KR20170143336A - Semiconductor device and display device having thereof - Google Patents

Abstract

According to an embodiment of the present invention, a semiconductor device comprises: a light emitting structure including a first conductive semiconductor layer, first, second and third active layers spaced apart from each other on the first conductive semiconductor layer, a second conductive semiconductor layer separately disposed on the first, second and third active layers, a first light emitting unit including the first active layer, a second light emitting unit including the second active layer, and a third light emitting unit including the third active layer; a reflective electrode separately disposed on the second conductive semiconductor layer; a connection electrode vertically overlapping with the first conductive semiconductor layer, and being in electrically contact with the first conductive semiconductor layer of the light emitting structure; a protective layer disposed on the light emitting structure to expose a lower surface of the first conductive semiconductor layer; a plurality of through holes formed in the protective layer to expose the reflective electrode and the connection electrode; a first electrode formed in the through holes, and electrically connected to the connection electrode; and a second electrode formed in the through holes, and electrically connected to the reflective electrodes of the first, second and third light emitting units, separately.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,

An embodiment relates to a semiconductor device and a display device including the semiconductor device.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, Speed, safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diodes (LEDs), automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

Recently, high definition (HD) and large screen display devices have been demanded. However, liquid crystal display devices and organic field display devices having complicated configurations are low in yield and high in cost, and it is difficult to realize a high-quality large-screen display device.

Embodiments provide a chip level semiconductor device and a display device including the same.

The semiconductor device of the embodiment includes a first conductive type semiconductor layer, first, second and third active layers arranged on the first conductive type semiconductor layer, and first, second and third active layers arranged on the first, A second light emitting portion including the first active layer, the second light emitting portion including the second active layer, and a third light emitting portion including the second active layer, the second light emitting portion including the second active layer and the third active layer; A reflective electrode disposed on the second conductive semiconductor layer; A connection electrode electrically connected to the first conductivity type semiconductor layer of the light emitting structure in a direction perpendicular to the first conductivity type semiconductor layer; A protective layer disposed on the light emitting structure and exposing a lower surface of the first conductive semiconductor layer; A plurality of through holes formed in the protection layer to expose the reflective electrode and the connection electrode; A first electrode formed in the through hole and electrically connected to the connection electrode; And a second electrode formed on the through hole and electrically connected to the reflective electrode of the first, second, and third light emitting portions, respectively.

The semiconductor device of the embodiment includes a first conductive type semiconductor layer, first, second and third active layers arranged on the first conductive type semiconductor layer, and first, second and third active layers arranged on the first, A second light emitting portion including the first active layer, the second light emitting portion including the second active layer, and a third light emitting portion including the second active layer, the second light emitting portion including the second active layer and the third active layer; A reflective electrode disposed on the second conductive semiconductor layer; A protective layer disposed on the light emitting structure to expose the reflective electrode; A first electrode formed on the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer, and a second electrode formed on the through hole, the first electrode, the second electrode, and the third electrode, And a second electrode electrically connected to the first electrode.

The semiconductor device of the embodiment includes a first conductive type semiconductor layer, first, second and third active layers arranged on the first conductive type semiconductor layer, and a second active layer disposed on the first, A light emitting structure including a conductive semiconductor layer and including a first light emitting portion including the first active layer, a second light emitting portion including the second active layer, and a third light emitting portion including the third active layer; A reflective electrode electrically contacting the first conductive semiconductor layer of the light emitting structure; A protective layer overlapping the light emitting structure in the vertical direction with the reflective electrode interposed therebetween; A through hole formed in the protection layer to expose the reflective electrode; A first electrode formed in the through hole and electrically in contact with the reflective electrode; And a second electrode electrically connected to the second conductivity type semiconductor layer of the first, second, and third light emitting portions, respectively.

According to the embodiment, the chip level light emitting element including the individually driven first, second and third light emitting portions can function as the pixels of the display device. At this time, the first, second, and third light emitting units function as respective subpixels of the pixel, thereby realizing a high-resolution large-sized display device.

1A and 1B are sectional views of a light emitting device of a first embodiment.
1C is a top view of the connection electrode of FIG. 1A.
2A is a plan view of a display device in which the light emitting elements of FIG.
2B and 2C are sectional views of I-I 'of FIG. 2A.
3A and 3B are sectional views of a light emitting device according to another structure of the first embodiment.
4A to 4G are cross-sectional views illustrating a method of manufacturing the light emitting device of FIG. 1A.
4H and 4I are process sectional views showing a method of manufacturing the light emitting device of FIG. 3A.
FIGS. 5A to 5F are cross-sectional views illustrating a method of manufacturing the light emitting structure of FIG. 1B.
6A and 6B are cross-sectional views of the light emitting device of the second embodiment.
7A is a plan view of a display device in which the light emitting elements of the second embodiment are arranged for each pixel region.
Figs. 7B and 7C are cross-sectional views taken along the line I-I 'in Fig. 7A.
8A and 8B are sectional views of a light emitting device according to another structure of the second embodiment.
9A to 9F are cross-sectional views showing the manufacturing method of the light emitting device of FIG. 6A.
10A and 10B are sectional views of a light emitting device of a third embodiment.
11A is a plan view of a display device in which the light emitting elements of the third embodiment are arranged for each pixel region.
11B and 11C are cross-sectional views taken along line I-I 'of FIG. 11A.
12A to 12C are sectional views of a light emitting device according to another structure of the third embodiment.
13A to 13F are process sectional views showing a method of manufacturing the light emitting device of the third embodiment.
14A and 14B are cross-sectional views of the light emitting device of the fourth embodiment.
15 is a view of a mobile communication terminal including a panel in which light emitting devices of the embodiment are disposed.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device. The light emitting device and the light receiving device may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The semiconductor device according to this embodiment may be a light emitting device.

The light emitting device emits light by recombination of electrons and holes, and the wavelength of the light is determined by the energy band gap inherent to the material. Thus, the light emitted may vary depending on the composition of the material.

Hereinafter, the semiconductor device of the embodiment will be described as a light emitting element.

Hereinafter, the semiconductor device of the embodiment will be described in detail with reference to the accompanying drawings.

1A and 1B are cross-sectional views of a light-emitting device of a first embodiment, and FIG. 1B is a plan view of a connection electrode of FIG. 1A.

1A, the light emitting device 10 includes a light emitting structure 100 including first, second, and third light emitting portions P1, P2, and P3, and first, second, and third light emitting portions P1 P2 and P3 and the first conductivity type semiconductor layer 110 of the first, second and third light emitting portions P1, P2 and P3 through the passivation layer 170, A first electrode 194 connected to the second conductivity type semiconductor layer 130 of the first, second, and third light emitting units P1, P2, and P3 through the first electrode 194 and the passivation layer 170, And second electrodes 191, 192, and 193.

The first electrode 194 and the second electrodes 191, 192 and 193 are formed in a flip chip type in which the second conductivity type semiconductor layer 130 of the light emitting structure 100 is arranged .

The light emitting structure 100 includes a first conductivity type semiconductor layer 110, an active layer 120 and a second conductivity type semiconductor layer 130 stacked in that order, and the second conductivity type semiconductor layer 130 includes an active layer 120 The first conductive semiconductor layer 110 and the first conductive semiconductor layer 110 may overlap with each other in the vertical direction. The active layer 120 is disposed on the second conductivity type semiconductor layer 130 and the first conductivity type semiconductor layer 110 is disposed on the active layer 120. [ At this time, the active layer 120 and the second conductivity type semiconductor layer 130 of the first, second, and third light emitting portions P1, P2, and P3 may be separated from each other.

The first conductive semiconductor layer 110 may be formed of a compound semiconductor such as a Group III-V or a Group II-VI, and may be doped with an n-type dopant. The first conductive semiconductor layer 110 may be a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? _y Ga _1-xy P (0? x? 1, 0? y? 1, 0? x + y? 1). For example, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. However, the present invention is not limited thereto. The n-type dopant may be selected from Si, Ge, Sn, Se, Te, and the like, but is not limited thereto.

The active layer 120 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto. An active layer 120 in this case is formed of a quantum well structure, for example, having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) A well layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -a- b} N (0? A? ₁ , 0? B? ₁ , 0? A + b? 1) .

The active layer 120 may have a composition of a well layer of (Al _p Ga _{1 -p} ) _q In _{1 -q} P (where _{0 ?} P? _{1, 0 ? Q? 1} ) the (Al Ga _{1 -p1 p1) q1} In _{1 - q1} be a P layer (where, 0≤p1≤1, 0≤q1≤1), but the embodiment is not limited thereto. For example, the active layer 120 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP Do not. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

The active layer 120 is a layer where electrons (or holes) injected through the first conductive type semiconductor layer 110 and holes (or electrons) injected through the second conductive type semiconductor layer 130 meet. As the electrons and the holes recombine, the active layer 120 transits to a low energy level and can generate light having a wavelength corresponding thereto. For example, the active layer 120 of the first, second, and third light emitting portions P1, P2, and P3 can generate light of a blue (B) wavelength band.

The second conductive semiconductor layer 130 may be formed of a compound semiconductor such as a Group III-V or a Group II-VI, and may be doped with a p-type dopant. The second conductivity type semiconductor layer 130 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? _x Al _y Ga _1-xy P (0? x? 1, 0? y? 1, 0? x + y? 1). For example, the second conductive semiconductor layer 130 may be formed of a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, but is not limited thereto. The P-type dopant may be selected from Mg, Zn, Ca, Sr, Ba, and the like, but is not limited thereto.

