200931026 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種用以對半導體裝置或顯示面板等進行 通電檢查之接觸式探針之製造方法及接觸式探針，尤其係 關於一種可簡便且有效地與通電檢查之檢測件之微小間距 化之電極相對應的接觸式探針之製造方法及接觸式探針。 【先前技術】200931026 IX. Description of the Invention: The present invention relates to a method for manufacturing a contact probe for conducting a power-on inspection of a semiconductor device or a display panel, and a contact probe, and more particularly to a simple Further, a method of manufacturing a contact probe and a contact probe which are effective for electrodes having a fine pitch of the detection member for energization inspection are provided. [Prior Art]
❷ 近年來’配設於半導體積體電路、平板顯示器（FPD， flat panel display)等電子裝置基板或者電路配線基板等檢 測件上的端子用電極，具有日益微小間距化之傾向。又’ 作為上述端子用電極之導電體材料，係使用如下各種金屬 材料’例如如金（Au)般之惰性金屬，或者鋁（A1)、甚至如 氧化銦錫（ITO，indium tin oxide)般之表面具有氧化膜之金 屬，同時，彼等之材料特性亦各有不同。因此，於該等電 子裝置或者電路配線板之通電檢查中，在通電檢查裝置 側，需要與該等之電極間距相對應之微小間距之接觸式探 針、及可自如地與上述端子用電極之各種導電體材料相對 應且接觸性優異之接觸式探針。 先剛，作為製造微小間距之接觸式探針之方法，揭示有 -種使用了光微影法之微細加工的方法(例如，參照專利 文獻1)。該方法中，係以如下方式製作接觸式探針，即， 於接觸用基板之平坦表面形成有配設至基板之端部為止的 細長導電層之導線’然後’以使導線之前端部自基板之端 緣突出之方式將基板端部之特定區域切除，從而成為該導 135042.doc 200931026 線之前端部自接觸用基板之端緣突出之彈性接片（以下， 亦稱作接點）。然而，該方法中，在將上述特定區域切除 時有可能對導線造成變形等損傷。 因此，於微小間距之接觸式探針之製造中，揭示有一種 防止接觸用基板斷裂時之導線之損傷的接觸式探針之製造 ❹In recent years, the terminal electrodes disposed on the electronic device substrate such as a semiconductor integrated circuit or a flat panel display (FPD) or a circuit board have become increasingly small pitches. Further, as the conductor material of the above-mentioned terminal electrode, various metal materials such as an inert metal such as gold (Au), or aluminum (A1) or even indium tin oxide (ITO) are used. The surface has a metal of an oxide film, and at the same time, their material properties are also different. Therefore, in the energization inspection of the electronic device or the circuit board, on the side of the current-inspection device, a contact probe having a fine pitch corresponding to the electrode pitch is required, and the electrode for the terminal can be freely used. A contact probe having various electrical conductor materials and excellent contact properties. First, as a method of manufacturing a contact probe of a fine pitch, a method of microfabrication using the photolithography method has been disclosed (for example, refer to Patent Document 1). In this method, a contact probe is formed in such a manner that a lead of an elongated conductive layer disposed on a flat surface of the contact substrate is formed to be disposed at an end portion of the substrate, and then the front end of the lead is self-subscribed from the substrate. The end portion of the substrate is cut away to form a flexible tab (hereinafter, also referred to as a contact) which protrudes from the edge of the contact substrate before the end of the wire 135042.doc 200931026. However, in this method, it is possible to cause deformation or the like of the wire when the specific region is cut off. Therefore, in the manufacture of a contact probe having a small pitch, the manufacture of a contact probe for preventing damage of a wire when the contact substrate is broken is disclosed.
方法（例如，參照專利文獻2)。該方法中，於基板之平坦表 面之端部區域形成犧牲層，藉由使用有與專利文獻丨相同 之光微影法的微細加工技術，而形成前端位於上述犧牲層 上之導線，並於基板之背面形成通過導線之形成於犧牲層 上之部位之正下方的槽。而且’於形成上述導線後將犧牲 層去除’然後使基板自上述槽斷裂。 然而’目前’伴隨因電子裝置等檢測件之小型化及高性 能化所引起的端子㈣極之微小間距化，形成於接觸用基 板上之導線前端之接點之數量（針數量）日趨增加而多針 化，要求達到例如數十〜胸左右之多針數之接觸式探 十於該If形時，該等導線及接點群之配設間距達到例如 加叫左右之微小_，其厚度為1〇〜2〇_左右。而且， 考慮到該等接點與上述電極之接觸麗力之均勾纟，上述厚 度不均之容許範圍為土丨μηι以下。 然而， 點係使用 之不均， 不均勻。 於上述先前之接觸式探針之製造中，導線及其接 電鑛法而形成，因此，其厚度具有例如約±4 ^ 從而於夕個接點間與端子用電極之接㈣力容易 則有可能無法獲得使用 若上述接觸壓力之均勻性較差 135042.doc 200931026 =所需之探針行程量（在接點前端接觸到檢測件之電極後 向垂直方向麼人夕县、·Β·ιεπηα· 原在於’接觸式探針係懸臂 樑H點之厚度會對接觸負載與施加至針根部分之應 力帶來較大影響。尤其是，為微細間距之情形時，當因接 =之厚度而弓丨起不均時，考慮到所需之接觸負載與針根部 刀之彎曲應力，可能無法獲得所需之探針行程量。 ❹Method (for example, refer to Patent Document 2). In this method, a sacrificial layer is formed on an end region of a flat surface of the substrate, and a wire having a front end on the sacrificial layer is formed by using a microfabrication technique similar to the photolithography method of the patent document, and is formed on the substrate. The back surface is formed by a groove directly under the portion of the wire formed on the sacrificial layer. Further, the sacrificial layer is removed after the formation of the above-mentioned wires, and then the substrate is broken from the above grooves. However, the number of contacts (the number of pins) at the tip end of the lead formed on the contact substrate is increasing with the miniaturization of the terminal (four) pole caused by the miniaturization and high performance of the detector such as an electronic device. In the case of a multi-needle, it is required to reach a contact type of, for example, a plurality of stitches of several tens to several chests. In the case of the If shape, the arrangement pitch of the wires and the contact groups reaches, for example, a small amount of the approx. 1〇~2〇_about. Further, in consideration of the uniformity of contact between the contacts and the electrodes, the allowable range of the thickness unevenness is not less than 丨μηι. However, the point system is uneven and uneven. In the manufacture of the above prior contact probe, the wire and the electrification method are formed, and therefore, the thickness thereof has, for example, about ±4 ^, so that the contact with the terminal electrode is possible between the contacts of the terminal (four) force is easy It may not be available if the above contact pressure is poorly uniform. 135042.doc 200931026 = required probe stroke amount (in the direction of the contact of the electrode at the front end of the contact point to the vertical direction, the person 夕县,·Β·ιεπηα·原In the contact probe system, the thickness of the H-point of the cantilever beam has a great influence on the contact load and the stress applied to the root portion of the needle. Especially, in the case of fine pitch, when the thickness is due to the thickness of the joint In the case of unevenness, the required probe stroke amount may not be obtained in consideration of the required contact load and the bending stress of the root knife.
