KR20170109335A - Apparatus for growing grystal having auxiliary heat source member - Google Patents
Apparatus for growing grystal having auxiliary heat source member Download PDFInfo
- Publication number
- KR20170109335A KR20170109335A KR1020160033327A KR20160033327A KR20170109335A KR 20170109335 A KR20170109335 A KR 20170109335A KR 1020160033327 A KR1020160033327 A KR 1020160033327A KR 20160033327 A KR20160033327 A KR 20160033327A KR 20170109335 A KR20170109335 A KR 20170109335A
- Authority
- KR
- South Korea
- Prior art keywords
- crucible
- heat
- inner crucible
- auxiliary
- present
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 53
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 238000001816 cooling Methods 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000289 melt material Substances 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 13
- 239000004020 conductor Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
- H05B3/66—Supports or mountings for heaters on or in the wall or roof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/004—Heaters using a particular layout for the resistive material or resistive elements using zigzag layout
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal growth apparatus, and more particularly, to a crystal growth apparatus having a supplementary heating unit to maintain a thermal balance inside a growth furnace.
The present invention can be applied to an apparatus for growing various crystals. However, in order to explain the superiority of the present invention, the characteristics of the present invention will be described by taking as an example a sapphire single crystal growing apparatus which requires high temperature control.
In the case of the conventional sapphire growth method, in order to cope with an increase in demand, it has been essential to increase the crystal size in a productivity improvement method aiming at mass production. However, in order to grow large crystals, it is necessary to extend the crystal growth time and the cooling time, so that the production time is prolonged. As a result, the productivity as expected can not be improved. In order to secure the crystal quality, Technology development is required.
In order to overcome these problems and improve the productivity, a method of growing a plurality of single crystals at the same time by increasing the utilization ratio of the material by making the shape of the crystal square.
Korean Patent No. 10-1196445 is a prior art relating to securing temperature uniformity in the longitudinal direction by blocking the radiation of heat directly from the heating element when a plurality of crucibles are placed in a single thermostat. Specifically, in order to make the temperature in the horizontal direction of the crucible uniform, a plurality of heating elements are arranged in a divided state on the outside of the thermosensitive body so as to be independently operated. The heating element includes a plurality of side heating elements which are disposed on both sides of the outer wall of the thermosensitive body and connected to one electrode, and a connection heating element which connects the side heating elements from above.
However, when a plurality of crucibles are arranged in a single thermosensitive body, the temperature distribution on the right and left sides is different depending on the position of the crucible. In other words, the temperature distribution of the crucibles located in the inside of the crucibles arranged in a row is the same, but the distribution of the temperature in the right and left of the crucibles in the outer periphery of the row arrangement is changed, so that quality dispersion occurs, A problem that can not be avoided has arisen.
The crystal growth apparatus provided with the auxiliary heating unit according to the present invention has the following problems.
First, the problem is that a plurality of internal crucibles have the same temperature distribution. In particular, the temperature distribution of each inner crucible disposed at the outer end of the row arrangement is the same as that of the other inner crucibles.
Second, it is an object of the present invention to provide a crystal growth apparatus and method for growing a single crystal of excellent quality and uniform quality grown in all crucibles.
Third, an economical and efficient sapphire single crystal growing apparatus and a growth method using the same are provided to improve the yield and increase productivity by arranging a plurality of crucibles in a growth furnace and simultaneously growing a plurality of sapphire single crystals.
The present invention has been made in view of the above problems, and it is an object of the present invention to provide an apparatus and method for controlling the same.
The present invention relates to a crystal growth apparatus provided with an auxiliary heating unit, comprising: a furnace; A plurality of internal crucibles arranged in line in the furnace, the raw materials melting and allowing the crystal to grow from the seed crystals; A main heating unit disposed on an outer front surface and a rear surface of each of the inner crucibles to heat the inner crucible; And a temperature sensor extending from the outside of the furnace to the inside to measure the temperature inside the furnace and the temperature inside the crucible.
It is preferable that the present invention further includes an auxiliary heating unit disposed on the left and right sides of the outer crucible disposed at both ends of the row arrangement, where the main heating unit is not disposed.
The auxiliary heating portion according to the present invention is preferably a dummy crucible.
The dummy crucible according to the present invention is provided in the same size as the inner crucible or smaller than the inner crucible, and the same raw material as the inner crucible is preferably charged.
The auxiliary heat generating part according to the present invention is provided with a high temperature heating element, and the high temperature heating element is preferably any one of molybdenum, tungsten, tantalum and graphite.
The auxiliary heating unit according to the present invention is provided as an auxiliary electric heater and the heating value of the auxiliary electric heater is preferably smaller than the heating value of the electric heater of the heating unit.
