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KR920010284A - 반도체 기판의 표면 산화막에서 금속불순물 분석방법 - Google Patents

반도체 기판의 표면 산화막에서 금속불순물 분석방법 Download PDF

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KR920010284A
KR920010284A KR1019910021393A KR910021393A KR920010284A KR 920010284 A KR920010284 A KR 920010284A KR 1019910021393 A KR1019910021393 A KR 1019910021393A KR 910021393 A KR910021393 A KR 910021393A KR 920010284 A KR920010284 A KR 920010284A
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South Korea
Prior art keywords
oxide film
metal impurities
semiconductor substrate
aluminum
surface oxide
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KR1019910021393A
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KR0163596B1 (ko
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주리 가토
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아이자와 스스무
세이코 엡슨 가부시키가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/60—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables, e.g. electrographic flaw testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/20—Metals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

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  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

내용 없음

Description

반도체 기판의 표면 산화막에서 금속불순물 분석방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 자연산화막 또는 열산화막중에서 Fe 농도와 고정전하량의 상관관계를 나타낸 도면.
제2도는 열산환막의 깊이 방향에서 Fe의 분포를 나타낸 도면.
제3도는 자연 산화막상에 열산화막을 형성한 경우에 Al 농도와 고정전하량의 상관관계를 나타낸 도면.

Claims (6)

  1. 반도체 기판상에 형성된 표면 산화막중에 존재하는 금속불순물에 기인한 고정 전하량을 측정하여 상기 금속 불순물량과 상기 고정 전하량의 상관관계를 구하고, 이 상관관계에 의거하여 피분석대상인 표면 산화막의 고정 전하량에 의해 그 산화막중의 금속불순물을 측정하는 것을 특징으로 하는 반도체 기판의 표면 산화막에서 금속 불순물 분석방법.
  2. 제1항에 있어서, 상기 표면 산화막이 자연 산화막 또는 열산화막인 것을 특징으로 하는 반도체 기판의 표면 산화막에서 금속 불순물 분석방법.
  3. 제1항에 있어서, 상기 금속 불순물이 적어도 철 및 알류미늄 중 어느 하나인 것을 특징으로 하는 반도체 기판의 표면 산화막에서 금속 불순물 분석방법.
  4. 실리콘 기판상에 형성된 열산화막의 깊이 방향 거리와, 상기 열산화막중의 금속 불순물에 기인한 고정 전하량과의 상관관계를 구하고, 또한 이것과는 별도로 산화막중에서 금속 불순물량과 이것에 기인한 고정 전하량과의 상관관계를 구하고, 이러한 상관관계를 기초로 하여 상기 열산화막에서 의 상기 금속 불순물의 농도 분포를 구하는 것을 특징으로 하는 반도체 기판의 표면 산화막에서 금속 불순물 분석방법.
  5. 제4항에 있어서, 상기 금속 불순물이 알루미늄인 것을 특징으로 하는 반도체 기판의 표면 산화막에서 금속 불순물 분석방법.
  6. 자연산화막에서 열산화막속으로 이동한 철 및 알루미늄중 알루미늄만이 전하를 갖는데 의거하여 사전에 측정된 자연산화막속의고정 전하량과 열산화막속의 알루미늄에 기인한 고정전하량의 비교검토함으로서 자연 산화막에서의 철 또는 알루미늄을 정성적으로 분석사는 것을 특징으로 하는 반도체 기판의 표면 산화막에서 금속 불순물 분석방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910021393A 1990-11-26 1991-11-26 반도체 기판의 표면 산화막에서 금속불순물 분석방법 KR0163596B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-321763 1990-11-26
JP32176390 1990-11-26

Publications (2)

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KR920010284A true KR920010284A (ko) 1992-06-26
KR0163596B1 KR0163596B1 (ko) 1999-05-01

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KR1019910021393A KR0163596B1 (ko) 1990-11-26 1991-11-26 반도체 기판의 표면 산화막에서 금속불순물 분석방법

Country Status (7)

