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KR20140144037A - Lighting device - Google Patents

Lighting device Download PDF

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Publication number
KR20140144037A
KR20140144037A KR20130065961A KR20130065961A KR20140144037A KR 20140144037 A KR20140144037 A KR 20140144037A KR 20130065961 A KR20130065961 A KR 20130065961A KR 20130065961 A KR20130065961 A KR 20130065961A KR 20140144037 A KR20140144037 A KR 20140144037A
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KR
South Korea
Prior art keywords
light
substrate
light source
reflector
light emitting
Prior art date
Application number
KR20130065961A
Other languages
Korean (ko)
Inventor
사다오 타카노
토모히로 삼페이
슈헤이 마츠다
Original Assignee
엘지이노텍 주식회사
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Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR20130065961A priority Critical patent/KR20140144037A/en
Publication of KR20140144037A publication Critical patent/KR20140144037A/en

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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/66Details of globes or covers forming part of the light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/68Details of reflectors forming part of the light source
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/647Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

A lighting apparatus according to an embodiment includes a substrate, a light source portion disposed on the substrate, a reflector disposed around the light source portion on the substrate and having an inner surface reflecting light emitted from the light source portion formed at an angle with the substrate, and a reflector disposed on the reflector And a cover having a predetermined distance from the light source part and having an area smaller than the light emitting area of the light source part.

Description

LIGHTING DEVICE

An embodiment relates to a lighting device.

Light emitting diodes (LEDs) are a type of semiconductor devices that convert electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, much research has been conducted to replace conventional light sources with light emitting diodes. Light emitting diodes are increasingly used as light sources for various lamps used in the interior, lighting devices such as liquid crystal display devices, electric sign boards, and street lamps .

The size of the light source, the brightness, etc., can be determined according to the country, place, and purpose of the lighting apparatus. Therefore, in order to use a light emitting device such as a light emitting diode (LED) as a light source of an illumination device, the size of the light emitting device must be adjusted to the standard used in the application in which the lighting device is used. However, since the lighting device is widely used, it is difficult to manufacture the light emitting device with a suitable standard for each application. When a light emitting device having a specific standard is used in a wide variety of light emitting devices of various sizes, a light emitting device having a small amount of use is accumulated in an inventory, resulting in a cost incurred. Particularly, when a lighting device is used for a head lamp of an automobile, a specification of a light source of a lighting device generally used is different from a standard of a light source of an automobile head lamp, and a light emitting device to be used for an automobile head lamp should be newly designed and manufactured.

SUMMARY OF THE INVENTION An object of the present invention is to provide a lighting apparatus having high luminous efficiency.

Further, another technical problem to be achieved by the embodiments is to provide a lighting device applicable to various standards.

A reflector disposed on the substrate and arranged on the substrate at a predetermined angle with respect to the substrate, the inner surface of the substrate surrounding the light source portion and reflecting light emitted from the light source portion; and a reflector disposed on the reflector, And an opening having a smaller area than the light emitting area of the light source part at a predetermined interval.

According to the lighting apparatus according to the embodiment, when the current density of the light emitting element is lowered, the light emitting efficiency is increased and the power consumption can be lowered.

According to the lighting apparatus according to the embodiment, since it is not necessary to match the size of the light emitting element to the standard applied to the lighting apparatus using the light emitting element, the existing light emitting element can be used, and the cost can be reduced.

1 is a plan view showing a first embodiment of a lighting apparatus.
2 is a plan view showing that a light emitting element is disposed on a substrate employed in the illumination apparatus shown in Fig.
3 is a sectional view in the III-III direction of the lighting apparatus shown in Fig.
4 is a graph showing the relationship between the current density and the luminous flux.
5 is a sectional view showing a second embodiment of the lighting apparatus.
6 is a cross-sectional view showing a third embodiment of the lighting apparatus.
7 is a cross-sectional view showing a fourth embodiment of the lighting apparatus.
8 is a plan view showing a fifth embodiment of the lighting apparatus.
9A is a plan view showing a sixth embodiment of the lighting apparatus.
FIG. 9B is a cross-sectional view of the illumination device shown in FIG. 9A.
Fig. 9C is a front view of the lighting apparatus shown in Fig.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. It is to be understood, however, that the appended drawings illustrate the use of the present invention in order to more easily explain the present invention, and the scope of the embodiments is not limited to the range of the accompanying drawings. You will know.

In addition, the upper or lower reference of each component is described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

In the description of the embodiments, in the case of being described as being placed on "above or below" each element, the upper (upper) or lower (lower) or under includes both two elements being directly in contact with each other or one or more other elements being disposed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view showing a first embodiment of the lighting apparatus, FIG. 2 is a plan view showing that a light source unit is arranged on a substrate employed in the illumination apparatus shown in FIG. 1, Sectional view of III-III of Fig.

1 to 3, an illumination apparatus 1000 includes a substrate 100, a light source unit 110 disposed on the substrate 100, and a light source unit 110 disposed around the light source unit 110 on the substrate 100, A reflector 120 disposed on the reflector 120 and having a predetermined distance from the light source 110 to reflect light emitted from the light source 110, And a cover 130 having an opening 131 having an area smaller than the light emitting area of the light emitting element 110.

The substrate 100 allows electrical signals to be transmitted to the light source unit 110. The substrate 100 may include a printed circuit board (PCB), a metal core PCB, a flexible PCB, and a ceramic substrate. In addition, the substrate 100 may be a COB (Chip On Board) type that can directly bond a light emitting device (LED) chip not packaged. The substrate 100 may be made of a metal material having excellent heat dissipation. Ceramics can also be used. For example, the substrate 100 is aluminum nitride (AlN), aluminum oxide (Al 2 O 3), silicon (Si), aluminum (Al), nickel (Ni), copper (Cu), silver (Ag), tin (Sn), magnesium (Mg), and a compound or oxide thereof.

In one embodiment, the surface of the substrate 100 on which the light source unit 110 is disposed may be made white, and the light emitted from the light source unit 110 may be reflected without being absorbed, thereby improving the light efficiency. Although the substrate 100 is shown as having a rectangular plate shape, it is not limited thereto and may have various shapes. For example, it may be a circular, oval or polygonal plate shape.

The light source unit 110 may convert an electrical signal into light and emit the light. The substrate 100 may have a circuit pattern (not shown) to transmit an electrical signal to the light source 110. The light source unit 110 may include a plurality of light emitting devices. The light emitting device may be a light emitting diode (LED). When the light source unit 110 includes the light emitting device, the light source unit 110 is mounted on the substrate 100 at its lower portion and connected to the substrate 100 through the wire 115, And can be transmitted through the circuit pattern and the wire 115. Although the number of the plurality of light emitting devices 110a, 110b, 110c, and 110d is shown in FIG. 2, the number and positions of the light emitting devices 110a, 110b, 110c, and 110d may be determined according to the size of the illumination device 1000.

In one embodiment, when a plurality of light emitting elements 110a, 110b, 110c, and 110d are disposed on the substrate 100, the spacing between the light emitting elements 110a, 110b, 110c, and 110d may be maintained . For example, the spacing of each of the light emitting elements 110a, 110b, 110c, and 110d may be within a range of 5 to 10 mu m. When the spacing between the light emitting elements 110a, 110b, 110c and 110d is 10 μm or more, the space formed by the substrate 100, the reflector 120, and the cover 130, Optical loss may occur. If the spacing between the light emitting elements 110a, 110b, 110c, and 110d is less than 5 占 퐉, the distance between the light emitting elements 110a, 110b, 110c, and 110d may be difficult to control and normal operation may be difficult.

