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TW201232731A - Ball grid array semiconductor package and method of manufacturing the same - Google Patents

Ball grid array semiconductor package and method of manufacturing the same Download PDF

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Publication number
TW201232731A
TW201232731A TW100133210A TW100133210A TW201232731A TW 201232731 A TW201232731 A TW 201232731A TW 100133210 A TW100133210 A TW 100133210A TW 100133210 A TW100133210 A TW 100133210A TW 201232731 A TW201232731 A TW 201232731A
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor package
microsphere
microspheres
package according
Prior art date
Application number
TW100133210A
Other languages
English (en)
Inventor
Noriyuki Kimura
Original Assignee
Seiko Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr Inc filed Critical Seiko Instr Inc
Publication of TW201232731A publication Critical patent/TW201232731A/zh

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Description

201232731 六、發明說明： 【發明所屬之技術領域】 本發明係關於BG A半導體封裝體之構造及其製造方法 【先前技術】 隨著電子機器之小型輕量化及高機能化的需求，要求 高密度安裝搭載於電子機器之半導體零件，近年來則要求 小型且薄型、可以高積體化之半導體封裝體。 以如此之潮流爲背景下，半導體封裝體對應於鷗翼式 、無引線、BGA、晶圓位準封裝體等之各種應用而提案有 各種形態。並且，在要求商品之低價格化的近曰環境下， 該些半導體封裝體配合小型、高積體化之功能，更加要求 可以便宜提供者。 與本發明有關之屬於BGA(Ball Grid Array)型的半 導體封裝體係如第7圖所示般，係由半導體元件1、將半導 體元件1搭載至被設置在半導體元件1和基板2之晶片焊墊 23上的接著劑、連接被設置在基板2上之複數之配線20的 接合線6，和密封半導體元件1、接著劑、接合線6及複數 之配線20的密封樹脂11所構成，在另一方之基板2之面上 ，具有於外部連接部21上形成焊錫球22以當作外部端子之 構造。基板2係使用以B T樹脂（雙馬來亞醯胺樹脂）爲代 表之耐熱基板，形成在單面搭載半導體元件1之晶片焊墊 23和複數之配線20 ’在另一方之面’形成外部連接部2 1 ’ 201232731 成爲經覆蓋被設置在基板2之導電層的貫通孔4而連接各個 面的構成。在外部連接部21，電性、物理性連接半導體密 封體和安裝基板的焊錫球22配列搭載成格子狀或交錯狀。 (例如，參照專利文獻1 ) [先行技術文獻] [專利文獻] [專利文獻1]日本特開平7-1 93 1 62號公報 [專利文獻2]美國專利第524 1 1 3 3號 【發明內容】 [發明所欲解決之課題] 如此一來，以往型之BGA半導體封裝體係與使用金屬 之引線框架之半導體封裝體不同，因使用耐熱樹脂之基材 的兩面基板或多層配線基板被使用，故基板製造工程複雜 。例如，於製作基板之時，必須製作用以形成搭載半導體 元件之搭載面側之配線，和形成另一方側之外部連接端子 的電路形成用之遮罩。除此之外，於基板製造時，必須進 行光阻塗佈、曝光顯像、光阻圖案製作、用以使配線及外 部連接端子間導通之貫通孔形成及電鍍形成、光阻剝離處 理、基板之貼合。因此，每一片之基板單價高於金屬引線 框架，有總封裝體成本變高之課題。 再者，以往之BGA半導體封裝體係當作用以連接安裝 基板間之外部連接端子而將焊錫球搭載形成在基板。其形
S -6- 201232731 成方法係採用在基板之外部連接區域塗佈微量之焊錫膏， 或者塗佈助溶劑，黏著連接焊錫球之方式。在上述方式中 ，當在焊錫膏或助熔劑之塗佈量產生偏差時，則在焊錫球 和外部連接區域之接觸面積產生偏差，在接觸面積變小之 情況下，焊錫球之連接強度下降，由於外部之振動或衝擊 有產生焊錫球之位置偏移、形成不良、脫落等之不良的問 題。 再者，如上述般，以往之BGA半導體封裝體因將焊錫 球搭載形成在外部連接端子，故半導體封裝體之全體之厚 度僅有焊錫球之高度部分變厚，有阻礙薄型化之缺點。 本發明係以解決以上三點之課題爲目的，第一因使用 不使用以往之BGA半導體封裝體被使用之雙面或多層基板 之簡略基板，故可以生產便宜之封裝體。第二，因本發明 之BGA半導體封裝體採用將外部連接用之端子之—部分埋 入密封體內之構造，故密封體和外部連接用之端子被強固 連接，可.以提高外部連接端子之連接強度。第三，藉由採 用將外部連接用之端子之一部分埋入至封裝體之密封體內 ’僅外部連接用之端子被埋入至封裝體之密封體內之部分 ’則可以使封裝體薄型化。 如上述般，本發明係提供用以解決以往之B G A半導體 封裝體所具有之上述課題的半導體封裝體及其製造方法。 [用以解決課題之手段] 用以解決上述課題之手段如下述般。 201232731 本發明之BG A半導體封裝體係屬於具備有半導體元件 :搭載上述半導體元件之基板；將上述半導體元件接著於 上述基板之接著劑：被嵌入於設置在上述基板之貫通孔的 導電性之微球（micro-ball ):電性連接上述半導體元件 和上述微球之接合線；及僅在上述基板之半導體元件之搭 載面側，以密封樹脂密封上述半導體元件、上述接著劑、 上述微球之一部分以及上述接合線之密封體的BGA半導體 封裝體，其特徵爲：上述微球之底面之至少一部分具有從 上述密封體之底面通過被設置在上述基板的貫通孔而當作 外部連接用端子予以露出的露出部。 以上述基板由樹脂、玻璃環氧、陶瓷或玻璃形成之絕 緣體所構成，在上述基板形成圓柱狀之貫通孔爲特徵。 以被設置在上述基板之貫通孔之直徑較上述微球之直 徑小爲特徵，並以上述基板之厚度較上述微球之直徑小爲 特徵。 以被設置在插入上述微球之上述基板的貫通孔，藉由 周邊型配置或是陣列（區域）配置形成在上述密封體之底 面爲特徵。 以被設置在上述基板之貫通孔之端面被倒角或推拔加 工爲特徵。 以上述微球之材質由焊錫、金、銀、銅、鋁、鈀或是 鎳之單一金屬材料’或是焊錫、金、銀、銅、鋁' 鈀或是 鎳之各個任一的多層金屬材料所構成爲特徵。 以上述微球之中心部（核心）由具有彈力性之樹脂材 201232731 所構成，係以焊錫、金、銀、銅、鋁、鈀或鎳等之單一金 屬材料覆蓋上述具有彈力性之樹脂材之外周部的複合微球 ，或是以焊錫、金、銀、銅、鋁、鈀或鎳等之各個任一的 多層金屬材料覆蓋上述具有彈力性之樹脂材之外周部的複 合微球爲特徵。 以上述微球之上面高度較被固定在上述晶片焊墊之上 述半導體元件之上面高爲特徵。 以上述微球之上面高度較被固定在上述晶片焊墊之上 述半導體元件之上面低爲特徵。 以上述接合線由金線、銅線、鋁線等之金屬線所構成 爲特徵。 以上述微球之直徑爲5 /z m至500 // m爲特徵。 