KR20110020710A - Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same - Google Patents

Abstract

PURPOSE: A thin film deposition apparatus and a method for manufacturing an organic light emitting device using the same are provided to facilitate application to a large substrate production line by enabling high-precision patterning. CONSTITUTION: A thin film deposition apparatus comprises an electrostatic chuck(600), chambers, a thin film deposition assembly, a carrier, a first power pin(604a), and a second power pin(604b). The electrostatic chuck includes a body(601) having a holding surface(605) which contacts and supports a target substrate, an electrode(602) which creates an electrostatic force on the supporting surface, and two power supply holes. The thin film deposition assembly deposits a thin film on the substrate held by the electrostatic chuck. The carrier transfers the electrostatic chuck in order to pass through chambers. The first power pin is removably installed in one of the two power source holes while the second power pin is removably installed in the other in order to provide power to the electrode.

Description

Thin film deposition apparatus and manufacturing method of organic light emitting display device using the same {Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same}

The present invention relates to a thin film deposition apparatus and a method of manufacturing an organic light emitting display device using the same. More particularly, the present invention relates to a thin film deposition apparatus and a method of manufacturing an organic light emitting display device using the same.

Among the display devices, the organic light emitting display device is attracting attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed.

The OLED display includes a light emitting layer and an intermediate layer including the light emitting layer between the first electrode and the second electrode which face each other. In this case, the electrodes and the intermediate layer may be formed by various methods, one of which is an independent deposition method. In order to fabricate an organic light emitting display device using a deposition method, a fine metal mask (FMM) having the same pattern as the pattern of the thin film to be formed is in close contact with the surface of the substrate on which the thin film or the like is to be formed. The material is deposited to form a thin film of a predetermined pattern.

However, the method of using such a fine metal mask has a limitation in that it is unsuitable for the large area using mother glass of 5G or more. That is, when the large-area mask is used, the mask warpage phenomenon occurs due to its own weight, because the distortion of the pattern may occur due to the warpage phenomenon. This is contrary to the current trend, which requires a fixed tax on the pattern.

On the other hand, in the conventional deposition method, a metal mask is placed on one side of the substrate while the edge of the substrate is fixed by a separate chuck, and a magnet is placed on the other side of the substrate so that the metal mask adheres to the surface of the substrate by the magnet. . However, since the substrate fixing method supports only the edge of the substrate, as described above, when the substrate becomes large, a problem occurs that the central portion of the substrate sags. This problem of substrate deflection becomes more serious as the substrate becomes larger.

The present invention is to overcome the limitations of the conventional deposition method using a fine metal mask as described above, more suitable for the mass production process of a large substrate, the thin film deposition apparatus capable of high-definition patterning and the manufacture of an organic light emitting display device using the same It is an object to provide a method.

In order to achieve the above object, the present invention, a body having a support surface in contact with the substrate to be deposited and supporting the substrate, an electrode embedded in the body to generate an electrostatic force on the support surface, the electrode is open An electrostatic chuck including a plurality of power holes formed at different positions of the body and provided at different positions of the body, a plurality of chambers maintained in a vacuum, disposed in at least one of the chambers, and spaced apart from the substrate by a predetermined distance, At least one thin film deposition assembly for depositing a thin film on a substrate supported by the electrostatic chuck, a carrier for moving the electrostatic chuck to pass through the chambers, and being detachable from one of the power holes to supply power to the electrode The first power supply pin located upstream of the movement path of the electrostatic chuck by the carrier, and the power supply hole. It is provided to be detachable to the other one to provide power to the electrode, and provides a thin film deposition apparatus including a second power pin located downstream of the first power pin of the movement path of the electrostatic chuck by the carrier. .

The first power pin and the second power pin may be located in different chambers.

Inverted robot for overturning the electrostatic chuck supporting the substrate is located in at least one of the chambers, the inverted robot is provided to be detachable in one of the power hole is provided with a third power pin for supplying power to the electrode Can be.

The carrier includes a support disposed to penetrate the chamber, a movable stand disposed on the support and supporting the edge of the electrostatic chuck, and a driving part interposed between the support and the movable stand and moving the movable stand along the support. It may include.

The thin film deposition assembly may include a deposition source radiating a deposition material, a deposition source nozzle part disposed on one side of the deposition source, and having a plurality of deposition source nozzles formed along a first direction, and facing the deposition source nozzle part. And a patterning slit sheet, the patterning slit sheet being formed along a second direction perpendicular to the first direction, wherein the substrate moves along the first direction with respect to the thin film deposition assembly. The deposition source, the deposition source nozzle unit, and the patterning slit sheet may be integrally formed.

The deposition source, the deposition source nozzle unit, and the patterning slit sheet may be integrally formed by being coupled by a connection member that guides a movement path of the deposition material.

The connection member may be formed to seal a space between the deposition source and the deposition source nozzle unit and the patterning slit sheet from the outside.

The plurality of deposition source nozzles may be formed to be tilted at a predetermined angle.

The plurality of deposition source nozzles may include two rows of deposition source nozzles formed along the first direction, and the two rows of deposition source nozzles may be tilted in a direction facing each other.

The plurality of deposition source nozzles may include two rows of deposition source nozzles formed along the first direction, and the deposition source nozzles disposed on the first side of the two rows of deposition source nozzles may be patterned. The deposition source nozzles disposed to face the second side end of the slit sheet and disposed on the second side of the two rows of deposition source nozzles may be arranged to face the first side end of the patterned slit sheet. .

The thin film deposition assembly may include a deposition source radiating a deposition material, a deposition source nozzle part disposed on one side of the deposition source, and having a plurality of deposition source nozzles formed along a first direction, and facing the deposition source nozzle part. A patterning slit sheet, the patterning slit sheet having a plurality of patterning slits disposed along the first direction, and disposed between the deposition source nozzle portion and the patterning slit sheet along the first direction, the deposition source nozzle portion and the patterning A blocking plate assembly having a plurality of blocking plates for partitioning a space between the slit sheets into a plurality of deposition spaces, the thin film deposition assembly being disposed to be spaced apart from the substrate, wherein the thin film deposition assembly and the substrate are mutually Can be moved relatively.

Each of the plurality of blocking plates may be formed to extend in a second direction substantially perpendicular to the first direction.

The blocking plate assembly may include a first blocking plate assembly having a plurality of first blocking plates and a second blocking plate assembly having a plurality of second blocking plates.

Each of the plurality of first blocking plates and the plurality of second blocking plates may be formed to extend in a second direction substantially perpendicular to the first direction.

Each of the plurality of first blocking plates and the plurality of second blocking plates may be disposed to correspond to each other.

The deposition source and the blocking plate assembly may be spaced apart from each other.

The blocking plate assembly and the patterning slit sheet may be spaced apart from each other.

The present invention also provides a body having a support surface in contact with the substrate to be deposited and supporting the substrate, an electrode embedded in the body and generating an electrostatic force on the support surface, so that the electrode is opened. Fixing the substrate with an electrostatic chuck formed and including a plurality of power holes provided at different positions of the body, and transferring the electrostatic chuck on which the substrate is fixed to pass through a plurality of chambers maintained in a vacuum; And providing power to the electrostatic chuck by inserting a first power pin located upstream of the moving path of the electrostatic chuck into one of the power holes, and downstream of the first power pin of the moving path of the electrostatic chuck. Inserting a located second power pin into the other of the power holes to provide power to the electrostatic chuck; Detaching from the hole, using a thin film deposition assembly disposed inside at least one of the chambers, and depositing an organic film on the substrate by relative movement of the electrostatic chuck holding the substrate and the thin film deposition assembly. A method of manufacturing an organic light emitting display device is provided.

