KR20170112970A - 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 - Google Patents
산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 Download PDFInfo
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- KR20170112970A KR20170112970A KR1020160163661A KR20160163661A KR20170112970A KR 20170112970 A KR20170112970 A KR 20170112970A KR 1020160163661 A KR1020160163661 A KR 1020160163661A KR 20160163661 A KR20160163661 A KR 20160163661A KR 20170112970 A KR20170112970 A KR 20170112970A
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- temperature
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- sintered body
- sintering
- sputtering target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/604—Pressing at temperatures other than sintering temperatures
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2016-071381 | 2016-03-31 | ||
JP2016071381A JP6125689B1 (ja) | 2016-03-31 | 2016-03-31 | 酸化インジウム−酸化亜鉛系(izo)スパッタリングターゲット |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020180077156A Division KR101956506B1 (ko) | 2016-03-31 | 2018-07-03 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
KR1020190017109A Division KR20190019104A (ko) | 2016-03-31 | 2019-02-14 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
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KR20170112970A true KR20170112970A (ko) | 2017-10-12 |
Family
ID=58704743
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160163661A KR20170112970A (ko) | 2016-03-31 | 2016-12-02 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
KR1020180077156A KR101956506B1 (ko) | 2016-03-31 | 2018-07-03 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
KR1020190017109A KR20190019104A (ko) | 2016-03-31 | 2019-02-14 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
KR1020200017636A KR102322184B1 (ko) | 2016-03-31 | 2020-02-13 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020180077156A KR101956506B1 (ko) | 2016-03-31 | 2018-07-03 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
KR1020190017109A KR20190019104A (ko) | 2016-03-31 | 2019-02-14 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
KR1020200017636A KR102322184B1 (ko) | 2016-03-31 | 2020-02-13 | 산화인듐-산화아연계 (izo) 스퍼터링 타깃 및 그 제조 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6125689B1 (zh) |
KR (4) | KR20170112970A (zh) |
CN (3) | CN107267936A (zh) |
TW (2) | TWI645059B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190114895A (ko) * | 2018-03-30 | 2019-10-10 | 제이엑스금속주식회사 | 스퍼터링 타겟 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020143359A (ja) * | 2019-03-08 | 2020-09-10 | Jx金属株式会社 | スパッタリングターゲット部材の製造方法及びスパッタリングターゲット部材 |
CN113555451A (zh) * | 2020-04-23 | 2021-10-26 | 南方科技大学 | 一种透明光电器件的制备方法及透明光电器件 |
CN115679259A (zh) * | 2021-07-30 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Izo薄膜制备方法及物理气相沉积设备 |
CN113956022A (zh) * | 2021-11-30 | 2022-01-21 | 郑州大学 | 一种锌掺杂氧化铟粉体、溅射靶材及其制备方法 |
CN116041047B (zh) * | 2022-12-15 | 2024-05-17 | 先导薄膜材料(广东)有限公司 | 一种溅镀用izo掺杂靶材及其制备方法 |
CN116199496B (zh) * | 2022-12-15 | 2024-07-19 | 先导薄膜材料(广东)有限公司 | 一种氧化铟锌掺杂稀土金属靶材及其制备方法 |
CN116162908B (zh) * | 2022-12-15 | 2024-08-30 | 先导薄膜材料(广东)有限公司 | 一种氧化铟锌靶材及其制备方法 |
CN116219375B (zh) * | 2022-12-15 | 2024-07-19 | 先导薄膜材料(广东)有限公司 | 一种氧化铟锌靶材及其制备方法 |
CN116177993A (zh) * | 2022-12-15 | 2023-05-30 | 先导薄膜材料(广东)有限公司 | 一种氧化铟锌烧结靶及其制备方法 |
