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SG11201403570VA - High-purity copper sputtering target - Google Patents

High-purity copper sputtering target

Info

Publication number
SG11201403570VA
SG11201403570VA SG11201403570VA SG11201403570VA SG11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA
Authority
SG
Singapore
Prior art keywords
sputtering target
purity copper
copper sputtering
purity
target
Prior art date
Application number
SG11201403570VA
Inventor
Takeo Okabe
Tomio Otsuki
Shigeru Watanabe
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201403570VA publication Critical patent/SG11201403570VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG11201403570VA 2012-01-12 2012-12-25 High-purity copper sputtering target SG11201403570VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012003781 2012-01-12
PCT/JP2012/083396 WO2013105424A1 (en) 2012-01-12 2012-12-25 High-purity copper sputtering target

Publications (1)

Publication Number Publication Date
SG11201403570VA true SG11201403570VA (en) 2014-09-26

Family

ID=48781382

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403570VA SG11201403570VA (en) 2012-01-12 2012-12-25 High-purity copper sputtering target

Country Status (8)

Country Link
US (1) US9773651B2 (en)
EP (1) EP2784174B1 (en)
JP (1) JP5747091B2 (en)
KR (1) KR101645834B1 (en)
CN (1) CN104053814B (en)
SG (1) SG11201403570VA (en)
TW (1) TW201335402A (en)
WO (1) WO2013105424A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG2014009989A (en) 2011-09-30 2014-04-28 Jx Nippon Mining & Metals Corp Sputtering target and manufacturing method therefor
WO2016153090A1 (en) * 2015-03-23 2016-09-29 부산대학교 산학협력단 Method for preparing copper thin film by using single crystal copper target
TWI663274B (en) * 2017-03-30 2019-06-21 日商Jx金屬股份有限公司 Sputtering target and manufacturing method thereof
JP6533265B2 (en) * 2017-03-30 2019-06-19 住友化学株式会社 Equipment for cleaning of target material
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
CN111989421B (en) 2018-05-21 2022-12-06 株式会社爱发科 Sputtering target and method for producing same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69102851T2 (en) * 1990-10-09 1995-02-16 Nippon Electric Co Process for the production of a Ti / TiN / Al contact using a reactive sputtering process.
JP2857015B2 (en) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー Sputtering target made of high-purity aluminum or its alloy
JP3403918B2 (en) * 1997-06-02 2003-05-06 株式会社ジャパンエナジー High purity copper sputtering target and thin film
TW408351B (en) 1997-10-17 2000-10-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2001107227A (en) 1999-10-08 2001-04-17 Kojundo Chem Lab Co Ltd Method for producing integrated structure type sputtering target
US20040072009A1 (en) 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
JP2002121662A (en) 2000-04-07 2002-04-26 Kojundo Chem Lab Co Ltd Integral sputtering target
US6605199B2 (en) 2001-11-14 2003-08-12 Praxair S.T. Technology, Inc. Textured-metastable aluminum alloy sputter targets and method of manufacture
US6896748B2 (en) 2002-07-18 2005-05-24 Praxair S.T. Technology, Inc. Ultrafine-grain-copper-base sputter targets
US20040016635A1 (en) 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
WO2006103833A1 (en) 2005-03-28 2006-10-05 Nippon Mining & Metals Co., Ltd. Deep-pot-shaped copper sputtering target and process for producing the same
JP5140935B2 (en) 2006-03-28 2013-02-13 富士通セミコンダクター株式会社 Magnetron sputtering film forming apparatus and semiconductor device manufacturing method
US20070251818A1 (en) 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
KR101290856B1 (en) 2008-09-30 2013-07-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 High-purity copper or high-purity copper alloy sputtering target and process for manufacturing the sputtering target
WO2010085316A1 (en) * 2009-01-22 2010-07-29 Tosoh Smd, Inc. Monolithic aluminum alloy target and method of manufacturing
JP5491845B2 (en) 2009-12-16 2014-05-14 株式会社Shカッパープロダクツ Sputtering target material
SG2014009989A (en) 2011-09-30 2014-04-28 Jx Nippon Mining & Metals Corp Sputtering target and manufacturing method therefor
KR20150126376A (en) 2013-09-12 2015-11-11 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Metallic sputtering target integrated with backing plate, and method for manufacturing same

Also Published As

Publication number Publication date
CN104053814A (en) 2014-09-17
US9773651B2 (en) 2017-09-26
JPWO2013105424A1 (en) 2015-05-11
EP2784174A1 (en) 2014-10-01
KR20140105867A (en) 2014-09-02
KR101645834B1 (en) 2016-08-04
TWI560290B (en) 2016-12-01
EP2784174B1 (en) 2017-11-01
EP2784174A4 (en) 2015-06-24
WO2013105424A1 (en) 2013-07-18
CN104053814B (en) 2016-08-24
JP5747091B2 (en) 2015-07-08
TW201335402A (en) 2013-09-01
US20140367253A1 (en) 2014-12-18

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