KR20180113542A - An electroless plating plating solution containing a high branching polymer and metal fine particles - Google Patents
An electroless plating plating solution containing a high branching polymer and metal fine particles Download PDFInfo
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- KR20180113542A KR20180113542A KR1020187024683A KR20187024683A KR20180113542A KR 20180113542 A KR20180113542 A KR 20180113542A KR 1020187024683 A KR1020187024683 A KR 1020187024683A KR 20187024683 A KR20187024683 A KR 20187024683A KR 20180113542 A KR20180113542 A KR 20180113542A
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- South Korea
- Prior art keywords
- group
- bond
- plating
- metal
- monomer
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
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- C08F212/36—Divinylbenzene
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
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- C23C18/1841—Multistep pretreatment with use of metal first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1889—Multistep pretreatment with use of metal first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/208—Multistep pretreatment with use of metal first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
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- Mechanical Engineering (AREA)
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- Materials Engineering (AREA)
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- Inorganic Chemistry (AREA)
- Polymers & Plastics (AREA)
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- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Chemically Coating (AREA)
Abstract
[과제] 높은 내열성을 갖고, 부식성 원자를 포함하지 않는 도금 하지층을 형성할 수 있고, 더 나아가 그 제조에 있어서도 저비용화를 실현할 수 있는, 무전해 도금의 전처리공정으로서 이용되는 새로운 하지제를 제공하는 것이다.
[해결수단] 기재 상에 무전해 도금처리에 의해 금속 도금막을 형성하기 위한 무전해 도금 하지제로서, (a)분자내에 2개 이상의 라디칼중합성 이중결합을 갖는 모노머A와, 분자내에 아미드기 및 적어도 1개의 라디칼중합성 이중결합을 갖는 모노머B를 적어도 포함하는 중합성 화합물과, 이 모노머A의 몰수에 대하여 5~200몰%량의 중합개시제C와의 중합물로 이루어진 고분지 폴리머로서, 이 중합물이, 고도로 분지된 중합쇄를 갖고, 또한 이 중합쇄의 말단에 상기 중합개시제C의 라디칼개열단편이 탑재되어 이루어진, 고분지 폴리머, 및 (b)금속 미립자를 포함하는 하지제.[PROBLEMS] To provide a new base material used as a pretreatment step for electroless plating, which has a high heat resistance and can form a plating base layer which does not contain corrosive atoms and can realize a low cost in the production thereof .
[MEANS FOR SOLVING PROBLEMS] An electroless plating pretreatment agent for forming a metal plating film by electroless plating on a substrate, comprising (a) a monomer A having a synthetic double bond in two or more radicals in the molecule, Branched polymer composed of a polymerizable compound containing at least a monomer B having at least one radially polymerizable double bond and a polymerization initiator C in an amount of 5 to 200 mol% based on the number of moles of the monomer A, , A highly branched polymer having a highly branched polymer chain and a radical cleavage fragment of the polymerization initiator C mounted on the end of the polymer chain, and (b) fine metal particles.
Description
본 발명은, 고분지 고분자(고분지 폴리머), 금속 미립자를 포함하는 무전해 도금 하지제에 관한 것이다.The present invention relates to an electroless plating agent containing a high branching polymer (a high branching polymer) and metal fine particles.
무전해 도금은, 기재를 도금액에 침지하는 것만으로, 기재의 종류나 형상에 관계없이 두께가 균일한 피막이 얻어지고, 플라스틱이나 세라믹, 유리 등의 부도체 재료에도 금속 도금막을 형성할 수 있는 점에서, 예를 들어, 자동차부품 등의 수지성형체에 대한 고급감이나 미관의 부여와 같은 장식 용도나, 전자 차폐, 프린트기판 및 대규모 집적회로 등의 배선기술 등, 다양한 분야에 있어서 폭넓게 이용되고 있다.In the electroless plating, a film having a uniform thickness can be obtained regardless of the type and the shape of the substrate by simply immersing the substrate in the plating solution, and a metal plating film can be formed also on an insulator material such as plastic, ceramics, glass, For example, it is widely used in decorative applications such as giving a sense of quality and aesthetics to resin molded articles such as automobile parts and wiring technology such as electronic shielding, printed boards and large-scale integrated circuits.
통상, 무전해 도금에 의해 기재(피도금체) 상에 금속 도금막을 형성하는 경우, 기재와 금속 도금막의 밀착성을 높이기 위한 전처리가 행해진다. 구체적으로는, 우선 다양한 에칭수단에 의해 피처리면을 조면화 및/또는 친수화하고, 이어서, 피처리면 상에 대한 도금촉매의 흡착을 촉진하는 흡착물질을 피처리면 상에 공급하는 감수성화 처리(sensitization)와, 피처리면 상에 도금촉매를 흡착시키는 활성화 처리(activation)를 행한다. 전형적으로는, 감수성화 처리는 염화제일주석의 산성 용액 중에 피처리물을 침지하고, 이에 따라, 환원제로서 작용할 수 있는 금속(Sn2+)이 피처리면에 부착된다. 그리고, 감수성화된 피처리면에 대하여, 활성화 처리로서 염화파라듐의 산성 용액 중에 피처리물을 침지시킨다. 이에 따라, 용액 중의 파라듐이온은 환원제인 금속(주석이온: Sn2+)에 의해 환원되고, 활성인 파라듐촉매핵으로서 피처리면에 부착된다. 이러한 전처리 후, 무전해 도금액에 침지하여, 금속 도금막을 피처리면 상에 형성한다.Normally, when a metal plating film is formed on a base material (plated body) by electroless plating, a pretreatment for enhancing the adhesion between the base material and the metal plating film is performed. Specifically, the surface to be treated is first roughened and / or hydrophilized by various etching means, and then an adsorption material for promoting the adsorption of the plating catalyst on the surface to be treated is supplied to the surface of the object to be treated And an activation process for adsorbing the plating catalyst on the surface to be treated. Typically, the sensitization treatment immerses the object to be treated in an acidic solution of tin chloride, whereby a metal (Sn 2+ ), which can act as a reducing agent, is adhered to the surface to be treated. Then, the object to be treated is immersed in the acidic solution of palladium chloride as the activation treatment with respect to the treated surface subjected to sensitization. Accordingly, the palladium ions in the solution are reduced by the metal (tin ion: Sn 2+ ) which is a reducing agent, and attached to the surface of the workpiece as the active palladium catalyst nuclei. After such pretreatment, the substrate is immersed in an electroless plating solution to form a metal plating film on the surface to be treated.
한편, 덴드리틱(수지상) 폴리머로서 분류되는 고분지 폴리머는, 적극적으로 분지를 도입하고 있으며, 현저한 특징으로서, 의구상(擬球狀)의 부피가 큰 골격을 가지므로, 분산안정성이 우수하다. 나아가 말단기수가 많은 것을 들 수 있다. 이 말단기에 반응성 관능기를 부여한 경우, 상기 폴리머는 매우 고밀도로 반응성 관능기를 갖게 되므로, 예를 들어, 촉매 등의 기능물질의 고감도 포착제, 고감도인 다관능 가교제, 금속 혹은 금속산화물의 분산제 또는 코팅제로서의 응용 등이 기대되고 있다.On the other hand, a highly branched polymer classified as a dendritic (dendritic) polymer is actively introducing a branch, and has a remarkable feature of having a large skeleton of pseudo spherical shape, . Further, there may be a case in which the terminal nodule is large. When a reactive functional group is added to the terminal group, the polymer has a highly reactive functional group. Therefore, for example, a high sensitivity capturing agent for a functional material such as a catalyst, a highly sensitive polyfunctional crosslinking agent, a dispersing agent for a metal or a metal oxide, And so on.
예를 들어, 암모늄기를 갖는 고분지 폴리머 및 금속 미립자를 포함하는 조성물을 무전해 도금의 하지제(도금촉매)로서 사용한 예가 보고되어, 종래의 무전해 도금처리의 전처리공정(조면화처리)에 있어서 문제가 되었던 크롬 화합물(크롬산)의 사용을 회피하고, 또한 전처리의 공정수를 삭감하는 등, 환경면이나 비용면, 번잡한 조작성 등의 다양한 개선을 도모한 무전해 도금 하지제의 제안이 이루어져 있다(특허문헌 1).For example, there has been reported an example in which a composition containing a high branching polymer having an ammonium group and fine metal particles is used as a base agent (plating catalyst) for electroless plating. In the pretreatment step (roughening treatment) of a conventional electroless plating treatment There has been proposed a method for electroless plating which is intended to improve various aspects such as environment, cost and troublesome operability by avoiding the use of a chromium compound (chromic acid) which has become a problem and reducing the number of steps of pretreatment (Patent Document 1).
상술한 무전해 도금의 하지제로서 제안된 암모늄기를 갖는 고분지 폴리머 및 금속 미립자를 포함하는 조성물에 있어서는, 이것을 반도체 제조 등에 있어서의 배선기술에 적용한 경우, 그에 포함되는 고분지 폴리머의 내열온도가 낮으므로, 땜납리플로우나 고온처리에 대하여 이 고분지 폴리머가 분해될 우려가 있다. 또한, 이 고분지 폴리머에는, 그에 포함되는 제4급 암모늄기의 카운터음이온으로서 할로겐이 존재하고, 또한 이 고분지 폴리머의 제조과정상, 이 폴리머내에 황원자가 잔존할 수 있어, 이들에 의한 기재의 부식도 우려된다. 게다가, 이 고분지 폴리머는, 그 합성이 다단계로 행해지므로 제조비용이 높은 것, 제4급 암모늄염은, 종래, 에폭시나 이소시아네이트 등을 이용한 경화성분에 있어서 촉매로서 작용하는 경우가 많아, 제4급 암모늄염구조를 포함하는 고분지 폴리머를 사용함으로써, 무전해 도금 하지제의 바니시의 작성시에 있어서 그 보존안정성에 문제가 발생하기 쉽다.In the composition comprising the high branched polymer having the ammonium group and the metal fine particles proposed as the above-mentioned antireflection agent for electroless plating, when it is applied to the wiring technology in semiconductor manufacturing and the like, the heat resistance temperature of the high branched polymer contained therein is low Therefore, there is a fear that the branch polymer is decomposed by solder reflow or high-temperature treatment. Further, in this high branching polymer, a halogen is present as a counter anion of a quaternary ammonium group contained therein, and a sulfur atom may remain in the polymer in a normal state with the production of the high branching polymer. I am concerned. In addition, since the synthesis of this high branching polymer is carried out in multiple steps, the production cost is high, and the quaternary ammonium salt conventionally acts as a catalyst in a curing component using epoxy, isocyanate, etc., By using a high branching polymer containing an ammonium salt structure, problems arise in the storage stability at the time of making the varnish made of electroless plating plating.
이와 같이, 지금까지 제안된 무전해 도금 하지제에 있어서는, 도금 하지제로서의 도금성능에 더하여, 할로겐원자나 황원자 등의 부식성 원자를 함유하지 않고, 고내열성을 갖는 도금을 부여할 수 있어, 다양한 조성에 용이하게 바니시화 가능하고, 높은 분산안정성을 갖는 것과 같은 다양한 성능, 더 나아가 적은 프로세스로 간편하게 제조할 수 있는 것과 같은 조작성도 포함하고, 충분히 실현한 무전해 도금 하지제는 제안은 지금까지 없다.As described above, in the electroless plating plating solution proposed so far, it is possible to impart plating with high heat resistance without containing corrosive atoms such as halogen atoms and sulfur atoms in addition to the plating performance as a plating base agent, The present invention is not limited to the electroless plating plating solution which has been sufficiently realized and includes the operability such as various performance such as having high dispersion stability,
본 발명은 이러한 과제에 착안하여, 높은 내열성을 갖고, 부식성 원자를 포함하지 않는 도금 하지층을 형성할 수 있고, 더 나아가 그 제조에 있어서도 저비용화를 실현할 수 있는, 무전해 도금의 전처리공정으로서 이용되는 새로운 하지제의 제공을 목적으로 한다.An object of the present invention is to provide a method of manufacturing a plating base layer which has high heat resistance and which does not contain corrosive atoms and which can be used in a pretreatment step of electroless plating The purpose of this article is to provide a new restriction system.
본 발명자들은, 상기 목적을 달성하기 위하여 예의 검토한 결과, 아미드기와 바람직하게는 환상 골격을 함유하고, 단지 부식성 원자를 포함하지 않는 고분지 폴리머를 검토하여, 이 고분지 폴리머와 금속 미립자를 조합하고, 이것을 기재 상에 도포하여 얻어지는 층이, 무전해 금속 도금의 하지층으로서 도금성뿐만 아니라, 높은 내열성을 갖고, 게다가 부식의 우려가 없는 층이 되는 것을 발견하고, 본 발명을 완성시켰다.DISCLOSURE OF THE INVENTION The present inventors have intensively studied in order to attain the above object and as a result, they have studied a high branching polymer containing an amide group and preferably a cyclic skeleton and not containing only a corrosive atom, combining this high branching polymer with metal fine particles , And found that a layer obtained by applying this on a substrate has not only plating ability but also high heat resistance as a base layer of electroless metal plating, and furthermore, there is no fear of corrosion, thereby completing the present invention.
즉 본 발명은, 제1 관점으로서, 기재 상에 무전해 도금처리에 의해 금속 도금막을 형성하기 위한 무전해 도금 하지제로서,That is, the present invention provides, as a first aspect, an electroless plating pretreatment agent for forming a metal plating film by electroless plating on a substrate,
(a)분자내에 2개 이상의 라디칼중합성 이중결합을 갖는 모노머A와, 분자내에 아미드기 및 적어도 1개의 라디칼중합성 이중결합을 갖는 모노머B를 적어도 포함하는 중합성 화합물과, 이 모노머A의 몰수에 대하여 5~200몰%량의 중합개시제C의 중합물로 이루어진 고분지 폴리머로서,(a) a polymerizable compound comprising at least monomer A having two or more radical double bonds in the molecule and monomer B having an amide group and at least one radical double intermolecular double bond, and a polymerizable compound having a number of moles of the monomer A As a high branched polymer composed of a polymer of a polymerization initiator C in an amount of 5 to 200 mol%
이 중합물이, 적어도 하기 식[1] 그리고 식[2] 또는 식[3]으로 표시되는 구조부분을 포함하여 구성되는 고도로 분지된 중합쇄를 갖고, 또한 이 중합쇄의 말단에 상기 중합개시제C의 라디칼개열단편이 탑재되어 이루어진, 고분지 폴리머, 및Wherein the polymer has a highly branched polymer chain comprising at least a structural moiety represented by the following formula [1] and formula [2] or formula [3], and at the end of the polymerization chain, A branched polymer prepared by incorporating a radical cleavage fragment, and
(b)금속 미립자(b) metal fine particles
를 포함하는 하지제에 관한 것이다.And the like.
[화학식 1][Chemical Formula 1]
(식 중,(Wherein,
R1, R2, R3, R4, R5 및 R6은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,R 1 , R 2 , R 3 , R 4 , R 5 and R 6 each independently may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond An alkyl group having 1 to 10 carbon atoms,
A1은 단결합 또는 2가의 유기기를 나타내고,A 1 represents a single bond or a divalent organic group,
R7, R8 및 R9는, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,R 7 , R 8 and R 9 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, ,
R10 및 R11은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기 또는 페닐기를 나타내거나, R10과 R11이 하나가 되어 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 2 내지 6의 알킬렌기를 형성할 수도 있고,R 10 and R 11 each independently represent an alkyl group having 1 to 10 carbon atoms or a phenyl group which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, , R 10 and R 11 may be taken together to form an alkylene group having 2 to 6 carbon atoms which may contain at least one bond selected from the group consisting of an ether bond, an amide bond and an ester bond,
R12, R13 및 R14는, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,R 12 , R 13 and R 14 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, ,
R15 및 R16은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타낸다.)R 15 and R 16 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond.
제2 관점으로서, 상기 (a)고분지 폴리머 중의 아미드기에, 상기 (b)금속 미립자가 부착 또는 배위한 복합체를 포함하는, 제1 관점에 기재된 하지제에 관한 것이다.As a second aspect, the present invention relates to the antifogging agent according to the first aspect, wherein the amide group in the (a) high branching polymer includes the composite for adhering or distributing the (b) metal fine particles.
제3 관점으로서, 상기 모노머A가, 비닐기 또는 (메트)아크릴로일기 중 어느 일방 또는 쌍방을 갖는 화합물인, 제1 관점 또는 제2 관점에 기재된 하지제에 관한 것이다.As a third aspect, the present invention relates to a release agent as described in the first aspect or the second aspect, wherein the monomer A is a compound having either or both of a vinyl group or a (meth) acryloyl group.
제4 관점으로서, 상기 모노머A가, 디비닐 화합물 또는 디(메트)아크릴레이트 화합물인, 제3 관점에 기재된 하지제에 관한 것이다.As a fourth aspect, the present invention relates to the retarding agent according to the third aspect, wherein the monomer A is a divinyl compound or a di (meth) acrylate compound.
제5 관점으로서, 상기 모노머A가, 탄소원자수 3~30의 방향환기, 또는 탄소원자수 3~30의 지환식기를 갖는 화합물인, 제4 관점에 기재된 하지제에 관한 것이다.In a fifth aspect, the monomer A is a compound having an aromatic ring having 3 to 30 carbon atoms or an alicyclic group having 3 to 30 carbon atoms.
제6 관점으로서, 상기 모노머A가 디비닐벤젠 또는, 트리시클로[5.2.1.02,6]데칸디메탄올디(메트)아크릴레이트인, 제5 관점에 기재된 하지제에 관한 것이다.As a sixth aspect, the present invention relates to the retarding agent according to the fifth aspect, wherein the monomer A is divinylbenzene or tricyclo [5.2.1.0 2,6 ] decanedimethanol di (meth) acrylate.
제7 관점으로서, 상기 중합개시제C가 아조계 중합개시제인, 제1 관점 내지 제6 관점 중 어느 하나에 기재된 하지제에 관한 것이다.As a seventh aspect, the present invention relates to a curing agent according to any one of the first to sixth aspects, wherein the polymerization initiator C is an azo-based polymerization initiator.
제8 관점으로서, 상기 중합성 화합물은, 상기 모노머A의 몰수에 대하여 5~300몰의 양의 상기 모노머B를 포함하는, 제1 관점 내지 제7 관점 중 어느 하나에 기재된 하지제에 관한 것이다.In an eighth aspect, the polymerizable compound relates to the restraining agent according to any one of the first to seventh aspects, wherein the polymerizable compound comprises the monomer B in an amount of 5 to 300 moles relative to the number of moles of the monomer A.
제9 관점으로서, 상기 A1은, 탄소원자수 3~30의 방향환기, 또는 탄소원자수 3~30의 지환식기를 갖는 2가의 유기기를 나타내는, 제1 관점에 기재된 하지제에 관한 것이다.In a ninth aspect, A 1 represents an aromatic ring having 3 to 30 carbon atoms or a divalent organic group having an alicyclic group having 3 to 30 carbon atoms.
제10 관점으로서, 상기 (a)고분지 폴리머가, 적어도 상기 식[1] 그리고 식[2]로 표시되는 구조부분을 포함하는 중합쇄를 구성하는 중합물로 이루어진 고분지 폴리머로서,As a tenth aspect, there is provided a highly branched polymer wherein the (a) high branched polymer is composed of a polymer constituting at least a polymer chain including structural moieties represented by the formulas [1] and [2]
식[1] 중,In the formula [1]
R1, R2, R5 및 R6은 수소원자를 나타내고,R 1 , R 2 , R 5 and R 6 represent a hydrogen atom,
R3, R4는 수소원자 또는 메틸기를 나타내고,R 3 and R 4 represent a hydrogen atom or a methyl group,
A1은 페닐렌기 또는 트리시클로[5.2.1.02,6]데칸-4,8-디일-디(메틸렌옥시카르보닐)기를 나타내고,A 1 represents a phenylene group or a tricyclo [5.2.1.0 2,6 ] decane-4,8-diyl-di (methyleneoxycarbonyl) group,
식[2] 중,In formula [2]
R7, R8 및 R9는 수소원자를 나타내고,R 7 , R 8 and R 9 represent a hydrogen atom,
R10 및 R11은, 각각 독립적으로 수소원자 또는 메틸기를 나타내거나, R10과 R11이 하나가 되어 n-프로필렌기를 나타내고,R 10 and R 11 each independently represent a hydrogen atom or a methyl group, or R 10 and R 11 are combined to form an n-propylene group,
이 중합쇄의 말단에 2,2'-아조비스(2-메틸부티로니트릴) 및 디메틸2,2'아조비스(2-메틸프로피오네이트)로부터 선택되는 중합개시제C의 라디칼개열단편이 탑재되어 이루어진,A radical cleavage fragment of a polymerization initiator C selected from 2,2'-azobis (2-methylbutyronitrile) and dimethyl 2,2 'azobis (2-methylpropionate) is loaded at the end of the polymerization chain Made,
제1 관점에 기재된 하지제에 관한 것이다.And relates to a restraint system described in the first aspect.
제11 관점으로서, 상기 (b)금속 미립자가, 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 파라듐(Pd), 은(Ag), 주석(Sn), 백금(Pt) 및 금(Au)으로 이루어진 군으로부터 선택되는 적어도 1종의 금속의 미립자인, 제1 관점 내지 제10 관점 중 어느 하나에 기재된 하지제에 관한 것이다.As an eleventh aspect, there is provided a method for producing a metal fine particle, wherein the metal fine particle (b) is at least one selected from the group consisting of Fe, Co, Ni, Cu, Pd, Ag, Wherein the fine particles are at least one kind of metal selected from the group consisting of platinum (Pt) and gold (Au).
제12 관점으로서, 상기 (b)금속 미립자가, 파라듐 미립자인, 제11 관점에 기재된 하지제에 관한 것이다.In a twelfth aspect, the metal particle (b) is a paradium microparticle.
제13 관점으로서, 상기 (b)금속 미립자가, 1~100nm의 평균입경을 갖는 미립자인, 제1 관점 내지 제12 관점 중 어느 하나에 기재된 하지제에 관한 것이다.In a thirteenth aspect, the present invention relates to the antifogging agent according to any one of the first to twelfth aspects, wherein the (b) fine metal particles are fine particles having an average particle diameter of 1 to 100 nm.
제14 관점으로서, 추가로 (c)아민 화합물을 함유하는, 제1 관점 내지 제13 관점 중 어느 하나에 기재된 하지제에 관한 것이다.As a fourteenth aspect, the present invention relates to a restraining agent according to any one of the first to thirteenth aspects, further comprising (c) an amine compound.
제15 관점으로서, 제1 관점 내지 제14 관점 중 어느 하나에 기재된 무전해 도금 하지제로 이루어진 층인, 무전해 금속 도금의 하지층에 관한 것이다.As a fifteenth aspect, the present invention relates to an undercoat layer of electroless metal plating, which is a layer made of an electroless plating plating solution as described in any one of the first to fourteenth aspects.
제16 관점으로서, 제15 관점에 기재된 무전해 금속 도금의 하지층 상에 형성된 금속 도금막에 관한 것이다.As a sixteenth aspect, the present invention relates to a metal plating film formed on a base layer of electroless metal plating according to the fifteenth aspect.
제17 관점으로서, 기재와, 이 기재 상에 형성된 제15 관점에 기재된 무전해 금속 도금의 하지층과, 이 무전해 금속 도금의 하지층 상에 형성된 금속 도금막을 구비하는, 금속 피막기재에 관한 것이다.In a seventeenth aspect, the present invention relates to a metal film base comprising a base material, a base layer of the electroless metal plating described in the fifteenth aspect formed on the base material, and a metal plating film formed on the base layer of the electroless metal plating .
제18 관점으로서, 하기 A공정 및 B공정을 포함하는, 금속 피막기재의 제조방법에 관한 것이다.As an eighteenth aspect, the present invention relates to a method for producing a metal film base material, which comprises the steps A and B described below.
A공정: 제1 관점 내지 제14 관점 중 어느 하나에 기재된 무전해 도금 하지제를 기재 상에 도포하고, 무전해 금속 도금의 하지층을 이 기재 상에 구비하는 공정,Step A: A step of applying the electroless plating plating treatment agent described in any one of the first aspect to the 14th aspect on a substrate and providing a base layer of electroless metal plating on the substrate,
B공정: 이 하지층을 구비한 기재를 무전해 도금욕에 침지하고, 금속 도금막을 이 하지층 상에 형성하는 공정.Step B: A step of immersing the base material having the base layer in an electroless plating bath to form a metal plating film on the base layer.
