SG11201503673XA - Sintered compact sputtering target - Google Patents
Sintered compact sputtering targetInfo
- Publication number
- SG11201503673XA SG11201503673XA SG11201503673XA SG11201503673XA SG11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA SG 11201503673X A SG11201503673X A SG 11201503673XA
- Authority
- SG
- Singapore
- Prior art keywords
- sputtering target
- sintered compact
- compact sputtering
- sintered
- target
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0433—Nickel- or cobalt-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0005—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with at least one oxide and at least one of carbides, nitrides, borides or silicides as the main non-metallic constituents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012275288 | 2012-12-18 | ||
PCT/JP2013/082917 WO2014097911A1 (en) | 2012-12-18 | 2013-12-09 | Sintered sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201503673XA true SG11201503673XA (en) | 2015-06-29 |
Family
ID=50978246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201503673XA SG11201503673XA (en) | 2012-12-18 | 2013-12-09 | Sintered compact sputtering target |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5960287B2 (en) |
MY (1) | MY170489A (en) |
SG (1) | SG11201503673XA (en) |
TW (1) | TWI583813B (en) |
WO (1) | WO2014097911A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150135530A (en) * | 2013-04-30 | 2015-12-02 | 가부시키가이샤 코베루코 카겐 | Li-CONTAINING OXIDE TARGET ASSEMBLY |
CN110234789B (en) * | 2017-02-01 | 2021-05-28 | 出光兴产株式会社 | Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target |
TWI671418B (en) * | 2017-09-21 | 2019-09-11 | 日商Jx金屬股份有限公司 | Sputtering target, manufacturing method of laminated film, laminated film and magnetic recording medium |
JP7116782B2 (en) * | 2018-03-28 | 2022-08-10 | Jx金属株式会社 | Perpendicular magnetic recording medium |
JP7189520B2 (en) * | 2018-03-30 | 2022-12-14 | 田中貴金属工業株式会社 | sputtering target |
JP2021178748A (en) * | 2020-05-12 | 2021-11-18 | 株式会社コベルコ科研 | Method for producing sintered body and method for producing sputtering target |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000096220A (en) * | 1998-09-21 | 2000-04-04 | Hitachi Metals Ltd | Cobalt-chromium sputtering target and its manufacture |
JP2000104160A (en) * | 1998-09-29 | 2000-04-11 | Hitachi Metals Ltd | Cobalt-chromium target for ground coat, and its manufacture |
JP2002363615A (en) * | 2002-03-20 | 2002-12-18 | Sanyo Special Steel Co Ltd | METHOD FOR MANUFACTURING Co-TYPE SPUTTERING TARGET MATERIAL WITH LOW MAGNETIC PERMEABILITY FOR MAGNETIC RECORDING MEDIUM |
JPWO2010074171A1 (en) * | 2008-12-26 | 2012-06-21 | 三井金属鉱業株式会社 | Sputtering target and film forming method |
JP2010189751A (en) * | 2009-02-20 | 2010-09-02 | Hitachi Metals Ltd | METHOD FOR MANUFACTURING SPUTTERING TARGET MATERIAL OF Co-Cr BASED ALLOY |
JP4422203B1 (en) * | 2009-04-01 | 2010-02-24 | Tanakaホールディングス株式会社 | Magnetron sputtering target and method for manufacturing the same |
CN103270190B (en) * | 2010-12-22 | 2016-01-20 | 吉坤日矿日石金属株式会社 | Sinter sputtering target |
-
2013
- 2013-12-09 WO PCT/JP2013/082917 patent/WO2014097911A1/en active Application Filing
- 2013-12-09 MY MYPI2015701869A patent/MY170489A/en unknown
- 2013-12-09 SG SG11201503673XA patent/SG11201503673XA/en unknown
- 2013-12-09 JP JP2014553077A patent/JP5960287B2/en active Active
- 2013-12-12 TW TW102145830A patent/TWI583813B/en active
Also Published As
Publication number | Publication date |
---|---|
WO2014097911A1 (en) | 2014-06-26 |
TWI583813B (en) | 2017-05-21 |
JP5960287B2 (en) | 2016-08-02 |
MY170489A (en) | 2019-08-07 |
JPWO2014097911A1 (en) | 2017-01-12 |
TW201428122A (en) | 2014-07-16 |
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