KR20080052686A - Photosensitive resin composition, photosensitive element, and method for manufacturing printed wiring board - Google Patents
Photosensitive resin composition, photosensitive element, and method for manufacturing printed wiring board Download PDFInfo
- Publication number
- KR20080052686A KR20080052686A KR1020087010262A KR20087010262A KR20080052686A KR 20080052686 A KR20080052686 A KR 20080052686A KR 1020087010262 A KR1020087010262 A KR 1020087010262A KR 20087010262 A KR20087010262 A KR 20087010262A KR 20080052686 A KR20080052686 A KR 20080052686A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- photosensitive
- resin composition
- meth
- plating
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000011342 resin composition Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- -1 acrylate compound Chemical class 0.000 claims abstract description 46
- 150000001875 compounds Chemical class 0.000 claims abstract description 27
- 229920000642 polymer Polymers 0.000 claims abstract description 27
- 239000011230 binding agent Substances 0.000 claims abstract description 25
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229920001515 polyalkylene glycol Polymers 0.000 claims abstract description 5
- 239000003999 initiator Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 62
- 238000007747 plating Methods 0.000 claims description 60
- 229920005989 resin Polymers 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 23
- 238000007772 electroless plating Methods 0.000 claims description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 13
- 125000002947 alkylene group Chemical group 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 6
- 239000000539 dimer Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 141
- 239000000047 product Substances 0.000 description 37
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 36
- 239000000243 solution Substances 0.000 description 29
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 22
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 19
- 239000001294 propane Substances 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 17
- 239000007864 aqueous solution Substances 0.000 description 15
- 238000011156 evaluation Methods 0.000 description 15
- 229940048053 acrylate Drugs 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000011161 development Methods 0.000 description 9
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 229940106691 bisphenol a Drugs 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910018104 Ni-P Inorganic materials 0.000 description 4
- 229910018536 Ni—P Inorganic materials 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 150000003440 styrenes Chemical group 0.000 description 3
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- MJVAVZPDRWSRRC-UHFFFAOYSA-N Menadione Chemical compound C1=CC=C2C(=O)C(C)=CC(=O)C2=C1 MJVAVZPDRWSRRC-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- 229910021538 borax Inorganic materials 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
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- 150000002148 esters Chemical class 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
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- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000001488 sodium phosphate Substances 0.000 description 2
- 229910000162 sodium phosphate Inorganic materials 0.000 description 2
- 239000004328 sodium tetraborate Substances 0.000 description 2
- 235000010339 sodium tetraborate Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 2
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 description 1
- CDUQMGQIHYISOP-RMKNXTFCSA-N (e)-2-cyano-3-phenylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C\C1=CC=CC=C1 CDUQMGQIHYISOP-RMKNXTFCSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- NNNLYDWXTKOQQX-UHFFFAOYSA-N 1,1-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical compound C=CC(=O)OC(CC)(OC(=O)C=C)OC(=O)C=C NNNLYDWXTKOQQX-UHFFFAOYSA-N 0.000 description 1
- XHXSXTIIDBZEKB-UHFFFAOYSA-N 1,2,3,4,5,6,7,8-octamethylanthracene-9,10-dione Chemical compound CC1=C(C)C(C)=C2C(=O)C3=C(C)C(C)=C(C)C(C)=C3C(=O)C2=C1C XHXSXTIIDBZEKB-UHFFFAOYSA-N 0.000 description 1
- SCEFCWXRXJZWHE-UHFFFAOYSA-N 1,2,3-tribromo-4-(2,3,4-tribromophenyl)sulfonylbenzene Chemical compound BrC1=C(Br)C(Br)=CC=C1S(=O)(=O)C1=CC=C(Br)C(Br)=C1Br SCEFCWXRXJZWHE-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- LMGYOBQJBQAZKC-UHFFFAOYSA-N 1-(2-ethylphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 LMGYOBQJBQAZKC-UHFFFAOYSA-N 0.000 description 1
- BOCJQSFSGAZAPQ-UHFFFAOYSA-N 1-chloroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl BOCJQSFSGAZAPQ-UHFFFAOYSA-N 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- KIJPZYXCIHZVGP-UHFFFAOYSA-N 2,3-dimethylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=C(C)C(C)=C2 KIJPZYXCIHZVGP-UHFFFAOYSA-N 0.000 description 1
- LZWVPGJPVCYAOC-UHFFFAOYSA-N 2,3-diphenylanthracene-9,10-dione Chemical compound C=1C=CC=CC=1C=1C=C2C(=O)C3=CC=CC=C3C(=O)C2=CC=1C1=CC=CC=C1 LZWVPGJPVCYAOC-UHFFFAOYSA-N 0.000 description 1
- UCSGWEMRGIONEW-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-bis(2-methoxyphenyl)-1h-imidazole Chemical class COC1=CC=CC=C1C1=C(C=2C(=CC=CC=2)OC)NC(C=2C(=CC=CC=2)Cl)=N1 UCSGWEMRGIONEW-UHFFFAOYSA-N 0.000 description 1
- NSWNXQGJAPQOID-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-diphenyl-1h-imidazole Chemical class ClC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 NSWNXQGJAPQOID-UHFFFAOYSA-N 0.000 description 1
- UIHRWPYOTGCOJP-UHFFFAOYSA-N 2-(2-fluorophenyl)-4,5-diphenyl-1h-imidazole Chemical class FC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 UIHRWPYOTGCOJP-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XIOGJAPOAUEYJO-UHFFFAOYSA-N 2-(2-methoxyphenyl)-4,5-diphenyl-1h-imidazole Chemical class COC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 XIOGJAPOAUEYJO-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- DVVXXHVHGGWWPE-UHFFFAOYSA-N 2-(dimethylamino)benzoic acid Chemical compound CN(C)C1=CC=CC=C1C(O)=O DVVXXHVHGGWWPE-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
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- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/243—Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads
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Abstract
Description
본 발명은, 감광성 수지조성물, 감광성 엘리먼트, 및 프린트 배선판의 제조 방법에 관한 것이다.This invention relates to the photosensitive resin composition, the photosensitive element, and the manufacturing method of a printed wiring board.
