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KR950032543A - Si-O 함유 피막을 형성시키는 방법 - Google Patents

Si-O 함유 피막을 형성시키는 방법 Download PDF

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Publication number
KR950032543A
KR950032543A KR1019950008228A KR19950008228A KR950032543A KR 950032543 A KR950032543 A KR 950032543A KR 1019950008228 A KR1019950008228 A KR 1019950008228A KR 19950008228 A KR19950008228 A KR 19950008228A KR 950032543 A KR950032543 A KR 950032543A
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coating
hydrogen silsesquioxane
silsesquioxane resin
support
heating
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KR1019950008228A
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찰즈 카밀레티 로버트
찰즈 댈 프레드릭
케이 던 다이애너
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노만 에드워드 루이스
다우 코닝 코포레이션
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Publication of KR950032543A publication Critical patent/KR950032543A/ko

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    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

본 발명은 Si-O 함유 피막을 전자 지지체 의에 형성하는 방법에 관한 것이다. 이 방법은 수소 실세스퀴옥산수지를 습윤 암모니아, 무수 암모니아 및 산소하에서 연속적으로 가열하는 단계를 포함한다. 생성된 피막은 개선된 화학적, 전기적 및 기계적 특성을 갖는다.

Description

Si-O함유 피막을 형성시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 수소 실세스퀴옥산 수지를 포함하는 도료를 전자 지지체 위에 피복하는 단계(a),피복된 지지체를 암모니아와 습기를 함유하는 대기하에 75내지 400°C의 온도에서 15분 이상 가열하는 단계(b), 단계(b)로부터 수득된 피복된 지지체를 거의 무수 암모니아만을 함유하는 대기하에 75내지 400°C의 온도에서 15분 이상 동안 가열하는 단계(c) 및 단계(c)로부터 수득된 피복된 지지체를 산소 함유 대기하에서 피막을 어닐시키기에 충분하게 15분 이상 동안 150°C이상의 온도로 가열하는 단계(d)를 포함함을 특징으로 하여, Si-O함유 피막을 전자 지지체 위에 형성시키는 방법.
  2. 제1항에 있어서, 수소 실세스퀴옥산 수지가, 지지체를 용매와 수소 실세스퀴옥산 수지를 포함하는 용액으로 피복한 다음, 용매를 증발시키는 공정에 의해 지지체에 피복되는 방법.
  3. 제1항에 있어서, 수소 실세스퀴옥산 수지를 포함하는 피막이 또한 티타늄, 지르코늄, 알루미늄, 탄탈륨, 바나듐, 니오븀, 붕소 및 인 중에서 선택된 원소를 함유하고 알콕시 또는 아실옥시 중에서 선택된 하나 이상의 가수분해성 치환체를 함유하며 피막이 개질된 세라믹 산화물을 0.1내지 30 중량% 함유하는 양으로 존재하는 화합물을 포함하는 개질된 세라믹 산화물 전구체를 함유하는 방법.
  4. 제1항에 있어서, 수소 실세스퀴옥산 수지를 포함하는 피막이 또한, 수소 실세스퀴옥산 수지의 중량을 기준으로 하여, 백금, 로듐 또는 구리가 5 내지 500ppm의 양으로 존재하는 백금, 로듐 또는 구리 촉매를 함유하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950008228A 1994-04-11 1995-04-10 Si-O 함유 피막을 형성시키는 방법 KR950032543A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/225,688 1994-04-11
US08/225,688 US5547703A (en) 1994-04-11 1994-04-11 Method of forming si-o containing coatings

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KR950032543A true KR950032543A (ko) 1995-12-22

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US (1) US5547703A (ko)
EP (1) EP0677872A1 (ko)
JP (1) JPH07283212A (ko)
KR (1) KR950032543A (ko)
TW (1) TW282563B (ko)

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