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TW200633049A - Gas supply unit, substrate processing apparatus, and supply gas setting method - Google Patents

Gas supply unit, substrate processing apparatus, and supply gas setting method

Info

Publication number
TW200633049A
TW200633049A TW094143443A TW94143443A TW200633049A TW 200633049 A TW200633049 A TW 200633049A TW 094143443 A TW094143443 A TW 094143443A TW 94143443 A TW94143443 A TW 94143443A TW 200633049 A TW200633049 A TW 200633049A
Authority
TW
Taiwan
Prior art keywords
gas
gas supply
supply unit
gaseous mixture
branch lines
Prior art date
Application number
TW094143443A
Other languages
Chinese (zh)
Other versions
TWI441254B (en
Inventor
Kenetsu Mizusawa
Keiki Ito
Masahide Itoh
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200633049A publication Critical patent/TW200633049A/en
Application granted granted Critical
Publication of TWI441254B publication Critical patent/TWI441254B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.
TW094143443A 2004-12-09 2005-12-08 A gas supply device, a substrate processing device, and a supply gas setting method TWI441254B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004357292A JP4358727B2 (en) 2004-12-09 2004-12-09 Gas supply apparatus, substrate processing apparatus, and supply gas setting method

Publications (2)

Publication Number Publication Date
TW200633049A true TW200633049A (en) 2006-09-16
TWI441254B TWI441254B (en) 2014-06-11

Family

ID=36667053

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094143443A TWI441254B (en) 2004-12-09 2005-12-08 A gas supply device, a substrate processing device, and a supply gas setting method

Country Status (4)

Country Link
JP (1) JP4358727B2 (en)
KR (1) KR100753692B1 (en)
CN (1) CN100390933C (en)
TW (1) TWI441254B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4550507B2 (en) 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP4895167B2 (en) * 2006-01-31 2012-03-14 東京エレクトロン株式会社 Gas supply apparatus, substrate processing apparatus, and gas supply method
US20080078746A1 (en) 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
JP5211450B2 (en) * 2006-08-15 2013-06-12 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
JP5192214B2 (en) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 Gas supply apparatus, substrate processing apparatus, and substrate processing method
JP5378706B2 (en) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 Plasma processing apparatus and processing gas supply apparatus used therefor
JP5452133B2 (en) * 2009-08-27 2014-03-26 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
JP5562712B2 (en) * 2010-04-30 2014-07-30 東京エレクトロン株式会社 Gas supply equipment for semiconductor manufacturing equipment
JP5689294B2 (en) 2010-11-25 2015-03-25 東京エレクトロン株式会社 Processing equipment
JP5792563B2 (en) 2011-08-31 2015-10-14 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus
JP2014003234A (en) * 2012-06-20 2014-01-09 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
JP6034655B2 (en) 2012-10-25 2016-11-30 東京エレクトロン株式会社 Plasma processing equipment
JP6030994B2 (en) 2013-05-15 2016-11-24 東京エレクトロン株式会社 Plasma etching apparatus and plasma etching method
US9620417B2 (en) 2014-09-30 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method of manufacturing fin-FET devices
KR102039237B1 (en) * 2015-05-17 2019-10-31 엔테그리스, 아이엔씨. Gas cabinet
JP6502779B2 (en) * 2015-07-29 2019-04-17 東京エレクトロン株式会社 Method of inspecting leak of valve of gas supply system
JP7073710B2 (en) 2017-01-20 2022-05-24 東京エレクトロン株式会社 Plasma processing equipment
CH713539A1 (en) * 2017-03-03 2018-09-14 Pelco Sarl Automatic gas mixer.
JP7296854B2 (en) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 Gas supply method and substrate processing apparatus
CN117198848A (en) * 2022-06-01 2023-12-08 长鑫存储技术有限公司 Gas distribution device, plasma processing device and method
CN114774887A (en) * 2022-06-22 2022-07-22 拓荆科技(北京)有限公司 Gas delivery device, method and semiconductor deposition equipment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136098A (en) * 1991-11-15 1993-06-01 Seiko Epson Corp Apparatus and method for manufacturing semiconductor device
US5916369A (en) * 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
JPH09289170A (en) * 1996-04-23 1997-11-04 Sony Corp Semiconductor manufacturing equipment
US6210482B1 (en) * 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
CN1240113C (en) * 2002-08-20 2006-02-01 东京毅力科创株式会社 Plasma etching method and device
JP4127779B2 (en) * 2002-08-28 2008-07-30 株式会社神戸製鋼所 Hot isostatic pressurizing device and hot isostatic pressurizing method
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system

Also Published As

Publication number Publication date
JP4358727B2 (en) 2009-11-04
CN100390933C (en) 2008-05-28
KR20060065510A (en) 2006-06-14
CN1787170A (en) 2006-06-14
JP2006165399A (en) 2006-06-22
TWI441254B (en) 2014-06-11
KR100753692B1 (en) 2007-08-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees