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KR20140127099A - Method of manufacutruing semiconductor device structure - Google Patents

Method of manufacutruing semiconductor device structure Download PDF

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Publication number
KR20140127099A
KR20140127099A KR1020130045689A KR20130045689A KR20140127099A KR 20140127099 A KR20140127099 A KR 20140127099A KR 1020130045689 A KR1020130045689 A KR 1020130045689A KR 20130045689 A KR20130045689 A KR 20130045689A KR 20140127099 A KR20140127099 A KR 20140127099A
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KR
South Korea
Prior art keywords
semiconductor
semiconductor device
device structure
plate
present disclosure
Prior art date
Application number
KR1020130045689A
Other languages
Korean (ko)
Inventor
김창태
정현민
윤상원
Original Assignee
주식회사 씨티랩
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Priority to KR1020130045689A priority Critical patent/KR20140127099A/en
Publication of KR20140127099A publication Critical patent/KR20140127099A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The present disclosure relates to a method for manufacturing a semiconductor device structure which includes the steps of: fixing the position of an electrode of a semiconductor device to face a plate as a step of fixing a semiconductor device on a plate; covering the semiconductor device with an encapsulant; and attaching a rigid plate to the encapsulant on a side which is opposite to an electrode exposure side from the encapsulant.

Description

[0001] METHOD OF MANUFACUTRUING SEMICONDUCTOR DEVICE STRUCTURE [0002]

Disclosure relates generally to a method of manufacturing a semiconductor device structure, and more particularly, to a method of manufacturing a semiconductor device structure that is simple to manufacture.

Here, the semiconductor element includes a semiconductor light emitting element (e.g., a laser diode), a semiconductor light receiving element (e.g., a photodiode), a pn junction diode electric element, a semiconductor transistor, . The III-nitride semiconductor light emitting device includes a compound semiconductor layer made of Al (x) Ga (y) In (1-xy) N (0? X? 1, 0? Y? 1, 0? X + Such as SiC, SiN, SiCN, and CN, but does not exclude the inclusion of a material or a semiconductor layer of these materials.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

FIG. 1 is a diagram showing a conventional semiconductor light emitting device. The semiconductor light emitting device includes a substrate 100, a buffer layer 200, a first semiconductor layer (not shown) having a first conductivity 300, an active layer 400 for generating light through recombination of electrons and holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited, A conductive film 600 and an electrode 700 serving as a bonding pad are formed on the first semiconductor layer 300. An electrode 800 serving as a bonding pad is formed on the exposed first semiconductor layer 300. [ Here, when the substrate 100 side is placed in the package, it functions as a mounting surface.

2 is a diagram showing another example of a conventional semiconductor light emitting device (Flip Chip). A semiconductor light emitting device includes a substrate 100 (e.g., a sapphire substrate), a first semiconductor layer having a first conductivity An active layer 400 (e.g., InGaN / (In) GaN MQWs) that generates light through recombination of electrons and holes, a second semiconductor layer 400 having a second conductivity different from the first conductivity, (Ag reflective film) 901 (for example, Ag reflective film) for reflecting light onto the substrate 100 side, and an electrode film 901 (for example, a p-type GaN layer) An electrode 800 (e.g., Cr / Ni / Au) functioning as a bonding pad is formed on the first semiconductor layer 300 exposed and etched to form an electrode film 903 (e.g., Au diffusion layer) Laminated metal pads) are formed. Here, when the electrode film 903 side is placed in the package, it functions as a mounting surface. Flip chip or junction down type chips shown in FIG. 2 are superior to the lateral chips shown in FIG. 1 in heat radiation efficiency in terms of heat emission efficiency. The lateral chip must emit heat through the sapphire substrate 100 having a thickness of 80 to 180 mu m while the flip chip emits heat through the metal electrodes 901, 902 and 903 located close to the active layer 400 Because it can emit.

