[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

SE433021B - Termiskt och elektriskt ledande skyddsbuffert for en halvledaranordning - Google Patents

Termiskt och elektriskt ledande skyddsbuffert for en halvledaranordning

Info

Publication number
SE433021B
SE433021B SE7902586A SE7902586A SE433021B SE 433021 B SE433021 B SE 433021B SE 7902586 A SE7902586 A SE 7902586A SE 7902586 A SE7902586 A SE 7902586A SE 433021 B SE433021 B SE 433021B
Authority
SE
Sweden
Prior art keywords
buffer according
parts
copper
metal member
buffer
Prior art date
Application number
SE7902586A
Other languages
English (en)
Swedish (sv)
Other versions
SE7902586L (sv
Inventor
D E Houston
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7902586L publication Critical patent/SE7902586L/xx
Publication of SE433021B publication Critical patent/SE433021B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4922—Bases or plates or solder therefor having a heterogeneous or anisotropic structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
SE7902586A 1978-03-22 1979-03-22 Termiskt och elektriskt ledande skyddsbuffert for en halvledaranordning SE433021B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88910078A 1978-03-22 1978-03-22
US05/944,372 US4385310A (en) 1978-03-22 1978-09-21 Structured copper strain buffer

Publications (2)

Publication Number Publication Date
SE7902586L SE7902586L (sv) 1979-09-23
SE433021B true SE433021B (sv) 1984-04-30

Family

ID=27128904

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7902586A SE433021B (sv) 1978-03-22 1979-03-22 Termiskt och elektriskt ledande skyddsbuffert for en halvledaranordning

Country Status (8)

Country Link
US (1) US4385310A (de)
JP (1) JPS54148375A (de)
AR (1) AR216582A1 (de)
BR (1) BR7901763A (de)
DE (1) DE2910959C2 (de)
FR (1) FR2420845B1 (de)
GB (1) GB2017408B (de)
SE (1) SE433021B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement
JPS6142430B2 (de) * 1979-03-08 1986-09-20 Gen Electric
SE420964B (sv) * 1980-03-27 1981-11-09 Asea Ab Kompositmaterial och sett for dess framstellning
DE3031912A1 (de) * 1980-08-23 1982-04-01 Brown, Boveri & Cie Ag, 6800 Mannheim Anordnung zur potentialunabhaengigen waermeabfuehrung
US4574299A (en) * 1981-03-02 1986-03-04 General Electric Company Thyristor packaging system
US4481403A (en) * 1983-03-04 1984-11-06 Honeywell Inc. Temperature control of solid state circuit chips
US4949896A (en) * 1984-10-19 1990-08-21 The United States Of America As Represented By The Secretary Of The Air Force Technique of assembling structures using vapor phase soldering
US5262718A (en) * 1985-08-05 1993-11-16 Raychem Limited Anisotropically electrically conductive article
US5631447A (en) * 1988-02-05 1997-05-20 Raychem Limited Uses of uniaxially electrically conductive articles
US5637925A (en) * 1988-02-05 1997-06-10 Raychem Ltd Uses of uniaxially electrically conductive articles
US5139887A (en) * 1988-12-27 1992-08-18 Barnes Group, Inc. Superplastically formed cellular article
US5258649A (en) * 1989-05-20 1993-11-02 Hitachi, Ltd. Semiconductor device and electronic apparatus using semiconductor device
US5069978A (en) * 1990-10-04 1991-12-03 Gte Products Corporation Brazed composite having interlayer of expanded metal
CN1093565C (zh) * 1998-12-07 2002-10-30 株式会社日立制作所 复合材料及其应用
DE10022341B4 (de) * 2000-05-08 2005-03-31 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Elektronisches Leistungsmodul
EP1182701A1 (de) * 2000-08-21 2002-02-27 Abb Research Ltd. Verfahren zur Herstellung eines Pufferelementes zur Verminderung von mechanischen Spannungen
EP1246242A1 (de) * 2001-03-26 2002-10-02 Abb Research Ltd. Kurzschlussfestes IGBT Modul
US6833617B2 (en) 2001-12-18 2004-12-21 Hitachi, Ltd. Composite material including copper and cuprous oxide and application thereof
US8405996B2 (en) * 2009-06-30 2013-03-26 General Electric Company Article including thermal interface element and method of preparation
US10081163B2 (en) 2013-03-15 2018-09-25 All-Clad Metalcrafters Llc Cooking utensil having a graphite core
CN107752733B (zh) 2013-03-15 2020-10-02 全包层金属制品公司 用于炊具制造的粘接多个坯件组件的方法
US9585514B2 (en) 2013-03-15 2017-03-07 All-Clad Metalsrafters, LLC Heat zone pan
US10292255B2 (en) 2016-05-18 2019-05-14 Raytheon Company Expanding thermal device and system for effecting heat transfer within electronics assemblies
US11364706B2 (en) 2018-12-19 2022-06-21 All-Clad Metalcrafters, L.L.C. Cookware having a graphite core
DE102022208360A1 (de) 2022-08-11 2023-07-06 Zf Friedrichshafen Ag Leistungsmodul und verfahren zur montage eines leistungsmoduls

