KR20120004876A - Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system - Google Patents

Abstract

PURPOSE: A light emitting device, a method for fabricating the light emitting device, a light emitting device package and a lighting system are provided to improve photonic efficiency by arranging an optical guide member and a diffusion sheet in an optical progressive path. CONSTITUTION: An active layer(112) is formed under a first conductive semiconductor layer(111). A second conductive semiconductor layer(113) is formed under the active layer. A first connection electrode(132) is penetrated from one part of the first conductive semiconductor layer to the second conductive semiconductor layer. A second connecting electrode(142) passes through a part of the second conductive semiconductor layer. A first electrode(121) contacting the first connection electrode of the second conductive semiconductor layer is formed. The second electrode(122) contacting with the second connecting electrode is formed under the second conductive semiconductor layer.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM}

Embodiments relate to a light emitting device, a light emitting device manufacturing method, a light emitting device package and a light emitting system.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps.

Therefore, many researches are being made to replace the existing light sources with light emitting diodes, and the use of light emitting devices as light sources for lighting devices such as various lamps, liquid crystal displays, electronic signs, and street lamps that are used indoors and outdoors is increasing. to be.

The embodiment provides a light emitting device having a new structure, a light emitting device manufacturing method, a light emitting device package, and a light emitting system.

The embodiment provides a light emitting device, a light emitting device manufacturing method, a light emitting device package, and a light emitting system that do not require wire connection.

The light emitting device according to the embodiment may include a first conductive semiconductor layer, an active layer formed below the first conductive semiconductor layer, a second conductive semiconductor layer formed below the active layer, and a portion of the first conductive semiconductor layer from the second conductive semiconductor layer. A first connection electrode penetrating to the second connection electrode, a second connection electrode through which a part of the second conductive semiconductor layer penetrates, a first electrode formed under the second conductive semiconductor layer and in contact with the first connection electrode An anodization film formed under the second conductive semiconductor layer and formed under the second electrode and the second conductive semiconductor layer in contact with the second connection electrode, and insulates the first electrode substrate from the second electrode substrate. It includes.

A light emitting device package according to an embodiment includes a body, a first lead frame and a second lead frame installed on the body, and a light emitting device connected to the first lead frame and the second lead frame, wherein the light emitting device is a first conductive semiconductor. A layer, an active layer formed under the first conductive semiconductor layer, a second conductive semiconductor layer formed under the active layer, a first connection electrode penetrating from a portion of the first conductive semiconductor layer to the second conductive semiconductor layer, and the second A portion of the conductive semiconductor layer is formed under the second connection electrode and the second conductive semiconductor layer, and is formed under the first electrode and the second conductive semiconductor layer in contact with the first connection electrode. A second electrode in contact with a second connection electrode and the second conductive semiconductor layer, and an anodization film formed to insulate the first electrode from the second electrode; A first electrode may be connected to the first lead frame, and the second electrode may be connected to the second lead frame.

The light emitting system according to the embodiment includes a light emitting module including a substrate and a light emitting device package installed on the substrate, wherein the light emitting device package includes a body, a first lead frame and a second lead frame, and the first lead frame installed on the body. And a light emitting device connected to the first lead frame and the second lead frame, wherein the light emitting device includes a first conductive semiconductor layer, an active layer formed under the first conductive semiconductor layer, a second conductive semiconductor layer formed under the active layer, and the second conductive frame. A first connection electrode penetrating from a portion of the first conductive semiconductor layer to the second conductive semiconductor layer, a second connection electrode penetrating a portion of the second conductive semiconductor layer, and a lower portion of the second conductive semiconductor layer; A first electrode in contact with a first connection electrode, a second electrode formed under the second conductive semiconductor layer, and in contact with the second connection electrode; And an anodization layer formed under the semiconductor layer to insulate the first electrode and the second electrode, wherein the first electrode is connected to the first lead frame, and the second electrode is the second lead frame. It can be connected with.

In the method of manufacturing a light emitting device according to the embodiment, forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, and penetrates from the second conductive semiconductor layer to a predetermined portion of the first conductive semiconductor layer. Forming a first connection electrode to be formed; forming a second connection electrode penetrating to a predetermined portion of the second conductive semiconductor layer; removing the growth substrate; and forming an aluminum substrate under the second conductive semiconductor layer. Forming and separating the aluminum substrate into a first electrode and a second electrode by selectively anodizing the aluminum substrate.

