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KR930017851A - 나프탈렌 유도체, 그의 제조방법 및 그의 합성 중간체 - Google Patents

나프탈렌 유도체, 그의 제조방법 및 그의 합성 중간체 Download PDF

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KR930017851A
KR930017851A KR1019930002269A KR930002269A KR930017851A KR 930017851 A KR930017851 A KR 930017851A KR 1019930002269 A KR1019930002269 A KR 1019930002269A KR 930002269 A KR930002269 A KR 930002269A KR 930017851 A KR930017851 A KR 930017851A
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다메오 이와사끼
가즈히꼬 곤도
가쯔오 이께자와
히데오 긱까와
신수께 야마가따
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지바다 이찌로
다나베세이야꾸 가부시끼가이샤
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Abstract

하기식 [I]의 나프탈렌 유도체, 그의 제조방법 및 그의 합성 중간체에 관한 것으로, 이 화합물은 매우 우수한 기관지 확장 작용을 가지며, 천식의 예방 및 치료에 유용하다:
[상기식에서, R1및R2는 동일하거나 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕식이거나, R1및R2는 상호 결합하여 저급 알킬렌디옥시기를 형성하며, R3는 치환되거나 비치환되는 질소- 함유 6-원 헤테로시클릭기이고, 식:-OR4및 -OR5의 기는 동일하거나 상이하고, 보호되거나 비보호되는 히드록시기이다.]

Description

나프탈렌 유도체, 그의 제조방법 및 그의 합성 중간체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (15)