본 발명의 하지제는, 기재 상에 도포하는 것만으로 용이하게 무전해 도금의 하지층을 형성할 수 있다. 또한 본 발명에 의하면, 우수한 도금성능과 높은 내열성을 갖고, 또한 기판의 부식의 우려가 없는, 도금의 하지층을 형성할 수 있다. 게다가 본 발명의 하지제는, 다양한 조성으로 용이하게 바니시화가 가능하며, 높은 분산안정성을 갖는 것으로 할 수 있다.The base coat of the present invention can be easily formed into a base layer of electroless plating only by coating on a base material. Further, according to the present invention, it is possible to form a base layer for plating which has excellent plating performance and high heat resistance and is free from corrosion of the substrate. In addition, the anticorrosion agent of the present invention can be easily varnished in various compositions and can have high dispersion stability.
나아가 본 발명의 하지제에 사용하는 고분지 폴리머는, 적은 프로세스로 간편하게 조제가능한 점에서, 도금 하지제의 제조공정의 간략화와 제조비용의 저감도 도모할 수 있다.Further, since the high branching polymer used in the undercoating of the present invention can be easily prepared with a small number of processes, it is possible to simplify the manufacturing process of the plating substrate and to reduce the manufacturing cost.
또한 본 발명의 무전해 도금 하지제로부터 형성된 무전해 금속 도금의 하지층은, 무전해 도금욕에 침지하는 것만으로, 용이하게 금속 도금막을 형성할 수 있고, 기재와 하지층, 그리고 금속 도금막을 구비하는 금속 피막기재를 용이하게 얻을 수 있다.Further, the base layer of the electroless metal plating formed from the electroless plating base material of the present invention can easily form a metal plating film only by immersing in an electroless plating bath, and is provided with a substrate, a foundation layer, and a metal plating film Can easily be obtained.
즉, 본 발명의 무전해 도금 하지제를 이용하여 기재 상에 하지층을 형성함으로써, 기재와의 밀착성이 우수하고, 내열성을 갖는 금속 도금막을 형성할 수 있다.That is, by forming the ground layer on the substrate using the electroless plating plating solution of the present invention, a metal plating film having excellent adhesion with the substrate and having heat resistance can be formed.
도 1은, 중합예 5에서 얻어진 고분지 폴리머5(DVB, NVA, V-59)의 13C NMR스펙트럼을 나타낸 도면이다.
도 2는, 중합예 6에서 얻어진 고분지 폴리머6(DVB, NVP, V-59)의 13C NMR스펙트럼을 나타낸 도면이다.
도 3은, 중합예 7에서 얻어진 고분지 폴리머7(DCP, NVP, V-59)의 13C NMR스펙트럼을 나타낸 도면이다.Brief Description of the Drawings Fig. 1 is a diagram showing 13 C NMR spectra of the highly branched polymer 5 (DVB, NVA, V-59) obtained in Polymerization Example 5.
2 is a diagram showing a 13 C NMR spectrum of the highly branched polymer 6 (DVB, NVP, V-59) obtained in Polymerization Example 6. Fig.
3 is a diagram showing the 13 C NMR spectrum of the high branching polymer 7 (DCP, NVP, V-59) obtained in Polymerization Example 7.
이하, 본 발명에 대하여 상세하게 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 하지제는, (a)상술의 특정의 구조부분을 갖는 고분지 폴리머, 및 (b)금속 미립자를 포함하고, 필요에 따라 (c)아민 화합물을 포함하는 하지제이다.The anticorrosion agent of the present invention is a restraint agent containing (a) a high branching polymer having the specific structural moiety mentioned above, (b) metal fine particles, and optionally (c) an amine compound.
본 발명의 하지제는 기재 상에 무전해 도금처리에 의해 금속 도금막을 형성하기 위한 촉매로서 호적하게 사용된다.The anticorrosion agent of the present invention is suitably used as a catalyst for forming a metal plating film by electroless plating on a substrate.
<(a)고분지 폴리머>< (a) High branching polymer &
본 발명의 하지제에 이용하는 고분지 폴리머(이하, 아미드기함유 고분지 폴리머라고도 칭함)는, 분자내에 2개 이상의 라디칼중합성 이중결합을 갖는 모노머A와, 분자내에 아미드기 및 적어도 1개의 라디칼중합성 이중결합을 갖는 모노머B를 적어도 포함하는 중합성 화합물과, 이 모노머A의 몰수에 대하여 5~200몰%량의 중합개시제C의 중합물로 이루어진 고분지 폴리머이다. 상기 고분지 폴리머는, 이른바 개시제단편탑재(IFIRP)형 고분지 폴리머이며, 그 말단에 중합반응에 사용한 중합개시제C의 단편(라디칼개열단편)을 갖고 있다.The high branching polymer (hereinafter, also referred to as an amide group-containing high branching polymer) used in the undercoating of the present invention is a polymer obtained by polymerizing a monomer A having a synthetic double bond in two or more radicals in a molecule and a monomer A having an amide group and at least one radical Is a highly branched polymer composed of a polymerizable compound containing at least monomer B having a synthetic double bond and a polymerization initiator C in an amount of 5 to 200 mol% based on the number of moles of the monomer A. The high branching polymer is a so-called initiator fragment mounted (IFIRP) type high branching polymer, and has a fragment (radical cleavage fragment) of the polymerization initiator C used at the end of the polymerization reaction.
한편 본 발명에서의 “고분지 폴리머”란, 상기 모노머A와 모노머B의 고분자량 중합체뿐만 아니라, 저분자량중합체인 올리고머도 포함하는 것이다. 즉 본 발명의 고분지 폴리머는, “분지 중합물”로 파악할 수도 있다.The term "highly branched polymer" in the present invention includes not only high molecular weight polymers of the monomers A and B but also oligomers of a low molecular weight polymer. That is, the highly branched polymer of the present invention may be identified as a " branched polymer ".
본 발명의 고분지 폴리머는, 하기 식[1]로 표시되는 구조부분, 즉 상기 모노머A에 포함되는 적어도 2개의 라디칼중합성 이중결합의 중합반응에 의해 형성되는 구조부분과, 하기 식[2] 또는 식[3]으로 표시되는 구조부분, 즉 상기 모노머B의 라디칼중합성 이중결합의 중합반응에 의해 형성되는 구조부분을, 적어도 포함하여 구성되는 고도로 분지된 중합쇄를 갖고, 또한 이 중합쇄의 말단에 중합개시제C의 라디칼개열단편이 탑재되어 이루어진 중합물로 이루어진다.The highly branched polymer of the present invention comprises a structural part formed by a polymerization reaction of a structural part represented by the following formula [1], that is, a synthetic double bond among at least two radicals contained in the monomer A, Or a structural part represented by the formula [3], that is, a structural part formed by the polymerization reaction of a synthetic double bond in the radical of the monomer B, and a polymer chain having a highly branched polymer chain And a radical cleavage fragment of Polymerization Initiator C is mounted on the end.
[화학식 2](2)
(식 중,(Wherein,
R1, R2, R3, R4, R5 및 R6은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,R 1 , R 2 , R 3 , R 4 , R 5 and R 6 each independently may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond An alkyl group having 1 to 10 carbon atoms,
A1은 단결합 또는 2가의 유기기를 나타내고,A 1 represents a single bond or a divalent organic group,
R7, R8 및 R9는, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,R 7 , R 8 and R 9 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, ,
R10 및 R11은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기 또는 페닐기를 나타내거나, R10과 R11이 하나가 되어 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 2 내지 6의 알킬렌기를 형성할 수도 있고,R 10 and R 11 each independently represent an alkyl group having 1 to 10 carbon atoms or a phenyl group which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, , R 10 and R 11 may be taken together to form an alkylene group having 2 to 6 carbon atoms which may contain at least one bond selected from the group consisting of an ether bond, an amide bond and an ester bond,
R12, R13 및 R14는, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,R 12 , R 13 and R 14 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, ,
R15 및 R16은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타낸다.)R 15 and R 16 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond.
상기 탄소원자수 1 내지 10의 알킬기로는, 분지 구조, 환상 구조를 갖고 있을 수도 있고, 또한 아릴알킬기일 수도 있다. 구체적으로는 메틸기, 에틸기, n-프로필기, 이소프로필기, 시클로프로필기, n-부틸기, 이소부틸기, sec-부틸기, tert-부틸기, n-펜틸기, 네오펜틸기, 시클로펜틸기, n-헥실기, 시클로헥실기, n-옥틸기, n-데실기, 1-아다만틸기, 벤질기, 페네틸기 등을 들 수 있다.The alkyl group having 1 to 10 carbon atoms may have a branched structure or a cyclic structure, or may be an arylalkyl group. Specific examples thereof include a methyl group, ethyl group, n-propyl group, isopropyl group, cyclopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert- An n-hexyl group, a cyclohexyl group, an n-octyl group, a n-decyl group, a 1-adamantyl group, a benzyl group and a phenethyl group.
상기 탄소원자수 2 내지 6의 알킬렌기로는, 메틸렌기, 프로필렌기, 부틸렌기, 펜틸렌기, 헥실렌기 등을 들 수 있다.Examples of the alkylene group having 2 to 6 carbon atoms include a methylene group, a propylene group, a butylene group, a pentylene group and a hexylene group.
또한 상기 탄소원자수 1 내지 10의 알킬기, 탄소원자수 2 내지 6의 알킬렌기는, 그들의 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있고, 예를 들어 이들의 결합에 의해 상기 알킬기 등이 중단되어 있을 수도 있고, 상기 알킬기 등의 결합단에 결합해 있어도 된다(예를 들어 옥시알킬렌기 등).The alkyl group having 1 to 10 carbon atoms and the alkylene group having 2 to 6 carbon atoms may contain at least one bond selected from the group consisting of an ether bond, an amide bond and an ester bond, The alkyl group and the like may be interrupted by a bond of the alkyl group, or may be bonded to the bonding end of the alkyl group or the like (for example, an oxyalkylene group).
또한 2가의 유기기로는, 탄소원자수 1 내지 20의 지방족기, 탄소원자수 3~30의 방향환기, 탄소원자수 3~30의 지환식기, 탄소원자수 3 내지 30의 복소환기, 또는 이들의 1종 또는 2종 이상의 조합을 들 수 있다. 이들 지방족기, 방향환기, 지환식기, 복소환기는, 치환기를 갖고 있어도 된다. 또한 이들 지방족기, 방향환기, 지환식기, 복소환기는, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 기 중에 포함하고 있어도 된다.Examples of the divalent organic group include an aliphatic group having 1 to 20 carbon atoms, an aromatic group having 3 to 30 carbon atoms, an alicyclic group having 3 to 30 carbon atoms, a heterocyclic group having 3 to 30 carbon atoms, Or more. These aliphatic groups, aromatic groups, alicyclic groups and heterocyclic groups may have substituents. The aliphatic group, the aromatic ring, the alicyclic group and the heterocyclic group may contain at least one bond selected from the group consisting of an ether bond, an amide bond and an ester bond.
상기 지방족기는, 직쇄상 또는 분지쇄상일 수도 있고, 또한 하나 이상의 불포화결합을 갖고 있을 수도 있고, 예를 들어 탄소원자수 1 내지 20의 알킬렌기를 들 수 있다.The aliphatic group may be linear or branched, may have one or more unsaturated bonds, and may include, for example, an alkylene group having 1 to 20 carbon atoms.
상기 방향환기에서의 방향환으로는, 벤젠, 나프탈렌, 플루오렌, 페난트렌, 안트라센 등을 들 수 있다.Examples of the aromatic ring in the aromatic ring include benzene, naphthalene, fluorene, phenanthrene, and anthracene.
상기 지환식기에서의 지방족환은, 시클로프로판, 시클로부탄, 시클로펜탄, 시클로헥산, 시클로헵탄, 시클로옥탄, 시클로노난, 시클로알칸 및 이들의 축합환 등을 들 수 있다.Examples of the aliphatic ring in the alicyclic group include cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclononane, cycloalkane and condensed rings thereof.
상기 복소환기에서의 복소환으로는, 피리딘, 피리다진, 피리미딘, 피라진, 피페리딘, 피페라진, 피롤, 피라졸, 이미다졸, 피롤리딘, 피라졸리딘, 이미다졸리딘, 푸란, 피란, 티오펜, 티오피란, 이소옥사졸, 이소옥사졸리딘, 모르폴린, 이소티아졸, 이소티아졸리딘, 티오모르폴린, 벤조이미다졸, 벤조푸란, 벤조티오펜, 벤조티아졸, 벤조옥사졸, 트리아진, 퀴논 등을 들 수 있다.Examples of the heterocycle in the heterocyclic group include pyridine, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, pyrrole, pyrazole, imidazole, pyrrolidine, pyrazolidine, imidazolidine, Pyrimidines, pyrimidines, pyridines, pyridines, pyrimidines, pyran, thiophene, thiopyran, isoxazole, isoxazolidine, morpholine, isothiazole, isothiazolidine, thiomorpholine, benzoimidazole, benzofuran, Sol, triazine, quinone, and the like.
이들 중에서도, 상기 A1은, 탄소원자수 3~30의 방향환기, 또는 탄소원자수 3~30의 지환식기를 갖는 2가의 유기기인 것이 바람직하다.Among these, A 1 is preferably a divalent organic group having an aromatic ring having 3 to 30 carbon atoms or an alicyclic group having 3 to 30 carbon atoms.
상기 고분지 폴리머는, 후술하는 모노머A와 모노머B를 적어도 포함하는 중합성 화합물을, 이 모노머A에 대하여 소정량의 중합개시제C의 존재하에서 중합시킴으로써, 일단계로 제조할 수 있다.The above-mentioned highly branched polymer can be prepared in one step by polymerizing a polymerizable compound containing at least monomer A and monomer B to be described later in the presence of a predetermined amount of polymerization initiator C.
[모노머A][Monomer A]
본 발명에 있어서, 분자내에 2개 이상의 라디칼중합성 이중결합을 갖는 모노머A는, 비닐기 또는 (메트)아크릴로일기 중 어느 일방 또는 쌍방을 갖는 것이 바람직하고, 특히 디비닐 화합물 또는 디(메트)아크릴레이트 화합물인 것이 바람직하다. 그 중에서도, 모노머A는, 내열성향상의 관점에서, 탄소원자수 3~30의 방향환기, 또는 탄소원자수 3~30의 지환기를 갖는 화합물인 것이 바람직하다.In the present invention, the monomer A having a synthetic double bond in two or more radicals in the molecule is preferably a vinyl group or a (meth) acryloyl group having either or both of a vinyl group and a di (meth) Acrylate compound. Among them, the monomer A is preferably a compound having an aromatic ring having 3 to 30 carbon atoms or an alicyclic group having 3 to 30 carbon atoms, from the viewpoint of improvement in heat resistance.
한편, 본 발명에서는 (메트)아크릴레이트 화합물이란, 아크릴레이트 화합물과 메타크릴레이트 화합물의 양방을 말한다. 예를 들어 (메트)아크릴산은, 아크릴산과 메타크릴산을 말한다.In the present invention, the (meth) acrylate compound means both of an acrylate compound and a methacrylate compound. For example, (meth) acrylic acid refers to acrylic acid and methacrylic acid.
본 발명에 있어서 사용가능한 모노머A로는, 예를 들어, 이하의 (A1) 내지 (A7)에 나타낸 유기 화합물이 예시된다.As the monomer A usable in the present invention, for example, the following organic compounds shown in (A1) to (A7) are exemplified.
(A1)비닐계 탄화수소류:(A1) Vinyl-based hydrocarbons:
(A1-1)지방족 비닐계 탄화수소류; 이소프렌, 부타디엔, 3-메틸-1,2-부타디엔, 2,3-디메틸-1,3-부타디엔, 1,2-폴리부타디엔, 펜타디엔, 헥사디엔, 옥타디엔 등(A1-1) aliphatic vinyl-based hydrocarbons; Butadiene, 2,3-dimethyl-1,3-butadiene, 1,2-polybutadiene, pentadiene, hexadiene, octadiene, etc.
(A1-2)지환식 비닐계 탄화수소류; 시클로펜타디엔, 시클로헥사디엔, 시클로옥타디엔, 노보나디엔 등(A1-2) alicyclic vinyl-based hydrocarbons; Cyclopentadiene, cyclohexadiene, cyclooctadiene, norbornadiene, etc.
(A1-3)방향족 비닐계 탄화수소류; 디비닐벤젠, 디비닐톨루엔, 디비닐자일렌, 트리비닐벤젠, 디비닐비페닐, 디비닐나프탈렌, 디비닐플루오렌, 디비닐카바졸, 디비닐피리딘 등(A1-3) aromatic vinyl-based hydrocarbons; Examples of the organic solvent include divinylbenzene, divinyltoluene, divinylxylene, trivinylbenzene, divinylbiphenyl, divinylnaphthalene, divinylfluorene, divinylcarbazole, divinylpyridine
(A2)비닐에스테르류, 알릴에스테르류, 비닐에테르류, 알릴에테르류, 비닐케톤류:(A2) vinyl esters, allyl esters, vinyl ethers, allyl ethers, vinyl ketones:
(A2-1)비닐에스테르류; 아디프산디비닐, 말레산디비닐, 프탈산디비닐, 이소프탈산디비닐, 이타콘산디비닐, 비닐(메트)아크릴레이트 등(A2-1) vinyl esters; (Meth) acrylate, divinyl benzene, divinyl benzene, divinyl butyrate, divinyl butyrate, divinyl butyrate, divinyl butyrate,
(A2-2)알릴에스테르류; 말레산디알릴, 프탈산디알릴, 이소프탈산디알릴, 아디프산디알릴, 알릴(메트)아크릴레이트 등(A2-2) allyl esters; Diaryl maleate, diallyl phthalate, diallyl isophthalate, diallyl adipate, allyl (meth) acrylate, etc.
(A2-3)비닐에테르류; 디비닐에테르, 디에틸렌글리콜디비닐에테르, 트리에틸렌글리콜디비닐에테르 등(A2-3) vinyl ethers; Divinyl ether, diethylene glycol divinyl ether, triethylene glycol divinyl ether, etc.
(A2-4)알릴에테르류; 디알릴에테르, 디알릴옥시에탄, 트리알릴옥시에탄, 테트라알릴옥시에탄, 테트라알릴옥시프로판, 테트라알릴옥시부탄, 테트라메타릴옥시에탄 등(A2-4) allyl ethers; Diallyl ether, diallyloxyethane, triallyloxyethane, tetraallyloxyethane, tetraallyloxypropane, tetraallyloxybutane, tetramethallyloxyethane, etc.
(A2-5)비닐케톤류; 디비닐케톤, 디알릴케톤 등(A2-5) vinyl ketones; Divinyl ketone, diallyl ketone, etc.
(A3)(메트)아크릴산에스테르류:(A3) (meth) acrylates:
에틸렌글리콜디(메트)아크릴레이트, 트리에틸렌글리콜디(메트)아크릴레이트, 테트라에틸렌글리콜디(메트)아크릴레이트, 노나에틸렌글리콜디(메트)아크릴레이트, 프로필렌글리콜디(메트)아크릴레이트, 네오펜틸글리콜디(메트)아크릴레이트, 트리메틸올프로판트리(메트)아크릴레이트, 디트리메틸올프로판테트라(메트)아크릴레이트, 글리세롤트리(메트)아크릴레이트, 펜타에리스리톨테트라(메트)아크릴레이트, 알콕시티탄트리(메트)아크릴레이트, 1,6-헥산디올디(메트)아크릴레이트, 2-메틸-1,8-옥탄디올디(메트)아크릴레이트, 1,9-노난디올디(메트)아크릴레이트, 1,10-데칸디올디(메트)아크릴레이트, 트리시클로[5.2.1.02,6]데칸디메탄올디(메트)아크릴레이트, 디옥산글리콜디(메트)아크릴레이트, 2-하이드록시-1-아크릴로일옥시-3-메타크릴로일옥시프로판, 2-하이드록시-1,3-디(메트)아크릴로일옥시프로판, 9,9-비스[4-(2-(메트)아크릴로일옥시에톡시)페닐]플루오렌, 운데실렌옥시에틸렌글리콜디(메트)아크릴레이트, 비스[4-(메트)아크릴로일티오페닐]설파이드, 비스[2-(메트)아크릴로일티오에틸]설파이드, 1,3-아다만탄디올디(메트)아크릴레이트, 1,3-아다만탄디메탄올디(메트)아크릴레이트, 방향족 우레탄디(메트)아크릴레이트, 지방족 우레탄디(메트)아크릴레이트 등Acrylates such as ethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, nonaethylene glycol di (meth) acrylate, propylene glycol di (Meth) acrylate, trimethylolpropane tri (meth) acrylate, ditrimethylolpropane tetra (meth) acrylate, glycerol tri (meth) acrylate, pentaerythritol tetra (Meth) acrylate, 1,9-nonanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, (Meth) acrylate, tricyclo [5.2.1.0 2,6 ] decanedimethanol di (meth) acrylate, dioxane glycol di (meth) acrylate, 2-hydroxy- 3-methacryloyloxypropane, (Meth) acryloyloxyethoxy) phenyl] fluorene, undecylenoxyethylene glycol (2-hydroxyethyl) (Meth) acryloylthiophenyl] sulfide, bis [2- (meth) acryloylthioethyl] sulfide, 1,3-adamantanediol di (meth) acrylate, (Meth) acrylate, aromatic urethane di (meth) acrylate, aliphatic urethane di (meth) acrylate, etc.
(A4)폴리알킬렌글리콜쇄를 갖는 비닐계 화합물:(A4) Vinyl compound having polyalkylene glycol chain:
폴리에틸렌글리콜(분자량 300 등) 디(메트)아크릴레이트, 폴리프로필렌글리콜(분자량 500 등) 디(메트)아크릴레이트 등Di (meth) acrylate, polyethylene glycol (molecular weight 300, etc.) di (meth) acrylate, polypropylene glycol
(A5)함질소비닐계 화합물:(A5) Nitrogen-based vinyl compound:
디알릴아민, 디알릴이소시아누레이트, 디알릴시아누레이트, 에톡시화이소시아눌산디(메트)아크릴레이트, 에톡시화이소시아눌산트리(메트)아크릴레이트, 메틸렌비스(메트)아크릴아미드, 비스말레이미드 등(Meth) acrylate, diallyl isocyanurate, diallyl cyanurate, ethoxy isocyanuric acid di (meth) acrylate, ethoxy isocyanuric acid tri (meth) acrylate, methylene bis (meth) Maleimide etc.
(A6)함규소비닐계 화합물:(A6) Silicon Vinyl compound:
디메틸디비닐실란, 디비닐(메틸)(페닐)실란, 디페닐디비닐실란, 1,3-디비닐-1,1,3,3-테트라메틸디실라잔, 1,3-디비닐-1,1,3,3-테트라페닐디실라잔, 디에톡시비닐실란 등(Methyl) (phenyl) silane, diphenyl divinyl silane, 1,3-divinyl-1,1,3,3-tetramethyldisilazane, 1,3-divinyl-1 , 1,3,3-tetraphenyldisilazane, diethoxyvinylsilane, etc.
(A7)함불소비닐계 화합물:(A7) Fluorine Vinyl compound:
1,4-디비닐퍼플루오로부탄, 1,4-디비닐옥타플루오로부탄, 1,6-디비닐퍼플루오로헥산, 1,6-디비닐도데카플루오로헥산, 1,8-디비닐퍼플루오로옥탄, 1,8-디비닐헥사데카플루오로옥탄 등Divinyl perfluorobutane, 1,4-divinyl perfluorobutane, 1,6-divinyl perfluorohexane, 1,6-divinyldodecafluorohexane, 1,8-di Vinyl perfluorooctane, 1,8-divinyl hexadecafluorooctane, etc.
이들 중 바람직한 것은, 상기 (A1-3)군의 방향족 비닐계 탄화수소 화합물, (A2)군의 비닐에스테르, 알릴에스테르, 비닐에테르, 알릴에테르 및 비닐케톤, (A3)군의 (메트)아크릴산에스테르, (A4)군의 폴리알킬렌글리콜쇄를 갖는 비닐계 화합물, 그리고 (A5)군의 함질소비닐계 화합물이다.Of these, preferred are the aromatic vinyl-based hydrocarbon compounds of the above-mentioned (A1-3) group, vinyl esters, allyl esters, vinyl ethers, allyl ethers and vinyl ketones of the (A2) group, (meth) A vinyl-based compound having a polyalkylene glycol chain of the group (A4), and a nitrogen-containing vinyl compound of the group (A5).