The first, second, and third light emitting portions P1, P2, and P3 of the light emitting structure 100 emit light of a blue (B) wavelength band through the first conductive semiconductor layer 110, The wavelength conversion layer 122 and the blue, green, and red color filters 123a, 123b, and 123c may be disposed in the direction in which the light of the (B) wavelength range is emitted. The wavelength conversion layer 122 and the blue, green, and red color filters 123a, 123b, and 123c are vertically overlapped with the active layer 120 with the first conductivity type semiconductor layer 110 sandwiched therebetween. Respectively.

The wavelength conversion layer 122 can absorb light of a blue (B) wavelength band emitted from the first, second and third light emitting portions P1, P2 and P3 and convert the light into a white (W) have. For this, the wavelength conversion layer 122 may include wavelength conversion particles. The wavelength conversion layer 122 may include a wavelength conversion particle (s) such as a translucent epoxy resin, a silicone resin, a polyimide resin, a urea resin, But it is not limited thereto.

The wavelength converting particles may include at least one of a phosphor and a quantum dot (QD). Hereinafter, the wavelength converting particle is described as a phosphor.

The phosphor may include any one of a YAG-based, TAG-based, silicate-based, sulfide-based or nitride-based fluorescent material, but the embodiment is not limited to the type of the fluorescent material. YAG and TAG-based fluorescent material (Y, Tb, Lu, Sc , La, Gd, Sm) 3 (Al, Ga, In, Si, Fe) 5 (O, S) 12: Ce may be selected from, Silicate The phosphor can be selected from (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl) The sulfide-based fluorescent material can be selected from (Ca, Sr) S: Eu, (Sr, Ca, Ba) (Al, Ga) ₂ S ₄ : Eu, (O, N) ₁₆ (Ca _x , M _y ) (Si, Al) ₁₂ (O, N): Eu (e.g., CaAlSiN ₄ : Eu? -SiAlON: Eu) or Ca-? SiAlON: Eu. In this case, M may be selected from among the phosphor components satisfying 0.05 <(x + y) <0.3, 0.02 <x <0.27 and 0.03 <y <0.3, at least one of Eu, Tb, Yb or Er.

The wavelength conversion layer 122 may be separated by the first barrier 121 in the vertical direction with respect to the first, second, and third light emitting portions P1, P2, and P3. The first barrier rib 121 may prevent the light emitted from the first, second, and third light emitting units P1, P2, and P3 from mixing. The first barrier rib 121 may include a light absorbing material such as carbon black or graphite, but may include a reflective material that reflects light. The method of forming the first bank 121 is not particularly limited. For example, the first bank 121 may be formed using photolithography, imprinting, roll-to-roll printing, and ink-jet printing.

As described above, the light of the white (W) wavelength band converted by the wavelength conversion layer 122 is incident on the wavelength conversion layer 122, which is a blue (blue) light component for each of the first, second and third light emitting portions P1, Green (G), and red (R) wavelength band by the red, green, and blue color filters 123a, 123b, and 123c.

1b, in the light emitting device 10 of the embodiment, the active layer 120b of at least one of the first, second, and third light emitting portions P1, P2, and P3, May be different from the active layer 120a of the transistors P1 and P3. For example, the first active layer 120a of the first and third light emitting portions P1 and P3 generates light of a blue (B) wavelength band, and the second active layer 120b of the second light emitting portion P2 Green (G) wavelength band light can be generated. In this case, the red wavelength conversion layer 122R and the red color filter 123c may be disposed only in the region overlapping with the third light emitting portion P3 in the vertical direction. At this time, only the red wavelength conversion layer 122R may be disposed in a region overlapping with the third light emitting portion P3 in the vertical direction. The red wavelength conversion layer 122R can absorb light of a blue (B) wavelength band emitted from the first active layer 120a of the third light emitting portion P3 and convert the light into red (R) wavelength band light.

Therefore, in the light emitting device 10, the first, second, and third light emitting portions P1, P2, and P3 of the light emitting structure 100 emit blue (B), green (G) Light of a wavelength band can be realized.

Referring again to FIG. 1A, the protective layer 170 may cover the side surface and the bottom surface of the light emitting structure 100. The protective layer 170 may include, but is not limited to, resins such as PC, PMMA, and the like. In addition, the protective layer 170 may include at least one of SiO2, Si3N4, TiO2, Al2O3, and MgO, but is not limited thereto.

The protective layer 170 may serve as a light reflecting layer and / or a light absorbing layer, but is not limited thereto. For example, the protective layer 170 may further include a light reflecting particle containing a metal such as Al, Ag or the like to serve as a light reflecting layer. In addition, the protective layer 170 may include carbon black, graphite, or the like to serve as a light absorbing layer.

The first electrode 194 may be electrically connected to the first conductive semiconductor layer 110 through the passivation layer 170. At this time, the first conductive semiconductor layer 110 and the first electrode 194 may be electrically connected through the connection electrode 164. The connection electrode 164 may be disposed between the first conductivity type semiconductor layer 110 and the passivation layer 170. The connection electrode 164 is in direct contact with the first conductivity type semiconductor layer 110 so that the carrier supplied from the first electrode 194 is electrically connected to the first, second, and third light emitting portions P1, P2, 1 conductivity type semiconductor layer 110. In addition,

The connection electrode 164 is connected to the first, second, and third light emitting portions P1, P2, and P3 to easily transfer carriers supplied from the first electrode 194 to the first, And between the portions P1, P2, and P3. For example, as shown in FIG. 1C, the connection electrode 164 may be integrally formed between the first conductive semiconductor layer 110 and the passivation layer 170.

For example, the connection electrode 164 may be a material for the ohmic contact between the first electrode 194 and the first conductive semiconductor layer 110. In this case, the connection electrode 164 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO) (IZO), ZnO, IrOx, RuOx, NiO, and the like, such as Zinc Oxide (IGZO), IGTO (Indium Gallium Tin Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide) Conductive oxide, but is not limited thereto.

The connection electrode 164 may not be formed. In this case, the first electrode 194 directly contacts the first conductive semiconductor layer 110, and the carriers supplied from the first electrode 194 are connected to the first, Can be uniformly transferred to the first conductivity type semiconductor layer 110 of the third light emitting portion P1, P2, P3.

The second electrodes 191, 192 and 193 are respectively connected to the second conductivity type semiconductor layers 130 of the first, second and third light emitting portions P1, P2 and P3, 3 carriers can selectively be transmitted to the light emitting portions P1, P2, and P3.

The second electrodes 191, 192, and 193 may be electrically connected to the plurality of reflective electrodes 161, 162, and 163 through the passivation layer 170. The reflective electrodes 161, 162, and 163 may be disposed between the second electrodes 191, 192, and 193 and the second conductivity type semiconductor layer 130. That is, the reflective electrodes 161, 162, and 163 are disposed in a direction perpendicular to the active layer 120 of the first, second, and third light emitting portions P1, P2, and P3 with the second conductivity type semiconductor layer 130 therebetween. Lt; / RTI &gt;

The reflective electrodes 161, 162 and 163 may reflect the light generated by the first, second, and third light emitting units P1, P2, and P3 toward the first conductivity type semiconductor layer 110. For example, the reflective electrodes 161, 162, and 163 may be formed of materials having high reflectance such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, A transparent conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO may be mixed with a material having a high reflectivity. Further, the reflective electrodes 161, 162, and 163 may be formed as a single layer or a multilayer structure.

The first electrode 194 and the second electrodes 191, 192 and 193 are formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO) Zinc Tin Oxide), IZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide) , IrOx, RuOx, NiO, and the like. The first electrode 194 and the second electrodes 191, 192 and 193 are not limited thereto and may be formed of an opaque metal selected from Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, And may be formed as a single layer or a multi-layer structure.

The light emitting device 10 of the first embodiment as described above can be arranged for each pixel region of the display device. Second, and third light emitting units P1, P2, and P3 when the light emitting device 100 includes the first, second, and third light emitting units P1, P2, and P3, Can independently emit light.

Hereinafter, a display device including a pixel in which the light emitting device of the first embodiment is disposed will be described in detail as follows.

FIG. 2A is a plan view of a display device in which the light emitting devices of FIGS. 1A and 1B are arranged for each pixel region, and FIGS. 2B and 2C are cross-sectional views taken along line I-I 'of FIG. 2A. 2B is a cross-sectional view of the light emitting device of FIG. 1A in a pixel region, and FIG. 2C is a cross-sectional view of the light emitting device of FIG. 1B in a pixel region.

2A and 2B, the display device includes a panel 40 including a plurality of pixel regions defined as regions where the common wiring 41 and the driving wiring 42 cross each other, a light emitting element A first driver 30 for applying a driving signal to the common wiring 41 and a second driver 20 for applying a driving signal to the driving wiring 42; And a controller 50 for controlling the controller 20.

The second barrier ribs 46 disposed on the panel 40 are disposed between the light emitting elements 10 disposed in the respective pixel regions to support the light emitting element 10, the common wiring 41, the drive wiring 42, can do. Therefore, even if the panel 44 becomes large in size, disconnection of the common wiring 41 and the driving wiring 42 can be prevented. The second barrier rib 46 may include a material such as carbon black, graphite or the like to prevent light leakage between adjacent pixel areas, but is not limited thereto.

