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SG11201503673XA - Sintered compact sputtering target - Google Patents

Sintered compact sputtering target

Info

Publication number
SG11201503673XA
SG11201503673XA SG11201503673XA SG11201503673XA SG11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA
Authority
SG
Singapore
Prior art keywords
sputtering target
sintered compact
compact sputtering
sintered
target
Prior art date
Application number
SG11201503673XA
Inventor
Yuki Ikeda
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201503673XA publication Critical patent/SG11201503673XA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/07Alloys based on nickel or cobalt based on cobalt
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/0433Nickel- or cobalt-based alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0005Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with at least one oxide and at least one of carbides, nitrides, borides or silicides as the main non-metallic constituents
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183Sputtering targets therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
SG11201503673XA 2012-12-18 2013-12-09 Sintered compact sputtering target SG11201503673XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012275288 2012-12-18
PCT/JP2013/082917 WO2014097911A1 (en) 2012-12-18 2013-12-09 Sintered sputtering target

Publications (1)

Publication Number Publication Date
SG11201503673XA true SG11201503673XA (en) 2015-06-29

Family

ID=50978246

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503673XA SG11201503673XA (en) 2012-12-18 2013-12-09 Sintered compact sputtering target

Country Status (5)

Country Link
JP (1) JP5960287B2 (en)
MY (1) MY170489A (en)
SG (1) SG11201503673XA (en)
TW (1) TWI583813B (en)
WO (1) WO2014097911A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150135530A (en) * 2013-04-30 2015-12-02 가부시키가이샤 코베루코 카겐 Li-CONTAINING OXIDE TARGET ASSEMBLY
CN110234789B (en) * 2017-02-01 2021-05-28 出光兴产株式会社 Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target
TWI671418B (en) * 2017-09-21 2019-09-11 日商Jx金屬股份有限公司 Sputtering target, manufacturing method of laminated film, laminated film and magnetic recording medium
JP7116782B2 (en) * 2018-03-28 2022-08-10 Jx金属株式会社 Perpendicular magnetic recording medium
JP7189520B2 (en) * 2018-03-30 2022-12-14 田中貴金属工業株式会社 sputtering target
JP2021178748A (en) * 2020-05-12 2021-11-18 株式会社コベルコ科研 Method for producing sintered body and method for producing sputtering target

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000096220A (en) * 1998-09-21 2000-04-04 Hitachi Metals Ltd Cobalt-chromium sputtering target and its manufacture
JP2000104160A (en) * 1998-09-29 2000-04-11 Hitachi Metals Ltd Cobalt-chromium target for ground coat, and its manufacture
JP2002363615A (en) * 2002-03-20 2002-12-18 Sanyo Special Steel Co Ltd METHOD FOR MANUFACTURING Co-TYPE SPUTTERING TARGET MATERIAL WITH LOW MAGNETIC PERMEABILITY FOR MAGNETIC RECORDING MEDIUM
JPWO2010074171A1 (en) * 2008-12-26 2012-06-21 三井金属鉱業株式会社 Sputtering target and film forming method
JP2010189751A (en) * 2009-02-20 2010-09-02 Hitachi Metals Ltd METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL OF Co-Cr BASED ALLOY
JP4422203B1 (en) * 2009-04-01 2010-02-24 Tanakaホールディングス株式会社 Magnetron sputtering target and method for manufacturing the same
CN103270190B (en) * 2010-12-22 2016-01-20 吉坤日矿日石金属株式会社 Sinter sputtering target

Also Published As

Publication number Publication date
WO2014097911A1 (en) 2014-06-26
TWI583813B (en) 2017-05-21
JP5960287B2 (en) 2016-08-02
MY170489A (en) 2019-08-07
JPWO2014097911A1 (en) 2017-01-12
TW201428122A (en) 2014-07-16

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