특히 바람직한 것은, (A1-3)군에 속하는 디비닐벤젠, (A2)군에 속하는 프탈산디알릴, (A3)군에 속하는 에틸렌글리콜디(메트)아크릴레이트, 1,3-아다만탄디메탄올디(메트)아크릴레이트, 트리시클로데칸디메탄올디(메트)아크릴레이트 그리고 (A5)군에 속하는 메틸렌비스(메트)아크릴아미드이다. 이들 중에서도 디비닐벤젠, 에틸렌글리콜디(메트)아크릴레이트 및 트리시클로데칸디메탄올디(메트)아크릴레이트가 바람직하고, 특히 디비닐벤젠, 또는, 트리시클로데칸디메탄올디(메트)아크릴레이트가 보다 바람직하다.Particularly preferred are divinylbenzene belonging to the group (A1-3), diallyl phthalate belonging to the group (A2), ethylene glycol di (meth) acrylate belonging to the group (A3), 1,3-adamantanedimethanol di (Meth) acrylate, tricyclodecane dimethanol di (meth) acrylate and methylene bis (meth) acrylamide belonging to the group (A5). Among them, divinylbenzene, ethylene glycol di (meth) acrylate and tricyclodecane dimethanol di (meth) acrylate are preferable, and in particular, divinylbenzene or tricyclodecane dimethanol di (meth) acrylate is preferable. desirable.
이들 모노머A는 1종을 단독으로 사용할 수도 있고, 또한 2종 이상을 병용할 수도 있다.These monomers A may be used singly or in combination of two or more.
[모노머B][Monomer B]
본 발명에 있어서, 모노머B는, 분자내에 아미드기 및 적어도 1개의 라디칼중합성 이중결합을 갖는 화합물이면 특별히 한정되지 않으나, 바람직하게는 라디칼중합성 이중결합으로서 비닐기 또는 (메트)아크릴로일기 중 어느 일방을 적어도 1개 갖는 화합물인 것이 바람직하다. 한편, 모노머B가 라디칼중합성 이중결합으로서 (메트)아크릴로일기를 갖는 화합물인 경우, 이 (메트)아크릴로일기에 포함되는 카르보닐기[-C(=O)-]가, 아미드기에서의 카르보닐기와 중복되는 구조로 되어 있어도 된다.In the present invention, the monomer B is not particularly limited as long as it is a compound having an amide group in the molecule and a synthetic double bond in at least one radical, but preferably a vinyl group or a (meth) acryloyl group It is preferable to be a compound having at least one of them. On the other hand, when the monomer B is a compound having a (meth) acryloyl group as a synthetic double bond in the radical, the carbonyl group [-C (= O) -] included in the (meth) acryloyl group is a carbonyl group And may have a structure that overlaps.
이러한 모노머B로는, 예를 들어 N-비닐피롤리돈, N-비닐포름아미드, N-비닐아세트아미드, N-비닐아미드, N-메틸(메트)아크릴아미드, N-에틸(메트)아크릴아미드, N-프로필(메트)아크릴아미드, N-부틸(메트)아크릴아미드, N-이소부틸(메트)아크릴아미드, N-헥실(메트)아크릴아미드, N-옥틸(메트)아크릴아미드, N-메톡시메틸(메트)아크릴아미드, N-메톡시부틸(메트)아크릴아미드, N-에톡시메틸(메트)아크릴아미드, N-부톡시메틸(메트)아크릴아미드, N-이소부톡시메틸(메트)아크릴아미드, N-이소부톡시에틸(메트)아크릴아미드 등을 들 수 있다.Examples of such a monomer B include N-vinylpyrrolidone, N-vinylformamide, N-vinylacetamide, N-vinylamide, N-methyl (meth) acrylamide, N- (Meth) acrylamide, N-propyl (meth) acrylamide, N-butyl (meth) acrylamide, N-isobutyl (Meth) acrylamide, N-methoxybutyl (meth) acrylamide, N-ethoxymethyl (meth) acrylamide, N-butoxymethyl , N-isobutoxyethyl (meth) acrylamide, and the like.
이들 모노머B는 1종을 단독으로 사용해도 되고, 또한 2종 이상을 병용해도 된다.These monomers B may be used singly or in combination of two or more.
본 발명에 있어서, 상기 모노머A와 상기 모노머B를 공중합시키는 비율은, 반응성이나, 도금성의 관점에서, 바람직하게는 상기 모노머A 1몰에 대하여 상기 모노머B 0.05몰 내지 20몰, 특히 바람직하게는 0.1몰 내지 10몰이다.In the present invention, the copolymerization ratio of the monomer A and the monomer B is preferably from 0.05 mol to 20 mol, particularly preferably from 0.1 mol to 1 mol, based on 1 mol of the monomer A from the viewpoints of reactivity and plating ability Mol to 10 mol.
[기타 모노머][Other monomers]
상기 중합성 화합물에는, 상기 모노머A 및 상기 모노머B와 함께, 기타 모노머로서, 분자내에 적어도 1개의 라디칼중합성 이중결합을 갖고, 단지 아미드기를 갖지 않는 모노머D를 포함하고 있어도 된다.The polymerizable compound may contain, as the other monomers together with the monomer A and the monomer B, a monomer D having a synthetic double bond in at least one radical in the molecule and not having an amide group only.
이러한 모노머D로는, 비닐기 또는 (메트)아크릴기 중 어느 일방을 적어도 1개 갖는 화합물, 및 말레이미드 화합물이 바람직하다.As such monomer D, a compound having at least one of a vinyl group and a (meth) acrylic group, and a maleimide compound are preferable.
그 중에서도, 2-(2-비닐옥시에톡시)에틸아크릴레이트 등의 비닐에테르기함유 (메트)아크릴레이트 화합물; 글리시딜메타크릴레이트 등의 에폭시기함유 (메트)아크릴레이트 화합물; 3-메타크릴옥시프로필트리에톡시실란 등의 알콕시실릴기함유 (메트)아크릴레이트 화합물; 시클로헥실말레이미드, N-벤질말레이미드 등의 말레이미드 화합물 등이 바람직하다.Among them, vinyl ether group-containing (meth) acrylate compounds such as 2- (2-vinyloxyethoxy) ethyl acrylate and the like; Epoxy group-containing (meth) acrylate compounds such as glycidyl methacrylate; Alkoxysilyl group-containing (meth) acrylate compounds such as 3-methacryloxypropyltriethoxysilane; Maleimide compounds such as cyclohexylmaleimide and N-benzylmaleimide are preferred.
본 발명에 있어서, 중합성 화합물이 상기 모노머D를 포함하는 경우, 그 배합비율은, 반응성이나 표면개질효과의 관점에서, 바람직하게는 상기 모노머A 1몰에 대하여 상기 모노머D 0.05몰 내지 3.0몰, 특히 바람직하게는 0.1몰 내지 1.5몰이다.In the present invention, when the polymerizable compound contains the monomer D, the compounding ratio is preferably 0.05 to 3.0 moles of the monomer D relative to 1 mole of the monomer A from the viewpoints of reactivity and surface modifying effect, Particularly preferably from 0.1 mol to 1.5 mol.
[중합개시제C][Polymerization initiator C]
본 발명에서의 중합개시제C로는, 바람직하게는 아조계 중합개시제가 이용된다. 아조계 중합개시제로는, 예를 들어 이하의 (1) 내지 (6)에 나타낸 화합물을 들 수 있다.As the polymerization initiator C in the present invention, an azo-based polymerization initiator is preferably used. Examples of the azo-based polymerization initiator include the following compounds (1) to (6).
(1) 아조니트릴 화합물:(1) Azonitrile compound:
2,2'-아조비스이소부티로니트릴, 2,2'-아조비스(2-메틸부티로니트릴), 2,2'-아조비스(2,4-디메틸발레로니트릴), 1,1'-아조비스(1-시클로헥산카르보니트릴), 2,2'-아조비스(4-메톡시-2,4-디메틸발레로니트릴), 2-(카바모일아조)이소부티로니트릴 등;Azobis (2-methylbutyronitrile), 2,2'-azobis (2,4-dimethylvaleronitrile), 1,1'-azobisisobutyronitrile, Azobis (1-cyclohexanecarbonitrile), 2,2'-azobis (4-methoxy-2,4-dimethylvaleronitrile), 2- (carbamoyl azo) isobutyronitrile;
(2) 아조아미드 화합물:(2) The azoamide compound:
2,2'-아조비스{2-메틸-N-[1,1-비스(하이드록시메틸)-2-하이드록시에틸]프로피온아미드}, 2,2'-아조비스{2-메틸-N-[2-(1-하이드록시부틸)]프로피온아미드}, 2,2'-아조비스[2-메틸-N-(2-하이드록시에틸)프로피온아미드], 2,2'-아조비스[N-(2-프로페닐)-2-메틸프로피온아미드], 2,2'-아조비스(N-부틸-2-메틸프로피온아미드), 2,2'-아조비스(N-시클로헥실-2-메틸프로피온아미드) 등;Azobis {2-methyl-N- [1,1-bis (hydroxymethyl) -2-hydroxyethyl] propionamide}, 2,2'- Azobis [2-methyl-N- (2-hydroxyethyl) propionamide], 2,2'-azobis [N- (N-butyl-2-methylpropionamide), 2,2'-azobis (N-cyclohexyl-2-methylpropionamide Amide) and the like;
(3) 환상 아조아미딘 화합물:(3) Cyclic azoamidine compound:
2,2'-아조비스[2-(2-이미다졸린-2-일)프로판]디하이드로클로라이드, 2,2'-아조비스[2-(2-이미다졸린-2-일)프로판]디설페이트디하이드레이트, 2,2'-아조비스[2-[1-(2-하이드록시에틸)-2-이미다졸린-2-일]프로판]디하이드로클로라이드, 2,2'-아조비스[2-(2-이미다졸린-2-일)프로판], 2,2'-아조비스(1-이미노-1-피롤리디노-2-메틸프로판)디하이드로클로라이드 등;Azobis [2- (2-imidazolin-2-yl) propane] dihydrochloride, 2,2'- Azo bis [2- [1- (2-hydroxyethyl) -2-imidazolin-2-yl] propane] dihydrochloride, 2,2'-azobis [ 2- (2-imidazolin-2-yl) propane], 2,2'-azobis (1-imino-1-pyrrolidino-2-methylpropane) dihydrochloride and the like;
(4) 아조아미딘 화합물:(4) azoamidine compound:
2,2'-아조비스(2-메틸프로피온아미딘)디하이드로클로라이드, 2,2'-아조비스[N-(2-카르복시에틸)-2-메틸프로피온아미딘]테트라하이드레이트 등;Azobis [N- (2-carboxyethyl) -2-methylpropionamidine] tetrahydrate, and the like; 2,2'-azobis (2-methylpropionamidine) dihydrochloride;
(5) 기타:(5) Others:
디메틸2,2'-아조비스이소부틸레이트[디메틸2,2-아조비스(2-메틸프로피오네이트), 2,2'-아조비스(2,4,4-트리메틸펜탄), 1,1'-아조비스(1-아세톡시-1-페닐에탄), 디메틸1,1'-아조비스(1-시클로헥산카르복실레이트), 4,4'-아조비스(4-시아노펜탄산), 4,4'-아조비스-4-시아노발레르산 등.Dimethyl 2,2'-azobisisobutylate [dimethyl 2,2-azobis (2-methylpropionate), 2,2'-azobis (2,4,4-trimethylpentan), 1,1 ' Azobis (1-acetoxy-1-phenylethane), dimethyl 1,1'-azobis (1-cyclohexanecarboxylate), 4,4'- azobis (4-cyanopentanoic acid) 4'-azobis-4-cyanovaleric acid and the like.
(6) 플루오로알킬기함유 아조계 중합개시제:(6) Fluoroalkyl group-containing azo type polymerization initiator:
4,4'-아조비스(4-시아노펜탄산-2-(퍼플루오로메틸)에틸), 4,4'-아조비스(4-시아노펜탄산-2-(퍼플루오로부틸)에틸), 4,4'-아조비스(4-시아노펜탄산-2-(퍼플루오로헥실)에틸) 등.Azobis (4-cyanopentanoic acid-2- (perfluorobutyl) ethyl), 4,4'-azobis (4-cyanopentanoic acid- 4,4'-azobis (4-cyanopentanoic acid-2- (perfluorohexyl) ethyl) and the like.
상기 아조계 중합개시제 중에서도, 도금욕에의 용출이나 도금성의 관점에서, 2,2'-아조비스(2-메틸부티로니트릴), 디메틸2,2'-아조비스이소부틸레이트가 바람직하다.Among the azo-based polymerization initiators, 2,2'-azobis (2-methylbutyronitrile) and dimethyl 2,2'-azobisisobutylate are preferable from the viewpoints of elution into a plating bath and plating ability.
한편, 중합개시제C로서 2,2'-아조비스(2-메틸부티로니트릴)을 이용한 경우, 상기 중합물에서의 중합쇄의 말단에 위치하는 중합개시제C 유래의 라디칼개열단편은 1-메틸-1-시아노-프로필기[-C(CH3)(CN)-CH2CH3]가 된다.On the other hand, when 2,2'-azobis (2-methylbutyronitrile) is used as the polymerization initiator C, the radical scavenging fragment derived from the polymerization initiator C located at the end of the polymer chain in the polymer is 1- - is a propyl group [-C (CH 3) (CN ) -CH 2 CH 3] - cyano.
상기 중합개시제C는, 상기 모노머A의 몰수에 대하여, 5~200몰%의 양으로 사용되고, 바람직하게는 15~200몰%, 보다 바람직하게는 15~170몰%, 보다 바람직하게는 50~100몰%의 양으로 사용된다.The polymerization initiator C is used in an amount of 5 to 200 mol%, preferably 15 to 200 mol%, more preferably 15 to 170 mol%, and still more preferably 50 to 100 mol%, based on the number of moles of the monomer A Mol%.
<고분지 폴리머의 제조방법>≪ Production method of high branching polymer &
본 발명에 이용하는 고분지 폴리머는, 전술한 바와 같이, 상기 모노머A 및 모노머B, 필요에 따라 기타 모노머를 포함하는 중합성 화합물을, 이 모노머A에 대하여 소정량의 중합개시제C의 존재하에서 중합시켜 얻어진다.As described above, the highly branched polymer used in the present invention is obtained by polymerizing a polymerizable compound containing the monomer A and the monomer B and, if necessary, other monomer, in the presence of a predetermined amount of the polymerization initiator C with respect to the monomer A .
전술한 모노머A, 모노머B, 필요에 따라 기타 모노머를 포함하는 중합성 화합물의 중합개시제C의 존재하에서의 중합방법으로는 공지의 방법, 예를 들어 용액중합, 분산중합, 침전중합, 및 괴상중합 등을 들 수 있고, 그 중에서도 용액중합 또는 침전중합이 바람직하다. 특히 분자량제어의 점에서, 유기용매 중에서의 용액중합에 의해 반응을 실시하는 것이 바람직하다.Examples of the polymerization method in the presence of the above-mentioned monomer A, monomer B and other monomer-containing polymerizable compound in the presence of the polymerization initiator C include known methods such as solution polymerization, dispersion polymerization, precipitation polymerization, Among them, solution polymerization or precipitation polymerization is preferable. Particularly, from the viewpoint of molecular weight control, it is preferable to conduct the reaction by solution polymerization in an organic solvent.
이때 이용되는 유기용매로는, 예를 들어, 벤젠, 톨루엔, 자일렌, 에틸벤젠, 테트랄린 등의 방향족 탄화수소류; n-헥산, n-헵탄, 미네랄스피릿, 시클로헥산 등의 지방족 또는 지환식 탄화수소류; 염화메틸, 브롬화메틸, 요오드화메틸, 메틸렌디클로라이드, 클로로포름, 사염화탄소, 트리클로로에틸렌, 퍼클로로에틸렌, 오르토디클로로벤젠 등의 할로겐화물류; 아세트산에틸, 아세트산부틸, 메톡시부틸아세테이트, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 프로필렌글리콜모노메틸에테르아세테이트 등의 에스테르계 또는 에스테르에테르류; 디에틸에테르, 테트라하이드로푸란, 1,4-디옥산, 메틸셀로솔브, 에틸셀로솔브, 부틸셀로솔브, 프로필렌글리콜모노메틸에테르 등의 에테르류; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 디-n-부틸케톤, 시클로헥사논 등의 케톤류; 메탄올, 에탄올, n-프로판올, 이소프로판올, n-부탄올, 이소부탄올, tert-부탄올, 2-에틸헥실알코올, 벤질알코올, 에틸렌글리콜 등의 알코올류; N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈 등의 아미드류; 디메틸설폭사이드 등의 설폭사이드류, 그리고 이들의 2종 이상의 혼합용매를 들 수 있다.Examples of the organic solvent include aromatic hydrocarbons such as benzene, toluene, xylene, ethylbenzene and tetralin; aliphatic or alicyclic hydrocarbons such as n-hexane, n-heptane, mineral spirit and cyclohexane; Halogenated products such as methyl chloride, methyl bromide, methyl iodide, methylene dichloride, chloroform, carbon tetrachloride, trichlorethylene, perchlorethylene and orthodichlorobenzene; Esters or ester ethers such as ethyl acetate, butyl acetate, methoxybutyl acetate, methyl cellosolve acetate, ethyl cellosolve acetate and propylene glycol monomethyl ether acetate; Ethers such as diethyl ether, tetrahydrofuran, 1,4-dioxane, methyl cellosolve, ethyl cellosolve, butyl cellosolve and propylene glycol monomethyl ether; Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, di-n-butyl ketone, and cyclohexanone; Alcohols such as methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, tert-butanol, 2-ethylhexyl alcohol, benzyl alcohol and ethylene glycol; Amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone; Sulfoxides such as dimethyl sulfoxide, and mixed solvents of two or more of these.
이들 중 바람직한 것은, 방향족 탄화수소류, 할로겐화물류, 에스테르류, 에테르류, 케톤류, 알코올류, 아미드류 등이며, 특히 바람직한 것은 벤젠, 톨루엔, 자일렌, 오르토디클로로벤젠, 아세트산에틸, 아세트산부틸, 프로필렌글리콜모노메틸에테르아세테이트, 테트라하이드로푸란, 1,4-디옥산, 메틸셀로솔브, 프로필렌글리콜모노메틸에테르, 메틸에틸케톤, 메틸이소부틸케톤, 메탄올, 에탄올, n-프로판올, 이소프로판올, n-부탄올, 이소부탄올, tert-부탄올, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈 등이다.Particularly preferred among these are aromatic hydrocarbons, halogenated products, esters, ethers, ketones, alcohols and amides. Particularly preferred are benzene, toluene, xylene, orthodichlorobenzene, ethyl acetate, butyl acetate, propylene glycol Methyl ethyl ketone, methyl isobutyl ketone, methanol, ethanol, n-propanol, isopropanol, n-butanol, isopropanol, n- Isobutanol, tert-butanol, N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone and the like.
상기 중합반응을 유기용매의 존재하에서 행하는 경우, 예를 들어 상기 모노머A의 1질량부에 대한 상기 유기용매의 질량은, 통상 0.5~100질량부이며, 더욱 바람직하게는 1~10질량부이다.When the polymerization reaction is carried out in the presence of an organic solvent, for example, the mass of the organic solvent relative to 1 part by mass of the monomer A is usually 0.5 to 100 parts by mass, more preferably 1 to 10 parts by mass.
유기용매의 배합량은 목적물인 고분지 폴리머의 분자량에 따라 적당히 선택할 수 있다. 예를 들어 보다 고분자량의 고분지 폴리머를 설계하는 경우에는 유기용매량을 적게(용매 중의 중합성 화합물의 농도가 고농도가 됨), 반대로, 저분자량의 고분지 폴리머를 설계하는 경우에는 유기용매량을 많게(용매 중의 중합성 화합물의 농도가 저농도가 됨) 하면 된다.The blending amount of the organic solvent can be appropriately selected according to the molecular weight of the target high-molecular-weight polymer. For example, in the case of designing a higher branching polymer having a higher molecular weight, the amount of the organic solvent (the concentration of the polymerizable compound in the solvent becomes a higher concentration) becomes low. On the contrary, when a high molecular weight polymer having a low molecular weight is designed, (The concentration of the polymerizable compound in the solvent becomes low).
중합반응은 상압, 가압밀폐하, 또는 감압하에서 행해지고, 장치 및 조작의 간편함으로부터 상압하에서 행하는 것이 바람직하다. 또한, N2 등의 불활성 가스 분위기하에서 행하는 것이 바람직하다.The polymerization reaction is carried out under atmospheric pressure, in a pressure-tightly closed state or under a reduced pressure, and is preferably carried out under atmospheric pressure from the simplicity of the apparatus and operation. It is also preferable to perform the reaction in an inert gas atmosphere such as N 2 .
중합온도는, 반응혼합물의 비점 이하이면 임의이나, 중합효율과 분자량조절의 점에서, 바람직하게는 50~200℃, 더욱 바람직하게는 70~150℃이다.The polymerization temperature may be any temperature as long as it is below the boiling point of the reaction mixture, but is preferably 50 to 200 占 폚, more preferably 70 to 150 占 폚, from the viewpoints of polymerization efficiency and molecular weight control.
보다 바람직하게는, 상기 중합반응은 반응압력하에서의 상기 유기용매의 환류온도에서 실시되고, 즉, 상기 중합성 화합물, 중합성 개시제 및 유기용매를 포함하는 용액을, 환류상태로 유지된 이 유기용매 중에 적하함으로써, 중합반응을 행하는 것이 바람직하다.More preferably, the polymerization reaction is carried out at a reflux temperature of the organic solvent under a reaction pressure, that is, a solution containing the polymerizable compound, a polymerizable initiator and an organic solvent is introduced into the organic solvent maintained in a reflux state By dropwise addition, it is preferable to carry out the polymerization reaction.
반응시간은, 반응온도나, 중합성 화합물(모노머A, 모노머B, 필요에 따라 기타 모노머) 및 중합개시제C의 종류 및 비율, 중합에 이용하는 유기용매종 등에 따라 변동하는 것이므로 일괄적으로는 규정할 수 없으나, 바람직하게는 30~720분, 보다 바람직하게는 40~540분이다.The reaction time varies depending on the reaction temperature, the type and ratio of the polymerizable compound (monomer A, monomer B, and other monomers as required) and polymerization initiator C, the type of organic solvent used for polymerization, and so on. But is preferably 30 to 720 minutes, and more preferably 40 to 540 minutes.
중합반응의 종료 후, 얻어진 고분지 폴리머를 임의의 방법으로 회수하고, 필요에 따라 세정 등의 후처리를 행한다. 반응용액으로부터 고분자를 회수하는 방법으로는, 재침전 등의 방법을 들 수 있다.After completion of the polymerization reaction, the obtained highly branched polymer is recovered by an arbitrary method, and post-treatment such as washing is carried out if necessary. As a method of recovering the polymer from the reaction solution, a method such as re-precipitation can be mentioned.
이리 하여 얻어진 본 발명에 이용하는 고분지 폴리머의 중량평균 분자량(이하 Mw라고 약기)은, 겔침투 크로마토그래피(GPC)에 의한 폴리스티렌 환산으로, 바람직하게는 1,000~200,000, 더욱 바람직하게는 2,000~100,000, 가장 바람직하게는 2,000~30,000이다.The weight average molecular weight (hereinafter, abbreviated as Mw) of the highly branched polymer used in the present invention is preferably 1,000 to 200,000, more preferably 2,000 to 100,000, more preferably 1,000 to 1,000,000 in terms of polystyrene by gel permeation chromatography (GPC) And most preferably 2,000 to 30,000.