The common wiring 41 may be electrically connected to the first electrode 194 of the light emitting element 10. The first, second and third driving wirings 43, 44 and 45 are connected to the second electrodes 191, 192 and 193 of the first, second and third light emitting portions P1, P2 and P3, respectively, And can be electrically connected.

Since the first electrode 194 and the second electrodes 191 and 192 and 193 are exposed in the direction in which the second conductivity type semiconductor layer 130 of the light emitting element 10 is disposed with respect to the active layer 120, The wiring 41 and the driving wiring 42 may have a structure in which at least one insulating film is interposed therebetween, but the present invention is not limited thereto. In the embodiment, the first and second insulating films 1a and 1b are shown.

The light emitting element 10 may be disposed for each pixel region of the panel 40. [ The thickness D of the protective layer 170 between the connection electrode 164 and the lower surface of the protective layer 170 may be 20 占 퐉 to 100 占 퐉. At this time, when the thickness D of the protective layer 170 between the connection electrode 164 and the lower surface of the protective layer 170 is thicker than 100 mu m, the thickness of the display device increases. When the thickness D of the protective layer 170 between the connection electrode 164 and the lower surface of the protective layer 170 is thinner than 20 μm, the light emitting structure 100 does not have a sufficient thickness, The light emitting efficiency of the light emitting diode can be lowered.

Therefore, one light emitting element 10 can function as a pixel of the display device. The first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 may function as first, second, and third subpixels. For example, the first light emitting portion P1 may function as a blue subpixel, the second light emitting portion P2 may function as a green subpixel, and the third light emitting portion P3 may function as a red subpixel Function. Accordingly, white light can be realized by mixing the light of the blue, green, and red wavelengths emitted from one light emitting device 10 as described above.

2C, a red wavelength conversion layer 122R and a red color filter 122R are provided only in a region overlapping the third light emitting portion P3 of the first, second, and third light emitting portions P1, P2, and P3 in the vertical direction, The light of the blue (B) wavelength band generated in the third light emitting portion P3 can be converted into the light of the red (R) wavelength band. Accordingly, the first, second, and third light emitting units P1, P2, and P3 can emit light of blue (B), green (G), and red (R) wavelengths, respectively.

Referring again to FIG. 2A, the controller 50 may output a control signal to the first and second drivers 30 and 20 so that power is selectively applied to the common wiring 41 and the driving wiring 42. Accordingly, the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 can be individually controlled.

A typical display device includes a light emitting device package including two or more light emitting devices packaged individually by arranging light emitting elements for each sub pixel of a pixel or by an additional packaging process such as die bonding and wire bonding, As shown in FIG. Therefore, a general display device needs to consider a packaging area, so that the area of an actual light emitting area of the entire area of the panel is narrow and the light emitting efficiency is low.

On the other hand, in the display device of the embodiment, the chip level light emitting element 10 is disposed in the pixel region, and the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 are R, G , B of the first, second, and third sub-pixels. Accordingly, the first, second, and third light emitting units P1, P2, and P3 functioning as the first, second, and third sub-pixels are packaged by an additional process such as die bonding and wire bonding no need. Accordingly, the area for performing wire bonding or the like is removed, and the distance between the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 can be reduced. That is, the pitch interval of the subpixel and the pixel region is reduced, so that the pixel density and resolution of the display device can be improved.

In particular, since the first electrode 194 and the second electrodes 191, 192, and 193 overlap with the light emitting structure 100 in the vertical direction, the semiconductor device of the embodiment does not need to secure the pad region. Accordingly, the luminous efficiency is high, and the interval between the first, second, and third light emitting portions P1, P2, and P3 is reduced as described above, so that the size of the light emitting device 10 can be reduced.

Therefore, the display device of the embodiment including the light emitting element 10 of the embodiment has the SD (Standard Definition) resolution (760x480), HD (High definition) resolution (1180x720), FHD (1920 × 1080), UH (Ultra HD) resolution (3480 × 2160) or UHD or higher resolution (eg 4K (K = 1000), 8K, etc.).

Furthermore, the display device of the embodiment can be applied to an electric signboard or TV with a diagonal size of 100 inches or more. This is because the light emitting device 10 according to the embodiment functions as each pixel as described above, and can have a low power consumption and a long lifetime at a low maintenance cost.

Meanwhile, the first conductivity type semiconductor layers 110 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 may be disposed separately from each other.

3A and 3B are sectional views of a light emitting device according to another structure of the first embodiment.

3A and 3B, the first conductivity type semiconductor layers 110 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 may be disposed separately from each other. At this time, the first conductivity type semiconductor layers 110 of the first, second, and third light emitting portions P1, P2, and P3 may be connected to each other through the connection electrode 164. Since the connection electrode 164 is formed integrally as shown in FIG. 1B, even if the first conductive semiconductor layer 110 of the first, second, and third light emitting portions P1, P2, and P3 are separately arranged, The uniform carrier can be supplied to the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 through the first electrode 194. [

3A, the connection electrode 164 connects the first conductive semiconductor layers 110 of the first, second, and third light emitting portions P1, P2, and P3 to each other, The first conductive semiconductor layer 110 and the first electrode 194 of the first, second, and third light emitting portions P1, P2, and P3 may be electrically connected. 3B, the connection electrode 164 is electrically connected to the first conductive semiconductor layer 110 of the first, second, and third light emitting portions P1, P2, and P3 exposed by the passivation layer 170, Can be disposed on one side.

A part of the connection electrode 164 may be in direct contact with the first electrode 194 and the first conductivity type semiconductor layer 110 of the first, second, and third light emitting portions P1, P2, The carrier injected from the first electrode 194 can be transmitted to the first, second, and third light emitting units P1, P2, and P3 by the unitary connecting electrode 164 that connects the first and second light emitting units.

Therefore, even if the first conductivity type semiconductor layers 110 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 are arranged separately from each other, Second, and third light emitting units P1, P2, and P3 of the light emitting device 10 through the first and second light emitting diodes 41 and 41. The first, second, and third light emitting elements 10 are connected to the first, second, and third light emitting portions P1, P2, and P3, respectively, The driving of the third light emitting portions P1, P2, and P3 can be individually controlled.

4A to 4G are cross-sectional views illustrating a method of manufacturing the light emitting device of FIG. 1A.

4A, a light emitting structure 100 including a first conductivity type semiconductor layer 110, an active layer 120, and a second conductivity type semiconductor layer 130 is formed on a substrate 1, The reflective electrodes 161, 162, and 163 disposed on the second conductivity type semiconductor layer 130 may be formed for each of the first, second, and third light emitting portions P1, P2, and P3 of the first conductivity type semiconductor layer 100.

The substrate 1 may be formed of a material selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.

Although not shown, a buffer layer (not shown) may be further provided between the first conductivity type semiconductor layer 110 and the substrate 1. The buffer layer may mitigate lattice mismatch between the first conductivity type semiconductor layer 110, the active layer 120, and the second conductivity type semiconductor layer 130 and the substrate 1. The buffer layer may be a combination of Group III and Group V elements or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer may be doped with a dopant, but is not limited thereto.

The first conductive semiconductor layer 110, the active layer 120 and the second conductive semiconductor layer 130 may be formed by a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), sputtering, or the like But is not limited thereto.

The reflective electrodes 161, 162 and 163 may be formed of a material having a high reflectance such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, And transparent conductive materials such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO may be mixed and formed. The method of forming the reflective electrodes 161, 162, and 163 can be selected from among commonly used electrode forming methods such as sputtering, coating, vapor deposition, and the like.

The first conductivity type semiconductor layer 110, the active layer 120, and the second conductivity type semiconductor layer 130 are formed on the mesa surface of the first conductivity type semiconductor layer 110. The first, second, and third light emitting portions P1, May be an etched structure. A portion of the first conductivity type semiconductor layer 110, the active layer 120 and the second conductivity type semiconductor layer 130 may be etched by mesa etching and the reflective electrodes 161, 162, 2, and the third light emitting units P1, P2, and P3.

The first conductivity type semiconductor layer 110 is formed on the first conductivity type semiconductor layer 110. The first conductivity type semiconductor layer 110 includes a first conductivity type semiconductor layer 110, The second conductive semiconductor layer 130 and the reflective electrodes 161, 162, and 163 are separated by the first, second, and third light emitting portions P1, P2, and P3.

As shown in FIG. 4B, the connection electrode 164 may be formed on a region where a part of the first conductive semiconductor layer 110 is etched. The connection electrode 164 may also be formed on the first conductive semiconductor layer 110 between the first, second, and third light emitting portions P1, P2, and P3. The first conductive semiconductor layer 110, The connection electrodes 164 disposed on the substrate 110 may be integrated as shown in FIG.

A protective layer 170 is formed on the substrate 1 so as to cover the connection electrode 164, the light emitting structure 100, and the reflective electrodes 161, 162, and 163. The protective layer 170 is selectively removed so that the first, second, and third reflective electrodes 161, 162, and 163 disposed on the first, second, and third light emitting portions P1, P2, And a through hole 171 exposing a part of the connection electrode 164 are formed. The depth of the through hole 171 for exposing the connection electrode 164 and the depth of the through hole 171 for exposing the first, second and third reflective electrodes 161, 162 and 163 may be different.

