶片讀取之資料或該二者之至少一其他晶片一起使用。 In one example, the semiconductor wafers 962, 963A, and 963B can comprise a memory storage array. In the examples described above, the wafers 962, 963A, and 963B can each be configured to buffer (eg, temporarily store) data written to or read from the wafer or both. Circuit. Alternatively, the wafers 962, 963A, and 963B may be more limited in functionality and may be required to be configured to temporarily store data written to or read from the wafer or at least one other of the two. The wafers are used together.
該半導體晶片964可透過導電結構(例如,連接至曝露於該基板902之第一表面108處之接觸件之TSV 972a及972b(統稱為TSV 972))電連接至該微電子封裝之端子(例如,連接至其中安置該等第一端子904及該等第二端子906之柵格)。該導電結構(例如,該等TSV 972)可透過該晶片964上之接觸件938且透過沿該晶片964之面943或沿該晶片963A之一對立面931或沿該等晶片963A、964之二者之面931、943延伸之導體(未展示)電連接至該半導體晶片964。如上指示,該半導體晶片964可經組態以再產生或至少部分解碼透過該導電結構(例如,諸如TSV 972a及972b之TSV 972)接收之信號或資訊,且其可經組態以將再產生或至少 部分解碼之信號或資訊傳送至該封裝內之其他晶片,諸如傳送至該等晶片962、963A及963B。 The semiconductor wafer 964 can be electrically connected to the terminals of the microelectronic package via a conductive structure (eg, TSVs 972a and 972b (collectively referred to as TSV 972) that are connected to contacts exposed at the first surface 108 of the substrate 902) (eg, Connected to the grid in which the first terminals 904 and the second terminals 906 are disposed). The conductive structures (e.g., the TSVs 972) can pass through the contacts 938 on the wafer 964 and pass through the face 943 along the wafer 964 or along one of the opposing faces 931 of the wafer 963A or along the wafers 963A, 964 A conductor (not shown) extending over the faces 931, 943 is electrically coupled to the semiconductor wafer 964. As indicated above, the semiconductor wafer 964 can be configured to regenerate or at least partially decode signals or information received through the conductive structures (e.g., TSVs 972 such as TSVs 972a and 972b), and can be configured to be regenerated Or at least The partially decoded signals or information are transmitted to other wafers within the package, such as to the wafers 962, 963A, and 963B.
如圖13B中進一步所示,該等半導體晶片962、963A及963B可藉由可延伸穿過此等晶片之一個、兩個或三個或三個以上的複數個穿矽通孔(「TSV」)972、974及976電連接至該半導體晶片964且彼此電連接。每一此TSV可與該封裝內之佈線(例如,該等半導體晶片962、963A、963B及964之兩個或兩個以上的導電襯墊或跡線)電連接。在一特定實例中,信號或資訊可沿一第一子組TSV 972A自該基板902傳送至該晶片964,且信號或資訊可沿一第二子組TSV 972B自該晶片964傳送至該基板。在一實施例中,該等TSV 972之至少一部分可經組態以取決於特定的信號或資訊在該晶片964與該基板902之間之任一方向上傳送信號或資訊。在一實例(未展示)中,即使每一穿矽通孔不一定透過其延伸穿過之每一此半導體晶片電連接,穿矽通孔亦可延伸穿過全部半導體晶片962、963A及963B之厚度。 As further shown in FIG. 13B, the semiconductor wafers 962, 963A, and 963B can be extended through one, two, or three or more of a plurality of through-holes ("TSV") of the wafers. 972, 974, and 976 are electrically connected to the semiconductor wafer 964 and electrically connected to each other. Each of the TSVs can be electrically coupled to wiring within the package (eg, two or more conductive pads or traces of the semiconductor wafers 962, 963A, 963B, and 964). In a particular example, signals or information can be transmitted from the substrate 902 to the wafer 964 along a first subset TSV 972A, and signals or information can be transmitted from the wafer 964 to the substrate along a second subset TSV 972B. In an embodiment, at least a portion of the TSVs 972 can be configured to transmit signals or information in either direction between the wafer 964 and the substrate 902 depending on the particular signal or information. In an example (not shown), the through vias may extend through all of the semiconductor wafers 962, 963A, and 963B, even though each of the through vias does not necessarily electrically connect through each of the semiconductor wafers through which they extend. thickness.
如圖13B中進一步所示,可包含複數個翼板971之一散熱片或散熱器968可(諸如)透過諸如熱黏著劑、導熱動物脂或焊料等等之一導熱材料969熱耦合至該半導體晶片964之一面(例如,該半導體晶片964之一背面933)。 As further shown in FIG. 13B, a heat sink or heat sink 968, which may include a plurality of fins 971, may be thermally coupled to the semiconductor, such as through a thermally conductive material 969 such as a thermal adhesive, thermally conductive tallow or solder. One side of the wafer 964 (eg, one back 933 of the semiconductor wafer 964).
圖13B中展示之微電子總成995可經組態以操作為一記憶體模組,該記憶體模組能夠透過該基板上針對該記憶體模組提供之第一端子及第二端子每個循環傳送指定數目個資料位元至該微電子封裝上或自該微電子封裝傳送該等資料 位元。例如,該微電子總成可經組態以將若干資料位元(諸如32個資料位元、64個資料位元或96個資料位元等等可能的組態)傳送至諸如可與該等第一端子904及該等第二端子906電連接之一電路面板之一外部組件或自該外部組件傳送該等資料位元。在另一實例中,當傳送至該封裝及自該封裝傳送之位元包含錯誤校正碼位元時,每個循環傳送至該封裝或自該封裝傳送之位元數目可為一不同數目,諸如(例如)36個位元、72個位元或108個位元。除此處具體描述之資料寬度以外的其他資料寬度係可能的。 The microelectronic assembly 995 shown in FIG. 13B can be configured to operate as a memory module, the memory module being capable of transmitting a first terminal and a second terminal for the memory module on the substrate. Recurringly transmitting a specified number of data bits to or from the microelectronic package Bit. For example, the microelectronic assembly can be configured to transfer a number of data bits (such as 32 data bits, 64 data bits, or 96 data bits, etc.) to, for example, such The first terminal 904 and the second terminals 906 are electrically connected to or from one of the external components of the circuit panel. In another example, when the bit transferred to and from the package contains error correction code bits, the number of bits transferred to or from the package per cycle may be a different number, such as (for example) 36 bits, 72 bits or 108 bits. Other data widths than those specifically described herein are possible.
圖14、圖15A及圖15B圖解說明根據上述實施例之一或多者之一進一步變化形式之一微電子封裝1100。如圖14中所示,該封裝1100包含第一微電子元件1130及第二微電子元件1131,其等各自具有面向並連結至基板1102之一第一表面1120上之對應的基板接觸件1140之接觸件1138。繼而,該等基板接觸件1140之一些透過(諸如)導電跡線1144與第二表面1110之一中心區域1112中之第一端子1142電連接。在一些實施例中,該等基板接觸件1138之一些而是可與該第二表面之一或多個周邊區域1164中之第二端子1162電連接。 14, 15A and 15B illustrate a microelectronic package 1100 in accordance with a further variation of one or more of the above-described embodiments. As shown in FIG. 14, the package 1100 includes a first microelectronic component 1130 and a second microelectronic component 1131, each having a corresponding substrate contact 1140 that faces and is coupled to a first surface 1120 of the substrate 1102. Contact 1138. Then, some of the substrate contacts 1140 are electrically coupled to the first terminal 1142 in a central region 1112 of the second surface 1110 through, for example, conductive traces 1144. In some embodiments, some of the substrate contacts 1138 can be electrically coupled to the second terminal 1162 of one or more of the peripheral regions 1164 of the second surface.
