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KR940016496A - Process for producing stable titanium-silicide (TiSi_2) via nickel or cobalt thin films - Google Patents

Process for producing stable titanium-silicide (TiSi_2) via nickel or cobalt thin films Download PDF

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Publication number
KR940016496A
KR940016496A KR1019920026920A KR920026920A KR940016496A KR 940016496 A KR940016496 A KR 940016496A KR 1019920026920 A KR1019920026920 A KR 1019920026920A KR 920026920 A KR920026920 A KR 920026920A KR 940016496 A KR940016496 A KR 940016496A
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KR
South Korea
Prior art keywords
thin film
silicide
cobalt
titanium
nickel
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Application number
KR1019920026920A
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Korean (ko)
Inventor
유상호
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920026920A priority Critical patent/KR940016496A/en
Publication of KR940016496A publication Critical patent/KR940016496A/en

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Abstract

본 발명은 니켈(또는 코발트) 박막을 첨가하여 격자상수 차이를 줄이고 고온 처리시 응집 현상을 방지하는 티타늄-실리사이드 제조 방법에 관한 것으로 접합부(2)가 형성되어 있는 반도체 기판(1) 상부에 산화막(3)을 형성한 후에 콘택(4) 패턴을 형성하는 제 1 단계, 상기 제 1 단계 후에 격자상수 차이를 줄일 수 있고 고온 처리시 응집 현상을 방지하는 니켈(또는 코발트) 박막(6)을 100Å 이하로 증착시키는 제 2 단계, 상기 제 2 단계 후에 상기 니켈(또는 코발트) 박막(6) 상부에 티타늄 박막(6)을 증착하는 제 3 단계, 상기 제 3 단계 후에 열처리를 하여 2상의 티타늄-니켈(또는 코발트)-실리사이드(8)와 계면부근의 니켈(또는 코발트)-실리사이드를 형성하는 제 4 단계, 상기 제 4 단계 후에 상기 티타늄 박막(7)과 니켈(또는 코발트) 박막(6)을 동시에 에칭하여 티타늄-니켈(또는 코발트)-실리사이드(8)을 완성하는 제 5 단계를 포함하여 이루어지는 것을 특징으로 한다.The present invention relates to a titanium-silicide manufacturing method for adding a nickel (or cobalt) thin film to reduce the difference in lattice constant and to prevent agglomeration during high temperature treatment. 3) after forming the contact 4 pattern, the nickel (or cobalt) thin film 6 which can reduce the difference in lattice constant after the first step and prevents the aggregation phenomenon during the high temperature treatment is 100Å or less A second step of depositing a third step; and a third step of depositing a titanium thin film 6 on the nickel (or cobalt) thin film 6 after the second step; and a heat treatment after the third step. Or simultaneously etching the titanium thin film 7 and the nickel (or cobalt) thin film 6 after the fourth step of forming the cobalt) -silicide 8 and the nickel (or cobalt) -silicide near the interface. Tita And a fifth step of completing the nium-nickel (or cobalt) -silicide (8).

Description

니켈 또는 코발트 박막을 통한 안전된 티타늄-실리사이드(TiSi2) 제조 방법Process for producing safe titanium-silicide (TiSi2) via nickel or cobalt thin films

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 기존 콘택부에서 티타늄-실리사이드 형성 방법, 제 2 도는 본 발명에 따른 안정된 티타늄-실리사이드 제조 방법.1 is a method of forming titanium-silicide in an existing contact portion, and FIG. 2 is a method of producing stable titanium-silicide according to the present invention.

Claims (2)