본 발명에 이용하는 고분지 폴리머 중, 특히 바람직한 것의 일례는, 적어도 상기 식[1] 그리고 식[2]로 표시되는 구조부분을 포함하는 중합쇄를 구성하는 중합물로 이루어진 고분지 폴리머로서,An example of the highly branched polymer used in the present invention is a highly branched polymer composed of a polymer constituting at least a polymer chain containing structural moieties represented by the above formulas [1] and [2]
식[1] 중,In the formula [1]
R1, R2, R5 및 R6은 수소원자를 나타내고,R 1 , R 2 , R 5 and R 6 represent a hydrogen atom,
R3, R4는 수소원자 또는 메틸기를 나타내고,R 3 and R 4 represent a hydrogen atom or a methyl group,
A1은 페닐렌기 또는 트리시클로[5.2.1.02,6]데칸-4,8-디일-디(메틸렌옥시카르보닐)기를 나타내고,A 1 represents a phenylene group or a tricyclo [5.2.1.0 2,6 ] decane-4,8-diyl-di (methyleneoxycarbonyl) group,
식[2] 중,In formula [2]
R7, R8 및 R9는 수소원자를 나타내고,R 7 , R 8 and R 9 represent a hydrogen atom,
R10 및 R11은, 각각 독립적으로 수소원자 또는 메틸기를 나타내거나, R10과 R11이 하나가 되어 n-프로필렌기를 나타내고,R 10 and R 11 each independently represent a hydrogen atom or a methyl group, or R 10 and R 11 are combined to form an n-propylene group,
이 중합쇄의 말단에 2,2'-아조비스(2-메틸부티로니트릴) 및 디메틸2,2'아조비스(2-메틸프로피오네이트)로부터 선택되는 중합개시제C의 라디칼개열단편이 탑재되어 이루어진, 고분지 폴리머를 들 수 있다. A radical cleavage fragment of a polymerization initiator C selected from 2,2'-azobis (2-methylbutyronitrile) and dimethyl 2,2 'azobis (2-methylpropionate) is loaded at the end of the polymerization chain Branched polymer obtained by polymerizing a polymerizable monomer.
<(b)금속 미립자>< (b) Metal fine particles >
본 발명의 하지제에 이용되는 (b)금속 미립자로는 특별히 한정되지 않고, 금속종으로는 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 파라듐(Pd), 은(Ag), 주석(Sn), 백금(Pt) 및 금(Au) 그리고 이들의 합금을 들 수 있고, 이들 금속의 1종류여도 되고 2종 이상의 합금이어도 상관없다. 그 중에서도 바람직한 금속 미립자로는 파라듐 미립자를 들 수 있다. 한편, 금속 미립자로서, 상기 금속의 산화물을 이용해도 된다.The metal fine particles (b) used in the undercoating of the present invention are not particularly limited and examples of the metal species include iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), palladium Silver (Ag), tin (Sn), platinum (Pt), gold (Au), and alloys thereof, and may be one kind of these metals or two or more kinds of alloys. Among them, preferable metal fine particles include palladium fine particles. On the other hand, as the metal fine particles, an oxide of the above metal may be used.
상기 금속 미립자는, 예를 들어 금속염의 용액을 고압수은등에 의해 광조사하는 방법이나, 이 용액에 환원작용을 갖는 화합물(소위 환원제)을 첨가하는 방법 등에 의해, 금속이온을 환원함으로써 얻어진다. 예를 들어, 상기 고분지 폴리머를 용해한 용액에 금속염의 용액을 첨가하여 이것에 자외선을 조사하거나, 혹은, 이 용액에 금속염의 용액 및 환원제를 첨가하는 등 하여, 금속이온을 환원함으로써, 고분지 폴리머와 금속 미립자의 복합체를 형성시키면서, 고분지 폴리머 및 금속 미립자를 포함하는 하지제를 조제할 수 있다.The metal fine particles can be obtained by, for example, a method of irradiating a solution of a metal salt with a high-pressure mercury lamp, or a method of adding a compound having a reducing action (so-called reducing agent) to the solution to reduce metal ions. For example, metal ions are reduced by adding a solution of a metal salt to a solution of the high branching polymer and irradiating the solution with ultraviolet rays, or adding a solution of a metal salt and a reducing agent to the solution, And a metal fine particle are formed on the surface of the substrate, a restraining agent containing a high branching polymer and fine metal particles can be prepared.
상기 금속염으로는, 염화금산, 질산은, 황산구리, 질산구리, 아세트산구리, 염화주석, 염화제일백금, 염화백금산, Pt(dba)2[dba=디벤질리덴아세톤], Pt(cod)2[cod=1,5-시클로옥타디엔], Pt(CH3)2(cod), 염화파라듐, 아세트산파라듐(Pd(OC(=O)CH3)2), 질산파라듐, Pd2(dba)3·CHCl3, Pd(dba)2, 염화로듐, 아세트산로듐, 염화루테늄, 아세트산루테늄, Ru(cod)(cot)[cot=시클로옥타트리엔], 염화이리듐, 아세트산이리듐, Ni(cod)2 등을 들 수 있다.(Dba) 2 [dba = dibenzylideneacetone], Pt (cod) 2 [cod = (dba)], 1, 5-cyclooctadiene], Pt (CH 3) 2 (cod), chloride, palladium acetate, palladium (Pd (OC (= O) CH 3) 2), nitrate, palladium, Pd 2 (dba) 3 · CHCl 3, Pd (dba) 2, chloride, rhodium acetate, rhodium chloride, ruthenium acetate, ruthenium, Ru (cod) (cot) [cot = cyclooctadiene triene], iridium chloride, acetic acid, iridium, Ni (cod) 2, etc. .
상기 환원제로는, 특별히 한정되는 것은 아니고, 다양한 환원제를 이용할 수 있고, 얻어지는 하지제에 함유시키는 금속종 등에 따라 환원제를 선택하는 것이 바람직하다. 이용할 수 있는 환원제로는, 예를 들어, 수소화붕소나트륨, 수소화붕소칼륨 등의 수소화붕소금속염; 수소화알루미늄리튬, 수소화알루미늄칼륨, 수소화알루미늄세슘, 수소화알루미늄베릴륨, 수소화알루미늄마그네슘, 수소화알루미늄칼슘 등의 수소화알루미늄염; 하이드라진 화합물; 구연산 및 그 염; 석신산 및 그 염; 아스코르브산 및 그 염; 메탄올, 에탄올, 이소프로판올, 폴리올 등의 제1급 또는 제2급 알코올류; 트리메틸아민, 트리에틸아민, 디이소프로필에틸아민, 디에틸메틸아민, 테트라메틸에틸렌디아민[TMEDA], 에틸렌디아민사아세트산[EDTA] 등의 제3급 아민류; 하이드록실아민; 트리-n-프로필포스핀, 트리-n-부틸포스핀, 트리시클로헥실포스핀, 트리벤질포스핀, 트리페닐포스핀, 트리에톡시포스핀, 1,2-비스(디페닐포스피노)에탄[DPPE], 1,3-비스(디페닐포스피노)프로판[DPPP], 1,1'-비스(디페닐포스피노)페로센[DPPF], 2,2'-비스(디페닐포스피노)-1,1'-비나프틸[BINAP] 등의 포스핀류 등을 들 수 있다.The reducing agent is not particularly limited, and various reducing agents can be used, and it is preferable to select a reducing agent depending on the metal species to be contained in the obtained base agent. Examples of the reducing agent that can be used include borohydride metal salts such as sodium borohydride and potassium borohydride; Aluminum hydrides such as lithium aluminum hydride, potassium aluminum hydride, cesium aluminum hydride, beryllium aluminum hydride, magnesium aluminum hydride, and calcium aluminum hydride; Hydrazine compounds; Citric acid and its salts; Succinic acid and its salts; Ascorbic acid and its salts; Primary or secondary alcohols such as methanol, ethanol, isopropanol and polyol; Tertiary amines such as trimethylamine, triethylamine, diisopropylethylamine, diethylmethylamine, tetramethylethylenediamine [TMEDA] and ethylenediamine acetic acid [EDTA]; Hydroxylamine; Triphenylphosphine, triphenylphosphine, triethoxyphosphine, 1,2-bis (diphenylphosphino) ethane, triphenylphosphine, tri-n-butylphosphine, tricyclohexylphosphine, (Diphenylphosphino) propane [DPPP], 1,1'-bis (diphenylphosphino) ferrocene [DPPF], and 2,2'-bis And phosphine such as 1,1'-binaphthyl [BINAP].
상기 금속 미립자의 평균입경은 1~100nm가 바람직하다. 이 금속 미립자의 평균입경을 100nm 이하로 함으로써, 표면적의 감소가 적어 충분한 촉매활성이 얻어진다. 평균입경으로는, 75nm 이하가 더욱 바람직하고, 1~30nm가 특히 바람직하다.The average particle diameter of the metal fine particles is preferably 1 to 100 nm. By setting the average particle size of the metal fine particles to 100 nm or less, the surface area is less decreased and sufficient catalytic activity is obtained. The average particle diameter is more preferably 75 nm or less, and particularly preferably 1 to 30 nm.
본 발명의 하지제에 있어서의 상기 (a)고분지 폴리머의 첨가량은, 상기 (b)금속 미립자 100질량부에 대하여 20질량부 이상 10,000질량부 이하로 하는 것이 바람직하다. (b)금속 미립자 100질량부에 대한 (a)고분지 폴리머의 첨가량을 20질량부 이상으로 함으로써, 상기 금속 미립자를 충분히 분산시킬 수 있고, 또한, 20질량부 이하이면, 상기 금속 미립자의 분산성이 불충분하여, 침전물이나 응집물을 발생시키기 쉬워진다. 보다 바람직하게는, 30질량부 이상이다. 또한, (b)금속 미립자 100질량부에 대하여 (a)고분지 폴리머를 10,000질량부 이상 첨가하면, 도포후의 단위면적당의 Pd량이 불충분해지므로, 도금의 석출성이 저하될 우려가 있다.The addition amount of the above-mentioned (a) high branched polymer in the undercoat of the present invention is preferably 20 parts by mass or more and 10,000 parts by mass or less based on 100 parts by mass of the metal fine particles (b). (a) the addition amount of the (a) high branch polymer relative to 100 parts by mass of the metal fine particles (b) is 20 parts by mass or more, the metal fine particles can be sufficiently dispersed, and if it is 20 parts by mass or less, Is insufficient, so that precipitates and agglomerates are liable to be generated. More preferably, it is at least 30 parts by mass. Further, when (a) 10,000 parts by mass or more of the (a) high branching polymer is added to 100 parts by mass of the metal fine particles (b), the amount of Pd per unit area after coating becomes insufficient.
<(c)아민 화합물>< (c) Amine compound >
본 발명의 무전해 도금 하지제에 이용되는 (c)아민 화합물로는, 공지의 것을 사용하는 것이 가능하며, 예를 들어, 알킬아민류, 하이드록시알킬아민류 등의 지방족 아민류, 환상 치환기를 갖는 아민류, 방향족 아민(아릴아민)류, 그리고 알콕시실릴기를 갖는 아민 화합물 등을 들 수 있다. 이들 아민 화합물 중에서도 알콕시실릴기를 갖는 아민 화합물이 바람직하다. 또한, 도금 하지제의 보존안정성을 향상시키는 점에서, 아민 화합물의 아미노기는 케톤류에 의해 보호(알킬리덴기에 의한 보호)되어 있는 것이 바람직하고, 본 발명에 있어서, 해당 아미노기가 알킬리덴기에 의해 보호된 아민 화합물도 (c)성분에 포함된다. 한편, (c)성분으로서 이 알킬리덴기에 의해 보호된 아민 화합물을 이용하는 경우, 후술하는 하지제의 용매로는, 상기 알킬리덴기에 의한 보호를 해제하게 되는 알코올용매가 아니고, 케톤류, 에테르류, 에스테르류의 용매를 이용하는 것이 바람직하다.As the amine compound (c) used in the electroless plating treatment agent of the present invention, known ones can be used, and examples thereof include aliphatic amines such as alkyl amines and hydroxyalkyl amines, amines having cyclic substituents, Aromatic amine (arylamine), and amine compound having an alkoxysilyl group. Among these amine compounds, amine compounds having an alkoxysilyl group are preferable. The amino group of the amine compound is preferably protected by a ketone (protected by an alkylidene group) from the viewpoint of improving the storage stability of the plating solution, and in the present invention, the amino group is protected by an alkylidene group Amine compounds are also included in component (c). On the other hand, when the amine compound protected by the alkylidene group as the component (c) is used, the base solvent to be described later is not an alcohol solvent which releases the protection by the alkylidene group, but includes ketones, It is preferable to use a solvent of the same type.
본 발명에서는, (c)아민 화합물을 무전해 도금 하지제에 배합함으로써, 금속 미립자, 상세하게는 후술하는 금속 미립자와 고분지 폴리머로 이루어진 복합체의 하지제 중의 분산안정성 향상의 효과가 얻어지고, 또한 미세한 도금패턴 형성에 기여한다. 한편, 알킬리덴기에 의해 보호된 아민 화합물은, 무전해 도금액에 의해 알킬리덴기의 보호가 해제되므로, (c)성분으로서 알킬리덴기에 의해 보호된 아민 화합물을 사용할 수 있다.In the present invention, by mixing the amine compound (c) with an electroless plating base agent, the effect of improving the dispersion stability in the base metal fine particles, specifically the base metal of the composite of the metal fine particles and the high branch polymer described later is obtained Contributes to formation of a fine plating pattern. On the other hand, an amine compound protected by an alkylidene group can be used as an amine compound protected by an alkylidene group as a component (c) since the protection of the alkylidene group is released by an electroless plating solution.
상기 알킬아민류로는, 에틸아민(CH3CH2NH2), 프로필아민(CH3(CH2)2NH2), 부틸아민(CH3(CH2)3NH2), 펜틸아민(CH3(CH2)4NH2), 헥실아민(CH3(CH2)5NH2), 헵틸아민(CH3(CH2)6NH2), 옥틸아민(CH3(CH2)7NH2), 노닐아민(CH3(CH2)8NH2), 데실아민(CH3(CH2)9NH2), 운데실아민(CH3(CH2)10NH2), 도데실아민(CH3(CH2)11NH2), 트리데실아민(CH3(CH2)12NH2), 테트라데실아민(CH3(CH2)13NH2), 펜타데실아민(CH3(CH2)14NH2), 헥사데실아민(CH3(CH2)15NH2), 헵타데실아민(CH3(CH2)16NH2), 옥타데실아민(CH3(CH2)17NH2), 노나데실아민(CH3(CH2)18NH2), 이코실아민(CH3(CH2)19NH2), 및 이들의 구조이성체 등의 제1급 아민류; N,N-디메틸아민, N,N-디에틸아민, N,N-디프로필아민, N,N-디부틸아민 등의 제2급 아민류; 트리메틸아민, 트리에틸아민, 트리프로필아민, 트리부틸아민 등의 제3급 아민류를 들 수 있다.In the alkyl amines, amine (CH 3 CH 2 NH 2), propylamine (CH 3 (CH 2) 2 NH 2), tributylamine (CH 3 (CH 2) 3 NH 2), pentylamine (CH 3 (CH 2) 4 NH 2) , hexylamine (CH 3 (CH 2) 5 NH 2), heptylamine (CH 3 (CH 2) 6 NH 2), octylamine (CH 3 (CH 2) 7 NH 2) , nonyl amine (CH 3 (CH 2) 8 NH 2), decylamine (CH 3 (CH 2) 9 NH 2), undecyl amine (CH 3 (CH 2) 10 NH 2), dodecylamine (CH 3 (CH 2) 11 NH 2) , tridecyl amine (CH 3 (CH 2) 12 NH 2), tetradecyl amine (CH 3 (CH 2) 13 NH 2), pentadecyl amine (CH 3 (CH 2) 14 NH 2), hexadecyl amine (CH 3 (CH 2) 15 NH 2), heptadecyl amine (CH 3 (CH 2) 16 NH 2), octadecylamine (CH 3 (CH 2) 17 NH 2), na decylamine (CH 3 (CH 2) 18 NH 2), a primary amine such as Ikoma chamber amine (CH 3 (CH 2) 19 NH 2), and structural isomers thereof; Secondary amines such as N, N-dimethylamine, N, N-diethylamine, N, N-dipropylamine and N, N-dibutylamine; And tertiary amines such as trimethylamine, triethylamine, tripropylamine and tributylamine.
상기 하이드록시알킬아민류(알칸올아민류)로는, 메탄올아민(OHCH2NH2), 에탄올아민(OH(CH2)2NH2), 프로판올아민(OH(CH2)3NH2), 부탄올아민(OH(CH2)4NH2), 펜탄올아민(OH(CH2)5NH2), 헥산올아민(OH(CH2)6NH2), 헵탄올아민(OH(CH2)7NH2), 옥탄올아민(OH(CH2)8NH2), 노난올아민(OH(CH2)9NH2), 데칸올아민(OH(CH2)10NH2), 운데칸올아민(OH(CH2)11NH2), 도데칸올아민(OH(CH2)12NH2), 트리데칸올아민(OH(CH2)13NH2), 테트라데칸올아민(OH(CH2)14NH2), 펜타데칸올아민(OH(CH2)15NH2), 헥사데칸올아민(OH(CH2)16NH2), 헵타데칸올아민(OH(CH2)17NH2), 옥타데칸올아민(OH(CH2)18NH2), 노나데칸올아민(OH(CH2)19NH2), 에이코사데칸올아민(OH(CH2)20NH2) 등의 제1급 아민류; N-메틸메탄올아민, N-에틸메탄올아민, N-프로필메탄올아민, N-부틸메탄올아민, N-메틸에탄올아민, N-에틸에탄올아민, N-프로필에탄올아민, N-부틸에탄올아민, N-메틸프로판올아민, N-에틸프로판올아민, N-프로필프로판올아민, N-부틸프로판올아민, N-메틸부탄올아민, N-에틸부탄올아민, N-프로필부탄올아민, N-부틸부탄올아민 등의 제2급 아민류 등을 들 수 있다.Examples of the hydroxyalkylamines (alkanolamines) include methanol amine (OHCH 2 NH 2 ), ethanolamine (OH (CH 2 ) 2 NH 2 ), propanolamine (OH (CH 2 ) 3 NH 2 ), butanolamine OH (CH 2) 4 NH 2 ), pentanol amine (OH (CH 2) 5 NH 2), hexanol amine (OH (CH 2) 6 NH 2), heptanol amine (OH (CH 2) 7 NH 2 ) octanol amine (OH (CH 2) 8 NH 2), nonanol amine (OH (CH 2) 9 NH 2), decanol amine (OH (CH 2) 10 NH 2), undecanoic kanol amine (OH ( CH 2) 11 NH 2), dodecanol amine (OH (CH 2) 12 NH 2), tridecanoic olamine (OH (CH 2) 13 NH 2), tetradecane olamine (OH (CH 2) 14 NH 2 ), pentadecane olamine (OH (CH 2) 15 NH 2), hexadecane olamine (OH (CH 2) 16 NH 2), heptanoic decanol amine (OH (CH 2) 17 NH 2), octadecanol Primary amines such as amine (OH (CH 2 ) 18 NH 2 ), nonadecanolamine (OH (CH 2 ) 19 NH 2 ) and eicosadecanolamine (OH (CH 2 ) 20 NH 2 ); N-methylmethanolamine, N-ethylmethanolamine, N-propylmethanolamine, N-butylmethanolamine, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, Such as N-methylpropanolamine, N-ethylpropanolamine, N-propylpropanolamine, N-butylpropanolamine, N-methylbutanolamine, N-ethylbutanolamine, N-propylbutanolamine, Amines and the like.
또한 기타 지방족 아민류로는, 메톡시메틸아민, 메톡시에틸아민, 메톡시프로필아민, 메톡시부틸아민, 에톡시메틸아민, 에톡시에틸아민, 에톡시프로필아민, 에톡시부틸아민, 프로폭시메틸아민, 프로폭시에틸아민, 프로폭시프로필아민, 프로폭시부틸아민, 부톡시메틸아민, 부톡시에틸아민, 부톡시프로필아민, 부톡시부틸아민 등의 알콕시알킬아민을 들 수 있다.Examples of other aliphatic amines include aliphatic amines such as methoxymethylamine, methoxyethylamine, methoxypropylamine, methoxybutylamine, ethoxymethylamine, ethoxyethylamine, ethoxypropylamine, ethoxybutylamine, propoxymethyl And alkoxyalkylamines such as amine, propoxyethylamine, propoxypropylamine, propoxybutylamine, butoxymethylamine, butoxyethylamine, butoxypropylamine, and butoxybutylamine.
환상 치환기를 갖는 아민류의 예로는, 식R17-R18-NH2로 표시되는 아민 화합물이 바람직하다.As examples of the amines having a cyclic substituent, an amine compound represented by the formula R 17 -R 18 -NH 2 is preferable.
상기 식 중, R17은 탄소원자수 3 내지 12, 바람직하게는 탄소원자수 3 내지 10의 1가의 환상기이며, 지환식기, 방향족기, 그리고 이들의 조합의 어느 것이어도 된다. 이들의 환상기는 임의의 치환기, 예를 들어 탄소원자 1 내지 10의 알킬기 등으로 치환되어 있어도 된다. R18은 단결합 또는 탄소원자수 1 내지 17, 바람직하게는 탄소원자수 1 내지 3의 알킬렌기를 나타낸다.In the formula, R 17 is a monovalent cyclic group having 3 to 12 carbon atoms, preferably 3 to 10 carbon atoms, and may be an alicyclic group, an aromatic group, or a combination thereof. These cyclic groups may be substituted with any substituent, for example, an alkyl group having 1 to 10 carbon atoms or the like. R 18 represents a single bond or an alkylene group having 1 to 17 carbon atoms, preferably 1 to 3 carbon atoms.
본 발명에 있어서, 식R11-R12-NH2로 표시되는 아민 화합물의 바람직한 구체예로는, 하기의 식(A-1) 내지 (A-10)으로 표시되는 화합물 등을 들 수 있다.In the present invention, preferred specific examples of the amine compound represented by the formula R 11 -R 12 -NH 2 include compounds represented by the following formulas (A-1) to (A-10).
[화학식 3](3)
방향족 아민류(아릴아민류)의 구체예로서, 아닐린, N-메틸아닐린, o-, m-, 또는 p-아니시딘, o-, m-, 또는 p-톨루이딘, o-, m-, 또는 p-클로로아닐린, o-, m-, 또는 p-브로모아닐린, o-, m-, 또는 p-요오드아닐린 등을 들 수 있다.Specific examples of the aromatic amines (aryl amines) include aniline, N-methylaniline, o-, m-, or p-anisidine, o-, m-, or p-toluidine, o-, m-, Chloroaniline, o-, m-, or p-bromoaniline, o-, m-, or p-iodoaniline.
알콕시실릴기를 갖는 아민 화합물의 구체예로는 N,N'-비스[3-(트리메톡시실릴)프로필]-1,2-에탄디아민, N,N'-비스[3-(트리에톡시실릴)프로필]-1,2-에탄디아민, N-[3-(트리메톡시실릴)프로필]-1,2-에탄디아민, N-[3-(트리에톡시실릴)프로필]-1,2-에탄디아민, 비스-[3-(트리메톡시실릴)프로필]아민, 비스-[3-(트리에톡시실릴)프로필]아민, 3-아미노프로필트리메톡시실란, 3-아미노프로필트리에톡시실란, 3-아미노프로필메틸디메톡시실란, 3-아미노프로필메틸디에톡시실란, 트리메톡시[3-(메틸아미노)]프로필실란, 3-(N-알릴아미노)프로필트리메톡시실란, 3-(N-알릴아미노)프로필트리에톡시실란, 3-(디에틸아미노)프로필트리메톡시실란, 3-(디에틸아미노)프로필트리에톡시실란, 3-(페닐아미노)프로필트리메톡시실란, 3-(페닐아미노)프로필트리에톡시실란 등의 화합물을 들 수 있다.Specific examples of the amine compound having an alkoxysilyl group include N, N'-bis [3- (trimethoxysilyl) propyl] -1,2-ethanediamine, N, N'-bis [3- (triethoxysilyl ) Propyl] -1,2-ethanediamine, N- [3- (trimethoxysilyl) propyl] -1,2-ethanediamine, N- [3- (triethoxysilyl) Aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, bis- [3- (trimethoxysilyl) (3-aminopropylmethyldimethoxysilane, 3-aminopropylmethyldiethoxysilane, trimethoxy [3- (methylamino)] propylsilane, 3- 3- (diethylamino) propyltriethoxysilane, 3- (phenylamino) propyltrimethoxysilane, 3 (diethylamino) propyltrimethoxysilane, 3- - (phenylamino) propyltriethoxysilane, and the like. The.
