KR970004653Y1 - Exhauster of chemical gaseous phase adhesion device operating at atmospheric pressure - Google Patents
Exhauster of chemical gaseous phase adhesion device operating at atmospheric pressure Download PDFInfo
- Publication number
- KR970004653Y1 KR970004653Y1 KR2019930027383U KR930027383U KR970004653Y1 KR 970004653 Y1 KR970004653 Y1 KR 970004653Y1 KR 2019930027383 U KR2019930027383 U KR 2019930027383U KR 930027383 U KR930027383 U KR 930027383U KR 970004653 Y1 KR970004653 Y1 KR 970004653Y1
- Authority
- KR
- South Korea
- Prior art keywords
- exhaust
- valve
- atmospheric pressure
- process chamber
- vapor deposition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용없음.None.
Description
제 1 도는 일반적인 상압 학 기상 증착 장비의 구조도1 is a structural diagram of a general atmospheric pressure vapor deposition equipment
제 2 도는 본 고안에 의한 배기장치의 구조를 보인 배관도2 is a piping diagram showing the structure of the exhaust system according to the present invention
제 3 도의 (a)(b)(c)는 본 고안 장치의 동작 설명도3 (a) (b) (c) are explanatory diagrams of the operation of the present device
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
3 : 배기 덕트 5 : 압력조절기3: exhaust duct 5: pressure regulator
11 : 에어구동 배기 개패밸브 12 : 진공발생기11: air driven exhaust valve 12: vacuum generator
13 : 압력비교센서13: pressure comparison sensor
본 고안은 상압화학 기상증착장비의 배기장치에 관한 것으로, 특히 벤츄리관을 이용한 진공발생수단을 구비하여 배기압 조절을 용이하게 함과 아울러 챔버 퍼지시간을 단축하고, 퍼지시 파티클 발생을 억제토록 한 상압화학 기상증착장비의 배기장치에 관한 것이다.The present invention relates to an exhaust device for atmospheric pressure chemical vapor deposition equipment. In particular, a vacuum generating means using a venturi tube is provided to facilitate the control of the exhaust pressure, to shorten the chamber purge time, and to suppress particle generation during purge. An exhaust system of an atmospheric pressure chemical vapor deposition apparatus.
종래 일반적으로 사용되고 있는 상압화학 기상증착장비에 있어서는 배기를 위한 별도의 진공펌프가 없고, 메인 배기의 배기차압에 의존하여 배기를 행하고 있다.In conventional atmospheric chemical vapor deposition equipment, there is no separate vacuum pump for exhaust, and exhaust is performed depending on the exhaust pressure difference of the main exhaust.
제 1 도는 종래 일반적으로 알려지고 있는 상압화학 기상증착장비의 개략적인 구조를 보인 도면으로서, 도시한바와 같이, 공정 가스는 공정 챔버(1) 상부의 가스 노즐(2)을 통해 공정 챔버(1)내로 유입되고, 이 가스는 배기 덕트(3)를 통해 스크러버(4)로 빠져 나가게 된다.1 is a view showing a schematic structure of a conventional atmospheric pressure chemical vapor deposition equipment, as shown, the process gas through the gas nozzle (2) above the process chamber 1, the process chamber (1) Inwards, this gas is forced out of the scrubber 4 through the exhaust duct 3.
여기서, 반응에 사용되는 가스는 유독가스로써 공기중에 노출되면 반응 생성물을 형성하여 파티클로써 작용하제 되므로 이의 배기는 중요한 것으로 알려지고 있다.Here, the gas used for the reaction is known to be important because it is a toxic gas, and when exposed to air, the reaction product forms a reaction product and acts as a particle.
이러한 유독가스를 제거하기 위하여 상압화학 기상증착장비의 공정은 웨이퍼 로딩-공정 챔버(1) 퍼지-막형성-공정 챔버(1) 퍼지-웨이퍼 언로딩의 순서로 진행된다.In order to remove these toxic gases, the process of the atmospheric vapor deposition apparatus is performed in the order of wafer loading-process chamber 1 purge-film formation-process chamber 1 purge-wafer unloading.