因此’於接觸式探針之製造中，接觸式探針之所有接點 之接觸壓力必須符合產品規格。上述接點群之厚度不均會 使接觸式探針產品之不良率增加，而使其製造良率劣化。 上述問題隨著上述電極之微小間距化及多電極化之發 展、導線及接點為微小間距而變得曰益顯著。再者，作為 解決上述問題之方法’考慮有於電解電鍵法中改善提高膜 厚之均勻性之電鍍條件。然而，今後，隨著上述電極之微 小間距化及多電極化進一步發展，與此同時需要更微小間 距之接觸式探針，因此，僅利用改善電鍍法之電鍍條件而 提局膜厚之均勻性，係無法充分應對上述問題。又，該接 觸式探針之導線及接點之厚度例如厚至約10 μϊη以上從 而會出現無法使用濺鍍法、真空蒸鍍法等膜厚均勻性優異 之其他金屬成膜方法的狀況。 又’伴隨電子裝置或者電路配線基板等電子零件之小型 化/尚性能化，上述端子用電極之微小間距化之同時，上 述電極之導電體材料作出各種變更。因此，要求一種可自 如地與上述導電體材料相對應且電性接觸特性優異之具有 微小間距之接點的接觸式探針。 135042.doc 200931026 [專利文獻1]日本專利特開平8-15318號公報 [專利文獻2]日本專利特開2007-3263公報 【發明内容】 [發明所欲解決之問題] 本發明係鑒於上述情況而完成者，其主要目的在於：於 小型化/高性能化之電子裝置等檢測件之端子用電極微小 間距化中，可高精度地形成與上述電極彈性接觸通電檢 查檢測件之接觸式探針之接點。而且，本發明之目的在於 ^供一種接觸式探針之製造方法及接觸式探針，該接觸式 探針之製造方法係將上述接點之形狀控制在穩定性較高之 尺寸精度’使接點群與上述電極之接觸壓力之均勻化容 易，又，即便電極之金屬材料多種變化，亦容易電性接觸 特性優異之自如對應，可有效地對應於微小間距化之電 極0 [解決問題之技術手段] 為了達成上述目的，第一發明之接觸式探針之製造方法 構成為：該接觸式探針具有配設於基板表面之複數個導線 及自其等之前端部且上述基板之緣端突出之接點，上述接 點彈性接觸於上述檢測件之電極以進行檢測件之通電檢 查’其製造方法包括如下步驟：於上述基板表面形成導電 性之密著層；於上述密著層上形成具有與上述導線相對應 之開口的光阻圖案；於上述開口之上述密著層上藉由電解 電鍍而形成具有彈性之第丨金屬層；對上述光阻圖案及上 述第1金屬層進行化學機械研磨，以使其等之上表面平坦 135042.doc 200931026 化；及將上述平坦化之步驟後殘存之上述光阻圖案去除； 將上述上表面經平坦化之上述第丨金屬層作為上述導線。 而且’第-發明之較㈣樣巾，於±述化學機械研磨之 平坦化之步驟後，將上述光阻圖案之上表面去除至特定深 度而使上述第1金屬層之側面露出，藉由將上述密著層= 為供電層之電解電鍍而於上述第！金屬層之上表面及上述 " 側面形成第2金屬層，然後將上述殘存之光阻圖案去除。 又，第二發明之接觸式探針構成為：具有配 ^面之複數個導線及自其等之前端部且上述基板之緣端^ 之接點，上述接點彈性接觸於上述檢測件之電極以進行檢 測件之通電檢查，且上述複數個導線具有第丨金屬層而 成’其等之上表面經平坦化。 而且，第二發明之較佳態樣中，上述導線之上表面及至 少上述接點之侧面係由第2金屬層所覆蓋。 [發明之效果] 〇 藉由本發明之構成，可進行微小尺寸之接點之尺寸控制 及形狀控制，可簡便地確保接點群之穩定彈性特性及其適 田之壓入量。又，可提供一種即便檢測件之端子用電極之 金屬材料多種變化，電性接觸特性亦優異且自如對應之接 點。如此一來，可提供一種即便例如接點多針化，亦具有 與微小間距之電極之接觸壓力均勻性及電性接觸穩定性優 異之接觸特性的接觸式探針之製造方法及接觸式探針。 【實施方式】 以下，參照圖式對本發明之幾個實施形態進行說明。再 135042.doc 200931026 者，對彼此相同或類似之部分附上共用之符號，並省略部 分重複說明。然而，圖式係模式性者，各尺寸之比率等與 現實者不同。 ~ (第1實施形態） 參照圖1至圖7對本發明之第丨實施形態中之接觸式探針 之製造方法及接觸式探針進行說明。圖丨表示本實施形態 中之接觸式探針之一例，圖i(a)係平面圖，圖1(b)係圖i(a) 之X1-X1箭視剖面圖，圖丨⑷係圖！⑷之又2_又2箭視剖面 圖。而且，圖2係為了說明本實施形態中之接觸式探針之 製造方法，而表示總括製作有複數個接觸式探針之一片基 板的俯視圖。圖3及圖4係為了說明本實施形態中之接觸式 探針之製造方法，以圖1之A1-A1切斷而成部位之各製造步 驟之剖面圖。同樣，圖5及圖6係以圖切斷之部位 之各製造步驟之剖面圖。圖7係為了說明本實施形態之效 果，而模式性地表示接觸式探針與檢測件之端子用電極之 接觸狀態的剖面圖。 本實施形態之接觸式探針中，如圖1所示，於基板丨丨上 以所需數量（圖1中為5根）形成著具有適當彈性特性之導線 12。此處，例如’彼等導線丨2之前端部12&係作為接點， 以窄於基端部12b之間距、且在與檢測件之端子用電極相 對應的位置以微小間距而配設成束狀，並自基板丨丨之一端 緣突出。再者，該導線12係由具有所需之彈性特性之金屬 材料構成，且經由密著層13而配設於基板u上。 而且，本實施形態之接觸式探針，如圖l(b)所示般，所 135042.doc -11 · 200931026 有導線12之上表面係自彼等導線12之前端部12&遍及基端 部12b平坦化而形成。或者，該等各導線12分別藉由黏附 於其上表面及側面之覆蓋層14所覆蓋。與此同時，導線12 中之接點即前端部12a，其上表面以及其端面121之一部分 藉由覆蓋層14而一體地被覆蓋。此處，覆蓋層14係電性連 接於導線12 » 而且，對於導線12之基端部12b而言，雖未圖示，係經 由焊錫、各向異性導電膜（ACF : Anis〇tr〇pic c〇nductiveTherefore, in the manufacture of contact probes, the contact pressure of all contacts of the contact probe must conform to the product specifications. The uneven thickness of the above-mentioned contact group causes an increase in the defective rate of the contact probe product, which deteriorates the manufacturing yield. The above problems are conspicuous with the fine pitch of the electrodes and the development of multi-electrode, and the fine pitch of the wires and the contacts. Further, as a method for solving the above problems, it is considered to improve the plating conditions for improving the uniformity of the film thickness in the electrolytic key method. However, in the future, as the electrode is finely pitched and multi-electrode is further developed, and a contact probe having a finer pitch is required at the same time, the uniformity of the film thickness is improved by merely improving the plating conditions of the plating method. The system cannot adequately address the above issues. Further, the thickness of the lead wire and the contact of the contact probe is, for example, about 10 μϊη or more, and there is a case where another metal film forming method which is excellent in film thickness uniformity such as a sputtering method or a vacuum vapor deposition method cannot be used. In addition, with the miniaturization and performance of electronic components such as electronic devices and circuit wiring boards, the terminal electrodes are finely pitched, and the conductor material of the electrodes is variously modified. Therefore, a contact probe having a contact with a fine pitch which is freely compatible with the above-described conductor material and excellent in electrical contact characteristics is required. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The main purpose of the present invention is to form a contact probe that is elastically contacted with the electrode and inspects the test piece with high precision in a small pitch of the terminal electrode of the detecting device such as a miniaturized/high-performance electronic device. contact. Moreover, the object of the present invention is to provide a method for manufacturing a contact probe and a contact probe, the method for manufacturing the contact probe is to control the shape of the contact to a dimensional stability with high stability. The uniformity of the contact pressure between the point group and the above-mentioned electrode is easy, and even if the metal material of the electrode is varied, it is easy to respond to the electrical contact property, and can effectively correspond to the electrode with a small pitch. [Technical Problem Solving In order to achieve the above object, a contact probe according to a first aspect of the present invention is characterized in that the contact probe has a plurality of wires disposed on a surface of the substrate and a front end portion thereof and the edge of the substrate protrudes a contact of the contact point elastically contacting the electrode of the detecting member to perform an energization inspection of the detecting member. The manufacturing method includes the steps of: forming a conductive adhesive layer on the surface of the substrate; and forming the adhesive layer on the adhesive layer a photoresist pattern corresponding to the opening of the wire; forming an elastic layer by electrolytic plating on the adhesion layer of the opening a bismuth metal layer; chemically polishing the photoresist pattern and the first metal layer such that the upper surface thereof is flat 135042.doc 200931026; and removing the photoresist pattern remaining after the step of planarizing; The above-mentioned second metal layer which planarizes the upper surface is used as the above-mentioned lead wire. Further, after the step of flattening the chemical mechanical polishing, the surface of the resist pattern is removed to a specific depth to expose the side surface of the first metal layer, The