The first power pin and the second power pin may be located in different chambers, and the insertion of the second power pin and the removal of the first power pin may be simultaneously performed.

Inverting the robot to reverse the electrostatic chuck supporting the substrate in at least one of the chambers, the step of inserting a third power pin provided in the inverted robot into one of the power hole, and the third power pin The method may further include detaching from the power hole.

The thin film deposition assembly may include a deposition source radiating a deposition material, a deposition source nozzle part disposed on one side of the deposition source, and having a plurality of deposition source nozzles formed along a first direction, and facing the deposition source nozzle part. And a patterning slit sheet, the patterning slit sheet having a plurality of patterning slits formed along a second direction perpendicular to the first direction, wherein the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally formed. The thin film deposition assembly may be disposed to be spaced apart from the substrate, so that the deposition may be performed while the substrate moves along the first direction with respect to the thin film deposition assembly.

The thin film deposition assembly may include a deposition source radiating a deposition material, a deposition source nozzle part disposed on one side of the deposition source, and having a plurality of deposition source nozzles formed along a first direction, and facing the deposition source nozzle part. A patterning slit sheet, the patterning slit sheet having a plurality of patterning slits disposed along the first direction, and disposed between the deposition source nozzle portion and the patterning slit sheet along the first direction, the deposition source nozzle portion and the A barrier plate assembly having a plurality of barrier plates for partitioning the space between the patterned slit sheets into a plurality of deposition spaces, wherein the thin film deposition assembly is arranged to be spaced apart from the substrate to deposit the thin film during deposition. The assembly and the substrate are moved relative to each other to allow deposition to the substrate.

According to the thin film deposition apparatus of the present invention and the manufacturing method of the organic light emitting display device using the same as described above, it is easy to manufacture, can be easily applied to the mass production process of a large substrate, the production yield and deposition efficiency can be improved. .

In addition, the large substrate can be stably supported by the electrostatic chuck without sagging of the substrate, and smooth movement between chambers can be achieved.

1 is a system configuration diagram schematically showing a thin film deposition apparatus according to an embodiment of the present invention,
2 is a system configuration diagram showing a modification of FIG. 1;
3 is a schematic diagram showing an example of an electrostatic chuck;
4 is a cross-sectional view showing a cross section of the first circulation unit according to an embodiment of the present invention;
5 is a cross-sectional view showing a cross section of a second circulation unit according to an embodiment of the present invention;
6 is a schematic cross-sectional view of an electrostatic chuck moving system according to an embodiment of the present invention;
7 is a schematic cross-sectional view of an electrostatic chuck movement system according to another preferred embodiment of the present invention;
8 is a perspective view showing a first embodiment of a thin film deposition assembly of the present invention;
9 is a schematic side cross-sectional view of the thin film deposition assembly of FIG. 8;
10 is a schematic cross-sectional view of the thin film deposition assembly of FIG. 8;
11 is a perspective view showing a second embodiment of the thin film deposition assembly of the present invention;
12 is a perspective view showing a third embodiment of the thin film deposition assembly of the present invention;
13 is a perspective view showing a fourth embodiment of the thin film deposition assembly of the present invention;
14 is a schematic side cross-sectional view of the thin film deposition assembly of FIG. 13;
15 is a schematic cross-sectional view of the thin film deposition assembly of FIG. 13;
16 is a cross-sectional view of an organic light emitting display device that may be manufactured by a thin film deposition assembly according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a system configuration diagram schematically showing a thin film deposition apparatus according to an embodiment of the present invention, Figure 2 shows a modification of FIG. 3 is a schematic diagram illustrating an example of an electrostatic chuck 600.

Referring to FIG. 1, a thin film deposition apparatus according to an exemplary embodiment may include a loading unit 710, a deposition unit 730, an unloading unit 720, a first circulation unit 610, and a second circulation unit ( 620).

The loading unit 710 may include a first rack 712, an introduction robot 714, an introduction chamber 716, and a first inversion chamber 718.

The first rack 712 is loaded with a large number of substrates 500 before deposition is performed, and the introduction robot 714 holds the substrate 500 from the first rack 712 from the second circulation portion 620. After placing the substrate 500 on the transferred electrostatic chuck 600, the electrostatic chuck 600 with the substrate 500 is transferred to the introduction chamber 716. Although not shown, the introduction robot 714 may be disposed in a chamber in which a predetermined degree of vacuum is maintained.

The first inversion chamber 718 is provided adjacent to the introduction chamber 716, and the first inversion robot 719 located in the first inversion chamber 718 inverts the electrostatic chuck 600 so as to invert the electrostatic chuck 600. Is mounted on the first circulation portion 610 of the deposition unit 730.

As shown in FIG. 3, the electrostatic chuck 600 includes an electrode 602 to which power is applied to the inside of the main body 601 made of ceramic, and a high voltage is applied to the electrode 602. In this way, the substrate 500 is attached to the surface of the main body 601. A more detailed description of this electrostatic chuck will be given later.

As shown in FIG. 1, the introduction robot 714 mounts the substrate 500 on an upper surface of the electrostatic chuck 600, and in this state, the electrostatic chuck 600 is transferred to the introduction chamber 716, and the first inverting robot As the 719 inverts the electrostatic chuck 600, the substrate 500 is positioned downward in the deposition unit 730. It is preferable that both the introduction chamber 716 and the first inversion chamber 718 use a chamber in which a predetermined degree of vacuum is maintained.

The configuration of the unloading unit 720 is opposite to that of the loading unit 710 described above. That is, the substrate 500 and the electrostatic chuck 600 passed through the deposition unit 730 are inverted from the second inversion chamber 728 to the second inversion robot 729 to the transport chamber 726, and the transport robot ( The 724 removes the substrate 500 and the electrostatic chuck 600 from the carrying-out chamber 726, and then separates the substrate 500 from the electrostatic chuck 600 and loads the second rack 722. The electrostatic chuck 600 separated from the substrate 500 is returned to the loading unit 710 through the second circulation unit 620. It is preferable that both the second inversion chamber 728 and the discharge chamber 726 use a chamber in which a predetermined degree of vacuum is maintained. Also, although not shown in the figure, the unloading robot 724 may be disposed in a chamber in which a predetermined degree of vacuum is maintained.

However, the present invention is not necessarily limited thereto, and since the substrate 500 is first fixed to the electrostatic chuck 600, the substrate 500 is fixed to the lower surface of the electrostatic chuck 600 to the deposition unit 730 as it is. You can also transfer. In this case, for example, the first inversion chamber 718 and the first inversion robot 719 and the second inversion chamber 728 and the second inversion robot 729 are unnecessary.

The deposition unit 730 includes at least one deposition chamber. According to an exemplary embodiment of the present invention according to FIG. 1, the deposition unit 730 includes a first chamber 731, and a plurality of thin film deposition assemblies 100 and 200 in the first chamber 731. 300 and 400 are disposed. According to a preferred embodiment of the present invention shown in Figure 1, the first thin film deposition assembly 100, the second thin film deposition assembly 200, the third thin film deposition assembly 300 and the first chamber 731 Four thin film deposition assemblies of the fourth thin film deposition assembly 400 are installed, but the number thereof may vary depending on the deposition material and the deposition conditions. The first chamber 731 is maintained in vacuum while deposition is in progress.

