SG11201404314WA - Magnetic material sputtering target and manufacturing method for same - Google Patents
Magnetic material sputtering target and manufacturing method for sameInfo
- Publication number
- SG11201404314WA SG11201404314WA SG11201404314WA SG11201404314WA SG11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- same
- magnetic material
- sputtering target
- material sputtering
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012036562 | 2012-02-22 | ||
| PCT/JP2013/053753 WO2013125469A1 (en) | 2012-02-22 | 2013-02-15 | Magnetic material sputtering target and manufacturing method for same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201404314WA true SG11201404314WA (en) | 2014-10-30 |
Family
ID=49005655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201404314WA SG11201404314WA (en) | 2012-02-22 | 2013-02-15 | Magnetic material sputtering target and manufacturing method for same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9761422B2 (en) |
| JP (1) | JP5829747B2 (en) |
| CN (1) | CN104145042B (en) |
| MY (1) | MY169053A (en) |
| SG (1) | SG11201404314WA (en) |
| TW (1) | TW201400630A (en) |
| WO (1) | WO2013125469A1 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5032706B2 (en) | 2010-07-29 | 2012-09-26 | Ｊｘ日鉱日石金属株式会社 | Sputtering target for magnetic recording film and manufacturing method thereof |
| MY173543A (en) * | 2012-02-23 | 2020-02-04 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target containing chromium oxide |
| KR20160075723A (en) | 2013-11-28 | 2016-06-29 | 제이엑스금속주식회사 | Magnetic material sputtering target and method for producing same |
| WO2016013334A1 (en) * | 2014-07-25 | 2016-01-28 | Jx日鉱日石金属株式会社 | Sputtering target for forming magnetic thin film |
| JP6366095B2 (en) * | 2014-07-29 | 2018-08-01 | 株式会社フルヤ金属 | Sputtering target for magnetic recording media |
| JP6504605B2 (en) * | 2015-11-27 | 2019-04-24 | 田中貴金属工業株式会社 | Sputtering target |
| US11837450B2 (en) | 2016-02-19 | 2023-12-05 | Jx Metals Corporation | Sputtering target for magnetic recording medium, and magnetic thin film |
| US10837101B2 (en) | 2016-03-31 | 2020-11-17 | Jx Nippon Mining & Metals Corporation | Ferromagnetic material sputtering target |
| JP2017224371A (en) * | 2016-06-15 | 2017-12-21 | 昭和電工株式会社 | Magnetic recording medium and magnetic storage device |
| SG11201903240PA (en) * | 2016-12-28 | 2019-05-30 | Jx Nippon Mining & Metals Corp | Magnetic material sputtering target and method for manufacturing same |
| JP6971901B2 (en) * | 2018-03-27 | 2021-11-24 | Ｊｘ金属株式会社 | Sputtering target |
| CN110004421A (en) * | 2019-03-31 | 2019-07-12 | 柳州呈奥科技有限公司 | A kind of ferro-cobalt niobium base target and its processing technology |
| JP7317741B2 (en) * | 2020-02-07 | 2023-07-31 | Ｊｘ金属株式会社 | Sputtering targets, magnetic films, and mixed raw material powders for making sputtering targets |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991018125A1 (en) * | 1990-05-15 | 1991-11-28 | Kabushiki Kaisha Toshiba | Sputtering target and production thereof |
| JP3816595B2 (en) | 1996-09-18 | 2006-08-30 | 三井金属鉱業株式会社 | Manufacturing method of sputtering target |
| JP2000234168A (en) * | 1998-12-07 | 2000-08-29 | Japan Energy Corp | Sputtering target for forming optical disk protective film |
| JP2001076329A (en) | 1999-09-07 | 2001-03-23 | Fuji Electric Co Ltd | Magnetic recording medium and its production |
| US20070189916A1 (en) | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
| WO2005083148A1 (en) | 2004-03-01 | 2005-09-09 | Nippon Mining & Metals Co., Ltd. | Sputtering target with few surface defects and method for processing surface thereof |
| JP2005272946A (en) * | 2004-03-25 | 2005-10-06 | Sumitomo Metal Mining Co Ltd | Combined sintered target material for dielectric film and method for manufacturing the same |
| JP4422574B2 (en) | 2004-07-30 | 2010-02-24 | 三井金属鉱業株式会社 | Sputtering target material comprising ceramic-metal composite material and method for producing the same |
| JP2006127621A (en) | 2004-10-28 | 2006-05-18 | Hitachi Global Storage Technologies Netherlands Bv | Vertical magnetic recording medium and method of manufacturing the same |
| US20060289294A1 (en) | 2005-06-24 | 2006-12-28 | Heraeus, Inc. | Enhanced oxygen non-stoichiometry compensation for thin films |
| WO2007080781A1 (en) | 2006-01-13 | 2007-07-19 | Nippon Mining & Metals Co., Ltd. | Nonmagnetic material particle dispersed ferromagnetic material sputtering target |