15 is a diagram illustrating a conventional semiconductor light emitting device package or a semiconductor light emitting device structure. The semiconductor light emitting device package includes lead frames 110 and 120, a mold 130, and a vertical semiconductor light emitting device Emitting chip, and the cavity 140 is filled with an encapsulant 170 containing the fluorescent material 160. The encapsulant 170 may be a light-emitting chip. The lower surface of the vertical semiconductor light emitting device 150 is electrically connected to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light (for example, blue light) emitted from the vertical type semiconductor light emitting device 150 excites the phosphor 160 so that the phosphor 160 makes light (for example, yellow light), and these lights (blue light + Make white light. In this case, the mold 130, the encapsulant 170, the lead frames 110 and 120, the mold 130, and the encapsulant 170 carry the vertical semiconductor light emitting device, Carrier).

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a method of fabricating a semiconductor device structure, the method comprising: positioning a semiconductor device on a plate such that the electrode of the semiconductor device faces the plate; Fixing the position; Covering the semiconductor element with an encapsulating material; And attaching a rigid plate to the encapsulant opposite the side from which the electrode is exposed from the encapsulant.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device (lateral chip)
2 is a view showing another example (Flip Chip) of a conventional semiconductor light emitting device,
Figure 3 shows an example of a method of manufacturing a semiconductor device structure in accordance with the present disclosure;
4 is a diagram illustrating an example of a method for manufacturing a flip chip package in accordance with the present disclosure;
5 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure,
6 is a diagram illustrating an example of a semiconductor device structure according to the present disclosure;
7 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
8 is a view showing another example of a semiconductor device structure according to the present disclosure,
9 is a diagram illustrating an example of the use of a semiconductor device structure in accordance with the present disclosure;
10 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
11 is a diagram showing another example of a semiconductor device structure according to the present disclosure,
12 shows another example of a semiconductor device structure according to the present disclosure,
13 is a diagram showing another example of a semiconductor device structure according to the present disclosure,
14 is a diagram showing another example of a semiconductor device structure according to the present disclosure,
15 is a view showing an example of a conventional semiconductor light emitting device package or a semiconductor light emitting device structure,
16 to 18 are views showing an example of a method of manufacturing the semiconductor device structure shown in FIG. 11,
19 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
20 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
Figs. 21 to 23 are views showing an example of a method of manufacturing the semiconductor device structure shown in Fig. 12,
24-27 are diagrams illustrating another example of a method of manufacturing a semiconductor device structure in accordance with the present disclosure,
28 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
29 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure,
30 is a view showing still another example of the semiconductor device structure according to the present disclosure,
31 is a view showing an example of a method of manufacturing the semiconductor device structure shown in FIG. 30,
32 is a view showing another example of a method of manufacturing the semiconductor device structure shown in FIG. 30;
33 and 34 are views showing modifications of the semiconductor device structure shown in FIG. 30,
35 and 36 are diagrams illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
Figure 37 illustrates another example of a method of fabricating a semiconductor device structure in accordance with the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

3 is a diagram showing an example of a method of manufacturing a semiconductor device structure according to the present disclosure. After a plate 1 is prepared, a semiconductor element 2 provided with two electrodes 80 and 90 is bonded to an adhesive 3 ) Is fixed to the plate (1). Next, the encapsulating material (4) is used to wrap the semiconductor element (2). Next, the plate 1 and the semiconductor element 2 are separated. There is no particular limitation on the material constituting the plate 1, and a material such as sapphire may be used, or a flat structure such as metal or glass may be used. By using a rigid plate such as a metal or glass, the process can be stabilized as compared with a plate (plate) having flexibility such as blue tape. There is no particular limitation on the material forming the adhesive 3, and any adhesive may be used as long as it can fix the semiconductor element 2 to the plate 1 only. As the material forming the sealing agent 3, silicone epoxy or silicone resin conventionally used in an LED package can be used. After the sealing agent 4 is formed, the separation between the semiconductor element 2 and the plate 1 can be performed by applying heat or light that can melt the adhesive 3, or by using a solvent capable of melting the adhesive 3 Do. It is also possible to use heat or light and solvent together. It is also possible to use an adhesive tape. The encapsulant 4 can be formed by conventional methods such as dispensing, screen printing, molding, spin coating, stencil, etc., and is formed by applying a photo-curing resin (UV curable resin) It is also possible. In the case where a translucent plate such as sapphire is used for the plate 1, it is also possible to irradiate light from the plate 1 side. For the sake of explanation, one semiconductor element 2 is shown on the plate 1, but a plurality of semiconductor elements 2 can be placed on the plate 1 to carry out a process. Although the semiconductor element 2 has been described as having two electrodes 80 and 90, the number of the semiconductor elements 2 is not particularly limited. For example, in the case of a transistor, it can have three electrodes.