그리고, 상기 배기 덕트(3)의 중간부에는 공정 챔버(1)내의 압력을 적정 수준으로 조절하기 위한 자동 압력조절기(5)가 착설되어 있다.In the middle of the exhaust duct 3, an automatic pressure regulator 5 is installed to adjust the pressure in the process chamber 1 to an appropriate level.
그러나, 상기한 바와 같은 일반적인 상압화학 기상증착장비에 있어서는 진공을 발생시킬 수 있는 별도의 진공펌프가 없고 메인 배기의 배기차압에 의해 배기하도록 되어 있어 고정 전, 후에 반드시 챔버를 퍼지하게 되어있는데, 이러한 퍼지를 행함에 있어 가스 노즐(2)를 통해 다량의 질소가스를 공정 챔버(1)내로 유입시켜 공정챔버(1)내의 공기(1차 퍼지) 및 유독 가스(2차 퍼지)를 제거하게 되어 있다.However, in the conventional atmospheric chemical vapor deposition equipment as described above, there is no separate vacuum pump capable of generating a vacuum, and the exhaust gas is discharged by the exhaust pressure of the main exhaust so that the chamber is always purged before and after fixing. In purging, a large amount of nitrogen gas is introduced into the process chamber 1 through the gas nozzle 2 to remove air (primary purge) and toxic gas (secondary purge) in the process chamber 1. .
따라서, 챔버 퍼지에 소요되는 시간이 길고, 또한 다량의 질소가스가 챔버내로 유입되는 과정에서 파티클이발생되는 문제가 있었다.Therefore, the time required for purging the chamber is long, and there is a problem that particles are generated in the process of introducing a large amount of nitrogen gas into the chamber.
이를 감안하여 안출한 본 고안의 목적은 벤츄리관을 이용한 진공발생 수단을 구비하여 배기압 조절을 용이하게 함과 아울러 퍼지에 소용되는 시간을 단축시키고, 퍼지시의 파티클 발생을 억제할 수 있도록 한 상압화학 기상증착장비의 배기장치를 제공함에 있다.In view of this, the object of the present invention is to provide a vacuum generating means using a venturi tube to facilitate exhaust pressure control, shorten the time used for purging, and to suppress particle generation during purging. The present invention provides an exhaust system for chemical vapor deposition equipment.
상기와 같은 본 고안의 목적을 달성하기 위하여, 공정 챔버와 스크러버를 연결하는 배기덕트의 중간부에 자동 압력 조절기를 착설하여 구성하는 상압화학 기상증착장비의 배기장치에 있어서, 상기 배기덕트의 자동 압력조절기 전방에 착설되어 배기덕트를 선택적으로 개, 폐하는 에어 구동 배기 개폐 밸브와, 질소 가스를 빠르게공급하여 그 유속으로 발생하는 흡입력으로 공정 챔버를 진공 상태로 펌핑하는 벤츄리관을 이용한 진공 발생기와, 상기 에어 구동 배기 개폐 밸브양단의 압력을 비교하여 에어 구동 배기 개폐 밸브를 구동시키는 압력 비교센서를 포항하여 구성한 것을 특징으로 하는 상압화학 기상증착장비의 배기장치가 제공된다.In order to achieve the object of the present invention as described above, in the exhaust device of the atmospheric pressure chemical vapor deposition equipment constituted by installing an automatic pressure regulator in the middle of the exhaust duct connecting the process chamber and the scrubber, the automatic pressure of the exhaust duct An air-driven exhaust on-off valve installed in front of the regulator to selectively open and close the exhaust duct, and a vacuum generator using a venturi tube for rapidly supplying nitrogen gas and pumping the process chamber into a vacuum with suction force generated at the flow rate thereof; An exhaust device for an atmospheric pressure chemical vapor deposition apparatus is provided, comprising a pressure comparison sensor configured to compare the pressures at both ends of the air driven exhaust on / off valve to drive an air driven exhaust on / off valve.
