CN115652413A - Crucible support for single crystal growth - Google Patents

Abstract

The present disclosure relates to a crucible support for single crystal growth, comprising: the support column comprises a support column body, wherein a hollow cavity which extends along the axial direction of the support column body and is provided with an opening at the top is arranged in the center of the support column body; and the center of the filler is provided with a through hole for a detaching tool to pass through, the filler is provided with a plurality of fillers, the fillers can be selectively placed in the hollow cavity to adjust the heat conductivity of the crucible support, the filler is in a block shape, and the outer diameter of the filler corresponds to the inner diameter of the hollow cavity so as to be stacked in the hollow cavity. This openly is equipped with pillar body and multiple filler, this internal cavity that is equipped with of pillar, it is multiple the filler is optionally placed in the cavity intracavity is in order to adjust the heat conductivity of crucible pillar, can adjust the temperature gradient when growing single crystal through the heat conductivity of adjustment crucible pillar, also be the temperature gradient of adjusting the interior crucible of crystal growing furnace, avoid because of the crystal quality problem that the insulation material warp in the crystal growing furnace and lead to, promote crystal productivity and yield.

Description

Crucible support for single crystal growth

Technical Field

The disclosure relates to the technical field of crystal material preparation, in particular to a crucible support for single crystal growth.

Background

The sapphire manufactured by the kyropoulos method generally adopts a tungsten crucible, the bottom of the crucible is contacted with a tungsten tray, and the tungsten tray is supported by a support. The crucible pillar has the main function of supporting the weight of the crucible and the raw materials in the pot, has the secondary function of heat conduction, can transfer heat of the bottom of the crucible to the bottom of the pot through heat conduction and heat radiation, and is communicated with cooling circulating water at the bottom of the pot to take away the heat through the circulating water. During design and thermal field simulation of the kyropoulos method crystal growth furnace, the heat transfer effect of the support is considered, so that a radial temperature gradient with low middle temperature and high side temperature is generated at the bottom of the crucible.

With the increase of the use frequency of the crystal growth furnace in actual production, the heat insulation material of the crystal growth furnace can be slowly deformed, so that the actual temperature gradient of the crystal growth furnace deviates from the design value. After gradient change, the crystal growth process is influenced, so that the crystallization rate deviates from a theoretical design value, and particularly, in the ending stage of crystal growth, clustered bubbles appear, so that the product quality is seriously influenced.

Disclosure of Invention

An object of the present disclosure is to provide a crucible prop for single crystal growth, which can adjust thermal conductivity to adjust a temperature gradient during single crystal growth.

In order to achieve the above object, the present disclosure provides a crucible support for single crystal growth, comprising: the pillar body is internally provided with a hollow cavity which extends along the axial direction of the pillar body and is provided with an opening at the top; and the center of the filler is provided with a through hole for a detaching tool to pass through, the filler is provided with a plurality of fillers, the fillers can be selectively placed in the hollow cavity to adjust the heat conductivity of the crucible support, the filler is in a block shape, and the outer diameter of the filler corresponds to the inner diameter of the hollow cavity so as to be stacked in the hollow cavity.

Optionally, the filler comprises a heat conducting filler and an insulating filler, and one or both of the heat conducting filler and the insulating filler are optionally placed in the hollow cavity.

Optionally, the thermally conductive filler and the post body are both made of a thermally conductive material, which is tungsten, molybdenum, graphite, iridium, or rhenium.

Optionally, the heat insulating filler is made of a heat insulating material, and the heat insulating material is alumina, zirconia or mullite.

Optionally, the crucible support further comprises a base, and the support body is disposed on the base.

Optionally, the pillar body is configured to be cylindrical, and the hollow cavity is configured to be cylindrical.

Optionally, the diameter of the pillar body is 80mm to 110mm, the inner diameter of the hollow cavity is 40mm to 55mm, and the inner diameter of the hollow cavity has a negative tolerance of 0mm to-1 mm.

Optionally, the crucible support is a crucible support for sapphire made by kyropoulos method.

Through the technical scheme, this openly is equipped with pillar body and multiple filler, this internal cavity that is equipped with of pillar, and is multiple the filler is optionally placed in the cavity intracavity is in order to adjust the heat conductivity of crucible pillar is equipped with the convenient dismantlement of through-hole on the filler, and the filler is cubic to the quantity that is used for adjusting the filler as required in the cavity intracavity is placed in the stack, can adjust the temperature gradient when growing single crystal through the heat conductivity of adjustment crucible pillar, also is the temperature gradient of adjusting the long brilliant stove crucible in exactly, avoids the crystal quality problem because of insulation material warp in the long brilliant stove leads to, promotes crystal productivity and yield.

Additional features and advantages of the present disclosure will be set forth in the detailed description which follows.