또한 상기에 구체예를 든 알킬아민류, 하이드록시알킬아민류, 기타 지방족 아민류, 환상 치환기를 갖는 아민류, 방향족 아민(아릴아민)류, 알콕시실릴기를 갖는 아민 화합물에 있어서, 아미노기가, 예를 들어 메틸에틸케톤이나 메틸이소부틸케톤 등의 케톤류에 의해, 알킬리덴기 보호된 아미노 화합물을 들 수 있다.In the amine compounds having an alkylamine, hydroxyalkylamine, other aliphatic amines, cyclic substituents, aromatic amines (arylamines), or alkoxysilyl groups, which are specifically exemplified above, And an amino compound protected with an alkylidene group by a ketone such as ketone or methyl isobutyl ketone.
본 발명의 하지제에 있어서의 (c)아민 화합물의 함유량은, 후술하는 상기 고분지 폴리머와 금속 미립자로부터 형성된 복합체(또는 상기 고분지 폴리머와 금속 미립자의 합계질량) 100질량부에 대하여 0.01질량부~500질량부인 것이 바람직하고, 보다 바람직하게는 0.1질량부~300질량부이며, 특히 1질량부~100질량부이다.The content of the amine compound (c) in the undercoat of the present invention is preferably 0.01 part by mass or less per 100 parts by mass of the complex (or the total mass of the high branch polymer and the metal fine particles) formed from the above- To 500 parts by mass, more preferably 0.1 part by mass to 300 parts by mass, and particularly 1 part by mass to 100 parts by mass.
(c)아민 화합물의 함유량이 상기 수치범위보다 과소인 경우, 후술하는 상기 고분지 폴리머와 금속 미립자로부터 형성된 복합체의 분산성·용해성 안정화 효과가 얻어지지 않고, 또한 상기 범위를 크게 초과하여 첨가한 경우(예를 들어 상기 복합체의 10질량배량 등), 도금욕을 오염하거나, 파괴하는 경우가 있을 뿐만 아니라, 도금피막에 외관 불량을 일으키는 경우가 있다.When the content of the amine compound (c) is less than the above-mentioned range, the effect of stabilizing the dispersibility and solubility of the composite formed from the above-mentioned highly branched polymer and the metal fine particles can not be obtained. (For example, a 10-fold amount of the composite, etc.), the plating bath may be contaminated or destroyed, and the plating film may be defective in appearance.
<하지제><Forbid>
본 발명의 무전해 도금 하지제는, 상기 (a)고분지 폴리머 및 (b)금속 미립자를 포함하는 것이며, 추가로, 필요에 따라 (c)아민 화합물, 더 나아가 기타 성분을 포함하는 것이다. 본 발명의 무전해 도금 하지제에 있어서, 상기 고분지 폴리머와 상기 금속 미립자가 복합체를 형성하고 있는 것이 바람직하고, 즉 상기 하지제가 상기 고분지 폴리머와 상기 금속 미립자에 의해 형성된 복합체를 포함하는 것이 바람직하다.The electroless plating pretreatment agent of the present invention comprises the above (a) high branched polymer and (b) fine metal particles, and further contains (c) an amine compound and further other components as necessary. In the electroless plating subsystem of the present invention, it is preferable that the above-mentioned highly branched polymer and the above-mentioned metal fine particles form a complex, that is, the above-mentioned base metal includes a composite formed by the above- Do.
여기서 복합체란, 상기 고분지 폴리머의 측쇄의 아미드기의 작용에 의해, 금속 미립자에 접촉 또는 근접한 상태로 양자가 공존하고, 입자상의 형태를 이루는 것이며, 환언하면, 상기 고분지 폴리머의 아미드기에 금속 미립자가 부착 또는 배위한 구조를 갖는 복합체라고 표현된다.The term "complex" as used herein means that the amide group of the high branching polymer forms a particulate form in coexistence with or in contact with the metal fine particles by the action of the amide group of the side chain of the high branching polymer. In other words, Is referred to as a composite having a structure for attaching or draining.
여기서 “부착 또는 배위한 구조”란, 고분지 폴리머의 아미드기의 일부 또는 전부가 금속 미립자와 상호작용한 상태를 말한다. 예를 들어 금속원자로서 파라듐염을 채용한 경우, 아미드기와 파라듐염이 이하의 (a) 또는 (b)에 나타낸 구조(식 중의 L은 배위자이다.)를 형성하고 있는 것으로 여겨진다. 이에 따라, 금속 미립자로서 파라듐 미립자를 채용한 경우, 표층의 Pd원자가 아미드기와 상호작용함으로써, 고분지 폴리머가 금속 미립자를 둘러싸는 구조를 형성하고 있는 것으로 여겨진다.Here, the "structure for attaching or draining" refers to a state in which a part or all of the amide group of the high branching polymer interacts with the metal fine particles. For example, when a palladium salt is employed as a metal atom, it is considered that the amide group and the palladium salt form the structure shown in the following (a) or (b) (L in the formula is a ligand). Accordingly, in the case where the fine particles of palladium are employed as the metal fine particles, it is considered that the Pd atoms in the surface layer interact with the amide groups, thereby forming a structure in which the highly branched polymer surrounds the metal fine particles.
[화학식 4][Chemical Formula 4]
따라서, 본 발명에 있어서의 「복합체」에는, 상술한 바와 같이 금속 미립자와 고분지 폴리머가 결합하여 하나의 복합체를 형성하고 있는 것뿐만 아니라, 금속 미립자와 고분지 폴리머가 결합부분을 형성하지 않고, 각각 독립적으로 존재하고 있는 것(외관상, 1개의 입자를 형성하고 있는 것처럼 보이는 것)도 포함되어 있어도 된다.Therefore, in the " composite " in the present invention, not only the metal fine particles and the high branching polymer are combined to form a single composite, but also the metal fine particles and the high branching polymer do not form bonding portions, And may be independently present (apparently, one appearing to form one particle).
본 발명의 (a)고분지 폴리머의 중합쇄에 포함되는 식[1], 식[2] 및 식[3]으로 표시되는 구조부분은, 모두 Pd원자를 환원하는 활성프로톤, 혹은 Pd원자와 가교하는 부위를 가지지 않으므로, 본 발명의 (a)고분지 폴리머는 아미드기에 의해 (b)금속 미립자와 안정적으로 복합체를 형성할 수 있다.The structural moieties represented by the formulas [1], [2] and [3] included in the polymer chain of the (a) high-molecular-weight polymer of the present invention are all active protons for reducing Pd atoms, The (a) high branching polymer of the present invention can stably form a complex with (b) the metal fine particles by the amide group.
상기 (a)고분지 폴리머와 (b)금속 미립자의 복합체의 형성은, 고분지 폴리머와 금속 미립자를 포함하는 하지제의 조제시에 동시에 실시되고, 그 방법으로는, 저급 암모늄배위자에 의해 어느 정도 안정화된 금속 미립자를 합성한 후에 고분지 폴리머에 의해 배위자를 교환하는 방법이나, 고분지 폴리머의 용액 중에서, 금속이온을 직접 환원함으로써 복합체를 형성하는 방법이 있다. 또한, 상술한 바와 같이, 상기 고분지 폴리머를 용해한 용액에 금속염의 용액을 첨가하여 이것에 자외선을 조사하거나, 혹은, 이 용액에 금속염의 용액 및 환원제를 첨가하는 등 하여, 금속이온을 환원함으로써도 복합체를 형성할 수 있다.The formation of the composite of the above-mentioned (a) high-branched polymer and (b) metal fine particles is carried out at the same time when preparing a restraining agent comprising a high branching polymer and fine metal particles, There is a method of exchanging a ligand by a highly branched polymer after synthesizing stabilized metal fine particles or a method of forming a complex by directly reducing metal ions in a solution of a high branched polymer. As described above, by reducing the metal ion by adding a solution of a metal salt to a solution obtained by dissolving the above-mentioned branched polymer and irradiating it with ultraviolet rays, or by adding a solution of a metal salt and a reducing agent to this solution Complex can be formed.
배위자 교환법에 있어서, 원료가 되는 저급 암모늄배위자에 의해 어느 정도 안정화된 금속 미립자는, Jounal of Organometallic Chemistry 1996, 520, 143-162 등에 기재된 방법으로 합성할 수 있다. 얻어진 금속 미립자의 반응혼합용액에, 상기 고분지 폴리머를 용해하고, 실온(대략 25℃) 또는 가열교반함으로써 목적으로 하는 금속 미립자 복합체를 얻을 수 있다.In the ligand exchange method, the metal fine particles stabilized to a certain degree by the lower ammonium ligand to be a raw material can be synthesized by a method described in Jounal of Organometallic Chemistry 1996, 520, 143-162 and the like. The aimed metal fine particle complex can be obtained by dissolving the above-mentioned highly branched polymer in the reaction mixture solution of the obtained metal fine particles and then stirring at room temperature (about 25 캜) or heating.
사용하는 용매로는, 금속 미립자와 고분지 폴리머를 필요농도 이상으로 용해할 수 있는 용매이면 특별히 한정되지는 않으나, 구체적으로는, 에탄올, n-프로판올, 2-프로판올 등의 알코올류; 염화메틸렌, 클로로포름 등의 할로겐화탄화수소류; 테트라하이드로푸란(THF), 2-메틸테트라하이드로푸란, 테트라하이드로피란 등의 환상 에테르류; 아세토니트릴, 부티로니트릴 등의 니트릴류 등 및 이들 용매의 혼합액을 들 수 있고, 바람직하게는, 테트라하이드로푸란을 들 수 있다.The solvent to be used is not particularly limited as long as it is a solvent capable of dissolving the metal fine particles and the high branching polymer in a required concentration or more, and specific examples thereof include alcohols such as ethanol, n-propanol and 2-propanol; Halogenated hydrocarbons such as methylene chloride and chloroform; Cyclic ethers such as tetrahydrofuran (THF), 2-methyltetrahydrofuran and tetrahydropyran; Nitriles such as acetonitrile, butyronitrile and the like, and mixtures of these solvents, preferably tetrahydrofuran.
금속 미립자의 반응혼합액과, 고분지 폴리머를 혼합하는 온도는, 통상 0℃ 내지 용매의 비점의 범위를 사용할 수 있고, 바람직하게는, 실온(대략 25℃) 내지 60℃의 범위이다.The temperature for mixing the reaction mixture of fine metal particles and the high branching polymer is usually from 0 占 폚 to the boiling point of the solvent, preferably from room temperature (approximately 25 占 폚) to 60 占 폚.
한편, 배위자 교환법에 있어서, 아민계 분산제(저급 암모늄배위자) 이외에 포스핀계 분산제(포스핀배위자)를 이용함으로써도, 미리 금속 미립자를 어느 정도 안정화할 수 있다.On the other hand, in the ligand exchange method, metal fine particles can be stabilized to some extent in advance even by using a phosphine-based dispersing agent (phosphine ligand) in addition to an amine-based dispersing agent (a lower ammonium ligand).
직접환원방법으로는, 금속이온과 고분지 폴리머를 용매에 용해하고, 메탄올, 에탄올, 2-프로판올, 폴리올 등의 제1급 또는 제2급 알코올류로 환원시킴으로써, 목적으로 하는 금속 미립자 복합체를 얻을 수 있다.As a direct reduction method, a desired metal fine particle complex is obtained by dissolving a metal ion and a higher branching polymer in a solvent and reducing the solution to a primary or secondary alcohol such as methanol, ethanol, 2-propanol, or a polyol .
여기서 이용되는 금속이온원으로는, 상술의 금속염을 사용할 수 있다.As the metal ion source used herein, the above-mentioned metal salt can be used.
사용하는 용매로는, 금속이온과 아미드기를 갖는 고분지 폴리머를 필요농도 이상으로 용해할 수 있는 용매이면 특별히 한정되지는 않으나, 구체적으로는, 메탄올, 에탄올, n-프로판올, 2-프로판올 등의 알코올류; 염화메틸렌, 클로로포름 등의 할로겐화탄화수소류; 테트라하이드로푸란(THF), 2-메틸테트라하이드로푸란, 테트라하이드로피란 등의 환상 에테르류; 아세토니트릴, 부티로니트릴 등의 니트릴류; N,N-디메틸포름아미드(DMF), N-메틸-2-피롤리돈(NMP) 등의 아미드류; 디메틸설폭사이드 등의 설폭사이드류 등 및 이들 용매의 혼합액을 들 수 있고, 바람직하게는, 알코올류, 할로겐화탄화수소류, 환상 에테르류를 들 수 있고, 보다 바람직하게는, 에탄올, 2-프로판올, 클로로포름, 테트라하이드로푸란 등을 들 수 있다.The solvent to be used is not particularly limited as long as it is a solvent capable of dissolving a high branching polymer having a metal ion and an amide group in a required concentration or more. Specific examples thereof include alcohols such as methanol, ethanol, n-propanol, Ryu; Halogenated hydrocarbons such as methylene chloride and chloroform; Cyclic ethers such as tetrahydrofuran (THF), 2-methyltetrahydrofuran and tetrahydropyran; Nitriles such as acetonitrile and butyronitrile; Amides such as N, N-dimethylformamide (DMF) and N-methyl-2-pyrrolidone (NMP); Sulfoxides such as dimethyl sulfoxide and the like, and mixtures of these solvents. Preferred examples of the solvent include alcohols, halogenated hydrocarbons and cyclic ethers. More preferred are ethanol, 2-propanol, chloroform , Tetrahydrofuran, and the like.
환원반응(금속이온과 고분지 폴리머를 혼합함)의 온도는, 통상 0℃ 내지 용매의 비점의 범위를 할 수 있고, 바람직하게는 실온(대략 25℃) 내지 60℃의 범위이다.The temperature of the reduction reaction (mixing the metal ion with the high branching polymer) may be in the range of usually 0 占 폚 to the boiling point of the solvent, preferably in the range of room temperature (approximately 25 占 폚) to 60 占 폚.
다른 직접환원방법으로는, 금속이온과 고분지 폴리머를 용매에 용해하고, 수소가스분위기하에서 반응시킴으로써, 목적으로 하는 금속 미립자 복합체를 얻을 수 있다.In another direct reduction method, a desired metal fine particle complex can be obtained by dissolving a metal ion and a higher branching polymer in a solvent and reacting in a hydrogen gas atmosphere.
여기서 이용되는 금속이온원으로는, 상술의 금속염이나, 헥사카르보닐크롬[Cr(CO)6], 펜타카르보닐철[Fe(Co)5], 옥타카르보닐디코발트[Co2(CO)8], 테트라카르보닐니켈[Ni(CO)4] 등의 금속카르보닐착체를 사용할 수 있다. 또한 금속올레핀착체나 금속포스핀착체, 금속질소착체 등의 0가의 금속착체도 사용할 수 있다.The above-mentioned metal salt and has a metal ion source used here, hexacarbonyl chromium [Cr (CO) 6], penta carbonyl nilcheol [Fe (Co) 5], octa-carbonyldiimidazole cobalt [Co 2 (CO) 8 ], Tetracarbonyl nickel [Ni (CO) 4 ], and the like can be used. Oval metal complexes such as metal olefin complexes, metal phosphine complexes, and metal nitrogen complexes can also be used.
사용하는 용매로는, 금속이온 고분지 폴리머를 필요농도 이상으로 용해할 수 있는 용매이면 특별히 한정되지는 않으나, 구체적으로는, 에탄올, 프로판올 등의 알코올류; 염화메틸렌, 클로로포름 등의 할로겐화탄화수소류; 테트라하이드로푸란, 2-메틸테트라하이드로푸란, 테트라하이드로피란 등의 환상 에테르류; 아세토니트릴, 부티로니트릴 등의 니트릴류 등 및 이들 용매의 혼합액을 들 수 있고, 바람직하게는 테트라하이드로푸란을 들 수 있다.The solvent to be used is not particularly limited as long as it is a solvent capable of dissolving the metal ion-modified polymer at a required concentration or higher, and specific examples thereof include alcohols such as ethanol and propanol; Halogenated hydrocarbons such as methylene chloride and chloroform; Cyclic ethers such as tetrahydrofuran, 2-methyltetrahydrofuran and tetrahydropyran; Nitriles such as acetonitrile, butyronitrile and the like, and mixtures of these solvents, preferably tetrahydrofuran.
금속이온과 고분지 폴리머를 혼합하는 온도는, 통상 0℃ 내지 용매의 비점의 범위를 사용할 수 있다.The temperature at which the metal ion and the high branching polymer are mixed is usually in the range of 0 占 폚 to the boiling point of the solvent.
또한, 직접환원방법으로서, 금속이온과 고분지 폴리머를 용매에 용해하고, 열분해반응시킴으로써, 목적으로 하는 금속 미립자 복합체를 얻을 수 있다.In addition, as a direct reduction method, metal ions and a high branching polymer are dissolved in a solvent and subjected to a thermal decomposition reaction to obtain a target metal fine particle complex.
여기서 이용되는 금속이온원으로는, 상술의 금속염이나 금속카르보닐착체나 기타 0가의 금속착체, 산화은 등의 금속산화물을 사용할 수 있다.As the metal ion source to be used here, the above-mentioned metal salt, metal carbonyl complex or other metal complex such as 0 metal, metal oxide such as silver oxide can be used.
사용하는 용매로는, 금속이온과 고분지 폴리머를 필요농도 이상으로 용해할 수 있는 용매이면 특별히 한정되지는 않으나, 구체적으로는, 메탄올, 에탄올, n-프로판올, 이소프로판올, 에틸렌글리콜 등의 알코올류; 염화메틸렌, 클로로포름 등의 할로겐화탄화수소류; 테트라하이드로푸란(THF), 2-메틸테트라하이드로푸란, 테트라하이드로피란 등의 환상 에테르류; 아세토니트릴, 부티로니트릴 등의 니트릴류; 벤젠, 톨루엔 등의 방향족 탄화수소류 등 및 이들 용매의 혼합액을 들 수 있고, 바람직하게는 톨루엔을 들 수 있다.The solvent to be used is not particularly limited as long as it is a solvent capable of dissolving a metal ion and a higher branching polymer in a required concentration or more. Specific examples thereof include alcohols such as methanol, ethanol, n-propanol, isopropanol and ethylene glycol; Halogenated hydrocarbons such as methylene chloride and chloroform; Cyclic ethers such as tetrahydrofuran (THF), 2-methyltetrahydrofuran and tetrahydropyran; Nitriles such as acetonitrile and butyronitrile; Aromatic hydrocarbons such as benzene and toluene, and mixtures of these solvents. Toluene is preferably used.
금속이온과 아미드기를 갖는 고분지 폴리머를 혼합하는 온도는, 통상 0℃ 내지 용매의 비점의 범위를 사용할 수 있고, 바람직하게는 용매의 비점 근방, 예를 들어 톨루엔의 경우는 110℃(가열환류)이다.The temperature at which the metal ion and the amide group-containing high branching polymer are mixed can be usually from 0 占 폚 to the boiling point of the solvent, preferably from near the boiling point of the solvent, for example, at 110 占 폚 (refluxing in the case of toluene) to be.
이리 하여 얻어지는 고분지 폴리머와 금속 미립자의 복합체는, 재침전 등의 정제처리를 거쳐, 분말 등의 고형물의 형태로 할 수 있다.The composite of the high branching polymer and the metal fine particles thus obtained can be subjected to a purification treatment such as reprecipitation to be in the form of solid such as powder.
본 발명의 하지제는, 상기 (a)고분지 폴리머와 (b)금속 미립자(바람직하게는 이들로 이루어진 복합체)를 포함하고, 나아가, 필요에 따라 (c)아민 화합물 및 기타 성분을 포함하는 것으로서, 이 하지제는, 후술하는 [무전해 금속 도금의 하지층]의 형성시에 이용하는 바니시의 형태일 수도 있다.The antiperspirant of the present invention comprises (c) an amine compound and other components as required, including (a) a high branching polymer and (b) fine metal particles (preferably a composite thereof) , And this abrasive may be in the form of a varnish to be used in forming the below-described [base layer of electroless metal plating].
<기타 첨가제><Other additives>
본 발명의 하지제는, 본 발명의 효과를 손상시키지 않는 한, 추가로 계면활성제, 각종 표면조정제, 증점제 등의 첨가제 등을 적당히 첨가해도 된다.As long as the effect of the present invention is not impaired, the anticorrosion agent of the present invention may further contain additives such as surfactants, various surface modifiers, and thickening agents.
상기 계면활성제로는, 예를 들어, 폴리옥시에틸렌라우릴에테르, 폴리옥시에틸렌스테아릴에테르, 폴리옥시에틸렌세틸에테르, 폴리옥시에틸렌올레일에테르 등의 폴리옥시에틸렌알킬에테르류; 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌노닐페닐에테르 등의 폴리옥시에틸렌알킬아릴에테르류; 폴리옥시에틸렌·폴리옥시프로필렌블록코폴리머류; 솔비탄모노라우레이트, 솔비탄모노팔미테이트, 솔비탄모노스테아레이트, 솔비탄모노올레이트, 솔비탄트리스테아레이트, 솔비탄트리올레이트 등의 솔비탄지방산에스테르류; 폴리옥시에틸렌솔비탄모노라우레이트, 폴리옥시에틸렌솔비탄모노팔미테이트, 폴리옥시에틸렌솔비탄모노스테아레이트, 폴리옥시에틸렌솔비탄트리올레이트 등의 폴리옥시에틸렌비이온계 계면활성제; 에프톱(등록상표) EF-301, 동(同) EF-303, 동 EF-352[이상, 미쯔비시마테리얼전자화성(주)제], 메가팍(등록상표) F-171, 동 F-173, 동 R-08, 동 R-30[이상, DIC(주)제], Novec(등록상표) FC-430, 동 FC-431[이상, 스미토모쓰리엠(주)제], 아사히가드(등록상표) AG-710[아사히글래스(주)제], 서프론(등록상표) S-382[AGC세이미케미칼(주)제] 등의 불소계 계면활성제 등을 들 수 있다.Examples of the surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether; Polyoxyethylene alkyl aryl ethers such as polyoxyethylene octyl phenyl ether and polyoxyethylene nonyl phenyl ether; Polyoxyethylene / polyoxypropylene block copolymers; Sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan tristearate, and sorbitan trioleate; Polyoxyethylene nonionic surfactants such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, and polyoxyethylene sorbitan trioleate; EF-303, EF-352 (manufactured by Mitsubishi Material Electronics Co., Ltd.), Megafac (registered trademark) F-171, and F-173 , Novec (registered trademark) FC-430, FC-431 (manufactured by Sumitomo 3M Ltd.), Asahi Guard (registered trademark) And fluorine surfactants such as AG-710 (manufactured by Asahi Glass Co., Ltd.) and Surflon (registered trademark) S-382 [manufactured by AGC Seiyam Chemical Co., Ltd.].
또한, 상기 표면조정제로는, 신에쯔실리콘(등록상표) KP-341[신에쯔화학공업(주)제] 등의 실리콘계 레벨링제; BYK(등록상표)-302, 동 307, 동 322, 동 323, 동 330, 동 333, 동 370, 동 375, 동 378[이상, 빅케미·재팬(주)제] 등의 실리콘계 표면조정제 등을 들 수 있다.Examples of the surface conditioner include silicone leveling agents such as Shinetsu Silicone KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.); Based surface control agents such as BYK (registered trademark) -302, 307, 322, 323, 330, 333, 375, 375 and 378 (manufactured by Big Chem Japan) .
상기 증점제로는, 예를 들어, 카르복시비닐폴리머(카보머) 등의 폴리아크릴산류(가교한 것도 포함함); 폴리비닐피롤리돈(PVP), 폴리비닐알코올(PVA), 폴리아세트산비닐(PVAc), 폴리스티렌(PS) 등의 비닐폴리머; 폴리에틸렌옥사이드류; 폴리에스테르; 폴리카보네이트; 폴리아미드; 폴리우레탄; 덱스트린, 한천, 카라기난, 알긴산, 아라비아검, 구아검, 트라간트검, 로커스트빈검, 전분, 펙틴, 카르복시메틸셀룰로오스, 하이드록시에틸셀룰로오스, 하이드록시프로필셀룰로오스 등의 다당류; 젤라틴, 카제인 등의 단백질 등을 들 수 있다. 또한, 상기 각 폴리머에는, 호모폴리머뿐만 아니라 코폴리머도 포함된다. 이들 증점제는 1종을 단독으로 사용해도 되고, 또한 2종 이상을 병용해도 된다.Examples of the thickening agent include polyacrylic acids (including crosslinked ones) such as carboxyvinyl polymer (carbomer); Vinyl polymers such as polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polyvinyl acetate (PVAc), and polystyrene (PS); Polyethylene oxides; Polyester; Polycarbonate; Polyamide; Polyurethane; Polysaccharides such as dextrin, agar, carrageenan, alginic acid, gum arabic, guar gum, tragacanth gum, locust gum gum, starch, pectin, carboxymethyl cellulose, hydroxyethyl cellulose and hydroxypropyl cellulose; Gelatin, casein, and the like. In addition, each of the polymers includes a homopolymer as well as a copolymer. These thickeners may be used singly or in combination of two or more.
