KR20130136128A - Light emitting device and lighting system - Google Patents

Abstract

According to the embodiment, a light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the first conductivity type semiconductor layer, a light emitting structure layer including an active layer arranged between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an electrode layer on the second conductivity type semiconductor layer; a bonding layer separated from each other on the electrode layer; a reflective layer on the bonding layer and the electrode layer; a second electrode electrically connected to the reflective layer. The bonding layer includes a fluoric metal compound.

Description

[0001] LIGHT EMITTING DEVICE AND LIGHTING SYSTEM [0002]

Embodiments relate to a light emitting device and an illumination system having the same.

A light emitting diode (LED) is a light emitting element that converts current into light. Recently, light emitting diodes have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination because the luminance gradually increases.

In recent years, high output light emitting chips capable of realizing full color by generating short wavelength light such as blue or green have been developed. By applying a phosphor that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the wavelength of the light, the light emitting diodes of various colors can be combined and a light emitting diode emitting white light can be realized Do.

The embodiment provides a light emitting device having a new structure.

The embodiment provides a light emitting device including an adhesive layer for adhesion of a reflective layer.

The embodiment provides a light emitting device including a fluorine adhesive layer in contact with a reflective layer.

The embodiment provides a light emitting device including a fluorine-based adhesive layer disposed between a semiconductor layer and a reflective layer.

The embodiment provides a light emitting device including an adhesive layer made of a fluorinated metal compound on a reflective layer of aluminum.

The light emitting device according to the embodiment may include a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure layer comprising a; An electrode layer on the second conductive semiconductor layer; An adhesive layer spaced apart from each other on the electrode layer; A reflective layer on the electrode layer and the adhesive layer; And a second electrode electrically connected to the reflective layer, wherein the adhesive layer includes a fluorinated metal compound.

The light emitting device according to the embodiment may include a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure layer comprising a; An electrode layer in a first region on the second conductive semiconductor layer; An adhesive layer on a second region on the second conductive semiconductor layer; A reflective layer adhered on the electrode layer and the adhesive layer; And a first electrode on the first conductive semiconductor layer. A conductive support member is included under the reflective layer, and the adhesive layer includes a fluorinated metal compound.

The light emitting device according to the embodiment may include a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure layer comprising a; A reflective electrode layer disposed on the electrode layer; At least one recess disposed in the light emitting structure layer and exposing a portion of the first conductive semiconductor layer; An insulating layer disposed over the reflective electrode layer and around the recess; An adhesive layer disposed on the insulating layer; A first electrode partially disposed in the recess and disposed on the adhesive layer; And a second electrode on the reflective electrode layer, wherein the first and second electrodes include a reflective layer on the adhesive layer, and the adhesive layer includes a fluorinated metal compound.

The embodiment can provide a light emitting device capable of improving adhesion with a reflective layer.

The embodiment can improve light reflectance and light extraction efficiency by improving adhesion with the reflective layer.

The embodiment can maximize the reflection efficiency of the aluminum reflective layer.

The embodiment can improve the electrical reliability of the light emitting device.

Embodiments can improve the reliability of a light emitting device and an illumination system having the same.

1 is a side cross-sectional view of a light emitting device according to the first embodiment.
FIG. 2 is a cross-sectional view taken along the AA side of the light emitting device of FIG. 1.
3 is a side cross-sectional view of a light emitting device according to the second embodiment.
4 is a side cross-sectional view of a light emitting device according to a third embodiment.
5 is a side sectional view of the light emitting device according to the fourth embodiment.
6 is a side sectional view of the light emitting device according to the fifth embodiment.
7 is a side sectional view of the light emitting device according to the sixth embodiment.
8 is a cross-sectional view taken along the BB side of the light emitting device of FIG. 7.
9 is a side cross-sectional view of a light emitting device according to a seventh embodiment.
10 is a side sectional view of the light emitting device according to the eighth embodiment.
11 is a side cross-sectional view of a light emitting device according to a ninth embodiment.
12 is a side cross-sectional view of a light emitting device according to a tenth embodiment.
13 is a side cross-sectional view of a light emitting device according to an eleventh embodiment.
14 is a view comparing the adhesion between the MgF ₂ layer and Al and Ag according to the embodiment.
15 is a graph showing the transmittance of the metal fluoride oxide according to the embodiment.
16 and 17 are side cross-sectional views illustrating a light emitting device package having a light emitting device according to an embodiment.
18 is a diagram illustrating a display device having a light emitting device or a light emitting device package according to an exemplary embodiment.
19 illustrates another example of a display device having a light emitting device or a light emitting device package according to an exemplary embodiment.
20 to 24 are views illustrating a lighting device having a light emitting device or a light emitting device package according to an embodiment.

Hereinafter, a light emitting device and a method of manufacturing the same according to the embodiment will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a side cross-sectional view of a light emitting device according to the first embodiment.

Referring to FIG. 1, the light emitting device 10 may include a substrate 11, a buffer layer 13, a low conductive layer 15, a first conductive semiconductor layer 21, an active layer 23, and a second conductive semiconductor layer. And a first electrode layer 31, an adhesive layer 33, a reflective layer 35, a first electrode 39, and a second electrode 41.

The substrate 11 may be selectively formed from a light transmissive, insulating or conductive material. For example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga At least one of ₂ O ₃ and LiGaO ₃ may be used. A plurality of protrusions may be formed on at least one of an upper surface and a lower surface of the substrate 11, and the plurality of protrusions may be formed in a stripe shape, a hemispherical shape, a dome shape through etching of the substrate 11. Or a light extraction structure such as a separate roughness. The substrate 11 may have a thickness in a range of 30 μm to 300 μm and may be removed from the light emitting device 10.

A plurality of compound semiconductor layers may be grown on the substrate 11, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), or plasma laser deposition (PLD). It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited to such equipment.

A buffer layer 13 may be formed on the substrate 11, and the buffer layer 13 may be formed of at least one layer using group II-VI or group III-V compound semiconductors. The buffer layer 13 includes a semiconductor layer using a group III-V group compound semiconductor, for example, In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y A semiconductor having a compositional formula of ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 13 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 13 may be formed to alleviate the difference in lattice constant between the substrate 11 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 13 may have a value between lattice constants between the substrate 11 and the nitride-based semiconductor layer. The buffer layer 13 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 13 may be formed in the range of 30nm to 500nm, but is not limited thereto.

A low conductive layer 15 is formed on the buffer layer 13, and the low conductive layer 15 includes an undoped semiconductor layer and has a lower electrical conductivity than the first conductive semiconductor layer 21. . The low conductive layer 15 may be implemented as a GaN-based semiconductor using a group III-V group compound semiconductor, and the undoped semiconductor layer may have low conductivity even without intentionally doping a conductive dopant. At least one or both layers of the buffer layer 13 and the low conductive layer 15 may be removed from the light emitting device 10, but is not limited thereto.

The first conductive semiconductor layer 21 may be formed on the low conductive layer 15. The first conductive semiconductor layer 21 is formed of a Group III-V compound semiconductor doped with a first conductive dopant, and is, for example, In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1, 0 Y? 1, 0? X + y? 1). The first conductive semiconductor layer 21 may be an n-type semiconductor layer. For example, when the n-type semiconductor layer is formed, the first conductive dopant is an n-type dopant, and includes Si, Ge, Sn, Se, and Te. Include.

At least one of the low conductive layer 15 and the first conductive semiconductor layer 21 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a few Å or more.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 21 and the active layer 23, and the first cladding layer may be formed of a GaN-based semiconductor to confine a carrier. It plays a role. As another example, the first cladding layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 23 is formed on the first conductive semiconductor layer 21. The active layer 23 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. The active layer 23 may be alternately disposed of a well layer and a barrier layer, and the well layer may be a well layer in which energy levels are continuous. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer is, for example, may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer. For example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + It can be formed from a semiconductor material having a compositional formula of y≤1). The pair of the well layer and the barrier layer includes, for example, at least one of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN.