此實施例及其他實施例併有其中如上文描述之一個以上的微電子元件。一多晶片封裝可減小將其中的晶片連接至一電路面板(例如,該封裝可透過諸如一球柵陣列、平台柵格陣列、接腳柵格陣列等等之一端子陣列電連接及機械連接之印刷佈線板)所需的面積或空間量。此連接空間在 小型或可攜式計算裝置(例如,諸如通常將個人電腦之功能與無線連接性結合至更廣泛的範圍之「智慧型電話」或桌上型電腦之手持式裝置)中尤為有限。多晶片封裝可尤其有用於製造可用於一系統之大量相對便宜的記憶體,諸如(例如)先進型高效能動態隨機存取記憶體(「DRAM」)晶片(例如,DDR3型DRAM晶片及其下一代中)。 This and other embodiments have more than one microelectronic component as described above. A multi-chip package can reduce the connection of a wafer therein to a circuit panel (eg, the package can be electrically and mechanically connected through a terminal array such as a ball grid array, a platform grid array, a pin grid array, etc.) The amount of area or space required for the printed wiring board. This connection space is Small or portable computing devices (eg, such as "smart phones" or handheld devices that typically combine the functionality and wireless connectivity of a personal computer into a wider range of applications) are particularly limited. Multi-chip packages are particularly useful for fabricating a large number of relatively inexpensive memories that can be used in a system, such as, for example, advanced high performance dynamic random access memory ("DRAM") chips (eg, DDR3 DRAM chips and their next generation). in).
在特定情況中,將該多晶片封裝連接至電路面板所需之電路面板之面積量可藉由在該封裝上提供共同端子而減小,透過該等共同端子至少一些信號在途中行進至該封裝內之兩個或兩個以上晶片或自該兩個或兩個以上晶片行進。因此,在圖14及圖15A至圖15B中圖解說明之實例中,該封裝內之多個晶片之對應的接觸件可與該封裝之一單個共同端子電連接,該共同端子經組態以與該封裝外部之一組件(諸如一電路面板(例如,印刷電路板、外部微電子元件或其他組件))電連接。 In certain instances, the amount of area of the circuit panel required to connect the multi-chip package to the circuit panel can be reduced by providing a common terminal on the package through which at least some of the signals travel to the package Two or more wafers within or travel from the two or more wafers. Thus, in the example illustrated in Figures 14 and 15A-15B, corresponding contacts of a plurality of wafers within the package can be electrically coupled to a single common terminal of the package, the common terminal being configured to One of the components external to the package, such as a circuit panel (eg, a printed circuit board, external microelectronic component, or other component), is electrically coupled.
如在上述實施例中,該基板表面1110之中心區域1112具有一寬度1154,該寬度1154不大於該封裝上之任何兩相鄰端子行1142之間之一最小間距1152之三倍半,其中該兩相鄰行之各者在其中具有複數個端子。 As in the above embodiment, the central region 1112 of the substrate surface 1110 has a width 1154 that is no more than three and a half times the minimum pitch 1152 between any two adjacent terminal rows 1142 on the package, wherein Each of the two adjacent rows has a plurality of terminals therein.
在正交於該等微電子元件之面之一方向上延伸之一軸平面1150在其中含有複數個元件接觸件之每一行延伸且在第一微電子元件1130及第二微電子元件1131之元件接觸件之全部行1138中居中之相同的第一方向上延伸。該軸平面在法向於該表面1110之一方向上與該基板之中心區域相交 (延伸穿過該中心區域)。在一實例中,該軸平面可沿在該等微電子元件1130、1131之相鄰邊緣1134、1135之間居中之一線與該基板相交。參考圖15A及圖15B,第一端子1142之一行或多行可安置在該中心區域與該封裝在如其中所示之第一微電子元件及第二微電子元件之相鄰邊緣1134、1135之間之一區域對齊之一部分中,或雖然未展示,但是該等第一端子之行1142之一或多者可覆疊該第一微電子元件1130及該第二微電子元件1131之面1136之一或多者。如在上述實施例中,該中心區域中無需存在一單行端子1142。通常,該中心區域中將存在不超過四行端子1142。如圖14中進一步所示,該第一微電子元件及該第二微電子元件之面1136可在平行於該基板1102之第一表面1120之一單平面1146內延伸。 One of the axial planes 1150 extending in a direction orthogonal to one of the faces of the microelectronic elements extends in each row of the plurality of component contacts and the component contacts of the first microelectronic component 1130 and the second microelectronic component 1131 All of the rows 1138 extend in the same first direction that is centered. The axial plane intersects the central region of the substrate in a direction normal to one of the surfaces 1110 (extends through the central area). In one example, the axial plane can intersect the substrate along a line centered between adjacent edges 1134, 1135 of the microelectronic elements 1130, 1131. Referring to FIGS. 15A and 15B, one or more rows of the first terminals 1142 can be disposed in the central region and the adjacent edges 1134, 1135 of the first microelectronic component and the second microelectronic component as shown therein. In one of the regions aligned, or although not shown, one or more of the rows 1142 of the first terminals may overlap the first microelectronic component 1130 and the face 1136 of the second microelectronic component 1131. One or more. As in the above embodiment, there is no need to have a single row of terminals 1142 in the central region. Typically, there will be no more than four rows of terminals 1142 in the central region. As further shown in FIG. 14, the first microelectronic component and the second microelectronic component face 1136 can extend within a single plane 1146 that is parallel to the first surface 1120 of the substrate 1102.
圖16A至圖16B圖解說明根據圖14、圖15A至圖15B中所示之實施例之一變化形式之一微電子封裝1200,除具有如上文關於微電子封裝1100(圖14、圖15A至圖15B)論述之封裝1200內之相同配置及電互連之第一微電子元件1230及第二微電子元件1231以外,該微電子封裝1200進一步包含第三微電子元件1233及第四微電子元件1235。該第三微電子元件及該第四微電子元件可各自具體實施更多個主動裝置以提供除任何其他功能以外的記憶體儲存陣列功能。如該第一微電子元件及該第二微電子元件,該第三微電子元件1233及該第四微電子元件1235透過面向並以(諸如)前述參考圖15A描述之覆晶方式連結至該基板之一第一表面 1120(圖14)上之對應的基板接觸件之元件接觸件1238與該封裝之端子1242電互連。 16A-16B illustrate a microelectronic package 1200 in accordance with one variation of the embodiment illustrated in FIGS. 14, 15A-15B, except having microelectronic package 1100 as described above (FIG. 14, FIG. 15A to FIG. 15B) In addition to the first configuration and electrical interconnection of the first microelectronic component 1230 and the second microelectronic component 1231 in the package 1200, the microelectronic package 1200 further includes a third microelectronic component 1233 and a fourth microelectronic component 1235. . The third microelectronic component and the fourth microelectronic component can each implement more active devices to provide memory storage array functionality in addition to any other functionality. For example, the first microelectronic component and the second microelectronic component, the third microelectronic component 1233 and the fourth microelectronic component 1235 are coupled to the substrate and are flip-chip bonded to the substrate, such as described above with reference to FIG. 15A. One of the first surfaces The component contacts 1238 of the corresponding substrate contacts on 1120 (FIG. 14) are electrically interconnected with the terminals 1242 of the package.
如上所述,該微電子封裝之第一端子1243可安置在一中心區域1254中具有不大於若干端子行之間之最小間距之三倍半之行1242內。如圖16A中進一步所示,軸平面1250可平行於該第一微電子元件、該第二微電子元件、該第三微電子元件及該第四微電子元件在該封裝1200內之面1236上之元件接觸件之全部行1238且在全部該等行1238中居中。在如圖16A中所示之實例中,軸平面1250在平行於其中含有第一端子之行1242延伸之一方向之一第一方向上延伸。 As noted above, the first terminal 1243 of the microelectronic package can be disposed within a central region 1254 having a line that is no more than three and a half times the minimum pitch between the plurality of terminal rows. As further shown in FIG. 16A, the axis plane 1250 can be parallel to the first microelectronic component, the second microelectronic component, the third microelectronic component, and the fourth microelectronic component on the face 1236 of the package 1200. All rows 1238 of the component contacts are centered in all of the rows 1238. In the example shown in FIG. 16A, the axial plane 1250 extends in a first direction parallel to one of the directions in which the row 1242 in which the first terminal is extended extends.
以類似於上文關於圖14、圖15A至圖15B描述之方式,可在該封裝1200內配置該等微電子元件1230、1231、1233及1235之面1236使得該等面1236之全部共面,即,在一單平面(即,諸如如圖14中圖解說明之一單平面1146)內延伸。 In a manner similar to that described above with respect to FIG. 14 and FIG. 15A through FIG. 15B, the faces 1236 of the microelectronic components 1230, 1231, 1233, and 1235 may be disposed within the package 1200 such that all of the faces 1236 are coplanar, That is, it extends in a single plane (i.e., such as a single plane 1146 as illustrated in Figure 14).
