200816297 4UMCD-2005-0550 18359twf.doc/t 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種化學機械研磨（chemical Mechanical Polishing，CMP)製程，且特別是有關於一種可 增進生產量的化學機械研磨製程。 【先前技術】 "Ik著το件尺寸持、_縮減，微影曝光解析度相對增加， 伴，著曝光景深的縮減，對於晶片表面之高低起伏程度的 要求更為嚴苛。因此在進入深次微米的製程時，晶片的平 坦化(pi贿ization)就依賴化學機械研磨製程來完成，它獨 特的非等向性磨除性質除了用於晶片表面輪靡之平坦化之 Lit可應祕垂直及水平金4内連線(Intei*_eets)之鑲 製r 1段製程中元件淺溝渠隔離製作及先進元 衣乍、微機電純平坦化和平面齡器製作等。 ，學機械研磨裝置大多使用研磨頭(pGiishing head)抓 ^曰片⑽㈣，紐把晶片的正面壓在舖有—層 =y)之研磨墊(pad)的研磨台(p。脑ng pia㈣上進行研 研磨研磨製程之後，上述化學機械 齡會有殘留顆粒(particle)堆積，這些 、二、“自研漿中的研磨微粒，有的則可能是來自晶片 磨去除的_材料。因此，為了保持研磨墊的清潔， 留ff用研磨墊調㈣如_)來去除研磨墊上的殘 、粒’以維持研磨墊對晶片的研磨速率與穩定度。 4 200816297 5UMCD-2005-0550 18359twf.doc/t 以· 一調節11觸研磨墊的料^種，-種是現 %(m-S1tu)调郎，也就是—邊進行研磨製 一 ^ 器作調節處理；另-種是非現場(㈣ 〉j即 研磨製程前或研磨製程後使用 在母一批 所：=:過r，=_， 造成研磨後有晶片刮傷上’而 的冷主浓恭>+ m 士 ；夂疋铽刮痕(microscratch) 研磨裝卩製程f要料化學機械 所石衣置中的所有aa片研磨完畢， 研磨墊進行調節，所啸浪費時間。]衣置外之後才對 【發明内容】 節省製i:目的就疋在提供一種化學機械研磨製程，以 据井目的是提供—種化學機械研磨製程，可 提升生產率(throughput)。 驟及提出—種化學機械研磨製程，至少包括研磨步 =及非現Wtu)調節步驟，其特徵在於：於研磨步驟 後，立即進行非現場調節步驟。 =本發明的—較佳實_所述之化學機械研磨製 ，、中研磨步驟包括先將—晶片壓在—研磨台上進行研 層移開，磨™ - 依知本發明的—較佳實施_述之化學機械研磨製 5 200816297 6UM CD-2005-05 50 18359twf.doc/t 程，其中非現場(ex_situ)調節步驟包括利用一調節器調節上 述研磨塾。 本發明再提出一種化學機械研磨製程，適於在一化學 機械研磨裝置中進行。這種化學機械研縣置包括數個ς 磨區與-機械手臂，其中每-研磨區至少包括—研磨頭、 -研磨台、-研漿供應裝置以及1㈣，每―研磨區的200816297 4UMCD-2005-0550 18359twf.doc/t IX. Description of the Invention: [Technical Field] The present invention relates to a chemical mechanical polishing (CMP) process, and in particular to an improved production process A quantity of chemical mechanical polishing process. [Prior Art] "Ik with τ ο 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸 尺寸Therefore, when entering the deep submicron process, wafer flattening depends on the chemical mechanical polishing process, and its unique anisotropic finishing properties are in addition to the flattening of the wafer surface rim. It can be used in the vertical and horizontal gold 4 interconnects (Intei*_eets) in the inlaid r 1 section process for the fabrication of shallow trenches and advanced elementary clothing, micro-electromechanical pure flattening and flat age making. Most of the mechanical grinding devices use a grinding head (pGiishing head) to grasp the cymbal (10) (4), and the front side of the wafer is pressed against a polishing table (p. brain ng pia (four)) with a polishing pad (layer = y). After grinding the grinding process, the above chemical mechanical age will have residual particles, these two, "the abrasive particles in the slurry, and some may be the material removed from the wafer grinding. Therefore, in order to maintain the grinding Clean the pad, leave ff with the polishing pad (4) such as _) to remove the residue on the polishing pad, to maintain the polishing rate and stability of the polishing pad. 4 200816297 5UMCD-2005-0550 18359twf.doc/t One adjusts the material of the 11-touch polishing pad, the type is the current % (m-S1tu) lang, that is, while the grinding is performed to adjust the processing; the other is the off-site ((4) 〉 j is the grinding process Used in the mother batch before or after the grinding process: =: over r, = _, causing a scratch on the wafer after grinding, and the cold main + gt; + m 士; 夂疋铽 scratch (microscratch) grinding The mounting process f requires all the aa pieces in the stoneware set of the chemical machinery to be ground. The grinding pad is adjusted, and the time is wasted.] After the clothing is placed outside, the invention is saved. The purpose of the invention is to provide a chemical mechanical polishing process to provide a chemical mechanical polishing process according to the