종래에, 프린트 배선판의 제조 분야에서는, 회로의 보호 및 접촉저항의 저감 등을 목적으로 하여, 회로상에 금속 도금 가공을 행하고 있다. 또한, 휴대 전자 기기의 보급에 수반하여, 사용되는 실장부품의 형태는 소형화에 유리한 Chip Scale Package(CSP)나 Ball Grid Array(BGA)가 급속히 증가하고 있다. 이러한 실장부품은, 실장 패드(땜납 패드) 등을 제외한 프린트 배선판의 회로 도체의 전면에 표면 수지층(솔더 레지스트)을 형성하고, 패드의 부분 등에 금속 도금 가공을 실시하며, 도금 가공된 패드와 땜납볼에 의해서, 배선판과 접속된다. 금속 도금 가공에는, 양호한 금속 결합을 확보하기 위해서, 많은 경우에, 금도금이 이용되고 있다.Background Art Conventionally, in the field of manufacturing printed wiring boards, metal plating is performed on circuits for the purpose of protecting circuits, reducing contact resistance, and the like. In addition, with the spread of portable electronic devices, the form of mounting components used is rapidly increasing in chip scale packages (CSPs) and ball grid arrays (BGAs), which are advantageous for miniaturization. Such a mounting component forms a surface resin layer (solder resist) on the entire surface of a circuit conductor of a printed wiring board except for mounting pads (solder pads) and the like, performs metal plating on parts of the pads, and is plated pads and solder. It is connected with a wiring board by a ball. In many cases, gold plating is used for metal plating in order to ensure a good metal bond.
그리고, 상기 분야에 있어서의 금도금의 방법은, 전해 도금법에서 무전해 도금법으로 급속히 이행하고 있다. 이것은, 프린트 배선판의 소형화·고밀도화가 진척한 것, 전극용 리드선이 불필요하여 균일한 도금막 두께 및 평활한 표면이 얻어 지는 것 등에 근거한 것이며, 무전해 도금으로의 이행은 휴대 전자 기기용 기판에 있어서 특히 현저하다.And the gold plating method in the said field is rapidly moving from the electrolytic plating method to the electroless plating method. This is based on the progress of miniaturization and high density of printed wiring boards, the need for electrode plated wires to be necessary, and the uniform plating film thickness and smooth surface to be obtained. The transition to electroless plating is based on substrates for portable electronic devices. Especially notable.
그런데, 최근 급속히 시장이 확대하고 있는 휴대전화기 등의 휴대 전자 기기에 이용되는 기판에서는, 낙하 충격이나 입력키를 누르는 힘에 의한 굴곡에 의해, CSP나 BGA 등의 실장부품이 기판 표면으로부터 탈락하기 쉬운 등의 문제가 발생하지만, 그 한 요인은, 무전해 도금법에 의한 프린트 배선판이 전해 도금법에 의한 것보다도 땜납볼 접속 신뢰성이 낮기 때문이라고 생각되고 있다. 이 문제를 해결하기 위해서, 실장부품을 탑재하는 부분(구리 회로)에는 무전해 도금을 하지 않고, 그 이외의 부분에 무전해 도금을 하는 방법이 제안되고 있다(특허 문헌 1).By the way, in the board | substrate used for portable electronic devices, such as a mobile telephone which the market is rapidly expanding in recent years, mounting components, such as CSP and BGA, are easy to fall out from the board surface by drop impact and the bending by the force which presses an input key. Although such a problem occurs, one of the factors is considered to be that the printed wiring board by the electroless plating method has a lower solder ball connection reliability than the electroplating method. In order to solve this problem, a method of electroless plating to other portions without copper plating on a portion (copper circuit) on which the mounting components are mounted has been proposed (Patent Document 1).