圖16B圖解說明該封裝1200上之端子一可能的信號指派,在該封裝1200中第一端子安置在該中心區域中之一行或多行1242內且第二端子1244安置在多個區域內靠近該封裝之周邊邊緣1260、1261、1262及1263之位置處。在此情況中,一些第二端子可安置在諸如柵格1270之一柵格內之位置處,且一些第二端子可安置在諸如柵格1272之一柵格內之位置處。此外,一些第二端子可安置在諸如柵格1274之一柵格內之位置處,且一些第二端子可安置在一柵格1276內之位置處。 16B illustrates a possible signal assignment for a terminal on the package 1200 in which a first terminal is disposed in one or more rows 1242 of the central region and a second terminal 1244 is disposed in a plurality of regions proximate to the The locations of the peripheral edges 1260, 1261, 1262, and 1263 of the package. In this case, some of the second terminals may be disposed at locations such as within one of the grids of grids 1270, and some of the second terminals may be disposed at locations such as within one of the grids of grids 1272. Additionally, some of the second terminals may be disposed at locations within a grid such as grid 1274, and some of the second terminals may be disposed at a location within grid 1276.
又,如圖16B中所示,柵格1274中之第二端子之信號類別指派可關於垂直軸1250對稱,且柵格1276中之第二端子之信號類別指派可關於該垂直軸1250對稱。如本文使用,若兩個信號類別指派在相同的指派類別中,即使數字索引在該類別內,該等信號類別指派亦可相對於彼此對稱。例示性信號類別指派可包含資料信號、資料選通信號、資料選通互補信號及資料掩碼信號。在一特定的實例中,在柵格1274中,即使具有信號指派DQSH#及DQSL#之第二端子具有不同的信號指派,該等第二端子亦關於該垂直軸1250相對於其等信號類別指派(其係資料選通互補)對稱。 Again, as shown in FIG. 16B, the signal class assignment of the second terminal in grid 1274 can be symmetric about vertical axis 1250, and the signal class assignment of the second terminal in grid 1276 can be symmetric about the vertical axis 1250. As used herein, if two signal classes are assigned in the same assigned class, even if the digital index is within the class, the signal class assignments may be symmetric with respect to each other. An exemplary signal class assignment can include a data signal, a data strobe signal, a data strobe complementary signal, and a data mask signal. In a particular example, in grid 1274, even if the second terminals having signal assignments DQSH# and DQSL# have different signal assignments, the second terminals are assigned with respect to the signal class of the vertical axis 1250. (It is complementary to the data strobe) symmetry.
如圖16B中進一步所示,資料信號至微電子封裝上之第二端子之空間位置之指派(諸如針對(例如)資料信號DQ0、DQ1、...)可關於該垂直軸1250具有模X對稱。該模X對稱可有助於保持諸如圖7C及圖7D中所示之一總成300或354中之信號完整性,在圖7C及圖7D中,一對或多對第一及第二封裝彼此相對安裝至一電路面板,且該電路面板電連接每一相對安裝之封裝對中之該等第一及第二封裝之若干對對應的第二端子。當端子之信號指派具有關於一軸之「模X對稱」時,載送具有相同值「模X」之信號之端子安置在關於該軸對稱之位置處。因此,在諸如圖7C、圖7D中之此總成300或354中,模X對稱可允許透過該電路面板進行電連接使得一第一封裝之一端子DQ0可透過該電路面板電連接至具有相同值的模X(在此情況中X係8)之第二封裝之一端子DQ8,使得可在基本上直立穿過(即,法向 於)該電路面板之厚度之一方向上進行該連接。 As further shown in FIG. 16B, the assignment of the data signal to the spatial position of the second terminal on the microelectronic package (such as for, for example, data signals DQ0, DQ1, ...) may have modulo X symmetry about the vertical axis 1250. . The modulo X symmetry can help maintain signal integrity in one of the assemblies 300 or 354, such as shown in Figures 7C and 7D, in Figures 7C and 7D, one or more pairs of first and second packages Mounted to a circuit panel opposite each other, and the circuit panel is electrically coupled to pairs of corresponding second terminals of the first and second packages of each of the oppositely mounted package pairs. When the signal assignment of the terminal has "mode X symmetry" with respect to one axis, the terminal carrying the signal having the same value "modulo X" is placed at a position symmetrical about the axis. Thus, in such assembly 300 or 354, such as in Figures 7C, 7D, modulo X symmetry may allow electrical connection through the circuit panel such that one of the terminals of the first package DQ0 is electrically connected to the same through the circuit panel a terminal DQ8 of the second package of the value modulo X (in this case X-series 8) so that it can be substantially erected (ie, normal The connection is made in one of the thicknesses of the circuit panel.
在一實例中,「X」可為一值2n(2的n次冪),其中n大於或等於2,或X可為8×N,N係2或更大。因此,在一實例中,X可等於一半位元組(4個位元)、位元組(8個位元)、多個位元組(8×N,N係2或更大)、一字組(32個位元)或多個字組之位元數目。以此方式,在一實例中,當存在如圖16B中所示之模8對稱時,柵格1274中經組態以載送資料信號DQ0之一封裝端子DQ0之信號指派係關於該垂直軸1250與經組態以載送資料信號DQ8之另一封裝端子DQ8之信號指派模8對稱。此外,同樣適用於柵格1276中之封裝端子DQ0及DQ8之信號指派。如圖16B中進一步所示,該柵格1274中之封裝端子DQ2及DQ10之信號指派具有關於該垂直軸之模8對稱,且同樣亦適用於柵格1276中之封裝端子。可在柵格1274、1276中可見相對於封裝端子DQ0至DQ15之信號指派之各者之諸如本文描述之模8對稱。 In an example, "X" can be a value of 2 n (n power of 2), where n is greater than or equal to 2, or X can be 8 x N, N is 2 or greater. Thus, in one example, X can be equal to half a byte (4 bits), a byte (8 bits), multiple bytes (8 x N, N series 2 or greater), one The number of bits in a block (32 bits) or multiple blocks. In this manner, in one example, when there is modulo 8 symmetry as shown in FIG. 16B, the signal assignment in the grid 1274 configured to carry one of the packaged data signals DQ0 to package the terminal DQ0 is related to the vertical axis 1250. The signal assignment modulo 8 is symmetric with the other package terminal DQ8 configured to carry the data signal DQ8. In addition, the same applies to the signal assignment of the package terminals DQ0 and DQ8 in the grid 1276. As further shown in FIG. 16B, the signal assignments of package terminals DQ2 and DQ10 in the grid 1274 have symmetry about the mode 8 of the vertical axis, and are equally applicable to package terminals in grid 1276. The modulo 8 symmetry, such as described herein, can be seen in the grids 1274, 1276 with respect to each of the signal assignments of the package terminals DQ0 through DQ15.
重要的是應注意到,雖然未展示,但是該模數「X」可為除2n(2的n次冪)以外的一值且可為大於2之任何值。因此,基於其之對稱之模數X可取決於構造或組態該封裝之一資料大小中存在多少位元。例如,當該資料大小係10個位元而非8個位元時,該等信號指派可具有模10對稱。甚至當該資料大小具有偶數個位元時,該模數X可具有此值。 It is important to note that although not shown, the modulus "X" can be a value other than 2 n (n power of 2) and can be any value greater than two. Therefore, the modulo X based on its symmetry may depend on how many bits are present in the data size of one of the packages constructed or configured. For example, when the data size is 10 bits instead of 8 bits, the signal assignments may have modulo 10 symmetry. The modulus X may have this value even when the data size has an even number of bits.
圖17A至圖17B圖解說明根據上文關於圖16A及圖16B描述之實施例1200之一變化形式之一微電子封裝1300,該封 裝1300具有具備其中安置含有第一端子之行1341之一中心區域1312之一基板表面1310。如其中所示,第一微電子元件1330及第二微電子元件1331以類似於微電子封裝1100(圖14、圖15A至圖15B)之微電子元件1130、1131之配置之一方式配置在基板1302上,其中此等微電子元件上之元件接觸件安置於在相同的第一方向1342上延伸之行1338內之位置處。然而,如圖17A中所示,第三微電子元件1332及第四微電子元件1333具有安置在行1340內之位置處之元件接觸件,該等行1340在橫向於該第一方向1342之另一方向1344上沿該等微電子元件1332、1333之面延伸。通常,該另一方向1344垂直於該第一方向1342。 17A-17B illustrate a microelectronic package 1300 in accordance with one variation of the embodiment 1200 described above with respect to FIGS. 16A and 16B, the seal The package 1300 has a substrate surface 1310 having a central region 1312 in which a row 1341 containing a first terminal is disposed. As shown therein, the first microelectronic component 1330 and the second microelectronic component 1331 are disposed on the substrate in a manner similar to the configuration of the microelectronic components 1130, 1131 of the microelectronic package 1100 (FIGS. 14, 15A-15B). At 1302, the component contacts on the microelectronic components are disposed at locations within the row 1338 that extend in the same first direction 1342. However, as shown in FIG. 17A, the third microelectronic element 1332 and the fourth microelectronic element 1333 have component contacts disposed at locations within the row 1340, the rows 1340 being transverse to the first direction 1342. A direction 1344 extends along the faces of the microelectronic elements 1332, 1333. Typically, the other direction 1344 is perpendicular to the first direction 1342.