The light emitting devices 110a, 110b, 110c, and 110d employed in the light source unit 110 may emit light having colors such as red, green, blue, and yellow. Further, the light emitting devices 110a, 110b, 110c, and 110d may emit ultraviolet rays. Here, the light emitting devices 110a, 110b, 110c, and 110d may be a lateral type, a vertical type, or a flip-chip type, but are not limited thereto.

The reflector 120 may be disposed around the light source unit 110 to reflect light emitted from the light source unit 110 to increase light efficiency. The reflector 120 may be disposed on the substrate 100. The reflector 120 may be disposed in various forms, for example, on the substrate 100 in the form of a ring as shown in FIG. 1, but the present invention is not limited thereto. The reflector 120 may be circular, Polygons, or combinations of various shapes. 3, the reflector 120 may be disposed such that the spacing S becomes narrower toward the upper side in the substrate 100 as viewed from the side end surface of the substrate 100. [ For example, the reflector 120 may be disposed on the substrate 100 in an inclined state within a range of 0 to 90 degrees. This makes it possible to prevent the wire 115 from being damaged by contact with the reflector 120 because the inclination direction of the reflector 120 can correspond to the inclination direction of the wire 115. When the reflector 120 has a shape that widens toward the substrate 100, the reflector 120 may have an opening 131 having a size smaller than the light emitting area of the light source 110 due to the light condensing effect. 110). ≪ / RTI > Here, the arrangement form between the reflector 120 and the substrate 100 is not limited to the above description. Further, the reflector 120 may be made of a material having high reflectance so as to increase the light efficiency. To this end, the reflector 120 may include at least one of metal, glass, and ceramic. For example, the reflector 120 may comprise aluminum oxide (Al 2 O 3 ) in ceramic.

The cover 130 may be disposed on the light source 110 and may have an opening 131 having a predetermined area. The area of the opening 131 may be smaller than the light emitting area of the light source 110. The light emitting area of the light source 110 may mean the sum of areas or areas of the light emitting devices. The area of the light emitting device may be the area of the light emitting device in a plane horizontal to the substrate 100. In addition, the light emitting area of the light source 110 may be a closed curve formed by lines connecting the outermost portions of the light emitting devices disposed on the substrate 100. For example, as shown in FIG. 2, when the light emitting area of the light source unit 110 is a quadrangle, the uppermost horizontal extended line aa 'of the light emitting element and the lowermost horizontal extended line bb' May be a closed curved surface formed by a vertical extension line cc 'on the left side of the intersecting light emitting element and a vertical extension line dd` on the right side of the light emitting element. Here, the light emitting area of the light source 110 is rectangular, but is not limited thereto, and may be formed differently depending on the arrangement of the light emitting device on the substrate 100.

The cover 130 may be formed of a material having a low light transmittance. A material having a low light transmittance may be, for example, a material having a high reflectance. The material having high reflectance may be a non-metallic material including a metallic material including silver, an alloy including silver, aluminum and the like, and an optical multilayer film (dielectric multilayer film). Further, it may be a metal oxide which may include titanium oxide, aluminum oxide, zirconium oxide, hafnium oxide and the like. Since the cover 130 having the reflector 120 and the opening 131 surrounding the light source unit 110 is disposed around the light source unit 110 in the lighting apparatus 1000 according to the present invention, The emitted light can be emitted to the outside only through the opening 131 formed in the cover 130. Accordingly, the light emitting area of the illumination device 1000 according to the present invention may correspond to the area of the opening 131. [ Therefore, the area of the opening 131 can be determined by the specification according to the use in which the illumination device 1000 is used. That is, when the size of the light emitting area is set to 1 mm horizontally and 8 mm vertically in the standard, if the size of the opening 131 is 1 mm in width and 8 mm in length, the lighting apparatus 1000 can be a standard. If the size of the light source 110 including the light emitting element is larger than the size of the opening 131, the light can be emitted only through the opening 131 So that the lighting apparatus 1000 can obtain effects meeting the standard. For example, as shown in FIG. 2, even if four light emitting devices 110a, 110b, 110c, and 110d having a size of 1.45 mm on both sides of the substrate 110 are arranged in a row Since the area of the opening 131 meets the standard, the lighting apparatus 1000 may conform to the standard. In addition, since the light emitting devices 110a, 110b, 110c, and 110d having a width of 1.45 mm and a width of 1.45 mm are widely used, there is no need to design a light emitting device corresponding to the area of the opening 131 separately.