It is preferable that the auxiliary electric heater according to the present invention has a lower cross sectional area than the upper portion and a smaller cross sectional area toward the upper portion.
The auxiliary electric heater according to the present invention is preferably formed in a corrugated structure.
The crystal growth apparatus having the auxiliary heating unit according to the present invention has the following effects.
First, there is an effect that a separate auxiliary heating portion is provided in the inner crucible disposed at the outer end of the row arrangement to uniform the temperature distribution of all the inner crucibles.
Second, it has the effect of improving the yield by homogenizing the quality of all the internal crucibles.
Third, regardless of the number of inner crucibles, it can be applied only to the inner crucible disposed at the outer end, which is very economical and efficient.
The effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.
1 and 2 are a plan view and a front view of the prior art relating to an inner crucible arranged in a line.
3 and 4 are a plan view and a front view showing a dummy crucible embodiment according to the present invention.
5 and 6 are a front view and a side view showing an embodiment of an auxiliary electric heater according to the present invention.
7 is a front view and a side view of an auxiliary electric heater according to the present invention.
Fig. 8 is a schematic view showing the constitution and use of tilting (tilting) in the annealing heat insulating means according to the present invention.
Fig. 9 is a schematic view showing the construction and use of slipping (sliding) in the annealing and heat insulating means according to the present invention.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Wherever possible, the same or similar parts are denoted using the same reference numerals in the drawings.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular forms as used herein include plural forms as long as the phrases do not expressly express the opposite meaning thereto.
Means that a particular feature, region, integer, step, operation, element and / or component is specified and that other specific features, regions, integers, steps, operations, elements, components, and / It does not exclude the existence or addition of a group.
All terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Predefined terms are further interpreted as having a meaning consistent with the relevant technical literature and the present disclosure, and are not to be construed as ideal or very formal meanings unless defined otherwise.
1 and 2 are a plan view and a front view of the prior art relating to an inner crucible arranged in a line. FIG. 1 and FIG. 2 show the construction of a plurality of conventional sapphire single crystal growing apparatuses. The temperature distribution in the upper and lower portions of the crucible is uniformly distributed by the heater. However, In the case of the crucibles 1 and 6 located at both ends of the arrangement, the temperature distribution on the right and left sides greatly differs. This is because the crucible 2 is disposed on the right side of the crucible 1 in Fig. 1 as a heat generating element, but no heat generating element is disposed on the left side of the crucible 1. 1, the crucible 5 is disposed as a heat generating element, but the right side of the crucible 6 is not provided with any heat generating element. Therefore, when the crystal grows, the crucibles 1,6 exhibit a different shape from the crucibles 2 to 5, and thus the crystal quality of the crucibles 1 and 6 is lowered and the yield is significantly lowered.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
The present invention includes a furnace 100, a plurality of
The
The
The
It is further preferable that the auxiliary heating unit 500 disposed on the left side or the right side of the
As an embodiment of the auxiliary heating unit 500 according to the present invention, it is preferable that the
It is preferable that the
The
The auxiliary heating part 500 according to the present invention is provided with a high temperature heating element (not shown), and the high temperature heating element is preferably any one of molybdenum, tungsten, tantalum and graphite. The high temperature heating element according to the present invention is an object disposed after being externally applied with heat and emitting high temperature heat. The shape of the crucible is not limited, but is preferably similar to the inner crucible. The high temperature means a temperature similar to the temperature that the inner crucible emits.
It is preferable that the auxiliary heating unit 500 according to the present invention is an auxiliary
5 and 6 are a front view and a side view showing an embodiment of an auxiliary electric heater according to the present invention. 5, the left and right temperature distributions of the crucibles 1 and 6 having different temperature distributions can be controlled similarly to the crucibles 2 to 4 by using the
As shown in FIG. 7, the
The auxiliary
The auxiliary
It is also necessary to provide an annealing and heat insulating means capable of effectively preventing the cooling of the lower portion of the crucible and simultaneously removing the stress by annealing in order to remove the stress existing in the grown single crystal through cooling and gradual cooling of the lower portion of the inner crucible .
In the present invention, cooling means (600) installed to extend downward from the bottom of the inner crucible to prevent complete melting of the seed crystal and to perform crystal growth by temperature difference between the upper and lower portions of the inner crucible; And an annealing and insulating means (700) for removing the temperature difference between the cooling water stage and the inner crucible by intercepting the cooling flow while releasing the crystal growth to the lower part of the bottom of the inner crucible of the cooling means in the annealing step, It is preferable to additionally provide this.