The thickness of the well layer may be formed in the range of 1.5 ~ 5nm, for example may be formed in the range of 2 ~ 4nm. The thickness of the barrier layer is thicker than the thickness of the well layer and may be formed in the range of 5-30 nm, for example, may be formed in the range of 5-7 nm. The barrier layer may include an n-type dopant, but is not limited thereto. The active layer 23 may selectively emit light in the wavelength range of the ultraviolet band to the visible light band, for example, may emit a peak wavelength in the range of 420nm to 450nm.

A second cladding layer (not shown) is formed on the active layer 23, and the second cladding layer has a higher band gap than the band gap of the barrier layer of the active layer 23. It may be formed of a GaN-based semiconductor. For example, the second cladding layer may include GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a second conductive or low conductivity semiconductor layer.

A second conductive semiconductor layer 25 is formed on the second clad layer (not shown), and the second conductive semiconductor layer 25 includes a dopant of a second conductive type. The second conductive semiconductor layer 25 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, or the like. When the second conductive semiconductor layer 25 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The light emitting device 10 may be defined as a light emitting structure layer 20 including a layer structure including the first conductive semiconductor layer 21, the active layer 23, and the second conductive semiconductor layer 25. .

In the light emitting structure layer 20, the conductive types of the first conductive type and the second conductive type layers 21 and 25 may be opposite to each other. For example, the second conductive semiconductor layers 21, 25 may be an n-type semiconductor layer, and the first conductive semiconductor layer 21 may be implemented as a p-type semiconductor layer. In addition, an n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 25. The light emitting structure layer 20 may include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. The np and pn junctions have an active layer disposed between two layers, and the npn junction or pnp junction includes at least one active layer between three layers.

The first electrode layer 31, the adhesive layer 33, the reflective layer 35, the second electrode layer 35, and the second electrode 41 are disposed on the light emitting structure layer 20, and the second electrode 39 is partially disposed on the light emitting structure layer 20. ) Is placed.

The first electrode layer 31 is a current diffusion layer and may be formed of a material having transparency and electrical conductivity. The first electrode layer 31 may be formed of a transparent electrode layer having a refractive index lower than that of the compound semiconductor layer.

The first electrode layer 31 is formed on the top surface of the second conductive semiconductor layer 25 and includes at least one of metal oxide and metal nitride. The first electrode layer 31 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, and the like, and may be formed of at least one layer. For example, the first electrode layer 31 may be formed to be at least one of Al, Ag, Pd, Rh, Pt, Ir, or an alloy thin enough to transmit light. Can be.

The adhesive layer 33 may be selectively formed on the first electrode layer 31. The adhesive layer 33 may be formed in plural on the first electrode layer 31 or in a pattern having a plurality of holes.

A reflective layer 35 is formed on the adhesive layer 33 and the first electrode layer 31, and the reflective layer 35 is adhered to the adhesive layer 33. The reflective layer 35 may include silver (Ag) or aluminum (Al). For example, the reflective layer 35 may include aluminum (Al) having a higher reflectance than silver (Ag).

Here, the adhesive layer 33 includes a material for improving adhesion with aluminum, which is a material of the reflective layer 35. The adhesive layer 33 includes a fluoride metal compound, and may be formed, for example, of MxFy. Wherein M comprises at least one of a metal such as Ga, Mg, Al or a transition metal, x ranges from 1 to 3, and y can be 2 or 3. The fluorinated transition metal compound includes MgF ₂ , AlF ₃ , and GaF ₃ . Here, the increase in adhesion can be explained by Gibbs free energy, the energy of each material is -1000 kJ / mol or more, MgF ₂ is -1085.3 kJ / mol, AlF ₃ is -1425.1 kJ / mol, GaF ₃ is- 1085.3 kJ / mol.

The adhesive force requires intermolecular contact at the interface between two materials and can be described as an electrochemical bond between adhesive materials. Most of the bonds between atoms and molecules such as ionic bonds, covalent bonds, and metal bonds can be described as bond energy. The relative value of energy for the combination of Al and F becomes Gibbs energy, and it can be explained that the natural reaction occurs toward the lower energy. This is because AlF ₃ has a lower energy than MgF ₂ , so the bonding between Al and F atoms occurs naturally at the interface between MgF ₂ and Al, which can be interpreted as an increase in adhesion force.

14, it can be seen that the Ag layer is formed on the MgF ₂ layer and the Al layer is formed through the same E-beam facility. A comparison of the Gibbs energy of each material respectively _{MgF 2: -1070.3 kJ / mol,} AlF 3: -1425.1 kJ / mol, AgF: to -186 kJ / mol, Ag layer of MgF ₂ above, the Al layer on the MgF ₂ The bond strength is shown to be weak rather than forming.

Referring to FIG. 15, the fluorinated transition metal compound, which is the adhesive layer 33, has a transmittance of 80% or more, for example, a transmittance of 80% or more with respect to a wavelength of 450 nm.

Since the adhesive layer 33 has a higher adhesive strength with the aluminum reflective layer than the silver reflective layer, the adhesive layer 33 may improve the adhesive force of the reflective layer 35. As the adhesion of the reflective layer 35 is improved, the reflection efficiency may also be increased.

The adhesive layer 33 is a non-conductive material, and the refractive index thereof may be formed at a refractive index lower than that of the first electrode layer 31, and may be about 1.5 or less, for example, about 1.3.

The thickness of the adhesive layer 33 may be formed in the range of 10nm-1㎛, which may be a thickness considering the adhesive force with the reflective layer 35. The reflective layer 35 may have a higher adhesive force with the adhesive layer 33 than with the first electrode layer 31.

The second electrode layer 37 may be disposed on the reflective layer 35, and the second electrode layer 37 may be formed of a metal layer, for example, a barrier metal layer. The second electrode layer 37 may include at least one of Ti, W, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. It can be formed in a single layer or multiple layers. The second electrode layer 37 may be formed of an alloy such as TiW (Titanium Tungsten), for example, but is not limited thereto.

The second electrode 41 is disposed on the second electrode layer 37, and the first electrode 39 is disposed on the first conductive semiconductor layer 21. The first electrode 39 and the second electrode 41 are formed of Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, W, La, Ta, Ti. And their selective alloys, and may be formed in a single layer or multiple layers. In addition, the first electrode 39 and the second electrode 41 may be formed in the same metal layer structure, but is not limited thereto.

An insulating layer 43 is disposed on the second electrode layer 37, and the insulating layer 43 may also be formed on a sidewall between the first electrode 39 and the light emitting structure layer 20. The insulating layer 43 includes an insulating material or an insulating resin such as oxides, nitrides, fluorides, sulfides, and the like of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 43 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 43 may be formed as a single layer or a multilayer, but is not limited thereto.

Some light emitted from the active layer 23 is reflected by the reflective layer 35, and the light emitting device 10 is extracted in the direction of the substrate 11 and the sidewall. The light emitting device 10 is bonded on a substrate or in a package in a flip manner.

FIG. 2 is a cross-sectional view along the A-A side of the light emitting device of FIG. 1.

Referring to FIG. 2, a plurality of regions having a predetermined interval are arranged in the adhesive layer 33, and a reflective layer 35 is disposed between the regions of the adhesive layer 33. The shape of the adhesive layer 33 may include a polygonal shape, a circular shape, and a stripe shape when viewed from above.

In the following description of the embodiments, the same parts as those of FIG. 1 will be referred to the description of FIG. 1, and detailed descriptions thereof will be omitted.

3 is a view showing a light emitting device according to a second embodiment.

