KR20110073114A - Light emitting device and method for manufacturing thereof - Google Patents

Abstract

PURPOSE: A light emitting apparatus and a method for manufacturing the same are provided to improve the yield of the light emitting apparatus by controlling the color coordinate scattering characteristic. CONSTITUTION: A first light emitting diode chip(420a) is directly mounted on a printed circuit board. A fluorescent layer is formed on the surface of the first light emitting diode chip to emit white light in a first color coordinate region. A second light emitting diode chip(420b) is directly mounted on the printed circuit board. A fluorescent layer is formed on the surface of the second light emitting diode chip to emit white light in a second color coordinate region. A molding part(440) seals the first and the second light emitting diode chips. A wire connects the first and the second light emitting diode chips with electrode patterns on the printed circuit board.

Description

Light Emitting Device and Method for Manufacturing Thereof

The present invention relates to a light emitting device, and more particularly, to a light emitting device using a light emitting diode.

Light Emitting Diodes (LEDs) are miniaturized and have excellent luminous efficiency and are actively used as light sources for various display devices and optical communication devices.

Such a light emitting diode has a monochromatic color that emits only light of a predetermined wavelength. Accordingly, in order to implement white light using a light emitting diode, a method of generating white light by converting a part of light of a blue or ultraviolet light emitting diode using a phosphor is used.

As described above, a light emitting device implementing white light using a light emitting diode and a phosphor may be classified into a chip on board (COB) type and a package on board (POB) type according to a mounting type of the light emitting diode chip. A COB type light emitting device mounts a light emitting diode chip directly on a printed circuit board having a metal pattern. A POB (Package On Board) type light emitting device packages a light emitting diode chip using a lead frame to a printed circuit board. Mount it.

1 is a view showing a general COB type light emitting device. As shown in FIG. 1, the COB type light emitting device 100 includes a printed circuit board 110 having a metal pattern formed thereon, a light emitting diode chip 120 mounted directly on the printed circuit board 110, Wire 130 connecting the light emitting diode chip 120 to the metal patterns 112a and 112b of the printed circuit board 110, and a passivation layer 140 to protect the light emitting diode chip 120 and the wire 130. And a phosphor molding unit 150 formed of a phosphor and a transparent resin to excite the light emitted by the light emitting diode chip 110 to emit white light, the protective layer 140 and the phosphor molding unit 150 are domed. And a silk ring 114 to maintain shape.

In the case of the general COB type light emitting device as shown in FIG. 1, since the LED chip is directly mounted on the printed circuit board without a lead frame as compared to the POB type light emitting device, the heat dissipation performance is excellent and the lead frame is deleted. Due to this, there is an advantage that the material cost can be reduced. However, as shown in FIG. 2, there is a problem in that the color coordinate distribution is large and cannot be used as a light source of a liquid crystal display device requiring a small color coordinate tolerance 200.

The reason why the color coordinate dispersion is increased in the COB type light emitting device is as shown in FIG. 3, when the phosphor and the transparent resin are injected to form the phosphor molding part 150 of the COB type light emitting device 100. This is because a deviation in the amount of phosphor occurs due to a (discharge pressure) deviation or a difference in phosphor concentration occurs due to a difference in the mixing ratio of the phosphor and the transparent resin.

Therefore, there is a demand for the development of a light emitting device that can also be used as a light source of a liquid crystal display device.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and to provide a light emitting device that can be used as a light source of a liquid crystal display device by controlling color coordinate scattering characteristics.

According to an aspect of the present invention, there is provided a light emitting device including: a first light emitting diode chip mounted directly on a printed circuit board and having a phosphor layer formed on a surface thereof to emit white light in a first color coordinate region; A second light emitting diode chip mounted directly on the printed circuit board and having a phosphor layer formed on the surface thereof to emit white light in a second color coordinate region; And a molding part encapsulating the first and second LED chips together.