또한, 뛰어난 해상도, 밀착성, 광감도 및 도금 내성을 가질 뿐만 아니라, 도금욕의 오염을 충분히 저감할 수 있는 감광성 수지조성물을 제공하기 위해, 바인더 폴리머와, 분자내에 적어도 1개의 중합 가능한 에틸렌성 불포화 결합을 가지는 광중합성 화합물과, 광중합 개시제와, 착색제를 함유하고 있으며, 또한 미경화 상태에서의 전체 광선 투과율이 60% 이상인 감광성 수지조성물이 개시되어 있다(예를 들면, 특허문헌 2참조).In addition, in order to provide a photosensitive resin composition which not only has excellent resolution, adhesion, photosensitivity and plating resistance, but also can sufficiently reduce the contamination of the plating bath, a binder polymer and at least one polymerizable ethylenically unsaturated bond in the molecule are used. The photosensitive resin composition which contains the photopolymerizable compound, a photoinitiator, and a coloring agent, and whose total light transmittance in an uncured state is 60% or more is disclosed (for example, refer patent document 2).
특허 문헌 1: 국제공개 제98/04407호 팜플렛Patent Document 1: International Publication No. 98/04407 Pamphlet
특허 문헌 2: 일본 특허공개공보 제2004-12812호Patent Document 2: Japanese Patent Laid-Open No. 2004-12812
발명의 개시Disclosure of the Invention
발명이 해결하고자 하는 과제Problems to be Solved by the Invention
CSP나 BGA 등의 전자부품의 표면 실장을 보다 높은 신뢰성으로 실시할 수 있는 프린트 배선판은, 회로형성 기판(회로 패턴이 형성된 기판)상에 소정의 패턴으로 표면 수지층(솔더 레지스트)이 형성된 적층 기판상에, 감광성 수지조성물의 경화물층(레지스트 패턴)을 회로 패턴이 노출하도록 형성시키고, 회로 패턴상에 무전해 도금을 실시한 후에, 그 경화물층(레지스트 패턴)을 제거하는 방법에 의해, 제조할 수 있는 것으로 생각된다. The printed wiring board which can perform surface mounting of electronic components, such as CSP and BGA with high reliability, is a laminated board in which the surface resin layer (solder resist) was formed in the predetermined pattern on the circuit formation board (substrate with a circuit pattern formed). The cured product layer (resist pattern) of the photosensitive resin composition is formed on the circuit pattern so that the circuit pattern is exposed, and after electroless plating is performed on the circuit pattern, it is manufactured by the method of removing the cured product layer (resist pattern). I think I can.
그러나, 종래, 무전해 도금 후의 경화물층(레지스트 패턴)의 표면 수지층으로부터의 박리성이 충분하지 않아, 경화물층의 일부가 제거되지 않고 표면 수지층상에 남아 버리는 레지스트 잔재가 발생하여 버리는 문제가 있었다.However, conventionally, the peelability from the surface resin layer of the cured product layer (resist pattern) after electroless plating is not sufficient, and a part of the cured product layer is not removed but a resist residue that remains on the surface resin layer occurs. There was.
따라서, 본 발명은, 회로형성 기판상에 형성된 표면 수지층상에 경화물층(레지스트 패턴)을 형성시키기 위해 이용되었을 때에, 충분한 박리성을 얻을 수 있는 감광성 수지조성물을 제공하는 것을 목적으로 한다. 또한, 본 발명은, 이 감광성 수지조성물을 이용한 감광성 엘리먼트 및 이것을 이용한 프린트 배선판의 제조 방법을 제공하는 것을 목적으로 한다. Therefore, an object of the present invention is to provide a photosensitive resin composition which is capable of obtaining sufficient peelability when used to form a cured product layer (resist pattern) on a surface resin layer formed on a circuit-forming substrate. Moreover, an object of this invention is to provide the photosensitive element using this photosensitive resin composition, and the manufacturing method of the printed wiring board using the same.
과제를 해결하기 위한 수단Means to solve the problem
본 발명은, (A) 바인더 폴리머, (B) 중합 가능한 에틸렌성 불포화기를 가지는 광중합성 화합물 및 (C) 광중합 개시제를 함유하는 감광성 수지조성물로서, (B) 성분이, 하기 일반식(1)로 표시되는 비스페놀A계 (메타)아크릴레이트 화합물, 하기 일반식(2)로 표시되는 알콕시화 트리메티롤프로판트리아크릴레이트 화합물, 및 하기 일반식(3)으로 표시되는 노닐페닐폴리알킬렌글리콜아크릴레이트 화합물을 포함하는 것이다.The present invention provides a photosensitive resin composition containing (A) a binder polymer, (B) a photopolymerizable compound having a polymerizable ethylenically unsaturated group, and (C) a photopolymerization initiator, wherein (B) component is represented by the following general formula (1) Bisphenol-A (meth) acrylate compound shown, the alkoxylated trimetholpropane triacrylate compound represented by following General formula (2), and the nonylphenyl polyalkylene glycol acrylate represented by following General formula (3) It includes a compound.
