KR101255763B1 - Substrate processing method - Google Patents

Abstract

The substrate processing method of the present invention includes the steps of loading a substrate, moving the substrate to a deposition position, depositing a thin film on the substrate, moving the substrate on which the thin film deposition is completed, to an etching position, And etching the thin film, wherein etching the thin film is performed at a position lower than the deposition position.

The invention as described above has the effect of increasing the thickness uniformity of the thin film by adjusting the distance between the substrate and the gas nozzle to which the gas is injected.

Deposition, Etching, HDP-CVD, Board Supports, Nozzles, Chambers

Description

Substrate Processing Method {SUBSTRATE PROCESSING METHOD}

1 is a schematic cross-sectional view showing a substrate processing apparatus in which the substrate processing method of the present invention is performed.

2 is a flowchart illustrating a substrate processing method according to the present invention.

3 to 6 are cross-sectional views showing the operation of the substrate processing apparatus of the present invention.

7 is experimental data showing an etching uniformity according to the distance between the substrate and the nozzle of the gas injection unit according to the present invention.

               <Description of the code | symbol about the principal part of drawings>

100: chamber 200: substrate support

210: lower RF power supply 220: elevating member

300: gas injection unit 310: nozzle

400: plasma source 500: transfer robot

The present invention relates to a substrate processing method, and more particularly to a substrate processing method for improving the uniformity of the film during the deposition and etching process in the same chamber.

Recently, due to the tendency of high integration of electric devices, as the design rules become smaller and smaller, new semiconductor manufacturing devices are manufactured. Each of the semiconductor manufacturing devices is a recipe for shortening the manufacturing process cycle of electronic devices in a semiconductor manufacturing line. Has)

In particular, one of the process recipes may refer to a Bosch process that repeatedly performs in-situ deposition and etching processes in the substrate processing apparatus. Here, the Bosch process is performed by repeatedly depositing and etching using different process gases in a substrate processing apparatus, thereby improving the quality of the device, which is widely used to manufacture an electronic device, MEMS (Micro Electro Mechanical System). It is used.

However, as the line width of the semiconductor device is greatly reduced, even if the deposition and etching processes for fabricating the semiconductor device are performed in a single chamber, the process uniformity is different for each process, for example, pressure, type of gas, and the like. This causes a problem that becomes very difficult to maintain.

In addition, since the substrates that are introduced into the process are deposited and etched at the same location in the chamber, a process of optimizing by undergoing a lot of trial and error due to process variables in the chamber in connection with various process condition changes is necessary. The narrow process range leads to the problem of inability to maintain optimum substrate processing uniformity.

However, since the substrates that are introduced into the process are deposited and etched at the same location, a process of optimizing by undergoing a lot of trial and error due to process variables in the chamber with respect to various process condition changes is needed, and thus the process range. The narrowing causes a problem in that the optimum substrate processing uniformity cannot be maintained.

In order to solve the above problems, the substrate processing method of the present invention is a substrate processing method that can form a uniform film on the substrate by changing the distance between the substrate and the gas nozzle is sprayed gas when the deposition and etching is performed To provide that purpose.

In order to achieve the above object, the substrate processing method of the present invention includes loading a substrate, moving the substrate to a deposition position, depositing a thin film on the substrate, and etching the substrate on which the thin film deposition is completed. Moving to a position, and etching the thin film, wherein etching the thin film is performed at a lower position than the deposition position.

The etching position is characterized in that the interval between the substrate and the nozzle of the gas injection unit is 50 to 140mm.

The deposition position is characterized in that the distance between the substrate and the nozzle of the gas injection unit is a few mm to 120m.

The reaction gas injected from the gas injection unit may be injected to have a predetermined inclination with respect to the substrate surface.

Deposition and etching of the thin film is characterized in that using a plasma.

Moving the substrate to a deposition position to etching the thin film may be performed repeatedly.