Referring to FIG. 3, in the light emitting device 10A, at least one recess 19 is disposed in the light emitting structure layer 20, and the at least one recess 19 is the second conductive semiconductor layer 25. ) May be formed to a depth until a portion of the first conductive semiconductor layer 21 is exposed. The plurality of recesses 19 may be spaced apart from each other, but is not limited thereto.

An insulating layer 44 is disposed around the recess 19, and a hole is formed in the insulating layer 44 disposed in the recess 19, and the first electrode 40 is formed in the hole. A portion 40A of is disposed. The first electrode 40 has a via structure to be in physical contact with the first conductive semiconductor layer 21. The insulating layer 44 includes a non-conductive metal compound, for example, a fluoride metal compound, and may be formed of, for example, MxFy. Wherein M comprises at least one of a metal such as Ga, Mg, Al or a transition metal, x ranges from 1 to 3, and y can be 2 or 3. The fluorinated transition metal compound includes MgF ₂ , AlF ₃ , and GaF ₃ .

The first electrode layer 31 is disposed on the light emitting structure layer 20, the adhesive layer 33 and the reflective layer 35 are disposed on the first electrode layer 31, and the second electrode layer 37 is disposed on the reflective layer 35. Is placed. The reflective layer 35 may cover an area of about 80% or more of the upper region of the light emitting structure layer 20, and the reflective layer 35 may have improved adhesion by the adhesive layer 33. The second electrode layer 37 may also contact the side surfaces of the first electrode layer 31 and the reflective layer 35, but is not limited thereto.

The second electrode 41 may be disposed on the second electrode layer 37, and the second electrode 41 may have an arm pattern that is divided into at least one, and may have a structure connected to each other. Here, a part of the insulating layer 44 may be further disposed between the second electrode 41 and the second electrode layer 37, but is not limited thereto. The first electrode 40 may have an upper width wider than the lower width, and the second electrode 41 may have an upper width wider than the lower width.

The upper surfaces of the first electrode 40 and the second electrode 41 are disposed on substantially the same plane on the light emitting structure layer 20, so that they can be mounted on a substrate or in a package in a flip manner.

4 is a side cross-sectional view illustrating a light emitting device according to a third embodiment.

Referring to FIG. 4, in the light emitting device, a first electrode layer, a reflective layer, and a second electrode layer are disposed on the light emitting structure layer 20. At least one recess 19 is disposed on the light emitting structure layer 20, and the insulating layer 44 is disposed from the periphery of the recess 19 to the second electrode layer 37. An adhesive layer 33A is disposed on the insulating layer 44, and the adhesive layer 33A is disposed between the insulating layer 44, the first electrode 40, and the second electrode 41. The adhesion between the electrode 40 and the second electrode 41 may be improved. The first electrode 40 and the second electrode 41 may include a reflective layer made of aluminum, and the reflective layer may be adhered to the adhesive layer 33A, and the electrode may be formed by the reflective layer made of aluminum. Light absorbed by 40 and 41 or light leaking toward electrodes 40 and 41 can be blocked.

A plurality of the first electrode 40 and the second electrode 41 may be alternately arranged, but is not limited thereto. In addition, a hole 33B is disposed in the adhesive layer 33A, and the second electrode 41 may contact the second electrode layer 44 through the hole 33B.

The reflective electrode layer 35A is disposed on the first electrode layer 31, and the second electrode layer 37 is disposed on the reflective electrode layer 35A. Since the reflective electrode layer 35A covers only the second conductive semiconductor layer 25 of the light emitting structure layer 20, light loss may occur in another region. According to the embodiment, the reflective layer adhered to the adhesive layer 33A is disposed on the lower layers of the first and second electrodes 40 and 41, thereby reducing the light loss and maximizing the reflection efficiency.

The adhesive layer 33A includes a material having enhanced adhesion to the reflective layer of aluminum, for example, a non-conductive metal compound such as a fluoride metal compound. The fluorinated metal compound may be formed of MxFy, for example. Wherein M comprises at least one of a metal such as Ga, Mg, Al or a transition metal, x ranges from 1 to 3, and y can be 2 or 3. The fluorinated transition metal compound includes MgF ₂ , AlF ₃ , and GaF ₃ .

5 is a side cross-sectional view illustrating a light emitting device according to a fourth embodiment.

Referring to FIG. 5, the light emitting device includes a light emitting structure layer 20, an adhesive layer 53, a first electrode layer 52, a reflective layer 55, a second electrode layer 56, a conductive support member 57, and a protective layer ( 54).

As illustrated in FIG. 1, the light emitting structure layer 20 includes a first conductive semiconductor layer 21, an active layer 23, and a second conductive semiconductor layer 23. Light may be extracted through the upper surface of the surface 21, that is, the surface opposite to the active layer 23. An upper surface of the first conductive semiconductor layer 21 may have a light extraction structure 21A such as an uneven pattern, but is not limited thereto.

The light emitting structure layer 20 is disposed in reverse with the light emitting structure layer of FIG. 1, which is disposed below the second electrode structure 50 on the light emitting structure layer 20 of FIG. 1. The low conductive layer, the buffer layer and the substrate can be removed. The substrate removal method may be removed by a physical method and / or a chemical method, and the low conductive layer or the buffer layer may be removed by a chemical method, but is not limited thereto.

Side surfaces of the light emitting structure layer 20 may be disposed to be inclined at a predetermined angle with respect to the bottom surface thereof, but is not limited thereto.

Below the light emitting structure layer 20, a second electrode structure 50 including a first electrode layer 52, a reflective layer 55, a second electrode layer 56, and a conductive support member 57 is disposed. The adhesive layer 53 is disposed between the reflective layer 55 and the light emitting structure layer 20, and the protective layer 54 is disposed on an inner side of the lower surface of the light emitting structure layer 20, and an outer side thereof is disposed on the light emitting structure layer 20. It may extend outwards than the side of).

The adhesive layer 53 includes a non-conductive metal compound such as a fluoride metal compound, and may be formed of MxFy, for example. Wherein M comprises at least one of a metal such as Ga, Mg, Al or a transition metal, x ranges from 1 to 3, and y can be 2 or 3. The fluorinated metal compound includes MgF ₂ , AlF ₃ , GaF ₃ .

The adhesive layer 53 corresponds to the first electrode 51 in a vertical direction, and at least a portion of the adhesive layer 53 overlaps an area of the lower surface of the first electrode 51. The adhesive layer 53 has a structure disposed in the hole of the first electrode layer 52 and may function as a current blocking layer.

An inner portion of the passivation layer 54 may contact the bottom surface of the light emitting structure layer 54, and may include at least one of a metal oxide, an insulating material, or a metal material. The protective layer 54 may include at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . It may comprise or be formed of a metal. The protective layer 54 may be formed in a loop, ring, or frame shape having a continuous or discontinuous structure along the periphery in the lower region of the light emitting structure layer 20, It does not limit to this.

The first electrode layer 52 includes an ohmic contact layer in ohmic contact with a bottom surface of the second conductive semiconductor layer 25, and the material may be a metal oxide such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, Low conductive materials such as AZO, ATO and the like or metals such as Ni and Ag may be used.

The reflective layer 55 may be disposed under the first electrode layer 52 and the adhesive layer 53, and the adhesive force may be improved by the fluorinated metal compound of the adhesive layer 53. An outer portion of the reflective layer 55 may be in contact with the protective layer 54, an outer portion of the second electrode layer 56 may be in contact, or an outer portion of the conductive support member 57 may be in contact.

The reflective layer 55 may be a metal or an alloy, for example at least one of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and combinations thereof It may be formed into a structure including a layer of. The reflective layer 267 may be formed of, for example, aluminum for adhesion to the adhesive layer 53.

A second electrode layer 56 is formed below the reflective layer 55, and the second electrode layer 56 may be used as a barrier metal or a bonding metal, and the material may be, for example, Ti, Au, Sn, Ni, It may comprise at least one of Cr, Ga, In, Bi, Cu, Ag and Ta and an optional alloy.

