KR20220084880A - Atomic layer deposition apparatus for heater and shower head - Google Patents

Abstract

The present invention relates to an atomic layer deposition coating apparatus for atomic layer thin film coating of heaters and showerheads, and atomic layer thin film coating of heaters and showerheads for uniformly depositing atomic layer thin film coatings on surfaces of heaters and showerheads It relates to an atomic layer thin film deposition coating apparatus for To this end, the shower head is disposed on the upper part of the inner space, the heater plate part is disposed on the lower part of the inner space, and a chamber part in which an atomic layer deposition space is formed for coating the surface of the heater plate part and the shower head with an atomic layer thin film. An atomic layer deposition supply unit for sequentially supplying a layer thin film deposition gas, an atomic layer deposition gas supply pipe connecting and connecting the atomic layer deposition supply unit and the shower head unit to supply the atomic layer thin film deposition gas supplied from the atomic layer deposition supply unit to the shower head unit; A vacuum pump connected to and connected to the chamber to exhaust unreacted residues in the chamber of the atomic layer deposition gas supplied from the atomic layer deposition supply unit, and a reaction residue of the atomic layer deposition gas supplied from the atomic layer deposition supply unit Disclosed is an atomic layer deposition coating apparatus for atomic layer thin film coating of a heater and showerhead, characterized in that it includes an atomic layer thin film deposition gas exhaust pipe connecting and connecting the chamber part and the vacuum pump part to exhaust.

Description

Atomic layer deposition apparatus for heater and shower head atomic layer deposition coating apparatus for atomic layer thin film coating

The present invention relates to an atomic layer thin film deposition coating apparatus for atomic layer thin film coating of a heater and a showerhead, and more particularly, to a heater and a showerhead for uniformly depositing an atomic layer thin film coating on the surfaces of a heater and a showerhead It relates to an atomic layer thin film deposition coating apparatus for atomic layer thin film coating.

Heater, a semiconductor or display manufacturing process component, is strengthening its plasma and corrosion resistance through anodizing aluminum alloy. The shower head is used in a bare (non-surface-treated aluminum) state, but recently, a coating shower head using anodizing has been developed and applied. In the case of anodizing semiconductor or display process parts, the resistance is better than the bare state, but it is weak in plasma and corrosion resistance because gas penetrates easily into the pore layer of anodizing. In addition, since there is a film thickness variation due to alloy components applied to semiconductor or display process parts, there is a problem in that the resistance is partially weak.

Looking in more detail, anodizing is being carried out on the heater and shower head to enhance corrosion resistance to NF ₃ gas used in the semiconductor or display manufacturing process. In the case of the anodizing film, gas penetration by the pore layer is easy, and there are places where the resistance is partially weak due to the thickness deviation due to the alloy component, so it is vulnerable to the plasma environment and NF ₃ gas, and corrosion of semiconductor or display process parts proceeds. Damaged film cannot be regenerated, and since it has to be peeled off and re-anodized, there is a problem that production efficiency is lowered due to time loss and short PM cycle.

KR 10-0744528 KR 10-1027954 KR 10-1696252 KR 20-0457336

Therefore, the present invention was created to solve the above-mentioned problems, and since ALD coating on the surface of a semiconductor or display process component can form a uniform and thin atomic layer thin film through a self-limiting adsorption process, An object of the present invention is to provide an invention that can delay corrosion of equipment by improving plasma properties and corrosion resistance.

However, the objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

The above object of the present invention is to provide an atomic layer thin film deposition space for coating the surface of the heater plate and the shower head with an atomic layer thin film, in which a shower head unit is disposed on the upper portion of the inner space and a heater plate unit is disposed on the lower portion of the inner space. Atomic layer connecting and connecting the atomic layer deposition supply unit and the shower head to supply the atomic layer deposition gas supplied from the chamber unit to be formed, the atomic layer deposition supply unit for sequentially supplying the atomic layer deposition gas, and the atomic layer deposition supply unit to the shower head unit A layer thin film deposition gas supply pipe, a vacuum pump connected to and connected to the chamber to exhaust unreacted residues in the chamber of the atomic layer deposition gas supplied from the atomic layer deposition supply unit, atomic layer deposition supplied from the atomic layer deposition supply unit By providing an atomic layer deposition coating apparatus for atomic layer thin film coating of a heater and showerhead, characterized in that it includes an atomic layer thin film deposition gas exhaust pipe connecting and connecting the chamber part and the vacuum pump part to exhaust the reaction residue of the gas can be achieved.