[화학식 1][Formula 1]
식(1) 중, X1 및 X2는 각각 독립적으로 2~6인 알킬렌기를 나타내고, R1 및 R2는 각각 독립적으로 수소원자 또는 메틸기를 나타내고, p 및 q는 p+q=4~40이 되는 양의 정수를 나타내고, 식(2) 중, X3, X4 및 X5는 각각 독립적으로 2~6인 알킬렌기를 나타내고, R3, R4 및 R5는 각각 독립적으로 수소원자 또는 메틸기를 나타내고, k, m 및 n은 k+m+n=3~30이 되는 양의 정수를 나타내고, 식(3) 중, X6는 탄소수 2~6인 알킬렌기를 나타내고, R6는 수소원자 또는 메틸기를 나타내고, r은 1~20의 정수를 나타낸다.In formula (1), X <1> and X <2> respectively independently show the alkylene group which is 2-6, R <1> and R <2> respectively independently represent a hydrogen atom or a methyl group, p and q are p + q = 4-40 The positive integer to be represented is represented, In formula (2), X <3> , X <4> and X <5> show a 2-6 alkylene group each independently, R <3> , R <4> and R <5> are respectively independently a hydrogen atom or a methyl group In the formula (3), X 6 represents an alkylene group having 2 to 6 carbon atoms, R 6 represents a hydrogen atom or a methyl group, and k, m and n represent a positive integer such that k + m + n = 3 to 30. and r represent the integer of 1-20.
본 발명의 감광성 엘리먼트는, 지지체와, 상기 지지체 상에 설치된 상기 본 발명의 감광성 수지조성물로 이루어지는 감광층을 구비한다.The photosensitive element of this invention is equipped with a support body and the photosensitive layer which consists of the photosensitive resin composition of the said invention provided on the said support body.
본 발명의 감광성 수지조성물 및 감광성 엘리먼트는, 광중합성 화합물로서 상기 특정 화합물을 병용함에 따라, 회로형성 기판상에 형성된 표면 수지층상에 경화물층(레지스트 패턴)을 형성시키기 위해서 사용되었을 때에, 충분한 형상 추종성 및 박리성을 얻는 것이 가능하게 되었다.When the photosensitive resin composition and the photosensitive element of this invention are used for forming hardened | cured material layer (resist pattern) on the surface resin layer formed on the circuit formation board | substrate by using together the said specific compound as a photopolymerizable compound, a sufficient shape It has become possible to obtain followability and peelability.
본 발명의 감광성 수지조성물 및 감광성 엘리먼트에 있어서, (C) 성분은 2,4,5-트리아릴이미다졸 이량체를 포함하는 것이 바람직하다. 또한, (A) 성분 및 (B) 성분의 합계량을 100중량부로 했을 때에, (A) 성분의 양이 40~80중량부이며, (B) 성분의 양이 20~60중량부이며, (C) 성분의 양이 0.1~20중량부인 것이 바람직하다.In the photosensitive resin composition and the photosensitive element of this invention, it is preferable that (C) component contains 2,4,5-triaryl imidazole dimer. Moreover, when the total amount of (A) component and (B) component is 100 weight part, the quantity of (A) component is 40-80 weight part, the quantity of (B) component is 20-60 weight part, (C It is preferable that the quantity of the component is 0.1-20 weight part.
상기 본 발명의 감광성 엘리먼트의 감광층은, 파장 365nm의 자외선에 대한 투과율이 5~75%인 것이 보다 바람직하다.As for the photosensitive layer of the photosensitive element of the said invention, it is more preferable that the transmittance | permeability with respect to the ultraviolet-ray of wavelength 365nm is 5-75%.
본 발명은, 회로형성용 기판 및 회로형성용 기판상에 형성되어 있는 회로 패턴을 가지는 회로형성 기판과 회로형성 기판상에 있어서 회로 패턴이 노출하도록 형성되어 있는 표면 수지층을 구비하는 제 1의 적층 기판의 표면 수지층측의 면상에, 상기 어느 하나의 감광성 수지조성물로 이루어져 미리 성형된 감광층을 적층하는 제 1의 공정과, 감광층의 소정 부분에 활성 광선을 조사하고 나서 현상하여 패터닝된 경화물층을 형성시켜, 회로형성 기판상에 표면 수지층 및 경화물층을 이 순서대로 구비한 제 2의 적층 기판을 얻는 제 2의 공정과, 제 2의 적층 기판에 대해서 무전해 도금을 실시하여 회로 패턴상에 도금층을 형성하는 제 3의 공정을 구비한 프린트 배선판의 제조 방법이다.The present invention provides a first laminate comprising a circuit forming substrate having a circuit forming substrate and a circuit pattern formed on the circuit forming substrate and a surface resin layer formed to expose the circuit pattern on the circuit forming substrate. On the surface of the surface resin layer side of a board | substrate, the 1st process of laminating | stacking the previously formed photosensitive layer which consists of said any one photosensitive resin composition, and developing and patterning after irradiating actinic light to the predetermined part of the photosensitive layer A second step of forming a cargo layer, obtaining a second laminated substrate having a surface resin layer and a cured product layer in this order on the circuit forming substrate, and electroless plating to the second laminated substrate, It is a manufacturing method of the printed wiring board provided with the 3rd process of forming a plating layer on a circuit pattern.