이와 같이된 본 고안의 배기장치에 의하면, 벤츄리관을 이용한 진공발생기로 공정 챔버를 펌핑하여 배기함으로써 챔버 퍼지에 소요되는 시간을 1/10 이하로 줄일 수 있으므로 생산성을 향상시킬 수 있고, 공정 챔버내에질소 가스를 주입하는 퍼지 방식이 아니므로 종래와 같은 질소 가스로 인한 파티클 발생을 현저하게 줄일 수 있다는 효과도 있다.According to the exhaust device of the present invention as described above, the time required for purging the chamber can be reduced to 1/10 or less by pumping the process chamber with a vacuum generator using a venturi tube, thereby improving productivity, and Since it is not a purge method of injecting nitrogen gas, there is also an effect that the generation of particles due to nitrogen gas as in the prior art can be significantly reduced.
이하, 상기한 바와 같은 본 고안에 의한 상압화학 기상증착장비의 배기장치를 첨부도면에 의거하여 보다 상세히 설명한다.Hereinafter, the exhaust device of the atmospheric chemical vapor deposition equipment according to the present invention as described above will be described in more detail based on the accompanying drawings.
첨부한 제 2 도는 본 고안 장치의 구조를 보인 도면이고, 제 3 도의 (a)(b)(c)는 본 고안 장치의 동작 설명도로서, 이에 도시한 바와 같이, 본 고안에 의한 상압화학 기상증착장비의 배기장치는 공정 챔버(1: 본 고안의 도면에서는 도시를 생략함, 제 1 도를 참조할것)와 스크러버(4: 제 1 도 참조)를 연결하는 배기 덕트(3)의 중간부에자동 압력 조절기(5)를 착설하여 구성하는 상압화학 기상증착장비의 배기장치에 있어서, 상기 배기 덕트(3)의 자동 압력 조절기(5) 전방에 착설되어 배기 덕트(3)를 선택적으로 개, 폐하는 에어 구동 배기 개폐밸브(11)와, 질소가스를 빠르게 공급하여 그 유속으로 발생하는 흡입력으로 공정 챔버(1)를 진공상태로 펌핑하는 벤츄리관을 이용한 진공발생기(12)와, 상기 에어 구동 배기 개폐 밸브(11) 양단의 압력을 비교하여 에어 구동 배기 개폐 밸브(11)를 개, 폐 구동시키는 압력 비교 센서(13)를 포함하여 구성한 것으로, 도면에서 종래 구성과 동일한 부분에 대해서는 동일 부호를 부여하였다.2 is a view showing the structure of the device of the present invention, Figure 3 (a) (b) (c) is a diagram illustrating the operation of the device of the present invention, as shown therein, atmospheric pressure chemical vapor phase according to the present invention The exhaust device of the vapor deposition apparatus is provided at an intermediate portion of the exhaust duct 3 connecting the process chamber (not shown in the drawings of the present invention, see FIG. 1) and the scrubber (see FIG. 1). In the exhaust device of the atmospheric pressure chemical vapor deposition equipment constructed by installing the automatic pressure regulator (5), it is installed in front of the automatic pressure regulator (5) of the exhaust duct (3) to selectively open and close the exhaust duct (3) Is an air driven exhaust on / off valve 11, a vacuum generator 12 using a venturi tube for rapidly supplying nitrogen gas and pumping the process chamber 1 in a vacuum state at a suction force generated at the flow rate thereof, and the air driven exhaust valve. By comparing the pressure at both ends of the on / off valve (11) That is configured to compare a pressure sensor 13 for open and closed-drive the opening and closing valve 11, and the same reference numerals for the same parts as those of the conventional configuration to the figures.
상기 진공 발생기(12)의 전방에는 질소 가스의 공급을 선택적으로 차단하기 위한 개폐 밸브(14)가 착설되어있고, 상기 진공 발생기(12)의 목부위에는 그 진공 발생기(12)와 배기 덕트(3)를 연결하는 분기관(12a)이 형성되어 진공 발생기(12)의 흡입력이 배기 덕트(3)를 통해 공정 챔버(1)로 전달되도록 되어 있으머, 상기 분기관(12a)에는 그 관(12a)을 선택적으로 개, 폐하기 위한 밸브(15)가 착설되어 있다.In front of the vacuum generator 12, an on-off valve 14 for selectively blocking the supply of nitrogen gas is installed, and the vacuum generator 12 and the exhaust duct 3 are located at the neck of the vacuum generator 12. Branch pipe 12a is formed to connect the suction force of the vacuum generator 12 to the process chamber 1 through the exhaust duct 3, and the branch pipe 12a is connected to the pipe 12a. The valve 15 for selectively opening and closing) is installed.