A conductive support member 57 is formed below the second electrode layer 56, and the conductive support member 57 includes, for example, a metal or a carrier wafer, and the material is copper (copper) or gold (Au). -gold), nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), and a carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC, etc.). . As another example, the conductive support member 57 may be implemented as a conductive sheet.

The width of the second electrode layer 56 and the conductive support member 57 of the second electrode structure 50 may be wider than the bottom surface of the light emitting structure layer 20, but is not limited thereto. In addition, the width of the reflective layer 55 is wider than the width of the light emitting structure layer 20, it can improve the light reflection efficiency.

6 is a side sectional view showing a light emitting device according to a fifth embodiment.

Referring to FIG. 6, in the light emitting device, a first electrode layer 52, an adhesive layer 53, and a protective layer 53A are disposed under the light emitting structure layer 20, and the adhesive layer 53 and the protective layer 53A are disposed. May be formed of the same material. The adhesive layer 54 corresponds to the first electrode 51 under the second conductive semiconductor layer 35 to function as a current blocking layer.

The adhesive layer 53 is disposed in one or a plurality of holes of the first electrode layer 52. The thickness of the first electrode layer 52 may be thicker than the thickness of the adhesive layer 53, but is not limited thereto.

The passivation layer 53A is disposed along the outer periphery of the reflective layer 55 around the lower surface of the light emitting structure layer 20.

A reflective layer 55 is disposed below the adhesive layer 53 and the protective layer 53A, and the reflective layer 55 contacts the first electrode layer 52, and the adhesive layer 53 and the protective layer 53A. ) Can improve the adhesion.

The adhesive layer 53 and the protective layer 53A include a non-conductive metal compound, for example, a fluoride metal compound, and may be formed of, for example, MxFy. Wherein M comprises at least one of a metal such as Ga, Mg, Al or a transition metal, x ranges from 1 to 3, and y can be 2 or 3. The fluorinated metal compound includes MgF ₂ , AlF ₃ , GaF ₃ .

7 is a side cross-sectional view illustrating a light emitting device according to a sixth embodiment, and FIG. 8 is a cross-sectional view taken along the line B-B of FIG. 7.

Referring to FIG. 7, in the light emitting device, a first electrode layer 52 is disposed below the light emitting structure layer 20, and an adhesive layer 53 and a protective layer 53A are disposed below the first electrode layer 52. . The adhesive layer 53 and the protective layer 53A may be formed of the same material, and include, for example, a non-conductive metal compound such as a fluoride metal compound. For example, the fluorinated metal compound may include MgF ₂ , AlF ₃ , GaF ₃ .

The protective layer 53A may be spaced apart from the side surface of the light emitting structure layer 20 and the reflective layer 55. Accordingly, the side surface of the light emitting structure layer 20 can be protected.

The reflective layer 55 is in contact with the lower surface of the first electrode layer 52, the adhesive layer 53, and the reflective layer 53A, and at least a portion thereof protrudes from the lower surface of the adhesive layer 53 to be in contact with the first electrode layer 52. .

An insulating layer 59 may be disposed on a side surface of the light emitting structure layer 20, and a portion of the insulating layer 59 may be disposed on a portion of an upper surface of the light emitting structure layer 20.

Referring to FIG. 8, the adhesive layer 53 may be spaced apart from each other in a plurality of regions, and a portion of the reflective layer 55 is disposed between the plurality of regions. The protective layer 53A may be formed in a continuous loop, ring, or frame shape along the outer periphery of the reflective layer 55. The protective layer 53A may be formed in a discontinuous shape, but is not limited thereto.

9 is a side cross-sectional view illustrating a light emitting device according to a seventh embodiment.

Referring to FIG. 9, the light emitting device 100 includes a light emitting structure layer 135, a first electrode structure 150 disposed under the light emitting structure layer 135, and a plurality of light emitting structure layers 135. A second electrode structure having a first recess 141, an insulating layer 161, and a contact electrode 171 disposed under the light emitting structure layer 135 and partially disposed in the first recess 141. 170, and a first electrode 151.

The light emitting device 100 includes a plurality of compound semiconductor layers such as LEDs using compound semiconductors of Group II-VI or Group III-V elements, and the LEDs emit light such as blue, green, or red. The LED may be a visible light band or UV LED. The emission light of the LED may be implemented using various semiconductors within the technical scope of the embodiment, but is not limited thereto.

The light emitting structure layer 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130. The thickness of the first conductive semiconductor layer 110 may be formed at least thicker than the thickness of the second conductive semiconductor layer 130 or the active layer 120.

The first conductive semiconductor layer 110 includes at least two layers, for example, a first semiconductor layer 111 and a second semiconductor layer 113 under the first semiconductor layer 111.

The first semiconductor layer 111 and the second semiconductor layer 113 may be a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN. It may include at least one of, AlGaAs, GaP, GaAs, GaAsP, AlGaInP. Doping concentrations of the first conductive dopant of the first semiconductor layer 111 and the second semiconductor layer 113 may be the same or different. For example, the doping concentration of the first conductive dopant added to the first semiconductor layer 111 may be higher than the doping concentration of the first conductive dopant added to the second semiconductor layer 113. Accordingly, the first semiconductor layer 111 may diffuse the current supplied by the second semiconductor layer 113.

In addition, the semiconductor material of the first semiconductor layer 111 and the second semiconductor layer 113 may be the same or different. The first semiconductor layer 111 and the second semiconductor layer 113 may be formed of the same material, thereby preventing damage to quality. In addition, the first semiconductor layer 111 and the second semiconductor layer 113 may be formed of different materials to improve light extraction efficiency. For example, the first semiconductor layer 111 may be formed of a material having a lower refractive index than the second semiconductor layer 113 to improve light extraction efficiency.

At least one of the first semiconductor layer 111 and the second semiconductor layer 113 may have a superlattice structure using at least two different materials. For example, the GaN / AlGaN pair may be formed in two or more cycles, or the GaN / AlGaN / InGaN pair may be disposed in two or more cycles, but the present invention is not limited thereto.

An upper surface of the first conductive semiconductor layer 110 may be formed as a flat surface or may be formed of a light extraction structure 112 such as an uneven structure. The uneven structure has a side cross-sectional shape at least one of a hemispherical shape, polygonal shape, horn shape, columnar shape, and also includes a regular or irregular size or spacing. The light extraction structure may change the critical angle of light incident on the upper surface of the first conductive semiconductor layer 110 to improve light extraction efficiency. The light extracting structure of the first conductive semiconductor layer 110 may be formed in an entire region or in a partial region, but is not limited thereto.

An active layer 120 may be formed under the first conductive semiconductor layer 110, and the second conductive semiconductor layer 130 may be formed under the active layer 120. The first and second conductive semiconductor layers 110 and 130 are semiconductor layers having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It can be formed as. At least one side surface of the light emitting structure layer 135 may be formed to be perpendicular to or inclined with respect to the bottom surface of the light emitting structure layer 135.

Different first and second electrode structures 150 and 170 are disposed under the light emitting structure layer 135 to supply power to the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130. Will be supplied. The first and second electrode structures 150 and 170 overlap each other in the vertical direction.

The first electrode structure 150 is electrically connected to the second conductive semiconductor layer 130, and the second electrode structure 170 is electrically connected to the first conductive semiconductor layer 110.

The first electrode structure 150 includes a first electrode layer 148, a reflective layer 152, and a second electrode layer 154, and the first electrode layer 148 is disposed under the light emitting structure layer 135. The second conductive semiconductor layer 130 is in ohmic contact with the lower surface of the second conductive semiconductor layer 130, the reflective layer 152 is in contact with the bottom of the first electrode layer 148 to reflect the light incident through the first electrode layer 148 The second electrode layer 154 is disposed under the reflective layer 152 and supplies power supplied from the first electrode 151 to the reflective layer 152.

