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KR960002608A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
KR960002608A
KR960002608A KR1019940014818A KR19940014818A KR960002608A KR 960002608 A KR960002608 A KR 960002608A KR 1019940014818 A KR1019940014818 A KR 1019940014818A KR 19940014818 A KR19940014818 A KR 19940014818A KR 960002608 A KR960002608 A KR 960002608A
Authority
KR
South Korea
Prior art keywords
wafer
cleaning method
wafer cleaning
aqueous solution
solution
Prior art date
Application number
KR1019940014818A
Other languages
Korean (ko)
Inventor
문환성
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940014818A priority Critical patent/KR960002608A/en
Publication of KR960002608A publication Critical patent/KR960002608A/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 웨이퍼 세정방법에 관한 것으로, 소정의 공정을 거친 웨이퍼를 후공정을 실시하기 전에 세척(cleaning)할때, NH4OH, H2O2, H2O의 혼합용액인 NH4OH 수용액에서 NH2OH의 농도를 낮추어 희석된 NH4OH 수용액을 사용하므로써 웨이퍼 표면의 거칠어짐(roughness)을 방지하여 후공정으로 웨이퍼상에 형성될 층(예를들어, 산화막등)이 균일하고 결함(defect)의 발생을 억제할 수 있는 웨이퍼 세척방법에 관한 것이다.The present invention relates to a wafer cleaning method, for rinsing (cleaning) before carrying out the post-process of the wafer subjected to a predetermined process, NH 4 OH, H 2 O 2, a mixed solution of H 2 O NH 4 OH aqueous solution By lowering the concentration of NH 2 OH in the solution, the diluted NH 4 OH aqueous solution is used to prevent the roughness of the surface of the wafer so that the layer (e.g., oxide film, etc.) to be formed on the wafer in a post process is uniform and defective ( It relates to a wafer cleaning method that can suppress the occurrence of defects).

Description

웨이퍼 세척방법Wafer cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2C도는 본 발명에 으한 웨이퍼 세척방법을 설명하기 위한 웨이퍼의 단면도.2A to 2C are cross-sectional views of the wafer for explaining the wafer cleaning method according to the present invention.

Claims (2)

웨이퍼 세척방법에 있어서, 소정의 공정을 거친 웨이퍼(11)를 NH4OH, H2O2, H2O의 혼합으로 이루어진 NH4OH 수용액을 사용하여 세척공정을 실시하되, NH2OH의 농도를 낮추어 희석된 NH4OH 수용액을 사용하는 것을 특징으로 하는 웨이퍼 세척방법.In the wafer cleaning method, the wafer 11 having undergone a predetermined process is washed using an aqueous NH 4 OH solution consisting of a mixture of NH 4 OH, H 2 O 2 , and H 2 O, but with a concentration of NH 2 OH. Lowering the wafer cleaning method, characterized in that using diluted NH 4 OH aqueous solution. 제1항에 있어서, 상기 NH4OH 수용액은 NH4OH : H2O2: H2O=1:20:100의 혼합비로된 것을 특징으로 하는 웨이퍼 세척방법.The method of claim 1, wherein the NH 4 OH aqueous solution is mixed at a ratio of NH 4 OH: H 2 O 2 : H 2 O = 1: 20: 100. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940014818A 1994-06-27 1994-06-27 Wafer cleaning method KR960002608A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940014818A KR960002608A (en) 1994-06-27 1994-06-27 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940014818A KR960002608A (en) 1994-06-27 1994-06-27 Wafer cleaning method

Publications (1)

Publication Number Publication Date
KR960002608A true KR960002608A (en) 1996-01-26

Family

ID=66686461

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014818A KR960002608A (en) 1994-06-27 1994-06-27 Wafer cleaning method

Country Status (1)

Country Link
KR (1) KR960002608A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445057B1 (en) * 2001-12-31 2004-08-21 주식회사 하이닉스반도체 Method of cleaning semiconductor wafer in back end of line

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445057B1 (en) * 2001-12-31 2004-08-21 주식회사 하이닉스반도체 Method of cleaning semiconductor wafer in back end of line

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