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KR940000209B1 - Gasline Pumping System in Dry Etching Process - Google Patents

Gasline Pumping System in Dry Etching Process Download PDF

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Publication number
KR940000209B1
KR940000209B1 KR1019910018888A KR910018888A KR940000209B1 KR 940000209 B1 KR940000209 B1 KR 940000209B1 KR 1019910018888 A KR1019910018888 A KR 1019910018888A KR 910018888 A KR910018888 A KR 910018888A KR 940000209 B1 KR940000209 B1 KR 940000209B1
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South Korea
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gas
passage
line
pumping system
etching process
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KR930008297A (en
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조인수
박성원
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삼성전자 주식회사
김광호
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04BPOSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B23/00Pumping installations or systems

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A gas line pumping system of a dry etching process includes a vacuum generator having an inlet thereof connected onto a gas supply line connected between a gas bomb and an etch chamber for supplying gas used for etching, and an outlet thereof connected between a vacuum pump and a gas cleaning unit to form a tubed path by means of a pipe, so that, if the gas accumulates for a long time after completing the etching, the accumulated gas is exhausted to prevent corrosion or clogging phenomena within the line caused by liquefaction of the gas.

Description

드라이 에칭공정의 개스라인 펌핑 시스템Gasline Pumping System in Dry Etching Process

제1도는 종래의 드라이 에칭공정 개스라인을 나타내는 도면.1 is a view showing a conventional dry etching process gas line.

제2도는 본 발명에 의한 드라이 에칭공정의 개스라인을 나타내는 도면.2 is a view showing a gas line of a dry etching process according to the present invention.

제3도는 본 발명에 관련하는 진공 발생기의 측단면도이다.3 is a side sectional view of a vacuum generator according to the present invention.

본 발명은 드라이 에칭공정의 개스라인 펌핑 시스템에 관한 것으로서, 보다 상세하게는 개스라인내의 온도차나 정체시 개스가 액화되는 것을 방지하여 개스의 흐름을 원활하게 할 수 있도록 한 개스라인 펌핑 시스템에 관한 것이다.The present invention relates to a gas line pumping system of a dry etching process, and more particularly, to a gas line pumping system which prevents gas from liquefying when a temperature difference or congestion occurs in the gas line to smooth the flow of the gas. .

반도체 공정의 미세화 및 고집적화로 대부분의 에칭공정은 개스를 이용한 드라이 에칭을 행하고 있다.Due to miniaturization and high integration of semiconductor processes, most etching processes are performed by dry etching using gas.

에칭에 사용되는 개스중에서 액화성 개스가 사용되는 공정이 있는데, 이 경우의 개스는 개스라인내의 온도차가 있을때나 개스의 흐름이 정체되는 경우 액화되어 개스라인을 막아버리는 결점을 갖고 있다.There is a process in which liquefied gas is used among the gases used for etching, in which case the gas has a drawback of liquefying and blocking the gas line when there is a temperature difference in the gas line or when the flow of the gas is stagnant.

제1도는 종래의 드라이 에칭공정의 개스라인을 나타내는 도면으로서, 개스봄베(1)는 압력조절기(2)를 개재하여 MFC(Mass Flow Controller)(3)와 연결되어 있다.FIG. 1 is a view showing a gas line of a conventional dry etching process. The gas cylinder 1 is connected to a mass flow controller (MFC) 3 through a pressure regulator 2.

상기한 MFC(3)는 에칭챔버(4)와 연통되어 있으며, 이 에칭챔버(4)는 진공펌프(5)와 연결되어 이곳에 유입된 개스를 배기시키도록 되어 있다.The MFC 3 is in communication with the etching chamber 4, which is connected to the vacuum pump 5 to exhaust the gas introduced therein.

상기한 진공펌프(5)는 가스 세정기(6)와 연통되어 배시된 개스를 외부로 배출시키도록 되어 있다.The vacuum pump 5 communicates with the gas scrubber 6 to discharge the gas discharged to the outside.