The embodiment can provide a light emitting device having a new structure, a light emitting device manufacturing method, a light emitting device package, and a light emitting system.

The embodiment can provide a light emitting device, a light emitting device manufacturing method, a light emitting device package, and a light emitting system that do not require wire connection.

1 is a view illustrating a light emitting device according to an embodiment
2 to 10 illustrate a method of manufacturing a light emitting device according to an embodiment.
11 is a side cross-sectional view of a light emitting device package including a light emitting device according to the embodiment;
12 illustrates a backlight unit including a light emitting device package according to an embodiment.
13 is a view illustrating a lighting device including a light emitting device package according to an embodiment

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

1 is a view illustrating a light emitting device according to an embodiment.

Referring to FIG. 1, the light emitting device 100 according to the embodiment may include a first conductive semiconductor layer 111, an active layer 112 formed under the first conductive semiconductor layer 111, and a lower portion of the active layer 112. The first conductive electrode 132 and the second conductive semiconductor layer 113 penetrating from a portion of the second conductive semiconductor layer 113 and the first conductive semiconductor layer 111 to the second conductive semiconductor layer 113. A portion of the second connection electrode 142 through which a portion of the second electrode 142 penetrates, the second insulating layer 114 formed below the second conductive semiconductor layer 113, and the second conductive semiconductor layer 113. A first electrode 121 in contact with the first connection electrode 132, a second electrode 122 formed under the second conductive semiconductor layer 113, and in contact with the second connection electrode 142; An anode oxide layer 123 is formed under the second conductive semiconductor layer 113 and insulates the first electrode 121 and the second electrode 122.

The first conductive semiconductor layer 111, the active layer 112, and the second conductive semiconductor layer 113 may be sequentially formed under a growth substrate (not shown).

The growth substrate may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP and GaAs, and is removed after growth of the semiconductor layer.

Compound semiconductor of Group III-V elements doped with the first conductive semiconductor layer 111 first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs , GaAsP, AlGaInP and the like. When the first conductivity type semiconductor layer 110 is an N type semiconductor layer, the first conductivity type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 111 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 112 is formed under the first conductive semiconductor layer 111 and may include any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure. The active layer 112 may be formed of a well layer and a barrier layer, for example, an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer, using a compound semiconductor material of Group III-V elements.

A clad layer may be formed between the active layer 112 and the first conductive semiconductor layer 111 or between the active layer 112 and the second conductive semiconductor layer 113, and the clad layer may be an AlGaN-based semiconductor. Can be formed.

The second conductive semiconductor layer 113 is formed under the active layer 112, and is a compound semiconductor of Group III-V group elements doped with a second conductivity type dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. When the second conductive semiconductor layer 113 is a P-type semiconductor layer, the second conductive dopant includes a P-type dopant such as Mg and Zn. The second conductive semiconductor layer 113 may be formed as a single layer or a multilayer, but is not limited thereto.

Meanwhile, the light emitting device 100 includes a first connection electrode 132 and a second connection electrode 142. The first connection electrode 132 is formed in the first via hole 131, and the first via hole 131 is a part of the first conductive semiconductor layer 111 from the bottom of the second conductive semiconductor layer 113. It can be formed up to.

A first insulating layer 133 is formed in the first via hole 131, and the first insulating layer 133 extends from a lower end of the second conductive semiconductor layer 113 to a part of the first conductive semiconductor layer 111. It may be formed around the first connection electrode 132. Accordingly, the first connection electrode 132 is insulated from the active layer 132 and the second conductive semiconductor layer 133 and is connected to the first conductive semiconductor layer 113. The first insulating layer 133 may be selected from insulating materials such as SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, and the like.

The second connection electrode 142 is formed in the second via hole 141, and the second via hole 141 is formed to a predetermined portion of the second conductive semiconductor layer 113. Here, the first via hole 131 and the second via hole 141 may be formed by, for example, laser drilling or an etching process, but is not limited thereto.