以具有：在上述基板形成複數之貫穿孔的工程；在形 成有複數之上述貫穿孔的上述基板搭載上述微球的工程； 在設置在除上述貫通孔之外的上述微球搭載側之區域的上 述晶片焊墊部上接合半導體元件之工程；藉由上述接合線 電性連接上述半導體元件和上述微球之工程；以密封樹脂 密封上述半導體元件、上述晶片焊墊 '上述接合線及上述 微球之一部分的工程；將上述密封體個片化成各個BG A半 導體封裝體之工程爲特徵。 以被設置柱上述基板之上述貫通孔之開孔藉由鑽頭加 工、雷射加工、圖案蝕刻加工或是使用模具之壓製加工而 形成爲特徵。 以在上述微球被搭載在上述基板之貫通孔的工程中， -9- 201232731 藉由嵌裝法、吸引法或是基板振動法搭載上述微球爲特徵 〇 以在使用上述接合線電性連接上述半導體元件和上述 微球之工程中，在上述微球藉由吸引固定、推壓固定、藉 由接著材之固定、金屬之熔融連接、超音波連接或是超音 波、熱壓接連接而固定於上述基板之貫通孔之狀態下，使 用打線接合法予以電性連接爲特徵。 以在僅樹脂密封上述打線接合後之構造體之基板上面 側的工程中，使用移轉模法或是膠黏法爲特徵。 以在將上述樹脂密封後之樹脂密封體予以個片化之工 程中，使用切割法爲特徵。 [發明效果] 藉由上述所述之手段，因不使用以往之BGA半導體封 裝體中所使用之兩面基板或是多層基板即可，故可以簡化 基板製造工程，降低每一片基板之單價，生產便宜之封裝 體。 並且’本發明之BG A半導體封裝體係以在密封體內埋 入外部連接用之球的一部分爲特徵，因封裝體之密封體保 持外部連接用之微球之主要體積部分，故密封體和外部連 接用之微球之連接成爲強固。 並且，藉由在密封體內埋入外部連接用之球之一部分 ’可以僅使埋入之部分之厚度變薄，可以實現封裝體全體 之薄型化。
-10- S 201232731 【實施方式】 以下，說明本實施例之BGA半導體封裝體。 第1圖爲本發明之實施例的BGA半導體封裝體之一例 的圖示，（A )爲從密封樹脂側透視密封體之槪略構成的 斜視圖，（B )爲'側面側’ （C )爲上視圖。（D )爲從外 部端子側透視密封體之斜視圖。 如第1圖所示般’在本實施例所示之BGA半導體封裝 體爲具有6個外部連接用端子之6揷銷型之半導體封裝體。 如第1圖（A)〜（D)所示般，具備有半導體元件1、搭 載半導體元件1之基板2、將半導體元件1接著於基板2之接 著劑（無圖示）、嵌入至設置在基板2之貫通孔4的導電性 之微球5、電性連接半導體元件1和微球5之接合線6、僅在 基板2之半導體元件1側以密封樹脂1 1密封半導體元件1、 接著劑3、微球5之一部分及接合線6之密封體。微球5之底 面之至少一部分係如第1圖（B )所示般，從密封體之底面. 通過設置在基板2之貫通孔4而當作外部連接用端子而露出 之露出部。 如第1圖（A)、第1圖（B)所示般，在本實施例之 BGA半導體封裝體中，微球5兼具備有密封體內之半導體 元件1之內部連接用配線之作用，和使用於與安裝基板之 連接之外部連接用端子之作用。 接著，使用具體之尺寸的例說明本實施例所示之BGA 半導體封裝體。例如，使用絕緣性之接著材將厚度1 50 -11 - 201232731 μ m之半導體元件固定於設置在形成於厚度0.2 mm之玻璃 基板2上的六個外部連接端子之中心位置的晶片焊墊區域 。在此，將外部連接用端子之搭載間距L設爲0.5mm，將 貫通孔直徑設爲〇.22mm，將微球5之直徑設爲（K25mm。在 此，將電性連接半導體元件1和微球5之接合線6設爲20 M m直徑之金線。 在本實施例中所使用之微球5係對塑膠粒子表面施予 鎳接著鍍金之球（參考積水化學：Micropearl (註冊商標 ))。在本實施例中，成爲半導體元件1之上面部之高度 較微球5之上面部高之構成，進行接合線之打下。但是， 藉由所要求之半導體裝置內之尺寸、接合線之環圈高度之 限制條件，將半導體元件1之上面部之高度設爲較微球5之 上面部低之構造，即使設爲從半導體元件1朝微球5發射之 佈線型態亦可。於設成發射之佈線型態之時，藉由調整微 球5之直徑之長度和設置在基板2之貫通孔4之直徑之長度 的互相尺寸關係，即是設爲微球5之直徑 >> 貫通孔4之直 徑則可以對應。再者，即使'不改變微球5之直徑和設置在 基板2之貫通孔4之直徑之互相的尺寸，使半導體元件1之 厚度變薄而予以對應亦可。當將連接於微球5之第二接合 之連接點設爲微球5之上面部之頂點時，則可以使接合之 推壓力安定，更進一步確保連接信賴性。
