SU1702831A1 - Avalanche optical detector - Google Patents
Avalanche optical detectorInfo
- Publication number
- SU1702831A1 SU1702831A1 SU4747595/25A SU4747595A SU1702831A1 SU 1702831 A1 SU1702831 A1 SU 1702831A1 SU 4747595/25 A SU4747595/25 A SU 4747595/25A SU 4747595 A SU4747595 A SU 4747595A SU 1702831 A1 SU1702831 A1 SU 1702831A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- buffer
- substrate
- semiconductor
- regions
- buffer layer
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
Abstract
FIELD: semiconductor optical detectors. SUBSTANCE: avalanche optical detector contains semiconductor substrate, at least two semiconductor regions with conduction type opposite to that of substrate, buffer layer, and field electrode. Semiconductor regions are separated from field electrode by buffer regions located in buffer layer. In this case, the following condition is observed: σ+σ<σ+σwhere σand σare conductivities of depleted layer on substrate/ semiconductor region and substrate/buffer layer interfaces, respectively, and σand σare conductivities of buffer regions and buffer layer, respectively. Distance between the semiconductor regions is no less than thickness of buffer layer but no greater than double sum of maximal thickness of depleted layer upon avalanche breakage and diffusion length of secondary charge carrier in the substrate. Use of buffer regions increases operation stability, because final resistance of buffer region restricts sharp course of avalanche process. EFFECT: improved stability and increased signal to noise relation. 1 dwg
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4747595/25A SU1702831A1 (en) | 1989-10-11 | 1989-10-11 | Avalanche optical detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4747595/25A SU1702831A1 (en) | 1989-10-11 | 1989-10-11 | Avalanche optical detector |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1702831A1 true SU1702831A1 (en) | 1997-06-27 |
Family
ID=60532235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU4747595/25A SU1702831A1 (en) | 1989-10-11 | 1989-10-11 | Avalanche optical detector |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1702831A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5844291A (en) * | 1996-12-20 | 1998-12-01 | Board Of Regents, The University Of Texas System | Wide wavelength range high efficiency avalanche light detector with negative feedback |
US5880490A (en) * | 1997-07-28 | 1999-03-09 | Board Of Regents, The University Of Texas System | Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation |
WO2000017940A1 (en) * | 1998-09-18 | 2000-03-30 | Viktor Mikhailovich Golovin | Avalanche photodetector |
US6885827B2 (en) | 2002-07-30 | 2005-04-26 | Amplification Technologies, Inc. | High sensitivity, high resolution detection of signals |
WO2007139451A1 (en) | 2006-06-01 | 2007-12-06 | Zecotek Medical Systems Singapore Pte. Ltd. | Microchannel avalanche photodiode |
WO2007145546A1 (en) * | 2006-06-08 | 2007-12-21 | Bronya Tsoi | Photoconverter |
RU2528107C1 (en) * | 2013-04-16 | 2014-09-10 | Зираддин Ягуб оглы Садыгов | Semiconductor avalanche detector |
RU2770147C1 (en) * | 2021-06-21 | 2022-04-14 | Садыгов Зираддин Ягуб оглы | Micropixel avalanche photodiode |
-
1989
- 1989-10-11 SU SU4747595/25A patent/SU1702831A1/en active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5844291A (en) * | 1996-12-20 | 1998-12-01 | Board Of Regents, The University Of Texas System | Wide wavelength range high efficiency avalanche light detector with negative feedback |
US6353238B2 (en) | 1996-12-20 | 2002-03-05 | Board Of Regents, The University Of Texas System | Method of using a wide wavelength range high efficiency avalanche light detector with negative feedback |
US5880490A (en) * | 1997-07-28 | 1999-03-09 | Board Of Regents, The University Of Texas System | Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation |
WO2000017940A1 (en) * | 1998-09-18 | 2000-03-30 | Viktor Mikhailovich Golovin | Avalanche photodetector |
US6885827B2 (en) | 2002-07-30 | 2005-04-26 | Amplification Technologies, Inc. | High sensitivity, high resolution detection of signals |
US7085502B2 (en) | 2002-07-30 | 2006-08-01 | Amplification Technologies, Inc. | High sensitivity, high resolution detection of signals |
WO2007139451A1 (en) | 2006-06-01 | 2007-12-06 | Zecotek Medical Systems Singapore Pte. Ltd. | Microchannel avalanche photodiode |
WO2007145546A1 (en) * | 2006-06-08 | 2007-12-21 | Bronya Tsoi | Photoconverter |
EA013788B1 (en) * | 2006-06-08 | 2010-06-30 | ЦОЙ, Броня | Photoconverter |
RU2528107C1 (en) * | 2013-04-16 | 2014-09-10 | Зираддин Ягуб оглы Садыгов | Semiconductor avalanche detector |
RU2770147C1 (en) * | 2021-06-21 | 2022-04-14 | Садыгов Зираддин Ягуб оглы | Micropixel avalanche photodiode |
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