Second and third reflective electrodes 161, 162, and 163 of the first, second, and third light emitting units P1, P2, and P3 through the through holes 171, respectively, The second electrodes 191, 192, and 193 are formed. The first electrode 194, which is in contact with the connection electrode 164, may be formed.

The first electrode 194 may be in electrical contact with the connection electrode 164 disposed on the first conductivity type semiconductor layer 110 and the first, second, and third light emitting portions P1, P2, The first conductive semiconductor layer 110 may be electrically connected to the first electrode 194. The second electrodes 191, 192 and 193 are connected to the first, second and third reflective electrodes 161, 162 and 163 of the first, second and third light emitting units P1, P2 and P3, Can be contacted.

Therefore, in the light emitting device of the embodiment, the first electrode 194 is electrically connected to the common wiring 41 of the panel (40 in Fig. 2A), and the first, second, and third light emitting portions P1, P2 And P3 and the second electrodes 191, 192 and 193 which are in contact with the second conductivity type semiconductor layer 130 of the first, second and third light emitting portions P1, P2 and P3 Second and third light emitting portions P1, P2, and P3 by controlling the driving wiring 42 to be electrically connected to the driving wiring 42 of the panel (40 in Fig. 2A) .

A supporting pad 400 including a photoresist layer 410 and a supporting layer 430 is formed on the entire surface of the substrate 1 so as to cover the second electrodes 191, 192 and 193 and the first electrode 194, The substrate 1 can be removed. The method of removing the substrate 1 is not particularly limited. For example, the substrate 1 may be removed using a Laser Lift Off (LLO) technique.

The support pad 400 may be removed from the light emitting structure 100, as shown in FIG. For example, the photoresist layer 410 may be removed by dipping in a stripper solution. The stripper solution may contain a variety of organic and inorganic solvents that can dissolve the photoresist. Removing the photoresist layer 410 can separate the support layer 430 from the light emitting structure 100.

4G, the first barrier rib 121, the wavelength conversion layer 122, and the color filters 123a, 123b, and 123c are arranged in a direction in which light generated in the active layer 120 of the light emitting structure 100 is emitted . Thus, the chip-level light emitting device 10 including the first, second, and third light emitting portions P1, P2, and P3 can be formed.

The light emitting device 10 may include a wavelength conversion layer 122 disposed in a direction in which light emitted from the blue wavelength band generated by the active layer 120 of the light emitting structure 100 is emitted, Light of blue (B), green (G), and red (R) wavelength band can be implemented for each of the first, second, and third light emitting portions P1, P2, and P3 through the filters 123a, 123b, and 123c. Although not shown, the wavelength conversion layer 122 and the blue color filter 123a are removed from the first light emitting portion P1 and the blue (B) wavelength band generated from the active layer 120 of the third light emitting portion P3 Can be emitted as it is.

The above-described display device uses a chip-level light emitting device 10 including the first, second, and third light emitting portions P1, P2, and P3 as pixels, and thus does not require a wire, Can be omitted. Therefore, it is possible to prevent optical interference due to the wire.

Even if the first conductivity type semiconductor layers 110 of the first, second and third light emitting portions P1, P2 and P3 are separated from each other, the second electrodes 191, 192 and 193 and the first electrode 194 The light emitting structure 100 may be supported through the passivation layer 170 formed thereon. Therefore, by removing the substrate 1 from the light emitting structure 100, absorption of light by the substrate 1 can be prevented.

4H and 4I are process sectional views showing a method of manufacturing the light emitting device of FIG. 3A.

The method of forming the light emitting device 10 as shown in FIG. 3A, in which the first conductivity type semiconductor layers 110 of the first, second, and third light emitting portions P1, P2, and P3 are separately arranged, After performing the steps of Figs. 4A to 4E, the steps of Figs. 4H and 4I may be further performed. 4A, when the first conductivity type semiconductor layer 110, the active layer 120, and the second conductivity type semiconductor layer 130 are mesa-etched, the first, second, and third light emission The first conductivity type semiconductor layer 110 is removed to expose the upper surface of the substrate 1 between the first, second and third light emitting portions P1, P2, and P3, The first conductive semiconductor layer 110 may be disposed separately.

First, as shown in FIG. 4H, the substrate (1 in FIG. 4E) is separated and further exposed to remove the first conductive type semiconductor layer 110. At this time, the first conductivity type semiconductor layer 110 may be removed so that the first conductivity type semiconductor layers 110 of the first, second, and third light emitting portions P1, P2, and P3 are separately disposed. 4I, the support pad 400 is removed from the light emitting structure 100 and the first partition 121, the wavelength conversion layer 122, and the blue, green, and red color filters 123a, 123b, and 123c are arranged . Thus, the chip-level light emitting device 10 including the first, second, and third light emitting portions P1, P2, and P3 can be formed.

The display device using the chip-level light-emitting device 10 as a pixel can realize a large-sized display device having a high pixel density and a higher resolution than the liquid-crystal display device and the organic field display device of the same size.

FIGS. 5A to 5F are cross-sectional views illustrating a method of manufacturing the light emitting structure of FIG. 1B.

The first light emitting portion P1 and the third light emitting portion P3 include the same first active layer 120a and the second light emitting portion P2 includes the second active layer 120a and the second active layer 120b, A step of forming a light emitting structure 100 on the substrate 1 and a step of etching a part of the region of the light emitting structure 100 and a step of etching the light emitting structure 100 to a part of the etched region, Growth step.

5A, a first conductive semiconductor layer 110, a first active layer 120a, and a second conductive semiconductor layer 130 are sequentially formed on a substrate 1 to form a light emitting structure 100 . Then, as shown in FIG. 5B, the first mask 2 can be disposed on the upper surface of the light emitting structure 100. The first mask 2 may expose a portion of the second conductivity type semiconductor layer 130 of the second light emitting portion P3 of the light emitting structure 100. [ The first region 3 exposed by the first mask 2 may be a region for forming the light emitting structure 100 including the second active layer 120b different from the first active layer 120a .

5C, the first conductive semiconductor layer 110, the first active layer 120a, and the second conductive semiconductor layer 130 in the region exposed by the first mask 2 are removed, The first conductive semiconductor layer 110 is exposed on the lower surface and the first conductive semiconductor layer 110, the first active layer 120a and the second conductive semiconductor layer 130 are exposed from the side surface 3a can be formed. Then, as shown in Fig. 5D, the second mask 2a can be disposed so as to cover the side surface of the groove 3a. The second mask 2a may be for preventing the damage of the light emitting structure 100 by a subsequent process.

Next, as shown in FIG. 5E, the first conductivity type semiconductor layer 110 is grown on the first conductive type semiconductor layer 110 exposed from the bottom surface of the groove 3a. The re-grown first conductive semiconductor layer 110 may have a physical interface with the first conductive semiconductor layer 110 before being etched, but the present invention is not limited thereto and the interface may disappear due to re-growth . The second active layer 120b may be formed on the re-grown first conductivity type semiconductor layer 110 and the second conductivity type semiconductor layer 130 may be grown on the second active layer 120b. For example, the second active layer 122 may emit light of a green (G) wavelength band, and the first active layer 120a may emit light of a blue (B) wavelength band.

5f, the first and second masks 2 and 2a are removed to form a first light emitting portion P1 and a third light emitting portion P3 including the same first active layer 120a, The light emitting structure 100 including the second light emitting portion P2 including the second active layer 120b different from the first active layer 120a may be formed. The reflective electrodes 161, 162, and 163 may be formed on the light emitting structure 100 for each of the first, second, and third light emitting units P1, P2, and P3.

The subsequent steps are the same as those in Figs. 4B to 4F, and description thereof may be omitted. 1B, the red wavelength conversion layer 122R and the red color filter 123c may be disposed on the light emitting structure 100 only in a region overlapping the second light emitting portion P2 in the vertical direction. At this time, only the red wavelength conversion layer 122R may be disposed, and the color characteristics of light of the red wavelength band implemented by arranging both the red wavelength conversion layer 122R and the red color filter 123c may be improved have.

Hereinafter, the light emitting device of the second embodiment will be described in detail.

6A and 6B are cross-sectional views of the light emitting device of the second embodiment.

6A, the light emitting device 10 of the second embodiment includes a light emitting structure 200 including first, second, and third light emitting portions P1, P2, and P3, and first, second, A protective layer 270 covering the light emitting portions P1, P2 and P3, a first electrode 294 electrically connected to the first conductivity type semiconductor layer 210 of the light emitting structure 200, And a plurality of second electrodes 291, 292, and 293 that are electrically connected to the second conductivity type semiconductor layer 230 of the first, second, and third light emitting portions P1, P2, and P3, have.

The light emitting device 10 is a vertical type and the first electrode 294 and the second electrodes 291 and 292 and 293 may be disposed in opposite directions to each other with the light emitting structure 200 interposed therebetween. The light emitting structure 200 includes the second conductive semiconductor layer 230, the active layer 220 and the first conductive semiconductor layer 210 in this order on the second conductive semiconductor layer 230, And the first conductive semiconductor layer 210 is disposed on the active layer 220. The first electrode 294 is disposed on the first conductivity type semiconductor layer 210 so that the first electrode 294 overlaps the active layer 220 in the vertical direction with the first conductivity type semiconductor layer 210 therebetween And the second electrodes 291, 292 and 293 are arranged to overlap with the active layer 220 in the vertical direction with the second conductivity type semiconductor layer 230 interposed therebetween.