Country Link
US (1) US5298860A (ko)
EP (1) EP0488149B1 (ko)
JP (1) JP3044881B2 (ko)
KR (1) KR0163596B1 (ko)
DE (1) DE69119365T2 (ko)
SG (1) SG45200A1 (ko)
TW (1) TW312745B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030004173A (ko) * 2002-10-31 2003-01-14 (주)뉴크린-탑 속건성 목욕가운
KR100445020B1 (ko) * 2000-05-09 2004-08-18 에이저 시스템즈 가디언 코포레이션 정량 원소 분석을 위한 검정 방법
EP2710179A2 (en) * 2011-04-28 2014-03-26 Philip Leonard Textile thread or fibre

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DE4305297C2 (de) * 1993-02-20 1998-09-24 Telefunken Microelectron Strukturbeize für Halbleiter und deren Anwendung
JPH07153808A (ja) * 1993-09-24 1995-06-16 Shin Etsu Handotai Co Ltd 結合型基板の結合界面のボロン評価方法
JPH0888259A (ja) * 1994-09-14 1996-04-02 Komatsu Electron Metals Co Ltd 半導体基板評価のための表面処理方法
JP2967398B2 (ja) 1995-09-18 1999-10-25 信越半導体株式会社 シリコンウエーハ内部の不純物分析方法
JPH10178077A (ja) * 1996-12-17 1998-06-30 Nec Corp 半導体基板の定量汚染試料の作製方法
US5943552A (en) * 1997-02-06 1999-08-24 Seh America, Inc. Schottky metal detection method
JP3223869B2 (ja) 1997-11-17 2001-10-29 日本電気株式会社 不純物濃度の定量方法
JP4761179B2 (ja) * 2001-07-19 2011-08-31 信越半導体株式会社 ウェーハ表面に吸着したボロン濃度の測定方法及び環境雰囲気中のボロンレベルの評価方法
US6664120B1 (en) * 2001-12-17 2003-12-16 Cypress Semiconductor Corp. Method and structure for determining a concentration profile of an impurity within a semiconductor layer
US7319530B1 (en) * 2004-03-29 2008-01-15 National Semiconductor Corporation System and method for measuring germanium concentration for manufacturing control of BiCMOS films
WO2006099498A2 (en) * 2005-03-14 2006-09-21 Qc Solutions, Inc. Semiconductor wafer metrology apparatus and methods
CN101131371B (zh) * 2007-10-08 2010-06-02 苏州阿特斯阳光电力科技有限公司 一种精炼冶金硅的杂质含量检测分析方法
JP2009259960A (ja) * 2008-04-15 2009-11-05 Sumco Corp 半導体基板の重金属検出方法
ITGE20110082A1 (it) * 2011-07-28 2013-01-29 Sirtres S R L Piede di appoggio per stabilizzatori .
US9553160B2 (en) 2013-10-09 2017-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for monitoring impurity in high-K dielectric film

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DD283311A7 (de) * 1981-11-24 1990-10-10 Sieber,Nina,Dd Verfahren zur herstellung von stabilen mos-anordnungen
US4551674A (en) * 1982-11-12 1985-11-05 At&T Bell Laboratories Noncontacting conductivity type determination and surface state spectroscopy of semiconductor materials
US4598249A (en) * 1984-02-29 1986-07-01 Rca Corporation Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US4827212A (en) * 1988-01-20 1989-05-02 Semitest, Inc. Noninvasive method and apparatus for characterization of semiconductors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445020B1 (ko) * 2000-05-09 2004-08-18 에이저 시스템즈 가디언 코포레이션 정량 원소 분석을 위한 검정 방법
KR20030004173A (ko) * 2002-10-31 2003-01-14 (주)뉴크린-탑 속건성 목욕가운
EP2710179A2 (en) * 2011-04-28 2014-03-26 Philip Leonard Textile thread or fibre
EP2710179B1 (en) * 2011-04-28 2024-12-04 Philip Leonard Textile thread

Also Published As

Publication number Publication date
DE69119365D1 (de) 1996-06-13
KR0163596B1 (ko) 1999-05-01
US5298860A (en) 1994-03-29
JPH0541433A (ja) 1993-02-19
EP0488149A2 (en) 1992-06-03
TW312745B (ko) 1997-08-11
SG45200A1 (en) 1998-01-16
DE69119365T2 (de) 1996-11-07
EP0488149A3 (en) 1993-03-17
EP0488149B1 (en) 1996-05-08
JP3044881B2 (ja) 2000-05-22

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