purpose of the well. To improve the throughput. A chemical mechanical polishing process, including at least a grinding step = and a non-current Wtu adjustment step, is characterized in that an off-site adjustment step is performed immediately after the grinding step. Preferably, the CMP process comprises: first pressing the wafer onto the polishing table to perform the layer removal, and grinding the TM - the preferred embodiment of the invention. Grinding system 5 200816297 6UM CD-2005-05 50 18359twf.doc/t, wherein the off-site (ex_situ) adjustment step comprises adjusting the above-mentioned grinding crucible by means of a regulator. The invention further proposes a chemical mechanical polishing process suitable for The chemical mechanical grinding device is arranged. The chemical mechanical research county includes a plurality of honing zones and a mechanical arm, wherein each grinding zone includes at least a grinding head, a grinding table, and a slurry. Supply device and 1 (four), each - grinding area
該研磨頭承載H而該機械手臂可帶動每—研磨區的 該研磨頭，其步驟包括： a) 下壓研磨頭，以使晶片接觸研磨台上的研磨墊； b) 進行研磨； c) 上移研磨頭，以使晶片離開研磨墊； d) 於步驟c之後立即以調節器對研磨墊進行非現場 (ex-situ)調節；以及 e)旋轉機械手臂，以帶動晶片至下一研磨區。 依照本發明的另一較佳實施例所述之化學機械研磨製 程，其中步驟d與步驟e可同時被進行。 依如本發明的另一較佳實施例所述之化學機械研磨製 程，其中進行步驟d之後，再進行步驟e。 本考X月因為在晶片研磨完畢之後，立即進行非現場 (ex金)調節步驟，所以不但可以節省製程時間。而且，當 本1月應用於具有多個研磨區的化學機械研磨裝置時，還 可正口研磨間不同的研磨區，以達到縮短整體製程時間 並進而提升生產率的目的。 為讓本《明之上述和其他目的、特徵和優點能更明顯 6 200816297 7UMCD-2005-0550 18359twf.doc/t 勿值5 明如下 卜又特舉較佳實施例 【實施方式】 本發明的概念是在研磨晶片之後立 步驟’以減少整體的製程時間。以下特舉幾二 Γ 本發S ”二但本並:是要將本發明限定在這些'實:‘ 磨製=本發明之-較佳實— 驟，步行步驟1〇〇’研磨步 研磨，晶片壓在-個研磨台上進行 有-層供有研;::研::磨 非現場(ex-situ)調節步驟，而且 ' 订^驟U〇， :磨台上移開的瞬間，就利用一個調節3 = 墊，而不像習知是在日片姑 的巧即^、上之研磨 始用調節器調節上述二塾。夕1 一研磨區的研磨台才開 研磨===應用於具有多個研磨_^^ 研磨製程=驟2二:=實施:之-種化學機械 裘置，這種化學機械研磨』置'歹二】於一般化學機械研磨 臂’其中每個研磨區至少包括匕固二„ —機械手 一個研漿供應裝置 们研应頭、一個研磨台、 可承载=研顧的研麵 ^手细可讀母個研磨區的研廢 200816297 8UMCD-2005-0550 18359twf.doc/t 頭0 請參㈣2，先進行步驟·，下壓研麵，以使晶片 3研磨台上的研磨墊。然後，進行步驟21〇，進行研磨。 :行步驟220，上移研磨頭，以使晶片離開研磨墊。 二t了广驟230，以調節器對研磨墊進行非現場(eX_S㈣ ::If進行步驟 ’旋轉機械手臂，以帶動晶片 至下一研磨區。 =每個研磨區的研磨時間可能設定成相同或不同， 二則Ϊ = _中’如果每個研磨區的研磨時間是相同 磨區的^ Γ進订步驟230與步驟。相反地，每個研 w、研磨日守間如果是不同的，則當研磨 進行非現場調節）的時候‘時間較長 較短“步驟21()(it行研磨）°因此’以研磨時間 械手臂），;Γ點來看，此時不可進行步驟24〇(旋轉機 220(使晶片離：等到研磨時間較長的研磨區完成步驟 如果重複^ ^物讀’才缺行步驟。此外， 頂2中的步驟，則可用於大量生產上。 磨區的化Ϊ =個實例，來證明本發明應用於具有多個研 予钱械研磨裝置時所能達到的效果。 實例一 圖3是依照本發明之實例一以及習知一的彳匕風 磨製程之時間分布圖。 的化予機械研 時，，當化學機械研磨裝置具有三個研磨區 上、Ρ2、Ρ3分別代表研磨區中的第_研磨台、第 200816297 9UMCD-2005-0550 18359twf.doc/t 二研磨台與第三研磨台，且每一 6〇秒。此外，曰κ妯^ 后的研磨時間都設為 制丰奸L二 —研磨區_移輔等同於 枝械手臂域的時_定為 節的定為2。秒，則不需進行非 間座圖LI知’當P1之研磨步驟完成時(圖中之時 步進^、因此一的非現場調節與轉移步驟同 始研们4秒^之_^研2=晶片被移到P2並開 調節，並可以進行下一個晶的麻ί P1就完成非現場 ^ ^ f ^ 習知一從P1移到P2的曰 、凡成才執仃，所以 間座標為26)後，才^P1的#== 2G_中之時 的方法能使每—晶片節省 _周二。所以，本發明 間6秒（=6 sec/wai^。 A械研磨製程的整體製程時 實例二 圖4是依照本發明之實二 磨製程之時間分布圖。、一篇知二的化學機械研 請參照® 4，實例二與實 因此 標 的研磨時間設為60秒，而 ' f只在P1與P2、 此’當第-晶片於P1之研磨磨二間严設為70秒。 為0)，會同時進行非現場：轉:日:(圖中之時間座 之第-晶片在開始研磨Μ秒^^驟，而使得被移 後’ P1就完成非現場調節並進二化間座標為抑 且，當被移到P2之第一曰y + —日日片的研磨步驟。而 弟日日片元成研磨步驟時(圖中之時間 200816297 10UMCD-2005-0550 18359twf.doc/t 座“為80)，可在14秒後與第二晶片同時進行轉移 P3開始進行70秒的研磨步驟（圖中之時間座標為 相較與實例二，習知二因為被移到P2之第__晶片研 磨步驟時㈣之_座標為86)，必須等待％秒後 弟二晶片同時進行轉移，所以需要花費較長的製程時間了 知上所述，本發明之特點在於晶片研磨完畢後 調節步驟，以節省化學機械·製程㈣ 間。而f ’虽本發明應用於具有多個研磨 磨裝置時，射整合研磨_不_各研魏， 短整體製程時間的目的，進而提升生產率。 達％ if定以較佳實施例揭露如上，然其並非用以 :範，當可作些許之更動與潤飾，因此本發以 犯圍當視後附之申請專利範圍所界定者為 【圖式簡單說明】 磨製佳實施例之—種化學機械研 研磨發明之另一較佳實施例之一種化學機械 磨製明之實例-以及習知-的化學機械研 圖4,照本發明之實例二以 磨製程之時間分布圖。 