The first electrode layer 148 includes at least one conductive material, and may be formed of a single layer or multiple layers. The first electrode layer 148 may have an ohmic characteristic and be disposed in a layer under the second conductive semiconductor layer 130 or may be in contact with a pattern having a plurality of holes. The material of the first electrode layer 148 may include at least one of a metal, a metal oxide, and a metal nitride material. The first electrode layer 148 includes a translucent material, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), and indium aluminum zinc (AZO). oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / It may include at least one of IrOx / Au, and Ni / IrOx / Au / ITO, Pt, Ni, Au, Rh, and Pd. The first electrode layer 148 is formed of a material having a transmittance of 50% or more with respect to the wavelength at which the transmittance is incident.

In addition, the first electrode layer 148 is formed of one or a plurality of layers of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a material composed of two or more alloys thereof. Can be.

An adhesive layer 153 spaced apart from each other is disposed below the first electrode layer 148, and a reflective layer 152 is disposed below the adhesive layer 153. The adhesive layer 153 includes a fluoride metal compound, and may be formed of, for example, MxFy. Wherein M comprises at least one of a metal such as Ga, Mg, Al or a transition metal, x ranges from 1 to 3, and y can be 2 or 3. The fluorinated transition metal compound includes MgF ₂ , AlF ₃ , and GaF ₃ . Here, the increase in adhesion can be explained by Gibbs free energy, the energy of each material is -1000 kJ / mol or more, MgF ₂ is -1085.3 kJ / mol, AlF ₃ is -1425.1 kJ / mol, GaF ₃ is- 1085.3 kJ / mol.

The reflective layer 152 includes a metal, for example, one or more of materials consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and alloys of two or more thereof. It can be formed in layers. The reflective layer 152 is a material having a reflectance of 50% or more with respect to the wavelength at which the incident light, and may be disposed of aluminum metal having excellent adhesion to the adhesive layer 153.

The width of at least one of the first electrode layer 148 and the reflective layer 152 may be equal to or greater than the width of the bottom surface of the light emitting structure layer 135.

A second electrode layer 154 is disposed below the reflective layer 152, and the second electrode layer 154 includes a metal and has a good electrical conductivity. For example, Sn, Ga, In, Bi, Cu, Ni Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si and at least one of these optional alloys. The second electrode layer 154 may function as a current diffusion layer. The second electrode layer 154 includes a contact portion 155 disposed closer to the second conductive semiconductor layer 130 than other regions, and the contact portion 155 includes the second conductive semiconductor layer 130. ) May be in contact with the bottom surface. A portion of the contact portion 155 of the second electrode layer 154 protrudes outwardly from the side surface of the light emitting structure layer 135 and is in contact with the bottom surface of the first electrode 151. The contact portion 155 of the second electrode layer 154 may be in contact with side surfaces of the first electrode layer 148 and the reflective layer 152. The first electrode structure 150 electrically connects between the first electrode 151 and the second conductive semiconductor layer 130.

The second electrode structure 170 includes at least one of the third electrode layer 172, the fourth electrode layer 176, and the conductive support member 178. The third electrode layer 172 may include at least one of a metal, a metal oxide, and a metal nitride, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), and indium zinc tin (IZTO). oxide), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt , Au, Hf and the material consisting of two or more of these alloys may be formed of one layer or a plurality of layers.

The third electrode layer 172 includes a plurality of contact electrodes 171, and the plurality of contact electrodes 171 protrude from the third electrode layer 172 in the direction of the first conductive semiconductor layer 110. do. The contact electrode 171 passes through the first electrode structure 150, the second conductive semiconductor layer 130, and the active layer 120 to form a first semiconductor layer of the first conductive semiconductor layer 110. The bottom surface 115 of the 111 is in ohmic contact. The center of the contact electrode 171 protrudes in the vertical direction with respect to the first electrode structure 150, and its circumferential surface is connected to a surface perpendicular to the inclined surface. The contact electrode 171 may have a circular or polygonal shape when viewed from above, but is not limited thereto.

An upper surface of the contact electrode 171 of the third electrode layer 172 may be disposed between the upper surface of the active layer 120 and the upper surface of the first conductive semiconductor layer 110. The lower surface 115 of the first semiconductor layer 111 to which the contact electrode 171 of the third electrode layer 172 contacts is Ga-face, and may have a flat structure.

The insulating layer 161 electrically insulates the contact electrode 171 of the third electrode layer 172 from another semiconductor layer. For example, the insulating layer 161 and a portion 162 may be formed of the third electrode layer 172, the first conductive semiconductor layer 110, the active layer 120, the second conductive semiconductor layer 130, And the first electrode structure 150 to block electrical contact.

The insulating layer 161 is formed on the circumferential surface of the first recess 141 formed in the first electrode structure 150 and the light emitting structure layer 135, and is disposed in the first recess 141. The circumference of the contact electrode 171 is insulated. In addition, the protection part 163 of the insulating layer 161 may be disposed on the side surface of the contact part 155 of the second electrode layer 154.

The contact electrodes 171 of the first electrode layer 172 may be plural and disposed to be spaced apart from each other to diffuse a current.

A fourth electrode layer 176 is disposed below the first electrode layer 172, and a conductive support member 178 is disposed below the fourth electrode layer 176. The fourth electrode layer 176 includes at least one metal layer or conductive layer, and includes a barrier metal and / or a bonding metal. The material of the fourth electrode layer 176 is, for example, Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al-Si, Ag-Cd, Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu-Si, Ag-Cd-Cu, Cu-Sb, Cd-Cu, Al-Si-Cu, Ag-Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au- Cu, Au-Ag-Cu, Cu-Cu2 O, Cu-Zn, Cu-P, Ni-B, Ni-Mn-Pd, Ni-P, Pd-Ni, and may include at least one I do not. The fourth electrode layer 176 may have a thickness of about 5 μm to about 9 μm, but is not limited thereto.

The conductive support member 178 includes a conductive substrate. The conductive support member 178 is a base substrate or a conductive support member, and implemented with at least one of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten (Cu-W). Can be. In addition, the conductive support member 178 may be implemented as a carrier wafer, such as a substrate such as Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN. Alternatively, the conductive support member 178 may be implemented as a conductive sheet. The conductive support member 178 may be formed to 30 ~ 300㎛, it is not limited thereto.

A light extraction structure 112 may be disposed on an upper surface of the first semiconductor layer 111, and the light extraction structure 112 may include an uneven pattern. An insulating layer 190 may be disposed on the surface of the light emitting structure layer 135, and the insulating layer 190 may be formed of an insulating material, and a part 192 of the light of the first semiconductor layer 111 may be formed. The extraction structure 112 may be formed in a concave-convex pattern, but is not limited thereto.

10 is a side sectional view showing a light emitting device according to an eighth embodiment. Some configurations of the eighth embodiment will be referred to the embodiments disclosed above.

Referring to FIG. 10, the bottom surface 116 of the first semiconductor layer 113 may be formed as a rough surface and is in contact with the contact electrode 171. The rough surface may improve the contact area with the contact electrode 171 and may change the critical angle of incident light to improve light extraction efficiency.

The first electrode 158 may be connected to the connection part 157, and a part 157A of the connection part 157 may be connected to the contact part 155 of the second electrode layer 154. The first electrode 158 is disposed on the first conductive semiconductor layer 110, and the first electrode 158 is in contact with the top surface of the insulating layer 190. By disposing the first electrode 158 on the first conductive semiconductor layer 110, the distance between the outer sidewall of the chip and the outer sidewall of the light emitting structure layer 135 may be reduced compared to FIG. 9. Accordingly, the area of the active layer 120 can be maximized compared to the chip size.

11 is a side cross-sectional view illustrating a light emitting device according to a ninth embodiment. Some configurations of the ninth embodiment will be referred to the embodiments disclosed above.