According to another aspect of the present invention, there is provided a light emitting device comprising: a lead frame mounted on a printed circuit board and having a reflection cup formed therein; A first light emitting diode chip mounted on a bottom surface of the reflective cup and having a phosphor layer formed on a surface thereof to emit white light in a first color coordinate region; A second light emitting diode chip mounted on a bottom surface of the reflective cup and having a phosphor layer formed on a surface thereof to emit white light in a second color coordinate region; And a molding part formed in the reflective cup to encapsulate the first and second light emitting diode chips.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device, the method including: manufacturing a plurality of light emitting diode chips having phosphor layers formed on a surface thereof to emit white light; Directly mounting the plurality of light emitting diode chips on a printed circuit board; Connecting the plurality of light emitting diode chips with an electrode pattern formed on the printed circuit board; And encapsulating the plurality of light emitting diode chips together using a transparent resin.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device, the method including: manufacturing a plurality of light emitting diode chips having phosphor layers formed on a surface thereof to emit white light; Mounting the plurality of light emitting diode chips in a lead frame; Connecting the plurality of light emitting diode chips with an electrode pattern formed in the lead frame; And encapsulating the plurality of light emitting diode chips by injecting a transparent resin into the lead frame.

According to the present invention, the color coordinate distribution of the light emitting device can be narrowed by directly forming a phosphor on the surface of the light emitting diode chip.

In addition, the present invention has an effect that the light emitting device can have a color coordinate in the target color coordinate region by mounting the light emitting diode chips having complementary colors in the light emitting device together.

In addition, the present invention has an effect of improving the yield of the light emitting device by implementing a light emitting device that can be used as a light source of the backlight unit by using a light emitting diode chip that could not be used as a light source of the backlight unit due to the scattering of the color coordinates.

In addition, the present invention can implement a light emitting device having a color coordinate included in the target color coordinate region, so that the heat dissipation performance of the backlight unit can be improved when the light source of the backlight unit is configured using the light emitting device.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First embodiment

4 is a view showing the structure of a COB type light emitting device according to a first embodiment of the present invention. As shown, the COB type light emitting device 400 according to the first embodiment of the present invention has a first light emitting device mounted directly on a printed circuit board 410 and having a phosphor layer 540 formed on the surface thereof. And a molding unit 440 encapsulating the diode chip 420a and the second light emitting diode chip 420b and the first and second light emitting diode chips 420a and 420b together.

The printed circuit board 410 may include electrode patterns 412a and 412b for allowing current to flow through the first and second LED chips 420a and 420b, and silk to allow the molding part 440 to maintain a dome shape. Ring 414 is formed.

The printed circuit board 410 may be a printed circuit board (PCB), a flexible printed circuit board (FPCB), a rigid-flexible printed circuit board, an aluminum printed circuit board (AL PCB), a ceramic substrate, a laminated CERAMIC, or the like. .

The first LED chip 420a and the second LED chip 420b have phosphor layers 540 formed on their surfaces to emit white light in the LED chip state. In this case, the first and second LED chips 420a and 420b may be blue LED chips.

That is, in the general COB type light emitting device, when blue light is emitted by the light emitting diode chip, the molding part in which the phosphor is injected excites the blue light as white light. The phosphor layer 540 is directly formed on the surfaces of the diode chips 420a and 420b to realize white light in the first and second light emitting diode chips 420a and 420b.

As described above, the configuration of the first and second LED chips 420a and 420b according to the present invention, which may implement white light in the first and second LED chips 420a and 420b, will be briefly described with reference to FIG. 5. do. Since the first and second LED chips 420a and 420b have the same structure, the first and second LED chips 420a and 420b will be described with reference to the first LED chip 420a.

5 is a view showing the configuration of a first light emitting diode chip capable of emitting white light according to an embodiment of the present invention.

As illustrated in FIG. 5, the first LED chip 420a may include a substrate 500, an N-type nitride semiconductor layer 510, an active layer 520, a P-type nitride semiconductor layer 530, and a phosphor layer 540. , A P-type electrode 550, and an N-type electrode 560.

Since the substrate 310 has the same crystal structure and crystal structure of the nitride semiconductor material grown on the substrate 310, and there is no commercial substrate forming a lattice match, the sapphire substrate is generally used in consideration of lattice matching. Used.

The N-type nitride semiconductor layer 510 is formed on the substrate 500. Representative nitride semiconductor materials constituting the N-type nitride semiconductor layer 510 include GaN, AlGaN, InGaN, AlN, AlInGaN, and the like. Impurities used for the doping of the N-type nitride semiconductor layer 510 include Si, Ge, Sn, Se, Te, and the like.

The N-type nitride semiconductor layer 510 may be formed of the above-mentioned semiconductor material by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride vapor deposition (Hydride Vapor). It is formed by growing on the substrate 500 using a deposition process such as Phase Epitaxy (HVPE).