In addition, according to another embodiment of the present invention according to FIG. 2, the deposition unit 730 includes a first chamber 731 and a second chamber 732 connected to each other, and the first chamber 731 includes a first chamber. The first and second thin film deposition assemblies 100 and 200 may be disposed in the second chamber 732, and the third and fourth thin film deposition assemblies 300 and 400 may be disposed. At this time, of course, the number of chambers can be added.

Meanwhile, according to an exemplary embodiment of the present invention according to FIG. 1, the electrostatic chuck 600 to which the substrate 500 is fixed may be a deposition unit 730 at least by the 1-1 circulation unit 610. The electrostatic chuck 600 which is sequentially moved to the loading unit 710, the deposition unit 730, and the unloading unit 720, and separated from the substrate 500 in the unloading unit 720 may be a second circulation unit ( 620 is returned to the loading unit 710.

The first circulation part 610 is provided to pass through the first chamber 731 when passing through the deposition part 730, and the second circulation part 620 is provided to transfer the electrostatic chuck.

4 is a cross-sectional view of the first circulation portion 610 according to an embodiment of the present invention.

The first circulation part 610 includes a first carrier 611 for moving the electrostatic chuck 600 holding the substrate 500.

The first carrier 611 includes a first support 613, a second support 614, a moving base 615, and a first driving unit 616.

The first support 613 and the second support 614 are chambers of the deposition unit 730, for example, a first chamber 731 in the embodiment of FIG. 1, and a first chamber 731 in the embodiment of FIG. 2. And penetrate the second chamber 732.

The first support 613 is disposed upward in the first chamber 731, and the second support 614 is disposed below the first support 613 in the first chamber 731. According to the embodiment illustrated in FIG. 4, the first support 613 and the second support 614 are provided to be bent perpendicularly to each other, but are not necessarily limited thereto. The second support 614 may be any structure as long as it is in the lower portion.

The moving table 615 is provided to move along the first support 613, at least one end of which is supported by the first support 613, and the other end of the moving table 615 supports the edge of the electrostatic chuck 600. The electrostatic chuck 600 may be fixedly supported by the moving table 615 and moved along the first support 613 by the moving table 615. The portion supporting the electrostatic chuck 600 of the mobile unit may be bent toward the thin film deposition assembly 100 to position the substrate 500 close to the thin film deposition assembly 100.

The first driving part 616 is included between the moving table 615 and the first support 613. The first driving part 616 may include a roller 617 that can be rolled along the first support 613. The first driving unit 616 is to move the movable table 615 along the first support 613, it may be to provide a driving force in itself, the driving force from a separate drive source to the movable table 615 It may be to convey. The first driving unit 616 may be applied to any driving device as long as the moving table 615 is moved in addition to the roller 617.

5 is a cross-sectional view of the second circulation portion 620 according to an embodiment of the present invention.

The second circulation part 610 includes a second carrier 621 that moves the electrostatic chuck 600 from which the substrate 500 is separated.

The second carrier 621 also includes a third support 623, a moving table 615, and a first driving unit 616.

The third support 623 extends in the same manner as the first support 613 of the first carrier 611. The third support 623 is supported with a movable table 615 having a first driving unit 616, and the electrostatic chuck 600 separated from the substrate 500 is mounted on the movable table 615. The structure of the movable table 615 and the first driving unit 616 is as described above.

Meanwhile, when the electrostatic chuck 600 is transferred by the first carrier 611 and the second carrier 621, power must be continuously supplied to the moving electrostatic chuck 600. Referring to the structure of the system for providing power to the moving electrostatic chuck 600 in more detail as follows.

6 illustrates an example of a system for providing power to a moving electrostatic chuck 600. The electrostatic chuck 600 includes a body 601 in contact with a substrate 500 and having a support surface 605 that supports a flat wide surface of the substrate 500. The body 601 is embedded with an electrode 602 for generating an electrostatic force on the support surface 605. In addition, a plurality of power holes are formed in the body 601 so that the electrode 602 is opened. As shown in FIG. 6, the first power hole 603a and the second power hole 603b are different from each other. It is formed in. The first power supply hole 603a and the second power supply hole 603b are preferably spaced apart from each other. As shown in FIG. 6, the first power supply hole 603a is a moving direction (arrow) of the electrostatic chuck 600. The second power source hole 603b is preferably formed at the front end of the moving direction (arrow) of the electrostatic chuck 600 at the rear end of the ss.

The electrostatic chuck 600 as described above may maintain power to the electrostatic chuck 600 even when the electrostatic chuck 600 moves and passes through the chamber and the chamber.

The embodiment shown in FIG. 6 uses a first power supply pin 604a and a second power supply pin 604b respectively installed in the first chamber 731 and the second chamber 732 shown in FIG. The power is maintained when the chuck 600 is moved.

The first power pin 604a is located upstream of the movement path of the electrostatic chuck 600, and is provided in the first chamber 731 in the embodiment of FIG. 6. The first power pin 604a may be provided to be detachably attached to any one of the first power supply hole 603a and the second power supply hole 603b. According to the embodiment of FIG. The pin 604a is inserted into the first power supply hole 603a, but is not necessarily limited thereto. However, the first power pin 604a located upstream of the movement path of the electrostatic chuck 600 may be inserted into the first power hole 603a located at the rear end of the moving direction of the electrostatic chuck 600.

The second power supply pin 604b is located downstream of the movement path of the electrostatic chuck 600, and is provided in the second chamber 732 in the embodiment of FIG. 6. The second power supply pin 604b may be provided to be detachably attached to either one of the first power supply hole 603a and the second power supply hole 603b. According to the embodiment of FIG. The pin 604b is inserted into the second power supply hole 603b, but is not necessarily limited thereto. However, it is preferable that the second power supply pin 604b located downstream of the moving path of the electrostatic chuck 600 is inserted into the second power supply hole 603b located at the front end of the moving direction of the electrostatic chuck 600.

The first power pin 604a and the second power pin 604b may be installed to be moved in the first chamber 731 and the second chamber 732, respectively. Therefore, while the electrostatic chuck 600 is in the first chamber 731, the first power pin 604a is inserted into the first power supply hole 603a to apply power to the electrode 602, and the electrostatic chuck 600 ) Is in the second chamber 732, the second power supply pin 604b is inserted into the second power supply hole 603b to apply power to the electrode 602. A chamber door 733 is provided between the first chamber 731 and the second chamber 732. As the electrostatic chuck 600 passes through the chamber door 733, as shown in FIG. 6, At the same time as the second power supply pin 604b is inserted into the second power supply hole 603b, or after the second power supply pin 604b is inserted into the second power supply hole 603b, the first power supply pin 604a becomes the first power supply. The power supply can be detached from the power supply hole 603a so that the power supply to the electrode 602 is not interrupted.

In the embodiment shown in FIG. 6, the first power pin 604a and the second power pin 604b are respectively installed in the first chamber 731 and the second chamber 732, but the present invention is not limited thereto. The first power pin 604a and the second power pin 604b may be installed at different positions in the first chamber 731 of FIG. 1. In this case, of course, as the electrostatic chuck 600 moves, the second power supply pin 604b is inserted into the second power supply hole 603b, or the second power supply pin 604b is connected to the second power supply hole 603b. Of course, the first power supply pin 604a may be detached from the first power supply hole 603a after being inserted into the first power supply hole 603a so that the power supply to the electrode 602 is not interrupted.