The light emitting structure 200 is disposed on the first conductivity type semiconductor layer 210 and the first conductivity type semiconductor layer 210 and is disposed on the first, second, and third light emitting portions P1, P2, and P3, And a second conductivity type semiconductor layer 230 which is vertically overlapped with the first conductivity type semiconductor layer 210 with the active layer 220 and the active layer 220 interposed therebetween. The first, second, and third light emitting portions P1, P2, and P3 share the first conductive semiconductor layer 210, and the first, second, and third light emitting portions P1, P2, 1 &lt; / RTI &gt;

The first, second, and third light emitting portions P1, P2, and P3 of the light emitting structure 200 may emit light of the same color. For example, the first, second, and third light emitting portions P1, P2, and P3 of the light emitting structure 200 may emit blue (B) light.

In the light emitting device 10, the first electrode 294, which is in contact with the first conductivity type semiconductor layer 210, is disposed in a direction in which light of a blue (B) wavelength band generated in the active layer 220 is emitted. When the color filter and the wavelength conversion layer are directly disposed on the first electrode 294, the first electrode 294 can not be brought into electrical contact with the common wiring of the panel to be described later. Therefore, after the light emitting element 10 is mounted on the panel, the color filter and the wavelength conversion layer can be disposed on the common wiring.

6B, the first light emitting portion P1 and the third light emitting portion P3 include the same first active layer 220a and the second light emitting portion P2 includes the first active layer 220a and the second active layer 220b, And a second active layer 220b. At this time, the first active layer 220a may generate light of a blue (B) wavelength band, and the second active layer 220b may generate light of a green (G) wavelength band.

The first, second, and third light emitting portions P1, P2, and P3 of the light emitting structure 200 are disposed on the panel of the display device, and the first, second, and third light emitting portions P1, Light of blue (B), green (G), and red (R) wavelength band can be realized.

Referring again to FIG. 6A, the first electrode 294 may be in direct contact with the first conductive semiconductor layer 210 of the light emitting structure 200 exposed by the passivation layer 270. For example, the passivation layer 270 may expose the first conductive semiconductor layer 210 of the light emitting structure 200. The first conductive semiconductor layer 210 of the first, second, and third light emitting portions P1, P2, and P3 is electrically connected to one of the first electrodes 294, The power signal may be applied to the first, second, and third light emitting units P1, P2, and P3. 6A, the first electrode 294 is disposed only on the upper surface of the first conductive semiconductor layer 210, but the first electrode 294 is not limited to the upper surface of the first conductive semiconductor layer 210, .

The second electrodes 291, 292 and 293 may be electrically connected to the second conductivity type semiconductor layer 230 of the first, second and third light emitting portions P1, P2 and P3, respectively. For example, between the second electrodes 291, 292 and 293 and the second conductivity type semiconductor layer 230 of the first, second and third light emitting portions P1, P2 and P3, reflection electrodes 261 and 262 The second electrodes 291, 292 and 293 are arranged on the first and second light emitting units P1, P2 and P3 through the reflective electrodes 261, 262 and 263, Type semiconductor layer 230, as shown in FIG. The reflective electrodes 261, 262 and 263 can reflect light generated in the first, second and third light emitting portions P1, P2 and P3 toward the first conductivity type semiconductor layer 210. [

In the light emitting device 10 of the second embodiment as described above, a power supply signal is applied from the first electrode 294 to the first, second, and third light emitting portions P1, P2, and P3, and the second electrodes 291, Second, and third light emitting units P1, P2, and P3 may be selectively driven to emit light through the first, second, and third light emitting units 292 and 293.

Hereinafter, a display device including pixels having the light emitting device 10 of the second embodiment will be described in detail.

Fig. 7A is a plan view of a display device in which light emitting elements of the second embodiment are arranged for each pixel region, and Figs. 7B and 7C are sectional views of I-I 'of Fig. 7B is a cross-sectional view of the light emitting device of FIG. 6A in the pixel region, and FIG. 7C is a cross-sectional view of the light emitting device of FIG. 6B in the pixel region.

7A and 7B, the display device includes a panel 40 including a plurality of pixel regions defined as regions where the common wiring 41 and the driving wiring 42 cross each other, a light emitting element A first driver 30 for applying a driving signal to the common wiring 41 and a second driver 20 for applying a driving signal to the driving wiring 42; And a controller 50 for controlling the controller 20.

The second barrier ribs 46 disposed on the panel 40 are disposed between the light emitting elements 10 disposed in the respective pixel regions to support the light emitting element 10, the common wiring 41, the drive wiring 42, can do. Therefore, even if the panel 44 becomes large in size, disconnection of the common wiring 41 and the driving wiring 42 can be prevented. The second barrier rib 46 may include a material such as carbon black, graphite or the like to prevent light leakage between adjacent pixel areas, but is not limited thereto. Furthermore, even if the wavelength conversion layer 222 and the blue, green, and red color filters 223a, 223b, and 223c are disposed between the common wiring 41, the second barrier ribs 46 disposed between the adjacent light- It is possible to sufficiently support the wavelength conversion layer 222 and the blue, green, and red color filters 223a, 223b, and 223c.

The common wiring 41 may be electrically connected to the first electrode 294 of the light emitting element 10. The first, second and third driving wirings 43, 44 and 45 are connected to the second electrodes 291, 292 and 293 of the first, second and third light emitting portions P1, P2 and P3, respectively, Can be connected. Since the first electrode 294 and the second electrodes 291 and 292 and 293 are disposed opposite to each other with respect to the active layers 220a and 220b, Second, and third light emitting portions P1, P2, and P3 at a lower portion of the light emitting element 10, and the first, second, and third driving wirings 43, 44, 45, and 42 are electrically connected to the first, P2, and P3, respectively. Therefore, interference between the common wiring 41 and the driving wiring 42 can be effectively prevented.

The display device can output a control signal to the first and second drivers 30 and 20 so that the controller 50 selectively applies power to the common wiring 41 and the driving wiring 42. [ Accordingly, the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 can be individually controlled.

For example, power is supplied to the first, second and third light emitting portions P1, P2 and P3 of the light emitting element 10 through the common wiring 41, and the first, The first, second, and third light emitting units P1, P2, and P3 may selectively emit light by controlling the light emitting diodes 43, 44, 45,

The wavelength conversion layer (light-emitting layer) is formed so as to overlap the first, second and third light emitting portions P1, P2, and P3 of the light emitting element 10 in the vertical direction with the common wiring 41 interposed therebetween, 222, and blue, green, and red color filters 223a, 223b, and 223c. The wavelength conversion layer 222 may include a material for converting light of a blue wavelength band emitted from the first, second, and third light emitting portions P1, P2, and P3 into light of a white wavelength band.

The wavelength conversion layer 222 may be separated by the first barrier ribs 221 in the regions overlapping the first, second, and third light emitting portions P1, P2, and P3 in the vertical direction. The first barrier ribs 221 can prevent color mixture of light emitted from the first, second, and third light emitting portions P1, P2, and P3. The first barrier rib 221 may include a light absorbing material such as carbon black or graphite, but may also include a reflective material that reflects light. The method of forming the first bank 221 is not particularly limited. For example, the first bank 221 may be formed using photolithography, imprinting, roll-to-roll printing, and ink-jet printing.

As described above, the light of the white wavelength band converted by the wavelength conversion layer 222 is converted into blue, green, and blue light, which are arranged on the wavelength conversion layer 222 for each of the first, second, and third light emitting portions P1, P2, Light of blue (B), green (G), and red (R) wavelength band can be realized by the red color filters 223a, 223b, and 223c.

On the other hand, as shown in FIG. 7C, the third light emitting portion P3 and the third light emitting portion P3 of the first, second, and third light emitting portions P1, P2, and P3 are formed on the light emitting structure 200 with the common wiring 41 therebetween. The red wavelength conversion layer 222R and the red color filter 223c are disposed only in the region overlapping the red (R) wavelength band and the blue (B) wavelength band generated in the third emitting portion P3 is converted into the red can do. Accordingly, the first, second, and third light emitting units P1, P2, and P3 can emit light of blue (B), green (G), and red (R) wavelengths, respectively.

Meanwhile, the first conductivity type semiconductor layer 110 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 may be separately arranged. At this time, the first conductivity type semiconductor layer 110 of the first, second, and third light emitting portions P1, P2, and P3 is separated by separating the substrate during the manufacturing process of the light emitting element 10, 1 conductivity type semiconductor layer 110 may be further removed.

8A and 8B are sectional views of a light emitting device according to another structure of the second embodiment.

8A and 8B, the first conductivity type semiconductor layers 210 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting device 10 of the second embodiment are arranged separately from each other Lt; / RTI &gt;

The first conductivity type semiconductor layer 210 of the first, second, and third light emitting portions P1, P2, and P3 is further removed to form the first, second, and third light emitting portions P1, P2, The first, second, and third light emitting portions 210 and 220 separated from each other through the passivation layer 270 disposed to surround the side surface and the lower surface of the light emitting structure 200, The light emitting structure 200 including the light emitting structures P1, P2, and P3 may be supported.