Referring to FIG. 11, the light emitting device includes a light emitting structure layer 235, a first electrode structure 250 disposed under the light emitting structure layer 235, and a plurality of first ribs in the light emitting structure layer 235. The second electrode structure 270 having a recess 241, an insulating layer 261, and a contact electrode 271 disposed under the light emitting structure layer 235 and partially disposed in the first recess 241. And the first electrode 251 disposed in the partial region 237.

The light emitting structure layer 235 includes a first conductive semiconductor layer 210, an active layer 220, and a second conductive semiconductor layer 230 having a first semiconductor layer 211 and a second semiconductor layer 213. Include. A third semiconductor layer 205 including at least one of a buffer layer and an undoped semiconductor layer may be disposed on the light emitting structure layer 235, but is not limited thereto.

The insulating layer 290 may be formed on the surface of the light emitting structure layer 235, and a part 292 may be formed in a rough surface.

The first electrode structure 250 includes a first electrode layer 248, a reflective layer 252, and a second electrode layer 254, and has a plurality of holes between the first electrode layer 248 and the reflective layer 252. The adhesive layer 253 is disposed. The second electrode structure 270 includes at least one of the third electrode layer 272, the fourth electrode layer 274, and the conductive support member 278. A portion 262 of the insulating layer 261 is disposed between the first and second electrode structures 250 and 270 to insulate each other. The contact electrode 271 of the third electrode layer 272 is disposed in the first recess 241 of the light emitting structure layer 235, and the contact electrode 271 is a second recess of the insulating layer 261. 243).

12 is a side cross-sectional view illustrating a light emitting device according to a tenth embodiment. Some configurations of the tenth embodiment will be referred to the embodiments disclosed above.

Referring to FIG. 12, the light emitting device includes a light emitting structure layer 335, a first electrode structure 350 disposed under the light emitting structure layer 335, and a plurality of first ribs in the light emitting structure layer 335. A third electrode layer 372 having a recess 341, an insulating layer 361, and a contact electrode 371 disposed under the light emitting structure layer 335 and partially disposed in the first recess 341. And a first electrode 351 in the partial region 337.

The light emitting structure layer 335 may include a first conductive semiconductor layer 310, an active layer 320, and a second conductive semiconductor layer 330 having a first semiconductor layer 311 and a second semiconductor layer 313. Include. A light extracting structure such as an uneven pattern may be formed on an upper surface of the first semiconductor layer 311.

The first electrode structure 350 may include a first electrode layer 348, a reflective layer 352, and a conductive support member 355, and the first electrode layer 348 may include an ohmic material. The adhesive layer 353 according to the embodiment is disposed between the first electrode layer 348 and the reflective layer 352.

The third electrode layer 372 includes a contact electrode 371, and is in contact with the first semiconductor layer 311 by the contact electrode 371. The first electrode 355 is in contact with the contact portion of the second electrode layer 372.

The insulating layer 361 is disposed in the first recess 341 and covers the circumference of the contact electrode 371. In addition, a part 362 of the insulating layer 361 insulates the third electrode layer 372 from the first electrode structure 350.

13 is a side sectional view showing a light emitting device according to an eleventh embodiment. Some configurations of the eleventh embodiment will be referred to the embodiments disclosed above.

Referring to FIG. 13, the light emitting device includes a light emitting structure layer 435, a first electrode structure 450 disposed under the light emitting structure layer 435, and a plurality of first ribs in the light emitting structure layer 435. Second electrode structure 470 having a recess 441, an insulating layer 461, and a contact electrode 471 disposed under the light emitting structure layer 435, and partially disposed in the first recess 441. And the first electrode 451 disposed in the partial region 437.

The light emitting structure layer 435 may include a first conductive semiconductor layer 410 having an first semiconductor layer 411 and a second semiconductor layer 413, an active layer 420, and a second conductive semiconductor layer 430. Include.

The first electrode structure 450 includes a first electrode layer 448, a reflective layer 452, and a second electrode layer 454, and the contact portion 455 of the second electrode layer 454 is a light emitting structure layer 435. It is arrange | positioned at the recessed part 437 arrange | positioned at the center area | region of the. The recessed portion 437 is a region where the light emitting structure layer 435 is etched, and a contact portion 455 of the second electrode layer 454 is disposed below the recessed portion 437, and is disposed on the contact portion 455. The first electrode 451 is disposed. An insulating layer 490 is disposed around the partial region 437 of the light emitting structure layer 435 to block contact with inner sidewalls of the light emitting structure layer 435.

The adhesive layer 453 disclosed above is disposed between the first electrode layer 448 and the reflective layer 452 to improve the adhesion of the reflective layer 452.

The second electrode structure 470 includes at least one of the third electrode layer 472 and the conductive support member 476. A portion 462 of the insulating layer 461 is disposed between the first and second electrode structures 450 and 470 to insulate each other. The contact electrode 471 of the third electrode layer 472 is disposed in the first recess 441 of the light emitting structure layer 435, and is insulated from inner side surfaces of the light emitting structure layer 435.

The light emitting device as described above may be mounted on a board after being packaged or mounted on a board. Hereinafter, a light emitting device package or a light source module having the light emitting device of the embodiment (s) disclosed above will be described.

14 is a cross-sectional view of a light emitting device package according to the embodiment.

Referring to FIG. 14, the light emitting device package 500 may include a body 511, a first lead frame 515 and a second lead frame 517 disposed on the body 511, and the body 511. A light emitting device 501 according to an embodiment disposed and electrically connected to the first lead frame 515 and the second lead frame 517, and a molding member 519 surrounding the light emitting device 501. do.

The body 511 may include a conductive substrate such as silicon, a synthetic resin material such as PPA, a ceramic substrate, an insulating substrate, or a metal substrate (eg, MCPCB). The body 511 may have an inclined surface 512A formed around the light emitting device 501 by the cavity structure. The body 511 includes, but is not limited to, a concave cavity 512 with an open top.

First and second lead frames 515 and 517 and the light emitting element 501 are disposed in the cavity 512 of the body 511, and the first lead frame 515 and the second lead frame 517 are disposed in the cavity 512. The gaps 514 are electrically separated from each other. The light emitting device 501 may be mounted on the first and second lead frames 515 and 517 as bonding members 521 and 523. The bonding members 521 and 523 may be formed of a conductive paste such as solder, but are not limited thereto.

Power is provided to the light emitting device 501. The light emitting device 501 illustrates an example in which the light emitting devices shown in FIGS. 1, 3, and 4 are mounted in a flip manner, and the light emitting device having the vertical electrode structure shown in FIG. 5 includes a first lead frame 515. ) And may be connected to the second lead frame 517 by a connecting member such as a wire.

The first and second lead frames 515 and 517 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), It may include at least one of platinum (Pt), tin (Sn), silver (Ag), phosphorus (P). In addition, the first and second lead frames 515 and 517 may be formed to have a multilayer structure, but the embodiment is not limited thereto. The thicknesses of the first and second lead frames 515 and 517 may be 0.3 mm to 1.5 mm, for example, 0.3 mm to 0.8 mm.

The molding member 519 may include a resin material such as silicon or epoxy, and may surround the light emitting device 501 to protect the light emitting device 501. In addition, the molding member 519 may include a phosphor to change the wavelength of light emitted from the light emitting device 501. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor.

A lens may be disposed on the molding member 519, and the lens may be implemented to be in contact with or not in contact with the molding member 519. The lens may have a concave or convex shape.

15 is another example of a light emitting device package having a light emitting device according to the embodiment.

Referring to FIG. 15, the light emitting device package includes a support member 611; A light emitting element 601 according to the embodiment on the support member 611; A reflection member 625 disposed on the support member 611 and disposed around the light emitting element 611; And a phosphor mixed layer 619 to which the phosphor disposed on the light emitting element 611 is added.