이 제조 방법에 있어서는, 경화물층이, 회로 패턴의 일부가 노출하도록 패터닝되어, 회로 패턴이 노출하고 있는 부분의 전면에 도금층을 형성하는 것이 바람직하다.In this manufacturing method, it is preferable that the hardened | cured material layer is patterned so that a part of circuit pattern may expose and to form a plating layer on the whole surface of the part which a circuit pattern exposes.
발명의 효과Effects of the Invention
본 발명의 감광성 수지조성물 및 감광성 엘리먼트는, 회로형성 기판상에 형성된 표면 수지층상에 경화물층(레지스트 패턴)을 형성시키기 위해서 사용되었을 때에, 충분한 박리성을 얻는 것이 가능하다. 또한, 본 발명의 감광성 수지조성물 및 감광성 엘리먼트는, 해상도, 밀착성, 도금 내성 및 형상 추종성의 점에서도 뛰어나다.When the photosensitive resin composition and the photosensitive element of this invention are used in order to form hardened | cured material layer (resist pattern) on the surface resin layer formed on the circuit formation board | substrate, sufficient peelability can be obtained. Moreover, the photosensitive resin composition and the photosensitive element of this invention are excellent also in the point of the resolution, adhesiveness, plating tolerance, and shape following.
또한, 본 발명의 프린트 배선판의 제조 방법은, 감광층(감광성 수지조성물층)의 매입성(埋入性)과 경화물층(레지스트 패턴)의 박리성이 양호하고, 또한 도금욕의 오염을 충분히 저감시킬 수 있다.Moreover, the manufacturing method of the printed wiring board of this invention is good in the embedding property of the photosensitive layer (photosensitive resin composition layer), and the peelability of hardened | cured material layer (resist pattern), and is enough to prevent the contamination of a plating bath. Can be reduced.
[도 1] 본 발명의 감광성 엘리먼트의 일실시형태를 나타내는 단면도이다.BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows one Embodiment of the photosensitive element of this invention.
[도 2] 본 발명의 프린트 배선판의 제조 방법의 일실시형태를 나타내는 공정도이다.2 is a flowchart showing one embodiment of a method for manufacturing a printed wiring board of the present invention.
[도 3] 본 발명의 프린트 배선판의 제조 방법의 다른 실시형태(제 2의 공정까지)를 나타내는 공정도이다.It is process drawing which shows another embodiment (until the 2nd process) of the manufacturing method of the printed wiring board of this invention.
[도 4] 본 발명의 프린트 배선판의 제조 방법의 다른 실시형태(제 3의 공정)를 나타내는 공정도이다.It is process drawing which shows another embodiment (third process) of the manufacturing method of the printed wiring board of this invention.
[도 5] 격자상 포토툴(마스크 패턴)을 나타내는 상면도이다.Fig. 5 is a top view showing a lattice phototool (mask pattern).
부호의 설명Explanation of the sign
1…감광성 엘리멘트, 10…지지체, 20…감광층, 22…노광부, 24…경화물층(레지스트 패턴), 30…보호필름, 40…회로형성용 기판, 50, 51…회로패턴, 50a, 51a…노출부, 55…도금층, 55a…Ni도금층, 55b…Au 도금층, 60…표면수지층, 70…개구부, 80…회로형성 기판, 90…마스크 패턴, 90a…차폐부, 90b…투명부, 92…활성광선, 100…제 1의 적층기판, 200…제 2의 적층기판, 300…프린트 배선판One… Photosensitive element, 10... Support 20... Photosensitive layer, 22... Exposure section 24... Cured product layer (resist pattern), 30... Protective film, 40... Circuit forming substrate, 50, 51... Circuit pattern, 50a, 51a... Exposed portion, 55... Plating layer, 55a... Ni plated layer, 55b... Au plating layer, 60... Surface resin layer, 70... Opening, 80... Circuit forming substrate, 90... Mask pattern, 90a... Shield, 90b... Transparent portion, 92... Active light, 100.. First laminated substrate, 200... Second laminated substrate, 300... Printed wiring board
발명을 실시하기Implement the invention 위한 최선의 형태 Best form for
이하, 본 발명의 바람직한 실시형태에 대해 상세하게 설명한다. 또한, 본 명세서에 있어서의(메타)아크릴산은 아크릴산 및 그것에 대응하는 메타크릴산을 의미하고, (메타)아크릴레이트는 아크릴레이트 및 그것에 대응하는 메타크릴레이트를 의미하고, (메타)아크릴로일기는 아크릴로일기 및 그것에 대응하는 메타크릴로일기를 의미한다.EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described in detail. In addition, (meth) acrylic acid in this specification means acrylic acid and methacrylic acid corresponding to it, (meth) acrylate means acrylate and methacrylate corresponding to it, and the (meth) acryloyl group It means acryloyl group and the methacryloyl group corresponding to it.