본 발명의 하지제는, 필요에 따라 증점제를 배합함으로써, 하지제의 점도나 레올로지 특성을 조정할 수 있고, 하지제의 적용방법이나 적용개소 등, 그 용도에 따라 적당히 채용·선택할 수 있다.The base agent of the present invention can adjust the viscosity and rheology properties of the base agent by blending a thickener as required, and can be appropriately employed and selected in accordance with the application thereof such as a method of application of the base agent and application areas.
이들 첨가제는 1종을 단독으로 사용해도 되고, 또한 2종 이상을 병용해도 된다. 첨가제의 사용량은, 상기 고분지 폴리머와 금속 미립자로부터 형성된 복합체 100질량부에 대하여, 0.001~50질량부가 바람직하고, 0.005~10질량부가 보다 바람직하고, 0.01~5질량부가 보다 한층 바람직하다.These additives may be used singly or in combination of two or more kinds. The amount of the additive to be used is preferably from 0.001 to 50 parts by mass, more preferably from 0.005 to 10 parts by mass, still more preferably from 0.01 to 5 parts by mass, per 100 parts by mass of the composite formed from the above-mentioned highly branched polymer and fine metal particles.
[무전해 금속 도금의 하지층][Base layer of electroless metal plating]
상술의 본 발명의 무전해 도금 하지제는, 기재 상에 도포함으로써, 무전해 금속 도금의 하지층을 형성할 수 있다. 이 무전해 금속 도금의 하지층도 본 발명의 대상이다.The above-mentioned electroless plating plating solution of the present invention can be applied to a substrate to form a base layer of electroless metal plating. The base layer of this electroless metal plating is also the subject of the present invention.
상기 기재로는 특별히 한정되지 않으나, 비도전성 기재 또는 도전성 기재를 바람직하게 사용할 수 있다.The substrate is not particularly limited, but a non-conductive substrate or a conductive substrate can be preferably used.
비도전성 기재로는, 예를 들어 유리, 세라믹 등; 폴리에틸렌 수지, 폴리프로필렌 수지, 염화비닐 수지, 나일론(폴리아미드 수지), 폴리이미드 수지, 폴리카보네이트 수지, 아크릴 수지, PEN(폴리에틸렌나프탈레이트) 수지, PET(폴리에틸렌테레프탈레이트) 수지, PEEK(폴리에테르에테르케톤) 수지, ABS(아크릴로니트릴-부타디엔-스티렌 공중합체) 수지, 에폭시 수지, 폴리아세탈 수지 등; 종이 등을 들 수 있다. 이들은 시트 혹은 필름 등의 형태로 호적하게 사용되고, 이 경우의 두께에 대해서는 특별히 한정되지 않는다.Non-conductive substrates include, for example, glass, ceramics and the like; (Polyethylene naphthalate) resin, PET (polyethylene terephthalate) resin, PEEK (polyetheretherketone, polyetheretherketone), polyetherketone, polyetherketone Ketone) resin, ABS (acrylonitrile-butadiene-styrene copolymer) resin, epoxy resin, polyacetal resin and the like; Paper, and the like. They are suitably used in the form of sheet or film, and the thickness in this case is not particularly limited.
또한 도전성 기재로는, 예를 들어 ITO(주석도프 산화인듐)나, ATO(안티몬도프 산화주석), FTO(불소도프 산화주석), AZO(알루미늄도프 산화아연), GZO(갈륨도프 산화아연), 또한 각종 스테인레스강, 알루미늄 그리고 두랄루민 등의 알루미늄합금, 철 그리고 철합금, 구리 그리고 진유, 인청동, 백동 및 베릴륨동 등의 구리합금, 니켈 그리고 니켈합금, 그리고, 은 그리고 양은 등의 은합금 등의 금속 등을 들 수 있다.Examples of the conductive substrate include ITO (tin doped indium oxide), ATO (antimony doped tin oxide), FTO (fluorine doped tin oxide), AZO (aluminum doped zinc oxide), GZO (gallium doped zinc oxide) In addition, various kinds of metals such as stainless steel, aluminum and aluminum alloys such as duralumin, iron and iron alloys, copper and copper alloys such as crude oil, phosphor bronze, white copper and beryllium copper, nickel and nickel alloys, And the like.
나아가 상기 비도전성 기재 상에 이들의 도전성 기재로 박막이 형성된 기재도 사용가능하다.Furthermore, a substrate on which a thin film is formed with the conductive base material on the non-conductive substrate is also usable.
또한, 상기 기재는, 삼차원 성형체여도 된다.The substrate may be a three-dimensional molded body.
상기 (a)고분지 폴리머와 (b)금속 미립자(바람직하게는 이들로 이루어진 복합체)를 포함하고, 추가로, 필요에 따라 (c)아민 화합물 및 기타 성분을 포함하는 무전해 도금 하지제로부터 무전해 금속 도금의 하지층을 형성하는 구체적인 방법으로는, 우선 상기 고분지 폴리머와 금속 미립자(바람직하게는 이들로 이루어진 복합체)(와 필요에 따라 아민 화합물 및 기타 성분)를 적당한 용매에 용해 또는 분산하여 바니시의 형태로 하고, 이 바니시를, 금속도금 피막을 형성하는 기재 상에 스핀코트법; 블레이드코트법; 딥코트법; 롤코트법; 바코트법; 다이코트법; 스프레이코트법; 잉크젯법; 파운틴펜나노리소그래피(FPN), 딥펜나노리소그래피(DPN) 등의 펜리소그래피; 활판인쇄, 플렉소인쇄, 수지볼록판인쇄, 컨택트프린팅, 마이크로컨택트프린팅(μCP), 나노임프린팅리소그래피(NIL), 나노트랜스퍼프린팅(nTP) 등의 볼록판인쇄법; 그래비어인쇄, 인그레이빙 등의 오목판인쇄법; 평판인쇄법; 스크린인쇄, 등사판 등의 공판인쇄법; 오프셋인쇄법 등에 의해 도포하고, 그 후, 용매를 증발·건조시킴으로써, 박층을 형성한다.(C) an electroless plating plating solution containing (a) a high branching polymer and (b) fine metal particles (preferably a composite thereof) As a specific method for forming the undercoating layer of the metal plating, first, the above-mentioned precursor polymer and the metal fine particles (preferably a composite made of these) (and, if necessary, an amine compound and other components) are dissolved or dispersed in an appropriate solvent The varnish is formed into a varnish by a spin coating method on a substrate on which a metal plating film is formed; Blade coating method; Dip coating method; Roll coating method; Bar-coat method; Die coating method; Spray coat method; Ink jet method; Pen lithography such as fountain pen nanolithography (FPN) and deep pen nanolithography (DPN); Such as letterpress printing, flexographic printing, resin engraving printing, contact printing, microcontact printing (μCP), nanoimprinting lithography (NIL), and nano transfer printing (nTP); Concave printing methods such as gravure printing and engraving; Flat plate printing method; Screen printing methods such as screen printing and spooling boards; Offset printing or the like, and then the solvent is evaporated and dried to form a thin layer.
이들 도포방법 중에서도 스핀코트법, 스프레이코트법, 잉크젯법, 펜리소그래피, 컨택트프린팅, μCP, NIL 및 nTP가 바람직하다. 스핀코트법을 이용하는 경우에는, 단시간에 도포할 수 있으므로, 휘발성이 높은 용액이어도 이용할 수 있고, 또한, 균일성이 높은 도포를 행할 수 있다는 이점이 있다. 스프레이코트법을 이용하는 경우에는, 극소량의 바니시로 균일성이 높은 도포를 행할 수 있고, 공업적으로 매우 유리해진다. 잉크젯법, 펜리소그래피, 컨택트프린팅, μCP, NIL, nTP를 이용하는 경우에는, 예를 들어 배선 등의 미세패턴을 효율적으로 형성(묘화)할 수 있고, 공업적으로 매우 유리해진다.Of these coating methods, spin coating, spray coating, inkjet, pen lithography, contact printing, μCP, NIL and nTP are preferred. In the case of using the spin coat method, since it can be applied in a short time, a solution having high volatility can be used, and there is an advantage that coating with high uniformity can be performed. When the spray coat method is used, it is possible to perform coating with high uniformity with a very small amount of varnish, which is industrially very advantageous. In the case of using the ink jet method, the pen lithography, the contact printing, the μCP, the NIL, and the nTP, it is possible to efficiently form (draw) a fine pattern, for example, wiring, and is industrially very advantageous.
또한 여기서 이용되는 용매로는, 상기 복합체, 및 필요에 따라 아민 화합물 및 기타 성분을 용해 또는 분산하는 것이면 특별히 한정되지 않으나, 예를 들어, 물; 벤젠, 톨루엔, 자일렌, 에틸벤젠, 클로로벤젠, 디클로로벤젠 등의 방향족 탄화수소류; 메탄올, 에탄올, n-프로판올, 이소프로판올, n-부탄올, 2-부탄올, n-헥산올, n-옥탄올, 2-옥탄올, 2-에틸헥산올 등의 알코올류; 메틸셀로솔브, 에틸셀로솔브, 부틸셀로솔브, 페닐셀로솔브 등의 셀로솔브류; 프로필렌글리콜모노메틸에테르(PGME), 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노부틸에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노부틸에테르, 디프로필렌글리콜모노메틸에테르, 트리에틸렌글리콜모노메틸에테르, 트리프로필렌글리콜모노메틸에테르, 에틸렌글리콜디메틸에테르, 프로필렌글리콜디메틸에테르, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디에틸에테르, 디에틸렌글리콜디부틸에테르, 디에틸렌글리콜에틸메틸에테르, 디에틸렌글리콜부틸메틸에테르, 디에틸렌글리콜이소프로필메틸에테르, 디프로필렌글리콜디메틸에테르, 트리에틸렌글리콜디메틸에테르, 트리프로필렌글리콜디메틸에테르 등의 글리콜에테르류; 에틸렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노메틸에테르아세테이트(PGMEA) 등의 글리콜에스테르류; 테트라하이드로푸란(THF), 메틸테트라하이드로푸란, 1,4-디옥산, 디에틸에테르 등의 에테르류; 아세트산에틸, 아세트산부틸 등의 에스테르류; 아세톤, 메틸에틸케톤(MEK), 메틸이소부틸케톤(MIBK), 시클로펜탄온, 시클로헥사논 등의 케톤류; n-헵탄, n-헥산, 시클로헥산 등의 지방족 탄화수소류; 1,2-디클로로에탄, 클로로포름 등의 할로겐화지방족 탄화수소류; N-메틸-2-피롤리돈(NMP), N,N-디메틸포름아미드 (DMF), N,N-디메틸아세트아미드 등의 아미드류; 디메틸설폭사이드 등을 사용할 수 있다. 이들 용매는 단독으로 사용해도 되고, 2종류 이상의 용매를 혼합해도 된다. 나아가, 바니시의 점도를 조정하는 목적으로, 에틸렌글리콜, 프로필렌글리콜, 부틸렌글리콜 등의 글리콜류를 첨가해도 된다. 한편 전술한 바와 같이, (c)아민 화합물로서 아미노기가 알킬리덴기 보호된 아민 화합물을 이용하는 경우에는, 이 보호기를 해제하게 되는 알코올용매의 사용을 피하고, 용매로서 케톤류, 에테르류, 에스테르류 등을 이용하는 것이 호적하다.The solvent used herein is not particularly limited as long as it dissolves or disperses the complex and, if necessary, the amine compound and other components, for example, water; Aromatic hydrocarbons such as benzene, toluene, xylene, ethylbenzene, chlorobenzene, and dichlorobenzene; Alcohols such as methanol, ethanol, n-propanol, isopropanol, n-butanol, 2-butanol, n-hexanol, n-octanol, 2-octanol and 2-ethylhexanol; Cellosolves such as methyl cellosolve, ethyl cellosolve, butyl cellosolve and phenyl cellosolve; Propylene glycol monomethyl ether (PGME), propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, triethylene glycol monomethyl ether, tri Propylene glycol monomethyl ether, ethylene glycol dimethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, Glycol ethers such as diethylene glycol isopropyl methyl ether, dipropylene glycol dimethyl ether, triethylene glycol dimethyl ether, and tripropylene glycol dimethyl ether; Glycol esters such as ethylene glycol monomethyl ether acetate and propylene glycol monomethyl ether acetate (PGMEA); Ethers such as tetrahydrofuran (THF), methyltetrahydrofuran, 1,4-dioxane, and diethyl ether; Esters such as ethyl acetate and butyl acetate; Ketones such as acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), cyclopentanone, and cyclohexanone; aliphatic hydrocarbons such as n-heptane, n-hexane, and cyclohexane; Halogenated aliphatic hydrocarbons such as 1,2-dichloroethane and chloroform; Amides such as N-methyl-2-pyrrolidone (NMP), N, N-dimethylformamide (DMF) and N, N-dimethylacetamide; Dimethyl sulfoxide and the like can be used. These solvents may be used alone, or two or more kinds of solvents may be mixed. Furthermore, for the purpose of adjusting the viscosity of the varnish, glycols such as ethylene glycol, propylene glycol and butylene glycol may be added. On the other hand, when an amine compound in which an amino group is protected with an alkylidene group is used as the amine compound (c), the use of an alcohol solvent which releases the protecting group is avoided and ketones, ethers, It is convenient to use.
또한 상기 용매에 용해 또는 분산시키는 농도는 임의이나, 바니시 중의 비용매성분의 농도[하지제에 포함되는 용매를 제외하는 전체성분(고분지 폴리머와 금속 미립자(바람직하게는 이들로 이루어진 복합체), 필요에 따라 아민 화합물 및 기타 성분 등)의 농도]는 0.05~90질량%이며, 바람직하게는 0.1~80질량%이다.The concentration to be dissolved or dispersed in the solvent may be arbitrary, but the concentration of the non-solvent component in the varnish [the total components excluding the solvent included in the base resin (the combination of the high branch polymer and the metal fine particles The concentration of the amine compound and other components, etc., according to the concentration of the catalyst) is 0.05 to 90% by mass, preferably 0.1 to 80% by mass.
용매의 건조법으로는, 특별히 한정되는 것이 아니고, 예를 들어, 핫플레이트나 오븐을 이용하여, 적절한 분위기하, 즉 대기, 질소 등의 불활성 가스, 진공중 등에서 증발시키면 된다. 이에 따라, 균일한 성막면을 갖는 하지층을 얻는 것이 가능하다. 소성온도는, 용매를 증발시킬 수 있으면 특별히 한정되지 않으나, 40~250℃에서 행하는 것이 바람직하다.The drying method of the solvent is not particularly limited, and it may be evaporated under a suitable atmosphere, for example, in an inert gas such as air or nitrogen, or in a vacuum, using a hot plate or an oven. Thus, it is possible to obtain a ground layer having a uniform film-forming surface. The firing temperature is not particularly limited as long as the solvent can be evaporated, but it is preferably carried out at 40 to 250 ° C.
[무전해 도금처리, 금속 도금막, 금속 피막기재][Electroless plating treatment, metal plating film, metal film base]
상기와 같이 하여 얻어진 기재 상에 형성된 무전해 금속 도금의 하지층을 무전해 도금함으로써, 이 하지층 상에 금속 도금막이 형성된다. 이리 하여 얻어지는 금속 도금막, 그리고, 기재 상에 무전해 금속 도금의 하지층, 금속 도금막의 순으로 구비하는 금속 피막기재도 본 발명의 대상이다.The base layer of the electroless metal plating formed on the substrate thus obtained is subjected to electroless plating to form a metal plating film on the base layer. The metal plating film thus obtained, and the metal film base provided in the order of the base layer of electroless metal plating and the metal plating film on the substrate are also objects of the present invention.
무전해 도금처리(공정)는 특별히 한정되지 않고, 일반적으로 알려져 있는 어느 무전해 도금처리로 행할 수 있고, 예를 들어, 종래 일반적으로 알려져 있는 무전해 도금액을 이용하여, 이 도금액(욕)에 기재 상에 형성된 무전해 금속 도금의 하지층을 침지하는 방법이 일반적이다.The electroless plating treatment (process) is not particularly limited and can be carried out by any generally known electroless plating process. For example, the electroless plating solution known in the art can be used to coat the plating solution (bath) A method of immersing the base layer of the electroless metal plating formed on the substrate is generally used.
상기 무전해 도금액은, 주로 금속이온(금속염), 착화제, 환원제를 주로 함유하고, 기타 용도에 맞추어 pH조정제, pH완충제, 반응촉진제(제2착화제), 안정제, 계면활성제(도금막에의 광택부여용도, 피처리면의 젖음성 개선용도 등) 등이 적당히 포함되어 이루어진다.The electroless plating solution mainly contains a metal ion (metal salt), a complexing agent, and a reducing agent. The electroless plating solution contains a pH adjuster, a pH buffer, a reaction promoter (second complexing agent), a stabilizer, a surfactant Application of gloss, application for improving the wettability of the surface to be treated, etc.).
여기서 무전해 도금에 의해 형성되는 금속 도금막에 이용되는 금속으로는, 철, 코발트, 니켈, 구리, 파라듐, 은, 주석, 백금, 금 및 이들의 합금을 들 수 있고, 목적에 따라 적당히 선택된다.Examples of the metal used for the metal plating film formed by the electroless plating include iron, cobalt, nickel, copper, palladium, silver, tin, platinum, gold and alloys thereof. do.
또한 상기 착화제, 환원제에 대해서도 금속이온에 따라 적당히 선택하면 된다.The complexing agent and the reducing agent may be appropriately selected depending on the metal ion.
또한 무전해 도금액은 시판의 도금액을 사용해도 되고, 예를 들어 멜텍스(주)제의 무전해니켈도금약품(멜플레이트(등록상표) NI시리즈), 무전해구리도금약품(멜플레이트(등록상표) CU시리즈); 오쿠노제약공업(주)제의 무전해니켈도금액(ICP니코론(등록상표)시리즈, 탑피에나 650), 무전해구리도금액(OPC-700 무전해구리 M-K, ATS애드카퍼 IW, 동 CT, OPC카퍼(등록상표) AF시리즈, 동 HFS, 동 NCA), 무전해주석도금액(서브스타 SN-5), 무전해금도금액(플래쉬골드 330, 셀프골드 OTK-IT), 무전해은도금액(무덴실버); 코지마화학약품(주)제의 무전해파라듐도금액(팰릿II), 무전해금도금액(딥G시리즈, NC골드시리즈); 사사키화학약품(주)제의 무전해은도금액(에스다이아 AG-40); 일본카니젠(주)제의 무전해니켈도금액(카니젠(등록상표)시리즈, 슈머(등록상표)시리즈, 슈머(등록상표) 카니블랙(등록상표) 시리즈), 무전해파라듐도금액(S-KPD); 다우케미칼사제의 무전해구리도금액(큐포짓(등록상표) 카퍼믹스 시리즈, 서큐포짓(등록상표) 시리즈), 무전해파라듐도금액(팔라마스(등록상표) 시리즈), 무전해니켈도금액(듀라포짓(등록상표) 시리즈), 무전해금도금액(오로렉트로레스(등록상표) 시리즈), 무전해주석도금액(틴포짓(등록상표) 시리즈); 우에무라공업(주)제의 무전해구리도금액(스루컵(등록상표) ELC-SP, 동 PSY, 동 PCY, 동 PGT, 동 PSR, 동 PEA, 동 PMK), 애토텍재팬(주)제의 무전해구리도금액(프린트건트(등록상표) PV, 동 PVE) 등을 호적하게 이용할 수 있다.The electroless plating solution may be a commercially available plating solution. Examples of the electroless plating solution include electroless nickel plating solution (Mel Plate (registered trademark) NI series) manufactured by Meltex Co., Ltd., electroless copper plating solution ) CU series); Electroless copper plating solution (OPC-700 electroless copper MK, ATS AddCapper IW, copper CT, etc.), electroless nickel plating solution (ICP NIKOLON (registered trademark) series, OPC Copper (registered trademark) AF series, Dong HFS, Dong NCA), electroless annotation amount (Substar SN-5), electroless gold amount (flash gold 330, self gold OTK-IT) Muden Silver); Radium salt amount (Pallet II), electroless gold plating amount (Deep G series, NC Gold series) manufactured by Kojima Chemical Co., Ltd.; Electroless silver plating amount (S-DIAG AG-40) manufactured by Sasaki Chemical Co., Ltd.; (Electroless nickel plating solution) (manufactured by Nippon Kanzen Co., Ltd.), electroless nickel plating solution (Kanzen (registered trademark) series, Schumer (registered trademark) series and Schumer (registered trademark) -PPD); (Registered trademark) series electroless copper plating solution (manufactured by Dow Chemical Co., Ltd.), electroless nickel plating solution (electroless copper plating solution) (Electrolytic (registered trademark) series), electroless gold plating (Aurolectores (registered trademark) series), electroless tin plating (tin foil (registered trademark) series); (ThruCup (registered trademark) ELC-SP, copper PSY, copper PCY, copper PGT, copper PSR, copper PEA, copper PMK) manufactured by Uemura Industries Co., Ltd., (PrintGen (registered trademark) PV, copper PVE) can be used as the electroless copper plating solution.
상기 무전해 도금공정은, 도금욕의 온도, pH, 침지시간, 금속이온농도, 교반의 유무나 교반속도, 공기·산소의 공급유무나 공급속도 등을 조절함으로써, 금속 피막의 형성속도나 막두께를 제어할 수 있다.The electroless plating step may be carried out by adjusting the temperature and pH of the plating bath, the immersion time, the metal ion concentration, the presence or absence of stirring, the stirring speed, the supply / Can be controlled.
실시예Example
이하, 본 발명을 실시예에 의해 더욱 구체적으로 설명하나, 이로 인해 본 발명이 한정되는 것은 아니다. 실시예에 있어서, 시료의 물성측정은, 하기의 조건하에서 하기의 장치를 사용하여 행하였다.Hereinafter, the present invention will be described more specifically with reference to Examples, but the present invention is not limited thereto. In the examples, the physical properties of the samples were measured using the following apparatus under the following conditions.
(1) 분자량측정1: GPC(겔침투 크로마토그래피)(1) Molecular weight measurement 1: GPC (gel permeation chromatography)
장치: 토소(주)제 HLC-8220GPCDevice: HLC-8220GPC manufactured by Tosoh Corporation
칼럼: 쇼와덴코(주)제 Shodex(등록상표) KF-804L+KF-803LColumn: Shodex (registered trademark) KF-804L + KF-803L manufactured by Showa Denko K.K.
칼럼온도: 40℃Column temperature: 40 DEG C
용매: 테트라하이드로푸란Solvent: tetrahydrofuran
검출기: UV(254nm), RIDetector: UV (254 nm), RI
(2) 분자량측정2: GPC(겔침투 크로마토그래피)(2) Measurement of molecular weight 2: GPC (gel permeation chromatography)
장치: 토소(주)제 HLC-8220GPCDevice: HLC-8220GPC manufactured by Tosoh Corporation
칼럼: 쇼와덴코(주)제 Shodex(등록상표) KF-804L+KF-803LColumn: Shodex (registered trademark) KF-804L + KF-803L manufactured by Showa Denko K.K.
칼럼온도: 40℃Column temperature: 40 DEG C
용매: DMFSolvent: DMF
검출기: UV(254nm), RIDetector: UV (254 nm), RI
(3) 13C NMR스펙트럼(3) 13 C NMR spectrum
장치: 일본전자(주)제 JNM-ECA700Device: JNM-ECA700 manufactured by JEOL Ltd.