如圖17A至圖17B中進一步所示,該等微電子元件1330、1331、1332及1333之各者通常具有在與各自的微電子元件上之該一行或多行接觸件相同之方向上延伸之兩個第一平行邊緣1360及在橫向於其中該等第一邊緣延伸之方向之一方向上延伸之兩個第二平行邊緣1362。在一些情況中,一各自的微電子元件之第一邊緣1360可具有大於此微電子元件之第二邊緣1362之長度。然而,在其他情況中,該等第二邊緣1362可具有大於該等第一邊緣1360之長度。在圖17A中所示之特定封裝中,含有該等微電子元件1330、1331、1332或1333之至少一者之任一第一邊緣1360且法向於此微電子元件之面之一平面1370與該封裝1300內之另一微電子元件之邊緣1360相交。如圖17A中所示,含有微電子元件1333之邊緣1360之軸平面1370在方向1344上 延伸且與該封裝內之微電子元件1330之邊緣1360相交。在圖17A中展示之實例中,該平面1370僅與該封裝內之一其他微電子元件之邊緣1360相交。該等微電子元件可經配置使得含有該等微電子元件1330、1331、1332或1333之任一者之一第一邊緣1360且法向於此微電子元件之面之一平面1370與該封裝1300內之另一微電子元件之邊緣1360相交。 As further shown in Figures 17A-17B, each of the microelectronic elements 1330, 1331, 1332, and 1333 typically have the same direction extending in the same direction as the one or more rows of contacts on the respective microelectronic element. Two first parallel edges 1360 and two second parallel edges 1362 extending transversely to one of the directions in which the first edges extend. In some cases, the first edge 1360 of a respective microelectronic component can have a length that is greater than the second edge 1362 of the microelectronic component. However, in other cases, the second edges 1362 can have a length greater than the first edges 1360. In the particular package shown in FIG. 17A, any one of the first edges 1360 of at least one of the microelectronic elements 1330, 1331, 1332, or 1333 and the plane 1370 of the face of the microelectronic element is The edge 1360 of another microelectronic component within the package 1300 intersects. As shown in Figure 17A, the axial plane 1370 containing the edge 1360 of the microelectronic element 1333 is in direction 1344. Extending and intersecting the edge 1360 of the microelectronic component 1330 within the package. In the example shown in Figure 17A, the plane 1370 intersects only the edge 1360 of one of the other microelectronic components within the package. The microelectronic elements can be configured to include a first edge 1360 of one of the microelectronic elements 1330, 1331, 1332, or 1333 and normal to a plane 1370 of the face of the microelectronic element and the package 1300 The edge 1360 of another microelectronic component within it intersects.
此外,如圖17A中進一步所示,該中心區域1312可進一步受限。具體言之,圖17A展示該基板1302之表面1310上存在一最小的矩形區域1372,該矩形區域1372將容納如安置於該基板表面1310上之微電子元件1330、1331、1332、1333,且該第一微電子元件1330、該第二微電子元件1331、該第三微電子元件1332及該第四微電子元件1333之面皆不延伸超出該矩形區域1372。在圖17A至圖17B中描繪之微電子封裝1300中,該中心區域1312並未延伸超出該矩形區域1372之任一邊緣。圖17B進一步圖解說明微電子封裝1300內之端子之一可能的配置,在該微電子封裝1300中,該等第一端子1341安置於在該封裝之相對邊緣1316、1318之間(即,正交於該封裝之相對邊緣1316、1318)之一方向上橫跨不大於該封裝之端子之最靠近的兩個相鄰行之間之最小間距之三倍半之一寬度之中心區域1312內。周邊區域佔據該基板1302之表面1310之剩餘面積,從而分別橫跨該中心區域之邊緣與該封裝之相對邊緣1316、1318之間之寬度1356、1357。 Moreover, as further shown in FIG. 17A, the central region 1312 can be further limited. In particular, FIG. 17A shows that there is a minimum rectangular area 1372 on the surface 1310 of the substrate 1302 that will accommodate the microelectronic components 1330, 1331, 1332, 1333 disposed on the substrate surface 1310, and The faces of the first microelectronic component 1330, the second microelectronic component 1331, the third microelectronic component 1332, and the fourth microelectronic component 1333 do not extend beyond the rectangular region 1372. In the microelectronic package 1300 depicted in Figures 17A-17B, the central region 1312 does not extend beyond either edge of the rectangular region 1372. 17B further illustrates a possible configuration of one of the terminals within the microelectronic package 1300 in which the first terminals 1341 are disposed between opposite edges 1316, 1318 of the package (ie, orthogonal In one of the opposite edges 1316, 1318) of the package, spans within a central region 1312 that is no more than one-half and a half times the minimum pitch between two adjacent rows of the closest adjacent ones of the terminals of the package. The peripheral region occupies the remaining area of the surface 1310 of the substrate 1302 to span the width 1356, 1357 between the edge of the central region and the opposite edges 1316, 1318 of the package, respectively.
圖18A圖解說明根據上述實施例之一或多者之一變化形 式之一微電子封裝1400。在此情況中,可省略該基板,使得該微電子封裝1400可呈一微電子元件1430之形式,該微電子元件1430具有包含覆疊微電子元件1430之正面1428之一導電再分佈層之封裝結構。該再分佈層具有延伸穿過該封裝之一介電層1442至該微電子元件之接觸件1438之導電金屬通孔1440。該再分佈層可包含端子1446及與該等端子1446電連接之跡線1448,使得該等端子透過(諸如)該等金屬通孔1440或該等金屬通孔1440及導電跡線1448與該等接觸件1438電連接。在此情況中,該封裝可稱為「其上具有一再分佈層之晶圓級封裝」。 Figure 18A illustrates a variation of one or more of the above embodiments. One of the microelectronic packages 1400. In this case, the substrate can be omitted such that the microelectronic package 1400 can be in the form of a microelectronic component 1430 having a package comprising an electrically conductive redistribution layer overlying the front side 1428 of the overlay microelectronic component 1430. structure. The redistribution layer has conductive metal vias 1440 extending through one of the dielectric layers 1442 of the package to the contacts 1438 of the microelectronic component. The redistribution layer can include a terminal 1446 and a trace 1448 electrically connected to the terminals 1446 such that the terminals pass through, for example, the metal vias 1440 or the metal vias 1440 and the conductive traces 1448 and the like Contact 1438 is electrically connected. In this case, the package may be referred to as a "wafer level package having a redistribution layer thereon."
圖18B圖解說明除第二端子之一行或多行1450可安置於該微電子元件1430之一或多個邊緣1432、1434延伸超出之介電層1442之區域上以外類似於該微電子封裝1400之一微電子封裝1410。在此情況中,該封裝1410可稱為「其上具有一再分佈層之扇出晶圓級封裝」。 18B illustrates that the microelectronic package 1400 is similar to the one or more rows 1450 of the second terminal that can be disposed on one or more of the edges 1432, 1434 of the microelectronic component 1430 that extend beyond the dielectric layer 1442. A microelectronic package 1410. In this case, the package 1410 may be referred to as a "fan-out wafer level package having a redistribution layer thereon."
上述變化形式及實施例之各者亦可適用於圖18A或圖18B中展示之封裝,且上文關於圖7C展示並描述之上述總成可併有圖18A或圖18B中展示之微電子封裝。 Each of the above variations and embodiments may also be applicable to the package shown in FIG. 18A or FIG. 18B, and the above-described assembly shown and described above with respect to FIG. 7C may be combined with the microelectronic package shown in FIG. 18A or FIG. 18B. .