above-mentioned adhesion layer = the electroplating of the power supply layer in the above-mentioned first! A second metal layer is formed on the upper surface of the metal layer and the side surface of the above-mentioned ", and the remaining photoresist pattern is removed. Further, the contact probe of the second invention is configured to have a plurality of wires having a matching surface and a contact point from the front end portion of the substrate and the edge of the substrate, wherein the contact is elastically contacted with the electrode of the detecting member The energization inspection of the detecting member is performed, and the plurality of wires have a second metal layer to form a surface on which the upper surface is planarized. Further, in a preferred aspect of the second aspect of the invention, the upper surface of the wire and the side surface of the contact are covered by the second metal layer. [Effect of the Invention] By the configuration of the present invention, the size control and the shape control of the contacts of a small size can be performed, and the stable elastic characteristics of the contact group and the amount of press-fit of the field can be easily ensured. Further, it is possible to provide a contact which is excellent in electrical contact characteristics and freely respondable even if the metal material of the terminal electrode of the detecting member is variously changed. In this way, it is possible to provide a contact probe manufacturing method and a contact probe which have contact characteristics excellent in contact pressure uniformity and electrical contact stability with electrodes of minute pitches, for example, even if the contacts are multi-needle. . [Embodiment] Hereinafter, several embodiments of the present invention will be described with reference to the drawings. In the case of the same or similar parts, the common symbols are attached, and the repeated explanation is omitted. However, the schema is model, and the ratio of each size is different from the actual one. (First Embodiment) A method for manufacturing a contact probe and a contact probe according to a third embodiment of the present invention will be described with reference to Figs. 1 to 7 . Fig. 丨 shows an example of the contact probe in the embodiment, Fig. 1(a) is a plan view, Fig. 1(b) is a cross-sectional view taken along line X1-X1 of Fig. i(a), and Fig. 4(4) is a diagram! (4) Another 2_ and 2 arrows are shown in the cross section. Further, Fig. 2 is a plan view showing a method of manufacturing a contact probe according to the present embodiment, and showing a substrate substrate in which a plurality of contact probes are collectively produced. Figs. 3 and 4 are cross-sectional views showing respective manufacturing steps of a portion cut by A1-A1 of Fig. 1 for explaining the method of manufacturing the contact probe of the present embodiment. Similarly, Fig. 5 and Fig. 6 are cross-sectional views showing respective manufacturing steps of the portion cut away. Fig. 7 is a cross-sectional view schematically showing a state in which the contact probe and the terminal electrode of the detecting member are in contact with each other for explaining the effect of the embodiment. In the contact probe of the present embodiment, as shown in Fig. 1, a wire 12 having a suitable elastic property is formed on a substrate cymbal in a desired number (five in Fig. 1). Here, for example, the front end portions 12 & of the conductor turns 2 are arranged as contacts at a small pitch narrower than the distance between the base end portions 12b and at positions corresponding to the terminal electrodes of the detecting member. Bundle and protrude from one end edge of the substrate. Further, the wire 12 is made of a metal material having a desired elastic property, and is disposed on the substrate u via the adhesion layer 13. Further, in the contact probe of the present embodiment, as shown in FIG. 1(b), the surface of the lead wire 12 is from the front end portion 12& of the lead wire 12 and the base end portion. 12b is formed by planarization. Alternatively, the wires 12 are respectively covered by a cover layer 14 adhered to the upper surface and the side surfaces thereof. At the same time, the contact point in the wire 12, that is, the front end portion 12a, and the upper surface thereof and a portion of the end surface 121 thereof are integrally covered by the cover layer 14. Here, the cover layer 14 is electrically connected to the wire 12 » and the base end portion 12b of the wire 12 is not shown, but is soldered, an anisotropic conductive film (ACF: Anis〇tr〇pic c 〇nductive
Film)、凸塊等接合部而連接於例如可撓性配線板，且電 性連接於通電檢查裝置。 其次，對本實施形態中之接觸式探針之製造方法進行說 明。該說明中，使上述接觸式探針之構造之特徵變得更加 明顯。該接觸式探針之製造步驟中，如圖2所示，直至後 述之某一步驟為止，於一片基板lla上，總括地製作複數 個接觸式探針（圖2中為8個）與導線12等。然後，一片基板 11 a藉由沿著圖2所示之切斷線15之切斷而個別化為基板 11。而且’經個別化之每個基板丨丨，經由之後之製造步驟 而製造為接觸式探針。 如圖3(a)及圖5(a)所示’於1片欲製作複數個接觸式探針 產品之基板lla表面上形成犧牲層16。此處，基板Ua係由 其厚度達到數百微米（μϊη)之例如氧化鍅、氧化鋁、玻璃、 矽等絕緣體材料構成。又，犧牲層16係由膜厚為數十奈米 (nm)以上、較好的是1〇〇 nm以上之膜厚之例如鋼（Cu)、鈦 (Ti)、鉻（Cr)或者該等之複合層而構成之膜等構成，且藉 135042.doc -12- 200931026 由例如銅薄膜之成臈後之使用有光微影法之蝕刻加工、或 者舉離法之所需圖案之選擇性成膜等，而以所需數量形成 於圖2所示之基板lla上之特定之區域。 再者’於利用舉離法形成犧牲層16之情形時，係於基板 11 a表面藉由光被影法形成具有剖面形狀為倒錐之開口之 光阻圖案後，於該開口内之基板lla表面及光阻圖案表面 濺鍍形成犧牲膜，將上述光阻圖案與其上之犧牲膜一併去 除。 而且，覆蓋上述犧牲層16及基板lla表面且利用濺鍍法 形成密著膜17。該密著膜17較好的是由金屬層與供電層構 成的複合層，該金屬層係由相對於例如鈦（Ti)、鉻（c〇等 基板lla具有較大之接著力的金屬材料而構成上述供電 層係由用於後述電解電鍍中之例如鎳（犯）_鐵（Fe)、州-錳 (Μη)、Ni-鈷（Co)等Ni合金而構成。 然而’只#係對基板lla具有接著性且電解電鑛時作為 供電層之金屬材料即可，亦能夠以單層而形成。 其-人，如圖3(b)及圖5(b)所示，藉由例如網版印刷法之 電鍵用之光阻敎形成及該綠狀光微影法之曝光•顯 影，於密著膜17上形成所需之電鑛用之光阻圖案18。此 處’光阻圖案18具有與各上述導線12相對應之開口圖案， 其膜厚例如為20〜40叫左右。再者，該等開口圖案係藉由 光微影法中之眾所周知的不同層間之位置對準方法與犧 牲層1 6之圖案位置對準而形成。 然後如圖3(c)及圖5⑷所示，藉由電解電鍵，使作為 135042.doc -13- 200931026 第1金屬層之導線用電鍍層19成長於該等光阻圖案i8之開 口内之密著膜17上。