8A, the first conductive semiconductor layer 210 of the first, second, and third light emitting portions P1, P2, and P3 may be connected to one first electrode 294, The first, second and third light emitting portions P1, P2 and P3 are arranged on the first conductivity type semiconductor layer 210 of the first, second and third light emitting portions P1, P2 and P3. The first electrodes 294 that are in contact with the first conductivity type semiconductor layer 210 may be disposed separately from each other. The first electrode 294 is disposed only on the upper surface of the first conductive semiconductor layer 210 of the first, second, and third light emitting portions P1, P2, and P3, but not limited thereto The first electrode 294 may also be disposed in one region of the passivation layer 270. 8B, the first electrodes 294 disposed on the first conductive type semiconductor layer 210 of the first, second, and third light emitting portions P1, P2, and P3 are connected to one common wiring (Not shown).

Accordingly, power can be applied to the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 through one common wiring line (41 of FIG. 7A) The first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 are connected to the first, second, and third light emitting portions P1, P2, and P3, respectively, P2, and P3 can be individually controlled.

9A to 9F are cross-sectional views showing the manufacturing method of the light emitting device of FIG. 6A.

9A, a light emitting structure 200 including a first conductivity type semiconductor layer 210, an active layer 220, and a second conductivity type semiconductor layer 230 is formed on a substrate 1, 262, and 263 may be formed on the second conductivity type semiconductor layer 230 for each of the first, second, and third light emitting portions P1, P2, and P3 of the first conductivity type semiconductor layer 200.

The first, second and third light emitting portions P1, P2 and P3 of the light emitting structure 200 are electrically connected to the first conductive semiconductor layer 210, the active layer 220 and the second conductive semiconductor layer 230 ) May be a mesa-etched structure. A part of the first conductivity type semiconductor layer 210, the active layer 220 and the second conductivity type semiconductor layer 230 may be etched by mesa etching and the reflective electrodes 261, 262, 2, and the third light emitting units P1, P2, and P3.

The first conductivity type semiconductor layer 210 and the first conductivity type semiconductor layer 210 are formed on the first conductivity type semiconductor layer 210. The first conductivity type semiconductor layer 210 may include a first conductivity type semiconductor layer 210, The second conductivity type semiconductor layer 230 and the reflective electrodes 261, 262 and 263 are separated by the first, second and third light emitting portions P1, P2 and P3.

9B, a protective layer 270 is formed on the substrate 1 so as to cover the light emitting structure 200, the reflective electrodes 261, 262 and 263, and the protective layer 270 is selectively removed, Second, and third reflective electrodes 261, 262, and 263 disposed in the first, second, and third light emitting units P1, P2, and P3, respectively, .

The first, second, and third reflective electrodes (P1, P2, and P3) of the first, second, and third light emitting portions P1, P2, and P3 exposed by the through holes 271 on the passivation layer 270 The second electrodes 291, 292, and 293 may be formed in contact with the first electrodes 261, 262, and 263, respectively. That is, the second electrodes 291, 292, and 293 may be connected to the second conductivity type semiconductor layer 230 of the first, second, and third light emitting portions P1, P2, and P3, respectively.

A supporting pad 400 including a photoresist layer 410 and a supporting layer 430 is formed on the entire surface of the substrate 1 so as to cover the second electrodes 291, 292 and 293 and the protective layer 270, . Then, the substrate 1 can be removed from the light emitting structure 200 as shown in Fig. 9E. The method of removing the substrate 1 is not particularly limited. For example, the substrate 1 may be removed using a Laser Lift Off (LLO) technique.

Although not shown, after the substrate 1 is separated from the light emitting structure 200, the first conductive semiconductor layer 210, from which the substrate 1 is separated and exposed, is further removed, Similarly, the first conductivity type semiconductor layers 210 of the first, second, and third light emitting portions P1, P2, and P3 may be separated from each other.

9A, when the first conductivity type semiconductor layer 210, the active layer 220, and the second conductivity type semiconductor layer 230 are mesa-etched, the first, second, and third light emission The first conductive semiconductor layer 210 is removed to expose the upper surface of the substrate 1 between the first, second and third light emitting portions P1, P2, and P3, The first conductive semiconductor layer 210 may be disposed separately.

9F, the first electrode 294 may be formed on the first conductive semiconductor layer 210 of the light emitting structure 200 in which the substrate 1 is removed. Then, the support pad 400 can be removed from the light emitting structure 200. For example, the photoresist layer 410 may be removed by dipping in a stripper solution. The stripper solution may contain a variety of organic and inorganic solvents that can dissolve the photoresist. Removing the photoresist layer 410 may remove the support layer 430 from the light emitting structure 200. Thus, the chip-level light emitting device 10 including the first, second, and third light emitting portions P1, P2, and P3 can be formed.

Hereinafter, the light emitting device of the third embodiment will be described in detail.

10A and 10B are sectional views of a light emitting device of a third embodiment.

10A, the light emitting device 10 of the third embodiment includes a light emitting structure 300 including first, second, and third light emitting portions P1, P2, and P3, A first electrode 394 that is electrically connected to the first conductive semiconductor layer 310 of the light emitting structure 300 through the passivation layer 370 and the passivation layer 370 and a second electrode 394 that is electrically connected to the upper surface of the light emitting structure 300 And a plurality of second electrodes 361, 362, and 363 electrically connected to the second conductive type semiconductor layer 330 of the exposed first, second, and third light emitting portions P1, P2, and P3. have.

The first electrode 394 and the second electrodes 361 and 362 and 363 may be disposed in opposite directions to each other with the light emitting structure 200 interposed therebetween.

The light emitting structure 300 includes a first conductivity type semiconductor layer 310, an active layer 320 and a second conductivity type semiconductor layer 320 which are sequentially stacked to form an active layer 320 on the first conductivity type semiconductor layer 310, And the second conductivity type semiconductor layer 330 may be disposed on the active layer 220.

The active layer 320 may be disposed on the first conductivity type semiconductor layer 310 and may be disposed on the first, second, and third light emitting portions P1, P2, and P3, respectively. The second conductive semiconductor layer 330 may overlap the first conductive semiconductor layer 310 in the vertical direction with the active layer 320 interposed therebetween. The first, second, and third light emitting portions P1, P2, and P3 share the first conductive type semiconductor layer 310, and the first, second, and third light emitting portions P1, 1 &lt; / RTI &gt;

The first, second, and third light emitting units P1, P2, and P3 of the light emitting structure 300 may emit light of the same color. For example, the first, second, and third light emitting portions P1, P2, and P3 of the light emitting structure 300 may emit blue light.

10B, the first light emitting portion P1 and the third light emitting portion P3 include the same first active layer 320a, and the second light emitting portion P2 includes the first active layer 320a and the second active layer 320b, And a second active layer 320b. In this case, the first active layer 320a may generate light of a blue (B) wavelength band, and the second active layer 320b may generate light of a green (G) wavelength band.

The first, second, and third light emitting portions P1, P2, and P3 of the light emitting structure 300 are disposed on the panel of the display device, and the first, second, and third light emitting portions P1, Light of blue (B), green (G), and red (R) wavelength band can be realized.

Referring again to FIG. 10A, the first electrode 394 may be electrically connected to the light emitting structure 300 through the protective layer 370. A reflective electrode 350 may be disposed between the protective layer 370 and the light emitting structure 300. The protective layer 370 may include a through hole 371 exposing the reflective electrode 350, The reflective electrode 350 exposed by the first electrode 371 and the first electrode 394 can be in electrical contact with each other. The reflective electrode 350 may reflect the light generated in the first, second, and third light emitting units P1, P2, and P3 toward the second conductivity type semiconductor layer 310. The reflective electrode 350 is disposed on only the surface of the passivation layer 370 and the first conductive type semiconductor layer 310 that are in contact with each other and the reflective electrode 350 is not limited to the passivation layer 370, But it is not limited thereto.

The second electrodes 361, 362 and 363 are disposed on the second conductivity type semiconductor layer 310 of the first, second and third light emitting portions P1, P2 and P3, 310, respectively. The second electrodes 361, 362 and 363 are arranged such that light emitted from the first, second and third light emitting portions P1, P2 and P3 is emitted in the direction in which the blue, green and red color filters 323a, 323b and 323c are arranged Lt; RTI ID = 0.0 &gt; a &lt; / RTI &gt; For example, the second electrodes 361, 362 and 363 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO) oxide, IGTO, aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO, Ga ZnO), and the like, but is not limited thereto.

Hereinafter, a display device including pixels having the light emitting device of the third embodiment will be described in detail.

11A is a plan view of a display device in which the light emitting elements of the third embodiment are arranged for each pixel region, and Figs. 11B and 11C are sectional views of I-I 'of Fig. 11A. 11B is a sectional view of the light emitting device of FIG. 10A in the pixel region, and FIG. 11C is a sectional view of the light emitting device of FIG. 10A in the pixel region.

11A and 11B, the display device includes a panel 40 including a plurality of pixel regions defined as regions where the common wiring 41 and the driving wiring 42 cross each other, a light emitting element A first driver 30 for applying a driving signal to the common wiring 41 and a second driver 20 for applying a driving signal to the driving wiring 42; And a controller 50 for controlling the controller 20.

