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KR970013008A - Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법 - Google Patents

Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법 Download PDF

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Publication number
KR970013008A
KR970013008A KR1019950027603A KR19950027603A KR970013008A KR 970013008 A KR970013008 A KR 970013008A KR 1019950027603 A KR1019950027603 A KR 1019950027603A KR 19950027603 A KR19950027603 A KR 19950027603A KR 970013008 A KR970013008 A KR 970013008A
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KR
South Korea
Prior art keywords
insulating substrate
single crystal
soi device
silicon
thin film
Prior art date
Application number
KR1019950027603A
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English (en)
Inventor
김도현
왕종희
Original Assignee
윤덕용
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤덕용, 한국과학기술원 filed Critical 윤덕용
Priority to KR1019950027603A priority Critical patent/KR970013008A/ko
Priority to US08/703,816 priority patent/US5891244A/en
Publication of KR970013008A publication Critical patent/KR970013008A/ko

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    • H01L21/208—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

본 발명은 SOI소자 제조장치 및 그를 이용한 SOI소자의 제조방법에 관한 것이다. 좀 더 구체적으로, 본 발명은 간단하며 경제적으로 대형의 SOI소자를 제조할 수 있는 SOI소자 제조장치 및 전기한 제조장치를 사용하여 결정성이 우수한 대형의 SOI소자를 경제적으로 제조할 수 있는 방법에 관한 것이다. 본 발명의 SOI소자 제조장치는 내열용기(11)에 충진된 다결정 실리콘(12)을 가열하여 용융시키기 위한 가열수단(13); 일면에 실리콘 단결정 시드(14)가 부착된 절연기판(4)을 상하로 이동시키면서 절연기판(4) 상에 내열용기(11)에 충진된 실리콘 용융액을 침적시켜 단결정 막막(5)을 형성하기 위한 절연기판 이송수단(15); 및 절연기판 이송수단(15)의 상하 이동에 의해 절연기판(4)상에 형성된 단결정 박막(5)의 두께를 일정하게 유지시키기 위한 쉐이퍼(16)로 구성된다. 또한, 본 발명의 SOI소자 제조방법은 실리콘 용융액을 제조하는 공정; 실리콘 용융액에 단결정 시드(14)를 침적시켜 용융시키고 절연기판(4)을 상방으로 이동시키면서 절연기판(4)에 침적된 실리콘 용융액을 응고시켜 단결정 박막(5)을 성장시키는 공정; 및 쉐이퍼(16)에 의해 절연기판(4) 상에 형성된 단결정 박막(5)의 두께를 일정하게 유지시키는 공정을 포함한다.

Description

SOI소자 제조장치 및 그를 이용한 SOI소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 SOI소자에 대한 개략적인 구조도이다.
제3도는 본 발명의 일실시예에 따른 SOI소자 제조장치의 개략적인 구성도이다.

Claims (7)

  1. 내열용기(11)에 충진된 다결정 실리콘(12)을 가열하여 용융시키기 위한 가열수단(13); 일면에 실리콘 단결정 시드(14)가 부착된 절연기판(4)을 상하로 이동시키면서 절연기판(4) 상에 내열용기(11)에 충진된 실리콘 용융액을 침적시켜 단결정 박막(5)을 형성하기 위한 절연기판 이송수단(15); 및 절연기판 이송수단(15)의 상하 이동에 의해 절연기판(4)상에 형성된 단결정 박막(5)의 두께를 일정하게 유지시키기 위한 쉐이퍼(16)로 구성된 SOI소자 제조장치.
  2. (ⅰ) SOI소자 제조장치의 내열용기(11)에 다결정 실리콘(12)을 충진시키고 가열수단(13)에 의해 1400℃ 이상으로 가열하여 실리콘 용융액을 제조하는 공정; (ⅱ) 일면에 실리콘 단결정 시드(14)가 부착된 1개 이상의 절연기판(4)을 절연기판 이송수단(15)에 의해 하방으로 이동시키고 전기한 실리콘 용융액에 단결정 시드(14)를 침적시켜 단결정 시드(14)를 용융시키고 절연기판(4)을 상방으로 이동시키면서 절연기판(4)에 침적된 실리콘 용융액을 응고시켜 단결정 박막(5)을 성장시키는 공정; 및 (ⅲ) 쉐이퍼(16)에 의해 전기한 절연기판(4) 상에 형성된 단결정 박막(5)의 두께를 일정하게 유지시키는 공정을 포함하는 SOI소자의 제조방법.
  3. 제2항에 있어서, 절연기판(4)으로는 사파이어 기판 등의 실리카 기판을 사용하는 것을 특징으로 하는 SOI소자의 제조방법.
  4. 제2항에 있어서, 단결정 박막(14) 성장시 실리콘 용융액에 불활성 가스를 주입하는 것을 특징으로 하는 SOI소자의 제조방법.
  5. 제2항에 있어서, 실리콘 단결정 시드(14)가 부착된 절연기판(4)을 2개 이상 사용시 절연기판(4) 사이에 분말상의 물질을 첨가하는 것을 특징으로 하는 SOI소자의 제조방법.
  6. 제5항에 있어서, 분말상 물질로는 질화붕소를 사용하는 것을 특징으로 하는 SOI소자의 제조방법.
  7. 제2항의 SOI소자 제조방법에 의해 제조되며, 절연기판(4) 상에 단결정실리콘 박막(5)이 형성된 SOI소자.
KR1019950027603A 1995-08-30 1995-08-30 Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법 KR970013008A (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019950027603A KR970013008A (ko) 1995-08-30 1995-08-30 Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법
US08/703,816 US5891244A (en) 1995-08-30 1996-08-27 Apparatus for the manufacture of SOI wafer and process for preparing SOI wafer therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950027603A KR970013008A (ko) 1995-08-30 1995-08-30 Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법

Publications (1)

Publication Number Publication Date
KR970013008A true KR970013008A (ko) 1997-03-29

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KR1019950027603A KR970013008A (ko) 1995-08-30 1995-08-30 Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법

Country Status (2)

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US (1) US5891244A (ko)
KR (1) KR970013008A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035285A (ko) * 1998-11-06 2000-06-26 미다라이 후지오 시료의 처리시스템

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183611B2 (en) * 2003-06-03 2007-02-27 Micron Technology, Inc. SRAM constructions, and electronic systems comprising SRAM constructions
CN101790774B (zh) 2007-06-26 2012-05-02 麻省理工学院 半导体晶圆在薄膜包衣中的重结晶以及有关工艺
US8242033B2 (en) * 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590130A (en) * 1984-03-26 1986-05-20 General Electric Company Solid state zone recrystallization of semiconductor material on an insulator
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035285A (ko) * 1998-11-06 2000-06-26 미다라이 후지오 시료의 처리시스템

Also Published As

Publication number Publication date
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