Here, the first connection electrode 132 and the second connection electrode 142 may use a conductive metal, for example, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag and Au Any one or two or more of them may be formed of a mixed material. In addition, the elements of the conductive metal of the first and second connection electrodes 132 and 142 may not be the same. In addition, one or more first connection electrodes 132 or second connection electrodes 142 may be formed in the semiconductor light emitting device.

The first electrode 121 and the second electrode 122 are formed under the second conductive semiconductor layer 113. In addition, an anodization layer 123 is formed between the first electrode 121 and the second electrode 122 to electrically insulate the first electrode 121 from the second electrode 122. do. The first electrode 121 and the second electrode 122 may be formed of aluminum or a metal material containing aluminum as a main component, and the anodic oxide film 123 may be Al ₂ O ₃ , which is an insulating material.

The anodic oxide film 123 that separates the first electrode 121 and the second electrode 122 through insulation is formed by selectively anodizing a region to be separated from the aluminum substrate. The anodic oxide film 123 may be formed by fabricating a jig and directly anodizing, or may be formed by anodizing a partially exposed area after masking a desired pattern shape.

The first electrode 121 and the second electrode 122 are electrically separated by the anodic oxide film 123. Upper or lower surfaces of the first electrode 121 and the second electrode 122 may be formed on the same plane.

Meanwhile, a second insulating film 114 is formed between the second conductive semiconductor layer 113, the first electrode 121, the second electrode 122, and the anodic oxide film 123 to form the second conductive semiconductor layer ( 113 may be connected to both the first electrode 121 and the second electrode 122 to prevent the short circuit.

The phosphor layer 150 may be formed on the first conductive semiconductor layer 111. The phosphor layer 150 may be coated by screen printing or may be formed as a photo luminescent film (PLF).

The phosphor layer 150 may include phosphors of at least one color among phosphors such as yellow phosphors, green phosphors, and red phosphors.

Hereinafter, a method of manufacturing the light emitting device 100 according to the embodiment will be described in detail. However, the content overlapping with the above description will be omitted or briefly described.

2 to 10 are views illustrating a method of manufacturing a light emitting device according to the embodiment.

Referring to FIG. 2, a growth substrate 110 is prepared. For example, the growth substrate 110 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.

Referring to FIG. 3, the first conductive semiconductor layer 111, the active layer 112, the second conductive semiconductor layer 113, and the second insulating layer 114 are sequentially stacked on the growth substrate 110. The first conductive semiconductor layer 111, the active layer 112, and the second conductive semiconductor layer 113 may include, for example, metal organic chemical vapor deposition (MOCVD) and chemical vapor deposition (CVD). ), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and the like. It does not limit to this.

Meanwhile, a buffer layer and / or an undoped nitride layer (not shown) may be formed between the first conductive semiconductor layer 111 and the growth substrate 110 to alleviate the lattice constant difference.

Referring to FIG. 4, a portion of the first via hole 131 and the second conductive semiconductor layer 113 penetrating from the second conductive semiconductor layer 113 to a predetermined portion of the first conductive semiconductor layer 111. The second via hole 141 may be formed to pass through. The first via hole 131 and the second via hole 141 may be formed by, for example, laser drilling or etching, but are not limited thereto.

Referring to FIG. 5, a first insulating layer 133 may be formed around the first via hole 131 from the second conductive semiconductor layer 113 to a part of the first conductive semiconductor layer 111. The first insulating layer 133 may be formed by, for example, a deposition method such as electron beam deposition, sputtering, or PECVD, but is not limited thereto.

After the first insulating layer 133 is grown around the first via hole 131 by the deposition method as described above, the unnecessary insulating layer may be partially removed.

Referring to FIG. 6, a first connection electrode 132 is formed by filling a conductive metal in the first via hole 131 on which the first insulating layer 133 is formed, and in the lower portion of the second via hole 141. The second connection electrode 142 is formed by filling the metal.

The first connection electrode 132 is formed in the first via hole 131 from a lower portion of the second conductive semiconductor layer 113 to a part of the first conductive semiconductor layer 111 and formed in the first conductive semiconductor layer 111. Electrically connected.