Fig. 4 is a diagram showing an example of a method for manufacturing a flip chip package according to the present disclosure. As a semiconductor element 2, a junction down type chip is presented. As a junction down type chip, a flip chip type semiconductor light emitting element as shown in Fig. 2 can be exemplified. 2, a semiconductor light emitting device includes a first semiconductor layer 300 (e.g., an n-type GaN layer) having a first conductivity, a first semiconductor layer 300 having a first conductivity An active layer 400 (e.g., InGaN / (In) GaN MQWs) that generates light through recombination of a first conductivity and a second semiconductor layer 500 (e.g., a p-type GaN layer) (For example, an Ag reflective film), an electrode film 902 (for example, a Ni diffusion preventing film), and an electrode film 903 (for example, Au bonding layer) is formed on the first semiconductor layer 300 and an electrode 800 (e.g., Cr / Ni / Au laminated metal pad) functioning as a bonding pad is formed on the first semiconductor layer 300 exposed and etched. The semiconductor device 2 has two electrodes 80 and 90. The electrode 90 may have the same structure as the electrodes 901, 902 and 903 of FIG. 2, or may be a combination of DBR (Distributed Bragg Reflector) It is also good. The electrode 80 and the electrode 90 are electrically insulated by an insulating film 5 such as SiO 2 . The subsequent process is the same, and the encapsulating material 4 is used to wrap the semiconductor element 2. Next, the semiconductor element 2 is separated from the plate 1 and the adhesive 3.

5 is a diagram showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. A plurality of semiconductor elements 2, 2 are integrally covered with a sealing agent 4 on a plate 1. After the plate 1 is removed, it becomes easy to package the semiconductor elements 2, 2 integrally. A method of electrically connecting the semiconductor element 2 and the semiconductor element 2 will be described later. It is also possible to separate them into individual semiconductor elements 2 as in Fig. This can be achieved by separating a plurality of semiconductor elements 2, 2 from the plate 1, and then individualizing them through a process such as sawing. By using the sealing agent 4 having softness after curing, bonding with the flexible circuit board can be further enhanced.

6 is a view showing an example of a semiconductor element structure according to the present disclosure, in which the side surface 4a of the sealing agent 4 is formed to be inclined. In the case where the semiconductor element 2 is a light emitting element, the sealing agent 4 has various angular outer surfaces, so that light extraction efficiency to the outside of the package becomes high. During screen printing, the side wall 4a can be formed by inclining the screen bulkhead, and the side surface 4a can be formed by using a sharp-pointed cutter at the time of cutting.

7 shows another example of a method of manufacturing a semiconductor device structure according to the present disclosure. After the plate 1 is removed, an insulating film 6 such as SiO 2 is formed on the electrode 80 and the electrode 90, As shown in FIG. Thereafter, the external electrode 81 is connected to the electrode 80, and the external electrode 91 is formed on the electrode 90, so that the structure of the conventional package can be obtained. The external electrodes 81 and 91 may correspond to the lead frame of the conventional package. It is also possible to spread the external electrodes 81 and 91 widely to function as a reflective film. The insulating film 6 may have merely an insulating function or alternatively may have a laminated structure of SiO 2 / TiO 2 or DBR so as to reduce light absorption by the external electrodes 81 and 91. When the semiconductor element 2 includes the insulating film 5 as shown in FIG. 4, the insulating film 6 may be omitted. The deposition process and the photolithography process used for forming the insulating film 6 and the external electrodes 81 and 91 are generally used in a semiconductor chip process and are well known to those skilled in the art. By providing the external electrodes 81 and 91, mounting to the PCB, COB, and the like can be facilitated. It is also possible to provide only the insulating film 6 without the external electrodes 81 and 91, if necessary. The insulating film 6 can function not only to protect between the semiconductor element 2 and the encapsulating agent 4 but also to protect the encapsulating agent 4 from the step of forming the external electrodes 81 and 91. [ Further, the insulating film 6 may be formed of a white material so that the insulating film 6 functions as a reflecting film. For example, a white PSR (Photo Slider Regist) can be used as the insulating film 6 or coated. For example, white PSR may be screen-printed or spin-coated, and then patterned through a general photolithographic process.