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE537167A (de) * 1954-04-07
DE1141029B (de) * 1960-06-23 1962-12-13 Siemens Ag Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE1153461B (de) * 1960-06-23 1963-08-29 Siemens Ag Halbleiteranordnung
US3365787A (en) * 1963-06-19 1968-01-30 Hexcel Corp Method of making metal honeycomb sandwich structure
US3256598A (en) * 1963-07-25 1966-06-21 Martin Marietta Corp Diffusion bonding
US3273029A (en) * 1963-08-23 1966-09-13 Hoffman Electronics Corp Method of attaching leads to a semiconductor body and the article formed thereby
US3295089A (en) * 1963-10-11 1966-12-27 American Mach & Foundry Semiconductor device
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
US3787958A (en) * 1965-08-18 1974-01-29 Atomic Energy Commission Thermo-electric modular structure and method of making same
US3871014A (en) * 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform solder wettable areas on the substrate
CA892844A (en) * 1970-08-14 1972-02-08 H. Hantusch Gerald Semiconductor heat sink
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
JPS5039066A (de) * 1973-08-08 1975-04-10
JPS5295172A (en) * 1976-02-06 1977-08-10 Mitsubishi Electric Corp Semi-conductor
JPS52147064A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor device
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
GB1598174A (en) * 1977-05-31 1981-09-16 Ibm Cooling electrical apparatus
US4089456A (en) * 1977-06-28 1978-05-16 United Technologies Corporation Controlled-pressure diffusion bonding and fixture therefor

Also Published As

Publication number Publication date
FR2420845B1 (fr) 1986-05-09
FR2420845A1 (fr) 1979-10-19
GB2017408B (en) 1982-07-21
BR7901763A (pt) 1979-11-20
DE2910959C2 (de) 1993-11-11
JPS54148375A (en) 1979-11-20
DE2910959A1 (de) 1979-10-18
US4385310A (en) 1983-05-24
GB2017408A (en) 1979-10-03
SE7902586L (sv) 1979-09-23
AR216582A1 (es) 1979-12-28
JPS6336136B2 (de) 1988-07-19

Similar Documents

Publication Publication Date Title
SE433021B (sv) Termiskt och elektriskt ledande skyddsbuffert for en halvledaranordning
US4482912A (en) Stacked structure having matrix-fibered composite layers and a metal layer
EP0012770B1 (de) Durch flüssigkeit gekühlte halbleitervorrichtung
JP6765426B2 (ja) パワー半導体装置
US3295089A (en) Semiconductor device
JPS61176142A (ja) 基板構造体
JPH04162756A (ja) 半導体モジュール
JPH0136254B2 (de)
JP6881304B2 (ja) 半導体装置及び半導体装置の製造方法
JPH0936186A (ja) パワー半導体モジュール及びその実装方法
US6534792B1 (en) Microelectronic device structure with metallic interlayer between substrate and die
JP3928488B2 (ja) 半導体装置およびその製造方法
JPH04192341A (ja) 半導体装置
JP4917375B2 (ja) パワー半導体モジュールの製造方法
JP2003347487A (ja) 半導体装置
JP2000323647A (ja) モジュール型半導体装置及びその製造方法
JP4227610B2 (ja) 放熱基体の製造方法
JPS63224242A (ja) 熱伝達装置
WO2016171122A1 (ja) 半導体装置及びその製造方法
JPH10138052A (ja) 少なくとも１つの金属基板にダイヤモンド基板を結合させる方法
JP2503776B2 (ja) 半導体装置用基板
JPS5966130A (ja) 半導体装置およびその製造方法
JP2503774B2 (ja) 半導体装置用基板
JP3850312B2 (ja) 半導体素子収納用パッケージおよび半導体装置
JPS60236236A (ja) 半導体素子用電極板

Legal Events

Date Code Title Description
NAL Patent in force

Ref document number: 7902586-2

Format of ref document f/p: F

NUG Patent has lapsed

Ref document number: 7902586-2

Format of ref document f/p: F