  1. 하기 일반식[1]의 나프탈렌 유도체 또는 그이 약제학적으로 허용되는 염:
    [상기식에서, R1및R2는 동일하거나, 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕시기이거나, R1및R2는 상호 결합하여 저급 알킬렌디옥시기를 형성하며, R3는 치환되거나 비치환되는 질소-함유 6-원 헤테로시클릭기이고, 식:-OR4및 -OR5의 기는 동일하거나 상이하며, 보호되거나 비보호되는 히드록시기이다].
  2. 제1항에 있어서, R3가 할로겐 원자, 알콕시기 및 알킬기(여기서, 알콕시기 및 알킬기는, 히드록시기, 저급알콕시기, 저급 알콕시-저급 알콕시기, 저급 알킬티오기, 저급 알케닐기, 시아노기, 카르복실기, 저급 알콕시카르보닐기, 아미노카르보닐기, 디-저급 알킬아미노기, 저급 알카노일기, 페닐기, 푸릴기, 테트라히드로푸릴기 및 옥사졸릴기에서 선택되는 기로서 치환될 수도 있다)에서 선택되는 기로서 치환될 수도 있는 피리딜기, N-옥시피리딜기, 2(1H)-피리도닐기, 4,5-디히드로-3(2H)-피리다지노닐기 또는 3(2H)-피리다지노닐기임을 특징으로 하는 화합물.
  3. 제2항에 있어서, R3가, 할로겐 원자로서 치환될 수도 있는 피리딜기, N-옥시피리딜기, 2(1H)-피리도닐기, 4,5-디히드록-3(2H)-피리다디노닐기 또는 3(2H)-피리다디노닐기이거나, 2-알콕시피리딜기 또는 N-알킬 -2(1H)-피리도닐기(여기서, 알콕시기 및 알킬기는, 히드록시기, 저급 알콕시기, 저급 알콕시-저급 알콕시기, 저급 알킬티오기, 저급 알케닐기, 시아노기, 카르복실기, 저급 알콕시카르보닐기, 카르바모일기, 디-저급 알킬아미노기, 페닐기, 푸릴기, 테트라히드로푸릴기, 옥사졸릴기 및 옥소기에서 선택되는 기로서 치환될 수도 있다)임을 특징으로 하는 화합물.
  4. 제1항 내지 3항중 어느 한 항에 있어서, R1및R2는 (1)수소원자, (2)히드록시기, (3)시클로-저급 알킬옥시기, (4)히드록시기, 저급 알콕시기, 저급 알콕시-저급알콕시기, 저급 알콕시카르보닐기 및 페닐기에서 선택되는 기로서 치환될 수도 있는 저급 알콕시기이거나, (5)상호 결합하여 저급 알킬렌디옥시기를형성하는 것을 특징으로 하는 화합물.
  5. 제1항 내지 3항중 어느 한 항에 있어서, 식: -OR4및 -OR5의 기는 동일하거나 상이하고, 저급 알킬기 및 저급 알카노일기에서 선택되는 기로서 보호될 수도 있는 히드록시기임을 특징으로 하는 화합물.
  6. 제4항에 있어서, 식: -OR4및 -OR5의 기는 동일하거나 상이하고 저급 알킬기 및 저급 알카노일기에서 선택되는 기로서 보호될 수도 있는 히드록시기임을 특징으로 하는 화합물.
  7. 제3항에 있어서, R1및R2는 동일 하거나 상이하고, 저급 알콕시기이고, R3는 피리딜기, N-알킬-2(1H)-피리도닐기 또는 N-(저급 알콕시-저급 알킬)-1(1H)-피리도닐기이며, 식:-OR4의 기는 저급 알카노일기로서 보호될 수도 있는 히드록시기이고, 식:-OR5의 기는 히드록시기임을 특징으로 하는 화합물.
  8. 제4항에 있어서, R1및R2는 동일 하거나 상이하고, 저급 알콕시기이고, R3는 피리딜기, N-알킬-2(1H)-피니도닐기 또는 N-(저급 알콕시-저급 알킬-2(1H)-피리도닐기이며, 식:-OR4의 기는 저급 알카노일기로서 보호될 수도 있는 히드록시기이고, 식:-OR5의 기는 히드록시기임을 특징으로 하는 화합물.
  9. 제5항에 있어서, R1및R2는 동일 하거나 상이하고, 저급 알콕시기이고, R3는 피리딜기, N-알킬-2(1H)-피리도닐기 또는 N-(저급 알콕시-저급 알킬-2(1H)-피리도닐기이며, 식:-OR4의 기는 저급 알카노일기로서 보호될 수도 있는 히드록시기이고, 식:-OR5의 기는 히드록시기임을 특징으로 하는 화합물.
  10. 하기 식(Ⅱ)의 화합물 또는 그의 분자내 산무수물을 환원시켜 하기 식[I-a]의 화합물을 수득하는 것을 특징으로 하는 하기 일반식[I]의 화합물 또는 그의 약제학적으로 허용되는 염의 제조방법.
    [상기식에서, R1및R2는 동일하거나 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕시기이거나, R1및R2는 상호 결합하여 저급 알키리렌디옥시기를 형성하며, R3는 치환되거나 비치환되는 질소-함유-6-원 헤테로시클릭이고, 식: -OR4및 -OR5의 기는 동일하거나 상이하고 보호되거나 비보호되는 히드록시기이며, 식:-COOR6및 -COOR7의 기는 유리 카르복실기 또는 에스테르화 카르복실기이고, 나머지 기호는 상기에 정의한 바와같다.]
  11. 하기식[I- b1]의 화합물을 하기식[Ⅲ]의 화합물과 반응시키고, 이어서 식:-OR41및/또는 -OR51의 기가 보호된 히드록시기인 경우, 상기 히드록시기용의 보호기를 제거하는 것을 특징으로 하는 식[I-c]화합물 또는 그의 약제학적으로 허용되는 염의 제조방법:
    [상기식에서, R1및R2는 동일하거나 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕시기이거나, R1및R2는 상호 결합하여 저급 알킬렌디옥시기를 형성하며, 식:-OR4및-OR5의 기는 동일하거나 상이하고, 보호되거나 비보호되는 히드록시기이며, R9는 치환되거나 비치환되는 저급 알킬기이고, 식:-OR41및-OR51의 기는 보호되거나 비보호되는 히드록시기이며, X는 할로겐 원자이고 나머지기호는 상기 정의한 바와같다].
  12. 하기 식[I- e1]의 화합물을 산화시키고, 이어서 식:-OR41및/또는 -OR51의 기가 보호되는 히드록시기인 경우, 상기 히드록시기용의 보호기를 제거하는 것을 특징으로 하는 식[I-c]화합물 또는 그의 약제학적으로 허용되는 염의 제조방법:
    [상기식에서, R1및R2는 동일하거나 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕시기이거나, R1및R2는 상호 결합하여 저급 알킬렌디옥시기를 형성하며, 식:-OR4및-OR5의 기는 동일하거나 상이하고, 보호되거나 비보호되는 히드록시기이며, R9는 치환되거나 비치환되는 저급 알킬기이고, 식:-OR41및-OR51의 기는 보호되거나 비보호되는 히드록시기이며, 나머지기호는 상기에 정의한 바와같다].
  13. 하기 식[Ⅳ]의 화합물을 히드라진과 반응시켜 하기식[I-f]의 화합물을 수득하는 것을 특징으로 하는 하기식[I-h]의 화합물 또는 그의 약제학적으로 허용되는 염의 제조방법:
    [상기식에서, R1및R2는 동일하거나 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕시기이거나, R1및R2는 상호 결합하여 저급 알킬렌디옥시기를 형성하며, 식:-OR4및-OR5의 기는 동일하거나 상이하고, 보호되거나 비보호되는 히드록시기이며, 점선은 단일 결합 또는 이중 결합을 의미하고 식:-OR41및-OR51의 기는 보호되거나 비보호되는 히드록시기이며, 식:-COOR의 기는 유리 카르복실기 또는 에스테르화 카르복실기이고 나머지 기호는 상기 정의한 바와같다].
  14. 하기식[Ⅱ]의 화합물 또는 그의 분자내 산무수물 또는 그의염:
    [상기식에서, R1및R2는 동일하거나 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕시기이거나, R1및R2는 상호 결합하여 저급 알킬렉디옥시기를 형성하며, R3는 치환되거나 비치환되는 질소-함유 6-원 헤테로시클릭기이고, 식:-COOR6및--COOR7의 기는 유리 카르복실기 또는 에스테르화 카르복실기이다.]
  15. 하기 식[Ⅳ]의 화합물 또는 그의 염:
    [상기식에서, R1및R2는 동일하거나 상이하고, 수소원자, 히드록시기, 시클로-저급 알킬옥시기, 치환되거나 비치환되는 저급 알콕시기이거나, R1및R2는 상호 결합하여 저급 알킬렌디옥시기를 형성하며, 식:-OR41및-OR51의 기는 보호되거나 비보호되는 히드록시기이고, 식:COOR의 기는 유리 카르복실기 또는 에스테르화 카르복실기이다.]
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930002269A 1992-02-20 1993-02-18 나프탈렌 유도체, 그의 제조방법 및 그의 합성 중간체 KR100199121B1 (ko)

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