니켈 박막을 통한 안정된 티타늄-실리사이드 제조 방법에 있어서, 접합부(2)가 형성되어 있는 반도체 기판(1) 상부에 산화막(3)을 형성한 후에 콘택(4) 패턴을 형성하는 제 1 단계, 상기 제 1 단계 후에 격자상수 차이를 줄일 수 있고 고온 처리시 응집 현상을 방지할 수 있는 니켈 박막(6)을 100Å 이하로 증착시키는 제 2 단계, 상기 제 2 단계 후에 상기 니켈 박막(6) 상부에 티타늄 박막(7)을 증착하는 제 3 단계, 상기 제 3 단계후에 열처리를 하여 2상의 티타늄-니켈-실리사이드(8)와 격자상수 차이를 줄이는 계면부근의 니켈-실리사이드를 형성하는 제 4 단계, 상기 제 4 단계 후에 상기 티타늄 박막(7)과 니켈 박막(6)을 동시에 에칭하여 티타늄-니켈-실리사이드(8)을 완성하는 제 5 단계를 포함하여 이루어지는 것을 특징으로 하는 티타늄-실리사이드 제조 방법.In the method for producing a stable titanium-silicide through a nickel thin film, the first step of forming a contact (4) pattern after the oxide film (3) is formed on the semiconductor substrate 1 on which the junction portion (2) is formed, the first step A second step of depositing a nickel thin film (6) of 100 Å or less, which can reduce the lattice constant difference after one step and can prevent agglomeration during high temperature treatment, and after the second step, a titanium thin film on the nickel thin film (6) (3) a fourth step of depositing the fourth step of forming a nickel-silicide near the interface which reduces the lattice constant difference between the titanium-nickel-silicide (8) and the two phases by heat treatment after the third step; And a fifth step of simultaneously etching the titanium thin film (7) and the nickel thin film (6) to complete the titanium-nickel-silicide (8). 코발트 박막을 통한 안정된 티타늄-실리사이드 제조 방법에 있어서, 접합부(2)가 형성되어 있는 반도체 기판(1) 상부에 산화막(3)을 형성한 후에 콘택(4) 패턴을 형성하는 제 1 단계, 상기 제 1 단계 후에 격자상수차이를 줄일 수 있고 고온 처리시 응집 현상을 방지할 수 있는 코발트 박막(6)을 100Å 이하로 증착시키는 제 2 단계, 상기 제 2 단계 후에 상기 코발트 박막(6) 상부에 티타늄 박막(7)을 증착하는 제 3 단계, 상기 제 3 단계 후에 열처리를 하여 2상의 티타늄-코발트-실리사이드(8)와 격자상수차이를 줄이는 계면부근의 코발트-실리사이드를 형성하는 제 4 단계, 상기 제 4 단계 후에 상기 티타늄 박막(7)과 코발트 박막(6)을 동시에 에칭하여 티타늄-코발트-실리사이드(8)을 완성하는 제 5 단계를 포함하여 이루어지는 것을 특징으로 하는 티타늄-실리사이드 제조 방법.In the method for producing a stable titanium-silicide through a cobalt thin film, the first step of forming a contact (4) pattern after the oxide film (3) is formed on the semiconductor substrate 1, the junction portion 2 is formed, the first step After the first step, the second step of depositing the cobalt thin film 6 to 100 kPa or less, which can reduce the lattice phase difference and prevent the aggregation phenomenon during the high temperature treatment, and the titanium thin film on the cobalt thin film 6 after the second step. (4) a fourth step of depositing cobalt-silicide near the interface reducing the lattice phase difference with the titanium-cobalt-silicide (8) by performing heat treatment after the third step and the third step; And a fifth step of etching the titanium thin film 7 and the cobalt thin film 6 simultaneously to complete the titanium-cobalt-silicide 8. Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920026920A 1992-12-30 1992-12-30 Process for producing stable titanium-silicide (TiSi_2) via nickel or cobalt thin films KR940016496A (en)

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KR1019920026920A KR940016496A (en) 1992-12-30 1992-12-30 Process for producing stable titanium-silicide (TiSi_2) via nickel or cobalt thin films

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KR1019920026920A KR940016496A (en) 1992-12-30 1992-12-30 Process for producing stable titanium-silicide (TiSi_2) via nickel or cobalt thin films

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KR940016496A true KR940016496A (en) 1994-07-23

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443353B1 (en) * 1997-12-30 2004-09-18 주식회사 하이닉스반도체 Method for forming barrier metal layer of semiconductor device to embody thermal stability and prevent contact resistance from being increased by high temperature heat treatment
KR100641910B1 (en) * 1999-12-30 2006-11-02 주식회사 하이닉스반도체 Method for forming metal line in semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443353B1 (en) * 1997-12-30 2004-09-18 주식회사 하이닉스반도체 Method for forming barrier metal layer of semiconductor device to embody thermal stability and prevent contact resistance from being increased by high temperature heat treatment
KR100641910B1 (en) * 1999-12-30 2006-11-02 주식회사 하이닉스반도체 Method for forming metal line in semiconductor device

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