Although the N-type nitride semiconductor layer 510 is described as being formed on the substrate 500 in the above-described embodiment, in the modified embodiment, at least one of a buffer layer (not shown) and an undoped semiconductor layer (not shown). Can be formed between the substrate 500 and the N-type nitride semiconductor layer 510.

The active layer 520 is a layer for emitting light, and is formed on the N-type nitride semiconductor layer 510 so that a portion of the N-type nitride semiconductor layer 510 is exposed. The active layer 520 is usually formed by growing an InGaN layer as a well and a (Al) GaN layer as a barrier layer to form a multi-quantum well structure (MQW). In the blue light emitting diode, a multi-quantum well structure such as InGaN / GaN is used. For the improvement of the efficiency of the active layer 520, the internal quantum efficiency of the light emitting diode is improved by controlling the wavelength of light by changing the composition ratio of In or Al, or by changing the depth of the quantum wells, the number of active layers, the thickness, and the like. I'm making it.

The active layer 520 may be formed using a deposition process such as an organometallic vapor deposition method, a molecular beam growth method, or a hydride vapor deposition method as in the N-type nitride semiconductor layer 510 described above.

The P-type nitride semiconductor layer 530 is formed on the active layer 520 so that a portion of the N-type nitride semiconductor layer 510 is exposed. Representative nitride semiconductor materials include GaN, AlGaN, InGaN, AlN, and AlInGaN. Impurities used for the doping of the P-type nitride semiconductor layer 530 include Mg, Zn, or Be.

The P-type nitride semiconductor layer 530 is formed by growing the above-described semiconductor material on the active layer 520 using a deposition process such as organometallic vapor deposition, molecular beam growth, or hydride vapor deposition.

The phosphor layer 540 is for exciting blue light with white light, and is formed on the N-type nitride semiconductor layer 510 and the P-type nitride semiconductor layer 530 that are exposed to the outside. In one embodiment, the phosphor layer 540 may be formed through a coating method. In this case, a portion of the phosphor layer 540 may be removed to form the P-type electrode 550 and the N-type electrode 560.

The P-type electrode 550 is formed on the P-type nitride semiconductor layer 530. The P-type electrode 550 may be formed by a deposition method such as a chemical vapor deposition method or an electron beam evaporation method, or a sputtering process, generally using Au or an alloy containing Au.

The N-type electrode 560 is formed on the N-type nitride semiconductor layer 510 exposed to the outside through mesa etching. The N-type electrode 560 may be formed of a single layer or a plurality of layers made of a material selected from the group consisting of Ti, Cr, Al, Cu, and Au. The N-type electrode 560 may be formed on the N-type nitride semiconductor layer 510 by a deposition method such as a chemical vapor deposition method and an electron beam evaporation method, or a process such as sputtering.

 As described above, the present invention implements white light in the first light emitting diode chip 420a by directly forming the phosphor layer 540 on the surface of the first light emitting diode chip 420a.

Meanwhile, as shown in FIG. 4, in the COB type light emitting device 400 according to the present invention, the first and second LED chips 420a and 420b are mounted together on the printed circuit board 410. In this case, the first LED chip 420a has color coordinates corresponding to the first color coordinate region, and the second LED chip 420b has color coordinates corresponding to the second color coordinate region, and the first color coordinate region and the second color coordinate region. May be in complementary color positions with respect to the target color coordinate region on the color coordinate scatter diagram.

Herein, the color coordinate region may be defined as a bin, and a bin means a unit region when the entire region of white light is divided into a predetermined number of regions in a CIE color coordinate.

The reason for mounting the first and second light emitting diode chips 420a and 420 having color coordinates corresponding to the color coordinate regions located at the complementary color positions as described above is that a light emitting diode chip having a phosphor layer formed on a surface thereof may have various color coordinates. Can emit white light (e.g., white light of yellow color, white light of blue color, white light of red color, or white light of green color, etc.), which emits white light of color coordinates located within a target color coordinate area of the LED chips. This is because only the light emitting diode chip can be used as a light source of the liquid crystal display device.

That is, in the present invention, the LED chips having color coordinates corresponding to the color coordinate regions located at complementary color positions with respect to the target color coordinate region are mounted together so that white light according to the color coordinates in the target color coordinate region 600 is finally emitted through the mixed color. It is.