此處’導線用電鍍層⑺係由具有所需 之彈性特性之金屬材料，例如鎳（Ni)鐵（Fe)、犯錳（Μη)、A joint portion such as a film or a bump is connected to, for example, a flexible wiring board, and is electrically connected to a current-carrying inspection device. Next, a method of manufacturing the contact probe in the present embodiment will be described. In this description, the features of the configuration of the above-described contact probe are made more apparent. In the manufacturing step of the contact probe, as shown in FIG. 2, a plurality of contact probes (eight in FIG. 2) and the wires 12 are collectively formed on one substrate 11a until a certain step to be described later. Wait. Then, one of the substrates 11a is individualized into the substrate 11 by cutting along the cutting line 15 shown in Fig. 2 . Further, each of the individualized substrates is manufactured as a contact probe through a subsequent manufacturing step. As shown in Fig. 3 (a) and Fig. 5 (a), a sacrificial layer 16 is formed on the surface of a substrate 11a on which a plurality of contact probe products are to be produced. Here, the substrate Ua is made of an insulating material such as yttrium oxide, aluminum oxide, glass, or tantalum having a thickness of several hundred micrometers (μ?). Further, the sacrificial layer 16 is made of, for example, steel (Cu), titanium (Ti), chromium (Cr) or the like having a film thickness of several tens of nanometers (nm) or more, preferably 1 〇〇 nm or more. The composite layer is composed of a film or the like, and is etched by, for example, a copper thin film by a photolithography method, or a selective pattern of a lift-off method, by using a film of a copper film, for example, 135042.doc -12-200931026 A film or the like is formed in a specific region on the substrate 11a shown in Fig. 2 in a desired amount. In the case where the sacrificial layer 16 is formed by the lift-off method, the substrate 11a is formed on the surface of the substrate 11a by photo-shaping to form a photoresist pattern having an opening having a cross-sectional shape as an inverted cone. The surface and the surface of the photoresist pattern are sputtered to form a sacrificial film, and the photoresist pattern is removed together with the sacrificial film thereon. Further, the surface of the sacrificial layer 16 and the substrate 11a is covered and the adhesion film 17 is formed by sputtering. The adhesion film 17 is preferably a composite layer composed of a metal layer and a power supply layer, and the metal layer is made of a metal material having a large adhesion force with respect to, for example, titanium (Ti) or chromium (c). The power supply layer is configured by a Ni alloy such as nickel (Fe), iron (Fe), state-manganese (Mn), or Ni-cobalt (Co) used in electrolytic plating to be described later. The lla may have a metal material as a power supply layer in the case of electrolytic conductivity, and may also be formed as a single layer. The person-like, as shown in FIG. 3(b) and FIG. 5(b), by, for example, a screen The formation of the photoresist for the printing method and the exposure and development of the green photolithography method form a desired photoresist pattern 18 for the electro-mineral on the adhesion film 17. Here, the photoresist pattern 18 has The opening pattern corresponding to each of the wires 12 has a film thickness of, for example, about 20 to 40. Further, the opening patterns are by a well-known different interlayer alignment method and a sacrificial layer in the photolithography method. The pattern of 1 6 is aligned and formed. Then, as shown in Fig. 3 (c) and Fig. 5 (4), by electrolysis, the button is used as 135042. .doc -13- 200931026 The wire of the first metal layer is grown on the adhesion film 17 in the opening of the photoresist pattern i8 by the plating layer 19. Here, the plating layer (7) for the wire has the desired elastic properties. Metal materials such as nickel (Ni) iron (Fe), manganese (Mn),
Ni-钻（C。）等Ni合金而構成’且積層形成於作為電解電鑛之 供電層而發揮作用的密著臈17上。 料解電鍍中，導線用電鍍層19之厚度係可於基板na ‘ 上存在不均、例如先前技術中所說明般為±4 μπι左右。其 中，該導線用電鍍層19之厚度較光阻圖案18之厚度要薄。 Φ 此’開口内之導線用電鍍層19之上表面位於光阻圖案18 之上表面之下方。 其次，如圖3(d)及圖5(d)所示，藉由化學機械研磨 (Chemical Mechanical Polishing: CMP)法，以使上述光阻 圖案18及導線用電鍍層19之上表面平坦之方式進行研磨去 除。該CMP中，選擇使光阻圖案18與導線用電鍍層19之研 磨速度大致相同程度的漿料。又，進行如下研磨，即，對 _ 基板11 a與研磨中所使用之裝置之與基板Ua相對向的面之 平行度實施調整。如此，表面經平坦加工之導線〗2及其前 端部12a與光阻圖案i8a係一併形成。 其次’如圖3(e)及圖5(e)所示，對光阻圓案18&上表面進 订追加加工。該追加加工可藉由CMP或者電漿處理而進 订’其中上述CMP使用有可對光阻圖案18a選擇性地進行 研磨之漿料，上述電漿處理包含對光阻圖案1 8&選擇性地 進行钱刻之氧。藉由該追加加工，光阻圖案18&上表面被 去除例如0.5 μιη〜數十μπι ’自導線12上表面及其前端部12a 135042.doc • 14- 200931026 上表面後退而形成有階差，從而形成光阻圖案18b。此 處’光阻圖案18b之厚度可於基板lla上存在不均。 其次，如圖4(a)及圖6(a)所示，藉由將密著膜17作為供 電層之電解電鍍，形成例如膜厚為〇.5 μηΜ μιη左右之第2 金屬層即覆蓋層14 »此處，覆蓋層丨4係電性連接於導線12 之上表面及其前端部12a之上表面以及形成有上述階差而 • 露出的上述導線丨2等之側面而形成。該覆蓋層14由例如A Ni alloy such as Ni-drill (C.) is formed to form a build-up layer formed on the adhesive crucible 17 which functions as a power supply layer for electrolytic electric ore. In the materialization plating, the thickness of the plating layer 19 for the wire may be uneven on the substrate na', for example, as described in the prior art, about ±4 μm. The thickness of the plating layer 19 for the wire is thinner than the thickness of the photoresist pattern 18. Φ The upper surface of the plating layer 19 for the wire in the opening is located below the upper surface of the photoresist pattern 18. Next, as shown in FIG. 3(d) and FIG. 5(d), the surface of the photoresist pattern 18 and the wiring layer 19 for a wire are flattened by a chemical mechanical polishing (CMP) method. Grinding and removing. In the CMP, a paste having a photoresist etching pattern at a level similar to that of the plating layer 19 for a wire is selected. Further, the polishing is performed such that the parallelism of the surface of the substrate 11a opposed to the substrate Ua of the apparatus used for polishing is adjusted. Thus, the wire 2 whose surface is flattened and its front end portion 12a are formed together with the photoresist pattern i8a. Next, as shown in Fig. 3 (e) and Fig. 5 (e), additional processing is performed on the upper surface of the photoresist circle 18 & The additional processing may be performed by CMP or plasma processing, wherein the CMP uses a paste that selectively polishes the photoresist pattern 18a, and the plasma processing includes selectively the photoresist pattern 18 & Carry out the oxygen of the money. By the additional processing, the upper surface of the photoresist pattern 18 & is removed, for example, from 0.5 μm to several tens of μm, and the upper surface of the wire 12 and its front end portion 12a 135042.doc • 14-200931026 are retracted to form a step, thereby forming a step. A photoresist pattern 18b is formed. Here, the thickness of the photoresist pattern 18b may be uneven on the substrate 11a. Next, as shown in Fig. 4 (a) and Fig. 6 (a), by the electrolytic plating of the adhesion film 17 as a power supply layer, for example, a second metal layer which is about 5.5 μηΜ μηη is formed as a coating layer. 14 » Here, the cover layer 4 is electrically connected to the upper surface of the lead wire 12 and the upper surface of the front end portion 12a thereof, and the side surface of the lead wire 2 or the like which is formed by the above-described step difference. The cover layer 14 is for example