FIG. 8 is a view showing another example of the semiconductor device structure according to the present disclosure, and includes a semiconductor device 2A and a semiconductor device 2B electrically connected in series. This configuration is possible by connecting the negative (-) electrode 80A of the semiconductor element 2A and the positive (+) electrode 90B of the semiconductor element 2B through the external electrode 89. Reference numeral 4 denotes an encapsulant; 6, an insulating film; 90A, a positive electrode of the semiconductor element 2A; and 80B, a negative electrode of the semiconductor element 2B. With this configuration, the electrical connection between the integrated semiconductor elements 2A and 2B can be formed through the sealing agent 4 without using the monolithic substrate. In the case of a monolithic substrate, the structure of the semiconductor element thereon is the same, but according to the method of the present disclosure, the semiconductor element 2A and the semiconductor element 2B do not have to be the same function elements. It goes without saying that the semiconductor devices 2A and 2B can be connected in parallel. In addition, the side surface 4a of the encapsulant 4 can be inclined as shown in FIG. 6, and this configuration enables a high-voltage semiconductor light emitting device package or a semiconductor light emitting device structure that can not be imagined .

9A and 9B show an example of the use of the semiconductor device structure according to the present disclosure. In the semiconductor device 2C, the lead wire 7a of the printed circuit board 7 and the electrodes 80 and 90 are directly connected, The element 2D is connected to the lead wire 7b through the external electrodes 81 and 91. The printed circuit board 7 may be a flexible circuit board.

Fig. 10 is a view showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. Fig. 10 is a view showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure, A first semiconductor layer 300 having a first conductivity, an active layer 400 generating light through recombination of electrons and holes, a second semiconductor layer having a second conductivity different from the first conductivity, (500) are grown, and electrodes (80, 90) are formed. The semiconductor element 2 is attached to the plate 1 using the adhesive 3 and then the substrate 100 is removed prior to covering with the encapsulating agent 4. The rough surface 301 are formed. The subsequent process is the same. The removal of the substrate 100 is possible by a process such as laser lift-off and the rough surface 301 is possible by dry etching such as ICP (Inductively Coupled Plasma). This enables chip-level laser lift-off.

11 shows another example of the semiconductor device structure according to the present disclosure, in which the encapsulant 4 contains a phosphor. YAG, Silicate, Nitride fluorescent material or the like can be used to emit light of a desired color.

12 shows another example of the semiconductor element structure according to the present disclosure, in which a phosphor layer 8 is formed in the encapsulating agent 4 or in the lower part of the encapsulating agent 4. [ It is also possible to form the phosphor layer 8 on the encapsulant 4. This can be formed by depositing the phosphor in the encapsulating agent 4, spin coating it separately, applying the phosphor contained in the volatile liquid, volatilizing it, leaving only the phosphor, and covering it with the encapsulating agent 4. It is possible to form a plurality of phosphor layers 8 as required.

13 shows another example of the semiconductor device structure according to the present disclosure, in which the encapsulant 4 is provided with a rough surface or protrusions 4g for enhancing the light extraction efficiency. The rough surface 4g can be formed by pressing, forming a nanoimprint, or the like. It is also possible to apply the bead material by a method such as etching, sand blasting or the like. The rough surface 4g can be formed before or after the separation of the plate 1.

Fig. 14 is a diagram showing another example of the semiconductor element structure according to the present disclosure, in which the encapsulation agent 4 is provided with a lens 4c. Preferably, the lens 4c is formed integrally with the sealing agent. Such an integral type lens 4c can be formed by a method such as compression molding.

16 to 18 are views showing an example of a method for manufacturing the semiconductor device structure shown in Fig. 11. In the state where the semiconductor elements 2 and 2 are fixed to the plate 1 by using the adhesive 3, Is covered with the encapsulant 4 containing the phosphor, that is, the phosphor layer 8. Next, as shown in Fig. 17, the plate 1 is removed and the semiconductor elements 2, 2 are separated from each other, as shown in Fig. With this method, it becomes possible to conformally coat the so-called phosphor or the phosphor layer 8 with the semiconductor elements 2, 2. It is possible to make the height (V) and the width (H) of the phosphor layer 8 the same. The conformal coating of this type (constitution of the conformal coating by removal of the encapsulant 4 or removal of the phosphor layer 8) is broadly distinguished from the conformal coating which had conventionally been applied by spin coating, screen printing, do.