In addition, it includes a plasma power supply unit for supplying a plasma bias voltage, a plasma bias application plate unit for receiving the plasma bias voltage to form a plasma in the atomic layer thin film deposition space so that the atomic layer thin film deposition gas is in a plasma state.

In addition, the plasma bias application plate part is made of a conductive material to which a plasma bias voltage can be applied, and is disposed in the space between the lower surface of the heater plate part and the lower surface of the chamber part by at least the width of the heater plate part, so that in the atomic layer thin film deposition space to form a plasma.

In addition, it further includes a chamber wall heating wire part disposed along the wall edge of the chamber part, and a showerhead heating wire part disposed inside the shower head part, and the temperature of the atomic layer thin film deposition space is obtained by the chamber wall heating wire part and the showerhead heating wire part. It is maintained and formed according to the set temperature condition.

In addition, the shower head unit is formed in plurality in the injection plate portion and the injection plate portion, and sprays a source gas for substrate deposition mounted on the upper surface of the heater plate portion, and communicates with the atomic layer deposition gas supply pipe to provide an atomic layer deposition gas. Includes a gas supply hole for injecting.

In addition, the atomic layer deposition supply unit includes a precursor supply unit for supplying a precursor, a reaction gas supply unit for supplying a reaction gas, and a purge gas supply unit for supplying a purge gas, and the atomic layer deposition gas supplied from the atomic layer deposition supply unit is a precursor and is a reaction gas.

In addition, after operating the plasma power supply unit to operate the atomic layer deposition supply unit after plasma is formed in the atomic layer thin film deposition space, and after operating the precursor supply unit to supply the precursor to the atomic layer thin film deposition space, the purge gas supply unit and the vacuum pump unit The purge gas supply unit operates to exhaust the unreacted precursor not deposited on the surfaces of the heater plate unit and the shower head by operating the reactive gas supply unit to supply the reactive gas to the atomic layer thin film deposition space after the unreacted precursor is exhausted. and a control unit configured to operate the vacuum pump unit to exhaust unreacted residues from the surfaces of the heater plate unit and the shower head unit.

According to the present invention as described above, by forming an ALD thin film coating on the surface of the shower head and heater, which are parts of PECVD equipment, the plasma atmosphere formed during the display or semiconductor manufacturing process and the resistance of NF ₃ gas are strengthened to slow the corrosion of equipment. It can work.

In addition, according to the present invention, a thin film having a high density and uniform thickness is formed on the surface of a semiconductor or display manufacturing process component by an ALD method to extend the life of the process component, thereby increasing the PM (cleaning cycle) cycle.

The following drawings attached to the present specification illustrate a preferred embodiment of the present invention, and serve to further understand the technical spirit of the present invention together with the detailed description of the present invention, so the present invention is limited to the matters described in such drawings It should not be construed as being limited.
1 is a view showing a heater plate part and a shower head part disposed inside the chamber part according to an embodiment of the present invention,
2 is a diagram illustrating a configuration for depositing an atomic layer thin film on a heater plate and a shower head according to an embodiment of the present invention.

Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. In addition, one embodiment described below does not unreasonably limit the content of the present invention described in the claims, and it cannot be said that the entire configuration described in the present embodiment is essential as a solution for the present invention. In addition, descriptions of the prior art and matters obvious to those skilled in the art may be omitted, and the description of the omitted components (methods) and functions may be sufficiently referenced within the scope not departing from the technical spirit of the present invention.

Atomic layer deposition coating apparatus for atomic layer thin film coating of a heater and showerhead according to an embodiment of the present invention is an ALD (atomic layer deposition) method for the heater unit 10 and the shower head 200 disposed in a chamber It is a device to enhance corrosion resistance by coating it with a thin film. Hereinafter, an atomic layer thin film deposition coating apparatus for atomic layer thin film coating of a heater and a showerhead according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIG. 1 , the shower head unit 200 is disposed in an upper area of the inner area of the chamber unit 100 , and the heater plate unit 11 is disposed in a lower area. In the inner region of the chamber part 100 , the process parts arrangement region where the heater plate part 11 and the shower head part 200 are disposed, and the surface of the heater plate part 11 and the shower head part 200 are coated with an atomic layer thin film. An atomic layer thin film deposition space is formed.