The support member 611 may be a resin-based printed circuit board (PCB), a silicon-based such as silicon (silicon) or silicon carbide (silicon carbide (SiC)), a ceramic-based such as aluminum nitride (AlN), or polyphthal It may be formed of at least one of a resin series such as amide (polyphthalamide (PPA)), a liquid crystal polymer (PCB), and a metal core PCB (MCPCB) having a metal layer on the bottom thereof, but is not limited thereto.

The support member 611 may include a first metal layer 615, a second metal layer 617, a first connection member 616, a second connection member 618, a first lead portion 615A, and a second lead portion ( 617A). The first metal layer 615 and the second metal layer 617 are spaced apart from each other on the support member 611. The first lead part 615A and the second lead part 617A are disposed to be spaced apart from each other under the support member 611. The first connection member 616 may be disposed inside or on the first side surface of the support member 611, and connects the first metal layer 615 and the first lead portion 615A to each other. The second connection member 618 may be disposed inside or on the second side surface of the support member 611 and connect the second metal layer 617 and the second lead part 617A to each other.

The first metal layer 615, the second metal layer 617, the first lead part 615A, and the second lead part 617A may be formed of a metal material, for example, titanium (Ti), copper (Cu), or nickel ( Ni, gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), or a selective alloy thereof It may be formed of a single metal layer or a multilayer metal layer.

The first connection member 616 and the second connection member 618 include at least one of a via, a via hole, and a through hole.

The light emitting device 601 is bonded to the first metal layer 615 by the bonding member 621, and is bonded to the second metal layer 617 by the bonding member 623. The light emitting device 601 may be bonded to the first metal layer 617 and the second metal layer 623 by a flip method or bonded by wire. The bonding members 621 and 623 may be formed of a conductive paste such as solder, but are not limited thereto.

The light emitting device 601 is a device according to an embodiment, and may selectively emit light in a range of visible light to ultraviolet light, for example, UV (Ultraviolet) LED chip, red LED chip, blue LED chip, green LED chip, It may optionally include a colored LED chip, such as a yellow green LED chip. Heat generated from the light emitting element 601 may be conducted through the support member 611.

The reflective member 625 is disposed around the light emitting device 601, and may be formed of a silicon-based material such as silicon or silicon carbide (SiC), a ceramic-based material such as aluminum nitride (AlN), and an epoxy. , Polyphthalamide (PPA), such as resin-based, may be formed of at least one of the liquid crystal polymer (Liquid Crystal Polymer), but is not limited to these materials. The reflective member 625 covers the circumference of the light emitting device 601 to reflect the light emitted from the light emitting device 601. The reflective member 625 may be a reflective wall, but is not limited thereto.

A diffusion agent such as SnO ₂ , ZnO, Ta ₂ O _{5 ,} TiO ₂ , Al ₂ O _{3 , or} SiO ₂ may be added to the reflective member 625 _, but is not limited thereto.

The phosphor layer 619 may include a phosphor added in silicon or epoxy, and the phosphor may include at least one of a red phosphor, a green phosphor, a blue phosphor, and a yellow phosphor. The phosphor may be selectively formed among, for example, YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials.

A lens may be disposed on the phosphor layer 619, but is not limited thereto.

Although the package of the embodiment is illustrated and described in the form of a top view, it is implemented in a side view to improve the heat dissipation, conductivity, and reflection characteristics as described above. After packaging, the lens may be formed or adhered to the resin layer, but is not limited thereto.

<Lighting system>

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device as shown in FIGS. 16 and 17 and a lighting device as shown in FIGS. 18 to 22. , An electronic signboard, and the like may be included.

16 is an exploded perspective view of a display device according to an exemplary embodiment.

16, a display device 1000 according to the embodiment includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041 and a display panel 1061 on the optical sheet 1051 and the light guide plate 1041 and the light source module 1031 and the reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light source module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light source module 1031 includes at least one light source module 1031 and may directly or indirectly provide light from one side of the light guide plate 1041. The light source module 1031 includes a substrate 1033 and a light emitting device or a light emitting device package 1035 according to the embodiment disclosed above, wherein the light emitting device or light emitting device package 1035 is on the substrate 1033. It can be arrayed at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 1035 may be mounted on the substrate 1033 such that the light emitting surface of the light emitting device package 1035 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 1035 may directly or indirectly provide light to the light-incident portion, which is one surface of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

17 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 17, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 1124 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 1124 may be defined as a light source module 1060. The bottom cover 1152, at least one light source module 1060, and the optical member 1154 may be defined as a light unit 1150. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto. The light source module 1060 includes a substrate 1120 and a plurality of light emitting devices or light emitting device packages 1124 arranged on the substrate 1120.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methyl methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light source module 1060, and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1060.

18 to 20 are views illustrating a lighting apparatus according to an embodiment.

18 is a perspective view from above of the lighting apparatus according to an embodiment, FIG. 19 is a perspective view from below of the lighting apparatus illustrated in FIG. 18, and FIG. 20 is an exploded perspective view of the lighting apparatus illustrated in FIG. 18.

18 to 20, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. It may include. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 is reflected on the inner surface of the cover 2100 to reflect the light returned to the light source module 2200 side again toward the cover 2100. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may include a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside to provide the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

21 and 22 are views illustrating another example of the lighting apparatus according to the embodiment.

FIG. 21 is a perspective view of a lighting device according to an embodiment, and FIG. 22 is an exploded perspective view of the lighting device shown in FIG. 21.

21 and 22, the lighting apparatus according to the embodiment may include a cover 3100, a light source unit 3200, a radiator 3300, a circuit unit 3400, an inner case 3500, and a socket 3600. Can be. The light source unit 3200 may include a light emitting device or a light emitting device package according to the embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110. The light source unit 3200 and the member 3350 can be inserted through the opening 3110. [

The cover 3100 may be coupled to the heat discharging body 3300 and surround the light source unit 3200 and the member 3350. The light source part 3200 and the member 3350 may be shielded from the outside by the combination of the cover 3100 and the heat discharging body 3300. The coupling between the cover 3100 and the heat discharging body 3300 may be combined through an adhesive, or may be combined by various methods such as a rotational coupling method and a hook coupling method. The rotation coupling method is a method in which the cover 3100 is coupled with the heat discharging body 3300 by the rotation of the cover 3100 in such a manner that the thread of the cover 3100 is engaged with the thread groove of the heat discharging body 3300 In the hook coupling method, the protrusion of the cover 3100 is inserted into the groove of the heat discharging body 3300, and the cover 3100 and the heat discharging body 3300 are coupled.

The cover 3100 is optically coupled to the light source unit 3200. Specifically, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200. The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor on the inside / outside or inside to excite the light from the light source unit 3200.

The inner surface of the cover 3100 may be coated with a milky white paint. Here, the milky white paint may include a diffusing agent for diffusing light. The surface roughness of the inner surface of the cover 3100 may be larger than the surface roughness of the outer surface of the cover 3100. This is for sufficiently scattering and diffusing light from the light source part 3200.

The cover 3100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 3100 may be a transparent material that can be seen from the outside of the light source unit 3200 and the member 3350, and may be an invisible and opaque material. The cover 3100 may be formed, for example, by blow molding.

The light source unit 3200 is disposed on the member 3350 of the heat sink 3300 and may be disposed in a plurality of units. Specifically, the light source portion 3200 may be disposed on at least one of the plurality of side surfaces of the member 3350. The light source 3200 may be disposed at an upper end of a side surface of the member 3350.

In FIG. 19, the light source unit 3200 may be disposed on three side surfaces of the six side surfaces of the member 3350. However, the present invention is not limited thereto, and the light source portion 3200 may be disposed on all the sides of the member 3350. The light source unit 3200 may include a substrate 3210 and a light emitting device 3230. The light emitting device 3230 may be disposed on one side of the substrate 3210.

