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SG11201901798PA - Low-noise amplifier having programmable-phase gain stage - Google Patents

Low-noise amplifier having programmable-phase gain stage

Info

Publication number
SG11201901798PA
SG11201901798PA SG11201901798PA SG11201901798PA SG11201901798PA SG 11201901798P A SG11201901798P A SG 11201901798PA SG 11201901798P A SG11201901798P A SG 11201901798PA SG 11201901798P A SG11201901798P A SG 11201901798PA SG 11201901798P A SG11201901798P A SG 11201901798PA
Authority
SG
Singapore
Prior art keywords
programmable
low
noise amplifier
gain stage
phase gain
Prior art date
Application number
SG11201901798PA
Inventor
Junhyung Lee
Johannes Jacobus Emile Maria Hageraats
Joshua Haeseok Cho
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG11201901798PA publication Critical patent/SG11201901798PA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/213—A variable capacitor being added in the input circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
SG11201901798PA 2016-08-30 2017-08-28 Low-noise amplifier having programmable-phase gain stage SG11201901798PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662381353P 2016-08-30 2016-08-30
PCT/US2017/048902 WO2018044793A1 (en) 2016-08-30 2017-08-28 Low-noise amplifier having programmable-phase gain stage

Publications (1)

Publication Number Publication Date
SG11201901798PA true SG11201901798PA (en) 2019-03-28

Family

ID=61240784

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901798PA SG11201901798PA (en) 2016-08-30 2017-08-28 Low-noise amplifier having programmable-phase gain stage

Country Status (9)

Country Link
US (3) US10476460B2 (en)
JP (1) JP6853361B2 (en)
KR (1) KR102505126B1 (en)
CN (1) CN109863694B (en)
DE (1) DE112017004372T5 (en)
GB (1) GB2576805B (en)
SG (1) SG11201901798PA (en)
TW (3) TWI801111B (en)
WO (1) WO2018044793A1 (en)

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US10772052B2 (en) * 2017-06-16 2020-09-08 Qualcomm Incorporated Controlling coexistent radio systems in a wireless device
CN113131872A (en) * 2019-12-31 2021-07-16 深圳市大富科技股份有限公司 Compensation circuit and communication circuit
US11804435B2 (en) 2020-01-03 2023-10-31 Skyworks Solutions, Inc. Semiconductor-on-insulator transistor layout for radio frequency power amplifiers
US11595008B2 (en) 2020-01-09 2023-02-28 Skyworks Solutions, Inc. Low noise amplifiers with low noise figure
US12107548B2 (en) * 2020-05-12 2024-10-01 Richwave Technology Corp. Amplifier circuit
US11811438B2 (en) 2020-08-21 2023-11-07 Skyworks Solutions, Inc. Systems and methods for magnitude and phase trimming
US11817829B2 (en) 2021-01-29 2023-11-14 Skyworks Solutions, Inc. Multi-mode broadband low noise amplifier
US20230188099A1 (en) * 2021-12-13 2023-06-15 Psemi Corporation Nonlinearity management in lna bypass mode
CN114244290A (en) * 2021-12-20 2022-03-25 上海迦美信芯通讯技术有限公司 Circuit for improving linearity of low noise amplifier by adopting multi-amplifier tube array

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JP3574546B2 (en) * 1997-05-16 2004-10-06 日本電信電話株式会社 High frequency variable gain amplifier
WO2002015391A1 (en) * 2000-08-11 2002-02-21 The National University Of Singapore Programmable radio frequency predistortion linearizer and method thereof
US6636119B2 (en) * 2000-12-21 2003-10-21 Koninklijke Philips Electronics N.V. Compact cascode radio frequency CMOS power amplifier
KR100544958B1 (en) * 2003-12-10 2006-01-24 한국전자통신연구원 Low noise amplifier with variable matching network
US20070218850A1 (en) * 2004-10-08 2007-09-20 Jianping Pan Integrated Tuner for Terrestrial and Cable Television
US7358816B2 (en) * 2004-11-11 2008-04-15 Samsung Electronics Co., Ltd. Variable gain amplifier
KR100708117B1 (en) * 2004-11-11 2007-04-16 삼성전자주식회사 Variable gain amplifier
KR100644273B1 (en) * 2004-12-21 2006-11-10 한국전자통신연구원 Low noise amplifier of wide-band tunable matching
US7474158B1 (en) * 2006-04-10 2009-01-06 Rf Micro Devices, Inc. Dynamic match low noise amplifier with reduced current consumption in low gain mode
US7420425B2 (en) * 2006-09-28 2008-09-02 Via Technologies, Inc. Power amplifier and method thereof
KR100732070B1 (en) * 2007-03-07 2007-06-27 (주)에프씨아이 Low noise amplifier with variable gain
US7486135B2 (en) * 2007-05-29 2009-02-03 Telefonaktiebolaget Lm Ericsson (Publ) Configurable, variable gain LNA for multi-band RF receiver
US20090027119A1 (en) * 2007-07-25 2009-01-29 Pulsewave Rf, Inc. Reduced distortion radio frequency amplifiers
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ITVI20120280A1 (en) 2012-10-22 2014-04-23 Cartigliano Off Spa GENERATOR DEVICE FOR AN ALTERNATED ELECTROMAGNETIC FIELD IN RADIO FREQUENCY, METHOD OF CONTROL AND USING SYSTEM OF THIS DEVICE
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Also Published As

Publication number Publication date
TW202230962A (en) 2022-08-01
TWI756258B (en) 2022-03-01
JP6853361B2 (en) 2021-03-31
JP2019532595A (en) 2019-11-07
GB2576805B (en) 2022-06-15
GB2576805A (en) 2020-03-04
DE112017004372T5 (en) 2019-05-09
KR20190047709A (en) 2019-05-08
US11183984B2 (en) 2021-11-23
US10476460B2 (en) 2019-11-12
KR102505126B1 (en) 2023-03-02
TW202324910A (en) 2023-06-16
TWI801111B (en) 2023-05-01
GB201904331D0 (en) 2019-05-15
TW201824737A (en) 2018-07-01
CN109863694A (en) 2019-06-07
US20220158599A1 (en) 2022-05-19
CN109863694B (en) 2023-08-08
WO2018044793A1 (en) 2018-03-08
US20180062599A1 (en) 2018-03-01
US20200153403A1 (en) 2020-05-14

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