For example, in FIG. 6A, it is assumed that the first LED chip 420a has a color coordinate corresponding to Bin A1, and the second LED chip 420b has a color coordinate corresponding to Bin E5. The first light emitting diode chip 420a and the second light emitting diode chip 420b cannot be used as light sources of the liquid crystal display because they are out of the region.

However, according to the present invention, the first light emitting diode chip 420a and the second light emitting diode chip 420b which are complementary to each other based on the target color coordinate region 600 are mounted together on a single printed circuit board 410. As shown in FIG. 6B, white light is finally emitted according to the color coordinates in the target color coordinate region 600 according to the principle of additive mixing, so that both the first LED chip 420a and the second LED chip 420b are emitted. Can be used as a light source of the liquid crystal display device.

As another example, assuming that the first LED chip 420a has a color coordinate corresponding to Bin C1 and the second LED chip 420b has a color coordinate corresponding to Bin C5, as shown in FIG. 6A. And the bin C5 deviates from the target color coordinate region 600, the first light emitting diode chip 420a and the second light emitting diode chip 420b cannot be used as light sources of the liquid crystal display.

However, according to the present invention, the first light emitting diode chip 420a and the second blue light emitting diode chip 420b which are complementary to each other based on the target color coordinate region 600 may be mounted together on the printed circuit board 410. Accordingly, as shown in FIG. 6B, white light is finally emitted according to the color coordinates in the target color coordinate region 600 according to the principle of additive blending, so that both the first light emitting diode 420a and the second light emitting diode chip 420b are liquid crystals. It can be used as a light source of a display device.

As such, since the light emitting diode chips, which are complementary to each other based on the target color coordinate region, of the light emitting diode chips that cannot be used as the light source of the liquid crystal display device, can be mounted in one light emitting device and used as a light source of the liquid crystal display device. The yield can be improved.

As described above, the first and second LED chips 420a and 420b are connected to the electrode patterns 412a and 412b using a wire 430 formed of silver or gold.

Next, the molding part 440 is formed using transparent silicone or transparent resin to make an optical light distribution while protecting the first and second LED chips 420a and 420b and the wire 430. In one embodiment, the molding part 440 may be formed in a dome shape, and the dome shape may be maintained by the silk ring 414 formed on the printed circuit board 410.

In the general COB type light emitting device, phosphors are injected into the molding unit 440 to excite blue light as white light. However, the COB type light emitting device 400 according to the present invention includes the first and second LED chips 420a, Since the phosphor layer 540 is directly formed on the surface of 420b, the phosphor is not injected into the molding part 440.

Therefore, in the present invention, when the phosphor is injected for forming the molding part, the variation in the amount of the phosphor due to the variation in the injection pressure and the variation in the concentration of the phosphor due to the variation in the mixing ratio of the phosphor and the transparent resin do not occur.

Hereinafter, a method of manufacturing a COB type light emitting device according to an embodiment of the present invention will be described with reference to FIG. 7.

7 is a flowchart illustrating a method of manufacturing a COB type light emitting device according to an embodiment of the present invention. As shown, first, a plurality of light emitting diode chips having a phosphor layer formed on a surface thereof are manufactured (S700). In one embodiment, the plurality of light emitting diode chips may be blue light emitting diode chips. A method of manufacturing a plurality of light emitting diode chips having a phosphor layer formed on a surface thereof will be described in more detail with reference to FIG. 8.

First, as illustrated in FIG. 8A, an N-type nitride semiconductor layer 510, an active layer 520, and a P-type nitride semiconductor layer 530 are stacked on a substrate 500. Although not shown, a buffer layer (not shown) and an undoped semiconductor layer (not shown) may be formed between the substrate 500 and the N-type nitride semiconductor layer 510.

Next, as shown in FIG. 8B, mesa etching is performed to the N-type nitride semiconductor layer 510 to form the N-type electrode 560.

Next, as shown in FIG. 8C, the phosphor layer 540 is formed on the entire surface of the substrate 500. In one embodiment, the phosphor layer 540 may be formed on the entire surface of the substrate 500 using a coating technique.

Next, as shown in FIG. 8D, a portion of the phosphor layer 540 is removed to form the P-type electrode 550 and the N-type electrode 560.

Next, as shown in FIG. 8E, the P-type electrode 550 and the N-type electrode 560 are formed on the region from which the phosphor layer 540 is removed.