도면에서 개스라인에는 여러종류의 밸브가 설치되고 있는데, 이들은 개스의 주입과 배출을 위하여 설치되거나 개스의 흐름방향을 바꾸어주기 위하여 설치되는 것들이다.In the drawing, various types of valves are installed in the gas line, which are installed to inject and discharge the gas or to change the flow direction of the gas.

이와같이 이루어지는 종래의 개스라인은 에칭을 위한 개스의 공급에는 별다른 문제점을 노출시키지 않지만, 에칭챔버(4)등을 사용하지 않는 경우에는 기 공급된 개스가 라인내에 존재하게 되는데, 이 잔류개스를 배출시키기 위한 수단이 배려되어 있지 않기 때문에 많은 문제점을 초래시키고 있다.The conventional gas line thus formed does not expose any problems to the supply of the gas for etching, but when the etching chamber 4 or the like is not used, the supplied gas is present in the line. There is a lot of problems because the means are not considered.

즉 액화성 개스의 경우 개스라인내의 온도차가 발생되면 개스가 액화되어 MFC(3)의 기능을 상실시키는가 하면 개스라인을 차단시켜 부품을 부식시키는 요인이 되고 있다.In other words, in the case of liquefied gas, when a temperature difference occurs in the gas line, the gas is liquefied to lose the function of the MFC 3, and the gas line is blocked to cause corrosion of the parts.

본 발명은 상기한 바와 같은 종래 기술의 문제점을 해소하기 위하여 발명된 것으로서, 본 발명의 목적은 개스라인내의 개스가 장시간 정체되는 경우 이를 배기시켜 라인의 막힘현상을 방지함과 아울러 부품의 부식등을 방지할 수 있는 개스라인 펌핑 시스템을 제공하는 데 있다.The present invention has been invented to solve the problems of the prior art as described above, the object of the present invention is to prevent the blockage of the line and the corrosion of the parts by exhausting the gas in the gas line if it is stagnant for a long time. It is to provide a gasline pumping system that can be prevented.

이를 실현하기 위하여 본 발명은, 개스봄베와 에칭 시스템 사이의 개스공급관로에 진공발생기의 입구를 연결하고, 이 진공발생기의 출구를 진공펌프와 개스세정기 사에 연결하여 이루어지는 드라이 에칭공정의 개스라인 펌핑 시스템을 제공하고 있다.In order to realize this, the present invention is connected to the gas supply line between the gas cylinder and the etching system, the gas generator pump is connected to the inlet of the vacuum generator, the outlet of the vacuum generator connected to the vacuum pump and the gas cleaner pump Providing a system.

이와같이 이루어지는 본 발명의 펌핑 시스템은, 에칭공정이 완료된 후, 개스를 배기시킬 필요가 있을때에는 진공발생기의 입구측에 질소개스를 소정의 압력으로 불어 넣게되면 제1통로와 제2통로사이의 압력차가 발생하여 진공이 형성되므로 개스공급관로내로의 에칭개스가 배기된다.In the pumping system of the present invention thus formed, when the gas needs to be exhausted after the etching process is completed, when the nitrogen gas is blown to the inlet side of the vacuum generator at a predetermined pressure, the pressure difference between the first passage and the second passage is reduced. A vacuum is formed and the etching gas into the gas supply line is exhausted.

이하 본 발명의 바람직한 실시예를 첨부한 도면에 따라 더욱 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

제2도는 본 발명에 의한 개스라인의 흐름도로서, 개스봄베(1)로 부터 압력조절기(2), MFC(3), 에칭챔버(4), 진공펌프(5)를 경유하여 개스세정기(6)로 유입되는 계통도는 동일하게 이루어지고 있다.2 is a flow chart of the gas line according to the present invention, from the gas cylinder 1 to the gas cleaner 6 via the pressure regulator 2, the MFC 3, the etching chamber 4, and the vacuum pump 5; The flow diagram flowing into is made in the same way.