接著，使用每工程所示之圖說明本發明之實施例的 BGA半導體封裝體之製造方法。第2圖（A)及第5圖（D )爲上視圖，第2圖（B)〜第5圖（C)及第6圖爲XI-XI
-12- S 201232731 剖面圖。第2圖（A )及（B )各爲基板2之上視圖、剖面 圖。在基板2形成有貫通孔4。例如，於本實施例之時，使 用鑽頭加工以〇，5 m m間距在縱7 0 m m、橫2 0 0 m m、厚度 0.2mm之玻璃環氧基板形成複數個。貫通孔被配置成排列 在半導體元件之兩側。在貫通孔4之上面部，爲了使微球5 容易搭載至貫通孔4，施予推拔3。基板2即使使用陶瓷、 玻璃亦可。加工方法即使爲雷射加工、圖案蝕刻加工、或 是使用模具之壓製加工亦可。 接著，如第2圖（C)所示般，藉由嵌裝法將微球搭載 至形成在基板2之貫通孔4內。在此，即使使用令基板2振 動而將微球5搭載在貫通孔4內之振動法亦可。在本實施例 所使用之微球5係由球之中心部（核心）具有彈力部之樹 脂材所構成，以由從焊錫、金、銀、銅、鋁、鈀等所選擇 出之單一金屬或是該些金屬所構成之多層金屬覆蓋樹脂材 之外周部。例如，使用在樹脂材之粒子表面施予鎳接著鍍 金之微绿5 (參考··積水化學，MiCr〇peari (註冊商標）） 。在此，使用直徑〇 · 2 5 mm之微球5。並且，即使微球5之 核心不使用樹脂材，而使用由焊錫、金、銀、銅、鋁、鈀 等之單一金屬所構成之微球5，或是僅將一些金屬形成多 層之多層金屬所構成之微球5亦可。微球之直徑雖然設爲 0.2 5 mm，但是可以藉由封裝體之大小 '插銷之數量等， 在5// m至500/i m之間選擇。 接著，說明三種將各個微球5固定於設置在基板2之貫 通孔4之固定方法予以說明。 -13- 201232731 首先，如第3圖（A)所示般，將微球5搭載在基板2 之後，以壓板24推壓微球5之上面，而利用微球5之彈性變 形或塑性變形固定於貫通孔4內。 再者，即使如第3圖（B)所示般，將微球5搭載在基 板2之後，安裝在基板2之下面側吸引微球5之吸引型架7， 從吸引孔8將吸引型架7內之空氣予以吸引，而將吸引型架 7內保持在負壓，並將微球5固定於貫通孔4亦可。在使用 吸引型架7之製造方法中，至完成之後接著實施的晶片黏 結工程、打線接合工程及樹脂密封工程爲止，在基板2安 裝吸引型架7之狀態下流動。 再者，即使如第3圖（C)所示般，於將微球5搭載在 基板2之前，事先在基板2之下面側接著UV膠帶9，藉由膠 帶之接著材將微球5固定於貫通孔4亦可。 接著，如第4圖所示般，使用絕緣性之接著材12將半 導體元件1固定於微球5被固定之基板2上。 接著，如第5圖（A )所示般，電性連接半導體元件1 和微球5。連接係藉由使用金線、銅線或鋁線之打線接合 法而進行。在此，使用20 /z m之金線，藉由超音波熱壓接 法而電性連接半導體元件1和微球5。 接著’如第5圖（B )所示般，在密封模具1 〇內設置完 成打線接合之基板2，以密封1 1僅密封基板2之上面側。在 此，藉由移轉模法進行。於密封樹脂之時，即使使用膠黏 法亦可。第5圖（C)爲表示樹脂密封後之密封體的圖示。 再者’即使對準嵌入陶瓷、玻璃材之空間體來取代密封樹