In addition, the first power supply hole 603a and the second power supply hole 603b are not necessarily located at the rear end and the front end of the moving direction of the electrostatic chuck 600, but are provided only at positions separated from each other. Of course, in this case, as the electrostatic chuck 600 moves, the second power pin 604b is inserted into the second power hole 603b, or the second power pin 604b is connected to the second power hole 603b. Of course, the first power supply pin 604a is removed from the first power supply hole 603a after being inserted into the first power supply hole 603a so that the power supply to the electrode 602 is not interrupted.

7 illustrates another example of a system for providing power to a moving electrostatic chuck 600.

In the embodiment illustrated in FIG. 7, the electrostatic chuck 600 sequentially moves the introduction chamber 716, the first inversion chamber 718, and the first chamber 731.

In the embodiment according to FIG. 7, the third power source hole 603c, the fourth power source hole 603d, and the fifth power source hole 603e are formed at different positions in the body 601 of the electrostatic chuck 600. . In addition, a third power supply pin 604c, a fourth power supply pin 604d, and a fifth power supply pin 604e are also provided in the introduction chamber 716, the first inversion chamber 718, and the first chamber 731, respectively. have. The fourth power supply pin 604d is provided to the first inverting robot 719.

In the introduction chamber 716, the electrostatic chuck 600 moves while the third power supply pin 604c is inserted into the third power supply hole 603c. Even after the electrostatic chuck 600 is partially or fully moved from the introduction chamber 716 to the first inverting chamber 718, the third power pin 604c is inserted into the third power supply hole 603c to maintain the state of the electrostatic chuck ( Power is applied to the electrode 602 of 600. In this state, the fourth power supply pin 604d installed in the first inversion robot 719 in the first inversion chamber 718 is inserted into the fourth power supply hole 603d, and at the same time or after that, the third power supply pin 604c. ) Is detached from the third power supply hole 603c. In the first inversion chamber 718, the first inversion robot 719 inverts the electrostatic chuck 600 so that the substrate 500 faces downward, and then the electrostatic chuck 600 is introduced into the first chamber 731. The fifth power source pin 604e is inserted into the fifth power source hole 603e in the first chamber 731, and at the same time or after, the fourth power source pin 604d is detached from the fourth power source hole 603d. .

By the above method, the present invention can continuously supply power while the electrostatic chuck 600 is moved by the carrier.

Next, the thin film deposition assembly 100 disposed in the first chamber 731 will be described.

FIG. 8 is a perspective view schematically showing a first embodiment of the thin film deposition assembly of the present invention, FIG. 9 is a schematic side view of the thin film deposition assembly of FIG. 8, and FIG. 10 is a schematic plan view of the thin film deposition assembly of FIG. 8. to be.

8 to 10, the thin film deposition assembly 100 according to the first embodiment of the present invention includes a deposition source 110, a deposition source nozzle unit 120, and a patterning slit sheet 150.

In detail, in order for the deposition material 115 emitted from the deposition source 110 to pass through the deposition source nozzle unit 120 and the patterning slit sheet 150 to be deposited on the substrate 500 in a desired pattern, the first chamber is basically provided. 731 interior must maintain the same high vacuum conditions as the FMM deposition method. In addition, the temperature of the patterning slit sheet 150 should be sufficiently lower than the deposition source 110 temperature (about 100 ° or less). This is because the thermal expansion problem of the patterned slit sheet 150 due to the temperature can be minimized only when the temperature of the patterned slit sheet 150 is sufficiently low.

In the first chamber 731, a substrate 500, which is a deposition target, is disposed. The substrate 500 may be a substrate for a flat panel display. A large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

Here, in one embodiment of the present invention, the substrate 500 is characterized in that the deposition proceeds while moving relative to the thin film deposition assembly 100.

In detail, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM needs to be enlarged. As a result, there is a problem that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern.

In order to solve such a problem, the thin film deposition assembly 100 according to the embodiment of the present invention is characterized in that the deposition is performed while the thin film deposition assembly 100 and the substrate 500 move relative to each other. In other words, the substrate 500 disposed to face the thin film deposition assembly 100 moves in the Y-axis direction and continuously performs deposition. That is, deposition is performed by scanning while the substrate 500 moves in the direction of arrow A in FIG. 8.

In the thin film deposition assembly 100 of the present invention, the patterned slit sheet 150 can be made much smaller than the conventional FMM. That is, in the case of the thin film deposition assembly 100 of the present invention, since the substrate 500 moves in the Y-axis direction and performs deposition continuously, that is, by scanning, the X of the patterning slit sheet 150 The length in the axial direction and the Y-axis direction may be formed to be much smaller than the length of the substrate 500. Thus, since the patterning slit sheet 150 can be made much smaller than the conventional FMM, the patterning slit sheet 150 of the present invention is easy to manufacture. That is, in all processes, such as etching of the patterning slit sheet 150, precision tension and welding operations thereafter, movement and cleaning operations, the patterning slit sheet 150 having a small size is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

Meanwhile, the deposition source 110 in which the deposition material 115 is received and heated is disposed on the side of the chamber that faces the substrate 500. As the deposition material 115 contained in the deposition source 110 is vaporized, deposition is performed on the substrate 500.

In detail, the evaporation source 110 includes the crucible 112 filled with the evaporation material 115 therein and the evaporation material 115 filled into the crucible 112 by heating the crucible 112. One side, specifically, includes a cooling block 111 for evaporating to the deposition source nozzle unit 120 side. The cooling block 111 is to suppress the heat dissipation from the crucible 112 to the outside, that is, inside the first chamber as much as possible. The cooling block 111 is a heater (not shown) that heats the crucible 111. ) Is included.

The deposition source nozzle unit 120 is disposed on one side of the deposition source 110, in detail, the side of the deposition source 110 facing the substrate 500. A plurality of deposition source nozzles 121 are formed in the deposition source nozzle unit 120 along the Y-axis direction, that is, the scanning direction of the substrate 500. Here, the plurality of deposition source nozzles 121 may be formed at equal intervals. The evaporation material 115 vaporized in the evaporation source 110 passes through the evaporation source nozzle unit 120 such that the evaporation material 115 is directed toward the substrate 500 as the evaporation target. As described above, when the plurality of deposition source nozzles 121 are formed on the deposition source nozzle unit 120 along the Y-axis direction, that is, the scanning direction of the substrate 500, each patterning slit of the patterning slit sheet 150 ( The size of the pattern formed by the deposition material passing through the 151 is only affected by the size of one deposition source nozzle 121 (that is, there is only one deposition source nozzle 121 in the X-axis direction. Shadows will not occur. In addition, since a plurality of deposition source nozzles 121 exist in the scanning direction, even if a flux difference between individual deposition source nozzles occurs, the difference is canceled to obtain an effect of maintaining a uniform deposition uniformity.

Meanwhile, a patterning slit sheet 150 and a frame 155 are further provided between the deposition source 110 and the substrate 500. The frame 155 is formed in a shape substantially like a window frame, and the patterning slit sheet 150 is coupled to the inside thereof. The patterning slit sheet 150 is provided with a plurality of patterning slits 151 along the X-axis direction. The deposition material 115 vaporized in the deposition source 110 passes through the deposition source nozzle unit 120 and the patterning slit sheet 150 and is directed toward the substrate 500 to be deposited. In this case, the patterning slit sheet 150 may be manufactured by etching, which is the same method as a method of manufacturing a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, the total number of patterning slits 151 may be greater than the total number of deposition source nozzles 121.