CN117247273B (zh) * | 2023-11-17 | 2024-02-23 | 江苏迪纳科精细材料股份有限公司 | 高迁移率的x-izo磁控溅射靶材的制备方法与装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3734540B2 (ja) | 1995-10-13 | 2006-01-11 | 三井金属鉱業株式会社 | 酸化インジウム−酸化亜鉛系焼結体ターゲットの製造方法 |
JP3721080B2 (ja) * | 1999-05-10 | 2005-11-30 | 株式会社日鉱マテリアルズ | スパッタリングターゲット及びその製造方法 |
JP3628566B2 (ja) * | 1999-11-09 | 2005-03-16 | 株式会社日鉱マテリアルズ | スパッタリングターゲット及びその製造方法 |
EP1777321A1 (en) | 1999-11-25 | 2007-04-25 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive oxide, and process for producing the sputtering target |
CN1320155C (zh) * | 2001-06-26 | 2007-06-06 | 三井金属矿业株式会社 | 高电阻透明导电膜用溅射靶及高电阻透明导电膜的制造方法 |
US7897067B2 (en) * | 2003-05-20 | 2011-03-01 | Idemitsu Kosan Co., Ltd. | Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display |
TWI390062B (zh) * | 2004-03-05 | 2013-03-21 | Tosoh Corp | 圓柱形濺射標靶,陶瓷燒結體,以及製造燒結體的方法 |
JP5156181B2 (ja) | 2005-06-30 | 2013-03-06 | 出光興産株式会社 | 酸化インジウム・酸化亜鉛焼結体の製造方法 |
JP4758697B2 (ja) | 2005-07-01 | 2011-08-31 | 出光興産株式会社 | Izoスパッタリングターゲットの製造方法 |
JP4762062B2 (ja) * | 2006-06-22 | 2011-08-31 | 出光興産株式会社 | 焼結体、膜及び有機エレクトロルミネッセンス素子 |
KR101346472B1 (ko) * | 2008-06-06 | 2014-01-02 | 이데미쓰 고산 가부시키가이샤 | 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법 |
JP5096250B2 (ja) * | 2008-07-18 | 2012-12-12 | 出光興産株式会社 | 酸化物焼結体の製造方法、酸化物焼結体、スパッタリングタ−ゲット、酸化物薄膜、薄膜トランジスタの製造方法及び半導体装置 |
CN102191465A (zh) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | 一种铟掺杂氧化锌靶材及透明导电膜的制备方法 |
JPWO2012153522A1 (ja) * | 2011-05-10 | 2014-07-31 | 出光興産株式会社 | In2O3−ZnO系スパッタリングターゲット |
JP2014043598A (ja) * | 2012-08-24 | 2014-03-13 | Ulvac Japan Ltd | InZnO系スパッタリングターゲットの製造方法 |
KR101973873B1 (ko) * | 2013-03-29 | 2019-04-29 | 제이엑스금속주식회사 | Igzo 스퍼터링 타깃 및 igzo 막 |
JP6225530B2 (ja) * | 2013-07-19 | 2017-11-08 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
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2016
- 2016-03-31 JP JP2016071381A patent/JP6125689B1/ja active Active
- 2016-11-16 TW TW105137428A patent/TWI645059B/zh active
- 2016-11-16 TW TW107122136A patent/TWI661069B/zh active
- 2016-12-02 KR KR1020160163661A patent/KR20170112970A/ko not_active Application Discontinuation
- 2016-12-28 CN CN201611242711.5A patent/CN107267936A/zh active Pending
- 2016-12-28 CN CN201810723839.6A patent/CN108930015A/zh active Pending
- 2016-12-28 CN CN202210337974.3A patent/CN114752901A/zh active Pending
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2018
- 2018-07-03 KR KR1020180077156A patent/KR101956506B1/ko active IP Right Grant
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2019
- 2019-02-14 KR KR1020190017109A patent/KR20190019104A/ko not_active Application Discontinuation
-
2020
- 2020-02-13 KR KR1020200017636A patent/KR102322184B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190114895A (ko) * | 2018-03-30 | 2019-10-10 | 제이엑스금속주식회사 | 스퍼터링 타겟 |
Also Published As
Publication number | Publication date |
---|---|
KR102322184B1 (ko) | 2021-11-04 |
TWI661069B (zh) | 2019-06-01 |
KR20190019104A (ko) | 2019-02-26 |
CN108930015A (zh) | 2018-12-04 |
CN107267936A (zh) | 2017-10-20 |
TW201805457A (zh) | 2018-02-16 |
JP2017179536A (ja) | 2017-10-05 |
JP6125689B1 (ja) | 2017-05-10 |
CN114752901A (zh) | 2022-07-15 |
TW201837222A (zh) | 2018-10-16 |
KR101956506B1 (ko) | 2019-03-08 |
KR20200019654A (ko) | 2020-02-24 |
KR20180081686A (ko) | 2018-07-17 |
TWI645059B (zh) | 2018-12-21 |
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