본 발명에 있어서의 (A)성분의 바인더 폴리머로서는, 감광성 수지조성물의 바인더로서 기능하는 폴리머이면 특별히 제한 없이 사용할 수 있다. 구체적으로는, 예를 들면, 아크릴계 수지, 스티렌계 수지, 에폭시계 수지, 아미드계 수지, 아미드 에폭시계 수지, 알키드계 수지, 페놀계 수지를 들 수 있다. 알칼리 현상성의 견지에서는, 아크릴계 수지가 바람직하다. 이들은 단독으로 또는 2종 이상을 조합시켜서 사용된다.As the binder polymer of the component (A) in the present invention, any polymer that functions as a binder of the photosensitive resin composition can be used without particular limitation. Specific examples thereof include acrylic resins, styrene resins, epoxy resins, amide resins, amide epoxy resins, alkyd resins, and phenolic resins. In view of alkali developability, acrylic resins are preferred. These are used individually or in combination of 2 or more types.
바인더 폴리머는, 예를 들면, 중합성 단량체를 래디칼 중합시킴으로써 제조할 수 있다. 상기 중합성 단량체로서는, 예를 들면, 스티렌, 비닐톨루엔, α-메틸스티렌 등의 α-위치 혹은 방향족환에 있어서 치환되어 있는 중합가능한 스티렌 유도체, 디아세톤아크릴아미드 등의 아크릴아미드, 아크릴로니트릴, 비닐-n-부틸에테르 등의 비닐 알코올의 에스테르류, (메타)아크릴산 알킬에스테르, (메타)아크릴산 테트라히드로풀푸릴에스테르, (메타)아크릴산 디메틸아미노에틸에스테르, (메타)아크릴산 디에틸아미노에틸에스테르, (메타)아크릴산 글리시딜에스테르, 2,2,2-트리플루오로에틸(메타)아크릴레이트, 2,2,3,3-테트라플루오로프로필(메타)아크릴레이트, (메타)아크릴산, α-브로모(메타)아크릴산, α-클로로(메타)아크릴산, β-푸릴(메타)아크릴산, β-스티릴(메타)아크릴산, 말레인산, 말레인산 무수물, 말레인산 모노메틸, 말레인산 모노에틸, 말레인산 모노이소프로필 등의 말레인산 모노에스테르, 푸말산, 계피산, α-시아노계피산, 이타콘산, 크로톤산, 프로피올산을 들 수 있다.A binder polymer can be manufactured by radically polymerizing a polymerizable monomer, for example. As said polymerizable monomer, For example, acrylamide, acrylonitrile, such as the polymerizable styrene derivative substituted by the alpha-position or aromatic ring, such as styrene, vinyltoluene, (alpha) -methylstyrene, diacetone acrylamide, Esters of vinyl alcohols such as vinyl-n-butyl ether, (meth) acrylic acid alkyl esters, (meth) acrylic acid tetrahydrofulfuryl esters, (meth) acrylic acid dimethylaminoethyl esters, (meth) acrylic acid diethylaminoethyl esters, (Meth) acrylic acid glycidyl ester, 2,2,2-trifluoroethyl (meth) acrylate, 2,2,3,3-tetrafluoropropyl (meth) acrylate, (meth) acrylic acid, α- Bromo (meth) acrylic acid, α-chloro (meth) acrylic acid, β-furyl (meth) acrylic acid, β-styryl (meth) acrylic acid, maleic acid, maleic anhydride, monomethyl maleate, monoethyl maleate, male There may be mentioned phosphoric acid mono-isopropyl maleate such as monomethyl ester, fumaric acid, cinnamic acid, α- cyano-cinnamic acid, itaconic acid, crotonic acid, propionic olsan.
상기 (메타)아크릴산 알킬에스테르는, 예를 들면, 하기 일반식(4)로 표시된 다. 식(4) 중, R7은 수소원자 또는 메틸기를 나타내고, R8은 치환기를 가지고 있어도 좋은 탄소수 1~12인 알킬기를 나타낸다. R8이 가지는 치환기로서는, 수산기, 에폭시기, 할로겐기 등이 있다.The said (meth) acrylic-acid alkylester is represented by following General formula (4), for example. In formula (4), R <7> represents a hydrogen atom or a methyl group, and R <8> represents the C1-C12 alkyl group which may have a substituent. As a substituent which R <8> has, there are a hydroxyl group, an epoxy group, a halogen group.
[화학식 2][Formula 2]
R8 중의 알킬기로서는, 예를 들면, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기 및 이들의 구조 이성체를 들 수 있다.Examples of the alkyl group in R 8 include a methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group and structural isomers thereof. Can be.