Meanwhile, the above-described deposition source 110 (and the deposition source nozzle unit 120 coupled thereto) and the patterning slit sheet 150 may be formed to be spaced apart from each other to some extent, and the deposition source 110 (and coupled thereto) The deposition source nozzle unit 120 and the patterning slit sheet 150 may be connected to each other by the first connection member 135. That is, the deposition source 110, the deposition source nozzle unit 120, and the patterning slit sheet 150 may be connected by the first connection member 135 to be integrally formed with each other. Here, the first connection members 135 may guide the movement path of the deposition material so that the deposition material discharged through the deposition source nozzle 121 is not dispersed. In the drawing, the first connection member 135 is formed only in the left and right directions of the deposition source 110, the deposition source nozzle unit 120, and the patterning slit sheet 150 to guide only the X-axis direction of the deposition material. For the convenience of illustration, the spirit of the present invention is not limited thereto, and the first connection member 135 may be formed in a sealed shape in a box shape to simultaneously guide the X-axis direction and the Y-axis movement of the deposition material. have.

As described above, the thin film deposition assembly 100 according to the embodiment of the present invention performs deposition while moving relative to the substrate 500, and thus the thin film deposition assembly 100 is performed on the substrate 500. In order to move relatively, the patterned slit sheet 150 is formed to be spaced apart from the substrate 500 to some extent.

In detail, in the conventional FMM deposition method, a deposition process was performed by closely attaching a mask to a substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device becomes larger, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, the patterning slit sheet 150 is disposed to be spaced apart from the substrate 500 which is the deposition target by a predetermined distance.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

11 is a view showing a second embodiment of the thin film deposition assembly of the present invention. Referring to the drawings, the thin film deposition assembly according to the second embodiment of the present invention includes a deposition source 110, the deposition source nozzle unit 120 and the patterning slit sheet 150. Here, the deposition source 110 may be a crucible 112 filled with the deposition material 115 therein and a deposition source 115 filled with the crucible 112 by heating the crucible 112. And a cooling block 111 for evaporating to the side. Meanwhile, a deposition source nozzle unit 120 is disposed at one side of the deposition source 110, and a plurality of deposition source nozzles 121 are formed at the deposition source nozzle unit 120 along the Y-axis direction. Meanwhile, a patterning slit sheet 150 and a frame 155 are further provided between the deposition source 110 and the substrate 500, and the patterning slit sheet 150 includes a plurality of patterning slits 151 along the X-axis direction. Is formed. The deposition source 110, the deposition source nozzle unit 120, and the patterning slit sheet 150 are coupled by the second connection member 133.

In the present exemplary embodiment, the plurality of deposition source nozzles 121 formed in the deposition source nozzle unit 120 are different from the first embodiment of the above-described thin film deposition assembly in that they are disposed at a predetermined angle. In detail, the deposition source nozzle 121 may be formed of two rows of deposition source nozzles 121a and 121b, and the two rows of deposition source nozzles 121a and 121b are alternately disposed. In this case, the deposition source nozzles 121a and 121b may be tilted to be inclined at a predetermined angle on the XZ plane.

In this embodiment, the deposition source nozzles 121a and 121b are tilted at a predetermined angle to be disposed. Here, the deposition source nozzles 121a of the first row are tilted to face the deposition source nozzles 121b of the second row, and the deposition source nozzles 121b of the second row are tilted to face the deposition source nozzles 121a of the first row. Can be. In other words, the deposition source nozzles 121a disposed in the left column face the right end of the patterning slit sheet 150, and the deposition source nozzles 121b disposed in the right column move the left end of the patterning slit sheet 150. It can be arranged to look at.

By such a configuration, the difference in film thickness at the center and the end of the substrate is reduced, so that the deposition amount can be controlled so that the thickness of the entire deposition material is uniform, and further, the material utilization efficiency can be increased. .

12 is a view showing a third embodiment of the thin film deposition assembly of the present invention. Referring to the drawings, the thin film deposition apparatus according to the third embodiment of the present invention is characterized in that a plurality of thin film deposition assemblies described in FIGS. 8 to 10 are provided. In other words, the thin film deposition apparatus according to the exemplary embodiment of the present invention may include a multi-evaporation source in which the red light emitting layer (R) material, the green light emitting layer (G) material, and the blue light emitting layer (B) material are emitted at one time. It can be.

In detail, the embodiment includes a first thin film deposition assembly 100, a second thin film deposition assembly 200, and a third thin film deposition assembly 300. Since the configuration of each of the first thin film deposition assembly 100, the second thin film deposition assembly 200, and the third thin film deposition assembly 300 is the same as the thin film deposition assembly described with reference to FIGS. 8 to 10, the detailed description thereof will be given herein. Omit it.

Here, different deposition materials may be provided at deposition sources of the first thin film deposition assembly 100, the second thin film deposition assembly 200, and the third thin film deposition assembly 300. For example, the first thin film deposition assembly 100 includes a deposition material serving as a material of the red light emitting layer R, and the second thin film deposition assembly 200 includes a deposition material serving as a material of the green light emitting layer G. In addition, the third thin film deposition assembly 300 may be provided with a deposition material serving as a material of the blue light emitting layer (B).

That is, in the conventional manufacturing method of the organic light emitting display device, it was common to have a separate chamber and mask for each color, but when using the thin film deposition apparatus according to an embodiment of the present invention, the red light emitting layer as one multi-source (R), green light emitting layer (G), and blue light emitting layer (B) can be deposited at once. Therefore, the production time of the organic light emitting display device is drastically reduced, and the number of chambers to be provided is reduced, so that the equipment cost can also be significantly reduced.

In this case, although not shown in detail, the patterning slit sheets of the first thin film deposition assembly 100, the second thin film deposition assembly 200, and the third thin film deposition assembly 300 are offset to each other by a predetermined offset. As a result, the deposition regions can be prevented from overlapping. In other words, the first thin film deposition assembly 100 is responsible for the deposition of the red light emitting layer R, the second thin film deposition assembly 200 is responsible for the deposition of the green light emitting layer G, and the third thin film deposition assembly 300. ) Is responsible for the deposition of the blue light emitting layer B, the patterning slit 151 of the first thin film deposition assembly 100 and the patterning slit 251 of the second thin film deposition assembly 200 and the third thin film deposition assembly ( Since the patterning slits 351 of 300 are not disposed on the same line as each other, the red light emitting layer R, the green light emitting layer G, and the blue light emitting layer B may be formed in different regions on the substrate, respectively. .

Here, since the vapor deposition material serving as the material of the red light emitting layer R, the vapor deposition material serving as the material of the green light emitting layer G, and the vapor deposition material serving as the material of the blue light emitting layer B may have different temperatures from each other, The temperature of the deposition source 110 of the first thin film deposition assembly 100, the temperature of the deposition source of the second thin film deposition assembly 200, and the temperature of the deposition source of the third thin film deposition assembly 300 are different from each other. It may also be possible to set it up.