용매: CDCl3 Solvent: CDCl 3
완화시약: 트리스아세틸아세토네이트크롬(Cr(acac)3)Relaxation reagent: trisacetylacetonate chromium (Cr (acac) 3 )
기준: CDCl3(77.0ppm)Standard: CDCl 3 (77.0 ppm)
(4) ICP발광분석(유도결합플라즈마발광분석)(4) ICP emission analysis (inductively coupled plasma emission spectrometry)
장치: (주)시마즈제작소제 ICPM-8500Device: ICPM-8500 manufactured by Shimadzu Corporation
(5) TEM(투과형 전자현미경)화상(5) TEM (Transmission Electron Microscope) image
장치: (주)히다찌하이테크놀로지즈제 H-8000Device: Hitachi Hi-Technologies Co., Ltd. H-8000
(6) 5%중량감소온도(6) 5% weight reduction temperature
장치: (주)리가쿠제 시사열천칭 TG8120Device: Rigakujisa Shisa Thermal balance TG8120
측정조건: 공기분위기하Measurement conditions: air atmosphere
승온속도: 10℃분(25~500℃)Heating rate: 10 ° C (25 to 500 ° C)
또한, 약기호는 이하의 의미를 나타낸다.In addition, the weak symbols indicate the following meanings.
DCP: 트리시클로[5.2.1.02,6]데칸디메탄올디메타크릴레이트[신나카무라화학공업(주)제 DCP]DCP: tricyclo [5.2.1.0 2,6 ] decanedimethanol dimethacrylate (DCP, Shin-Nakamura Chemical Industry Co., Ltd.)
DVB: 디비닐벤젠[신닛테쯔화학(주)제 DVB-960]DVB: divinylbenzene (DVB-960, manufactured by Shin-Nittsu Chemical Co., Ltd.)
NVP: N-비닐피롤리돈[칸토화학(주)제]NVP: N-vinylpyrrolidone (manufactured by Kanto Kagaku Co., Ltd.)
NVA: N-비닐아세트아미드[쇼와덴코(주)제]NVA: N-vinylacetamide [manufactured by Showa Denko K.K.]
MCS: 메틸셀로솔브MCS: methyl cellosolve
DIPE: 디이소프로필에테르DIPE: Diisopropyl ether
V-59: 2,2'-아조비스(2-메틸부티로니트릴)V-59: 2,2'-azobis (2-methylbutyronitrile)
KBM-903: 3-아미노프로필트리메톡시실란(신에쯔화학공업(주)제)KBM-903: 3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.)
KBM-9103: 3-트리메톡시실릴-N-(1,3-디메틸부틸리덴)프로필아민(신에쯔화학공업(주)제)KBM-9103: 3-trimethoxysilyl-N- (1,3-dimethylbutylidene) propylamine (manufactured by Shin-Etsu Chemical Co., Ltd.)
[참고예 1] 무전해구리도금액의 조제[Reference Example 1] Preparation of electroless copper plating solution
1L의 플라스크에, 큐포짓(등록상표, 이하 동일) 카퍼믹스 328A[다우케미칼사제] 125mL, 큐포짓카퍼믹스 328L[다우케미칼사제] 125mL 및 큐포짓카퍼믹스 328C[다우케미칼사제] 15mL를 투입하고, 추가로 순수를 첨가하여 용액의 총량을 1L로 하였다.To a 1 L flask was added 125 mL of KUPOJET (registered trademark; hereinafter the same), CAPERMIX 328A (manufactured by DOW CHEMICAL CO., LTD.), 125 mL of KUPOZITCH KAPERMIX 328L (manufactured by DOW CHEMICAL CO., LTD.) And 15 mL of KUPOZIT CHAPTERMIX 328C , And pure water was further added to make the total amount of the solution to 1 liter.
[참고예 2] 무전해니켈도금액의 조제[Reference Example 2] Preparation of electroless nickel plating solution
1L의 플라스크에, 블루슈머[카니젠(주)제] 100mL를 투입하고, 추가로 순수를 첨가하여 용액의 총량을 500mL로 하였다.To a 1 L flask, 100 mL of Blue Schumer (manufactured by Kanzhen Co., Ltd.) was added, and further pure water was added to make the total amount of the solution to 500 mL.
[중합예 1: DVB, NVP, V-59를 이용한 고분지 폴리머1의 제조][Polymerization Example 1: Preparation of highly branched polymer 1 using DVB, NVP and V-59]
300mL의 반응플라스크에, MCS 97.6g을 투입하고, 교반하면서 5분간 질소를 유입하여, 내액이 환류될 때까지(대략 130℃) 가열하였다.97.6 g of MCS was added to a 300 mL reaction flask, nitrogen was introduced for 5 minutes while stirring, and the internal solution was heated to reflux (approximately 130 캜).
별도의 200mL의 반응플라스크에, 모노머A로서 DVB 6.51g(50mmol), 모노머B로서 NVP 8.34g(75mmol), 개시제C로서 V-59 14.42g(75mmol) 및 MCS 68.3g을 투입하고, 교반하면서 5분간 질소를 유입하고 질소치환을 행하여, 빙욕에서 0℃까지 냉각을 행하였다.(50 mmol) of DVB as monomer A, 8.34 g (75 mmol) of NVP as monomer B, 14.42 g (75 mmol) of V-59 as initiator C and 68.3 g of MCS were charged into a separate 200 mL reaction flask, Nitrogen gas was introduced for a minute, and nitrogen substitution was carried out, and cooling was carried out in an ice bath to 0 ° C.
전술한 300mL 반응플라스크 중의 환류되어 있는 MCS 중에, DVB, NVP, V-59가 투입된 상기 100mL의 반응플라스크로부터, 적하펌프를 이용하여, 내용물을 30분간에 걸쳐 적하하였다. 적하종료후, 추가로 1시간 교반하였다.From the 100 mL reaction flask charged with DVB, NVP, and V-59 into the refluxed MCS in the 300 mL reaction flask described above, the contents were dripped for 30 minutes using a dropping pump. After completion of dropwise addition, the mixture was further stirred for 1 hour.
이어서, 이 반응액을 헥산 975.62g에 첨가하여 폴리머를 슬러리상태로 침전시켰다. 이 슬러리를 감압여과하고, 진공건조하여, 백색분말의 목적물(고분지 폴리머1) 12.79g(수율 43.7%)을 얻었다.Then, this reaction solution was added to 975.62 g of hexane to precipitate the polymer in a slurry state. This slurry was filtered under reduced pressure, and vacuum-dried to obtain 12.79 g (yield: 43.7%) of a white powder as a target product (highly branched polymer 1).
얻어진 목적물의 GPC에 의한 폴리스티렌 환산으로 측정되는 중량평균 분자량Mw은 8,900, 분산도: Mw(중량평균 분자량)/Mn(수평균 분자량)은 3.8이었다.The weight average molecular weight Mw of the obtained target product as measured by GPC in terms of polystyrene was 8,900, and the degree of dispersion: Mw (weight average molecular weight) / Mn (number average molecular weight) was 3.8.
[중합예 2: DVB, NVP, V-59를 이용한 고분지 폴리머2의 제조][Polymerization Example 2: Preparation of highly branched polymer 2 using DVB, NVP and V-59]
200mL의 반응플라스크에, MCS 122.8g을 투입하고, 교반하면서 5분간 질소를 유입하여, 내액이 환류될 때까지(대략 130℃) 가열하였다.122.8 g of MCS was added to a 200 mL reaction flask, nitrogen was introduced for 5 minutes with stirring, and the internal solution was heated to reflux (approximately 130 캜).
별도의 100mL의 반응플라스크에, 모노머A로서 DVB 6.51g(50mmol), 모노머B로서 NVP 11.11g(100mmol), 개시제C로서 V-59 19.23g(100mmol) 및 MCS 85.99g을 투입하고, 교반하면서 5분간 질소를 유입하고 질소치환을 행하여, 빙욕에서 0℃까지 냉각을 행하였다.(100 mmol) of NVP as monomer B, 19.23 g (100 mmol) of V-59 as initiator C and 85.99 g of MCS as a monomer B were charged into a separate 100 mL reaction flask and 5 Nitrogen gas was introduced for a minute, and nitrogen substitution was carried out, and cooling was carried out in an ice bath to 0 ° C.
전술한 200mL 반응플라스크 중의 환류되어 있는 MCS 중에, DVB, NVP, V-59가 투입된 상기 100mL의 반응플라스크로부터, 적하펌프를 이용하여, 내용물을 30분간에 걸쳐서 적하하였다. 적하종료후, 추가로 1시간 교반하였다.From the 100 mL reaction flask charged with DVB, NVP, and V-59 into the refluxed MCS in the 200 mL reaction flask described above, the content was dropped over 30 minutes using a dropping pump. After completion of dropwise addition, the mixture was further stirred for 1 hour.
이어서, 이 반응액을 헥산 1,228g에 첨가하여 폴리머를 슬러리상태로 침전시켰다. 이 슬러리를 감압여과하고, 진공건조하여, 백색분말의 목적물(고분지 폴리머2) 15.44g(수율 41.9%)을 얻었다.The reaction solution was then added to 1,228 g of hexane to precipitate the polymer in a slurry state. The slurry was filtered under reduced pressure, and vacuum dried to obtain 15.44 g (yield: 41.9%) of the desired product of the white powder (highly branched polymer 2).
얻어진 목적물의 GPC에 의한 폴리스티렌 환산으로 측정되는 중량평균 분자량Mw은 2,600, 분산도: Mw(중량평균 분자량)/Mn(수평균 분자량)은 1.8이었다.The target product had a weight average molecular weight Mw of 2,600 and a polydispersity Mw (weight average molecular weight) / Mn (number average molecular weight) of 1.8 as measured by GPC in terms of polystyrene.
[중합예 3: DVB, NVP, V-59를 이용한 고분지 폴리머3의 제조][Polymerization Example 3: Preparation of highly branched polymer 3 using DVB, NVP and V-59]
200mL의 반응플라스크에, MCS 106.8g을 투입하고, 교반하면서 5분간 질소를 유입하여, 내액이 환류될 때까지(대략 130℃) 가열하였다.106.8 g of MCS was added to a 200 mL reaction flask, nitrogen was introduced for 5 minutes while stirring, and the internal solution was heated to reflux (approximately 130 캜).
별도의 100mL의 반응플라스크에, 모노머A로서 DVB 6.51g(50mmol), 모노머B로서 NVP 11.11g(100mmol), 개시제C로서 V-59 14.42g(75mmol) 및 MCS 74.74g을 투입하고, 교반하면서 5분간 질소를 유입하고 질소치환을 행하여, 빙욕에서 0℃까지 냉각을 행하였다.(100 mmol) of NVP as monomer B, 14.42 g (75 mmol) of V-59 as initiator C and 74.74 g of MCS as a monomer B were charged into a separate 100 mL reaction flask and 5 Nitrogen gas was introduced for a minute, and nitrogen substitution was carried out, and cooling was carried out in an ice bath to 0 ° C.
전술한 200mL 반응플라스크 중의 환류되어 있는 MCS 중에, DVB, NVP, V-59가 투입된 상기 100mL의 반응플라스크로부터, 적하펌프를 이용하여, 내용물을 30분간에 걸쳐서 적하하였다. 적하종료후, 추가로 1시간 교반하였다.From the 100 mL reaction flask charged with DVB, NVP, and V-59 into the refluxed MCS in the 200 mL reaction flask described above, the content was dropped over 30 minutes using a dropping pump. After completion of dropwise addition, the mixture was further stirred for 1 hour.
이어서, 이 반응액을 헥산 1,068g에 첨가하여 폴리머를 슬러리상태로 침전시켰다. 이 슬러리를 감압여과하고, 진공건조하여, 백색분말의 목적물(고분지 폴리머3) 16.50g(수율 51.5%)을 얻었다.The reaction solution was then added to 1,068 g of hexane to precipitate the polymer in a slurry state. This slurry was filtered under reduced pressure and vacuum dried to obtain 16.50 g (yield: 51.5%) of a white powder as a target product (highly branched polymer 3).
얻어진 목적물의 GPC에 의한 폴리스티렌 환산으로 측정되는 중량평균 분자량Mw은 7,500, 분산도: Mw(중량평균 분자량)/Mn(수평균 분자량)은 2.6이었다.The weight average molecular weight Mw of the obtained product measured by GPC in terms of polystyrene was 7,500 and the degree of dispersion Mw (weight average molecular weight) / Mn (number average molecular weight) was 2.6.
[중합예 4: DCP, NVP, V-59를 이용한 고분지 폴리머4의 제조][Polymerization Example 4: Preparation of highly branched polymer 4 using DCP, NVP and V-59]
200mL의 반응플라스크에, MCS 159.0g을 투입하고, 교반하면서 5분간 질소를 유입하여, 내액이 환류될 때까지(대략 130℃) 가열하였다.Into a 200 mL reaction flask, 159.0 g of MCS was added, nitrogen was introduced for 5 minutes while stirring, and the internal solution was heated to reflux (approximately 130 캜).
별도의 100mL의 반응플라스크에, 모노머A로서 DCP 16.6g(50mmol), 모노머B로서 NVP 16.67g(150mmol), 개시제C로서 V-59 14.42g(75mmol) 및 MCS 111.28g을 투입하고, 교반하면서 5분간 질소를 유입하고 질소치환을 행하여, 빙욕에서 0℃까지 냉각을 행하였다.16.6 g (50 mmol) of DCP as monomer A, 16.67 g (150 mmol) of NVP as monomer B, 14.42 g (75 mmol) of V-59 as initiator C and 111.28 g of MCS were charged in a separate 100 mL reaction flask, Nitrogen gas was introduced for a minute, and nitrogen substitution was carried out, and cooling was carried out in an ice bath to 0 ° C.
전술한 200mL 반응플라스크 중의 환류되어 있는 MCS 중에, DCP, NVP, V-59가 투입된 상기 100mL의 반응플라스크로부터, 적하펌프를 이용하여, 내용물을 30분간에 걸쳐서 적하하였다. 적하종료후, 추가로 1시간 교반하였다.From the 100 mL reaction flask charged with DCP, NVP and V-59 into the refluxed MCS in the 200 mL reaction flask described above, the content was dropped over 30 minutes using a dropping pump. After completion of dropwise addition, the mixture was further stirred for 1 hour.
이어서, 이 반응액을 헥산 1,590g에 첨가하여 폴리머를 슬러리상태로 침전시켰다. 이 슬러리를 감압여과하고, 진공건조하여, 백색분말의 목적물(고분지 폴리머4) 23.0g(수율 48.2%)을 얻었다.Subsequently, the reaction solution was added to 1,590 g of hexane to precipitate the polymer in a slurry state. The slurry was filtered under reduced pressure, and vacuum dried to obtain 23.0 g (yield: 48.2%) of a white powder as a target product (highly branched polymer 4).
얻어진 목적물의 GPC에 의한 폴리스티렌 환산으로 측정되는 중량평균 분자량Mw은 10,200, 분산도: Mw(중량평균 분자량)/Mn(수평균 분자량)은 3.4였다.The weight average molecular weight Mw of the obtained target product as measured by GPC in terms of polystyrene was 10,200 and the degree of dispersion Mw (weight average molecular weight) / Mn (number average molecular weight) was 3.4.
[중합예 5: DVB, NVA, V-59를 이용한 고분지 폴리머5의 제조][Polymerization Example 5: Preparation of highly branched polymer 5 using DVB, NVA and V-59]
200mL의 반응플라스크에, MCS 126.5g을 투입하고, 교반하면서 5분간 질소를 유입하여, 내액이 환류될 때까지(대략 130℃) 가열하였다.Into a 200 mL reaction flask, 126.5 g of MCS was added, nitrogen was introduced for 5 minutes while stirring, and the internal solution was heated to reflux (approximately 130 캜).
별도의 100mL의 반응플라스크에, 모노머A로서 DVB6.51g(50mmol), 모노머B로서 NVA 17.02g(200mmol), 개시제C로서 V-59 14.42g(75mmol) 및 MCS 88.55g을 투입하고, 교반하면서 5분간 질소를 유입하고 질소치환을 행하여, 빙욕에서 0℃까지 냉각을 행하였다.(50 mmol) of DVB as monomer A, 17.02 g (200 mmol) of NVA as monomer B, 14.42 g (75 mmol) of V-59 as initiator C and 88.55 g of MCS were charged into a separate 100 mL reaction flask, Nitrogen gas was introduced for a minute, and nitrogen substitution was carried out, and cooling was carried out in an ice bath to 0 ° C.
전술한 200mL 반응플라스크 중의 환류되어 있는 MCS 중에, DVB, NVA, V-59가 투입된 상기 100mL의 반응플라스크로부터, 적하펌프를 이용하여, 내용물을 30분간에 걸쳐서 적하하였다. 적하종료후, 추가로 1시간 교반하였다.From the 100 mL reaction flask charged with DVB, NVA and V-59 into the refluxed MCS in the 200 mL reaction flask described above, the content was dropped by dropping pump over 30 minutes. After completion of dropwise addition, the mixture was further stirred for 1 hour.
이어서, 이 반응액을 헥산 1,275g에 첨가하여 폴리머를 슬러리상태로 침전시켰다. 이 슬러리를 감압여과하고, 진공건조하여, 백색분말의 목적물(고분지 폴리머5) 17.23g(수율 45.5%)을 얻었다.Then, the reaction solution was added to 1,275 g of hexane to precipitate the polymer in a slurry state. This slurry was filtrated under reduced pressure and vacuum dried to obtain 17.23 g (yield: 45.5%) of the objective white powder (highly branched polymer 5).
얻어진 목적물의 GPC에 의한 폴리스티렌 환산으로 측정되는 중량평균 분자량Mw은 9,300, 분산도: Mw(중량평균 분자량)/Mn(수평균 분자량)은 4.9였다. 목적물의 13C NMR스펙트럼을 도 1에 나타낸다.The weight average molecular weight Mw of the obtained product measured by GPC in terms of polystyrene was 9,300 and the degree of dispersion Mw (weight average molecular weight) / Mn (number average molecular weight) was 4.9. The < 13 > C NMR spectrum of the target product is shown in Fig.
[중합예 6: DVB, NVP, V-59를 이용한 고분지 폴리머6의 제조][Polymerization Example 6: Preparation of highly branched polymer 6 using DVB, NVP and V-59]
200mL의 반응플라스크에, MCS 143.87g을 투입하고, 교반하면서 5분간 질소를 유입하여, 내액이 환류될 때까지(대략 130℃) 가열하였다.Into a 200 mL reaction flask, 143.87 g of MCS was added, nitrogen was introduced for 5 minutes while stirring, and the internal solution was heated to reflux (approximately 130 캜).
별도의 100mL의 반응플라스크에, 모노머A로서 DVB 6.51g(50mmol), 모노머B로서 NVP 22.23g(200mmol), 개시제C로서 V-59 14.42g(75mmol) 및 MCS 100.71g을 투입하고, 교반하면서 5분간 질소를 유입하고 질소치환을 행하여, 빙욕에서 0℃까지 냉각을 행하였다.(50 mmol) of DVB as monomer A, 22.23 g (200 mmol) of NVP as monomer B, 14.42 g (75 mmol) of V-59 as initiator C and 100.71 g of MCS were charged into a separate 100 mL reaction flask, Nitrogen gas was introduced for a minute, and nitrogen substitution was carried out, and cooling was carried out in an ice bath to 0 ° C.
전술한 200mL 반응플라스크 중의 환류되어 있는 MCS 중에, DVB, NVP, V-59가 투입된 상기 100mL의 반응플라스크로부터, 적하펌프를 이용하여, 내용물을 30분간에 걸쳐서 적하하였다. 적하종료후, 추가로 1시간 교반하였다.From the 100 mL reaction flask charged with DVB, NVP, and V-59 into the refluxed MCS in the 200 mL reaction flask described above, the content was dropped over 30 minutes using a dropping pump. After completion of dropwise addition, the mixture was further stirred for 1 hour.
이어서, 이 반응액을 헥산 1,439g에 첨가하여 폴리머를 슬러리상태로 침전시켰다. 이 슬러리를 감압여과하고, 진공건조하여, 백색분말의 목적물(고분지 폴리머6) 24.30g(수율 56.3%)을 얻었다.The reaction solution was then added to 1,439 g of hexane to precipitate the polymer in a slurry state. The slurry was filtered under reduced pressure and vacuum dried to obtain 24.30 g (yield: 56.3%) of the target product of the white powder (highly branched polymer 6).
얻어진 목적물의 GPC에 의한 폴리스티렌 환산으로 측정되는 중량평균 분자량Mw은 11,300, 분산도: Mw(중량평균 분자량)/Mn(수평균 분자량)은 3.6이었다. 목적물의 13C NMR스펙트럼을 도 2에 나타낸다.The weight average molecular weight Mw of the obtained product measured by GPC in terms of polystyrene was 11,300 and the degree of dispersion Mw (weight average molecular weight) / Mn (number average molecular weight) was 3.6. The 13 C NMR spectrum of the target product is shown in Fig.
[중합예 7: DCP, NVP, V-59를 이용한 고분지 폴리머7의 제조][Polymerization Example 7: Preparation of highly branched polymer 7 using DCP, NVP and V-59]
200mL의 반응플라스크에, MCS 196.0g을 투입하고, 교반하면서 5분간 질소를 유입하여, 내액이 환류될 때까지(대략 130℃) 가열하였다.Into a 200 mL reaction flask, 196.0 g of MCS was charged, nitrogen was introduced for 5 minutes while stirring, and the internal solution was heated to reflux (approximately 130 캜).
별도의 100mL의 반응플라스크에, 모노머A로서 DCP 16.60g(50mmol), 모노머B로서 NVP 27.79.g(250mmol), 개시제C로서 V-59 14.42g(75mmol) 및 MCS 137.22g을 투입하고, 교반하면서 5분간 질소를 유입하고 질소치환을 행하여, 빙욕에서 0℃까지 냉각을 행하였다.16.75 g (50 mmol) of DCP as monomer A, 27.79 g (250 mmol) of NVP as monomer B, 14.42 g (75 mmol) of V-59 as initiator C and 137.22 g of MCS were charged in a separate 100 mL reaction flask, Nitrogen was introduced for 5 minutes, and nitrogen replacement was carried out, followed by cooling to 0 캜 in an ice bath.
전술한 200mL 반응플라스크 중의 환류되어 있는 MCS 중에, DCP, NVP, V-59가 투입된 상기 100mL의 반응플라스크로부터, 적하펌프를 이용하여, 내용물을 30분간에 걸쳐서 적하하였다. 적하종료후, 추가로 1시간 교반하였다.From the 100 mL reaction flask charged with DCP, NVP and V-59 into the refluxed MCS in the 200 mL reaction flask described above, the content was dropped over 30 minutes using a dropping pump. After completion of dropwise addition, the mixture was further stirred for 1 hour.
이어서, 이 반응액을 헥산 1,960g에 첨가하여 폴리머를 슬러리상태로 침전시켰다. 이 슬러리를 감압여과하고, 진공건조하여, 백색분말의 목적물(고분지 폴리머7) 28.6g(수율 48.7%)을 얻었다.The reaction solution was then added to 1,960 g of hexane to precipitate the polymer in a slurry state. This slurry was filtered under reduced pressure and vacuum dried to obtain 28.6 g (yield: 48.7%) of the target product of the white powder (high branched polymer 7).
얻어진 목적물의 GPC에 의한 폴리스티렌 환산으로 측정되는 중량평균 분자량Mw은 12,800, 분산도: Mw(중량평균 분자량)/Mn(수평균 분자량)은 3.0이었다. 목적물의 13C NMR스펙트럼을 도 3에 나타낸다.The weight-average molecular weight Mw of the obtained target product as measured by GPC in terms of polystyrene was 12,800, and the degree of dispersion: Mw (weight average molecular weight) / Mn (number average molecular weight) was 3.0. The 13 C NMR spectrum of the target product is shown in Fig.
[제조예: Pd미립자 복합체의 합성(10g 스케일)][Production Example: Synthesis of Pd fine particle complex (10 g scale)]
Pd미립자-고분지 폴리머 복합체에 있어서의 Pd미립자함량(이론값)이 30wt%가 되도록, 이하의 순서로 복합체를 조제하였다. 한편 고분지 폴리머로서, 상술에서 조제한 고분지 폴리머5 내지 고분지 폴리머7을 이용하였다.The composite was prepared in the following procedure so that the Pd fine particle content (theoretical value) in the Pd fine particle-modified polymer composite was 30 wt%. On the other hand, high branch polymer 5 to high branched polymer 7 prepared as described above were used as the high branched polymer.
