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KR960019292A - Internal Voltage Conversion Circuit of Semiconductor Integrated Devices - Google Patents

Internal Voltage Conversion Circuit of Semiconductor Integrated Devices Download PDF

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Publication number
KR960019292A
KR960019292A KR1019940030258A KR19940030258A KR960019292A KR 960019292 A KR960019292 A KR 960019292A KR 1019940030258 A KR1019940030258 A KR 1019940030258A KR 19940030258 A KR19940030258 A KR 19940030258A KR 960019292 A KR960019292 A KR 960019292A
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KR
South Korea
Prior art keywords
internal
voltage
inputting
reference voltage
internal voltage
Prior art date
Application number
KR1019940030258A
Other languages
Korean (ko)
Other versions
KR0162988B1 (en
Inventor
박희철
김영태
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940030258A priority Critical patent/KR0162988B1/en
Publication of KR960019292A publication Critical patent/KR960019292A/en
Application granted granted Critical
Publication of KR0162988B1 publication Critical patent/KR0162988B1/en

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 외부전원전압을 입력하여 내부전압을 발생하는 반도체 집적장치의 내부전압 변환회로에 있어서, 기준전압을 발생하는 기준전압 발생 수단과, 기준전압을 입력하여 일정한 내부전압 레벨을 유지하는 내부기준 전압을 발생하는 레벨 쉬프터 수단과, 내부기준전압과 커런트 소오스 수단의 출력 전압을 입력하여 그 차이를 비교증폭하는 차동증폭수단과, 각각의 내부 회로에 상응하는 내부전압을 독립적으로 드라이빙하기 위한 내부 전압 드라이버 수단을 구비함을 특징으로 한다. 본 발명에 의하여 각각의 내부회로에 동일한 전압레벨의 내부 전압을 공급할 수 있으며, 내부회로의 위치에 관계없이 일정한 전압 레벨을 가지는 내부전압을 공급하여 칩의 동작을 안정적으로 수행할 수 있는 효과가 있다.The present invention relates to an internal voltage conversion circuit of a semiconductor integrated device which generates an internal voltage by inputting an external power supply voltage, comprising: a reference voltage generating means for generating a reference voltage, and an internal reference for maintaining a constant internal voltage level by inputting a reference voltage; A level shifter means for generating a voltage, a differential amplification means for inputting an output voltage of an internal reference voltage and a current source means and amplifying the difference, and an internal voltage for independently driving an internal voltage corresponding to each internal circuit. And driver means. According to the present invention, it is possible to supply internal voltages having the same voltage level to each internal circuit, and to stably operate the chip by supplying internal voltages having a constant voltage level regardless of the position of the internal circuits. .

Description

반도체 집적장치의 내부전압 변환회로Internal Voltage Conversion Circuit of Semiconductor Integrated Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 내부전압 변환회로.2 is an internal voltage conversion circuit according to the present invention.

Claims (2)

외부전원전압을 입력하여 내부전압을 발생하는 반도체 집적장치의 내부전압 변환회로에 있어서, 기준전압을 발생하는 기준전압 발생 수단과, 상기 기준전압을 입력하여 일정한 내부전압 레벨을 유지하는 내부기준전압을 발생하는 레벨 쉬프터 수단과, 상기 내부기준전압과 커런트 소오스 수단의 출력 전압을 입력하여 그 차이를 비교증폭하는 차동증폭수단과, 각각의 내부 회로에 상응하는 상기 내부전압을 독립적으로 분리되어 구동하는 각각의 내부전압 드라이버 수단을 구비함을 특징으로 하는 내부전압 변환회로.An internal voltage converting circuit of a semiconductor integrated device which generates an internal voltage by inputting an external power supply voltage, comprising: a reference voltage generating means for generating a reference voltage, and an internal reference voltage for maintaining a constant internal voltage level by inputting the reference voltage; A level shifter means to be generated, a differential amplification means for inputting an output voltage of the internal reference voltage and the current source means to amplify the difference, and independently driving the internal voltage corresponding to each internal circuit separately. And an internal voltage driver means. 제1항에 있어서, 상기 내부전압 드라이버 수단은 최소한 1개이상으로 구성되어 독립적으로 분리 구동되고, 컬렉터 단자가 상기 외부전원압이 실리는 내부 전원선에 접속하며, 베이스 단자가 상기 커런트 소오스 수단의 상기 출력전압에 접속하며, 에미터 단자가 상기 내부회로에 접속하는 바이폴라 트랜지스터로 구성됨을 특징으로 하는 내부전압 변환회로.2. The apparatus of claim 1, wherein the internal voltage driver means comprises at least one of the internal voltage driver means and is independently separated and driven, wherein a collector terminal is connected to an internal power line carrying the external power supply voltage, and a base terminal of the current source means. And a bipolar transistor connected to the output voltage and having an emitter terminal connected to the internal circuit. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940030258A 1994-11-17 1994-11-17 Internal voltage transfer circuit of semiconductor lsi apparatus KR0162988B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940030258A KR0162988B1 (en) 1994-11-17 1994-11-17 Internal voltage transfer circuit of semiconductor lsi apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940030258A KR0162988B1 (en) 1994-11-17 1994-11-17 Internal voltage transfer circuit of semiconductor lsi apparatus

Publications (2)

Publication Number Publication Date
KR960019292A true KR960019292A (en) 1996-06-17
KR0162988B1 KR0162988B1 (en) 1999-02-01

Family

ID=19398233

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940030258A KR0162988B1 (en) 1994-11-17 1994-11-17 Internal voltage transfer circuit of semiconductor lsi apparatus

Country Status (1)

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KR (1) KR0162988B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100695037B1 (en) * 2005-09-15 2007-03-14 삼성전자주식회사 Circuit and method for generating internal supply voltage of a semiconductor memory device

Also Published As

Publication number Publication date
KR0162988B1 (en) 1999-02-01

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