錢餓研 【主要元件符號說明】 100〜11〇、200〜240 ·•步驟 10The polishing head carries H and the robot arm can drive the polishing head of each grinding zone, the steps comprising: a) pressing the polishing head to contact the wafer with the polishing pad on the polishing table; b) performing grinding; c) The polishing head is moved to cause the wafer to exit the polishing pad; d) the polishing pad is subjected to an ex-situ adjustment immediately after the step c; and e) the robot arm is rotated to drive the wafer to the next polishing zone. A CMP process according to another preferred embodiment of the present invention, wherein step d and step e can be performed simultaneously. A chemical mechanical polishing process according to another preferred embodiment of the present invention, wherein after step d, step e is performed. In this test, since the off-site (ex gold) adjustment step is performed immediately after the wafer is polished, the process time can be saved. Moreover, when this January is applied to a chemical mechanical polishing apparatus having a plurality of polishing zones, it is also possible to grind different grinding zones between the nozzles in order to shorten the overall process time and thereby increase productivity. The above and other objects, features and advantages of the present invention can be made more obvious. 6 200816297 7UMCD-2005-0550 18359twf.doc/t No. 5 is as follows, and a preferred embodiment [Embodiment] The concept of the present invention is The step is 'after grinding the wafer' to reduce the overall process time. The following are a few of the following: Γ 发 二 二 二 二 : : : 是 是 是 是 是 是 是 是 是 是 是 二 二 二 二 二 , , , , , , , , , , , , , , , , , , 步行 步行 步行The wafer is pressed on a polishing table to perform a layer-by-layer study;:: Research:: An off-site (ex-situ) adjustment step, and 'fixing the U〇, the moment when the grinding table is removed, Using an adjustment 3 = pad, instead of conventionally adjusting the above-mentioned two-in-one with a grinder on the surface of the Japanese film, the polishing table of the grinding zone is opened and the grinding is applied === Having multiple grinding _^^ Grinding process = step 2 2: = implementation: - chemical mechanical polishing, this chemical mechanical grinding " 歹 2" in general chemical mechanical grinding arm 'each of which includes at least匕固二„ —Manipulator A slurry supply device, research head, a grinding table, can carry = research, research, hand-finished, grinding, grinding, polishing, 200816297 8UMCD-2005-0550 18359twf.doc /t Head 0 Please refer to (4) 2, first step, press the grinding surface to make the wafer 3 grind the polishing pad on the table. Then, the process proceeds to step 21 and polishing. Steps 220, moving the polishing head up to move the wafer away from the polishing pad. The second step is 230, and the polishing pad is off-site with the regulator (eX_S(4)::If step is performed to rotate the robot arm to drive the wafer to the next polishing zone. = The grinding time of each grinding zone may be set to be the same or Different, two Ϊ = _中' if the grinding time of each grinding zone is the same grinding zone step 230 and the steps are reversed. Conversely, if each grinding and grinding day is different, then When the grinding is performed off-site adjustment), the time is longer and shorter. Step 21 () (it is grinding). Therefore, 'the grinding time is used to arm the arm'.) From the point of view, step 24 can not be performed at this time. 220 (to make the wafer away: wait until the grinding time is longer than the grinding time to complete the step if the repeating ^ ^ material reading 'only missing steps. In addition, the steps in the top 2 can be used for mass production. By way of example, it is demonstrated that the present invention can be applied to a plurality of mortar-grinding devices. Example 