| JP5024661B2 (en) | 2007-03-26 | 2012-09-12 | 三菱マテリアル株式会社 | Co-based sintered alloy sputtering target for magnetic recording film formation with less generation of particles |
| JP2009001860A (en) | 2007-06-21 | 2009-01-08 | Mitsubishi Materials Corp | Sputtering target for use in forming film of perpendicular magnetic recording medium having low relative magnetic permeability |
| JP5204460B2 (en) * | 2007-10-24 | 2013-06-05 | 三井金属鉱業株式会社 | Sputtering target for magnetic recording film and manufacturing method thereof |
| JP2009215617A (en) | 2008-03-11 | 2009-09-24 | Mitsui Mining & Smelting Co Ltd | Sputtering target material containing cobalt, chromium, and platinum matrix phase and oxide phase and method for producing the same |
| US8568576B2 (en) | 2008-03-28 | 2013-10-29 | Jx Nippon Mining & Metals Corporation | Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material |
| WO2010101051A1 (en) | 2009-03-03 | 2010-09-10 | 日鉱金属株式会社 | Sputtering target and process for producing same |
| JP4673448B2 (en) | 2009-03-27 | 2011-04-20 | Ｊｘ日鉱日石金属株式会社 | Non-magnetic particle dispersed ferromagnetic sputtering target |
| MY148731A (en) | 2009-08-06 | 2013-05-31 | Jx Nippon Mining & Metals Corp | Inorganic-particle-dispersed sputtering target |
| MY149640A (en) | 2009-12-11 | 2013-09-13 | Jx Nippon Mining & Metals Corp | Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film |
| WO2011077933A1 (en) | 2009-12-25 | 2011-06-30 | Jx日鉱日石金属株式会社 | Sputtering target with reduced particle generation and method for producing the sputtering target |
| WO2011089760A1 (en) | 2010-01-21 | 2011-07-28 | Jx日鉱日石金属株式会社 | Ferromagnetic-material sputtering target |
| WO2011102359A1 (en) * | 2010-02-19 | 2011-08-25 | Jx日鉱日石金属株式会社 | Sputtering target-backing plate assembly body |
| JP5240228B2 (en) | 2010-04-09 | 2013-07-17 | Ｔｄｋ株式会社 | Sputtering target and method for manufacturing perpendicular magnetic recording medium |
| JP5536540B2 (en) * | 2010-05-26 | 2014-07-02 | 昭和電工株式会社 | Magnetic recording medium and magnetic recording / reproducing apparatus |
| MY157156A (en) * | 2010-07-20 | 2016-05-13 | Jx Nippon Mining & Metals Corp | Sputtering target of ferromagnetic material with low generation of particles |
| MY150826A (en) | 2010-07-20 | 2014-02-28 | Jx Nippon Mining & Metals Corp | Sputtering target of perromagnetic material with low generation of particles |
| JP5032706B2 (en) | 2010-07-29 | 2012-09-26 | Ｊｘ日鉱日石金属株式会社 | Sputtering target for magnetic recording film and manufacturing method thereof |
| CN103081009B (en) | 2010-08-31 | 2016-05-18 | 吉坤日矿日石金属株式会社 | Fe-Pt type ferromagnetic material sputtering target |
| WO2012029331A1 (en) | 2010-09-03 | 2012-03-08 | Jx日鉱日石金属株式会社 | Ferromagnetic material sputtering target |
| WO2012077665A1 (en) | 2010-12-09 | 2012-06-14 | Jx日鉱日石金属株式会社 | Ferromagnetic material sputtering target |
| SG188602A1 (en) | 2010-12-15 | 2013-04-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic sputtering target and method for manufacturing same |
| SG189257A1 (en) | 2010-12-17 | 2013-05-31 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film and method for producing same |
| MY161232A (en) | 2010-12-20 | 2017-04-14 | Jx Nippon Mining & Metals Corp | Fe-pt-based ferromagnetic sputtering target and method for producing same |
| MY156716A (en) | 2010-12-21 | 2016-03-15 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film and process for production thereof |
| CN103270190B (en) | 2010-12-22 | 2016-01-20 | 吉坤日矿日石金属株式会社 | Sinter sputtering target |
| WO2013027443A1 (en) | 2011-08-23 | 2013-02-28 | Jx日鉱日石金属株式会社 | Ferromagnetic sputtering target with minimized particle generation |
-
2013
- 2013-02-15 CN CN201380010378.3A patent/CN104145042B/en active Active
- 2013-02-15 SG SG11201404314WA patent/SG11201404314WA/en unknown
- 2013-02-15 JP JP2014500696A patent/JP5829747B2/en active Active
- 2013-02-15 WO PCT/JP2013/053753 patent/WO2013125469A1/en active Application Filing
- 2013-02-15 US US14/379,796 patent/US9761422B2/en active Active
- 2013-02-15 MY MYPI2014702133A patent/MY169053A/en unknown
- 2013-02-19 TW TW102105707A patent/TW201400630A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013125469A1 (en) | 2013-08-29 |
| CN104145042B (en) | 2016-08-24 |
| TWI560291B (en) | 2016-12-01 |
| CN104145042A (en) | 2014-11-12 |
| JPWO2013125469A1 (en) | 2015-07-30 |
| US9761422B2 (en) | 2017-09-12 |
| MY169053A (en) | 2019-02-11 |
| JP5829747B2 (en) | 2015-12-09 |
| TW201400630A (en) | 2014-01-01 |
| US20150021175A1 (en) | 2015-01-22 |
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