The second connection electrode 142 is formed in the second via hole 141 from a lower portion of the second conductive semiconductor layer 113 to a part of the second conductive semiconductor layer 113, and thus formed in the second conductive semiconductor layer 113. Electrically connected. The conductive metal may be formed of any one or two or more of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au.

Referring to FIG. 7, the growth substrate 110 is removed. The growth substrate 110 may be removed by, for example, at least one of a laser lift off (LLO), a chemical etching method (CLO, chemical lift off), or a physical polishing method. It is not limited to. Next, an aluminum substrate 120 is formed under the second conductive semiconductor layer 113. The aluminum substrate 120 may be aluminum or a metal material mainly composed of aluminum.

In FIG. 7, the growth substrate 110 is removed before the aluminum substrate 120 is formed under the second conductive semiconductor layer 113, but is not limited thereto. FIGS. 8 and 9 will be described later. After the manufacturing process of the growth substrate 110 may be removed.

Referring to FIG. 8, a mask pattern 155 for electrode separation is formed on the aluminum substrate 120. Specifically, a mask pattern 155 exposing a predetermined area A is formed on the bottom surface of the aluminum substrate 120. The predetermined region A corresponds to a region where an anodization film for separating the aluminum substrate 120 into the first electrode 121 and the second electrode 122 is to be formed. The electrode separation mask pattern 155 may be made of a photoresist or a metal such as Ti or Au, but is not limited thereto.

Referring to FIG. 9, anodization film 123 is formed by selectively anodizing the aluminum substrate 120 using the electrode separation mask pattern 155. Since the anodic oxide film 123 is made of Al ₂ O ₃ , which is an insulator, the anodization layer 123 separates the aluminum substrate 120 into the first electrode 121 and the second electrode 122.

Thereafter, the electrode separation mask pattern 155 is completely removed by a strip process or the like.

Here, the first electrode 121 and the second electrode 122 separated by the anodization film 123 contact and electrically connect to the first connection electrode 132 and the second connection electrode 142, respectively. do.

Referring to FIG. 10, a phosphor layer 150 may be formed on the first conductive semiconductor layer 111. The phosphor layer 150 may form, for example, a liquid resin material in which phosphors are mixed by screen printing. The phosphor layer 150 may be formed on the first conductive semiconductor layer 111 to have a uniform thickness.

The phosphor layer 150 may include phosphors of at least one color among phosphors such as yellow phosphors, green phosphors, and red phosphors.

11 is a side cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 11, the body 200, the first lead frame 201 and the second lead frame 202 installed on the body 200, and the first lead frame installed on the body 200 are provided. 201 and a light emitting device 100 electrically connected to the second lead frame 202, and a molding member 300 surrounding the light emitting device 100.

The body 200 may include a silicon material, a synthetic resin material, or a metal material, and may have a cavity having a side surface formed with an inclined surface.

The first lead frame 201 and the second lead frame 202 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead frame 201 and the second lead frame 202 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

Meanwhile, the first electrode 121 of the light emitting device 100 is connected to the first lead frame 201, and the second electrode 122 of the light emitting device 100 is connected to the second lead frame 202. Accordingly, the voltage applied to the first lead frame 201 may be applied to the first electrode 121 connected to the first lead frame 201 and the first connection electrode 132 connected to the first electrode 121. It is applied to the first conductive semiconductor layer 111 through. In addition, the voltage applied to the second lead frame 202 is provided through the second electrode 122 connected to the second lead frame 202 and the second connection electrode 142 connected to the second electrode 122. It is applied to the second conductive semiconductor layer 113. Therefore, in the present embodiment, it is possible to provide a light emitting device and a light emitting device package in which wire connection is unnecessary.

12 is a view illustrating a backlight unit including a light emitting device package according to an embodiment. However, the backlight unit 1100 of FIG. 12 is an example of a light emitting system, and is not limited thereto.

Referring to FIG. 12, the backlight unit 1100 may be disposed on a bottom cover 1140, a light guide member 1120 disposed in the bottom cover 1140, and at least one side or a bottom surface of the light guide member 1120. The light emitting module 1110 may be included. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom cover 1140 may be formed in a box shape having an upper surface open to accommodate the light guide member 1120, the light emitting module 1100, and the reflective sheet 1130, and may be formed of metal or resin. Can be. However, the present invention is not limited thereto.