上述結構可用於構造分集電子系統。例如,如圖19中所示,根據本發明之一進一步實施例之一系統1500包含如上文結合其他電子組件1508及1510描述之一微電子封裝或結構1506。在所描繪之實例中,組件1508可為一半導體晶片或微電子封裝,而組件1510係一顯示器螢幕,但是亦可使用任何其他組件。當然,雖然圖19中為圖解清楚起見僅描 繪兩個額外的組件,但是該系統可包含任何數目個此等組件。如上所述之結構1506可為(例如)如上文結合上述實施例之任一者論述之一微電子封裝。在一進一步變化形式中,可提供一個以上的封裝,且可使用任何數目個此等封裝。封裝1506及組件1508及1510安裝在以虛線示意地描繪之一共同的外殼1501中,且按需要彼此電互連以形成所要電路。在展示之例示性系統中,該系統包含諸如一可撓性印刷電路面板或電路板之一電路面板1502,且該電路面板包含使該等組件彼此互連之大量導體1504,圖19中僅描繪該等導體1504之一者。然而,此僅僅係例示性;可使用製造電連接件之任何合適的結構。該外殼1501被描繪為可用於(例如)一蜂巢式電話或個人數位助理中之類型之一可攜式外殼,且螢幕1510曝露於該外殼之表面處。若結構1506包含諸如一成像晶片之一光敏元件,則亦可提供用於路由光至該結構之一透鏡1511或其他光學裝置。再者,圖19中展示之簡化系統緊緊係例示性;可使用上述該等結構製造包含通常視為固定結構之系統(諸如桌上型電腦、路由器等等)之其他系統。 The above structure can be used to construct a diversity electronic system. For example, as shown in FIG. 19, system 1500 in accordance with a further embodiment of the present invention includes a microelectronic package or structure 1506 as described above in connection with other electronic components 1508 and 1510. In the depicted example, component 1508 can be a semiconductor wafer or microelectronic package, while component 1510 is a display screen, although any other components can be used. Of course, although in Figure 19, only the illustrations are clear for illustration. Two additional components are drawn, but the system can contain any number of such components. Structure 1506 as described above can be, for example, a microelectronic package as discussed above in connection with any of the above-described embodiments. In a further variation, more than one package may be provided and any number of such packages may be used. Package 1506 and components 1508 and 1510 are mounted in a common housing 1501 that is schematically depicted in phantom, and electrically interconnected to each other as needed to form the desired circuitry. In the exemplary system shown, the system includes a circuit panel 1502, such as a flexible printed circuit panel or circuit board, and the circuit panel includes a plurality of conductors 1504 interconnecting the components to each other, only depicted in FIG. One of the conductors 1504. However, this is merely exemplary; any suitable structure for making electrical connectors can be used. The housing 1501 is depicted as being usable, for example, in a portable housing of the type of a cellular telephone or a personal digital assistant, and the screen 1510 is exposed at the surface of the housing. If the structure 1506 includes a photosensitive element such as an imaging wafer, a lens 1511 or other optical device for routing light to the structure may also be provided. Moreover, the simplified system shown in FIG. 19 is exemplary in nature; other systems including systems (such as desktops, routers, etc.) that are generally considered to be fixed structures can be fabricated using such structures.
在不脫離本發明之範疇或精神之情況下,本發明之上述實施例之各種特徵可以除如上文具體描述之方式以外的方式組合。本發明旨在涵蓋全部此等組合及上述本發明之實施例之變化形式。 The various features of the above-described embodiments of the invention may be combined in other ways than those specifically described above without departing from the scope or spirit of the invention. The present invention is intended to cover all such combinations and variations of the embodiments of the invention described above.
11‧‧‧半導體晶片/半導體元件 11‧‧‧Semiconductor wafer/semiconductor components
12‧‧‧微電子封裝 12‧‧‧Microelectronics package
12A‧‧‧封裝 12A‧‧‧ package
12B‧‧‧封裝 12B‧‧‧Package
12C‧‧‧封裝 12C‧‧‧ package
12D‧‧‧封裝 12D‧‧‧ package
12E‧‧‧封裝 12E‧‧‧ package
12F‧‧‧封裝 12F‧‧‧ package
14‧‧‧行 14‧‧‧
16‧‧‧第一周邊邊緣 16‧‧‧First perimeter edge
18‧‧‧行 18‧‧‧
20‧‧‧封裝基板 20‧‧‧Package substrate
22‧‧‧第二周邊邊緣 22‧‧‧Second perimeter edge
24‧‧‧中心區域 24‧‧‧Central area
26‧‧‧元件接觸件 26‧‧‧Component contacts
28‧‧‧半導體晶片之面 28‧‧‧ Surface of semiconductor wafer
30‧‧‧引線接合 30‧‧‧ Wire bonding
32‧‧‧黏著層 32‧‧‧Adhesive layer
34‧‧‧電路面板 34‧‧‧Circuit panel
36‧‧‧命令位址匯流排 36‧‧‧Command address bus
38‧‧‧總成 38‧‧‧assembly
40‧‧‧方向 40‧‧‧ Direction
42‧‧‧方向 42‧‧‧ Direction
100‧‧‧微電子封裝 100‧‧‧Microelectronics package
100A‧‧‧第一微電子封裝 100A‧‧‧First microelectronic package
100B‧‧‧第二微電子封裝 100B‧‧‧Second microelectronic package
101‧‧‧微電子元件 101‧‧‧Microelectronic components
102‧‧‧基板 102‧‧‧Substrate
104‧‧‧第一端子 104‧‧‧First terminal
104-1‧‧‧第一端子 104-1‧‧‧First terminal
104-2‧‧‧第一端子 104-2‧‧‧First terminal
104A‧‧‧行 104A‧‧‧
104B‧‧‧行 104B‧‧‧
105‧‧‧柵格 105‧‧‧Grid
106‧‧‧第二端子 106‧‧‧second terminal
106‧‧‧第二端子 106‧‧‧second terminal
106A‧‧‧行 106A‧‧‧
106B‧‧‧行 106B‧‧‧
108‧‧‧基板之第一表面 108‧‧‧The first surface of the substrate
110‧‧‧第二相對表面/基板表面 110‧‧‧Second relative surface/substrate surface
112‧‧‧第二表面之中心區域 112‧‧‧The central area of the second surface
114A‧‧‧第一周邊區域 114A‧‧‧First surrounding area
114B‧‧‧第二周邊區域 114B‧‧‧Second surrounding area
116‧‧‧第一相對邊緣 116‧‧‧ first relative edge
118‧‧‧第二相對邊緣 118‧‧‧ second relative edge
120‧‧‧基板表面/第一相對表面 120‧‧‧Substrate surface / first opposite surface
130‧‧‧微電子元件 130‧‧‧Microelectronic components
132‧‧‧元件接觸件 132‧‧‧Component contacts
134‧‧‧微電子元件之面 134‧‧‧ Faces of microelectronic components
135‧‧‧端子 135‧‧‧ terminals
136‧‧‧基板接觸件 136‧‧‧Substrate contacts
137‧‧‧端子 137‧‧‧terminal
138‧‧‧第一端子 138‧‧‧First terminal
139‧‧‧第二行 139‧‧‧ second line
140‧‧‧軸平面/中心軸 140‧‧‧Axis plane / central axis
142‧‧‧第一方向 142‧‧‧ first direction
143‧‧‧垂直方向/第二方向 143‧‧‧Vertical/second direction
144‧‧‧中線 144‧‧‧ midline
145‧‧‧再分佈接觸件 145‧‧‧Redistributed contacts
146‧‧‧周邊邊緣 146‧‧‧ peripheral edge
147‧‧‧再分佈接觸件 147‧‧‧Redistributed contacts