본 발명은 이러한 개스라인에 잔류하는 개스를 펌핑하는 수단을 부여함에 특징이 있는 것으로서, 압력조절기(2)와 MFC(3)사이에 진공발생기(7)를 개재시켜 입구측과 연결하고, 출구측을 진공펌프(5)와 개스세정기(6)사이에 연결한 펌핑장치를 제공하고 있다.The present invention is characterized in that it provides a means for pumping the gas remaining in the gas line, it is connected to the inlet side through the vacuum generator 7 between the pressure regulator 2 and the MFC (3), the outlet side It provides a pumping device connected between the vacuum pump (5) and the gas cleaner (6).

상기한 진공발생기(7)와 개스세정기(6)는 관로(8)로 연결되는 구조로되어 있으며, 개스공급관로(9)(10)와의 사이에는 밸브(11)(12)가 각각 설치되어 있다.The vacuum generator (7) and the gas cleaner (6) has a structure that is connected by a conduit (8), the valve (11) 12 is provided between the gas supply conduits (9, 10), respectively. .

이들은 개스봄배(1)가 위치하는 봄베박스(B)내에 설치되고 있으며, 관로(8)상에는 또다른 밸브(13)가 설치되어 진공펌프(5)와 개스세정기(6)를 연결하는 배기관(14)과의 개폐조작이 이루어지도록 되어 있다.These are installed in the cylinder box B in which the gas spring vessel 1 is located, and another valve 13 is installed on the pipeline 8 to connect the vacuum pump 5 and the gas purifier 6 to the exhaust pipe 14. Opening and closing operation with) is made.

상기한 MFC(3)의 입구 및 출구측에는 개스공급시에 오프되고 배기시에 폐쇄할 수 있는 밸브(15)(16)가 각각 설치되어 있다.The inlet and outlet sides of the MFC 3 are provided with valves 15 and 16 which can be turned off at the time of gas supply and closed at the time of exhaust.

상기한 실시예에서는 진공발생기(7)를 개스봄베(B)내에 위치시시키고 있으나, 관로(8)상에 설치하여 개스봄베(B)의 밖으로 위치시킬 수도 있다.In the above-described embodiment, the vacuum generator 7 is positioned in the gas cylinder B. However, the vacuum generator 7 may be installed on the conduit 8 to be positioned outside the gas cylinder B.

제3도는 본 발명에 관련하는 진공발생기(7)의 측단면도로서, 몸체(17)는 2개의 벤츄리관(18)(19)가 조합되어 이루어지는 구조로되어 있다.3 is a side cross-sectional view of the vacuum generator 7 according to the present invention. The body 17 has a structure in which two venturi tubes 18 and 19 are combined.

상기한 벤츄리관(18)은 개스공급관로(9)와 연결되는 입구(20)가 뚫려진 플랜지(21)와 이 플랜지(21)로 부터 일체로 형성되어 연장되는 제1통로(22)를 포함하고 있다.The venturi tube 18 includes a flange 21 through which an inlet 20 connected to the gas supply line 9 is drilled, and a first passage 22 integrally formed and extending from the flange 21. Doing.

제1통로(22)는 입구측에서 출구측으로 가면서 점차 좁아지는 형상을 하고 있는데, 이러한 형상은 출구측의 유속을 빠르게하는 기능을 갖게된다.The first passage 22 has a shape that gradually narrows from the inlet side to the outlet side, and this shape has a function of speeding up the flow velocity of the outlet side.

상기한 플랜지(21)상에 위치되어 조합되는 밴츄리관(19)는 개스공급관로(10)와 연결되는 입구(23)를 갖고 있으며, 제1통로(22)가 내측에 위치하는 제2통로(24)를 포함하고 있다.The venturi pipe 19 positioned and combined on the flange 21 has an inlet 23 connected to the gas supply pipe 10, and a second passage in which the first passage 22 is located inward. It includes (24).