Drawings

The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:

FIG. 1 is a cross-sectional view of a crucible support for single crystal growth according to the present disclosure;

FIG. 2 is a top view of a packing according to the present disclosure;

FIG. 3 is a top view of a crucible support for single crystal growth according to the present disclosure.

Description of the reference numerals

1. A pillar body; 2. a hollow cavity; 3. a filler; 31. a thermally conductive filler; 32. a heat-insulating filler; 4. a base; 5. and a through hole.

Detailed Description

The following detailed description of specific embodiments of the present disclosure is provided in connection with the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present disclosure, are given by way of illustration and explanation only, not limitation.

In the present disclosure, unless otherwise specified, use of directional terms such as "upper, lower, bottom, top" generally refers to upper, lower, bottom, top of the respective component in the direction of gravity, "inner, outer" refers to inner, outer relative to the profile of the component or structure itself. In addition, it should be noted that terms such as "first", "second", and the like are used for distinguishing one element from another, and have no order or importance. In addition, in the description with reference to the drawings, the same reference numerals in different drawings denote the same elements.

The temperature of the single crystal growth needs to be controlled, the temperature gradient affects the crystal growth process, in the previous embodiment, the temperature gradient of the single crystal growth is controlled through the crystal growth furnace, along with the increase of the use frequency of the crystal growth furnace in the actual production, the heat insulation material of the crystal growth furnace can be slowly deformed, the actual temperature gradient of the crystal growth furnace deviates from a design value, after the temperature gradient changes, the crystallization rate deviates from a theoretical design value, especially in the ending stage of the crystal growth, the clustered bubbles can appear, the product quality is seriously affected, at the moment, if the temperature gradient change is avoided, only the crystal growth furnace can be replaced, but the cost for replacing the crystal growth furnace is higher, the inventor finds that the temperature gradient of the crucible can be adjusted by adjusting the heat conductivity of a crucible support, namely, the temperature gradient during the sapphire crystal growth is adjusted, the crystal quality problem caused by the deformation of a thermal field is avoided, the crystal yield and the yield are improved, while the crucible support in the previous embodiment is solid or hollow, the material is fixed, the heat conductivity efficiency is fixed, and the heat conductivity cannot be adjusted, so the present disclosure is provided.

As shown in fig. 1-3, the present disclosure provides a crucible support for single crystal growth, comprising: the method comprises the following steps: the support column comprises a support column body 1, wherein a hollow cavity 2 which extends along the axial direction of the support column body and is provided with an opening at the top is arranged in the center of the support column body; the center of the filler 3 is provided with a through hole 5 for a disassembling tool to pass through, the disassembling tool is inserted into the through hole 5 to lift or put down the filler 3 to move the filler 3, the outer wall of the filler 3 is attached to the inner wall of the hollow cavity 2, so the filler can only move through the through hole 5 arranged in the center, for example, the disassembling tool can be a clip, the clip extends into the through hole 5, the opened two ends of the clip are abutted against the inner wall of the through hole 5 to lift the filler 3, and when the filler is put down, the clip is only required to be closed again; the fillers 3 are provided in various types, various fillers 3 can be selectively placed in the hollow cavity 2 to adjust the thermal conductivity of the crucible support, the fillers 3 are configured in block shapes, the outer diameter of each filler 3 corresponds to the inner diameter of the hollow cavity 2 to be stacked in the hollow cavity 2, the number of the fillers 3 can be adjusted as required, that is, a plurality of fillers 3 can be placed in the hollow cavity 2, and the thermal conductivity of the crucible support can be finely adjusted by increasing or decreasing the number of the fillers 3. In other embodiments, the filler 3 can also be configured as a vertical sheet-like or rod-like structure, and the thermal conductivity of the crucible support can be adjusted by transverse superposition.

According to the technical scheme, the crucible supporting column is provided with the supporting column body 1 and various fillers 3, the supporting column body 1 is internally provided with the hollow cavity 2, the various fillers 3 can be selectively placed in the hollow cavity 2 to adjust the heat conductivity of the crucible supporting column, the temperature gradient during single crystal growth can be adjusted by adjusting the heat conductivity of the crucible supporting column, namely the temperature gradient of the crucible in a crystal growth furnace is adjusted, the problem of crystal quality caused by deformation of a heat insulating material in the crystal growth furnace is avoided, and the crystal yield and the yield are improved; different fillers 3 are placed in the hollow cavity 2, so that the thermal conductivity of the side wall of the support body 1 is different from that of the middle part, the radial temperature gradient of the bottom of the crucible is adjusted, and the axial temperature gradient of the crucible in the crystal growth furnace is also changed due to the change of the overall thermal conductivity of the crucible support, so that the overall temperature gradient of the crucible is adjusted.