Fig. 19 is a diagram showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. The semiconductor device 2, 2 manufactured in Fig. 18 is again laminated on the plate 1 And then the sealing agent 4 is applied again. It is also possible to add other phosphors and / or small particles for light scattering to the encapsulating agent (4). Unlike the related art, easy control of the shape of the interface between the phosphor layer 8 and the sealing agent 4 becomes possible. It is possible to easily control both the outer shape of the phosphor layer 8 and the outer shape control of the sealing agent 4 covering the phosphor layer 8. Conversely, it is also possible to introduce the fluorescent substance into the external encapsulant 4 and not introduce the fluorescent substance into the encapsulating material 4 inside. That is, it is also possible to make the external encapsulant 4 become the phosphor layer. In this case as well, the boundary surface and contour control of both are possible. The encapsulant 4 constituting the phosphor layer 8 and the encapsulant 4 covering the phosphor layer 8 may be the same material but may have different characteristics (refractive index, hardness, light transmittance, curing rate, etc.) It may be a substance. Thus, this embodiment can be extended to a method of manufacturing a semiconductor device structure according to the present disclosure to which two or more identical or different encapsulants are applied. In the case of having the phosphor layer 8, the semiconductor element is preferably a semiconductor light emitting element, but when the phosphor is not contained, the semiconductor element does not necessarily have to be a semiconductor light emitting element.

20 is a view showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. After forming the phosphor layer 8 as shown in Fig. 16, (8) is partly removed to form the phosphor layer (8) conformally on each of the semiconductor elements (2, 2). Thereafter, when the process according to Fig. 19 is carried out, there is an advantage that the use of the plate 1 can be reduced to one time.

21 to 23 are views showing an example of a method for manufacturing the semiconductor device structure shown in Fig. 12, unlike the method shown in Fig. 20, in which the phosphor layer 8 is not completely removed and separated, Leave it and leave it. Next, a semiconductor element structure is manufactured by covering the encapsulation agent 4 as shown in Fig. 22 and separating the semiconductor elements 2,2 as shown in Fig. It goes without saying that the sealing agent 4 may have various shapes such as the shape shown in Fig. 13, the shape shown in Fig. 14, and the like.

Figs. 24-27 show another example of a method of manufacturing a semiconductor device structure according to the present disclosure, in which the plate 1 (see Fig. 3) is removed and then the sensitizing solution 9 is applied. For example, the photosensitive liquid 9 may be made of a white PSR functioning as an insulating film 6. [ In order to expose the electrodes 80 and 90, an exposure operation is required. At this time, the electrodes 80 and 90 are used as a mask as a mask pattern without a separate mask pattern. Next, as shown in Fig. 25, light L is irradiated from above encapsulating agent 4 to expose photosensitive liquid 9, and regions 80a and 90a corresponding to electrodes 80 and 90 are exposed So that it can be removed after exposure. Fig. 26 shows a state after the photosensitive liquid 9 corresponding to the areas 80a and 90a is removed. Preferably, the encapsulant 4 does not contain a phosphor, so that the light L can be accurately transmitted to the photosensitive liquid 9. By using the electrodes 80 and 90 as masks, alignment work necessary for using a separate mask is not required, and a more accurate exposure operation becomes possible. If necessary, the external electrodes 81 and 91 are electrically connected to the electrodes 80 and 90, as shown in Fig. By constituting the photosensitive liquid 9 with a white PSR, the photosensitive liquid 9 can function as the insulating film 6 and function as a light reflecting film. In the case of a semiconductor device, it should also be formed in a light-transmitting manner as a whole. For example, in the case of a Group III nitride semiconductor device, it may be formed of a transparent semiconductor on a transparent sapphire substrate, a GaN substrate, or a SiC substrate, as shown in Fig. That is, by forming the semiconductor element 2 and the sealing agent 4 in a translucent manner, the light L used for exposure can be transmitted through them and applied to the photosensitive liquid 9.