상기한 제2통로(24)는 제1통로(22)와 동일하게 경사져 출구측이 좁아지는 형상으로 이루어지고 있는데 제2통로(24)의 내경은 제1통로(22)의 내경보다 크게 형성되어 이들 통로사이에 공간이 형성되는 구조로 이루어져 있다.The second passage 24 is inclined in the same manner as the first passage 22 so that the outlet side is narrowed. The inner diameter of the second passage 24 is larger than that of the first passage 22. It consists of a structure in which a space is formed between these passages.

상기한 제2통로(24)는 제1통로(22)보다 길게 형성되어 제1통로(22)의 끝단이 제2통로(24)출구내측으로 위치하는 상태로 되어 있다.The second passage 24 is formed longer than the first passage 22 so that the end of the first passage 22 is positioned inside the second passage 24 exit.

이와같이 이루어지는 본 발명에 의한 개스라인 펌핑 시스템은, 밸브(11)(12)(13)를 잠그고, 밸브(15)(16)를 연 상태에서, 개스공급관로(10)의 개스봄베(1) 사이의 밸브들을 열게되면 개스봄베(1)내에 충진되어 있는 액화성 개스들이 MFC(3)를 통하여 에칭챔버(4)측으로 유입되어 종래와 동일한 방식으로 에칭이 이루어진다.In the gas line pumping system according to the present invention, the valves 11, 12, 13 are closed, and the valves 15, 16 are opened, and the gas cylinders 1 of the gas supply line 10 are opened. When the valves are opened, the liquefied gases filled in the gas cylinder 1 flow into the etching chamber 4 through the MFC 3 and are etched in the same manner as the conventional method.

에칭이 완료되면, 밸브(15)(16)를 잠그게 되는데, 이와같이 밸브(15)(16)가 잠기어 개스공급라인(10)에 개스가 잔류하게 되는 경우, 다음공정 까지의 시간이 길어지게 되는 경우에는 밸브(11)(12)(13)를 열고 개스공급관로(9)를 통하여 질소개스를 일정압력이상으로 유입시키게 되면 이 질소개스는 밸브(11)를 통하여 진공발생기(7)로 유입된다.When the etching is completed, the valves 15 and 16 are locked. If the valves 15 and 16 are locked and the gas remains in the gas supply line 10, the time until the next process becomes longer. In this case, when the valves 11, 12, 13 are opened and nitrogen gas is introduced through the gas supply line 9 above a certain pressure, the nitrogen gas flows into the vacuum generator 7 through the valve 11. do.

진공발생기(7)내로 유입되는 질소개스는 제3도에 도시한 바와같이 제1통로(22)를 통하게 되는데, 이곳의 제1통로(22)가 출구측이 좁아지는 형태로 되어 있기 때문에 점차적으로 유속이 빠르게 된다.The nitrogen gas flowing into the vacuum generator 7 passes through the first passage 22, as shown in FIG. 3, and the first passage 22 is gradually narrowed because the outlet side is narrowed. The flow rate is faster.

출구측의 유속이 빨라짐에 따라 출구측의 압력이 저하되는데, 이 출구는 개스공급관로(10)와 연결되는 입구(23)와 연통되어 있음에 기인하여 개스공급관로(10)내에 잔류하는 액화성 개스가 제2통로(24)내로 빨려오기 시작한다.As the flow velocity on the outlet side increases, the pressure on the outlet side decreases, and the liquefaction remaining in the gas supply line 10 due to the communication with the inlet 23 connected to the gas supply line 10. The gas begins to be sucked into the second passage 24.

이 제2통로(24)내로 빨려오는 개스는 출구측으로 빠져나가 관로(8)를 거쳐 배기관(14)으로 유입되면서 개스세정기(6)내로 들어가 배출된다.The gas sucked into the second passage 24 exits the outlet side, enters the exhaust pipe 14 through the pipe line 8, and enters the gas cleaner 6 and is discharged.

