KR950010563B1 - 온도 의존 특성을 가지는 내부전원전압 발생회로 - Google Patents
온도 의존 특성을 가지는 내부전원전압 발생회로 Download PDFInfo
- Publication number
- KR950010563B1 KR950010563B1 KR1019920018436A KR920018436A KR950010563B1 KR 950010563 B1 KR950010563 B1 KR 950010563B1 KR 1019920018436 A KR1019920018436 A KR 1019920018436A KR 920018436 A KR920018436 A KR 920018436A KR 950010563 B1 KR950010563 B1 KR 950010563B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- power supply
- supply voltage
- internal power
- burn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
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- Dram (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (2)
- 칩의 초기불량을 검출하는 번-인 모드를 수행하기 위하여 번-인 전압 감지부를 가지는 반도체 메모리 장치의 내부전원전압 발생회로에 있어서, 상기 번-인 전압 감지부가, 외부전원전압에 연결되고 모오스트랜지스터의 드레쉬 홀드전압을 이용한 온도보상동작을 수행하는 적어도 4개의 직렬 연결된 전압강하소자부와, 상기 전압강하소자부 및 소정의 기준신호를 입력하고 이를 차동증폭하여 출력하는 비교기를 구비하고, 상기 번-인 언압 감지부가 상기 전압강하소자의 드레쉬 홀드전압의 특성에 의해 온도가 고온으로 될수록 낮은 전압에서 트리거되고, 온도가 저온으로 될수록 높은 전압에서 트리거됨을 특징으로 하는 내부전원전압 발생회로.
- 제 1 항에 있어서, 상기 전압강하소자가 피모오스 트랜지스터로 이루어짐을 특징으로 하는 내부전원전압 발생회로.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920018436A KR950010563B1 (ko) | 1992-10-08 | 1992-10-08 | 온도 의존 특성을 가지는 내부전원전압 발생회로 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920018436A KR950010563B1 (ko) | 1992-10-08 | 1992-10-08 | 온도 의존 특성을 가지는 내부전원전압 발생회로 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940010502A KR940010502A (ko) | 1994-05-26 |
| KR950010563B1 true KR950010563B1 (ko) | 1995-09-19 |
Family
ID=19340796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920018436A Expired - Fee Related KR950010563B1 (ko) | 1992-10-08 | 1992-10-08 | 온도 의존 특성을 가지는 내부전원전압 발생회로 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950010563B1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5970384A (en) | 1994-08-11 | 1999-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Methods of heat treating silicon oxide films by irradiating ultra-violet light |
| KR100549938B1 (ko) * | 1999-01-12 | 2006-02-07 | 삼성전자주식회사 | 반도체 메모리 장치의 내부 전압 변환회로 |
| JP3548535B2 (ja) * | 2001-01-24 | 2004-07-28 | Ｎｅｃエレクトロニクス株式会社 | 半導体回路 |
| DE102004002007B4 (de) * | 2004-01-14 | 2012-08-02 | Infineon Technologies Ag | Transistoranordnung mit Temperaturkompensation und Verfahren zur Temperaturkompensation |
-
1992
- 1992-10-08 KR KR1019920018436A patent/KR950010563B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR940010502A (ko) | 1994-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19921008 |
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| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19921008 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19950318 Patent event code: PE09021S01D |
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| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19950821 |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19951130 |
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