Fig. 28 is a diagram showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. Prior to forming the photosensitive liquid 9 or the insulating film 6, external electrodes 81 and 91 are formed. In this case, the electrodes 80 and 90 and the external electrodes 81 and 91 can be used as a mask for exposure. The shape and size of the electrodes 80 and 90 are limited by the size and characteristics of the semiconductor element 2 However, since the external electrodes 81 and 91 are not limited by the semiconductor element 2, the external electrodes 81 and 91 can be freely designed as needed to form a desired pattern shape.

29 is a drawing showing another example of a method for manufacturing a semiconductor device structure according to the present disclosure, and shows a process of cutting a plurality of semiconductor elements 2,2. In the case of manufacturing the semiconductor device structure in the manner as shown in Figs. 24 to 27, in separating the semiconductor elements 2, 2 with respect to the cutting line C, The photosensitive liquid 9 to be deposited is separated together with the encapsulating agent 4. [

30 shows another example of the semiconductor device structure according to the present disclosure, in which the light reflecting surface 4b is covered with an insulating film 6. As shown in Fig. The insulating film 6 can function as a light reflecting film such as a white PSR. In this sense, in this embodiment, the insulating film 6 may be referred to as a light reflecting film. It is also possible to protect the light reflecting surface 4b with the insulating film 6 while increasing the reflection performance between the sealing material 4 and the insulating film 6 by using a material having a relatively higher refractive index than the insulating film 6 . It is also possible to constitute the insulating film 6 with a material having a lower refractive index than that of the encapsulating agent 4, but belongs to this disclosure, but deviates from the present embodiment. It is also possible to construct the light reflection film 6 by a metal film through deposition of a metal (e.g., Al, Ag, Au) instead of an insulating material.

31 is a view showing an example of a method of manufacturing the semiconductor element structure shown in Fig. 30, in which the semiconductor element 2, which is a semiconductor light emitting element, is covered with the sealing agent 4, . Next, grooves 4m are formed (by generalizing, grooves 4m are removed by forming grooves 4m) by using a blade (not shown) The electrodes 80 and 90 are exposed through the insulating film 6 through the photolithography process and the external electrodes 81 and 91 are exposed through the insulating film 6, To the electrodes 80 and 90, respectively. Next, the semiconductor element (2, 2) is separated based on the cutting line (C).

32 is a view showing another example of a method of manufacturing the semiconductor device structure shown in FIG. 30, wherein external electrodes 81 and 90 are first formed on electrodes 80 and 90 by a method such as vapor deposition or plating, The insulating film 6 is formed on the light reflecting surface 4b. The external electrodes 81 and 91 are exposed to the outside of the insulating film 6 through the photolithography process and the semiconductor elements 2 and 2 are cut with reference to the cutting line C.

33 and 34 show modifications of the semiconductor device structure shown in Fig. 30. In Fig. 33, the light reflecting surface forms one inclined surface 4b1, and in Fig. 34, the light reflecting surface has two inclined surfaces 4b1 and 4b2. Although the semiconductor elements 2 and 2 can be separated individually, a plurality of semiconductor elements 2 and 2 may be separated together.

35 and 36 are views showing still another example of a method of manufacturing a semiconductor device structure according to the present disclosure. As shown in Fig. 35, a plate 1 is attached to the side of the encapsulating material 4. Fig. The plate 1 may be attached to the encapsulant 4 in the same manner as illustrated in Fig. The plate 1 may be attached to the encapsulant 4 side either before or after separation of the plate 1 attached to the electrode 2 side in Fig. In this embodiment, it is important that the plate 1 does not have a bending property like a plate of a soft material. As shown in Fig. 36, after the plate 1 shown in Fig. 3 is removed, formation of the insulating film 6, formation of the external electrodes 81 and 91, cutting of the sealing agent 4, and / Or a photolithography process accompanied therewith. In this case, it is very important that the sealing agent 4 having a height of several millimeters at most is maintained in a flat shape. For this purpose, it is important that a rigid plate 1 be used. The plate 1 may be made of ceramics, glass, metal, engineering plastic or the like. Thickness of the plate 1 may vary depending on materials, but it is desirable to maintain proper thickness in order to prevent warpage and maintain mechanical stability And in the case of a glass substrate, 1 mm or more is sufficient. The plate 1 can be removed before or after cutting the two semiconductor elements 2, 2.