이러한 작용이 일정시간동안 이루어지게 되면 개스공급관로(10)는 액화성 개스가 빠져나가면서 진공상태가 된다.When such an action is made for a certain time, the gas supply line 10 is in a vacuum state as the liquefied gas exits.

상기한 배기시간은 타이머를 부착하여 자동으로 조절할 수 있는데, 이것에 대한 기술은 당분야에서 용이하게 실시할 수 있는 것이므로 설명을 생략한다.The above-mentioned exhaust time can be adjusted automatically by attaching a timer, and description thereof will be omitted since it can be easily implemented in the art.

이상 설명한 바와 같이 본 발명에 의한 개스라인 펌핑 시스템은, 에칭공정에 사용되는 개스가 에칭완료후, 장시간 정체되는 경우 이를 배기시킴으로서, 개스가 액화됨에 의해 발생되는 라인내의 부식이나 막힘현상을 방지할 수 있다.As described above, the gasline pumping system according to the present invention can prevent the corrosion or blockage in the line caused by the gas being liquefied by venting the gas used in the etching process after the etching is stagnated for a long time. have.

Claims (3)

개스봄베(1)와 에칭챔버(4) 사이에 연결되어 에칭에 사용되는 개스를 공급하는 개스공급관로(10)상에, 진공발생기(7)의 입구를 연결하고 이 진공발생기(7)의 출구를 진공펌프(5)와 개스세정기(6)사이에 연결하여 관로(8)로 연통구성함을 특징으로 하는 드라이 에칭공정의 개스라인 펌핑 시스템.On the gas supply line 10 connected between the gas cylinder 1 and the etching chamber 4 to supply the gas used for etching, the inlet of the vacuum generator 7 is connected and the outlet of the vacuum generator 7 is connected. Gas line pumping system of a dry etching process, characterized in that the connection between the vacuum pump (5) and the gas cleaner (6) in a conduit (8). 제1항에 있어서, 개스발생기(7)는 개스공급관로(9)와 연결되는 입구(20)를 보유하며, 출구측이 점차적으로 좁아지는 제1통로(22)와 일체로 형성되어 이루어지는 벤츄리관(18)과, 상기한 벤츄리관(18)의 외측에 위치하며, 개스공급관로(10)와 연결되는 입구(23)을 보유함과 아울러 출구측이 점차적으로 좁아지는 제2통로(24)를 구비하고 있는 또다른 벤츄리관(19)과로 구성됨을 특징으로 하는 드라이 에칭공정의 개스라인 펌핑 시스템.The venturi tube according to claim 1, wherein the gas generator (7) has an inlet (20) connected to the gas supply line (9), and is formed integrally with the first passage (22) whose outlet side is gradually narrowed. 18 and a second passage 24 located outside the venturi tube 18 and having an inlet 23 connected to the gas supply line 10 and gradually narrowing the outlet side thereof. A gas line pumping system of a dry etching process, characterized in that it comprises another Venturi tube (19) provided. 제2항에 있어서, 제1통로(22)의 길이는 제2통로(24)의 길이보다 짧게 형성됨을 특징으로 하는 드라이 에칭공정의 개스라인 펌핑 시스템.3. The gasline pumping system according to claim 2, wherein the length of the first passage (22) is shorter than the length of the second passage (24).
KR1019910018888A 1991-10-25 1991-10-25 Gasline Pumping System in Dry Etching Process Expired - Fee Related KR940000209B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910018888A KR940000209B1 (en) 1991-10-25 1991-10-25 Gasline Pumping System in Dry Etching Process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910018888A KR940000209B1 (en) 1991-10-25 1991-10-25 Gasline Pumping System in Dry Etching Process

Publications (2)

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KR930008297A KR930008297A (en) 1993-05-21
KR940000209B1 true KR940000209B1 (en) 1994-01-12

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