식(4)로 표시되는 (메타)아크릴산 알킬에스테르의 구체예로서는, (메타)아크릴산 메틸에스테르, (메타)아크릴산 에틸에스테르, (메타)아크릴산 프로필에스테르, (메타)아크릴산 부틸에스테르, (메타)아크릴산 펜틸에스테르, (메타)아크릴산 펜틸에스테르, (메타)아크릴산 헵틸에스테르, (메타)아크릴산 옥틸에스테르, (메타)아크릴산 2-에틸헥실에스테르, (메타)아크릴산 노닐에스테르, (메타)아크릴산 데실에스테르, (메타)아크릴산 운데실에스테르, (메타)아크릴산 도데실에스테르를 들 수 있다. 이것들은 단독으로 또는 2종 이상을 조합시켜서 사용된다.As a specific example of the (meth) acrylic-acid alkylester represented by Formula (4), (meth) acrylic-acid methyl ester, (meth) acrylic-acid ethyl ester, (meth) acrylic-acid propyl ester, (meth) acrylic-acid butyl ester, (meth) acrylic-acid pentyl Ester, (meth) acrylic acid pentyl ester, (meth) acrylic acid heptyl ester, (meth) acrylic acid octyl ester, (meth) acrylic acid 2-ethylhexyl ester, (meth) acrylic acid nonyl ester, (meth) acrylic acid decyl ester, (meth) Acrylic acid undecyl ester and (meth) acrylic acid dodecyl ester are mentioned. These are used individually or in combination of 2 or more types.
바인더 폴리머는, 알칼리 현상성의 견지에서, 카르복실기를 가지는 것이 바람직하다. 카르복실기를 가지는 바인더 폴리머는, 예를 들면, 카르복실기를 가지는 중합성 단량체와 그 외의 중합성 단량체를 래디칼 중합시킴으로써 제조할 수 있다.It is preferable that a binder polymer has a carboxyl group from an alkali developable viewpoint. The binder polymer which has a carboxyl group can be manufactured by radically polymerizing the polymerizable monomer which has a carboxyl group, and another polymerizable monomer, for example.
또한, 바인더 폴리머는, 내약품성의 견지에서 스티렌 또는 스티렌 유도체를 모노머 단위로서 함유하는 것이 바람직하다. 스티렌 또는 스티렌 유도체를 공중합성분으로 하여 밀착성 및 박리성을 모두 양호하기 위해서는, 바인더 폴리머가 이것들을 2~40중량% 포함하는 것이 바람직하고, 3~28중량% 포함하는 것이 보다 바람직하고, 5~27중량% 포함하는 것이 특히 바람직하다. 이 함유량이 2중량% 미만이면 밀착성이 저하하는 경향이 있고, 40중량%를 초과하면 박리편이 커져서, 박리 시간이 길어지는 경향이 있다.In addition, the binder polymer preferably contains styrene or a styrene derivative as a monomer unit in view of chemical resistance. In order for both adhesiveness and peelability to be favorable by making a styrene or a styrene derivative into a copolymerization component, it is preferable that a binder polymer contains these 2-40 weight%, It is more preferable that it contains 3-28 weight%, It is 5-27 It is particularly preferable to comprise by weight. When this content is less than 2 weight%, there exists a tendency for adhesiveness to fall, and when it exceeds 40 weight%, a peeling piece becomes large and there exists a tendency for peeling time to become long.
바인더 폴리머의 중량 평균 분자량은, 20000~30000O인 것이 바람직하고, 40000~15OOOO인 것이 보다 바람직하다. 이 중량 평균 분자량이 20000 미만이면 내현상액성이 저하하는 경향이 있고, 300000을 초과하면 현상 시간이 길어지는 경향이 있다.It is preferable that it is 20000-30000O, and, as for the weight average molecular weight of a binder polymer, it is more preferable that it is 40000-150000. When this weight average molecular weight is less than 20000, there exists a tendency for developing solution resistance to fall, and when it exceeds 300000, there exists a tendency for developing time to become long.
바인더 폴리머의 산가는, 30~250mgKOH/g인 것이 바람직하고, 50~200mgKOH/g인 것이 보다 바람직하다. 이 산가가 30mgKOH/g 미만이면 현상 시간이 길어지는 경향이 있고, 250mgKOH/g를 초과하면 광경화한 레지스트 패턴의 내현상액성이 저하하는 경향이 있다.It is preferable that it is 30-250 mgKOH / g, and, as for the acid value of a binder polymer, it is more preferable that it is 50-200 mgKOH / g. If the acid value is less than 30 mgKOH / g, the developing time tends to be long, and if it exceeds 250 mgKOH / g, the developing solution resistance of the photocured resist pattern tends to decrease.