냉각기를 설치한 반응플라스크에, 아세트산파라듐[Pd(OAc)2, 카와켄파인케미칼(주)제] 6.36g, 클로로포름 63.56g(A량)을 투입하고 균일해질 때까지 교반하였다. 별도, 고분지 폴리머 7.0g을 클로로포름 70.00g(B량)에 용해시킨 용액을, 적하깔때기를 사용하여, 아세트산파라듐이 투입된 반응플라스크에 첨가하였다. 이 적하깔때기내를, 클로로포름 10.00g(C량) 및 에탄올 95.71g을 사용하여, 상기 반응플라스크에 유입하였다. 이 혼합물을, 질소분위기하 60℃에서 6시간 교반하였다.6.36 g of palladium acetate [Pd (OAc) 2 , manufactured by Kawaken Fine Chemicals Co., Ltd.] and 63.56 g (amount of chloroform) were added to a reaction flask equipped with a condenser and stirred until homogeneous. Separately, a solution prepared by dissolving 7.0 g of the higher branched polymer in 70.00 g (amount of B) of chloroform was added to the reaction flask to which the palladium acetate was added using a dropping funnel. The dropping funnel was introduced into the reaction flask using 10.00 g (C amount) of chloroform and 95.71 g of ethanol. This mixture was stirred for 6 hours at 60 占 폚 in a nitrogen atmosphere.
액온 30℃까지 냉각후, 이 용액을 IPE 1,196.33g에 첨가하여 재침 정제하였다. 석출한 폴리머를 감압여과하고, 50℃에서 진공건조하여, 측쇄에 아미드기를 갖는 고분지 폴리머와 Pd입자의 복합체를 얻었다.After cooling to a liquid temperature of 30 캜, this solution was added to 1,196.33 g of IPE, followed by reprecipitation. The precipitated polymer was filtered under reduced pressure and vacuum-dried at 50 占 폚 to obtain a complex of a high branching polymer having an amide group in the side chain and Pd particles.
Pd미립자함량(이론값)이 상기의 30wt%, 그리고 40wt%, 50wt% 또는 60wt%가 되는 복합체를, 하기 표 1에 나타낸 성분량을 이용하여, 폴리머를 고분지 폴리머6(HB-DVB-NVP-V59)[복합체1 내지 복합체4], 고분지 폴리머7(HB-DCP-NVP-V59)[복합체5 내지 복합체8], 고분지 폴리머5(HB-DBV-NVA-V59)[복합체9 내지 복합체12]로 각각 바꾸어 조제하고, 이들 복합체의 수율을 산출하였다.The polymer having the Pd fine particle content (theoretical value) of 30 wt%, and 40 wt%, 50 wt% or 60 wt% as described above was polymerized by using the amount of the components shown in Table 1 below. V59) [Composite 1 to Composite 4], Highly branched polymer 7 (HB-DCP-NVP-V59) [Composites 5 to 8], Highly branched polymer 5 ], And the yields of these complexes were calculated.
또한 얻어진 복합체에 있어서의 실제의 금속함유량을 ICP발광분석에 의해 측정하고, 그리고, 이 복합체의 5%중량감소온도를 측정하였다. 또한 TEM(투과형 전자현미경)화상으로부터, 화상 중의 50개 정도의 입자를 선택하고, 이들 입자경을 측정하여 평균값을 산출하고, 각 복합체에서의 Pd입자경으로 하였다.The actual metal content in the resulting composite was measured by ICP emission spectroscopy and the 5% weight reduction temperature of the composite was measured. From the TEM (transmission electron microscope) image, about 50 particles in the image were selected, and their particle diameters were measured to calculate an average value, which was regarded as the Pd particle diameter in each composite.
얻어진 결과를 표 2에 나타낸다.The obtained results are shown in Table 2.
[표 1][Table 1]
[표 2][Table 2]
[실시예 1 내지 실시예 3: 무전해 도금 하지제의 조제 그리고 무전해 도금의 검토][Examples 1 to 3: Preparation of electroless plating agent and examination of electroless plating]
상기에서 얻어진 복합체1(Pd미립자-고분지 폴리머6복합체), 복합체5(Pd미립자-고분지 폴리머7 복합체) 또는 복합체9(Pd미립자-고분지 폴리머5 복합체) 20mg과, KBM-903 80mg을 각각 혼합하고, 여기에 총량이 2g이 되도록 n-프로필알코올(PrOH)을 첨가하여, 균일해질 때까지 교반하였다. 용액이 균일해진 후, 추가로 n-프로필알코올로 8g을 첨가하여, 총량이 10g이 되도록 희석하고, 실시예 1(복합체1 함유), 실시예 2(복합체5 함유), 및 실시예 3(복합체9 함유)의 3종의 무전해 도금 하지제를 조제하였다.20 mg of the complex 1 (Pd fine particle-modified polymer 6 complex), 5 (Pd fine particle-modified polymer 7 complex) or composite 9 (Pd fine particle-modified polymer 5 complex) and 80 mg of KBM-903 N-propyl alcohol (PrOH) was added thereto so that the total amount became 2 g, and the mixture was stirred until homogeneous. After the solution became homogeneous, 8 g of n-propyl alcohol was further added to dilute the mixture to a total amount of 10 g, and the mixture was stirred at room temperature for 1 hour to prepare a solution containing Example 1 (containing Compound 1), Example 2 (containing Compound 5) 9) were prepared.
상기 실시예 1 내지 실시예 3의 무전해 도금 하지제를, 각각 유리기판에 부착된 폴리이미드필름(캡톤) 상에 스핀코트(200rpm으로 5초간, 1,000rpm으로 25초간)로 도포한 후, 이 폴리이미드필름을 유리기판으로부터 떼어내고, 핫플레이트에서 용매를 건조시켜(120℃, 5분간), 이 폴리이미드필름 상에 무전해 금속 도금의 하지층을 형성하였다.The electroless plating plating solutions of Examples 1 to 3 were applied to a polyimide film (capton) attached to a glass substrate by spin coating (200 rpm for 5 seconds and 1,000 rpm for 25 seconds) The polyimide film was removed from the glass substrate, and the solvent was dried on a hot plate (at 120 DEG C for 5 minutes) to form a base layer of electroless metal plating on the polyimide film.
이들 무전해 금속 도금의 하지층이 형성된 3종의 필름을, 각각 참고예 1에서 조제한 무전해구리도금액으로, 천천히 에어를 분사하면서 25℃에서 5분간 침지처리하였다. 그 후, 물로 도금면을 세정하고, 핫플레이트에서 어닐 처리(120℃, 5분)를 행하여, 무전해 금속 도금의 하지층 상에 금속 도금막(구리도금)이 형성된 도금기판을 얻었다.These three types of films each having the base layer of the electroless metal plating were immersed in an electroless copper plating solution prepared in Reference Example 1 at 25 캜 for 5 minutes while air was slowly sprayed. Thereafter, the surface to be plated was washed with water and annealed (120 DEG C, 5 minutes) on a hot plate to obtain a plated substrate having a metal plating film (copper plating) formed on the base layer of electroless metal plating.
상기 실시예 1 내지 실시예 3의 무전해 도금 하지제를 사용하여 얻어진 각 도금기판 상의 금속 도금막에 대하여, 도금막 균일성 및 기판밀착성을 평가하였다.The plating film uniformity and substrate adhesion were evaluated for the metal plating films on the respective plating substrates obtained by using the electroless plating plating solutions of Examples 1 to 3 above.
막균일성에 대해서는, 이하의 기준에 따라서 육안으로 평가하였다. 또한, 기판밀착성에 대해서는, 얻어진 도금기판 상의 금속 도금막 부분에, 폭 18mm의 셀로테이프(등록상표)[니치반(주)제 CT-18S]를 붙이고, 손가락으로 강하게 문질러 확실히 밀착시킨 후, 밀착시킨 셀로테이프(등록상표)를 한번에 벗기고, 금속 도금막의 상태를 이하의 기준에 따라서 육안으로 평가하였다. 결과를 표 3에 함께 나타낸다.The film uniformity was visually evaluated according to the following criteria. With regard to the substrate adhesion, Cellotape (registered trademark) (CT-18S, manufactured by Nichiban Co., Ltd.) having a width of 18 mm was stuck to the metal plating film portion on the obtained plating substrate, Cellotape (registered trademark) was peeled at once and the state of the metal plating film was visually evaluated according to the following criteria. The results are shown together in Table 3.
<막균일성의 평가>≪ Evaluation of Film Uniformity &
○: 하지층을 형성한 기판상 전체면에 금속광택이 있는 금속 도금막이 얼룩없이 석출A: A metal plating film having a metallic luster was deposited on the entire surface of the substrate on which the base layer was formed,
△: 기판표면은 피복되어 있으나 광택에 얼룩이 있음△: The surface of the substrate is coated, but the gloss is uneven.
×: 기판노출부가 있어 완전히는 피복되지 않음X: Not completely covered due to exposure of the substrate
<기판밀착성의 평가>≪ Evaluation of substrate adhesion &
○: 금속 도금막의 박리가 확인되지 않고 기판 상에 밀착?: No peeling of the metal plating film was observed,
△: 부분적으로 금속 도금막이 박리DELTA: Partly peeling off the metal plating film
×: 대부분(대략 5할 이상)의 금속 도금막이 박리되고 셀로테이프(등록상표)에 부착X: Most (about 50% or more) of the metal plating films were peeled off and adhered to Cellotape (registered trademark)
[표 3][Table 3]
[실시예 4 내지 실시예 6: 무전해 도금 하지제의 조제 그리고 무전해 도금의 검토][Examples 4 to 6: Preparation of electroless plating agent and examination of electroless plating]
KBM-903 대신에 KBM-9103을 동량 이용하고, 용매로서 n-프로필알코올(PrOH) 대신에 메틸이소부틸케톤(MIBK)을 동량 이용한 것 이외는, 실시예 1 내지 실시예 3과 마찬가지로 실시예 4(복합체1 함유), 실시예 5(복합체5 함유), 및 실시예 6(복합체9 함유)의 3종의 무전해 도금 하지제를 조제하고, 이것을 이용하여 상기와 마찬가지로 폴리이미드필름 상에 무전해 금속 도금의 하지층의 형성을 행하고, 계속해서 상기와 마찬가지로 참고예 1에서 조제한 무전해구리도금액을 이용하여 무전해 금속 도금의 하지층 상에 금속 도금막(구리도금)이 형성된 도금기판을 얻고, 상기와 마찬가지로 도금막 균일성 및 기판밀착성을 평가하였다. 얻어진 결과를 표 4에 함께 나타낸다.Except that KBM-9103 was used in an equivalent amount instead of KBM-903 and methyl isobutyl ketone (MIBK) was used in place of n-propyl alcohol (PrOH) as a solvent in the same amounts as in Examples 1 to 3, (Containing the complex 1), Example 5 (containing the complex 5), and Example 6 (containing the complex 9) were prepared and electroless plating was carried out on the polyimide film as described above Subsequently, a plating substrate on which a metal plating film (copper plating) was formed on the base layer of the electroless metal plating using the electroless copper plating solution prepared in Reference Example 1 was obtained in the same manner as described above , And the uniformity of the plating film and the substrate adhesion were evaluated in the same manner as described above. The obtained results are shown together in Table 4.
[표 4][Table 4]
[실시예 7: 무전해 도금 하지제의 조제 그리고 무전해니켈도금의 검토][Example 7: Preparation of electroless plating plating agent and examination of electroless nickel plating]
실시예 6과 마찬가지로 실시예 7의 무전해 도금 하지제[복합체9(Pd미립자-고분지 폴리머5 복합체), 아민 화합물: KB-9103, MIBK함유]를 조제하고, 상기와 마찬가지로 폴리이미드필름 상에 무전해 금속 도금의 하지층의 형성을 행하였다. 이 필름을, 참고예 2에서 조제하고, 그리고 85℃로 가열한 참고예 2에 기재된 무전해니켈도금액으로 3분간 침지처리하였다. 그 후, 물로 도금면을 세정하고, 핫플레이트에서 어닐처리(120℃, 5분)를 행하여, 무전해 금속 도금의 하지층 상에 금속 도금막(니켈도금)이 형성된 도금기판을 얻었다.(Containing Pd fine particles-high branching polymer 5 complex), amine compound: KB-9103, containing MIBK] of Example 7 was prepared in the same manner as in Example 6, and similarly to the above, on the polyimide film And the underlayer of the electroless metal plating was formed. This film was prepared in Referential Example 2 and immersed in the electroless nickel plating solution described in Reference Example 2 heated at 85 캜 for 3 minutes. Thereafter, the surface to be plated was washed with water and annealed (120 DEG C, 5 minutes) on a hot plate to obtain a plated substrate on which a metal plating film (nickel plating) was formed on the base layer of electroless metal plating.
[실시예 8: 무전해 도금 하지제의 조제 그리고 무전해니켈도금의 검토][Example 8: Preparation of electroless plating plating agent and examination of electroless nickel plating]
상기 실시예 6에 있어서 아민 화합물: KBM-9103을 사용하지 않고 무전해 도금 하지제를 조제하였다. 즉, 상기에서 얻어진 복합체9(Pd미립자-고분지 폴리머5 복합체) 20mg을 메틸이소부틸케톤(MIBK)에 총량이 10g이 되도록 용해하여, 실시예 8의 무전해 도금 하지제로 하였다.In Example 6, an electroless plating plating solution was prepared without using the amine compound KBM-9103. That is, 20 mg of the composite 9 (Pd fine particles-high branching polymer 5 composite) obtained above was dissolved in methyl isobutyl ketone (MIBK) so that the total amount was 10 g to prepare an electroless plating base material of Example 8.
이 무전해 도금 하지제를 이용하여, 상기와 마찬가지로 유리기판에 부착한 폴리이미드필름(캡톤) 상에 스핀코트(200rpm으로 5초간, 1,000rpm으로 25초간)로 도포한 후, 이 폴리이미드필름을 유리기판으로부터 떼어내고, 핫플레이트로 용매를 건조시켜(120℃, 5분간), 이 폴리이미드필름 상에 무전해 금속 도금의 하지층을 형성하였다.The above electroless plating plating agent was applied on a polyimide film (capton) attached to a glass substrate in the same manner as above using a spin coat (200 rpm for 5 seconds and 1,000 rpm for 25 seconds), and then the polyimide film The film was peeled off from the glass substrate, and the solvent was dried with a hot plate (at 120 DEG C for 5 minutes) to form a base layer of electroless metal plating on the polyimide film.
이 무전해 금속 도금의 하지층이 형성된 필름을, 참고예 2에 기재한 무전해니켈도금액으로 85℃에서 3분간 침지처리하였다. 그 후, 물로 도금면을 세정하고, 핫플레이트에서 어닐처리(120℃, 5분)를 행하여, 무전해 금속 도금의 하지층 상에 금속 도금막(니켈도금)이 형성된 도금기판을 얻었다.The film on which the base layer of the electroless metal plating was formed was immersed in an electroless nickel plating solution described in Reference Example 2 at 85 캜 for 3 minutes. Thereafter, the surface to be plated was washed with water and annealed (120 DEG C, 5 minutes) on a hot plate to obtain a plated substrate on which a metal plating film (nickel plating) was formed on the base layer of electroless metal plating.
상기 실시예 7 및 실시예 8에서 얻어진 도금기판에 대하여, 상기와 마찬가지로 도금막 균일성 및 기판밀착성을 평가하였다. 얻어진 결과를 표 5에 함께 나타낸다.The plated substrates obtained in Examples 7 and 8 were evaluated for plating film uniformity and substrate adhesion as described above. The obtained results are shown together in Table 5.
[표 5][Table 5]
Claims (18)
(a)분자내에 2개 이상의 라디칼중합성 이중결합을 갖는 모노머A와, 분자내에 아미드기 및 적어도 1개의 라디칼중합성 이중결합을 갖는 모노머B를 적어도 포함하는 중합성 화합물과, 이 모노머A의 몰수에 대하여 5~200몰%량의 중합개시제C의 중합물로 이루어진 고분지 폴리머로서,
이 중합물이, 적어도 하기 식[1] 그리고 식[2] 또는 식[3]으로 표시되는 구조부분을 포함하여 구성되는 고도로 분지된 중합쇄를 갖고, 또한 이 중합쇄의 말단에 상기 중합개시제C의 라디칼개열단편이 탑재되어 이루어진, 고분지 폴리머, 및
(b)금속 미립자
를 포함하는 하지제.
[화학식 1]
(식 중,
R1, R2, R3, R4, R5 및 R6은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,
A1은 단결합 또는 2가의 유기기를 나타내고,
R7, R8 및 R9는, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,
R10 및 R11은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기 또는 페닐기를 나타내거나, R10과 R11이 하나가 되어 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 2 내지 6의 알킬렌기를 형성할 수도 있고,
R12, R13 및 R14는, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타내고,
R15 및 R16은, 각각 독립적으로, 수소원자, 에테르결합, 아미드결합 및 에스테르결합으로 이루어진 군으로부터 선택되는 적어도 1개의 결합을 포함하고 있을 수도 있는 탄소원자수 1 내지 10의 알킬기를 나타낸다.)An electroless plating pretreatment agent for forming a metal plating film by electroless plating on a substrate,
(a) a polymerizable compound comprising at least monomer A having two or more radical double bonds in the molecule and monomer B having an amide group and at least one radical double intermolecular double bond, and a polymerizable compound having a number of moles of the monomer A As a high branched polymer composed of a polymer of a polymerization initiator C in an amount of 5 to 200 mol%
Wherein the polymer has a highly branched polymer chain comprising at least a structural moiety represented by the following formula [1] and formula [2] or formula [3], and at the end of the polymerization chain, A branched polymer prepared by incorporating a radical cleavage fragment, and
(b) metal fine particles
≪ / RTI >
[Chemical Formula 1]
(Wherein,
R 1 , R 2 , R 3 , R 4 , R 5 and R 6 each independently may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond An alkyl group having 1 to 10 carbon atoms,
A 1 represents a single bond or a divalent organic group,
R 7 , R 8 and R 9 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, ,
R 10 and R 11 each independently represent an alkyl group having 1 to 10 carbon atoms or a phenyl group which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, , R 10 and R 11 may be taken together to form an alkylene group having 2 to 6 carbon atoms which may contain at least one bond selected from the group consisting of an ether bond, an amide bond and an ester bond,
R 12 , R 13 and R 14 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond, ,
R 15 and R 16 each independently represent an alkyl group having 1 to 10 carbon atoms which may contain at least one bond selected from the group consisting of a hydrogen atom, an ether bond, an amide bond and an ester bond.
상기 (a)고분지 폴리머 중의 아미드기에, 상기 (b)금속 미립자가 부착 또는 배위한 복합체를 포함하는, 하지제.The method according to claim 1,
Wherein the amide group in the (a) high branching polymer comprises a composite for adhering or spreading the (b) fine metal particles.
상기 모노머A가, 비닐기 또는 (메트)아크릴로일기 중 어느 일방 또는 쌍방을 갖는 화합물인, 하지제.3. The method according to claim 1 or 2,
Wherein the monomer A is a compound having either or both of a vinyl group and a (meth) acryloyl group.
상기 모노머A가, 디비닐 화합물 또는 디(메트)아크릴레이트 화합물인, 하지제.The method of claim 3,
Wherein the monomer A is a divinyl compound or a di (meth) acrylate compound.
상기 모노머A가, 탄소원자수 3~30의 방향환기, 또는 탄소원자수 3~30의 지환식기를 갖는 화합물인, 하지제.5. The method of claim 4,
Wherein the monomer A is a compound having an aromatic ring having 3 to 30 carbon atoms or an alicyclic group having 3 to 30 carbon atoms.
상기 모노머A가 디비닐벤젠 또는, 트리시클로[5.2.1.02,6]데칸디메탄올디(메트)아크릴레이트인, 하지제.6. The method of claim 5,
Wherein the monomer A is divinylbenzene or tricyclo [5.2.1.0 2,6 ] decanedimethanol di (meth) acrylate.
상기 중합개시제C가 아조계 중합개시제인, 하지제.7. The method according to any one of claims 1 to 6,
Wherein the polymerization initiator C is an azo-based polymerization initiator.
상기 중합성 화합물은, 상기 모노머A의 몰수에 대하여 5~300몰의 양의 상기 모노머B를 포함하는, 하지제.8. The method according to any one of claims 1 to 7,
Wherein the polymerizable compound comprises the monomer B in an amount of 5 to 300 moles relative to the number of moles of the monomer A.
상기 A1은, 탄소원자수 3~30의 방향환기, 또는 탄소원자수 3~30의 지환식기를 갖는 2가의 유기기를 나타내는, 하지제.The method according to claim 1,
A 1 represents an aromatic group having 3 to 30 carbon atoms or a divalent organic group having an alicyclic group having 3 to 30 carbon atoms.
상기 (a)고분지 폴리머가, 적어도 상기 식[1] 그리고 식[2]로 표시되는 구조부분을 포함하는 중합쇄를 구성하는 중합물로 이루어진 고분지 폴리머로서,
식[1] 중,
R1, R2, R5 및 R6은 수소원자를 나타내고,
R3, R4는 수소원자 또는 메틸기를 나타내고,
A1은 페닐렌기 또는 트리시클로[5.2.1.02,6]데칸-4,8-디일-디(메틸렌옥시카르보닐)기를 나타내고,
식[2] 중,
R7, R8 및 R9는 수소원자를 나타내고,
R10 및 R11은, 각각 독립적으로 수소원자 또는 메틸기를 나타내거나, R10과 R11이 하나가 되어 n-프로필렌기를 나타내고,
이 중합쇄의 말단에 2,2'-아조비스(2-메틸부티로니트릴) 및 디메틸2,2'아조비스(2-메틸프로피오네이트)로부터 선택되는 중합개시제C의 라디칼개열단편이 탑재되어 이루어진,
하지제.The method according to claim 1,
Wherein the (a) high branching polymer is a high branching polymer composed of a polymer constituting at least a polymer chain including structural moieties represented by the formulas [1] and [2]
In the formula [1]
R 1 , R 2 , R 5 and R 6 represent a hydrogen atom,
R 3 and R 4 represent a hydrogen atom or a methyl group,
A 1 represents a phenylene group or a tricyclo [5.2.1.0 2,6 ] decane-4,8-diyl-di (methyleneoxycarbonyl) group,
In formula [2]
R 7 , R 8 and R 9 represent a hydrogen atom,
R 10 and R 11 each independently represent a hydrogen atom or a methyl group, or R 10 and R 11 are combined to form an n-propylene group,
A radical cleavage fragment of a polymerization initiator C selected from 2,2'-azobis (2-methylbutyronitrile) and dimethyl 2,2 'azobis (2-methylpropionate) is loaded at the end of the polymerization chain Made,
Do not.
상기 (b)금속 미립자가, 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 파라듐(Pd), 은(Ag), 주석(Sn), 백금(Pt) 및 금(Au)으로 이루어진 군으로부터 선택되는 적어도 1종의 금속의 미립자인, 하지제.11. The method according to any one of claims 1 to 10,
Wherein the metal fine particles (b) are selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), tin (Au). ≪ / RTI >
상기 (b)금속 미립자가, 파라듐 미립자인, 하지제.12. The method of claim 11,
Wherein the metal fine particles (b) are palladium fine particles.
상기 (b)금속 미립자가, 1~100nm의 평균입경을 갖는 미립자인, 하지제.13. The method according to any one of claims 1 to 12,
Wherein the metal fine particles (b) are fine particles having an average particle diameter of 1 to 100 nm.
추가로 (c)아민 화합물을 함유하는, 하지제.14. The method according to any one of claims 1 to 13,
Further comprising (c) an amine compound.
A공정: 제1항 내지 제14항 중 어느 한 항에 기재된 무전해 도금 하지제를 기재 상에 도포하고, 무전해 금속 도금의 하지층을 이 기재 상에 구비하는 공정,
B공정: 이 하지층을 구비한 기재를 무전해 도금욕에 침지하고, 금속 도금막을 이 하지층 상에 형성하는 공정.A process for producing a metal film base comprising the steps A and B described below.
A step: a step of applying the electroless plating plating agent according to any one of claims 1 to 14 on a base material and providing a base layer of electroless metal plating on the base material,
Step B: A step of immersing the base material having the base layer in an electroless plating bath to form a metal plating film on the base layer.
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