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TW200727485A - Thin film transistor and method for manufacturing the same - Google Patents

Thin film transistor and method for manufacturing the same

Info

Publication number
TW200727485A
TW200727485A TW095100631A TW95100631A TW200727485A TW 200727485 A TW200727485 A TW 200727485A TW 095100631 A TW095100631 A TW 095100631A TW 95100631 A TW95100631 A TW 95100631A TW 200727485 A TW200727485 A TW 200727485A
Authority
TW
Taiwan
Prior art keywords
region
layer
gate electrode
channel
thin film
Prior art date
Application number
TW095100631A
Other languages
Chinese (zh)
Other versions
TWI298542B (en
Inventor
Chih-Hung Shih
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW95100631A priority Critical patent/TWI298542B/en
Publication of TW200727485A publication Critical patent/TW200727485A/en
Application granted granted Critical
Publication of TWI298542B publication Critical patent/TWI298542B/en

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Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention relates to a thin film transistor and a method for manufacturing the same. The method includes the following steps: a gate electrode is formed on a substrate. Then, an insulating layer, a semiconductive layer, an ohmic contact layer and a metal layer are sequentially formed covering the gate electrode and the substrate. A photoresist pattern layer is formed on the metal, which is located over the gate electrode and one side of the gate electrode. The photoresist pattern layer comprises a first region, a second region and a third region. The first region is defined as a channel. The second region is defined as a source/drain. The third region is located on one side of the second region. The metal layer, the ohmic contact layer and the semiconductive layer are selectively etched to define the channel and the source/drain. Then, bevel side of the partial source/drain far away from the channel is formed.
TW95100631A 2006-01-06 2006-01-06 Thin film transistor and method for manufacturing the same TWI298542B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95100631A TWI298542B (en) 2006-01-06 2006-01-06 Thin film transistor and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95100631A TWI298542B (en) 2006-01-06 2006-01-06 Thin film transistor and method for manufacturing the same

Publications (2)

Publication Number Publication Date
TW200727485A true TW200727485A (en) 2007-07-16
TWI298542B TWI298542B (en) 2008-07-01

Family

ID=45069417

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95100631A TWI298542B (en) 2006-01-06 2006-01-06 Thin film transistor and method for manufacturing the same

Country Status (1)

Country Link
TW (1) TWI298542B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157387A (en) * 2010-11-19 2011-08-17 友达光电股份有限公司 Thin film transistor and method of manufacturing the same
US8309966B2 (en) 2008-04-18 2012-11-13 Au Optronics Corp. Gate driver on array of a display
TWI557921B (en) * 2007-08-07 2016-11-11 半導體能源研究所股份有限公司 Display device and electronic device having the display device, and method for manufacturing thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473273B (en) * 2011-08-15 2015-02-11 Au Optronics Corp Thin film transistor, pixel structure and method for fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI557921B (en) * 2007-08-07 2016-11-11 半導體能源研究所股份有限公司 Display device and electronic device having the display device, and method for manufacturing thereof
US8309966B2 (en) 2008-04-18 2012-11-13 Au Optronics Corp. Gate driver on array of a display
CN102157387A (en) * 2010-11-19 2011-08-17 友达光电股份有限公司 Thin film transistor and method of manufacturing the same

Also Published As

Publication number Publication date
TWI298542B (en) 2008-07-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees