TW200632240A - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus - Google Patents
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusInfo
- Publication number
- TW200632240A TW200632240A TW095100854A TW95100854A TW200632240A TW 200632240 A TW200632240 A TW 200632240A TW 095100854 A TW095100854 A TW 095100854A TW 95100854 A TW95100854 A TW 95100854A TW 200632240 A TW200632240 A TW 200632240A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- way valve
- processing gas
- fabricating semiconductor
- valve
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
- F04C29/0092—Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Automation & Control Theory (AREA)
- Chemical Vapour Deposition (AREA)
- Valve Housings (AREA)
- Drying Of Semiconductors (AREA)
Abstract
An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20050005074 | 2005-01-19 | ||
KR1020050076968A KR100699861B1 (en) | 2005-01-19 | 2005-08-22 | Apparatus having 4-way valve for fabricating semiconductor device, method of controling valve and method of fabricating semiconductor device using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200632240A true TW200632240A (en) | 2006-09-16 |
TWI312840B TWI312840B (en) | 2009-08-01 |
Family
ID=36936115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095100854A TWI312840B (en) | 2005-01-19 | 2006-01-10 | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100699861B1 (en) |
CN (1) | CN100573813C (en) |
TW (1) | TWI312840B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI672729B (en) * | 2016-08-25 | 2019-09-21 | Asm知識產權私人控股有限公司 | Exhaust apparatus, and substrate processing apparatus using the same |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468105B (en) * | 2010-11-01 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupled plasma device |
US9410244B2 (en) * | 2012-09-04 | 2016-08-09 | Asm Ip Holding B.V. | Semiconductor processing apparatus including a plurality of reactors, and method for providing the same with process gas |
JP6410622B2 (en) * | 2014-03-11 | 2018-10-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and film forming method |
TW201634738A (en) * | 2015-01-22 | 2016-10-01 | 應用材料股份有限公司 | Improved injector for spatially separated atomic layer deposition chamber |
TWI723024B (en) | 2015-06-26 | 2021-04-01 | 美商應用材料股份有限公司 | Recursive inject apparatus for improved distribution of gas |
CN105088192B (en) * | 2015-08-12 | 2018-01-26 | 上海华力微电子有限公司 | Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air |
JP6826666B2 (en) * | 2017-07-28 | 2021-02-03 | 京セラ株式会社 | Sensor module |
CN109751511B (en) * | 2017-11-07 | 2020-11-10 | 北京北方华创微电子装备有限公司 | Pipeline protection device and method |
CN110943003B (en) * | 2018-09-21 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Process gas purging method |
CN111696848B (en) * | 2019-03-12 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Film forming equipment and film forming method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055260A (en) | 1986-05-20 | 1991-10-08 | Union Carbide Industrial Gases Technology Corporation | Reactor analysis system |
US5259233A (en) * | 1991-04-24 | 1993-11-09 | American Air Liquide | Counterflow valve |
JP2001007032A (en) | 1999-06-23 | 2001-01-12 | Shimadzu Corp | Fluid material feeder |
JP4002060B2 (en) | 2000-09-26 | 2007-10-31 | 株式会社島津製作所 | Liquid material supply device |
-
2005
- 2005-08-22 KR KR1020050076968A patent/KR100699861B1/en active IP Right Grant
-
2006
- 2006-01-10 TW TW095100854A patent/TWI312840B/en active
- 2006-01-19 CN CNB2006100058760A patent/CN100573813C/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI672729B (en) * | 2016-08-25 | 2019-09-21 | Asm知識產權私人控股有限公司 | Exhaust apparatus, and substrate processing apparatus using the same |
Also Published As
Publication number | Publication date |
---|---|
KR20060084345A (en) | 2006-07-24 |
CN1825537A (en) | 2006-08-30 |
KR100699861B1 (en) | 2007-03-27 |
TWI312840B (en) | 2009-08-01 |
CN100573813C (en) | 2009-12-23 |
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