148‧‧‧周邊邊緣 148‧‧‧ peripheral edge
150‧‧‧最小間距 150‧‧‧Minimum spacing
151‧‧‧周邊邊緣 151‧‧‧ peripheral edge
152‧‧‧寬度 152‧‧‧Width
153‧‧‧周邊邊緣 153‧‧‧ peripheral edge
154A‧‧‧連結元件 154A‧‧‧Connecting components
154B‧‧‧連結元件 154B‧‧‧Connecting components
192‧‧‧第二接觸件 192‧‧‧second contact
230‧‧‧微電子元件 230‧‧‧Microelectronic components
238‧‧‧行 238‧‧‧
240‧‧‧軸平面 240‧‧‧Axis plane
300‧‧‧微電子總成 300‧‧‧Microelectronics assembly
310‧‧‧基板表面 310‧‧‧Substrate surface
312‧‧‧中心區域 312‧‧‧Central area
320‧‧‧虛線 320‧‧‧ dotted line
322‧‧‧虛線 322‧‧‧dotted line
330‧‧‧微電子元件 330‧‧‧Microelectronic components
332‧‧‧接觸件襯墊 332‧‧‧Contact pad
338‧‧‧行 338‧‧‧
339‧‧‧行 339‧‧‧
350‧‧‧相對第一表面/電路面板之表面 350‧‧‧ Relative to the surface of the first surface/circuit panel
352‧‧‧相對第二表面 352‧‧‧ relative second surface
354‧‧‧電路面板 354‧‧‧ circuit panel
356‧‧‧第一表面與第二表面之間之厚度 356‧‧‧ thickness between the first surface and the second surface
358‧‧‧第二微電子元件 358‧‧‧Second microelectronic components
360‧‧‧面板接觸件 360‧‧‧ Panel contacts
362‧‧‧面板接觸件 362‧‧‧ Panel contacts
400‧‧‧微電子封裝 400‧‧‧Microelectronics package
404A‧‧‧行 404A‧‧‧
404B‧‧‧行 404B‧‧‧
404C‧‧‧行 404C‧‧‧
404D‧‧‧行 404D‧‧‧
500‧‧‧微電子封裝 500‧‧‧Microelectronics package
500A‧‧‧微電子封裝 500A‧‧‧Microelectronics package
500B‧‧‧微電子封裝 500B‧‧‧Microelectronics package
504‧‧‧第一端子 504‧‧‧First terminal
505‧‧‧行 505‧‧‧
506A‧‧‧行 506A‧‧‧
506B‧‧‧行 506B‧‧‧
506C‧‧‧行 506C‧‧‧
512‧‧‧中心區域 512‧‧‧Central area
514A‧‧‧周邊區域 514A‧‧‧ surrounding area
514B‧‧‧周邊區域 514B‧‧‧ surrounding area
516‧‧‧邊緣 Edge of 516‧‧
518‧‧‧邊緣 518‧‧‧ edge
530‧‧‧微電子元件 530‧‧‧Microelectronic components
534‧‧‧微電子元件之面 534‧‧‧ Faces of microelectronic components
538‧‧‧元件接觸件 538‧‧‧Component contacts
538A‧‧‧行 538A‧‧‧
538B‧‧‧接觸件 538B‧‧‧Contacts
542‧‧‧第一方向 542‧‧‧First direction
552‧‧‧間距 552‧‧‧ spacing
554‧‧‧中心區域之寬度 554‧‧‧Width of the central area
556‧‧‧中心區域之寬度 556‧‧‧Width of the central area
600‧‧‧微電子封裝 600‧‧‧Microelectronics package
602‧‧‧基板 602‧‧‧Substrate
610‧‧‧第一表面 610‧‧‧ first surface
630‧‧‧微電子元件 630‧‧‧Microelectronic components
632‧‧‧第一半導體晶片 632‧‧‧First semiconductor wafer
634‧‧‧第二半導體晶片 634‧‧‧Second semiconductor wafer
636‧‧‧元件接觸件 636‧‧‧Component contacts
638‧‧‧第一相對面 638‧‧‧ first opposite
640‧‧‧基板接觸件 640‧‧‧Substrate contacts
642‧‧‧第二相對面 642‧‧‧ second opposite
650‧‧‧穿矽通孔 650‧‧‧through through hole
652‧‧‧第一相對面及第二相對面之間之厚度 652‧‧‧ Thickness between the first opposing face and the second opposing face
654‧‧‧跡線 654‧‧‧ Traces
656‧‧‧第一相對面及第二相對面之間之厚度 656‧‧‧ Thickness between the first opposing face and the second opposing face
700‧‧‧微電子封裝 700‧‧‧Microelectronics package
702‧‧‧基板 702‧‧‧Substrate
731‧‧‧接觸件 731‧‧‧Contacts
732‧‧‧第一半導體晶片 732‧‧‧First semiconductor wafer
734‧‧‧第二半導體晶片 734‧‧‧Second semiconductor wafer
800‧‧‧微電子封裝 800‧‧‧Microelectronics package
802‧‧‧基板 802‧‧‧ substrate
831‧‧‧接觸件 831‧‧‧Contacts
832‧‧‧第一半導體晶片 832‧‧‧First semiconductor wafer
834‧‧‧第二半導體晶片 834‧‧‧Second semiconductor wafer
836‧‧‧引線接合 836‧‧‧ Wire bonding
838‧‧‧第一半導體晶片之正面 838‧‧‧Front of the first semiconductor wafer
841‧‧‧接觸件 841‧‧‧Contacts
902‧‧‧基板 902‧‧‧Substrate
904‧‧‧第一端子 904‧‧‧First terminal
906‧‧‧第二端子 906‧‧‧second terminal
930‧‧‧微電子元件 930‧‧‧Microelectronic components
931‧‧‧晶片之對立面 Opposite to the 931‧‧‧ wafer
932‧‧‧第一半導體晶片 932‧‧‧First semiconductor wafer
933‧‧‧半導體晶片之背面 933‧‧‧The back of the semiconductor wafer
934‧‧‧第二半導體晶片 934‧‧‧Second semiconductor wafer
936‧‧‧跡線 936‧‧‧ Traces
938‧‧‧跡線 938‧‧‧ Traces
940‧‧‧跡線 940‧‧‧ Traces
942‧‧‧第二半導體晶片之正面 942‧‧‧The front side of the second semiconductor wafer
943‧‧‧晶片之面 943‧‧‧ Face of the wafer
946‧‧‧接觸件 946‧‧‧Contacts
948‧‧‧接觸件 948‧‧‧Contacts
950‧‧‧第一半導體晶片之面 950‧‧‧ Face of the first semiconductor wafer
952‧‧‧第一半導體晶片 952‧‧‧First semiconductor wafer
954‧‧‧第二半導體晶片 954‧‧‧Second semiconductor wafer
962‧‧‧半導體晶片 962‧‧‧Semiconductor wafer
963A‧‧‧半導體晶片 963A‧‧‧Semiconductor wafer
963B‧‧‧半導體晶片 963B‧‧‧Semiconductor wafer
964‧‧‧半導體晶片 964‧‧‧Semiconductor wafer
968‧‧‧散熱器 968‧‧‧ radiator
969‧‧‧導熱材料 969‧‧‧thermal materials
971‧‧‧翼板 971‧‧‧ wing
972A‧‧‧穿矽通孔 972A‧‧‧through through hole
972B‧‧‧穿矽通孔 972B‧‧‧through through hole
974‧‧‧穿矽通孔 974‧‧‧through through hole
976‧‧‧穿矽通孔 976‧‧‧through through hole
995‧‧‧微電子總成 995‧‧‧Microelectronics assembly
1100‧‧‧微電子封裝 1100‧‧‧Microelectronics package
1102‧‧‧基板 1102‧‧‧Substrate
1110‧‧‧第二表面 1110‧‧‧ second surface
1112‧‧‧第二表面之中心區域 1112‧‧‧The central area of the second surface
1120‧‧‧基板之第一表面 1120‧‧‧ First surface of the substrate
1130‧‧‧第一微電子元件 1130‧‧‧First microelectronic components
1131‧‧‧第二微電子元件 1131‧‧‧Second microelectronic components
1134‧‧‧微電子元件之相鄰邊緣 1134‧‧‧ Adjacent edges of microelectronic components
1135‧‧‧微電子元件之相鄰邊緣 1135‧‧‧Adjacent edges of microelectronic components
1136‧‧‧微電子元件之面 1136‧‧‧ Surface of microelectronic components
1138‧‧‧基板接觸件 1138‧‧‧Substrate contacts
1140‧‧‧基板接觸件 1140‧‧‧Substrate contacts
1142‧‧‧行 1142‧‧
1144‧‧‧導電跡線 1144‧‧‧ conductive traces
1146‧‧‧單平面 1146‧‧‧ single plane
1150‧‧‧軸平面 1150‧‧‧Axis plane
1152‧‧‧最小間距 1152‧‧‧Minimum spacing
1154‧‧‧中心區域之寬度 1154‧‧‧Width of the central area
1162‧‧‧第二端子 1162‧‧‧second terminal
1164‧‧‧周邊區域 1164‧‧‧ surrounding area
1200‧‧‧微電子封裝 1200‧‧‧Microelectronics package
1230‧‧‧第一微電子元件 1230‧‧‧First microelectronic components
1231‧‧‧第二微電子元件 1231‧‧‧Second microelectronic components
1233‧‧‧第三微電子元件 1233‧‧‧ Third microelectronic component
1235‧‧‧第四微電子元件 1235‧‧‧4th microelectronic component
1236‧‧‧封裝之面 1236‧‧‧Package surface
1238‧‧‧行 1238‧‧‧
1242‧‧‧第一端子之行 1242‧‧‧The first terminal trip
1243‧‧‧第一端子 1243‧‧‧First terminal