The second barrier ribs 46 disposed on the panel 40 are disposed between the light emitting elements 10 disposed in the respective pixel regions to support the light emitting element 10, the common wiring 41, the drive wiring 42, can do. Therefore, even if the panel 44 becomes large in size, disconnection of the common wiring 41 and the driving wiring 42 can be prevented. The second barrier rib 46 may include a material such as carbon black, graphite or the like to prevent light leakage between adjacent pixel areas, but is not limited thereto.

The common wiring 41 may be electrically connected to the first electrode 394 of the light emitting element 10. The first, second and third driving wirings 43, 44 and 45 are connected to the second electrodes 391, 392 and 393 of the first, second and third light emitting portions P1, P2 and P3, respectively, Can be connected. Since the first electrode 394 and the second electrodes 391 and 392 and 393 are disposed opposite to each other with respect to the active layers 320a and 320b, Second, and third light emitting units P1, P2, and P3 at a lower portion of the light emitting device 10. The first, second, and third driving wirings 43, 44, 45, and 42 are electrically connected to the first, P2, and P3, respectively, of the first and second electrodes 391, 392, and 393, respectively. Therefore, interference between the common wiring 41 and the driving wiring 42 can be effectively prevented.

The display device can output a control signal to the first and second drivers 30 and 20 so that the controller 50 selectively applies power to the common wiring 41 and the driving wiring 42. [ Accordingly, the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 can be individually controlled. For example, power is supplied to the first, second and third light emitting portions P1, P2 and P3 of the light emitting element 10 through the common wiring 41, and the first, The first, second, and third light emitting units P1, P2, and P3 may selectively emit light by controlling the light emitting diodes 43, 44, 45;

The first, second and third light emitting portions P1, P2 (P2, P2) of the light emitting element 10 are arranged on the light emitting structure 300 with the first, second and third drive wirings 43, Green, and red color filters 323a, 323b, and 223c may be disposed so as to overlap with the first, The wavelength conversion layer 322 may include a material for converting light of a blue wavelength band emitted from the first, second, and third light emitting portions P1, P2, and P3 into light of a white wavelength band.

The wavelength conversion layer 322 may be separated by the first barrier rib 321 in the vertical direction with respect to the first, second, and third light emitting portions P1, P2, and P3. The first barrier rib 321 can prevent the light emitted from the first, second, and third light emitting portions P1, P2, and P3 from mixing. The first barrier rib 321 may include a light absorbing material such as carbon black or graphite, but may also include a reflective material that reflects light. The method of forming the first bank 321 is not particularly limited. For example, the first bank 321 may be formed using photolithography, imprinting, roll-to-roll printing, and ink-jet printing.

The light of the white wavelength band converted by the wavelength conversion layer 322 is incident on the wavelength conversion layer 322 in the order of blue, green, and blue arranged for the first, second, and third light emitting portions P1, P2, and P3, The blue (B), green (G), and red (R) wavelength ranges can be realized by the red color filters 323a, 323b, and 323c.

11C, the third light emitting portion P3 of the first, second, and third light emitting portions P1, P2, and P3, and the third light emitting portion P3 of the light emitting structure 300, The red wavelength conversion layer 322R and the red color filter 323c are disposed only in the region overlapping the red (R) wavelength band and the blue (B) wavelength band generated in the third light emitting portion P3 can do. Accordingly, the first, second, and third light emitting units P1, P2, and P3 can emit light of blue (B), green (G), and red (R) wavelengths, respectively.

Meanwhile, the first conductivity type semiconductor layer 310 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 may be separately disposed. In this case, the first conductivity type semiconductor layer 310 of the first, second, and third light emitting portions P1, P2, and P3 may be separated during the manufacturing process of the light emitting device 10, 1 conductivity type semiconductor layer 310 may be further removed.

12A to 12C are sectional views of a light emitting device according to another structure of the third embodiment.

12A to 12C, the first conductivity type semiconductor layers 310 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting device 10 of the third embodiment are arranged separately from each other . Even if the first conductivity type semiconductor layers 310 of the first, second, and third light emitting portions P1, P2, and P3 are disposed separately from each other, Second, and third light emitting units P1, P2, and P3 may be supported.

12A, the light emitting structure 300 and the first electrode 394 are electrically connected to the first conductive semiconductor layer 310 of the first, second, and third light emitting portions P1, P2, and P3 and the protective layer 370 Through the reflective electrode 350 disposed on the reflective electrode 350. 12B, the reflective electrode 350 may be separated as the first conductive semiconductor layer 310 of the first, second, and third light emitting units P1, P2, and P3. In this case, the reflective electrode 350, which is in contact with the first conductive type semiconductor layer 310 of the first, second, and third light emitting portions P1, P2, and P3, is electrically connected to the first electrode 394 .

In addition, as shown in FIG. 12C, the first electrode 394 may be separately disposed so as to be in contact with the first, second, and third light emitting portions P1, P2, and P3, respectively. In this case, the first electrode 394 may be connected to the reflective electrode 350 of the first, second, and third light emitting portions P1, P2, and P3 exposed at the lower surface of the light emitting structure 300 . The first electrodes 394 of the first, second, and third light emitting portions P1, P2, and P3 are connected to one common wiring 41 (not shown) even if the first electrode 394 is disposed separately as shown in FIG. Can be connected.

Therefore, even if the first conductivity type semiconductor layers 310 of the first, second, and third light emitting portions P1, P2, and P3 are separately arranged, a single common wiring (not shown) Second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 through the first and second light emitting elements 10 (41 in FIG. 10A) Second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 through the driving wiring (42 in FIG. 10A) connected to the third light emitting portions P1, P2, Can be individually controlled.

13A to 13F are process sectional views showing a method of manufacturing the light emitting device of the third embodiment.

13A, a light emitting structure 300 including a first conductivity type semiconductor layer 310, an active layer 320, and a second conductivity type semiconductor layer 330 is formed on a substrate 1, The reflection electrodes 361, 362, and 363 may be formed on the second conductivity type semiconductor layer 330 for each of the first, second, and third light emitting portions P1, P2, and P3 of the first conductivity type semiconductor layer 300.

The first, second and third light emitting portions P1, P2 and P3 of the light emitting structure 300 are electrically connected to the first conductive semiconductor layer 310, the active layer 320 and the second conductive semiconductor layer 330 ) May be a mesa-etched structure. A portion of the first conductivity type semiconductor layer 310, the active layer 320 and the second conductivity type semiconductor layer 330 may be etched by mesa etching and the reflective electrodes 361, 362, 2, and the third light emitting units P1, P2, and P3.

The first conductivity type semiconductor layer 310 may include a first conductivity type semiconductor layer 310 and a first conductivity type semiconductor layer 310. The first conductivity type semiconductor layer 310 may include a first conductivity type semiconductor layer 310, The second conductive semiconductor layer 330 and the reflective electrodes 361, 362 and 363 are separated by the first, second and third light emitting portions P1, P2 and P3.

13B, a photoresist layer 410 and a supporting layer 430 including a supporting layer 430 are formed on the entire surface of the substrate 1 so as to cover the second electrodes 361, 362, and 363 and the light emitting structure 300. Next, And then the substrate 1 can be separated from the light emitting structure 300. The method of separating the substrate 1 is not particularly limited. For example, the substrate 1 may be separated from the light emitting structure 300 using a laser lift off (LLO) technique.

Although not shown, after the substrate 1 is separated from the light emitting structure 300, the first conductivity type semiconductor layer 310, from which the substrate 1 is separated and exposed, is further removed, Similarly, the first conductivity type semiconductor layers 310 of the first, second, and third light emitting portions P1, P2, and P3 may be separated from each other.

13A, when the first conductivity type semiconductor layer 310, the active layer 320, and the second conductivity type semiconductor layer 330 are mesa-etched, the first, second, and third light emission The first conductivity type semiconductor layer 310 is removed to expose the upper surface of the substrate 1 between the first, second, and third light emitting portions P1, P2, and P3, The first conductive semiconductor layer 310 may be disposed separately.

13C, the reflective electrode 350 may be formed on the first conductive semiconductor layer 310 of the light emitting structure 300 in which the substrate 1 is separated and exposed. The protective layer 370 is formed on the reflective electrode 350 and the protective layer 370 is selectively removed so that the first, second, and third light emitting portions P1, P2, and P3 A through hole 371 exposing the reflective electrode 350 in the region overlapping in the vertical direction is formed. 13E, a first electrode 394 which is in electrical contact with the reflective electrode 350 exposed through the through hole 371 may be formed on the protective layer 370. [

Next, as shown in FIG. 13F, the support pad 400 may be removed from the light emitting structure 300. For example, the photoresist layer 410 may be removed by dipping in a stripper solution. The stripper solution may contain a variety of organic and inorganic solvents that can dissolve the photoresist. Removing the photoresist layer 410 may also remove the support layer 430 from the light emitting structure 300. Thus, the chip-level light emitting device 10 including the first, second, and third light emitting portions P1, P2, and P3 can be formed. Alternatively, the first electrode 394 may be formed directly on the reflective electrode 350.

14A and 14B are cross-sectional views of the light emitting device of the fourth embodiment.