37 is a view showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure, in which the warp-free plate 1 used in the method shown in Fig. 36 is applied to the method shown in Fig. By forming the plate 1 having no warpage with a light-transmitting material (for example, glass), all of the advantages described above are achieved, and no problem occurs in the exposure process.

Various embodiments of the present disclosure will be described below.

(1) Semiconductor device structure in which the encapsulant acts as a carrier

(2) Semiconductor device structure having an encapsulation bottom separated from a plate

(3) Semiconductor device structure in which the outer surfaces of the encapsulant, except the surface on which the electrodes of the semiconductor device are located,

(4) Semiconductor device structure in which semiconductor elements are combined using an encapsulant

(5) A method of manufacturing a semiconductor device structure, comprising the steps of: positioning a semiconductor device on a plate; positioning the electrode of the semiconductor device so as to face the plate; Covering the semiconductor element with an encapsulating material; And attaching a rigid plate to the encapsulant on the opposite side of the side from which the electrode is exposed from the encapsulant.

(6) separating the encapsulant-covered semiconductor element from the plate. ≪ RTI ID = 0.0 >

(7) separating the semiconductor element covered with the encapsulant from the plate prior to the step of attaching the semiconductor element structure

(8) applying a sensitizing solution to the side of the encapsulant from which the plate is removed to expose the electrode. ≪ RTI ID = 0.0 >

(9) A method of manufacturing a semiconductor device structure, characterized in that a rigid plate is a translucent, translucent, rigid plate side to expose light to a photosensitive liquid

(10) A method of manufacturing a semiconductor device structure characterized in that the rigid plate is translucent

(11) A method of manufacturing a semiconductor device structure characterized in that the translucent, rigid plate is glass

(12) Various combinations of the examples shown in Figs. 3-14, 16-37

The method of manufacturing a semiconductor device structure according to the present disclosure makes it possible to easily manufacture a semiconductor device structure or a package.

Also, the method of fabricating another semiconductor device structure according to the present disclosure makes it possible to fabricate a structure or package in which the encapsulant acts as a carrier.

Further, according to another method of manufacturing a semiconductor device structure according to the present disclosure, a light emitting device structure or a package in which a transparent encapsulant serves as a carrier can be manufactured.

Further, according to another method of manufacturing a semiconductor device structure according to the present disclosure, a plurality of semiconductor devices can be easily electrically connected.

Further, the method of manufacturing another semiconductor device structure according to the present disclosure makes it easy to electrically connect semiconductor devices of different structures

In addition, according to another method of manufacturing a semiconductor device structure according to the present disclosure, it is possible to form a rough surface or irregularities in an encapsulating material.

Further, according to another method of manufacturing a semiconductor device structure according to the present disclosure, it is possible to stabilize the process by using a hard (hard, undeformable, inflexible or rigid) plate.

In addition, according to the method of manufacturing another semiconductor device structure according to the present disclosure, the use of a transparent plate makes it possible to stabilize the exposure process.

Plate 1 Semiconductor device 2 Adhesive 3

Claims (4)

A method of manufacturing a semiconductor device structure,
Positioning the semiconductor element on the plate, the method comprising: positioning the electrode of the semiconductor element toward the plate;
Covering the semiconductor element with an encapsulating material; And,
And attaching a rigid plate to the encapsulant opposite the side from which the electrode is exposed from the encapsulant. The method according to claim 1,
Further comprising the step of applying a sensitizing solution on the side of the encapsulant from which the plate is removed to expose the electrode. The method of claim 2,
The rigid plate is translucent,
And exposing the photosensitive liquid by irradiating light on a translucent, rigid plate side. The method according to claim 1,
The semiconductor element is a semiconductor light emitting element,
Wherein the rigid plate is translucent. ≪ RTI ID = 0.0 > 11. < / RTI >
KR1020130045689A 2013-04-24 2013-04-24 Method of manufacutruing semiconductor device structure KR20140127099A (en)

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