On the other hand, although shown in the drawing is provided with three thin film deposition assembly, the spirit of the present invention is not limited thereto. That is, the thin film deposition apparatus according to the exemplary embodiment of the present invention may include a plurality of thin film deposition assemblies, and may include different materials in each of the plurality of thin film deposition assemblies. For example, five thin film deposition assemblies may be provided, and each of the thin film deposition assemblies may include a red light emitting layer R, a green light emitting layer G, a blue light emitting layer B, and an auxiliary layer R ′ of the red light emitting layer and a green light emitting layer. Auxiliary layer (G ') may be provided.

Thus, by providing a plurality of thin film deposition assembly, it is possible to form a plurality of thin film layers at once, it is possible to obtain the effect of improving the production yield and deposition efficiency. In addition, the manufacturing process can be simplified and the manufacturing cost can be reduced.

FIG. 13 is a perspective view schematically showing a fourth embodiment of the thin film deposition assembly of the present invention, FIG. 14 is a schematic side cross-sectional view of the thin film deposition assembly of FIG. 13, and FIG. 15 is a schematic view of the thin film deposition assembly of FIG. Plane section view.

13 to 15, the thin film deposition assembly 100 according to the fourth embodiment of the present invention may include a deposition source 110, a deposition source nozzle unit 120, a blocking plate assembly 130, and a patterning slit 151. ).

Here, although the chamber is not illustrated in FIGS. 13 to 15 for convenience of description, all the components of FIGS. 13 to 15 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In this chamber, the substrate 500, which is a deposition target, is transferred by the electrostatic chuck 600. The substrate 500 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

Here, in one embodiment of the present invention, the substrate 500 is moved relative to the thin film deposition assembly 100, preferably the substrate 500 is moved in the A direction with respect to the thin film deposition assembly 100. can do.

In the thin film deposition assembly 100 of the present invention as in the first embodiment described above, the patterning slit sheet 150 can be made much smaller than the conventional FMM. That is, in the case of the thin film deposition assembly 100 of the present invention, since the substrate 500 moves in the Y-axis direction and performs deposition continuously, that is, by scanning, the X of the patterning slit sheet 150 If only the width in the axial direction and the width in the X-axis direction of the substrate 500 are substantially the same, the length in the Y-axis direction of the patterning slit sheet 150 may be formed to be much smaller than the length of the substrate 500. do. Of course, even if the width in the X-axis direction of the patterning slit sheet 150 is smaller than the width in the X-axis direction of the substrate 500, the scanning method by the relative movement of the substrate 500 and the thin film deposition assembly 100 This makes it possible to deposit the entire substrate 500 sufficiently.

Thus, since the patterning slit sheet 150 can be made much smaller than the conventional FMM, the patterning slit sheet 150 of the present invention is easy to manufacture. That is, in all processes, such as etching of the patterning slit sheet 150, precision tension and welding operations thereafter, movement and cleaning operations, the patterning slit sheet 150 having a small size is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

Meanwhile, a deposition source 110 in which the deposition material 115 is received and heated is disposed on the side of the first chamber that faces the substrate 500.

The deposition source 110 is provided with a crucible 112 filled with a deposition material 115 therein and a cooling block 111 surrounding the crucible 112. The cooling block 111 is to suppress the heat dissipation from the crucible 112 to the outside, that is, inside the first chamber as much as possible. The cooling block 111 is a heater (not shown) that heats the crucible 111. ) Is included.

The deposition source nozzle unit 120 is disposed on one side of the deposition source 110, in detail, the side of the deposition source 110 that faces the substrate 500. In the deposition source nozzle unit 120, a plurality of deposition source nozzles 121 are formed along the X-axis direction. Here, the plurality of deposition source nozzles 121 may be formed at equal intervals. The evaporation material 115 vaporized in the evaporation source 110 passes through the evaporation source nozzles 121 of the evaporation source nozzle unit 120 and is directed toward the substrate 500 which is the evaporation target.

A blocking plate assembly 130 is provided at one side of the deposition source nozzle unit 120. The blocking plate assembly 130 includes a plurality of blocking plates 131 and a blocking plate frame 132 provided outside the blocking plates 131. The plurality of blocking plates 131 may be arranged parallel to each other along the X-axis direction. Here, the plurality of blocking plates 131 may be formed at equal intervals. In addition, each of the blocking plates 131 extends along the YZ plane when viewed in the drawing, and may be preferably provided in a rectangular shape. The plurality of blocking plates 131 arranged as described above divides the space between the deposition source nozzle unit 120 and the patterning slit 150 into a plurality of deposition spaces S. That is, in the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, as shown in FIG. 15, the thin film deposition assembly 100 is deposited space by each deposition source nozzle 121 to which a deposition material is injected. (S) is separated.

Here, each of the blocking plates 131 may be disposed between the deposition source nozzles 121 adjacent to each other. In other words, one deposition source nozzle 121 is disposed between neighboring blocking plates 131. Preferably, the deposition source nozzle 121 may be located at the center of the barrier plate 131 adjacent to each other. However, the present invention is not limited thereto, and the plurality of deposition source nozzles 121 may be disposed between the blocking plates 131 adjacent to each other. However, even in this case, it is preferable that the plurality of deposition source nozzles 121 are positioned at the centers between the blocking plates 131 adjacent to each other.

As described above, the blocking plate 131 divides the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 into a plurality of deposition spaces S, thereby depositing from one deposition source nozzle 121. The material is not mixed with deposition materials discharged from other deposition source nozzles 121, but is deposited on the substrate 500 through the patterning slit 151. That is, the blocking plates 131 guide the movement path in the Z-axis direction of the deposition material so that the deposition material discharged through the deposition source nozzles 121 is not dispersed and maintains straightness.

As such, by providing the blocking plates 131 to secure the straightness of the deposition material, the size of the shadow formed on the substrate can be greatly reduced, and thus, the thin film deposition assembly 100 and the substrate 500 may be fixed. It becomes possible to space apart. This will be described later in detail.

Meanwhile, a blocking plate frame 132 may be further provided outside the plurality of blocking plates 131. The blocking plate frame 132 is provided on each side of the plurality of blocking plates 131 to fix the positions of the plurality of blocking plates 131, and the deposition material discharged through the deposition source nozzle 121 is Y. It serves to guide the movement path in the Y-axis direction of the deposition material so as not to be dispersed in the axial direction.

The deposition source nozzle unit 120 and the blocking plate assembly 130 are preferably spaced apart to some extent. Accordingly, heat emitted from the deposition source 110 may be prevented from being conducted to the blocking plate assembly 130. However, the spirit of the present invention is not limited thereto. That is, when an appropriate heat insulating means is provided between the deposition source nozzle unit 120 and the blocking plate assembly 130, the deposition source nozzle unit 120 and the blocking plate assembly 130 may be in contact with each other.

Meanwhile, the blocking plate assembly 130 may be formed to be detachable from the thin film deposition assembly 100. In the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, since the deposition space is separated from the external space by using the barrier plate assembly 130, the deposition material that is not deposited on the substrate 500 is mostly blocked. 130). Therefore, when the blocking plate assembly 130 is formed to be detachable from the thin film deposition assembly 100, and a large amount of deposition material is accumulated in the blocking plate assembly 130 after a long time of deposition, the blocking plate assembly 130 may be replaced with the thin film deposition assembly ( Deposition from 100) may be put into a separate deposition material recycling apparatus to recover the deposition material. Through such a configuration, it is possible to obtain an effect of improving deposition efficiency and reducing manufacturing cost by increasing deposition material recycling rate.