Au、Au合金等而構成。再者，該覆蓋層14未形成於光阻 © 圖案18b表面。 繼而，如圖4(b)及圖6(b)所示，利用眾所周知之有機溶 劑之剝離或者氧電漿之灰化等將光阻圖案l8b去除。而 且’如圖4(c)及圖6(c)所示’將藉由上述光阻圖案i8b之去 除而露出之密著膜17餘刻去除，從而形成導線12下及其前 端部12a下之密著層13。 於以上之步驟後’圖2所示之狀態下之基板lla，藉由切 _ 割、喷砂、雷射加工等切斷成各個接觸式探針區域並個別 化為複數個所需形狀之基板11。 然後，如圖4(c)所示，於自基板11 a切出而個別化之基板 11之背面之特定範圍内，形成直線狀延伸之切口槽該 切口槽20係藉由切割、喷砂、雷射加工等，或者，例如， 如 ICP(Inductively Coupled Plasma，感應耗合電聚）般之 HDP(High Density Plasma ’ 高密度電漿）之 DRIE(DeepAu, Au alloy, etc. Furthermore, the cover layer 14 is not formed on the surface of the photoresist © pattern 18b. Then, as shown in Fig. 4 (b) and Fig. 6 (b), the photoresist pattern l8b is removed by peeling of a well-known organic solvent or ashing of an oxygen plasma. Further, 'as shown in FIGS. 4(c) and 6(c), the adhesive film 17 exposed by the removal of the photoresist pattern i8b is removed for a long time, thereby forming the under the wire 12 and the front end portion 12a thereof. Adhesive layer 13. After the above steps, the substrate 11a in the state shown in FIG. 2 is cut into individual contact probe regions by cutting, sandblasting, laser processing, etc., and individualized into a plurality of substrates of a desired shape. 11. Then, as shown in FIG. 4(c), a slit extending in a straight line is formed in a specific range of the back surface of the substrate 11 which is cut out from the substrate 11a and is individualized, and the slit groove 20 is cut, sandblasted, Laser processing, etc., or, for example, HDP (High Density Plasma 'DRIE) like ICP (Inductively Coupled Plasma)
Reactive I〇n Etching，深反應離子刻蝕）方法等，以其線寬 為數十〜數百μιη左右，考慮到基板11之厚度其加工後之剩 135042.doc 15 200931026 餘厚度為數十μιη之方式而形成。此處，切口槽20之深度 方向之槽前端沿例如與導線12之配設方向大致正交的方向 延伸。而且，較佳為以位於犧牲層16之圖案邊之大致正下 方的方式而形成。 其次，如圖4(d)及圖6(d)所示，使用選擇性地溶解犧牲 層16之例如氣化鐵般之蝕刻液將由銅薄膜構成的犧牲層16 去除。藉由將犧牲層16去除，導線12之形成於犧牲層16上 之前端部12a成為自基板11表面浮離的狀態。 其次’如圖4(e)及圖6(e)所示，使基板17沿著切口槽2〇 斷裂’將位於前端部12a側的基板切除。藉此，以上述切 口槽20之區域作為端緣2〇a ’而形成接點，該接點係由自 該端緣20a以例如數百μϊη長度突出的前端部12a、該前端部 12a下表面之密著層13、以及該前端部12a上表面與侧面之 覆蓋層14而構成。 最後，雖未圖示，將導線12之基端部12b經由焊錫、 ACF、凸塊等接合部而連接於例如可撓性配線板，並電性 連接於通電檢查裝置。如此，便完成本實施形態之接觸式 探針。 上述實施形態巾’作為光_案i 8之光㈣構成為，係 由具有感光性之有機系高分子材料、無機系高分子材料或 者該等之複合系材料而構成’於上述用以平坦化之cMp 中’使其與導線用電鍍層19之研磨速度大致相同。 又，導線12及作為接點之其前端部Ua，係由具有適當 之彈性特性之導電體材料構成。而且，作為該導電體材 135042.doc 16 200931026 料’除了 Ni系金屬材料之外，列舉例如铑（Rh)、鉑（Pt)、 Is (Pd)、釕（Ru)、銀（Ir)、銅合金等。 又’覆蓋層14由耐氧化性之金屬材料或者即便氧化亦具 有導電性之金屬材料構成，可選擇具有相對於端子用電極 21具有耐磨損性者。除了例如Au-Co合金、Au-Cu合金、 Au-Pd合金等Au合金之外’列舉即便氧化亦具有導電性之 Ru、Ir金屬及該等之合金》 於使用上述接觸式探針對檢測件進行檢查之情形時，如 圖7所示’使基板11之表面側對向於檢測件之端子用電極 21，且以特定之角度使該基板I〗傾斜，以使具有所需之彈 性特性之接點即前端部12a彈性接觸於端子用電極21表 面。繼而，經由電性連接於導線12之基端部1沘之例如上 述可撓性配線板，自通電檢查裝置輸入檢查信號而進行檢 測件之檢查。此處，端子用電極21除了由先前技術中所說 明的金屬材料構成以外，亦可由例如鋁（A1)、鋁合金、氧 化銦錫膜（ITO臈）、氧化銦鋅膜（IZ〇膜）等構成。 上述檢查中，為了應對電子裝置等檢測件之動作之高速 化，使作為高頻脈衝信號之檢查信號自導線12之前端部 12a通過端子用電極21高速傳输至檢測件而需要用以確 保前端部12a與端子用電極21間之低電感及低阻抗之特定 接觸壓力。因& ’使搭載著檢測件之載物台上升，作為接 觸式探針之接點之前端部12a按壓於端子用電極Η，與此 :時’於電極之移動方向22進行劃擦（scrub)。因此，對於 前端部12a而言’為了可形成適#之探針行程量，極立重 135042.doc 200931026 要的是對決定其彈性特性之主要原因之-的前端部12a之 尺寸及其形狀進行控制。 本實施形態之接觸式探針中，如上所述，因導線以上表 面經平坦化，故而可高精度地控制前端部12a之厚度。因 此，即便因接觸式探針之製造步驟之如圖3⑷及圖5⑷中 所說明之電解電鍍而引起的導線用電鍍層丨9之厚度不均， 例如於1片基板11a面内增大，亦可藉由CMp之平坦化而使 導線12及其前端部12a之厚度不均降低至土丨μηι以下。藉由 該則端部12a之厚度尺寸之控制，即便例如接點多針化， 亦可對於所有接點進行上述適當之壓入量控制，從而可獲 得彈性特性及接觸特性優異之接觸式探針。 又’本實施形態之接觸式探針中，於導線12及其前端部 12a之上表面及侧面形成有覆蓋層14。而且，前端部12&之 覆盖層14接觸於端子用電極21表面。此處，對於覆蓋層14 而言’即便如上所述端子用電極21之金屬材料作出各種變 更’亦可設為與其自如對應之金屬材料，因此電性接觸特 性優異。而且’覆蓋層14係一體地一併覆蓋前端部12a之 上表面以及其端面121，因此藉由相對於前端部i2a之移動 方向22之擦除所產生的摩擦力，不會產生前端部i2a之界 面之剝離。再者’於覆蓋層14僅形成於前端部12a之上表 面之情形時’接觸式探針之多次使用中，會產生上述界面 之剝離。 本實施形態中，因接觸式探針之所有導線之上表面均平 坦化，故而作為導線之前端部之所有接點之尺寸及形狀能 135042.doc -18- 200931026 夠以較阿之精度而相同。因此，即便檢測件之端子用電極 微J間距化或者多針化，接觸式探針之所有接點相對於 上述電極彈性特性及接觸特性亦優異，從而可容易地進行 彼等之壓入量之控制。 又，本實施形態中，伴隨電子裝置等檢測件之小型化或 高性能化，即便上述端子用電極微小間距化並且其導電體 材料作出各種變更，亦可製造電性接觸性優異且自如地對 應之接觸式探針。而且，可高良率地製造由接觸壓力之穩 © 定性及接觸之重複耐久性優異、可靠性較高之接點群構成 的接觸式探針。 如此’本實施形態之接觸式探針可簡便地對應於通電檢 查中之檢測件之端子用電極之微小間距化及多針化。 其次’參照圖8對本實施形態之變形例進行說明。圖8表 示本實施形態中之接觸式探針之變形例，圖8(a)係平面 圖，圖8(b)係圖8(a)之X3-X3箭視剖面圖，圖8(c)係圖8(a) 0 之X4-X4箭視剖面圖。該變形例之特徵在於，於如圖丨所示 之接觸式探針中利用絕緣層將整個導線12覆蓋。以下，主 要對該絕緣層進行說明。 ' 如圖8所示，絕緣層23於接觸式探針上以如下方式而形 ，成，即，形成於基板11表面之導線12之前端部12a及基端 部12b除外’將導線12之上表面及側面覆蓋。此處，對於 該絕緣層23而言，較好的是與基板11之密著性較佳之絕緣 體薄膜。例如列舉氧化矽膜（Si02膜）、或氮化矽膜（siN膜） 等無機膜或者感光性聚醯亞胺膜等有機膜。此處，該等絕 135042.doc -19· 200931026 緣體薄膜較好的是為5 μηι以下之膜厚。 該絕緣層23之形成中，如上述般之絕緣體薄膜，係於以 與上述實施形態中所說明者相同的製造方法形成接觸式探 針後’藉由例如使用了遮罩夹具（shadow mask，蔽蔭·遮罩） 之濺鑛，以自基板11表面上覆蓋除了導線12之前端部12a 及基端部12b之外之導線12的方式成膜。此處，當絕緣層 23為SiON膜之情形時，其Si、Ο、N之組成可作出各種變 更。而且，使與基板11或者導線12之熱膨脹係數之差減 ❹ 小’且不會產生龜裂。 該變形例中’除了實現與上述實施形態所說明者相同之 效果以外’進而’可強化防止導線丨2間之短路及防止基板 11表面之導線12之剝離。該等強化效果於接觸式探針中之 接點之微小間距化或者多針化表現得較為明顯。 (第2實施形態） 參照圖9至圖11對本發明之第2實施形態中之接觸式探針 ❹ 之製造方法及接觸式探針進行說明。圖9係為了說明本實 施形態中之接觸式探針之製造方法，而表示總括製作有複 數個接觸式探針之一片基板的俯視圖。圖1〇及圖u係為了 ' 說明本實施形態中之接觸式探針之製造方法而按各製造步 • 驟表不的模式圖。本實施形態之特徵在於，第丨實施形熊 中所說明之覆蓋層14係形成於導線12之上表面其前端部 12a之一部分側面。 圖9中，直至第1實施形態之圖3(d)及圖5(d)中所說明之 光阻圖案18及導線用電鍍層19之CMP之平坦化之步驟為 135042.doc •20· 200931026 止，實施相同之製造步驟，如圖10(a)所示，於基板Ua上 形成埋入至光阻圖案18之開口而表面平坦之導線12群。其 次’如圖9所示，將複數個接觸式探針之導線12中以束狀 排列之前端區域的光阻圖案18去除，直至達到特定之厚度 為止，分別形成凹陷部24。此處，如圖10(b)所示，於該凹 陷部24各導線12之前端部之一部分側面露出。 該凹陷部24係例如藉由掃描操作之雷射加工之光阻膜之 選擇性钱刻去除、使用具有與凹陷部24相對應之開口之蔽 〇 蔭遮罩之喷砂或者氧電漿的選擇蝕刻，而極其容易地形 成。 其次’如圖11 (a)所示，以與第1實施形態中所說明者相 同之方式，藉由將密著層13作為供電層之電解電鍍，將例 如由Au合金構成之覆蓋層14黏附於導線12及凹陷部24上所 露出之前端部12a之上表面及侧面。然後，以與第1實施形 態所說明者相同之方式，例如如圖1 1 (b)所示，將光阻圖案 18去除’又，於特定之部位使基板11例如斷裂，如圖11(C) β - 所示’形成自基板11之端緣突出之接點即前端部i 2a群。 繼而，雖未圖示’以與第1實施形態中所說明者相同之 • 方式’將導線丨2之基端部12b連接於例如可撓性配線板， . 並電性連接於通電檢查裝置。如此，製造覆蓋層14形成於 導線12之上表面及其前端部12a之側面之接觸式探針。 該第2實施形態中’亦能夠以與第1實施形態之變形例中 所說明者相同之方式，形成將基板U之一部分之表面與除 了前端部12a及基端部12b之外之導線12之上表面及側面覆 135042.doc •21 - 200931026 蓋的絕緣層23。藉由該絕緣層23之形成可實現相同之效 果。 本實施形態中，與第1實施形態相比，接觸式探針中之 覆蓋層14之製作變得簡便，從而可降低其製造成本。而 且’可實現與第1實施形態中所說明者相同之效果。 以上’對本發明之較佳實施形態進行了說明，但上述實 施形態並非係限定本發明者。對於業者而言，可於具體之 實施態樣中在不脫離本發明之技術思想及技術範圍内添加 ❹ 各種變形·變更。 例如，光阻圖案18亦可為，使具有不同之蝕刻特性的感 光性之有機系高分子材料或者無機系高分子材料形成為積 層構造》於該情形時，高精度地進行導線12上表面之平坦 化之後之步驟中所進行的光阻圖案18之回蝕（etchback)控 制或者凹陷部24之深度控制。 又，上述實施形態中，導線12及作為接點之前端部12a 藝之上表面平坦化，亦可不形成上述覆蓋層14。其中，於該 情形時，導線12及前端部12a除了具有如上述般之適當彈 性特性之外，與檢測件之端子用電極21之電性接觸特性優 異，較好的是藉由具有耐磨耗性之導電體材料而形成。 又，上述實施形態中，藉由電解電鍍而成長之導線用電 鍍層19亦可填充光阻圖案18之開口，進而其一部分於光阻 圖案18之上部溢流。其中，於該情形時，繼cMp之步驟之 後，使用可選擇性地對導線用電鍍層19進行研磨之漿料， 以使上述導線用電鑛層19填充於開口之方式將上述溢流部 135042.doc 22· 200931026 分研磨去除。 或者，作為接觸式探針之接點之導線12之前端部i2a亦 可成為並不自基板Η之端緣突出之構造1中，於該情形 時導線12及前端部12a係藉由具有適當之彈性與韌性之 導電體材料而形成。 ' 【圖式簡單說明】 圖1表示本發明之第1實施形態中之接觸式探針之一例， 圖1⑷係平面目，圖叩)係圖1⑷之X1-X1箭視剖面圖，圖 ⑷之X2_X2箭視剖面圖。 