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape. The substrate 3210 may be a printed circuit pattern on an insulator. For example, the substrate 3210 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . &Lt; / RTI &gt; In addition, it is possible to use a Chips On Board (COB) type that can directly bond the LED chip unpacked on the printed circuit board. In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface efficiently reflects light, for example, white, silver, or the like. The substrate 3210 may be electrically connected to the circuit unit 3400 housed in the heat discharging body 3300. The substrate 3210 and the circuit portion 3400 may be connected, for example, via a wire. The wire may pass through the heat discharging body 3300 to connect the substrate 3210 and the circuit unit 3400.

The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .

The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.

The heat discharging body 3300 may be coupled to the cover 3100 to dissipate heat from the light source unit 3200. The heat discharging body 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330. A member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. An upper surface 3310 of the heat discharging body 3300 can be engaged with the cover 3100. The upper surface 3310 of the heat discharging body 3300 may have a shape corresponding to the opening 3110 of the cover 3100.

A plurality of radiating fins 3370 may be disposed on the side surface 3330 of the heat discharging body 3300. The radiating fin 3370 may extend outward from the side surface 3330 of the heat discharging body 3300 or may be connected to the side surface 3330. The heat dissipation fin 3370 may increase the heat dissipation area of the heat dissipator 3300 to improve heat dissipation efficiency. Here, the side surface 3330 may not include the radiating fin 3370.

The member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. The member 3350 may be integral with the top surface 3310 or may be coupled to the top surface 3310. The member 3350 may be a polygonal pillar. Specifically, the member 3350 may be a hexagonal column. The hexagonal column member 3350 has an upper surface, a lower surface, and six sides. Here, the member 3350 may be a circular column or an elliptic column as well as a polygonal column. When the member 3350 is a circular column or an elliptic column, the substrate 3210 of the light source portion 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six sides of the member 3350. The light source unit 3200 may be disposed on all six side surfaces, or the light source unit 3200 may be disposed on some of the six side surfaces. In FIG. 18, the light source unit 3200 is disposed on three side surfaces of the six side surfaces.

The substrate 3210 is disposed on a side surface of the member 3350. The side surface of the member 3350 may be substantially perpendicular to the upper surface 3310 of the heat discharging body 3300. Therefore, the substrate 3210 and the top surface 310 of the heat sink 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is to receive the heat generated from the light source 3200 quickly. The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn) Or the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics are lighter than metals and have the advantage of having unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the supplied power to the light source unit 3200. The circuit unit 3400 supplies the converted power to the light source unit 3200. The circuit unit 3400 may be disposed on the heat discharging body 3300. Specifically, the circuit unit 3400 may be housed in the inner case 3500 and stored in the heat discharging body 3300 together with the inner case 3500. The circuit unit 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410.

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may be in the shape of an oval or polygonal plate. Such a circuit board 3410 may be one in which a circuit pattern is printed on an insulator. The circuit board 3410 is electrically connected to the substrate 3210 of the light source unit 3200. The electrical connection between the circuit board 3410 and the substrate 3210 may be connected by wire, for example. The wires may be disposed inside the heat discharging body 3300 to connect the circuit board 3410 and the substrate 3210. The plurality of components 3430 include, for example, a DC converter for converting AC power supplied from an external power source to DC power, a driving chip for controlling the driving of the light source 3200, An electrostatic discharge (ESD) protection device, and the like.

The inner case 3500 houses the circuit portion 3400 therein. The inner case 3500 may have a receiving portion 3510 for receiving the circuit portion 3400. The receiving portion 3510 may have a cylindrical shape as an example. The shape of the accommodating portion 3510 may vary depending on the shape of the heat discharging body 3300. The inner case 3500 may be housed in the heat discharging body 3300. The receiving portion 3510 of the inner case 3500 may be received in a receiving portion formed on the lower surface of the heat discharging body 3300.

The inner case 3500 may be coupled to the socket 3600. The inner case 3500 may have a connection portion 3530 that engages with the socket 3600. The connection portion 3530 may have a threaded structure corresponding to the thread groove structure of the socket 3600. The inner case 3500 is an insulator. Therefore, electrical short circuit between the circuit portion 3400 and the heat discharging body 3300 is prevented. For example, the inner case 3500 may be formed of plastic or resin.

The socket 3600 may be coupled to the inner case 3500. Specifically, the socket 3600 may be engaged with the connection portion 3530 of the inner case 3500. The socket 3600 may have a structure such as a conventional conventional incandescent bulb. The circuit portion 3400 and the socket 3600 are electrically connected. The electrical connection between the circuit part 3400 and the socket 3600 may be connected via a wire. Accordingly, when external power is applied to the socket 3600, the external power may be transmitted to the circuit unit 3400. The socket 3600 may have a screw groove structure corresponding to the screw thread structure of the connection part 3550.

The embodiment may be implemented as a light source module by arranging a package in which a light emitting device is packaged on the substrate, or as a light source module by arranging and packaging a light emitting device as shown in FIG. 1 on the substrate.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

10, 100:
11,111: substrate
13: buffer layer
15: low conducting layer
21,110,210,310,410: first conductive semiconductor layer
23,120,220,320,420: active layer
25,130,230,330,430: second conductive semiconductor layer
31,37,52,56,148,248: electrode layer
33,33A, 53,153,253: adhesive layer
35,55,152,252: reflective layer
39,40,51,151,158: first electrode
41: second electrode
49,43,44: insulation layer
50,170,270,372,470: second electrode structure
54: protective layer
150,250,350,450: first electrode structure

Claims (12)

A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
An electrode layer on the second conductive semiconductor layer;
An adhesive layer spaced apart from each other on the electrode layer;
A reflective layer on the electrode layer and the adhesive layer; And
A second electrode electrically connected to the reflective layer,
The adhesive layer is a light emitting device containing a fluorinated metal compound. A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
An electrode layer in a first region on the second conductive semiconductor layer;
An adhesive layer on a second region on the second conductive semiconductor layer;
A reflective layer on the electrode layer and the adhesive layer;
A first electrode on the first conductive semiconductor layer; And
A conductive support member below the reflective layer,
The adhesive layer is a light emitting device containing a fluorinated metal compound. A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
An electrode layer on the second conductive semiconductor layer;
A reflective electrode layer disposed on the electrode layer;
At least one recess disposed in the light emitting structure layer and exposing a portion of the first conductive semiconductor layer;
An insulating layer disposed over the reflective electrode layer and around the recess;
An adhesive layer disposed on the insulating layer;
A first electrode partially disposed in the recess and disposed on the adhesive layer; And
A second electrode on the reflective electrode layer,
The first and second electrodes include a reflective layer on the adhesive layer,
The adhesive layer is a light emitting device containing a fluorinated metal compound. 4. The method according to any one of claims 1 to 3,
The adhesive layer includes a compound having a composition formula of MxFy, wherein x is in the range of 1-3, y is 2 or 3, and M is at least one metal. 4. The method according to any one of claims 1 to 3,
The adhesive layer is MgF ₂ , AlF ₃ , GaF ₃ Light emitting device comprising at least one of. The light emitting device of claim 5, wherein the reflective layer comprises aluminum metal. The light emitting device of claim 2, wherein the adhesive layer is disposed to correspond to the first electrode. The light emitting device of claim 2, further comprising a protective layer disposed between a bottom surface of the light emitting structure layer and the reflective layer. The light emitting device of claim 3, wherein the protective layer comprises a fluorinated metal compound. The light emitting device of claim 3, wherein the adhesive layer is further disposed between the first electrode and the insulating layer. The light emitting device according to any one of claims 1 to 3, wherein the thickness of the adhesive layer includes a range of 10 nm-1 μm. The light emitting device of claim 1, wherein the first conductive semiconductor layer comprises an n-type semiconductor layer, and the second conductive semiconductor layer comprises a p-type semiconductor layer.

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