Since the luminous efficiency of the light emitting devices 110a, 110b, 110c, and 110d is lower as the current density is lowered, the power consumption of the lighting apparatus 1000 can be lowered and the luminous efficiency and lifetime of the light emitting device can be improved . Therefore, when the light emitting area of the light source 110 is increased, the current density can be lowered and the luminous efficiency can be improved. For example, when the size of the light emitting element of the light source unit 110 is increased to increase the light emitting area in the lighting apparatus 1000, the current density can be lowered and the light emitting efficiency of the light source unit 110 can be increased up to 30% . That is, when the area of the opening 131 in the lighting apparatus 1000 is adjusted to the standard and the light emitting area of the light source 110 is made larger than the area of the opening 131, the light loss efficiency is lowered to 30% And the effect of improving the luminous efficiency can be expected comprehensively. In other words, the optical loss factor can be made to be within 30%, and the overall light extraction efficiency of the lighting apparatus 1000 is 70% or more, which is said to improve the performance of the lighting apparatus 1000 . More specifically, if the optical loss factor is less than 25% and the luminous efficiency of the lighting apparatus 1000 is 75% or more, the performance of the larger illuminating apparatus 1000 can be improved.

In one embodiment, the opening 131 of the cover 130 may be provided with a light conversion layer 140 for converting the wavelength of light emitted from the light source unit 110. When the light conversion layer 140 is disposed in the opening 131, the light conversion layer 140 is spaced apart from the light source 110 by a predetermined distance. If the light conversion layer 140 does not directly contact the light source part 110 but has a certain gap therebetween, the heat generated in the light source part 120 does not affect the light conversion layer 140 and heat resistance can be improved. Also, the luminance uniformity can be improved. The light conversion layer 140 may be formed by dispersing a light conversion material that changes the wavelength of light on a glass plate, silicon, PMMA, PC, acrylic plate, or the like. The photo-conversion layer 140 may be fixed to the cover 130 using an adhesive, and a heat-stable adhesive may be used.

In one embodiment, the reflector 120 and the cover 130 may be formed as a single body. When the reflector 120 and the cover 130 are formed as a single body, the reflector 120 and the cover 130 can be disposed through a single process, thereby attaching the cover 130 to the reflector 120 It can be omitted, and there may be a process advantage. In addition, when the reflector 120 and the cover 130 are formed as a single body, the reflector 120 and the cover 130 are separately formed, and problems such as erroneous attachment that may occur when the reflector 120 and the cover 130 are combined can be reduced.

Table 1 below shows experimental data on the luminous efficiency of the illumination device according to the reflectance of the reflector 120, the cover 130, the substrate 100, and the light emitting element of the light source part 110. The light emitted from the light emitting element of the light source unit 110 may be reflected by the reflector 120, the cover 130 and the substrate 100 and the light emitted from the light emitting element may be reflected by the reflector 120, 130, the substrate 100, and the like, may reach the surface of the light emitting device again and be reflected at the surface of the light emitting device. Also, the light source unit 110 includes four light emitting devices, and each light emitting device has an optical output of 1W. The angle between the reflective surface of the reflector 120 and the substrate 100 on which the light emitting element is disposed was set to 25 degrees. Since the light output of each of the four light emitting devices is 1W, the light output of the light source unit 110 becomes 4W. Therefore, if the amount of light reaching the opening 131 is 3 W or more, the amount of light emitted from the opening 131 may be 75% or more of the amount of light emitted from the light source 110, An increase in the light efficiency due to the reduction can compensate for the reduction in the amount of light reaching the light.