〗：2係為了說明本發明之第1實施形態中之接觸式探針之 製造方法，而表示總括製作有複數個接觸式探針之一片基 板的俯視圖。 圖3(a)-(e)係為了說明本發明之第丨實施形態中之接觸式 製k方法，以圖1之A1—A1切斷之部位之各製造步驟 的剖面圖。Reactive I〇n Etching, deep reactive ion etching), etc., with a line width of about several tens to hundreds of μm, considering the thickness of the substrate 11 after processing, the remaining 135042.doc 15 200931026 thickness is several tens of μm Formed by the way. Here, the groove front end in the depth direction of the slit groove 20 extends in a direction substantially orthogonal to the direction in which the wires 12 are disposed, for example. Further, it is preferably formed so as to be located substantially below the pattern side of the sacrificial layer 16. Next, as shown in Figs. 4(d) and 6(d), the sacrificial layer 16 composed of a copper thin film is removed using an etching liquid such as a vaporized iron which selectively dissolves the sacrificial layer 16. By removing the sacrificial layer 16, the front end portion 12a is in a state of being floated from the surface of the substrate 11 before the formation of the wire 12 on the sacrificial layer 16. Next, as shown in Figs. 4(e) and 6(e), the substrate 17 is broken along the slit groove 2, and the substrate on the side of the tip end portion 12a is cut off. Thereby, the contact portion is formed by the region of the slit groove 20 as the end edge 2〇a', and the contact is formed by the front end portion 12a protruding from the end edge 20a by a length of, for example, several hundred μm, and the lower surface of the front end portion 12a. The adhesion layer 13 and the cover layer 14 on the upper surface and the side surface of the front end portion 12a are formed. Finally, although not shown, the base end portion 12b of the lead wire 12 is connected to, for example, a flexible wiring board via a joint portion such as solder, ACF, or bump, and is electrically connected to the energization inspection device. Thus, the contact probe of this embodiment is completed. In the above-described embodiment, the light (the fourth light) is formed of a photosensitive organic polymer material, an inorganic polymer material or a composite material, and is configured to be planarized as described above. In cMp, 'it is substantially the same as the polishing speed of the plating layer 19 for the wire. Further, the lead wire 12 and the tip end portion Ua as a contact are made of a conductor material having appropriate elastic properties. Further, as the conductor material 135042.doc 16 200931026, in addition to the Ni-based metal material, for example, rhodium (Rh), platinum (Pt), Is (Pd), ruthenium (Ru), silver (Ir), copper is exemplified. Alloys, etc. Further, the cover layer 14 is made of a metal material which is resistant to oxidation or a metal material which is electrically conductive even if it is oxidized, and may have a wear resistance with respect to the terminal electrode 21. In addition to an Au alloy such as an Au-Co alloy, an Au-Cu alloy, or an Au-Pd alloy, 'Ru, Ir metal, and the like, which are electrically conductive even if oxidized, are used, and the detecting member is used for the detecting member using the above-described contact probe. In the case of inspection, as shown in FIG. 7, the surface side of the substrate 11 is opposed to the terminal electrode 21 of the detecting member, and the substrate I is tilted at a specific angle so as to have a desired elastic property. The tip end portion 12a is elastically contacted with the surface of the terminal electrode 21. Then, the inspection signal is input from the power-on inspection device via the flexible wiring board electrically connected to the base end portion 1 of the wire 12, for example, and the inspection of the inspection member is performed. Here, the terminal electrode 21 may be composed of, for example, aluminum (A1), an aluminum alloy, an indium tin oxide film (ITO), an indium zinc oxide film (IZ film), or the like, in addition to the metal material described in the prior art. Composition. In the above-described inspection, in order to cope with the increase in the speed of the operation of the detecting device such as an electronic device, the inspection signal as the high-frequency pulse signal needs to be transmitted from the front end portion 12a of the lead wire 12 to the detecting member through the terminal electrode 21 at a high speed. The specific contact pressure between the portion 12a and the terminal electrode 21 is low inductance and low impedance. When the stage on which the detecting member is mounted is raised by & ', the end portion 12a is pressed against the terminal electrode 之前 as the contact of the contact probe, and the time is 'scratched in the moving direction 22 of the electrode (scrub ). Therefore, for the front end portion 12a, in order to form the probe stroke amount, the pole weight 135042.doc 200931026 is intended to be the size and shape of the front end portion 12a which determines the main cause of the elastic property. control. In the contact probe of the present embodiment, as described above, since the surface of the lead wire is flattened, the thickness of the tip end portion 12a can be controlled with high precision. Therefore, even if the thickness of the plating layer 导线9 for the lead wire caused by electrolytic plating as illustrated in Figs. 3(4) and 5(4) of the manufacturing process of the contact probe is uneven, for example, the inside of one substrate 11a is increased. The thickness unevenness of the wire 12 and the tip end portion 12a thereof can be reduced to below 丨μηι by the flattening of the CMp. By controlling the thickness of the end portion 12a, even if the contact is multi-needle, for example, the above-described appropriate press-in amount control can be performed for all the contacts, thereby obtaining a contact probe excellent in elastic characteristics and contact characteristics. . Further, in the contact probe of the present embodiment, the cover layer 14 is formed on the upper surface and the side surface of the lead wire 12 and the distal end portion 12a thereof. Further, the cover layer 14 of the front end portion 12 & contacts the surface of the terminal electrode 21. Here, the cover layer 14 can be made into a metal material which is freely compatible with the metal material of the terminal electrode 21 as described above, and therefore has excellent electrical contact characteristics. Further, the 'cover layer 14 integrally covers the upper