In addition, in order to achieve the above object, a chamber providing a predetermined space therein, a substrate support installed in the chamber and the substrate is seated, connected to the lower portion of the substrate support for the lifting motion of the substrate support A substrate processing method using an elevating member, a plasma generation source for generating plasma in the chamber, and a gas injector installed on an upper portion of the substrate support and injecting a reactive gas, wherein the substrate is loaded into the chamber to provide the substrate. Resting on the substrate support, raising the substrate support to approach the gas injector, stopping the substrate support and performing a deposition process, stopping the deposition process, and Lowering the support to space the predetermined distance from the gas injector, and the substrate Comprising the steps of: stopping the zones and performing an etching process, it characterized in that it comprises the step of stopping the etching process.

The step of raising the substrate support to approach the gas injector to stop the etching process may be repeatedly performed.

The gas injector has a predetermined inclination with respect to the upper surface of the substrate support.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like reference numerals refer to like elements throughout.

1 is a schematic cross-sectional view showing a substrate processing apparatus in which the substrate processing method of the present invention is performed, FIG. 2 is a flowchart showing a substrate processing method according to the present invention, and FIGS. 3 to 6 are operations of the substrate processing apparatus of the present invention. 7 is an experimental data showing the etching uniformity according to the distance between the substrate and the nozzle of the gas injection unit according to the present invention.

Referring to FIG. 1, a substrate processing apparatus of a high density plasma chemical vapor deposition (HDP-CVD) type according to the present invention is provided with a chamber 100 and a substrate provided under the chamber 100 on which the substrate G is seated. The support 200 includes a gas injector 300 for injecting a reaction gas from the upper portion of the substrate G, and a plasma generator 400 for exciting the gas injected into the chamber 100 with plasma. . In addition, heating means (not shown) may be formed inside the chamber 100 or inside and below the substrate support 200 to form a process temperature in the chamber 100.

The chamber 100 is formed in a cylindrical shape having an upper dome shape, and a predetermined space is formed inside the chamber 100 so as to process the substrate. Here, the gate 110 is provided on the sidewall of the chamber 100 for loading and unloading the substrate G, and the substrate G is disposed outside the chamber 100 through the gate 110. The transfer robot 500 is provided to be adjacent to the gate 110 so as to transfer to the inside of the 100. In addition, an exhaust port 120 and an exhaust pump 130 connected to the exhaust port 120 are provided below the side wall of the chamber 100, and the exhaust port 120 forms a vacuum inside the chamber 100 or the chamber ( The remaining gas after the process in 100 is discharged.

The substrate support 200 is provided below the chamber 100, and the substrate support 200 has a lower RF (Radio Frequency) power source 210 for applying high frequency power to the substrate support 200, and the An elevating member 220 for elevating the substrate support 200 is connected. As a result, the lower RF power supply 210 may apply high frequency to the substrate support 200 to draw ions of the plasma formed in the chamber 100 to the upper portion of the substrate G. The elevating member 220 raises the substrate G seated on the upper portion of the substrate support 200 to maintain the substrate G at a predetermined interval from the nozzle 310 of the gas injector 300. In the above, although one substrate G is shown seated on the substrate support 200, a plurality of substrates G may be seated.

The gas injection unit 300 is formed of a seven-shaped injector type so that the reaction gas can be injected from the upper portion of the substrate (G), the nozzle 310 of the injector-type gas injection unit 300 is formed in a circular shape do. Here, one end of the gas injection unit 300 is formed through the lower portion of the chamber 100, the reaction gas is introduced through the through hole. Of course, the shape of the injector-type gas injection unit 300 is not limited thereto. In addition, although the gas injection unit 300 is illustrated as an injector type, the present invention is not limited thereto, and the gas injection unit 300 may be formed in a shower head method.

The plasma generation source 400 is provided with a coil unit 410 positioned on the outer upper portion of the chamber 100, and the upper RF power source 420 is connected to the coil unit 410. That is, when power is applied to the coil unit 410 by the upper RF power source 420, high frequency power is supplied to the coil unit 410, whereby an electromagnetic field is induced inside the chamber 100, thereby providing the chamber 100. The reaction gas introduced therein is excited in a plasma state.

Hereinafter, a process of the process in the HDP-CVD substrate processing apparatus having the above configuration will be described with reference to FIGS. 2 to 6.