Meanwhile, a patterning slit sheet 150 and a frame 155 are further provided between the deposition source 110 and the substrate 500. The frame 155 is formed in the shape of a window frame, and the patterning slit sheet 150 is coupled to the inside thereof. The patterning slit sheet 150 is provided with a plurality of patterning slits 151 along the X-axis direction. Each patterning slit 151 extends along the Y-axis direction. The deposition material 115 vaporized in the deposition source 110 and passing through the deposition source nozzle 121 passes through the patterning slits 151 to be directed toward the substrate 500, which is the deposition target.

The patterning slit sheet 150 is formed of a thin metal plate and is fixed to the frame 155 in a tensioned state. The patterning slit 151 is formed by etching the patterning slit sheet 150 in a stripe type.

Here, the thin film deposition assembly 100 according to the exemplary embodiment of the present invention is formed such that the total number of patterning slits 151 is greater than the total number of deposition source nozzles 121. In addition, the number of patterning slits 151 is greater than the number of deposition source nozzles 121 disposed between two blocking plates 131 adjacent to each other. The number of the patterning slits 151 may correspond to the number of deposition patterns to be formed on the substrate 500.

Meanwhile, the above-described blocking plate assembly 130 and the patterning slit sheet 150 may be formed to be spaced apart from each other to some extent, and the blocking plate assembly 130 and the patterning slit sheet 150 may be separate second connection members 133. ) Can be connected to each other. In detail, since the temperature of the blocking plate assembly 130 is increased by at least 100 ° C. by the deposition source 110 in a high temperature state, the temperature of the raised blocking plate assembly 130 is not conducted to the patterning slit sheet 150. The blocking plate assembly 130 and the patterning slit sheet 150 are spaced apart to some extent.

As described above, the thin film deposition assembly 100 according to the embodiment of the present invention performs deposition while moving relative to the substrate 500, and thus the thin film deposition assembly 100 is performed on the substrate 500. In order to move relatively, the patterned slit sheet 150 is formed to be spaced apart from the substrate 500 to some extent. In addition, in order to solve a shadow problem that occurs when the patterning slit sheet 150 and the substrate 500 are spaced apart, the blocking plate 131 between the deposition source nozzle unit 120 and the patterning slit sheet 150. By providing the straightness of the deposition material to provide a significant reduction in the size of the shadow (shadow) formed on the substrate.

In the conventional FMM deposition method, the deposition process was performed by bringing a mask into close contact with the substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate in this manner, there is a problem that a defect problem occurs such that the patterns already formed on the substrate are scratched by the contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device becomes larger, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, the patterning slit sheet 150 is disposed to be spaced apart from the substrate 500 which is the deposition target by a predetermined distance. This can be realized by providing the blocking plate 131 so that the shadow generated on the substrate 500 is reduced.

By forming the patterned slit sheet smaller than the substrate according to the present invention as described above, the patterned slit sheet is moved relative to the substrate, thereby eliminating the need to produce a large mask as in the conventional FMM method. In addition, since the space between the substrate and the patterned slit sheet is spaced apart, the effect of preventing defects due to mutual contact can be obtained. Moreover, since the time which adhere | attaches a board | substrate and a patterning slit sheet | seat at the process becomes unnecessary, the effect which manufacture speed improves can be acquired.

As described above, the thin film deposition assembly 100 may be disposed in plurality in the first chamber 731 as shown in FIG. 1. In this case, each of the thin film deposition assemblies 100, 200, 300, 400 may deposit different deposition materials. In this case, each thin film deposition assembly 100, 200, 300, 400 may be deposited. By forming the patterning slits in different patterns, for example, a film forming process such as collectively depositing red, green, and blue pixels can be performed.

16 is a cross-sectional view of an active matrix organic light emitting display device manufactured using the deposition apparatus of the present invention.

Referring to FIG. 16, the active mattress organic light emitting display device is formed on a substrate 30. The substrate 30 may be formed of a transparent material, for example, a glass material, a plastic material, or a metal material. An insulating film 31, such as a buffer layer, is formed on the substrate 30 as a whole.

On the insulating film 31, a TFT 40, a capacitor 50, and an organic light emitting element 60 as shown in FIG. 16 are formed.

The semiconductor active layer 41 arranged in a predetermined pattern is formed on the upper surface of the insulating film 31. The semiconductor active layer 41 is buried by the gate insulating film 32. The active layer 41 may be formed of a p-type or n-type semiconductor.

The gate electrode 42 of the TFT 40 is formed on the top surface of the gate insulating layer 32 to correspond to the active layer 41. An interlayer insulating layer 33 is formed to cover the gate electrode 42. After the interlayer insulating layer 33 is formed, a portion of the active layer 41 is exposed by etching the gate insulating layer 32 and the interlayer insulating layer 33 by an etching process such as dry etching to form a contact hole.

Next, a source / drain electrode 43 is formed on the interlayer insulating layer 33 so as to contact the active layer 41 exposed through the contact hole. A passivation layer 34 is formed to cover the source / drain electrode 43, and a portion of the drain electrode 43 is exposed through an etching process. An additional insulating layer may be further formed on the passivation layer 34 to planarize the passivation layer 34.

On the other hand, the organic light emitting device 60 is to display predetermined image information by emitting red, green, and blue light according to the flow of current, and the first electrode 61 is formed on the passivation layer 34. do. The first electrode 61 is electrically connected to the drain electrode 43 of the TFT 40.

The pixel defining layer 35 is formed to cover the first electrode 61. After the predetermined opening 64 is formed in the pixel definition film 35, the organic light emitting film 63 is formed in the region defined by the opening 64. The second electrode 62 is formed on the organic emission layer 63.

The pixel definition layer 35 partitions each pixel and is formed of an organic material to planarize the surface of the substrate on which the first electrode 61 is formed, particularly the surface of the protective layer 34.

The first electrode 61 and the second electrode 62 are insulated from each other, and light is emitted by applying voltages of different polarities to the organic light emitting layer 63.

The organic light emitting layer 63 may be a low molecular weight or high molecular organic material. When the low molecular weight organic material is used, a hole injection layer (HIL), a hole transport layer (HTL), and an emission layer (EML) are emitted. ), An electron transport layer (ETL), an electron injection layer (EIL), and the like may be formed by stacking a single or a complex structure, and the usable organic material may be copper phthalocyanine (CuPc). , N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Various applications are possible, including tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic materials can be formed by the vacuum deposition method using the vapor deposition apparatus shown in FIGS. 1 to 15.

First, after the opening 64 is formed in the pixel definition layer 35, the substrate 30 is transferred into the chamber 20 as shown in FIG. 1. The target organic material is stored in the first deposition source 11 and the second deposition source 12, and then vapor deposited. In this case, when the host and the dopant are deposited at the same time, the host material and the dopant material are stored in the first deposition source 11 and the second deposition source 12 to be deposited.

After the organic light emitting film is formed, the second electrode 62 may also be formed by the same deposition process.

Meanwhile, the first electrode 61 may function as an anode electrode, and the second electrode 62 may function as a cathode electrode. Of course, these first electrodes 61 and the second electrode may be used. The polarity of 62 may be reversed. The first electrode 61 may be patterned to correspond to the area of each pixel, and the second electrode 62 may be formed to cover all the pixels.

The first electrode 61 may be provided as a transparent electrode or a reflective electrode, and when used as a transparent electrode, may be formed of ITO, IZO, ZnO, or In 2 O 3, and when used as a reflective electrode, Ag, Mg, After the reflective layer is formed of Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like, a transparent electrode layer may be formed thereon with ITO, IZO, ZnO, or In 2 O 3. The first electrode 61 is formed by a sputtering method or the like and then patterned by a photolithography method or the like.