The shower head 200 receives a source gas from an external source gas supply and evenly sprays the source gas in the chamber. To this end, the shower head 200 includes a spray plate 201 and a gas supply hole 202 . A plurality of gas supply holes 202 are formed in the injection plate part 201 at regular intervals. For example, when the injection plate part 201 has a circular cross-section, the gas supply holes 202 may be formed at regular intervals along the circumference of the circle. As described above, as the gas supply holes 202 are evenly formed in the injection plate part 201 , the source gas supplied from the outside can be uniformly injected into the chamber. In this case, the source gas may be a gas for depositing on a wafer (not shown) as an example mounted on the upper surface of the heater plate unit 11 . The gas supply hole 202 may inject not only a source gas but also an atomic layer thin film deposition gas. Therefore, the gas supply hole 202 in the present invention injects not only the source gas but also the atomic layer thin film deposition gas.

The heater unit 10 is disposed in a lower region of the shower head unit 200 , and the heater unit 10 includes a heater plate unit 11 and a heater shaft unit 12 . The heater plate part 11 is disposed in the lower region of the shower head part 200 , and the heater shaft part 12 protrudes to the outside of the chamber part 100 while supporting the heater plate part 11 from the lower part. In order for the heater shaft part 12 to protrude to the outside of the chamber part 100, a through groove (not shown) is formed in the chamber part 100, and the heater shaft part 12 protrudes to the outside through the through groove. to maintain the airtightness in the chamber. A heater heating wire part 10a for heating the substrate to a uniform temperature is disposed inside the heater plate part 11 .

As an example, the shower head unit 200 and the heater plate unit 11 as described above are continuously exposed to a plasma environment during the process of a semiconductor or display manufacturing process chamber, and are exposed to corrosive gas such as NF ₃ gas to corrode. In order to prevent such corrosion, in the present invention, an atomic layer thin film is deposited in the inner space of the chamber part 100 in order to coat the surfaces of the shower head part 200 and the heater plate part 11 with an Atomic Layer Deposition (ALD) thin film. form a space

As shown in FIG. 2 , in one embodiment of the present invention for ALD thin film coating of the surfaces of the heater plate part 11 and the shower head part 200 , the heating wire part 300 , the atomic layer deposition plasma part 400 , It includes an atomic layer deposition supply unit 500 and an atomic layer thin film deposition supply and exhaust unit 600 .

The heating wire part 300 includes the chamber wall heating wire part 310 and the showerhead heating wire part 320 in order to provide a uniform temperature during the ALD thin film coating of the surfaces of the heater plate part 11 and the shower head part 200 . include The chamber wall heating wire unit 310 is disposed along the inner circumferential surface of the chamber wall 101 as shown in FIG. 2 . The showerhead heating wire part 320 is disposed in the inner space of the shower head part 200 . According to the shape of the chamber part 100 and the shower head part 200, the shape of the chamber wall heating wire part 310 and the showerhead heating wire part 320 is also made in the same way. As shown in FIG. 2 , the showerhead heating wire part 320 is disposed in the inner space of the shower head part 200 while forming the same width as the spray plate part 201 . Since the chamber wall heating wire part 310 is disposed along the inner edge surface or the inner circumferential surface of the chamber wall 101 , it is disposed to surround the outer space of the shower head part 200 and the heater part 10 .

The atomic layer deposition plasma unit 400 draws radicals of the reactive gas supplied from the reactive gas supply unit 520 by forming plasma for atomic layer deposition coating in the atomic layer thin film deposition space, thereby forming the heater plate unit 11 and the shower head. It is possible to increase the deposition efficiency of the atomic layer thin film on the surface of the part 200 . To this end, the atomic layer deposition plasma unit 400 includes a plasma bias application plate unit 410 and a plasma power supply unit 420 .

The plasma bias application plate unit 410 is disposed on a lower bottom surface of the chamber unit 100 in the lower region of the heater plate unit 11 . It is preferable that the plasma bias applying plate unit 410 be disposed at least as wide as the heater plate unit 11 . The plasma bias applying plate unit 410 is preferably made of a material such as aluminum, copper, or nickel to apply a plasma bias voltage.

The plasma power supply unit 420 supplies RF power through which plasma can be formed to the plasma bias application plate unit 410 . The plasma power supply unit 420 is electrically connected to the plasma bias application plate unit 410 through the heater shaft unit 12 . It is preferable that the plasma power supply unit 420 adjusts the step-up speed of the RF power under the control of the control unit 700 and applies it to the plasma bias application plate unit 410 .