14A, the first conductivity type semiconductor layers 510 of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting device 10 of the fourth embodiment may be disposed separately from each other The first electrodes 591, 592 and 593 which are in contact with the first conductive type semiconductor layer 510 of the first, second and third light emitting portions P1, P2 and P3 are connected to different driving wirings 45, 44, 43, respectively. In this case, driving of the first, second, and third light emitting portions P1, P2, and P3 of the light emitting element 10 can be individually controlled through the drive wirings 45, 44, and 43.

The common wiring 41 of the panel that supplies power to the first, second, and third light emitting units P1, P2, and P3 is connected to the first, second, The second electrodes 594 which are in contact with the second conductivity type semiconductor layer 530 of the first, second and third light emitting portions P1, P2 and P3 are supplied to the first, .

Specifically, the second electrode 594 is disposed on the lower surface of the light emitting structure 500 and is connected to the reflective electrodes 561, 562, and 563 of the first, second, and third light emitting portions P1, P2, And can be disposed separately. In this case, the second electrodes 594, which are in contact with the reflective electrodes 561, 562 and 563 of the first, second and third light emitting portions P1, P2 and P3, The reflective electrodes 561, 562, and 563 of the first, second, and third light emitting units P1, P2, and P3 may be connected to one second electrode 594 as shown in FIG. The reflective electrodes 561, 562, and 563 of the first, second, and third light emitting units P1, P2, and P3 may be electrically connected through the second electrode 594.

As described above, the light emitting device 10 of the embodiment includes the first, second, and third light emitting units P1, P2, and P3 that are individually driven, As shown in FIG. At this time, the first, second, and third light emitting portions P1, P2, and P3 may function as respective sub-pixels of the pixel. Therefore, a high-resolution display device can be realized.

The light emitting device described above can be applied to an electric signboard or a mobile communication terminal to implement an image, and can be applied to a traffic light, a vehicle headlight, and the like.

15 is a view of a mobile communication terminal including a panel in which light emitting devices of the embodiment are disposed.

As shown in FIG. 15, the mobile communication terminal 1 may include a screen 2 for displaying an image and a case 3 for surrounding the screen 2. The display 2 includes a panel, and the above-described light emitting device 10 may be disposed in each pixel of the panel. For example, as a light source of a video display device or a light source of an illumination device.

When used as a backlight unit of a video display device, it can be used as an edge-type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or bulb type. It is possible.

The light emitting element includes a laser diode in addition to the light emitting diode described above.

The laser diode may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, like the light emitting element. Then, electro-luminescence (electroluminescence) phenomenon in which light is emitted when an electric current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, And phase. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication, medical equipment and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As such a photodetector, a photodiode (e.g., a PD with a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodiode (e.g., a photodiode such as a photodiode (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide) , Photomultiplier tube, phototube (vacuum, gas-filled), IR (Infra-Red) detector, and the like.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the light emitting device, may include the first conductivity type semiconductor layer having the structure described above, the active layer, and the second conductivity type semiconductor layer, and may have a pn junction or a pin structure. The photodiode operates by applying reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: Light emitting element
100, 200, 300, 500: light emitting structure
110, 210, 310, 510: a first conductive semiconductor layer
120, 220, 320, 520:
120a: first active layer
120b: second active layer
121, 221, 321:
122, 222, 322: wavelength conversion layer
122R, 222R, and 322R: a red wavelength conversion layer
123a, 223a, and 323a: blue color filters
123b, 223b, 323b: green color filters
123c, 223c, and 323c: a red color filter
130, 230, 330, 510: the second conductivity type semiconductor layer
161, 162, 163, 350: reflection electrode
164: connecting electrode
170, 270, 370, 570: protective layer
191, 192, 193, 291, 292, 293, 361, 362, 363, 594:
194, 294, 394, 591, 592, 593:

Claims (20)

A first conductive type semiconductor layer, first, second and third active layers arranged on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the first, second and third active layers, A light emitting structure including a first light emitting portion including the first active layer, a second light emitting portion including the second active layer, and a third light emitting portion including the third active layer.
A reflective electrode disposed on the second conductive semiconductor layer;
A connection electrode electrically connected to the first conductivity type semiconductor layer of the light emitting structure in a direction perpendicular to the first conductivity type semiconductor layer;
A protective layer disposed on the light emitting structure and exposing a lower surface of the first conductive semiconductor layer;
A plurality of through holes formed in the protection layer to expose the reflective electrode and the connection electrode;
A first electrode formed in the through hole and electrically connected to the connection electrode; And
And a second electrode formed in the through hole and electrically connected to the reflective electrode of the first, second, and third light emitting portions, respectively. The method according to claim 1,
Wherein the first, second, and third light emitting portions share the first conductive type semiconductor layer or the first conductive type semiconductor layers of the first, second, and third light emitting portions are separated from each other, And electrically connecting the first conductivity type semiconductor layers of the first, second, and third light emitting portions. The method according to claim 1,
The first, second, and third active layers generate light of a blue wavelength band,
A wavelength conversion layer and a color filter arranged to overlap the first, second, and third light emitting portions in the vertical direction with the first conductive type semiconductor layer interposed therebetween, and the first, second, And each of which emits light of blue, green, and red wavelengths, respectively. The method according to claim 1,
The second active layer generates light in a green wavelength range, the first and third active layers generate light in a blue wavelength range,
And a wavelength conversion layer disposed so as to overlap with the third light emitting portion in the vertical direction with the first conductivity type semiconductor layer interposed therebetween, wherein the first, second, and third light emitting portions are disposed in the blue, green, A semiconductor device that emits light. The method according to claim 1,
Wherein the first electrode and the second electrode are disposed in a direction in which the second conductive type semiconductor layer is disposed with respect to the first, second, and third active layers of the light emitting structure. A first conductive type semiconductor layer, first, second and third active layers arranged on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the first, second and third active layers, A light emitting structure including a first light emitting portion including the first active layer, a second light emitting portion including the second active layer, and a third light emitting portion including the third active layer.
A reflective electrode disposed on the second conductive semiconductor layer;
A protective layer disposed on the light emitting structure and including a through hole exposing the reflective electrode;
A first electrode disposed on the first conductive type semiconductor layer and electrically connected to the first conductive type semiconductor layer; And
And a second electrode formed in the through hole and electrically connected to the reflective electrode of the first, second, and third light emitting portions, respectively. The method according to claim 6,
Wherein the first, second, and third light emitting portions share the first conductive type semiconductor layer or are disposed so that the first conductive type semiconductor layers of the first, second, and third light emitting portions are separated from each other. The method according to claim 6,
The first, second, and third active layers all generate light in the blue wavelength range,
Wherein the second active layer generates light in a green wavelength range and the first and third active layers generate light in a blue wavelength range. The method according to claim 6,
Wherein the first electrode is disposed in a direction in which the first conductive semiconductor layer is disposed with respect to the first, second, and third active layers of the light emitting structure,
Wherein the second electrode is disposed in a direction in which the second conductivity type semiconductor layer is disposed based on the first, second, and third active layers of the light emitting structure. The method according to claim 6,
Wherein the first electrode which is in contact with the first conductivity type semiconductor layer of the first, second and third light emitting portions is integral. The method according to claim 6,
And the first electrodes which are in contact with the first conductivity type semiconductor layers of the first, second and third light emitting portions are arranged separately from each other. First, second and third active layers arranged on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the first, second and third active layers, respectively, A light emitting structure including a first light emitting portion including the first active layer, a second light emitting portion including the second active layer, and a third light emitting portion including the third active layer.
A reflective electrode electrically contacting the first conductive semiconductor layer of the light emitting structure;
A protective layer overlapping the light emitting structure in the vertical direction with the reflective electrode interposed therebetween;
A through hole formed in the protection layer to expose the reflective electrode;
A first electrode formed in the through hole and electrically in contact with the reflective electrode; And
And a second electrode electrically connected to the second conductive type semiconductor layer of the first, second, and third light emitting portions, respectively. 13. The method of claim 12,
Wherein the first, second, and third light emitting portions share the first conductive type semiconductor layer or are disposed so that the first conductive type semiconductor layers of the first, second, and third light emitting portions are separated from each other. 13. The method of claim 12,
The first, second, and third active layers all generate light in the blue wavelength range,
Wherein the second active layer generates light in a green wavelength range and the first and third active layers generate light in a blue wavelength range. 13. The method of claim 12,
Wherein the first electrode is disposed in a direction in which the first conductive semiconductor layer is disposed with respect to the first, second, and third active layers of the light emitting structure,
Wherein the second electrode is disposed in a direction in which the second conductivity type semiconductor layer is disposed based on the first, second, and third active layers of the light emitting structure. 13. The method of claim 12,
And the reflective electrode contacting the first conductivity type semiconductor layer of the first, second, and third light emitting portions are disposed separately from each other. 13. The method of claim 12,
Wherein the first electrode which is in contact with the reflective electrode of the first, second and third light emitting portions is integral. 13. The method of claim 12,
And the first electrodes that are in contact with the reflective electrodes of the first, second, and third light emitting portions are disposed separately from each other. A display device comprising the semiconductor device according to any one of claims 1 to 18. 20. The method of claim 19,
And a panel including a plurality of pixel regions defined by intersection of a plurality of common lines and a plurality of driving lines,
Second, and third sub-pixels in which the semiconductor devices are disposed for each pixel region, and the first, second, and third light emitting portions emit light in blue, green, and red wavelength regions, respectively.

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