S -14- 201232731 脂亦可。 接著，因應所需進行樹脂之固化處理，以切割法將第 5圖（D )所示之樹脂密封體上視圖之Y2-Y2部個片化成各 個BG A半導體封裝體。半導體元件1之電特性檢查係在個 片化後或是密封體之狀態下實施。藉由以上之製造方法， 完成本發明之BGA半導體密封體。第6圖爲完成後之BG A 半導體密封體之剖面構造圖。 並且，在本實施例中，雖然成爲外部連接端子之微球 僅配置在半導體元件之兩側，但是顯然也可以包圍半導體 元件而配置在四邊，當然也落入在本發明之範圍內。 【圖式簡單說明】 第1圖爲說明本發明之第一實施例之BGA半導體封裝 體之構造的圖示。 第2圖爲說明本發明之第一實施例之BGA半導體封裝 體之製造方法的圖示。 第3圖爲接著第2圖說明本發明之第一實施例之bga半 導體封裝體之製造方法的圖示。 第4圖爲接著第3圖說明本發明之第一實施例之bga半 導體封裝體之製造方法的圖示。 第5圖爲接著第4圖說明本發明之第一實施例之bGA半 導體封裝體之製造方法的圖示。 第6圖爲本發明之第一實施例之BGA半導體封裝體之 剖面構造圖。 -15- 201232731 第7圖爲說明以往之BGA半導體封裝體之剖面圖。 【主要元件符號說明】 1 :半導體元件 « 2 :基板 3 :推拔 4 :貫通孔 5 :微球 6 ·接合線 7 :吸引型架 8 :吸引孔 9 :膠帶 1 〇 :密封模具 1 1 :密封樹脂 1 2 :接著劑 2 0 :配線 21 :外部連接部 22 :焊錫球 23 :晶片焊墊 2 4 :壓板
16- S

Claims (1)

  1. 201232731 七、申請專利範圍： 1. —種BGA半導體封裝體，其特徵爲具備： .半導體元件； 搭載上述半導體元件之基板； 將上述半導體元件接著於上述基板之接著劑； 其一部分被嵌入被設置於上述基板之貫通孔的導電性 之微球（Micro-ball ); 電性連接上述半導體元件和上述微球之接合線；及 僅在上述基板之上述半導體元件搭載面側，以密封樹 脂密封上述半導體元件、上述接著劑、上述微球中，不被 嵌入於上述貫通孔之部分及上述接合線的密封體， 上述微球之底面之至少一部分具有從上述密封體之底 面通過被設置在上述基板的貫通孔而當作外部連接用端子 予以露出的露出部。 2. 如申請專利範圍第1項所記載之BGA半導體封裝體 ，其中 上述基板係由樹脂、玻璃環氧、陶瓷或玻璃中之任一 絕緣體所構成。 3. 如申請專利範圍第1項或第2項所記載之BGA半導體 封裝體，其中 被設置在上述基板之貫通孔之形狀爲圓形。 4. 如申請專利範圍第3項所記載之BGA半導體封裝體 ，其中 被設置在上述基板之貫通孔之直徑小於上述微球之直 -17- 201232731 徑。 5. 如申請專利範圍第1至4項中之任一項所記載之BGA 半導體封裝體，其中 上述基板之厚度小於上述微球之直徑。 6. 如申請專利範圍第1至4項中之任一項所記載之BGA 半導體封裝體，其中 被設置在插入上述微球之上述基板的貫通孔，係配置 在上述半導體元件之兩側，或配置在包圍上述半導體元件 之四邊。 7. 如申請專利範圍第1至6項中之任一項所記載之BGA 半導體封裝體，其中 被設置在上述基板之貫穿孔之端面被倒角或推拔加工 〇 8. 如申請專利範圍第1至7項中之任一項所記載之BGA 半導體封裝體1其中 上述微球之材質係由使用從焊錫、金、銀、銅、鋁或 是鈀所選擇出之單一金屬材料，或從焊錫、金、銀、銅、 鋁及靶所選擇出之複數之金屬的多層金屬材料所構成。 9. 如申請專利範圍第1至7項中之任一項所記載之BG A 半導體封裝體，其中 上述微球之中心部（核心）係由具有彈力性之樹脂材 所構成，爲以從焊錫、金、銀、銅、鋁或靶所選擇出之單 一金屬材料覆蓋上述具有彈力性之樹脂材之外周部的複合 微球’或是爲以使用從焊錫、金、銀、銅、鋁或靶所選擇 -18- S 201232731 出之複數金屬的多層金屬材料覆蓋上述具有彈力性之樹脂 材之外周部的複合微球。 1 0·如申請專利範圍第1至9項中之任一項所記載之 BG A半導體封裝體，其中 上述微球之上面高度係較被固定於上述晶片焊墊之上 述半導體元件之上面高。 Π .如申請專利範圍第1至9項中之任一項所記載之 BGA半導體封裝體，其中 上述微球之上面高度係較被固定於上述晶片焊墊之上 述半導體元件之上面低。 1 2.如申請專利範圍第1至1 1項中之任一項所記載之 BGA半導體封裝體，其中 上述接合線係由金線、銅線、鋁線中之任一金屬線所 構成。 