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JPS53132274A - Semiconductor device and its production - Google Patents

Semiconductor device and its production

Info

Publication number
JPS53132274A
JPS53132274A JP4707477A JP4707477A JPS53132274A JP S53132274 A JPS53132274 A JP S53132274A JP 4707477 A JP4707477 A JP 4707477A JP 4707477 A JP4707477 A JP 4707477A JP S53132274 A JPS53132274 A JP S53132274A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type
junction
broaden
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4707477A
Other languages
Japanese (ja)
Inventor
Kenji Tokuyama
Keiichi Shimakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4707477A priority Critical patent/JPS53132274A/en
Publication of JPS53132274A publication Critical patent/JPS53132274A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the PN junction capacity to a great extent by implanting ions of opposite conductivity type to the substrate in the semiconductor substrate region right beneath the PN junction and providing a P type or N type low impurity concentration region so as to broaden the depletion layer.
JP4707477A 1977-04-22 1977-04-22 Semiconductor device and its production Pending JPS53132274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4707477A JPS53132274A (en) 1977-04-22 1977-04-22 Semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4707477A JPS53132274A (en) 1977-04-22 1977-04-22 Semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS53132274A true JPS53132274A (en) 1978-11-17

Family

ID=12765011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4707477A Pending JPS53132274A (en) 1977-04-22 1977-04-22 Semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS53132274A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903086A (en) * 1988-01-19 1990-02-20 E-Systems, Inc. Varactor tuning diode with inversion layer
WO2010071084A1 (en) * 2008-12-16 2010-06-24 住友電気工業株式会社 Semiconductor device and manufacturing method therefor
EP3021359A1 (en) * 2014-11-13 2016-05-18 MediaTek, Inc Electrostatic discharge (esd) protection device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100080A (en) * 1972-03-29 1973-12-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100080A (en) * 1972-03-29 1973-12-18

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903086A (en) * 1988-01-19 1990-02-20 E-Systems, Inc. Varactor tuning diode with inversion layer
WO2010071084A1 (en) * 2008-12-16 2010-06-24 住友電気工業株式会社 Semiconductor device and manufacturing method therefor
JP2010166024A (en) * 2008-12-16 2010-07-29 Sumitomo Electric Ind Ltd Semiconductor device, and method for manufacturing the same
US8643065B2 (en) 2008-12-16 2014-02-04 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same
EP3021359A1 (en) * 2014-11-13 2016-05-18 MediaTek, Inc Electrostatic discharge (esd) protection device
US9666576B2 (en) 2014-11-13 2017-05-30 Mediatek Inc. Electrostatic discharge (ESD) protection device
US10236285B2 (en) 2014-11-13 2019-03-19 Mediatek Inc. Electrostatic discharge (ESD) protection device

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