As shown in FIG. 2, the substrate processing method according to the present invention includes loading a substrate (S10), moving the substrate to a deposition position (S20), and depositing a thin film on the substrate (S30). ), Moving the substrate on which the thin film deposition is completed to an etching position (S40), and etching the deposited thin film (S50), wherein the moving of the substrate (S20) to the deposited The step S50 of etching the thin film may be repeatedly performed.

As shown in FIG. 3, when the substrate G is drawn into the chamber 100 from the transfer robot 500 provided outside the chamber 100, the substrate support 200 is moved by the elevating member 220 by a predetermined distance. As shown in FIG. 4, the step of loading the substrate G is performed by mounting the substrate G on the upper portion of the substrate support 200. In this case, when the transfer robot 500 seats the substrate G on the substrate support 200, the transfer robot 500 and the substrate support 200 may not interfere with each other.

Subsequently, as illustrated in FIG. 5, the substrate G is moved up by a predetermined interval to the deposition position where the deposition process is to be performed by the substrate support 200 to move the substrate to the deposition position (S20). Here, the deposition position is preferably a distance (A) between the substrate (G) and the nozzle 310 of the gas injection unit 300 is a few mm to 120mm. This spacing A is a position where the thickness uniformity of the thin film is excellent when the thin film is deposited on the substrate G, that is, the position where the deposition uniformity is optimized. In addition, the deposition position may be changed by the thickness of the thin film deposited on the substrate G, various variables in the chamber 100, for example, the chamber size, the type of the reaction gas, the amount of the reaction gas, and the gas injection method.

Thereafter, a reactive gas to be used for deposition is injected from the nozzle 310 of the gas injector 300, and the reactive gas is plasma-activated by an electromagnetic field induced in the chamber 100 from the plasma generator 400 to activate the activated gas. By moving the ions toward the substrate G, the step S30 of depositing a thin film on the substrate G is performed. Here, the nozzle 310 of the gas injection unit 300 is formed with an inclination of between 0 to 90 degrees with respect to the surface of the substrate (G), whereby the reaction gas can be injected to have a predetermined angle of inclination with respect to the substrate have.

Thereafter, as shown in FIG. 6, the substrate G having the thin film deposition completed is lowered by a predetermined interval to the etching position where the etching process is to be performed by the substrate support 200 to move the substrate to the etching position (S40). do. Here, the position where the thin film is etched is performed at a position lower than the position where the thin film is deposited. Specifically, the etched position where the thin film is etched, that is, the gap B between the substrate G and the nozzle of the gas injection part is The deposition position at which the thin film is deposited, that is, the distance between the substrate G and the nozzle A of the gas injector is greater than that. For example, when the thin film is deposited at a distance of 50 mm between the substrate G and the nozzle 310 of the gas injector 300, the substrate G and the gas injector 300 are etched. It is preferable that the space | interval B of the nozzle 310 of () is 50-140 mm. The gap B is a position where the thickness uniformity of the thin film is excellent when the thin film is etched on the substrate G, that is, the position where the etch uniformity is optimized. In addition, the etching position may be changed by the thickness of the thin film deposited on the substrate G, various variables in the chamber 100, for example, the chamber size, the type of the reaction gas, the amount of the reaction gas, and the gas injection method.

Subsequently, the reaction gas to be etched is injected from the nozzle 310 of the gas injection unit 300, and the reaction gas is converted into plasma by an electromagnetic field induced in the chamber 100, thereby activating the activated ions toward the substrate G. By moving, the step (S50) of etching the thin film deposited on the substrate (G) is performed. Here, the nozzle 310 of the gas injection unit 300 forms a slope between 0 and 90 degrees with respect to the surface of the substrate G, whereby the reaction gas is injected to have a predetermined angle of inclination with respect to the substrate. Can be.

Thereafter, the step S20 of moving the substrate to the deposition position and the step S50 of etching the deposited thin film are repeatedly performed. When the desired thin film is obtained, the substrate G is unloaded to finish the process.

Hereinafter will be described with reference to the experimental data for the process performed through the above process.