1 3 .如申請專利範圍第1至1 2項中之任一項所記載之 BG A_半導體封裝體，其中上述微球之直徑爲5"m至500 // m以下。 14. 一種BGA半導體封裝體之製造方法，其特徵爲具 有： 在基板形成複數之貫穿孔的工程； 在形成有複數之上述貫穿孔的上述基板搭載微球的工 程； 在設置在除上述貫通孔之外的上述微球搭載側之區域 的晶片焊墊部上接合半導體元件之工程； -19- 201232731 藉由接合線電性連接上述半導體元件和上述微球之工 程；. 以密封樹脂一體密封上述半導體元件、上述晶片焊墊 、上述接合線及上述微球之一部分的各個，並形成密封體 的工程；及 將上述密封體個片化成各個BGA半導體封裝體之工程 〇 1 5 .如申請專利範圍第1 4項所記載之B G A半導體封裝 體之製造方法，其中 在上述基板形成複數之貫通孔之工程，係藉由鑽頭加 工、雷射加工、圖案蝕刻加工或使用模具之壓製加工之工 程中之任一者而進行。 1 6 ·如申請專利範圍第i 4項所記載之b G a半導體封裝 體之製造方法，其中 在形成有上述複數之貫通孔之上述基板搭載微球之工 程中’上述微球係藉由嵌裝法、吸引法或是基板振動法中 之任一者而被搭載。 1 7 ·如申請專利範圍第1 4項所記載之b G A半導體封裝 體之製造方法，其中 又具有將上述微球固定於形成在上述基板之上述複數 之貫通孔的工程，上述微球係藉由推壓、吸引或是接著材 中之任一者而被固定。 18·如申請專利範圍第17項所記載之BGA半導體封裝 體之製造方法，其中 -20- S 201232731 在將上述微球固定於形成在上述基板之上述複數之貫 通孔的上述工程中，藉由上述接著劑之上述微球之固定， 係於將上述微球搭載於上述基板之前事先使用接著於上述 基板之下面側的UV膠帶之接著劑的固定。 19.如申請專利範圍第14項所記載之BGA半導體封裝 體之製造方法，其中 以密封樹脂一體密封上述半導體元件、上述晶片焊墊 、上述接合線及上述微球之一部分之各個，且在形成密封 體之工程中，在上述微球藉由推壓、吸引或接著材中之任 一者被固定於上述基板之貫通孔之狀態下，藉由移轉模法 或膠黏法施予樹脂密封。 2〇·如申請專利範圍第14項所記載之BGA半導體封裝 體之製造方法，其中 在將上述密封體個片化成各個BG A半導體封裝體之工 程中，使用切割法。 -21 -
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US8456021B2 (en) * 2010-11-24 2013-06-04 Texas Instruments Incorporated Integrated circuit device having die bonded to the polymer side of a polymer substrate

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TWI559418B (zh) * 2014-07-07 2016-11-21 Hitachi Maxell A masking and its manufacturing method

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US20150123277A1 (en) 2015-05-07
CN102412225A (zh) 2012-04-11
US9245864B2 (en) 2016-01-26
US8940629B2 (en) 2015-01-27
CN102412225B (zh) 2016-06-22
US20120068340A1 (en) 2012-03-22
KR20120031147A (ko) 2012-03-30
JP5642473B2 (ja) 2014-12-17

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