1244‧‧‧第二端子 1244‧‧‧second terminal
1250‧‧‧軸平面 1250‧‧‧Axis plane
1254‧‧‧中心區域 1254‧‧‧Central area
1260‧‧‧封裝之周邊邊緣 1260‧‧‧The peripheral edge of the package
1261‧‧‧封裝之周邊邊緣 1261‧‧‧The peripheral edge of the package
1262‧‧‧封裝之周邊邊緣 1262‧‧‧The peripheral edge of the package
1263‧‧‧封裝之周邊邊緣 1263‧‧‧The peripheral edge of the package
1270‧‧‧柵格 1270‧‧‧ Grid
1272‧‧‧柵格 1272‧‧‧Grid
1274‧‧‧柵格 1274‧‧‧ Grid
1276‧‧‧柵格 1276‧‧‧Grid
1300‧‧‧微電子封裝 1300‧‧‧Microelectronics package
1302‧‧‧基板 1302‧‧‧Substrate
1310‧‧‧基板表面 1310‧‧‧ substrate surface
1312‧‧‧中心區域 1312‧‧‧Central area
1316‧‧‧封裝之相對邊緣 1316‧‧‧The opposite edge of the package
1318‧‧‧封裝之相對邊緣 1318‧‧‧ The opposite edge of the package
1330‧‧‧第一微電子元件 1330‧‧‧First microelectronic components
1331‧‧‧第二微電子元件 1331‧‧‧Second microelectronic components
1332‧‧‧第三微電子元件 1332‧‧‧ Third microelectronic components
1333‧‧‧第四微電子元件 1333‧‧‧4th microelectronic component
1334‧‧‧行 1334‧‧‧
1338‧‧‧行 1338‧‧‧
1340‧‧‧行 1340‧‧
1341‧‧‧第一端子 1341‧‧‧First terminal
1342‧‧‧第一方向 1342‧‧‧First direction
1344‧‧‧方向 1344‧‧ Direction
1356‧‧‧相對邊緣之間之寬度 1356‧‧‧ Width between opposite edges
1357‧‧‧相對邊緣之間之寬度 1357‧‧‧ Width between opposite edges
1360‧‧‧第一平行邊緣 1360‧‧‧first parallel edge
1362‧‧‧第二平行邊緣 1362‧‧‧second parallel edge
1370‧‧‧平面 1370‧‧‧ Plane
1372‧‧‧矩形區域 1372‧‧‧Rectangular area
1400‧‧‧微電子封裝 1400‧‧‧Microelectronics package
1410‧‧‧微電子封裝 1410‧‧‧Microelectronics package
1428‧‧‧微電子元件之正面 1428‧‧‧ Positive side of microelectronic components
1430‧‧‧微電子元件 1430‧‧‧Microelectronic components
1434‧‧‧微電子元件之邊緣 1434‧‧‧ Edge of microelectronic components
1438‧‧‧接觸件 1438‧‧‧Contacts
1440‧‧‧導電金屬通孔 1440‧‧‧conductive metal through hole
1442‧‧‧介電層 1442‧‧‧ dielectric layer
1446‧‧‧端子 1446‧‧‧ Terminal
1448‧‧‧跡線 1448‧‧‧ Traces
1450‧‧‧行 1450‧‧‧
1500‧‧‧系統 1500‧‧‧ system
1501‧‧‧外殼 1501‧‧‧ Shell
1502‧‧‧電路面板 1502‧‧‧ circuit panel
1504‧‧‧導體 1504‧‧‧Conductor
1506‧‧‧結構/封裝 1506‧‧‧Structure/package
1508‧‧‧電子組件 1508‧‧‧Electronic components
1510‧‧‧電子組件/螢幕 1510‧‧‧Electronic components/screens
1511‧‧‧透鏡 1511‧‧‧ lens
4132‧‧‧微電子元件之邊緣 4132‧‧‧ Edge of microelectronic components
圖1係圖解說明含有一DRAM晶片之一習知微電子封裝 之一截面圖。 Figure 1 is a diagram illustrating a conventional microelectronic package containing a DRAM wafer A section view.
圖2係圖解說明併有一電路面板及彼此相對安裝至該電路面板之第一相對表面及第二相對表面之複數個微電子封裝之一微電子總成(例如,一DIMM模組)之一圖示示意圖。 2 is a diagram illustrating a circuit panel and a microelectronic assembly (eg, a DIMM module) of a plurality of microelectronic packages mounted to the first opposing surface and the second opposing surface of the circuit panel. Schematic diagram.
圖3係進一步圖解說明諸如圖2中展示之一總成中之第一微電子封裝及第二微電子封裝與一電路面板之間之一電互連之一截面圖。 3 is a cross-sectional view further illustrating one electrical interconnection, such as between a first microelectronic package and a second microelectronic package and a circuit panel, in one of the assemblies shown in FIG. 2.
圖4係進一步圖解說明諸如圖2中展示之一總成中之第一微電子封裝與第二微電子封裝之間之電互連之一圖示平面圖。 4 is a diagrammatic plan view further illustrating one electrical interconnection between a first microelectronic package and a second microelectronic package, such as in one of the assemblies shown in FIG. 2.
圖5係圖解說明根據本發明之一實施例之一微電子封裝中之端子之一配置及信號指派之一圖示平面圖。 5 is a diagrammatic plan view of one of a terminal configuration and signal assignment in a microelectronic package in accordance with an embodiment of the present invention.
圖6A係透過圖5之線6A-6A取得之一截面圖,其進一步圖解說明圖5中展示之微電子封裝。 Figure 6A is a cross-sectional view taken through line 6A-6A of Figure 5, which further illustrates the microelectronic package shown in Figure 5.
圖6B係進一步圖解說明根據本文主張之實施例之任一者之一微電子封裝內之一微電子元件上之元件接觸件之一可能配置及接觸件類型之一平面圖,圖5及圖6A中展示該實施例。 6B is a plan view further illustrating one of the possible configurations and contact types of one of the component contacts on a microelectronic component in one of the microelectronic packages in accordance with any of the embodiments claimed herein, in FIGS. 5 and 6A. This embodiment is shown.
圖6C係進一步圖解說明根據本文主張之實施例之任一者之一微電子封裝內之一微電子元件上之元件接觸件之一可能配置及接觸件類型之一平面圖,圖5及圖6A中展示該實施例。 6C is a plan view further illustrating one of the possible configurations and contact types of one of the component contacts on a microelectronic component in one of the microelectronic packages in accordance with any of the embodiments claimed herein, in FIGS. 5 and 6A. This embodiment is shown.
圖7A係進一步圖解說明根據圖5及圖6A中展示之實施例 之一微電子封裝內之一微電子元件之元件接觸件之另一可能配置之一平面圖。 Figure 7A further illustrates an embodiment according to Figures 5 and 6A A plan view of one of the possible configurations of one of the component contacts of a microelectronic component within a microelectronic package.
圖7B係進一步圖解說明根據圖5及圖6A中展示之實施例之端子之一配置之一平面圖。 Figure 7B is a plan view further illustrating one of the configurations of the terminals in accordance with the embodiment shown in Figures 5 and 6A.
圖7C係圖解說明根據本發明之一實施例之一微電子總成及與該微電子總成電互連之第一微電子封裝及第二微電子封裝之一截面圖。 7C is a cross-sectional view of a microelectronic package and a first microelectronic package and a second microelectronic package electrically interconnected with the microelectronic assembly, in accordance with an embodiment of the present invention.
圖7D係圖解說明根據本發明之一實施例之包含一電路面板及電連接至該電路面板之微電子封裝(例如,一記憶體模組等等)之一微電子總成之一示意圖。 7D is a diagram illustrating one of a microelectronic assembly including a circuit panel and a microelectronic package (eg, a memory module, etc.) electrically coupled to the circuit panel, in accordance with an embodiment of the present invention.