The annealing insulation means 700 according to the present invention comprises: a
8 is characterized in that a cooling means 600 composed of a
9 is characterized in that a cooling means 600 composed of a
The material of the annealing and heat insulating means according to the present invention is preferably a high melting point metal, an alloy thereof, or a graphite, graphite fiber or a composite thereof.
While the present invention has been particularly shown and described with reference to specific embodiments thereof, those skilled in the art will appreciate that such specific embodiments are merely preferred embodiments and that the scope of the present invention is not limited thereto will be. Accordingly, the actual scope of the present invention will be defined by the appended claims and their equivalents.
100: Furnace 200: Crucible
300: heating part 400: temperature sensor
500: auxiliary heating part 510: dummy crucible
520: electric heater 600: cooling means
700: Annealing heat insulating means 710: Side support
720: Heat flow cut-
Claims (8)
A plurality of internal crucibles arranged in series in the furnace, the raw materials melting and allowing the crystals to grow from the seed crystals;
A main heating unit disposed on an outer front surface and a rear surface of each of the inner crucibles to heat the inner crucible; And
And a temperature sensor extending from the outside of the furnace to the inside to measure the temperature inside the furnace and the temperature of the internal crucible,
Further comprising an auxiliary heat generating unit disposed on the left and right sides of the outer side of the inner crucible disposed at both ends of the row arrangement in which the main heat generating unit is not disposed.
Wherein the auxiliary heating unit is a dummy crucible.
The inner crucible is the same size as the inner crucible or smaller than the inner crucible,
Wherein the same raw material as the inner crucible is charged.
The auxiliary heating unit may be a high temperature heating element,
Wherein the high temperature heating element is one of molybdenum, tungsten, tantalum, and graphite.
The auxiliary heat generating portion is provided as an auxiliary electric heater,
Wherein the heating value of the auxiliary electric heater is smaller than the heating value of the electric heater of the heating unit.
Wherein the auxiliary electric heater has a lower cross sectional area than that of the upper portion and has a smaller cross sectional area toward the upper portion.
Wherein the auxiliary electric heater is formed in a wrinkled structure.
Cooling means installed to extend from the bottom of the inner crucible to the bottom to prevent complete melting of the seed crystal and to perform crystal growth by the temperature difference between the upper and lower portions of the inner crucible; And an annealing heat insulating means for removing the temperature difference between the upper end of the inner crucible and the lower crucible by interrupting the cooling and releasing the heat flow between the cooling end and the inner crucible, Respectively,
The annealing heat insulating means includes: a side support portion surrounding the cooling means; And a heat flow cutoff portion which slides or tilts according to the upward and downward movement of the cooling means. The heat cutoff portion cuts off heat flow by the heat cutoff portion when the cooling means falls,
Characterized in that the material of the annealing and heat insulating means is a high melting point metal, an alloy thereof, graphite, graphite fiber or a composite material thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160033327A KR101785038B1 (en) | 2016-03-21 | 2016-03-21 | Apparatus for growing grystal having auxiliary heat source member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160033327A KR101785038B1 (en) | 2016-03-21 | 2016-03-21 | Apparatus for growing grystal having auxiliary heat source member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170109335A true KR20170109335A (en) | 2017-09-29 |
| KR101785038B1 KR101785038B1 (en) | 2017-11-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160033327A KR101785038B1 (en) | 2016-03-21 | 2016-03-21 | Apparatus for growing grystal having auxiliary heat source member |
Country Status (1)
| Country | Link |
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| KR (1) | KR101785038B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109898136A (en) * | 2019-04-03 | 2019-06-18 | 贝民贤 | Multiple Sapphire Crystal Growth device and growing method |
| KR102724353B1 (en) * | 2023-10-16 | 2024-10-31 | 주식회사 쎄닉 | Silicon carbide ingot manufacturing apparatus and manufacturing method of silicon carbide ingot using the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101136143B1 (en) * | 2009-09-05 | 2012-04-17 | 주식회사 크리스텍 | Method and Apparatus for Growing Sapphire Single Crystal |
| KR101196445B1 (en) * | 2012-05-03 | 2012-11-01 | 주식회사 크리스텍 | Apparatus for Growing Sapphire Crystal and Method for Growing Sapphire Crystal Using the Same |
-
2016
- 2016-03-21 KR KR1020160033327A patent/KR101785038B1/en active IP Right Grant
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109898136A (en) * | 2019-04-03 | 2019-06-18 | 贝民贤 | Multiple Sapphire Crystal Growth device and growing method |
| KR102724353B1 (en) * | 2023-10-16 | 2024-10-31 | 주식회사 쎄닉 | Silicon carbide ingot manufacturing apparatus and manufacturing method of silicon carbide ingot using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101785038B1 (en) | 2017-11-20 |
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