surface of the front end portion 12a and the end surface 121 thereof, so that the front end portion i2a is not generated by the frictional force generated by the erasing with respect to the moving direction 22 of the front end portion i2a. Stripping of the interface. Further, when the cover layer 14 is formed only on the surface of the front end portion 12a, the peeling of the above-mentioned interface occurs in the multiple use of the contact probe. In this embodiment, since the surfaces of all the wires of the contact probe are flattened, the size and shape of all the contacts at the front end of the wire can be 135042.doc -18- 200931026 . Therefore, even if the terminal electrode of the detecting member is micro-pitched or multi-needle, all the contacts of the contact probe are excellent in elastic properties and contact characteristics with respect to the above-mentioned electrodes, so that the pressing amount thereof can be easily performed. control. In addition, in the present embodiment, even if the terminal electrode is finely pitched and the conductor material is changed in various ways, the electrical contact property is excellent and the electrical contact property is easily and freely corresponding. Contact probe. Further, it is possible to manufacture a contact probe composed of a contact group having excellent stability and contact durability and high reliability of contact with high contact rate. Thus, the contact probe of the present embodiment can easily correspond to the fine pitch and the multi-needle of the terminal electrode of the detecting member in the energization inspection. Next, a modification of this embodiment will be described with reference to Fig. 8 . Fig. 8 is a view showing a modification of the contact probe according to the embodiment, Fig. 8(a) is a plan view, Fig. 8(b) is a cross-sectional view taken along line X3-X3 of Fig. 8(a), and Fig. 8(c) is a diagram Figure 8 (a) 0 X4-X4 arrow cross-sectional view. This modification is characterized in that the entire wire 12 is covered with an insulating layer in the contact probe shown in Fig. 。. Hereinafter, the insulating layer will be mainly described. As shown in FIG. 8, the insulating layer 23 is formed on the contact probe in such a manner that the front end portion 12a and the base end portion 12b of the lead wire 12 formed on the surface of the substrate 11 are excluded from the conductor 12 Surface and side coverage. Here, the insulating layer 23 is preferably an insulating film which is more excellent in adhesion to the substrate 11. For example, an inorganic film such as a ruthenium oxide film (SiO 2 film) or a tantalum nitride film (siN film) or an organic film such as a photosensitive polyimide film is exemplified. Here, it is preferable that the edge film of the film 155042.doc -19· 200931026 is a film thickness of 5 μηι or less. In the formation of the insulating layer 23, the insulating film as described above is formed by forming a contact probe in the same manufacturing method as that described in the above embodiment, by using, for example, a shadow mask (shadow mask). The splashing of the shade/mask is formed by covering the surface of the substrate 11 with the wires 12 other than the front end portion 12a and the base end portion 12b of the lead wire 12. Here, when the insulating layer 23 is a SiON film, the composition of Si, Ο, and N can be variously changed. Further, the difference between the thermal expansion coefficients of the substrate 11 or the wires 12 is reduced by a small amount, and no crack is generated. In the modification, 'the same effect as that described in the above embodiment is achieved. Further, the short circuit between the lead wires 2 can be prevented and the peeling of the wires 12 on the surface of the substrate 11 can be prevented. These enhancement effects are more pronounced in the small pitch or multi-needle of the contacts in the contact probe. (Second Embodiment) A method of manufacturing a contact probe ❹ and a contact probe according to a second embodiment of the present invention will be described with reference to Figs. 9 to 11 . Fig. 9 is a plan view showing a method of manufacturing a contact probe in the present embodiment, and showing a substrate in which a plurality of contact probes are collectively produced. Fig. 1A and Fig. u are schematic diagrams for explaining the manufacturing method of the contact probe in the present embodiment, in accordance with the respective manufacturing steps. The present embodiment is characterized in that the cover layer 14 described in the second embodiment of the bear is formed on the upper surface of one of the front end portions 12a of the upper surface of the wire 12. In Fig. 9, the steps of planarizing the CMP of the photoresist pattern 18 and the plating layer 19 for the wiring described in Figs. 3(d) and 5(d) of the first embodiment are 135042.doc •20· 200931026 Then, the same manufacturing steps are carried out, and as shown in FIG. 10(a), a group of wires 12 which are buried in the opening of the photoresist pattern 18 and whose surface is flat are formed on the substrate Ua. Next, as shown in Fig. 9, the photoresist pattern 18 in the front end region of the plurality of contact probe leads 12 is removed in a bundle shape until a specific thickness is reached, and the depressed portion 24 is formed. Here, as shown in Fig. 10 (b), a side surface of one end portion of each of the lead wires 12 of the recessed portion 24 is exposed. The recessed portion 24 is selected by, for example, selective removal of a laser-processed photoresist film by a scanning operation, and blasting or oxygen plasma using a mask having a slit corresponding to the recess 24; Etching, which is extremely easy to form. Next, as shown in FIG. 11(a), the cover layer 14 made of, for example, an Au alloy is adhered by electrolytic plating of the adhesion layer 13 as a power supply layer in the same manner as described in the first embodiment. The upper surface and the side surface of the front end portion 12a are exposed on the wire 12 and the recess portion 24. Then, in the same manner as described in the first embodiment, for example, as shown in FIG. 11 (b), the photoresist pattern 18 is removed, and the substrate 11 is broken, for example, at a specific portion, as shown in FIG. 11 (C). β - shows the group of the front end portion i 2a formed as a contact protruding from the edge