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TW200632240A - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus - Google Patents

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Info

Publication number
TW200632240A
TW200632240A TW095100854A TW95100854A TW200632240A TW 200632240 A TW200632240 A TW 200632240A TW 095100854 A TW095100854 A TW 095100854A TW 95100854 A TW95100854 A TW 95100854A TW 200632240 A TW200632240 A TW 200632240A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
way valve
processing gas
fabricating semiconductor
valve
Prior art date
Application number
TW095100854A
Other languages
Chinese (zh)
Other versions
TWI312840B (en
Inventor
Seok-Jun Won
Yong-Min Yoo
Dae-Youn Kim
Young-Hoon Kim
Dae-Jin Kwon
Original Assignee
Samsung Electronics Co Ltd
Asm Genitech Korea Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Asm Genitech Korea Inc filed Critical Samsung Electronics Co Ltd
Publication of TW200632240A publication Critical patent/TW200632240A/en
Application granted granted Critical
Publication of TWI312840B publication Critical patent/TWI312840B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04CROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C29/00Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
    • F04C29/0092Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K7/00Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Valve Housings (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.
TW095100854A 2005-01-19 2006-01-10 Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus TWI312840B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050005074 2005-01-19
KR1020050076968A KR100699861B1 (en) 2005-01-19 2005-08-22 Apparatus having 4-way valve for fabricating semiconductor device, method of controling valve and method of fabricating semiconductor device using the same

Publications (2)

Publication Number Publication Date
TW200632240A true TW200632240A (en) 2006-09-16
TWI312840B TWI312840B (en) 2009-08-01

Family

ID=36936115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100854A TWI312840B (en) 2005-01-19 2006-01-10 Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Country Status (3)

Country Link
KR (1) KR100699861B1 (en)
CN (1) CN100573813C (en)
TW (1) TWI312840B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI672729B (en) * 2016-08-25 2019-09-21 Asm知識產權私人控股有限公司 Exhaust apparatus, and substrate processing apparatus using the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468105B (en) * 2010-11-01 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 Inductance coupled plasma device
US9410244B2 (en) * 2012-09-04 2016-08-09 Asm Ip Holding B.V. Semiconductor processing apparatus including a plurality of reactors, and method for providing the same with process gas
JP6410622B2 (en) * 2014-03-11 2018-10-24 東京エレクトロン株式会社 Plasma processing apparatus and film forming method
TW201634738A (en) * 2015-01-22 2016-10-01 應用材料股份有限公司 Improved injector for spatially separated atomic layer deposition chamber
TWI723024B (en) 2015-06-26 2021-04-01 美商應用材料股份有限公司 Recursive inject apparatus for improved distribution of gas
CN105088192B (en) * 2015-08-12 2018-01-26 上海华力微电子有限公司 Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air
JP6826666B2 (en) * 2017-07-28 2021-02-03 京セラ株式会社 Sensor module
CN109751511B (en) * 2017-11-07 2020-11-10 北京北方华创微电子装备有限公司 Pipeline protection device and method
CN110943003B (en) * 2018-09-21 2023-08-18 北京北方华创微电子装备有限公司 Process gas purging method
CN111696848B (en) * 2019-03-12 2023-12-22 北京北方华创微电子装备有限公司 Film forming equipment and film forming method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055260A (en) 1986-05-20 1991-10-08 Union Carbide Industrial Gases Technology Corporation Reactor analysis system
US5259233A (en) * 1991-04-24 1993-11-09 American Air Liquide Counterflow valve
JP2001007032A (en) 1999-06-23 2001-01-12 Shimadzu Corp Fluid material feeder
JP4002060B2 (en) 2000-09-26 2007-10-31 株式会社島津製作所 Liquid material supply device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI672729B (en) * 2016-08-25 2019-09-21 Asm知識產權私人控股有限公司 Exhaust apparatus, and substrate processing apparatus using the same

Also Published As

Publication number Publication date
KR20060084345A (en) 2006-07-24
CN1825537A (en) 2006-08-30
KR100699861B1 (en) 2007-03-27
TWI312840B (en) 2009-08-01
CN100573813C (en) 2009-12-23

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