이하, 상기한 바와 같은 본 고안에 의한 배기장치의 작용 및 그에 따르는 효과를 설명한다.Hereinafter, the operation of the exhaust device according to the present invention as described above and the effects thereof will be described.
초기 공정 대기상태 또는 공정시에는 제 3 도의 (a)에 도시한 바와 같이, 배기 덕트(3)의 중간부에 착설된 에어구동 배기 개폐밸브(11)만이 개방된 상태로 종래와 같이 메인 배기의 배기 차압에 의존하여 공성이 진행된다.In the initial process standby state or process, as shown in FIG. 3 (a), only the air-driven exhaust opening / closing valve 11 installed in the middle of the exhaust duct 3 is opened, and as shown in FIG. Siege proceeds depending on the exhaust differential pressure.
이와 같은 상태에서 챔버 퍼지스텝이 되며, 공정 챔버(1)내로 유입되는 모든 가스의 공급을 중지시킨 후, (b)에서와 같이 진공 발생기(12) 전방의 밸브(14)를 개방하여 상기의 진공 발생기(12)로 질소 가스를 빠르게 공급시킨다.In this state, the chamber purge step is performed, and after the supply of all the gas flowing into the process chamber 1 is stopped, the valve 14 in front of the vacuum generator 12 is opened as in (b), and the vacuum is maintained. Nitrogen gas is quickly supplied to the generator 12.
상기와 같이 공급되는 질소 가스는 진공 발생기(12)를 통과하면서 스크러버로 빠르게 지나가게 되고, 이에따라 진공 발생기(12)의 분기관(12a)이 고전공 상태로 된다.(이때 에어 구동 배기 개폐 밸브는 클로우즈 상태이다)수초 정도의 시간이 경과된 후,(c)도에서와 같이 분기관(12a)의 밸브(15)를 개방시키면, 공정 챔버(1)내는 고전공 상태로 들어가게 된다.The nitrogen gas supplied as described above quickly passes through the vacuum generator 12 to the scrubber, whereby the branch pipe 12a of the vacuum generator 12 is in a high hole state. After a few seconds have elapsed, as shown in (c), when the valve 15 of the branch pipe 12a is opened, the process chamber 1 enters a high pore state.
이와 같이 공정 챔버(1)내의 압력이 설정된 고진공 상태가 되면, 개폐 밸브(14)를 닫아 진공 발생기용 질소가스의 공급을 중지시키고, 이어서 분기관(12a)의 밸브(15)도 클로우즈 시킨다음 공정 챔버(1)내로 다시 공정가스를 공급시킨다.In this way, when the pressure in the process chamber 1 is set to a high vacuum state, the on / off valve 14 is closed to stop the supply of nitrogen gas for the vacuum generator, and then the valve 15 of the branch pipe 12a is also closed. Process gas is again supplied into the chamber (1).
공정 챔버(1)내로 가스를 공급하여 에어 구동 배기 개패밸브(11)선단의 압력이 그 후단보다 높아지게 되면, 이를 압력 비교 센서(13)이 감지하여 에어 구동 배기 개폐 밸브(11)를 개방시킴으로써 필름 증착 공정을 진행하는 것이다.When the gas is supplied into the process chamber 1 so that the pressure at the front end of the air driven exhaust open valve 11 becomes higher than the rear end thereof, the pressure comparison sensor 13 detects this and opens the air driven exhaust on / off valve 11 to open the film. The deposition process is in progress.
즉, 본 고안은 챔버 퍼지시 챔버내에 다량의 질소 가스를 주입시키지 않고 진공 발생기(12)로 챔버를 펌핑함으로써 퍼지 시간을 대폭 줄임과 동시에 질소 가스로 인한 파티클의 발생을 현저하게 줄일 수 있는 것이다.In other words, the present invention can significantly reduce the purge time and significantly reduce the generation of particles due to nitrogen gas by pumping the chamber to the vacuum generator 12 without injecting a large amount of nitrogen gas into the chamber during the chamber purge.
