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SG11201604437RA - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
SG11201604437RA
SG11201604437RA SG11201604437RA SG11201604437RA SG11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA SG 11201604437R A SG11201604437R A SG 11201604437RA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
bonding
wire
semiconductor
Prior art date
Application number
SG11201604437RA
Inventor
Daizo Oda
Motoki Eto
Takashi Yamada
Teruo Haibara
Ryo Oishi
Tomohiro Uno
Tetsuya Oyamada
Original Assignee
Nippon Micrometal Corp
Nippon Steel & Sumikin Mat Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Micrometal Corp, Nippon Steel & Sumikin Mat Co filed Critical Nippon Micrometal Corp
Publication of SG11201604437RA publication Critical patent/SG11201604437RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
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SG11201604437RA 2015-02-26 2015-06-05 Bonding wire for semiconductor device SG11201604437RA (en)

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JP6452661B2 (en) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 Bonding wires for semiconductor devices
DE112018000061B4 (en) * 2017-02-22 2021-12-09 Nippon Micrometal Corporation Bond wire for semiconductor components
JP6371932B1 (en) * 2017-02-22 2018-08-08 新日鉄住金マテリアルズ株式会社 Bonding wires for semiconductor devices
CN111033706B (en) * 2017-08-09 2021-05-25 日铁化学材料株式会社 Cu alloy bonding wire for semiconductor device
JP7036838B2 (en) * 2017-12-28 2022-03-15 日鉄マイクロメタル株式会社 Bonding wire for semiconductor devices
CN109411437A (en) * 2018-09-14 2019-03-01 汕头市骏码凯撒有限公司 A kind of silver alloy wire and preparation method thereof with surface recombination film
JP6507329B1 (en) * 2019-02-08 2019-04-24 田中電子工業株式会社 Palladium-coated copper bonding wire, wire bonding structure, semiconductor device, and method of manufacturing semiconductor device
CN113825849B (en) * 2019-06-04 2024-02-13 田中电子工业株式会社 Palladium-covered copper bonding wire, method for manufacturing palladium-covered copper bonding wire, semiconductor device using same, and method for manufacturing semiconductor device
WO2021205674A1 (en) * 2020-04-10 2021-10-14 田中電子工業株式会社 Gold-coated bonding wire, manufacturing method therefor, semiconductor wire bonding structure, and semiconductor device
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KR20240015610A (en) * 2021-06-25 2024-02-05 닛데쓰마이크로메탈가부시키가이샤 Bonding wire for semiconductor device

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MY160982A (en) 2017-03-31
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CN107041160B (en) 2018-10-02

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