As an alternative embodiment, as shown in fig. 1-3, the filler 3 includes a heat conductive filler 31 and an insulating filler 32, one or both of which are selectively placed in the hollow cavity 2, and when it is desired to increase the bottom heat conduction of the crucible, the heat conductive filler 31 is placed in the hollow cavity 2; when the heat conduction at the bottom of the crucible needs to be reduced, the heat-insulating filler 32 is placed in the hollow cavity 2, so that the heat conductivity of the crucible support is adjusted, and two types of fillers 3 can be placed at the same time, so that the effect that only one type of filler 3 cannot be placed is achieved, for example, the heat conductivity is too high when only the heat-conducting filler 31 is placed, and at the moment, the heat-insulating filler 32 can be placed at the same time for neutralization, so that the heat conductivity is reduced.

Optionally, the heat conductive filler 31 and the pillar body 1 are made of heat conductive material, which is tungsten, molybdenum, graphite, iridium or rhenium, and the heat conductive material has high heat conductivity while being resistant to high temperature, so as to increase the heat conductivity of the crucible pillar.

Optionally, the heat insulating filler 32 is made of a heat insulating material, which is alumina, zirconia or mullite, and has a low thermal conductivity, so as to reduce the thermal conductivity of the crucible pillar and perform a heat insulating function.

As an alternative embodiment, as shown in fig. 1 or fig. 3, the crucible support further includes a base 4, the support body 1 is disposed on the base 4, and the stability of the support body 1 is increased, for example, the base 4 may be made of a high temperature resistant heat conductive material.

As an alternative embodiment, as shown in fig. 1 to 3, the pillar body 1 may be configured in any shape, for example, the pillar body 1 of the present disclosure is configured in a cylindrical shape, and the hollow cavity 2 is configured in a cylindrical shape, so that the cylindrical shape is uniformly stressed, the supporting force can be increased, and the cylindrical shape is more uniformly heat-conducting.

Optionally, the diameter of the pillar body 1 is 80mm to 110mm, the inner diameter of the hollow cavity 2 is 40mm to 55mm, and the inner diameter of the hollow cavity 2 has a negative tolerance of 0mm to-1 mm, which is suitable for producing crystals with larger sizes.

As an alternative embodiment, the crucible support is a crucible support for sapphire made by the kyropoulos method. The principle of the kyropoulos method is as follows: firstly, melting raw materials, then contacting a cooled seed crystal with a melt, if the temperature of an interface is lower than a freezing point, starting the growth of the seed crystal, and in order to continuously grow the crystal, gradually reducing the temperature of the melt, and simultaneously rotating the crystal to improve the temperature distribution of the melt; the crystal is grown by temperature control, only the head part of the crystal is pulled out during growth, the crystal part grows by temperature change, and the heating voltage is adjusted to enable the fused raw material to reach the most appropriate growth temperature range while the neck part is pulled out.

In actual use, a suitable amount of filler 3 is placed in the hollow cavity 2 of the pillar body 1 to adjust the crucible pillar to a suitable thermal conductivity, a crucible is placed thereon, and the crucible is placed in a crystal growth furnace for single crystal growth.

The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.

It should be noted that, in the foregoing embodiments, various features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various combinations that are possible in the present disclosure are not described again.

In addition, any combination of various embodiments of the present disclosure may be made, and the same should be considered as the disclosure of the present disclosure as long as it does not depart from the gist of the present disclosure.

Claims (8)

1. A crucible prop for single crystal growth, comprising:

the pillar body is internally provided with a hollow cavity which extends along the axial direction of the pillar body and is provided with an opening at the top; and

the center of the filler is provided with a through hole for a detaching tool to pass through, the filler is provided with a plurality of fillers, the fillers can be selectively placed in the hollow cavity to adjust the heat conductivity of the crucible support, the filler is in a block shape, and the outer diameter of the filler corresponds to the inner diameter of the hollow cavity to be placed in the hollow cavity in a superposed mode.

2. A crucible support for growing single crystals according to claim 1, wherein the filler includes a thermally conductive filler and a thermally insulating filler, one or both of which may be selectively placed within the hollow cavity.

3. The crucible support for single crystal growth of claim 2, wherein the thermally conductive filler and the support body are each made of a thermally conductive material, the thermally conductive material being tungsten, molybdenum, graphite, iridium, or rhenium.

4. A crucible column for growing single crystals as defined in claim 2, wherein said insulating filler is made of an insulating material, said insulating material being alumina, zirconia or mullite.

5. A crucible prop for use in growing a single crystal according to claim 1, further comprising a base on which the prop body is disposed.

6. A crucible support for growing single crystals as defined in claim 1, wherein the support body is cylindrical in configuration and the hollow cavity is cylindrical in configuration.

7. A crucible support for growing a single crystal according to claim 6, wherein the diameter of the support body is 80mm to 110mm, the inner diameter of the hollow cavity is 40mm to 55mm, and the inner diameter of the hollow cavity has a negative tolerance of 0mm to-1 mm.

8. A crucible prop for single crystal growth according to claim 1, wherein the crucible prop is a crucible prop for sapphire made by the kyropoulos method.

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