Meanwhile, the second electrode 62 may also be provided as a transparent electrode or a reflective electrode. When the second electrode 62 is used as a transparent electrode, since the second electrode 62 is used as a cathode, a metal having a small work function, namely, Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and compounds thereof are deposited to face the organic light emitting film 63, and thereafter, ITO, IZO, ZnO, In2O3, and the like are deposited thereon. An auxiliary electrode layer or a bus electrode line can be formed. When used as a reflective electrode, Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and compounds thereof are formed by depositing the entire surface. At this time, vapor deposition can be performed in the same manner as in the case of the organic light emitting film 63 described above.

In addition to the above, the present invention can also be used for vapor deposition of an organic film or an inorganic film of an organic TFT, and can be applied to a film forming process of various other materials.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Claims (22)

A body having a support surface in contact with the substrate to be deposited and supporting the substrate, an electrode embedded in the body and generating an electrostatic force on the support surface, and a plurality of electrodes formed to be opened and provided at different positions of the body An electrostatic chuck comprising a power hole;
A plurality of chambers maintained in vacuum;
At least one thin film deposition assembly disposed in at least one of the chambers, spaced apart from the substrate, and deposited on a substrate supported by the electrostatic chuck;
A carrier for moving the electrostatic chuck through the chambers;
A first power pin provided detachably in one of the power holes to provide power to the electrode and positioned upstream of a movement path of the electrostatic chuck by the carrier; And
A second power supply pin provided to be detachable from the other one of the power supply holes to provide power to the electrode, the second power supply pin being downstream from the first power supply pin in the movement path of the electrostatic chuck by the carrier; Deposition apparatus. The method of claim 1,
The thin film deposition apparatus of claim 1, wherein the first power pin and the second power pin are located in different chambers. The method of claim 1,
Inverted robot is located in at least one of the chambers to reverse the electrostatic chuck supporting the substrate,
The inverting robot is thin film deposition apparatus is provided with a third power pin is provided to be detachable in one of the power holes to provide power to the electrode. The method of claim 1,
The carrier,
A support disposed to penetrate the chamber;
A mover disposed on the support and supporting an edge of the electrostatic chuck; And
And a driving part interposed between the support and the moving table and moving the moving table along the support. The method according to any one of claims 1 to 4,
The thin film deposition assembly,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction; And
A patterning slit sheet disposed to face the deposition source nozzle unit and having a plurality of patterning slits formed along a second direction perpendicular to the first direction,
Deposition is performed while the substrate is moved along the first direction with respect to the thin film deposition assembly,
And the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally formed. The method of claim 5, wherein
And the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally formed by a coupling member that guides the movement path of the deposition material. The method according to claim 6,
And the connection member is formed to seal a space between the deposition source and the deposition source nozzle unit and the patterning slit sheet from the outside. The method of claim 5, wherein
And the plurality of deposition source nozzles are formed to be tilted at a predetermined angle. The method of claim 8,
The plurality of deposition source nozzles may include two rows of deposition source nozzles formed along the first direction, and the two rows of deposition source nozzles may be tilted in a direction facing each other. Thin film deposition apparatus. The method of claim 8,
The plurality of deposition source nozzles include two rows of deposition source nozzles formed along the first direction,
Deposition source nozzles disposed on the first side of the two rows of deposition source nozzles are disposed to face the second side end of the patterned slit sheet,
And deposition source nozzles disposed on a second side of the two rows of deposition source nozzles to face an end of the first side of the patterned slit sheet. The method according to any one of claims 1 to 4,
The thin film deposition assembly,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction;
A patterning slit sheet disposed to face the deposition source nozzle unit and having a plurality of patterning slits disposed along the first direction; And
A plurality of blocking plates disposed in the first direction between the deposition source nozzle part and the patterning slit sheet and partitioning a space between the deposition source nozzle part and the patterning slit sheet into a plurality of deposition spaces; A blocking plate assembly;
The thin film deposition assembly is disposed to be spaced apart from the substrate,
And the thin film deposition assembly and the substrate are moved relative to each other. The method of claim 11,
Each of the plurality of blocking plates is formed to extend in a second direction substantially perpendicular to the first direction. The method of claim 11,
The blocking plate assembly may include a first blocking plate assembly having a plurality of first blocking plates and a second blocking plate assembly having a plurality of second blocking plates. The method of claim 13,
The thin film deposition apparatus of claim 1, wherein each of the plurality of first blocking plates and the plurality of second blocking plates is formed to extend in a second direction substantially perpendicular to the first direction. The method of claim 14,
The thin film deposition apparatus of claim 1, wherein each of the plurality of first blocking plates and the plurality of second blocking plates is disposed to correspond to each other. The method of claim 11,
The deposition source and the blocking plate assembly is thin film deposition apparatus, characterized in that spaced apart from each other. The method of claim 11,
And the blocking plate assembly and the patterning slit sheet are spaced apart from each other. A body having a support surface in contact with the substrate to be deposited and supporting the substrate, an electrode embedded in the body and generating an electrostatic force on the support surface, and a plurality of electrodes formed to be opened and provided at different positions of the body Fixing the substrate with an electrostatic chuck including a power hole of the substrate;
Transferring the electrostatic chuck to which the substrate is fixed to pass through a plurality of chambers maintained in vacuum;
Inserting a first power pin located upstream of a movement path of the electrostatic chuck into one of the power holes to provide power to the electrostatic chuck;
Inserting a second power pin downstream of the first power pin of the moving path of the electrostatic chuck into another one of the power holes to provide power to the electrostatic chuck;
Detaching the first power pin from the power hole;
Depositing an organic layer on the substrate by using a thin film deposition assembly disposed in at least one of the chambers and relative movement of the electrostatic chuck fixing the substrate and the thin film deposition assembly. Manufacturing method. The method of claim 18,
The first power pin and the second power pin is located in a different chamber,
And inserting the second power pin and detaching the first power pin at the same time. The method of claim 18,
Inverted robot is located in at least one of the chambers to reverse the electrostatic chuck supporting the substrate,
Inserting a third power pin provided in the inversion robot into one of the power holes; And
And removing the third power pin from the power hole. The method according to any one of claims 18 to 20,
The thin film deposition assembly,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction; And
A patterning slit sheet disposed to face the deposition source nozzle unit and having a plurality of patterning slits formed along a second direction perpendicular to the first direction,
The deposition source, the deposition source nozzle unit and the patterning slit sheet are integrally formed,
The thin film deposition assembly is disposed to be spaced apart from the substrate, and the deposition is performed while the substrate is moved along the first direction with respect to the thin film deposition assembly during the deposition is in progress. The method according to any one of claims 18 to 20,
The thin film deposition assembly,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction;
A patterning slit sheet disposed to face the deposition source nozzle unit and having a plurality of patterning slits disposed along the first direction; And
A plurality of blocking plates disposed in the first direction between the deposition source nozzle part and the patterning slit sheet and partitioning a space between the deposition source nozzle part and the patterning slit sheet into a plurality of deposition spaces; A blocking plate assembly;
The thin film deposition assembly may be disposed to be spaced apart from the substrate, so that the deposition is performed on the substrate by moving the thin film deposition assembly and the substrate relative to each other during deposition.

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