Figure pat00001

In Table 1, the average reflectance of the reflector 120, the cover 130, and the substrate 100 is referred to as package reflectance Rp and the reflectance of the light emitting device is referred to as chip reflectance Rc.

As shown in Table 1, when the package reflectance is 99%, the reflectance of the chip is 98-88%, the amount of light emitted through the opening 131 is 3.511-3.020 W, and the package reflectance is 98% When the reflectance of the chip is 98-92%, the amount of light emitted through the opening 131 reaches 3.283-3.019 W. Therefore, when the package reflectance is 98% or more, the chip reflectance is 92% or more, the package reflectance is 99% or more, and the chip reflectance is 88% or more, the amount of light emitted from the opening 131 is the light amount emitted from the light source 110 Or more.

4 is a graph showing the relationship between the current density and the luminous flux.

Referring to FIG. 4, it is disclosed that the luminous flux gradually decreases as the current density increases. For example, if the current density is 250 mA / mm 2 , the luminous flux is 1.35 and the current density is 500 mA / mm 2 , then the luminous flux is 1.00. That is, when the current density is 1/2 times the current density from 250 mA / mm 2 to 250 mA / mm 2 , the luminous flux is 1.35 times from 1.00 to 1.35. Therefore, it can be seen that when the current density is halved, the light efficiency is increased by 30% or more.

5 is a sectional view showing a second embodiment of the lighting apparatus.

5, the illumination device 5000 includes a substrate 500, a light source 510 including a light emitting device on the substrate 500, and a light source 510 formed around the light source 510 to emit light from the light source 510 And a reflector 520 that reflects the light. The cover 530 may be disposed at a predetermined distance from the light source unit 510 by the reflector 520. An opening 531 having an area smaller than the light emitting area of the light source 510 is formed in the cover 530 and a glass 540a is formed in the opening 531 to diffuse the light emitted from the light source 510 . The glass 540a may include a material capable of further improving the diffusion of light. For example, glass 540a can include argon (Ar) to enhance light diffusion. The light conversion layer 511 may be in contact with the light source unit 510. The upper surface of the light emitting device and the substrate 500 may be electrically connected to each other using the wires 515. In this case, the light conversion layer 511 may be disposed so as not to cover a part of the upper surface of the light emitting device so that the upper surface of the light emitting device and the substrate 500 are electrically connected through the wire 515, The wire 515 can be connected to the upper surface of the light emitting element which is not provided.

6 is a cross-sectional view showing a third embodiment of the lighting apparatus.

6, a lighting apparatus 6000 includes a substrate 600, a light source unit 610 formed on the substrate 600 with a light emitting element, a light source unit 610 disposed on the substrate 600 to surround the light source unit 610, And a reflector 621 covering the reflector 621. The reflector 621 may be formed to include a material having a high reflectance such as a metal, for example. The shape of the reflector 621 can be formed like a metal can, but it is not limited thereto and may be formed in various shapes. Here, the angle between the reflector 621 and the substrate 600 is 90 degrees, but it is not limited thereto and may be less than 90 degrees. An opening 631 may be formed in the upper portion of the reflector 621. The area of the opening 631 may be determined according to the size of the illumination device 6000 and the area of the opening 631 may be smaller than the area of light emission of the light source 610. A light conversion layer 640 is formed in the opening 631 so that the light efficiency of the illumination device 6000 can be improved. The light emitting device may further include a wire 615 electrically connected to the substrate 600 and the upper surface of the light emitting device.

7 is a cross-sectional view showing a fourth embodiment of the lighting apparatus.

7, the illumination device 7000 includes a substrate 700, a light source 710 formed on the substrate 700, and a light source 710 disposed on the substrate 700 to surround the light source 710, And a reflector 721 in the form of a metal can that covers the reflector 721. An opening 731 may be formed in the upper portion of the reflector 721. The area of the opening 731 may be determined according to the standard of the lighting device 7000 and the area of the opening 731 may be smaller than the light emitting area of the light source 710. A light conversion layer 740 is formed in the opening 731 to improve light efficiency. The light emitting device may further include a wire 715 electrically connected to the upper surface of the light emitting device and the substrate 700.

