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SG11201401542YA - Magnetic material sputtering target and manufacturing method thereof - Google Patents

Magnetic material sputtering target and manufacturing method thereof

Info

Publication number
SG11201401542YA
SG11201401542YA SG11201401542YA SG11201401542YA SG11201401542YA SG 11201401542Y A SG11201401542Y A SG 11201401542YA SG 11201401542Y A SG11201401542Y A SG 11201401542YA SG 11201401542Y A SG11201401542Y A SG 11201401542YA SG 11201401542Y A SG11201401542Y A SG 11201401542YA
Authority
SG
Singapore
Prior art keywords
manufacturing
magnetic material
sputtering target
material sputtering
target
Prior art date
Application number
SG11201401542YA
Inventor
Shin-Ichi Ogino
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201401542YA publication Critical patent/SG11201401542YA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • B22F3/15Hot isostatic pressing
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
    • C04B35/6455Hot isostatic pressing
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/10Alloys containing non-metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/07Alloys based on nickel or cobalt based on cobalt
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0005Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with at least one oxide and at least one of carbides, nitrides, borides or silicides as the main non-metallic constituents
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0021Matrix based on noble metals, Cu or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026Matrix based on Ni, Co, Cr or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C33/00Making ferrous alloys
    • C22C33/02Making ferrous alloys by powder metallurgy
    • C22C33/0257Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
    • C22C33/0278Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements with at least one alloying element having a minimum content above 5%
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/002Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C2202/00Physical properties
    • C22C2202/02Magnetic
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/10Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
SG11201401542YA 2012-03-15 2013-02-26 Magnetic material sputtering target and manufacturing method thereof SG11201401542YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012059383 2012-03-15
PCT/JP2013/054849 WO2013136962A1 (en) 2012-03-15 2013-02-26 Magnetic material sputtering target and manufacturing method thereof

Publications (1)

Publication Number Publication Date
SG11201401542YA true SG11201401542YA (en) 2014-11-27

Family

ID=49160878

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401542YA SG11201401542YA (en) 2012-03-15 2013-02-26 Magnetic material sputtering target and manufacturing method thereof

Country Status (7)