1 FIG. 3 is a time distribution diagram of a hurricane grinding process according to Example 1 of the present invention and a conventional one. Chemicalization, when chemistry The mechanical grinding device has three grinding zones, Ρ2, Ρ3 respectively representing the first grinding table in the grinding zone, and the second grinding table and the third grinding table of the 200816297 9UMCD-2005-0550 18359twf.doc/t, and each 6〇 In addition, the grinding time after 曰κ妯^ is set to make the rape L2—the grinding zone _ shifting auxiliary is equivalent to the branch arm field _ is set to 2 for the knot. The inter-seat diagram LI knows that when the grinding step of P1 is completed (stepping ^ in the figure, therefore, the off-site adjustment and transfer steps of the same one are the same as those of the researcher for 4 seconds ^^研2=The wafer is moved to P2 and Open the adjustment, and you can carry out the next crystal of the ίP1 to complete the off-site ^ ^ f ^ I know that one moves from P1 to P2, and the squad is finished, so the coordinates are 26), then ^P1# The method at == 2G_ can save _ Tuesday for each wafer. Therefore, the invention is 6 seconds (=6 sec/wai^. The overall process of the A-mechanical polishing process is shown in Figure 2, Figure 4 is in accordance with the present invention. The time distribution map of the actual two-grinding process. For a chemical mechanical study of Zhiji 2, refer to ® 4, and the grinding time of the second and the actual standard is set to 60 seconds. ' f only in P1 and P2, this 'When the first wafer is polished to P1, the setting is strictly set to 70 seconds. It is 0), and the off-site will be performed simultaneously: Turn: Day: (The time of the figure is the first - The wafer is initially ground for a few seconds, so that after being moved, 'P1 completes the off-site adjustment and enters the coordinates of the second division, and is moved to the first 曰y +-day grinding step of P2. When the diary film is in the grinding step (the time in the figure is 200816297 10UMCD-2005-0550 18359twf.doc/t seat is "80"), after 14 seconds, the P3 can be transferred simultaneously with the second wafer to start 70 seconds. The grinding step (the time coordinate in the figure is compared with the second example, the second is because the moving to the P2 is the __ wafer grinding step (four) _ coordinate is 86), must wait for the second second after the second wafer simultaneously transfer Therefore, it takes a long process time. As described above, the present invention is characterized in that the wafer is polished after the adjustment step to save the chemical mechanical process (four). However, although the present invention is applied to a plurality of polishing apparatuses, the purpose of integrating the polishing is not the same as that of the entire processing time, thereby improving the productivity. %% if it is disclosed in the preferred embodiment as above, but it is not used to: Fan, when some changes and refinements can be made, therefore, the scope of the patent application scope defined in this article is [Graph BRIEF DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE PREFERRED EMBODIMENT OF THE INVENTION A chemical mechanical grinding method of another preferred embodiment of the invention is a chemical mechanical grinding example - and a conventional chemical mechanical drawing 4, according to the second embodiment of the present invention The time distribution of the grinding process. Money Hungry Research [Main component symbol description] 100~11〇, 200~240 ·•Step 10