Here, the substrate 700 may be formed of ceramic. When the substrate 700 is formed of ceramics, it is possible to prevent the substrate 700 from being discolored due to heat generated in the light source unit 710 or the like. Examples of the ceramic material that can be used for the substrate 700 include aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), Si x O y , Si 3 N 4 , Si x N y , SiO x N y, and the like, and may include a metal oxide having a thermal conductivity of 140 w / mK or more. If the substrate 700 has low thermal conductivity among the ceramics, the heat radiation performance of the substrate 700 may be deteriorated. Accordingly, vias 701a, 701b, and 701c are formed on the substrate 700 to prevent the heat dissipation performance of the substrate 700 from being degraded, and vias 701a, 701b, and 701c are formed on the vias 701a, The heat dissipation performance can be improved by filling the material. The high thermal conductivity material may include at least one of aluminum nitride (AlN), aluminum (Al), nickel (Ni), copper (Cu), silver (Ag), tin (Sn), and magnesium (Mg). The via 701b formed in the lower portion of the light source 710 in the vias 701a, 701b and 701c may be formed so as not to penetrate the substrate 700 and may be formed in the vias 701a, 701b, The vias 701a and 701c formed on the outer periphery of the substrate 700 may be formed through the substrate 700. [

8 is a plan view showing a fifth embodiment of the lighting apparatus.

8, a lighting apparatus 8000 includes a substrate 800, a light source unit 810 including a light emitting element on the substrate 800, and a light source unit 810 formed around the light source unit 810 to emit light from the light source unit 810 And a reflector 820 that reflects the light. The reflector 820 may be disposed on the substrate 800 in the form of a triangular pyramid having an opening 831 formed thereon. The opening 831 may be formed to have an area smaller than the light emitting area of the light source unit 810. A light conversion layer 840 for changing the wavelength of light emitted from the light source unit 810 may be disposed in the opening 831. However, the present invention is not limited to this, and a glass may be disposed in the opening 831. When the glass is disposed in the opening 831, the light conversion layer may be disposed in contact with the light source portion 810. When the light is emitted from the light source unit 810, the reflected light is reflected by the reflector 820, and the path is changed to be emitted to the outside through the opening 831. At this time, if the light conversion layer 840 is disposed in the opening 831, the wavelength of the light emitted from the light source portion 810 may be changed by the light conversion layer 840.

FIG. 9A is a plan view showing a sixth embodiment of the lighting apparatus, and FIG. 9B is a sectional view taken along line b-b 'of the lighting apparatus shown in FIG. 9A. 9C is a front view of the lighting apparatus shown in Fig.

Referring to Figs. 9A to 9C, the lighting apparatus 9000 includes a light source portion 910 disposed on a substrate 900. Fig. The light source unit 910 may include four light emitting devices arranged in a 2x2 form. Also, a reflector 920 may be disposed to reflect light emitted from the light source unit 910 to improve light efficiency. The reflector 920 may be disposed on the substrate 900 so as to cover the other side surface and the upper surface except for one side where the opening 931 is formed on one side surface of one side of the light source portion 910 and the opening 931 is formed. In one embodiment, a light conversion layer 940 may be formed on one side of the reflector 920 that is not covered by the reflector 920.

Table 2 below shows experimental data on the luminous efficiency of the illuminator according to the reflectance of the reflector 920, the cover 930, the substrate 900 and the light emitting device. In addition, the light source unit 910 has been experimented such that each light emitting element arranged in 2x2 form has 1W. Since the light output of each of the four light emitting devices is 1W, the light output of the light source unit 110 becomes 4W. Accordingly, the amount of light emitted from the opening 131 may be 75% or more of the amount of light emitted from the light source 110 if the amount of light reaching the opening 131 is 3 W or more. Therefore, the increase of the light efficiency due to the reduction of the current density can compensate the reduction of the amount of light reaching the light.