The atomic layer deposition supply unit 500 includes a precursor supply unit 510 , a reaction gas supply unit 520 , a purge gas supply unit 530 , and an injection amount control unit (not shown). In order to perform atomic layer deposition (ALD), first, a precursor is supplied to the atomic layer thin film deposition space through the precursor supply unit 510 , and then a reactive gas reacting with the precursor is supplied to the atomic layer thin film deposition space through the reaction gas supply unit 520 . supplied with Finally, by supplying the purge gas to the atomic layer thin film deposition space through the purge gas supply unit 530 , the precursor or reaction gas remaining unreacted is discharged to the outside. The injection amount adjusting unit (not shown) adjusts the injection amount of the precursor, the reaction gas, or the purge gas.

The atomic layer deposition supply unit 500 is connected to the atomic layer thin film deposition gas supply pipe 610 in communication with each other to supply a precursor, a reactive gas, or a purge gas, respectively, into the chamber. A precursor, a reaction gas, or a purge gas, which is an atomic layer thin film deposition gas supplied into the chamber, is uniformly sprayed into the atomic layer thin film deposition space through the gas supply hole 202 . The precursor and the reaction gas injected through the gas supply hole 202 are respectively deposited and reacted on the surfaces of the heater plate 11 and the shower head 200 to form an ALD thin film coating layer on the surface of each process component.

The atomic layer thin film deposition supply and exhaust unit 600 includes an atomic layer thin film deposition gas supply pipe 610 , an atomic layer thin film deposition gas exhaust pipe 620 , and a vacuum pump unit 630 .

One side of the atomic layer deposition gas supply pipe 610 is connected to the atomic layer deposition supply unit 500 , and the other side is connected and connected to the chamber unit 100 to supply the atomic layer deposition gas to the gas supply hole 202 . can A precursor, a reaction gas, or a purge gas is supplied through the atomic layer thin film deposition gas supply pipe 610 .

The atomic layer thin film deposition gas exhaust pipe 620 exhausts unreacted substances according to the atomic layer thin film deposition process in the atomic layer thin film deposition space. That is, after supply of the precursor, the unreacted precursor is exhausted through the purge gas, and the unreacted residue is exhausted through the purge gas after the supply of the reaction gas. During exhaust, the vacuum pump 630 is driven to perform vacuum exhaust.

The control unit 700 controls the temperature of the heating wire unit 300 and controls the heating wire unit 300 to uniformly maintain the temperature of the atomic layer thin film deposition space. The controller 700 drives and controls the atomic layer deposition supply unit 500 , the atomic layer deposition plasma unit 400 , and the vacuum pump unit 630 for atomic layer deposition.

For atomic layer thin film deposition, the controller 700 operates the plasma power supply 420 to form plasma in the atomic layer thin film deposition space. When plasma is formed in the atomic layer thin film deposition space, the control unit 700 operates the precursor supply unit 510 to supply the precursor to the atomic layer thin film deposition space. Next, the control unit 700 operates the purge gas supply unit 530 and the vacuum pump unit 630 to control to exhaust the unreacted precursor from the atomic layer thin film deposition space. Next, the control unit 700 operates the reaction gas supply unit 520 to supply the reaction gas to the atomic layer thin film deposition space. Next, the control unit 700 operates the purge gas supply unit 530 and the vacuum pump unit 630 to control to exhaust the unreacted residues from the atomic layer thin film deposition space.

The atomic layer thin film deposition space means an inner region of the chamber part 100 including the atomic layer deposition surface of the heater plate part 11 and the shower head part 200 . In addition, the thickness of the atomic layer thin film according to an embodiment of the present invention is preferably deposited in a range of several nm to several tens of nm.

In the description of the present invention, the description may be omitted for matters obvious to those skilled in the art and those skilled in the art, and the description of these omitted components (methods) and functions will be sufficiently referenced within the scope not departing from the technical spirit of the present invention. will be able In addition, the above-described components of the present invention have been described for convenience of description of the present invention, and components not described herein may be added within the scope without departing from the technical spirit of the present invention.

The description of the configuration and function of each part described above has been described separately for convenience of description, and if necessary, any configuration and function may be implemented by integrating into other components, or may be implemented more subdivided.

In the above, although described with reference to one embodiment of the present invention, the present invention is not limited thereto, and various modifications and applications are possible. That is, those skilled in the art will readily understand that many modifications are possible without departing from the gist of the present invention. In addition, it should be noted that, when it is determined that a detailed description of a known function related to the present invention and its configuration or a coupling relationship for each configuration of the present invention may unnecessarily obscure the gist of the present invention, the detailed description is omitted. something to do.