The light emitting module 1110 may include a plurality of light emitting device packages 600 mounted on the substrate 700. The plurality of light emitting device packages 600 provides light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom cover 1140, thereby providing light toward at least one side of the light guide member 1120. .

However, the light emitting module 1110 may be disposed under the light guide member 1120 in the bottom cover 1140 to provide light toward the bottom surface of the light guide member 1120. This may be variously modified according to the design of the backlight unit 1100.

The light guide member 1120 may be disposed in the bottom cover 1140. The light guide member 1120 may surface-light the light provided from the light emitting module 1110 and guide the light guide member to a display panel (not shown).

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be, for example, an acrylic resin such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), a cyclic olefin copolymer (COC), or a polycarbonate (PC). It may be formed of one of polyethylene naphthalate resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. In this case, the diffusion sheet 1150 evenly diffuses the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. At this time, the light emitted from the light collecting sheet is light that is randomly polarized. The luminance rising sheet can increase the degree of polarization of light emitted from the light collecting sheet. The light collecting sheet can be, for example, a horizontal or / and vertical prism sheet. In addition, the brightness rising sheet may be, for example, a dual brightness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing phosphors.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the lower surface of the light guide member 1120 toward the exit surface of the light guide member 1120. The reflective sheet 1130 may be formed of a resin having good reflectance, for example, PET, PC, poly vinyl chloride, resin, or the like, but is not limited thereto.

13 is a view illustrating a lighting apparatus including a light emitting device package according to an embodiment. However, the lighting device 1200 of FIG. 5 is an example of a light emitting system, but is not limited thereto.

Referring to FIG. 13, the light emitting system 1200 includes a case body 1210, a light emitting module 1230 installed in the case body 1210, and a connection terminal installed in the case body 1210 and receiving power from an external power source. 1220.

The case body 1210 is preferably formed of a material having good heat dissipation, for example, may be formed of a metal or a resin.

The light emitting module 1230 may include a substrate 700 and at least one light emitting device package 600 mounted on the substrate 700.

The substrate 700 may be a circuit pattern printed on the insulator, for example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 700 may be formed of a material that efficiently reflects light, or the surface may be formed of a color in which the light is efficiently reflected, for example, white, silver, or the like.

At least one light emitting device package 600 may be mounted on the substrate 700.

Each of the light emitting device packages 600 may include at least one light emitting diode (LED). The light emitting device may include a colored light emitting device for emitting colored light of red, green, blue or white color, and a UV light emitting device for emitting ultraviolet light (UV, UltraViolet).

The light emitting module 1230 may be arranged to have a combination of various light emitting devices to obtain color and luminance. For example, the white light emitting device, the red light emitting device, and the green light emitting device may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a traveling path of light emitted from the light emitting module 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module 1230 may be finally viewed as white light after passing through the fluorescent sheet. do.

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. The connection terminal 1220 is coupled to the external power source by a socket, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by wiring.

In the light emitting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a path of the light emitted from the light emitting module to obtain a desired optical effect.

As described above, the light emitting system may have excellent light efficiency and characteristics by including a light emitting device package having improved light efficiency and emitting uniform light.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

111: first conductive semiconductor layer 112: active layer
113: second conductive semiconductor layer 121: first electrode
122: second electrode 123: anodic oxide film
131 and 141: first and second via holes 132 and 142: first and second connection electrodes
150: phosphor layer

Claims (17)