Although not shown, an insulating film is formed on the entire surface of the substrate 500 using an oxide such as SiO _2, and the substrate is thinned through lapping and polishing, followed by laser or diamond. The substrate 500 is cut by using to fabricate a light emitting diode chip having a phosphor layer formed on its surface.

Referring back to FIG. 7, the plurality of light emitting diode chips manufactured in S700 are classified according to color coordinates (S710). That is, since the LED chip manufactured in S700 may emit white light of various color coordinates (for example, white light of yellow color, white light of blue color, white light of red color, or white light of green color, etc.), light emission is generated for each color coordinate. It is to classify a diode chip. In this case, each LED chip may be classified by bins corresponding to color coordinates of the LED chip.

Thereafter, among the LED chips classified by color coordinates, light emitting diode chips corresponding to bins at complementary color positions are selected based on the target color coordinate region (S720).

This is because, since only the light emitting diode chips emitting white light of the color coordinate located in the target color coordinate region among the LED chips manufactured in S700 can be used as the light source of the liquid crystal display device, the bins located at complementary colors with respect to the target color coordinate region can be used. The LED chips corresponding to the LED chips are mounted together to emit white light according to the color coordinates in the target color coordinate region.

Thereafter, the selected light emitting diode chips are mounted together on the printed circuit board to manufacture a light emitting device (S730). A method of manufacturing a light emitting device by mounting the LED chips together on a printed circuit board will be described in detail with reference to FIG. 9.

First, as shown in FIG. 9A, light emitting diode chips 420a and 420b selected in S720 are mounted on a printed circuit board 410 on which electrode patterns 412a and 412b are formed.

Next, as shown in FIG. 9B, the LED chips 420a and 420b are connected to the electrode patterns 412a and 412b of the printed circuit board 410 using the wire 430.

Next, as shown in FIG. 9C, the molding part 440 is formed using transparent silicone or transparent resin to make an optical light distribution while protecting the LED chips 420a and 420b and the wire 430. . In this case, the molding part 440 may be formed in a dome shape, and the dome shape may be maintained by the silk ring 414 formed on the printed circuit board 410.

9C, since the phosphor layer is directly formed on the surfaces of the LED chips 420a and 420b, the phosphor is not injected into the molding part 440. Therefore, when the phosphor is injected to form the molding, the variation in the amount of the phosphor due to the variation in the injection pressure and the concentration variation of the phosphor due to the variation in the mixing ratio of the phosphor and the transparent resin do not occur.

Second embodiment

10 is a view showing the structure of a POB type light emitting device according to a second embodiment of the present invention. As shown, the POB type light emitting device is a light emitting diode chip is mounted on the printed circuit board 1010 in the form of a package 1000, the package 1000 is a lead frame 1020, a reflection cup 1022, First and second light emitting diode chips 1030a and 1030b having phosphors formed on a surface thereof, and a molding part 1050.

The printed circuit board 1010 includes a lead frame 1020 in which the first and second LED chips 1030a and 1030b are packaged. The printed circuit board 1010 may be a PCB, FPCB, Rigid-FPCB, AL PCB, Ceramic Substrate, laminated CERAMIC and the like.

The lead frame 1020 is injection molded from a resin material or formed of a structure using at least one substrate. Inside the lead frame 1020, a reflective cup 1022 is formed to adjust the radiation angles of the light emitting diode chips 1030a and 1030b, and electrode patterns 1024a and 1024b are formed on the bottom surface of the reflective cup 1022. Formed.

The first and second LED chips 1030a and 1030b are mounted together on the bottom surface of the reflecting cup 1022, and a phosphor layer 540 is formed on the surface to emit white light in the LED chip state. In this case, the first and second LED chips 1030a and 1030b may be blue light emitting diodes.

In some embodiments, the first and second LED chips 1030a and 1030b mounted together in the reflective cup 1022 may have color coordinates corresponding to color coordinate regions that are complementary to each other based on a target color coordinate region. have.

That is, the first LED chip 1030a has a color coordinate corresponding to the first color coordinate region, and the second LED chip 1030b has a color coordinate corresponding to the second color coordinate region, and the first color coordinate region and the second color coordinate. The regions may be in complementary color positions with respect to the target color coordinate region on the color coordinate scatter diagram.

The reason why the first and second light emitting diode chips 1030a and 1030b having the color coordinates of the color coordinate region located at the complementary color positions are mounted together in the reflecting cup 1022 is that the light emitting diode chips having the phosphor layer formed on the surface thereof. The light emitting diode chip having color coordinates not included in the target color coordinate region is used as a light source of the liquid crystal display device.