The uniformity of the thin film and the thickness of the thin film were measured by repeating the deposition and etching of the thin film. Herein, the uniformity of the thin film means that the thickness of the thin film is uniformly formed over the entire part after the deposition and etching, and the uniformity of 0 means that there is almost no error in the thin film thickness in the entire part of the thin film.

In the deposition of the thin film, a gas containing Si was used as the deposition gas, and the process temperature in the chamber 100 was maintained at 250 to 700 degrees. In addition, the gap A between the substrate G and the nozzle 310 of the gas injector 300 was subjected to the deposition process by varying the gap between several mm and 120 mm.

In addition, during etching of the deposited thin film, an N-containing gas and an O-containing gas were used independently or mixed, and the gap between the substrate G and the nozzle 310 of the gas injection unit 300 was 50. The etching process was performed while varying the interval between 140 mm and 140 mm. The etching position where the thin film is etched was performed at a position lower than the position where the thin film is deposited.

Since the uniformity of the thin film according to the deposition and etching of the thin film is significantly influenced by the uniformity of the deposition, the uniformity of the thin film may be formed by adjusting the etching uniformity.

As shown in FIG. 7, the X axis represents the distance B between the substrate and the nozzle of the gas injector, the Y axis represents the etching uniformity, and the experimental data varies the distance B between the substrate and the nozzle of the gas injector. The amount of change in etching uniformity was measured. That is, the etching uniformity is linearly improved as the distance B between the substrate G and the nozzle 310 of the gas injector 300 increases, in particular, the substrate G and the gas injector 300. When the distance B from the nozzle 310 is 130 mm, the etching uniformity may be maintained within about 3%. This has the effect of increasing the uniformity of the thin film of the substrate (G) only by adjusting the distance between the substrate (G) and the nozzle 310 of the gas injection unit 300.

In the above, the gas injection apparatus according to the present invention has been described by applying to HDP-CVD, but is not limited thereto, and may be applied to CVD, ALD (Atomic Layer Deposition), or etching apparatus having various structures.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the appended claims. You will understand.

As described above, the substrate processing method of the present invention has the effect of increasing the thickness uniformity of the thin film by adjusting the interval between the substrate and the gas nozzles through which the gas is injected.

In addition, the present invention has the effect of reducing the dependence of the system change by adjusting the interval between the substrate and the gas nozzle to which the gas is injected.

Claims (9)

Loading the substrate, Moving the substrate to a deposition position; Depositing a thin film on the substrate; Moving the substrate on which the thin film deposition is completed to an etching position; Etching the thin film Including, Etching the thin film is performed at a position lower than the deposition position. The method of claim 1, wherein the etching position is 50 to 140 mm between the substrate and the nozzle of the gas injector. A substrate processing method of a substrate processing apparatus comprising a substrate support and a gas injection unit, Deposition of the thin film is made, including etching the thin film, Etching of the thin film is a substrate processing method, characterized in that proceeding at a position lower than the position where the deposition of the thin film. A substrate processing method of a substrate processing apparatus comprising a substrate support on which a substrate is seated and a gas injector for injecting a reactive gas, The gap between the substrate and the nozzle of the gas injection unit, And etching the thin film is larger than depositing the thin film. The method of claim 4, wherein the etching of the thin film comprises a distance between 50 and 140 mm between the substrate and the nozzle of the gas injector. The method of claim 1, wherein the deposition and etching of the thin film is performed repeatedly. A chamber providing a predetermined space therein; A substrate support installed in the chamber and on which a substrate is mounted; An elevating member connected to a lower portion of the substrate support and configured to elevate the substrate support; A plasma generator for generating a plasma in the chamber; A gas injector installed on an upper portion of the substrate support to inject reaction gas; In the substrate processing method using A substrate is loaded into the chamber and placed on the substrate support; Raising the substrate support to approach the gas jet; Stopping the substrate support and performing a deposition process; Lowering the substrate support to space the predetermined distance from the gas injector; Stopping the substrate support and performing an etching process; Substrate processing method comprising a. The method of claim 7, wherein the step of raising the substrate support to approach the gas injector to perform the etching process is repeatedly performed. The method of claim 7 or 8, wherein the etching is performed, wherein the spaced apart distance of the gas injector is 50 to 140 mm.

Images