이상에서 상세히 설명한 바와 같이, 본 고안의 배기 장치에 의하면, 벤츄리관을 이용한 진공 발생기로 공정챔버를 펌핑하여 배기함으로써 챔버 퍼지에 소요되는 시간을 1/10 이하로 줄일 수 있으므로 생산성을 향상시킬수 있고, 공정 챔버내에 질소 가스를 주입하는 퍼지 방식이 아니므로 종래와 같은 질소 가스로 인한 파티클 발생을 현저하게 줄일 수 있다는 효과도 있다.As described in detail above, according to the exhaust device of the present invention, by reducing the time required to purge the chamber to less than 1/10 by pumping the process chamber with a vacuum generator using a venturi tube, it is possible to improve the productivity, Since it is not a purge method of injecting nitrogen gas into the process chamber, there is an effect that the generation of particles due to nitrogen gas can be significantly reduced.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930027383U KR970004653Y1 (en) | 1993-12-11 | 1993-12-11 | Exhauster of chemical gaseous phase adhesion device operating at atmospheric pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930027383U KR970004653Y1 (en) | 1993-12-11 | 1993-12-11 | Exhauster of chemical gaseous phase adhesion device operating at atmospheric pressure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950020494U KR950020494U (en) | 1995-07-26 |
| KR970004653Y1 true KR970004653Y1 (en) | 1997-05-15 |
Family
ID=19370685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019930027383U KR970004653Y1 (en) | 1993-12-11 | 1993-12-11 | Exhauster of chemical gaseous phase adhesion device operating at atmospheric pressure |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970004653Y1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100239691B1 (en) * | 1996-07-08 | 2000-01-15 | 김영환 | Exhaust device for semiconductor deposition apparatus |
-
1993
- 1993-12-11 KR KR2019930027383U patent/KR970004653Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950020494U (en) | 1995-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11986868B2 (en) | System dedicated for parts cleaning | |
| JP3765925B2 (en) | Semiconductor device manufacturing equipment and driving method thereof | |
| US5703281A (en) | Ultra high vacuum pumping system and high sensitivity helium leak detector | |
| EP1489646B1 (en) | Cvd apparatus and method of cleaning the cvd apparatus | |
| US5560803A (en) | Plasma ashing method with oxygen pretreatment | |
| KR100549946B1 (en) | Equipment for detecting vacuum leakage of semiconductor product device | |
| KR970004653Y1 (en) | Exhauster of chemical gaseous phase adhesion device operating at atmospheric pressure | |
| US6139640A (en) | Chemical vapor deposition system and method employing a mass flow controller | |
| KR102452714B1 (en) | Chamber apparatus for both high pressure and vacuum process | |
| KR100234531B1 (en) | Exhausting system of semiconductor low press chemincal vapor deposition system | |
| JPH06318116A (en) | Gas flow rate controller | |
| JP2826479B2 (en) | Gas supply device and operation method thereof | |
| KR100253299B1 (en) | Method for cleaning pump of nitride film depositing equipment in semiconductor | |
| JPH05152217A (en) | Exhaust system for manufacturing high-performance semiconductor and control method thereof | |
| JP4304354B2 (en) | Semiconductor device processing method | |
| JPH07176519A (en) | Discharge processing device | |
| KR100306242B1 (en) | Pump having a nitrogen purge system | |
| KR19980069172A (en) | Residual gas exhaust method of gas supply system | |
| KR960012621B1 (en) | Oxide film removing method of wafer surface | |
| KR100227830B1 (en) | Vacuum system for semiconductor process chamber and gas-supplying method | |
| KR0118594Y1 (en) | Gas supply system | |
| KR100270754B1 (en) | Exhaust pipe line auto purge method | |
| KR200267582Y1 (en) | Vacuum supply system of a lower pressure chemical vapor deposition | |
| KR940000209B1 (en) | Pumping system | |
| KR0167240B1 (en) | Apparatus for supplying gas in deposition equipment of semiconductor insulating film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20070914 Year of fee payment: 11 |
|
| LAPS | Lapse due to unpaid annual fee |