That is, in the present invention, the LED chips having color coordinates corresponding to the color coordinate regions located at complementary color positions based on the target color coordinate region are packaged in one lead frame 1020 and finally mixed with the color coordinates in the target color coordinate region by mixing. The white light is to be emitted.

In this case, detailed configurations of the first and second LED chips 1030a and 1030b are the same as those shown in FIG. 5, and thus a detailed description thereof will be omitted.

The first and second LED chips 1030a and 1030b may be connected to the electrode patterns 1024a and 1024b using the wire 1040.

Next, the molding part 1050 is formed inside the reflection cup 1022 as to protect the first and second LED chips 1030a and 1030b and the wire 1040 while making an optical light distribution. The molding part 1050 may be formed using transparent silicone or transparent resin.

In the light emitting device package used in the general POB type, a phosphor for injecting blue light into white light is injected into the molding part 440. However, the light emitting device package 1000 according to the present invention includes the first and second LED chips 1030a. Since the phosphor layer 540 is directly formed on the surface of the 1030b, the phosphor 1040 is not injected into the molding part 1040.

Therefore, in the present invention, when the phosphor is injected for forming the molding part, the variation in the amount of the phosphor due to the variation in the injection pressure and the variation in the concentration of the phosphor due to the variation in the mixing ratio of the phosphor and the transparent resin do not occur.

The above-described POB type light emitting device may be manufactured according to the same method as shown in FIG. 7 except that the light emitting diode chip is manufactured in a package form and mounted on a printed circuit board.

That is, a plurality of light emitting diode chips having phosphor layers formed on the surfaces thereof are manufactured, and the manufactured light emitting diode chips are classified according to color coordinates. Thereafter, a plurality of light emitting diode chips corresponding to the color coordinate areas Bin at the complementary color position are selected based on the target color coordinate area, and the selected plurality of light emitting diode chips are manufactured in a package form and mounted on the printed circuit board.

Here, the method of manufacturing a plurality of light emitting diode chips having a phosphor layer formed on a surface thereof is the same as that shown in FIG. 8, and thus a detailed description thereof will be omitted. Hereinafter, a method of manufacturing a package using a plurality of light emitting diode chips having a phosphor layer formed on a surface thereof will be briefly described with reference to FIG. 11.

FIG. 11 is a view illustrating a method of manufacturing a package using a plurality of light emitting diode chips having a phosphor layer formed on a surface thereof.

First, as shown in FIG. 11A, a plurality of light emitting diode chips 1030a and 1030b having a phosphor layer formed on a surface thereof are mounted on a bottom surface of a reflecting cup 1022 formed inside a lead frame. In this case, the first and second LED chips 1030a and 1030b mounted together in the reflective cup 1022 may have color coordinates corresponding to the color coordinate regions that are complementary with respect to the target color coordinate region.

Thereafter, as shown in FIG. 11B, the plurality of light emitting diode chips 1030a and 1030b and the electrode patterns 1024a and 1024b formed on the bottom surface of the reflective cup 1022 are connected using the wire 1040. do.

Thereafter, as shown in FIG. 11C, the reflective cup 1022 is formed inside the reflective cup 1022 using transparent silicon or a transparent resin to protect the plurality of light emitting diode chips 1030a and 1030b and the wire 1040 and make an optical light distribution. The package 1000 is manufactured by forming the molding part 1050.

In the case of the present invention, as can be seen in Figure 11c, since the phosphor layer is formed directly on the surface of the plurality of light emitting diode chip (1030a, 1030b), the phosphor is not injected into the molding portion 1050. Therefore, when the phosphor is injected to form the molding, the variation in the amount of the phosphor due to the variation in the injection pressure and the concentration variation of the phosphor due to the variation in the mixing ratio of the phosphor and the transparent resin do not occur.

On the other hand, those skilled in the art will understand that the present invention described above can be implemented in other specific forms without changing the technical spirit or essential features.

For example, in the above-described embodiment, two light emitting diode chips having a complementary color relationship are described as being mounted together, but a plurality of light emitting diode chips having a complementary color relationship may be mounted together as long as they can emit white light.