Figure pat00002

In Table 2, the average reflectance of the reflector 120, the cover 130, and the substrate 100 is referred to as package reflectance Rp and the reflectance of the light emitting device is referred to as chip reflectance Rc.

As shown in Table 2, when the reflectance of the package is 99%, the reflectance of the package is 80-98%, the amount of light emitted through the opening 931 is 3.778-3.074 W, the reflectivity of the package is 98% , If the reflectance of the chip is 85-98%, the amount of light emitted through the opening 931 reaches 3.668-3.165 W, and if the reflectivity of the package is 96%, the reflectivity of the chip is 85-98% The amount of light emitted through the opening 931 is 3.462 to 3.004 W, and when the reflectance of the package is 94%, the reflectance of the chip is 90-98%, the amount of light emitted through the opening 931 is 3.272 To 3.005 W, and the reflectance of the package is 92%. If the reflectivity of the chip is 96-98%, the amount of light emitted through the opening 931 is 3.102-3.023 W. Thus, if the package reflectance is greater than or equal to 92%, the chip reflectance is greater than or equal to 96%, the package reflectance is greater than or equal to 94%, the chip reflectance is greater than or equal to 90%, the package reflectivity is greater than or equal to 96%, the chip reflectivity is greater than or equal to 85% And the chip reflectance is 85% or more, or the package reflectance is 99% or more and the chip reflectance is 80% or more, the amount of light emitted from the opening 131 may be 75% or more of the amount of light emitted from the light source 110 have.

The features, structures, effects and the like described in the embodiments are included in one embodiment of the present invention, and are not necessarily limited to one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. It will be appreciated that many variations and applications not illustrated are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: substrate 110:
115: wire 120: reflector
130: cover 131: opening
140: light conversion layer 141a: glass
1000: Lighting device

Claims (11)

Board;
A light source unit disposed on the substrate;
A reflector disposed on the substrate, the reflector being disposed around the light source unit and having an inner side reflecting light emitted from the light source unit to have a predetermined angle with the substrate; And
And a cover which is disposed on the reflector and has an opening which is spaced apart from the light source part and has an area smaller than the light emitting area of the light source part.
The method according to claim 1,
Wherein the reflector is disposed such that the distance from the side surface of the reflector toward the upper side of the substrate is smaller .
The method according to claim 1,
And a light conversion layer disposed in the opening to convert a wavelength of light emitted from the light source portion.
The method of claim 3,
Wherein the light conversion layer is formed by dispersing a light conversion material on a glass plate or silicon.
The method according to claim 1,
Wherein the substrate is a ceramic substrate.
6. The method of claim 5,
Wherein at least one via is formed in the ceramic substrate, and the via is filled with a material having higher thermal conductivity than the ceramic substrate.
The method according to claim 1,
Wherein the reflector is arranged in a ring shape on the substrate.
The method according to claim 1,
Wherein the reflector comprises at least one of metal, glass, and ceramic.
The method according to claim 1,
Wherein the cover comprises a material having a low light transmittance.
The method according to claim 1,
Wherein the reflector and the cover are formed of a single body.
11. The method according to any one of claims 1 to 10,
Wherein the light source portion includes at least one light emitting element.
KR20130065961A 2013-06-10 2013-06-10 Lighting device KR20140144037A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170009035A (en) * 2015-07-15 2017-01-25 엘지이노텍 주식회사 A light emitting device package
KR20180035563A (en) * 2016-09-29 2018-04-06 (주)에이피텍 Light source unit and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170009035A (en) * 2015-07-15 2017-01-25 엘지이노텍 주식회사 A light emitting device package
KR20180035563A (en) * 2016-09-29 2018-04-06 (주)에이피텍 Light source unit and method for manufacturing the same

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