A first conductive semiconductor layer;
An active layer formed under the first conductive semiconductor layer;
A second conductive semiconductor layer formed under the active layer;
A first connection electrode penetrating from a portion of the first conductive semiconductor layer to the second conductive semiconductor layer;
A second connection electrode penetrating to a part of the second conductive semiconductor layer;
A first electrode formed under the second conductive semiconductor layer and in contact with the first connection electrode;
A second electrode formed under the second conductive semiconductor layer and in contact with the second connection electrode; And
A light emitting device formed under the second conductive semiconductor layer, the light emitting device comprising an anodization film to insulate the first electrode and the second electrode. The method of claim 1,
And the first electrode and the second electrode are made of aluminum or a metal material mainly composed of aluminum. The method of claim 1,
And a first insulating layer formed around the first connection electrode and electrically insulating the active layer, the second conductive semiconductor layer, and the first connection electrode. The method of claim 1,
The light emitting device further comprises a phosphor layer formed on the first conductive semiconductor layer. The method of claim 1,
The anodic oxide film is Al ₂ O ₃ Light emitting device. Body;
A first lead frame and a second lead frame installed on the body; And
A light emitting device connected to the first lead frame and the second lead frame;
The light emitting device penetrates from the first conductive semiconductor layer, the active layer formed under the first conductive semiconductor layer, the second conductive semiconductor layer formed under the active layer, and a portion of the first conductive semiconductor layer to the second conductive semiconductor layer. A first electrode formed under the second connection electrode and the second conductive semiconductor layer and penetrating to a part of the second conductive semiconductor layer and in contact with the first connection electrode, the second conductive semiconductor It is formed under the layer, the second electrode in contact with the second connection electrode and the second conductive semiconductor layer formed below, and comprises an anodization film to insulate the first electrode and the second electrode,
The first electrode is connected to the first lead frame, the second electrode is a light emitting device package is connected to the second lead frame. The method of claim 6,
A light emitting device package comprising a phosphor in a resin layer covering the light emitting device located in the body. The method of claim 6,
The light emitting device package further comprises a phosphor layer formed on the first conductive semiconductor layer. In the light emitting system,
The light emitting system includes a light emitting module including a substrate and a light emitting device package installed on the substrate.
The light emitting device package includes a body, a first lead frame and a second lead frame installed on the body, and a light emitting device connected to the first lead frame and the second lead frame, wherein the light emitting device comprises: a first conductive semiconductor layer; An active layer formed under the first conductive semiconductor layer, a second conductive semiconductor layer formed under the active layer, a first connection electrode penetrating from a portion of the first conductive semiconductor layer to the second conductive semiconductor layer, and the second conductive semiconductor layer A second electrode formed under the second connection electrode and the second conductive semiconductor layer penetrating to a portion of the first electrode, the first electrode contacting the first connection electrode and a second electrode formed under the second conductive semiconductor layer, and the second connection A second electrode in contact with the electrode and the second conductive semiconductor layer, and an anodizing film that insulates the first electrode from the second electrode, wherein the first electrode Is connected to the first lead frame, and the second electrode includes the light emitting device according to any one of claims 1 to 5 connected to the second lead frame. The method of claim 9,
And at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet disposed on a path of the light emitted from the light emitting module. Forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the growth substrate;
Forming a first connection electrode penetrating from the second conductive semiconductor layer to a predetermined portion of the first conductive semiconductor layer;
Forming a second connection electrode penetrating to a predetermined portion of the second conductive semiconductor layer;
Removing the growth substrate;
Forming an aluminum substrate under the second conductive semiconductor layer; And
Selectively anodizing the aluminum substrate, thereby separating the aluminum substrate into a first electrode and a second electrode. The method of claim 11,
And forming a phosphor layer on the first conductive semiconductor layer. The method of claim 11,
Forming the first connection electrode,
Forming a first via hole penetrating from the second conductive semiconductor layer to a portion of the first conductive semiconductor layer;
Forming a first insulating film around the first via hole from the second conductive semiconductor layer to a portion of the first conductive semiconductor layer; And
And filling the conductive metal in the first via hole to form the first connection electrode. The method of claim 11,
Forming the second connection electrode,
Forming a second via hole penetrating to a predetermined portion of the second conductive semiconductor layer; And
And forming the second connection electrode by filling a conductive metal in the second via hole. The method of claim 11,
Separating the aluminum substrate into a first electrode and a second electrode,
Forming a mask pattern for electrode separation on the aluminum substrate; And
And selectively anodizing the aluminum substrate using the electrode separation mask pattern to form an anodization film on the aluminum substrate. 16. The method of claim 15,
The electrode separation mask pattern,
The manufacturing method of the light emitting device to expose a predetermined region between the first connection electrode and the second connection electrode. The method of claim 11,
The growth substrate is a method of manufacturing a light emitting device that is removed by at least one of laser lift off, chemical etching method or physical polishing method.

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