Country Link
US (2) US9793099B2 (en)
JP (2) JP5876138B2 (en)
CN (2) CN104169457A (en)
MY (2) MY179242A (en)
SG (1) SG11201401542YA (en)
TW (2) TWI625408B (en)
WO (1) WO2013136962A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5032706B2 (en) 2010-07-29 2012-09-26 Jx日鉱日石金属株式会社 Sputtering target for magnetic recording film and manufacturing method thereof
MY179242A (en) * 2012-03-15 2020-11-02 Jx Nippon Mining & Metals Corp Magnetic material sintered sputtering target
CN104246882B (en) * 2012-08-31 2018-01-12 吉坤日矿日石金属株式会社 Fe base magnetic material sintered bodies
WO2016013334A1 (en) * 2014-07-25 2016-01-28 Jx日鉱日石金属株式会社 Sputtering target for forming magnetic thin film
US11837450B2 (en) 2016-02-19 2023-12-05 Jx Metals Corporation Sputtering target for magnetic recording medium, and magnetic thin film
SG11201805929XA (en) * 2016-02-19 2018-08-30 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording medium, and magnetic thin film
US10837101B2 (en) 2016-03-31 2020-11-17 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target
TWI684658B (en) * 2016-12-06 2020-02-11 光洋應用材料科技股份有限公司 Co-cr-pt-based alloy sputtering target and method of preparing the same
JP6858365B2 (en) * 2016-12-28 2021-04-14 Jx金属株式会社 Manufacturing method of gas flow sputtering equipment, gas flow sputtering target and sputtering target raw material
JP7005896B2 (en) * 2016-12-28 2022-01-24 Jx金属株式会社 Gas flow sputtering equipment and manufacturing method of sputtering target raw material
JP6377231B1 (en) * 2017-10-23 2018-08-22 デクセリアルズ株式会社 Mn—Zn—W—O-based sputtering target and method for producing the same
TWI702294B (en) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 Sputtering target for magnetic recording media
SG11202104923YA (en) 2018-11-16 2021-06-29 Arqule Inc Pharmaceutical combination for treatment of cancer
CN111636052A (en) * 2019-03-01 2020-09-08 宁波江丰电子材料股份有限公司 Preparation method of target material
CN113614281A (en) * 2019-03-20 2021-11-05 Jx金属株式会社 Sputtering target and method for producing sputtering target
US11424111B2 (en) * 2020-06-25 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited Sputtering target assembly to prevent overetch of backing plate and methods of using the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775414A (en) 1980-10-28 1982-05-12 Fuji Photo Film Co Ltd Manufacture of magneti substance thin film target for sputtering
US5478661A (en) 1993-04-01 1995-12-26 Ag Technology Co., Ltd. Magnetic recording medium and method for its production
KR0184725B1 (en) * 1993-07-27 1999-04-01 사토 후미오 High melting point metallic silicide target and method for producing the same, high melting point metallic silicide
JPH07311929A (en) 1994-03-22 1995-11-28 Asahi Komagu Kk Magnetic recording medium and its manufacture
JP3816595B2 (en) 1996-09-18 2006-08-30 三井金属鉱業株式会社 Manufacturing method of sputtering target
JP2001076329A (en) 1999-09-07 2001-03-23 Fuji Electric Co Ltd Magnetic recording medium and its production
JP2001098360A (en) 1999-09-24 2001-04-10 Hitachi Metals Ltd Co-Cr-Pt-C TARGET, ITS MANUFACTURE, AND MAGNETIC RECORDING MEDIUM
JP2001236643A (en) 2000-02-23 2001-08-31 Fuji Electric Co Ltd Sputtering target for manufacturing magnetic recording medium, method of manufacturing magnetic recording medium by using the same, and magnetic recording medium
US20030056928A1 (en) 2000-03-13 2003-03-27 Takashi Kubota Method for producing composite material and composite material produced thereby
JP2004014613A (en) 2002-06-04 2004-01-15 Mitsubishi Materials Corp PROCESS FOR PRODUCING Fe-Co BASED COMPOSITE SOFT MAGNETIC SINTERED ALLOY HAVING HIGH DENSITY AND HIGH PERMEABILITY
US20070189916A1 (en) 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
JP2004339586A (en) 2003-05-19 2004-12-02 Mitsubishi Materials Corp Sputtering target for forming magnetic recording film, and its production method
JP4422574B2 (en) 2004-07-30 2010-02-24 三井金属鉱業株式会社 Sputtering target material comprising ceramic-metal composite material and method for producing the same
JP2006127621A (en) 2004-10-28 2006-05-18 Hitachi Global Storage Technologies Netherlands Bv Vertical magnetic recording medium and method of manufacturing the same
US20060289294A1 (en) 2005-06-24 2006-12-28 Heraeus, Inc. Enhanced oxygen non-stoichiometry compensation for thin films
WO2007080781A1 (en) * 2006-01-13 2007-07-19 Nippon Mining & Metals Co., Ltd. Nonmagnetic material particle dispersed ferromagnetic material sputtering target
JP5024661B2 (en) 2007-03-26 2012-09-12 三菱マテリアル株式会社 Co-based sintered alloy sputtering target for magnetic recording film formation with less generation of particles
JP2009001860A (en) 2007-06-21 2009-01-08 Mitsubishi Materials Corp Sputtering target for use in forming film of perpendicular magnetic recording medium having low relative magnetic permeability
JP5204460B2 (en) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 Sputtering target for magnetic recording film and manufacturing method thereof
JP2009215617A (en) 2008-03-11 2009-09-24 Mitsui Mining & Smelting Co Ltd Sputtering target material containing cobalt, chromium, and platinum matrix phase and oxide phase and method for producing the same
US8568576B2 (en) 2008-03-28 2013-10-29 Jx Nippon Mining & Metals Corporation Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
JP5313792B2 (en) * 2008-07-17 2013-10-09 富士フイルム株式会社 Perovskite oxide, oxide composition, oxide body, piezoelectric element, and liquid ejection device
JP4528996B2 (en) * 2008-12-17 2010-08-25 田中貴金属工業株式会社 Method for recovering metal from target and method for manufacturing target
MY149640A (en) 2009-12-11 2013-09-13 Jx Nippon Mining & Metals Corp Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film
WO2011089760A1 (en) * 2010-01-21 2011-07-28 Jx日鉱日石金属株式会社 Ferromagnetic-material sputtering target
JP5240228B2 (en) 2010-04-09 2013-07-17 Tdk株式会社 Sputtering target and method for manufacturing perpendicular magnetic recording medium
CN103081009B (en) * 2010-08-31 2016-05-18 吉坤日矿日石金属株式会社 Fe-Pt type ferromagnetic material sputtering target
MY179242A (en) * 2012-03-15 2020-11-02 Jx Nippon Mining & Metals Corp Magnetic material sintered sputtering target

Also Published As

Publication number Publication date
JPWO2013136962A1 (en) 2015-08-03
TWI604079B (en) 2017-11-01
US20180005807A1 (en) 2018-01-04
TWI625408B (en) 2018-06-01
TW201402848A (en) 2014-01-16
CN106048545A (en) 2016-10-26
JP5976867B2 (en) 2016-08-24
MY168701A (en) 2018-11-29
TW201738403A (en) 2017-11-01
MY179242A (en) 2020-11-02
WO2013136962A1 (en) 2013-09-19
JP5876138B2 (en) 2016-03-02
US9793099B2 (en) 2017-10-17
JP2015172244A (en) 2015-10-01
US10325761B2 (en) 2019-06-18
US20140311902A1 (en) 2014-10-23
CN104169457A (en) 2014-11-26

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