圖8係圖解說明根據圖5及圖6A中展示之實施例之一變化形式之一微電子封裝上之端子之一替代性配置之一平面圖。 Figure 8 is a plan view showing an alternative configuration of one of the terminals on a microelectronic package in accordance with one variation of the embodiment shown in Figures 5 and 6A.
圖9A係一平面圖且圖9B係透過圖9A之線9B-9B取得之一對應的截面圖,其等根據圖5及圖6A中展示之實施例之一變化形式圖解說明一微電子封裝。 9A is a plan view and FIG. 9B is a cross-sectional view taken through line 9B-9B of FIG. 9A, which illustrates a microelectronic package in accordance with a variation of the embodiment shown in FIGS. 5 and 6A.
圖9C係圖解說明如圖9A至圖9B中所示之一微電子封裝之一實施例中之一微電子元件與一基板之間之元件接觸件及電連接之一配置之一平面圖。 Figure 9C is a plan view showing one of the arrangement of component contacts and electrical connections between a microelectronic component and a substrate in one embodiment of a microelectronic package as shown in Figures 9A-9B.
圖10係圖解說明根據本發明之一實施例之其中包含半導體晶片之一堆疊電連接總成之一微電子封裝之一截面圖。 Figure 10 is a cross-sectional view illustrating one of the microelectronic packages of a stacked electrical connection assembly including a semiconductor wafer in accordance with an embodiment of the present invention.
圖11A係圖解說明根據本發明之一實施例之其中包含半導體晶片之一堆疊電連接總成之一微電子封裝之一截面圖。 Figure 11A is a cross-sectional view illustrating one of the microelectronic packages of a stacked electrical connection assembly including a semiconductor wafer in accordance with an embodiment of the present invention.
圖11B係圖解說明根據本發明之一實施例之其中包含半導體晶片之一堆疊電連接總成之一微電子封裝之一截面圖。 Figure 11B is a cross-sectional view illustrating one of the microelectronic packages of a stacked electrical connection assembly including a semiconductor wafer in accordance with an embodiment of the present invention.
圖12係圖解說明根據本發明之一實施例之其中包含半導體晶片之一堆疊電連接總成之一微電子封裝之一截面圖。 Figure 12 is a cross-sectional view illustrating one of the microelectronic packages of a stacked electrical connection assembly including a semiconductor wafer in accordance with an embodiment of the present invention.
圖13A係圖解說明根據本發明之一實施例之其中包含半導體晶片之一堆疊電連接總成之一微電子封裝之一截面圖。 Figure 13A is a cross-sectional view illustrating one of the microelectronic packages of a stacked electrical connection assembly including a semiconductor wafer in accordance with an embodiment of the present invention.
圖13B係圖解說明根據本發明之一實施例之其中包含半導體晶片之一堆疊電連接總成之一微電子封裝之一截面圖。 Figure 13B is a cross-sectional view of one of the microelectronic packages of a stacked electrical connection assembly including a semiconductor wafer in accordance with an embodiment of the present invention.
圖14係圖解說明其中包含各自具有面向且連結至對應的基板接觸件之元件接觸件之第一微電子元件及第二微電子元件之一微電子封裝之一實施例之一截面圖。 14 is a cross-sectional view illustrating one embodiment of a microelectronic package including one of a first microelectronic component and a second microelectronic component each having an element contact that faces and is coupled to a corresponding substrate contact.
圖15A係圖解說明根據圖14中展示之實施例之一微電子封裝上之端子之一信號指派之一圖示平面圖,其中圖14係透過圖15A之線14-14取得之一截面圖。 Figure 15A is a diagrammatic plan view showing one of the signal assignments of the terminals on a microelectronic package in accordance with the embodiment shown in Figure 14, wherein Figure 14 is a cross-sectional view taken through line 14-14 of Figure 15A.
圖15B係進一步圖解說明圖14及圖15A之封裝上之端子相對於其中之第一微電子元件及第二微電子元件上之元件接觸件之一可能放置之一平面圖。 Figure 15B is a plan view further illustrating the possible placement of one of the terminals on the package of Figures 14 and 15A with respect to one of the first microelectronic component and the second microelectronic component therein.
圖16A係圖解說明其中具有在一基板上彼此分開之第一微電子元件、第二微電子元件、第三微電子元件及第四微電子元件之一微電子封裝之另一實施例之一平面圖。 16A is a plan view showing another embodiment of a microelectronic package in which one of a first microelectronic component, a second microelectronic component, a third microelectronic component, and a fourth microelectronic component are separated from each other on a substrate. .
圖16B係圖解說明根據圖16A中展示之實施例之該微電 子封裝上之端子之一可能配置及信號指派之一平面圖。 Figure 16B illustrates the micro-electricity according to the embodiment shown in Figure 16A. One of the terminals on the sub-package may be configured and signal-assigned one of the plan views.
圖17A係圖解說明其中具有在一基板上之呈一針狀輪配置彼此分開之第一微電子元件、第二微電子元件、第三微電子元件及第四微電子元件之一微電子封裝之另一實施例之一平面圖。 17A illustrates a microelectronic package in which a first microelectronic component, a second microelectronic component, a third microelectronic component, and a fourth microelectronic component having a needle wheel configuration on a substrate are separated from each other. A plan view of another embodiment.
圖17B係圖解說明根據圖17A中展示之實施例之該微電子封裝上之端子之一可能配置及信號指派之一平面圖。 Figure 17B is a plan view showing one of the possible configurations and signal assignments of the terminals on the microelectronic package in accordance with the embodiment shown in Figure 17A.
圖18A係圖解說明根據圖5及圖6A中展示之實施例之一變化形式之一晶圓級微電子封裝之一截面圖。 Figure 18A is a cross-sectional view of one of the wafer level microelectronic packages in accordance with one variation of the embodiment shown in Figures 5 and 6A.
圖18B係圖解說明根據圖18A中展示之實施例之一變化形式之一扇出晶圓級微電子封裝之一截面圖。 Figure 18B is a cross-sectional view illustrating one of the fan-out wafer level microelectronic packages in accordance with one variation of the embodiment shown in Figure 18A.
圖19係圖解說明根據本發明之一實施例之一系統之一示意截面圖。 Figure 19 is a schematic cross-sectional view of one of the systems illustrating an embodiment of the present invention.
100A‧‧‧第一微電子封裝 100A‧‧‧First microelectronic package
100B‧‧‧第二微電子封裝 100B‧‧‧Second microelectronic package
104-1‧‧‧第一端子 104-1‧‧‧First terminal
104-2‧‧‧第一端子 104-2‧‧‧First terminal
105‧‧‧柵格 105‧‧‧Grid
300‧‧‧微電子總成 300‧‧‧Microelectronics assembly
310‧‧‧基板表面 310‧‧‧Substrate surface
312‧‧‧中心區域 312‧‧‧Central area
320‧‧‧虛線 320‧‧‧ dotted line
322‧‧‧虛線 322‧‧‧dotted line
350‧‧‧相對第一表面/電路面板之表面 350‧‧‧ Relative to the surface of the first surface/circuit panel
352‧‧‧相對第二表面 352‧‧‧ relative second surface
354‧‧‧電路面板 354‧‧‧ circuit panel
356‧‧‧第一表面與第二表面之間之厚度 356‧‧‧ thickness between the first surface and the second surface
360‧‧‧面板接觸件 360‧‧‧ Panel contacts
362‧‧‧面板接觸件 362‧‧‧ Panel contacts
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US13/439,299 US8610260B2 (en) | 2011-10-03 | 2012-04-04 | Stub minimization for assemblies without wirebonds to package substrate |
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JP5895059B2 (en) | 2016-03-30 |
WO2013052398A2 (en) | 2013-04-11 |
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TWI491016B (en) | 2015-07-01 |
JP2014535165A (en) | 2014-12-25 |
EP2764542A2 (en) | 2014-08-13 |
EP2764541A1 (en) | 2014-08-13 |
WO2013052345A1 (en) | 2013-04-11 |
KR20140084131A (en) | 2014-07-04 |
WO2013052347A1 (en) | 2013-04-11 |
WO2013052398A3 (en) | 2013-08-22 |
KR20140081857A (en) | 2014-07-01 |
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TWI489611B (en) | 2015-06-21 |
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