10: heater unit
10a: heater heating wire part
11: heater plate part
12: heater shaft part
100: chamber part
101 : Chamber Wall
200: shower head
201: spray plate part
202: gas supply hole
300: hot wire
310: chamber wall heating part
320: shower head heating part
400: atomic layer deposition plasma unit
410: plasma bias application plate portion
420: plasma power supply
500: atomic layer deposition supply unit
510: precursor supply unit
520: reaction gas supply unit
530: purge gas supply unit
600: atomic layer thin film deposition supply and exhaust unit
610: atomic layer thin film deposition gas supply pipe
620: atomic layer thin film deposition gas exhaust pipe
630: vacuum pump unit
700: control unit

Claims (7)

A chamber part in which a shower head part is disposed on the upper part of the inner space, a heater plate part is disposed on the lower part of the inner space, and an atomic layer thin film deposition space for coating the surfaces of the heater plate part and the shower head part with an atomic layer thin film;
An atomic layer deposition supply unit for sequentially supplying an atomic layer thin film deposition gas,
an atomic layer deposition gas supply pipe connecting and connecting the atomic layer deposition supply unit and the shower head unit to supply the atomic layer deposition gas supplied from the atomic layer deposition supply unit to the shower head unit;
a vacuum pump unit connected to and connected to the chamber unit to exhaust unreacted residues in the chamber unit of the atomic layer thin film deposition gas supplied from the atomic layer deposition supply unit;
Atomic layer of a heater and showerhead, characterized in that it includes an atomic layer deposition gas exhaust pipe connecting and connecting the chamber part and the vacuum pump part to exhaust the reaction residue of the atomic layer deposition gas supplied from the atomic layer deposition supply part Atomic layer thin film deposition coating device for thin film coating.
The method of claim 1,
a plasma power supply supplying a plasma bias voltage;
Atomic layer thin film of a heater and showerhead, characterized in that it includes a plasma bias application plate unit for allowing the atomic layer thin film deposition gas to be in a plasma state by receiving the plasma bias voltage to form plasma in the atomic layer thin film deposition space. Atomic layer thin film deposition coating device for coating.
3. The method of claim 2,
The plasma bias application plate unit,
made of a conductive material to which the plasma bias voltage can be applied,
Atomic layer coating of a heater and showerhead, characterized in that the plasma is formed in the atomic layer thin film deposition space by disposing at least as much as the width of the heater plate in the space between the lower surface of the heater plate and the lower surface of the chamber Atomic layer thin film deposition coating device for
4. The method of claim 3,
A chamber wall heating wire portion disposed along the wall edge of the chamber portion,
Further comprising a showerhead heating wire portion disposed inside the shower head portion,
Atomic layer thin film deposition coating for atomic layer thin film coating of a heater and showerhead, characterized in that the temperature of the atomic layer thin film deposition space is maintained and formed according to a preset temperature condition by the chamber wall heating wire part and the showerhead heating wire part Device.
6. The method of claim 5,
The shower head unit,
spray plate,
A gas supply hole formed in a plurality of the injection plate part, injecting a source gas for substrate deposition mounted on the upper surface of the heater plate part, and communicating with the atomic layer thin film deposition gas supply pipe to inject the atomic layer deposition gas Atomic layer thin film deposition coating apparatus for atomic layer thin film coating of a heater and showerhead, characterized in that it comprises a.
6. The method of claim 5,
The atomic layer deposition supply unit,
A precursor supply unit for supplying a precursor,
A reaction gas supply unit for supplying a reaction gas,
It includes a purge gas supply unit for supplying a purge gas,
The atomic layer thin film deposition gas supplied from the atomic layer deposition supply unit is,
Atomic layer deposition coating apparatus for atomic layer thin film coating of heaters and showerheads, characterized in that they are precursors and reactive gases.
7. The method of claim 6,
After the plasma is formed in the atomic layer thin film deposition space by operating the plasma power supply unit, the atomic layer deposition supply unit is operated,
After operating the precursor supply unit to supply the precursor to the atomic layer thin film deposition space, the purge gas supply unit and the vacuum pump unit are operated to exhaust unreacted precursors not deposited on the surfaces of the heater plate unit and the shower head unit make it,
After evacuating the unreacted precursor, the reactive gas supply unit is operated to supply the reactive gas to the atomic layer thin film deposition space, and then the purge gas supply unit and the vacuum pump unit are operated to remove the reaction gas from the surface of the heater plate unit and the shower head unit. Atomic layer deposition coating apparatus for atomic layer thin film coating of heaters and showerheads, characterized in that it further comprises a control unit operating to exhaust unreacted unreacted residues.

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