of the substrate 11. Then, the base end portion 12b of the lead wire 2 is connected to, for example, a flexible wiring board, as shown in the same manner as the one described in the first embodiment, and is electrically connected to the energization inspection device. Thus, the contact layer 14 is formed with a contact probe formed on the upper surface of the wire 12 and the side surface of the front end portion 12a. In the second embodiment, the surface of one portion of the substrate U and the wires 12 other than the front end portion 12a and the base end portion 12b can be formed in the same manner as described in the modification of the first embodiment. Upper surface and side cover 135042.doc •21 - 200931026 Cover insulation layer 23. The same effect can be achieved by the formation of the insulating layer 23. In the present embodiment, the production of the cover layer 14 in the contact probe is simpler than that of the first embodiment, and the manufacturing cost can be reduced. Further, the same effects as those described in the first embodiment can be achieved. The preferred embodiments of the present invention have been described above, but the above embodiments are not intended to limit the invention. For the specific embodiment, various modifications and changes can be added to the specific embodiments without departing from the spirit and scope of the invention. For example, the photoresist pattern 18 may have a photosensitive organic polymer material or an inorganic polymer material having different etching properties as a laminated structure. In this case, the upper surface of the wire 12 is accurately performed. The etchback control of the photoresist pattern 18 or the depth control of the recess 24 is performed in the step after planarization. Further, in the above embodiment, the surface of the lead wire 12 and the end portion 12a before the contact is flattened, and the cover layer 14 may not be formed. In this case, in addition to the appropriate elastic properties as described above, the lead wire 12 and the distal end portion 12a are excellent in electrical contact characteristics with the terminal electrode 21 of the detecting member, and preferably have wear resistance. Formed by a conductive material. Further, in the above embodiment, the electrode plating layer 19 for wire grown by electrolytic plating may fill the opening of the photoresist pattern 18, and a part thereof may overflow over the upper portion of the photoresist pattern 18. In this case, after the step of cMp, the slurry for selectively polishing the wire with the plating layer 19 is used to fill the overflow portion 135042 by filling the wire with the electric ore layer 19 in the opening. .doc 22· 200931026 Sub-grinding removal. Alternatively, the front end portion i2a of the wire 12 as the contact of the contact probe may be in the structure 1 which does not protrude from the edge of the substrate ,, in which case the wire 12 and the front end portion 12a are suitably provided. Formed from an elastomeric and tough electrical conductor material. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an example of a contact probe according to a first embodiment of the present invention, and Fig. 1 (4) is a plan view, and Fig. 1 is an X1-X1 arrow sectional view of Fig. 1 (4), and Fig. 4 (4) X2_X2 arrow view. In order to explain the method of manufacturing the contact probe according to the first embodiment of the present invention, a plan view in which a plurality of contact probes are integrally formed is described. Figs. 3(a) through 3(e) are cross sectional views showing the manufacturing steps of the portion cut by A1 - A1 in Fig. 1 for explaining the contact type k method in the third embodiment of the present invention.
圖4(aMe)係表示繼圖3後接觸式探針之製造步驟之各製 造步驟之剖面圖。 圖5(a)-(e)係為了說明本發明之第丨實施形態中之接觸式 探針之製迈方法，以圖丨之A2_A2切斷之部位之各製造步驟 之剖面圖。 圖6(a)-(e)係表示繼圖5後之接觸式探針之製造步驟之各 製造步驟之剖面圖。 圖7係為了說明本發明之第1實施形態之效果，而模式性 地表不接觸式探針與檢測件之端子用電極之接觸狀態的剖 135042.doc -23- 200931026 面圖。 圖8表示本發明之第1實施形態中之變形例之接觸弋探針 之一例’圖8(a)係平面圖，圖8(b)係圖8(a)2x3_x；3箭視剖 面圖’圖8(c)係圖8(a)之χ4_χ4箭視剖面圖。 圖9係為了說明本發明之第2實施形態中之接觸式探針之 製造方法，而表示總括製作有複數個接觸式探針之一片基 * 板的俯視圖。 圖10(a)、（b)係為了說明本發明之第2實施形態中之接觸 ❹ 式探針之製造方法而按各製造步驟表示的模式圖。 圖ll(a)-(c)係表示繼圖1〇後之接觸式探針之製造步驟之 模式圖。 【主要元件符號說明】 11 、 11a 基板 12 導線 12a 前端部 12b 基端部 13 密著層 14 覆蓋層 15 切斷線 16 犧牲層 17 密著膜 18、18a、18b 光阻圖案 19 導線用電鍍層 20 切口槽 135042.doc -24- 200931026 21 端 子 用 電極 22 移動 方 向 23 絕 緣 層 24 凹 陷 部 121 端 面 135042.doc -25-Fig. 4 (aMe) is a cross-sectional view showing the respective manufacturing steps of the manufacturing steps of the contact probe after Fig. 3. Fig. 5 (a) - (e) are cross-sectional views showing respective manufacturing steps of a portion cut by A2_A2 in the drawing, in order to explain the method of manufacturing the contact probe in the third embodiment of the present invention. Figures 6(a)-(e) are cross-sectional views showing respective manufacturing steps of the manufacturing steps of the contact probe subsequent to Figure 5. Fig. 7 is a cross-sectional view showing a state in which the contact between the non-contact probe and the terminal electrode of the detecting element is in a state of the first embodiment of the present invention, and is in the form of a cross-section 135042.doc-23-200931026. Fig. 8 is a plan view showing a contact probe of a modification of the first embodiment of the present invention. Fig. 8(a) is a plan view, and Fig. 8(b) is a view of Fig. 8(a) 2x3_x; 8(c) is a cross-sectional view of the arrow 4_χ4 of Fig. 8(a). Fig. 9 is a plan view showing a method of manufacturing a contact probe according to a second embodiment of the present invention, and showing a sheet base plate in which a plurality of contact probes are collectively produced. Figs. 10(a) and (b) are schematic diagrams showing the respective manufacturing steps for explaining the method of manufacturing the contact probe according to the second embodiment of the present invention. Figures 11(a)-(c) are schematic views showing the manufacturing steps of the contact probe subsequent to Figure 1. [Main component symbol description] 11 , 11a substrate 12 wire 12a front end portion 12b base end portion 13 adhesion layer 14 cover layer 15 cutting line 16 sacrificial layer 17 adhesion film 18, 18a, 18b photoresist pattern 19 wire plating layer 20 Notch groove 135042.doc -24- 200931026 21 Terminal electrode 22 Moving direction 23 Insulation layer 24 Depression 121 End face 135042.doc -25-