For example, in the above-described embodiment, in order to form the phosphor layer on the surface of the light emitting diode chip, it is described as forming the phosphor layer on the substrate for manufacturing the light emitting diode chip when manufacturing the light emitting diode chip, but in the modified embodiment The LED chip may be mounted on the printed circuit board, or the phosphor layer may be formed on the LED chip after mounting the LED chip in the lead frame.

Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

1 is a view showing the structure of a typical COB type light emitting device.

2 is a view showing a color coordinate scatter diagram of a general COB type light emitting device.

3 is a view showing color coordinate distribution according to variation in phosphor amount and variation in phosphor concentration of a general COB type light emitting device.

4 is a two side view showing the structure of a COB type light emitting device according to a first embodiment of the present invention.

5 is a view showing the structure of a light emitting diode chip according to an embodiment of the present invention.

FIG. 6 illustrates a method of controlling color coordinate dispersion using a light emitting diode chip having color coordinates outside of a target color coordinate region. FIG.

7 is a flowchart showing a method of manufacturing a COB type light emitting device according to the present invention.

8 is a view showing a method of manufacturing a light emitting diode chip according to the present invention.

9 is a schematic view showing a method of manufacturing a light emitting device by directly mounting a plurality of light emitting diode chips on a printed circuit board according to the present invention;

10 is a view showing the structure of a POB type light emitting device according to a second embodiment of the present invention;

11 is a schematic view showing a method of manufacturing a package of a light emitting diode chip.

Claims (10)

A first light emitting diode chip mounted directly on the printed circuit board and having a phosphor layer formed on the surface thereof to emit white light in a first color coordinate region; A second light emitting diode chip mounted directly on the printed circuit board and having a phosphor layer formed on the surface thereof to emit white light in a second color coordinate region; And And a molding part encapsulating the first and second LED chips together. The method of claim 1, And a wire connecting the first and second light emitting diode chips to an electrode pattern formed on the printed circuit board. A lead frame mounted on a printed circuit board and having a reflection cup formed therein; A first light emitting diode chip mounted on a bottom surface of the reflective cup and having a phosphor layer formed on a surface thereof to emit white light in a first color coordinate region; A second light emitting diode chip mounted on a bottom surface of the reflective cup and having a phosphor layer formed on a surface thereof to emit white light in a second color coordinate region; And And a molding part formed in the reflective cup to encapsulate the first and second LED chips. The method of claim 3, wherein And a wire connecting the first and second light emitting diode chips to an electrode pattern formed on the bottom surface of the reflective cup. The method according to claim 1 or 3, Wherein the first and second light emitting diode chips are blue light emitting diode chips, and the first color coordinate region and the second color coordinate region are in complementary colors with respect to the target color coordinate region of the white light. The first and second light emitting diode chips of claim 1 or 3, wherein a phosphor layer is formed on a surface thereof. Transparent substrate; A first semiconductor layer formed on the transparent substrate; An active layer formed on the first semiconductor layer to expose a portion of the first semiconductor layer; A second semiconductor layer formed on the active layer to expose a portion of the first semiconductor layer; And And a phosphor layer formed on a portion of the first semiconductor layer and the second semiconductor layer. Forming a phosphor layer on the surface to produce a plurality of light emitting diode chips for emitting white light; Directly mounting the plurality of light emitting diode chips on a printed circuit board; Connecting the plurality of light emitting diode chips with an electrode pattern formed on the printed circuit board; And And encapsulating the plurality of light emitting diode chips together using a transparent resin. Forming a phosphor layer on the surface to produce a plurality of light emitting diode chips for emitting white light; Mounting the plurality of light emitting diode chips in a lead frame; Connecting the plurality of light emitting diode chips with an electrode pattern formed in the lead frame; And And encapsulating the plurality of light emitting diode chips by injecting transparent resin into the lead frame. The method according to claim 7 or 8, before the mounting step, The method may further include classifying the plurality of light emitting diode chips according to color coordinates. In the mounting step, the light emitting device manufacturing method characterized in that for mounting a plurality of light emitting diode chips corresponding to the color coordinate region in the complementary color position with respect to the target color coordinate region. The method of claim 7 or 8, wherein manufacturing the light emitting diode chip comprises: Forming a first semiconductor layer on the transparent substrate; Forming an active layer on the first semiconductor layer; Forming a second semiconductor layer on the active layer; Etching a portion of the active layer and the second semiconductor layer to expose a portion of the first semiconductor layer; And Forming a phosphor layer on a portion of the exposed first semiconductor layer and on the second semiconductor layer.

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