이들의 바인더 폴리머는, 단독으로 또는 2종류 이상을 조합시켜서 사용된다. 2종류 이상을 조합시켜서 사용하는 경우의 바인더 폴리머의 조합으로서는, 예를 들면, 다른 공중합성분으로 이루어지는 2종류 이상의 바인더 폴리머, 다른 중량 평균 분자량의 2종류 이상의 바인더 폴리머, 다른 분산도의 2종류 이상의 바인더 폴리머를 들 수 있다.These binder polymers are used individually or in combination of 2 or more types. As a combination of the binder polymers when using combining two or more types, for example, two or more types of binder polymers which consist of another copolymerization component, two or more types of binder polymers of different weight average molecular weight, and two or more types of binders of different dispersion degrees And polymers.
(B) 성분인 중합 가능한 에틸렌성 불포화기를 가지는 광중합성 화합물은, 상기 일반식(1)로 표시되는 비스페놀A계 (메타)아크릴레이트 화합물, 상기 일반식(2)로 표시되는 알콕시화 트리메티롤프로판트리아크릴레이트 화합물, 및 상기 일반식(3)으로 표시되는 노닐페닐폴리알킬렌글리콜아크릴레이트 화합물을 포함한다.The photopolymerizable compound which has a polymerizable ethylenically unsaturated group which is (B) component is the bisphenol-A (meth) acrylate compound represented by the said General formula (1), and the alkoxylated trimetholol represented by the said General formula (2). A propane triacrylate compound and the nonylphenyl polyalkylene glycol acrylate compound represented by the said General formula (3) are included.
식(1) 중, X1 및 X2는 각각 독립적으로 탄소수 2~6인 알킬렌기를 나타내고, R1 및 R2는 각각 독립적으로 수소원자 또는 메틸기를 나타내고, p 및 q는 p+q=4~40이 되는 양의 정수를 나타낸다. X1 또는 X2의 탄소수가 2~6인 범위내에 없거나, 또는 p+q가 4~40의 범위내에 없는 경우, 감광층의 밀착성을 충분히 얻을 수 있기 어렵거나, 경화물층(레지스트 패턴)의 박리 시간이 길어지는 경향이 있다. 밀착성 및 박리성의 관점에서, X1 및 X2는 에틸렌기인 것이 바람직하고, p+q가 10~30인 것이 바람직하다.In formula (1), X <1> and X <2> represent a C2-C6 alkylene group each independently, R <1> and R <2> respectively independently represent a hydrogen atom or a methyl group, p and q are p + q = 4-40 The positive integer to become. When the carbon number of X 1 or X 2 is not in the range of 2 to 6 or p + q is not in the range of 4 to 40, it is difficult to sufficiently obtain the adhesiveness of the photosensitive layer or the peeling time of the cured product layer (resist pattern). This tends to be long. It is preferable that X <1> and X <2> are an ethylene group from a viewpoint of adhesiveness and peelability, and it is preferable that p + q is 10-30.
식(1)의 화합물의 적합한 구체예로서는, 비스페놀A폴리옥시에틸렌디메타크릴레이트(2,2-비스(4-((메타)아크릴옥시폴리에톡시)페닐)프로판)가 있다. 2,2-비스(4-((메타)아크릴옥시폴리에톡시)페닐)프로판으로서는, 예를 들면, 2,2-비스(4-((메타)아크릴옥시디에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시트리에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시테트라에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시펜타에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시헥사에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시헵타에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시옥타에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시노나에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시데카에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시운데카에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시도데카에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시트리데카에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시테트라데카에톡시)페닐)프로판, 2,2-비스(4-((메타)아크릴옥시펜타데카에톡시)페닐)프로판을 들 수 있다. 2,2-비스(4-(메타크릴옥시펜타에톡시)페닐)프로판은, BPE-500(신나카무라화학공업주식회사 제조, 상품명)으로서 상업적으로 입수 가능하고, 2,2-비스(4-(메타크릴옥시펜타데카에톡시)페닐)프로판은, BPE-1300(신나카무라화학공업주식회사 제조, 상품명)으로서 상업적으로 입수 가능하다. 이들은 단독으로 또는 2종류 이상을 조합시켜서 사용된다.Suitable specific examples of the compound of formula (1) include bisphenol A polyoxyethylene dimethacrylate (2,2-bis (4-((meth) acryloxypolyethoxy) phenyl) propane). As 2, 2-bis (4- ((meth) acryloxy polyethoxy) phenyl) propane, it is 2, 2-bis (4- ((meth) acryloxy diethoxy) phenyl) propane, 2, 2-bis (4-((meth) acryloxytriethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxytetraethoxy) phenyl) propane, 2,2-bis (4- ((Meth) acryloxypentaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxyhexaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxy Heptaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxyoctaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxynonaethoxy) phenyl) Propane, 2,2-bis (4-((meth) acryloxydecaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxyundecethoxy) phenyl) propane, 2,2 -Bis (4-((meth) acryloxydodecaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxytridecaethoxy) phenyl) propane, 2,2-bis (4 -((Meth) acryloxy Tetradecaethoxy) phenyl) propane and 2,2-bis (4-((meth) acryloxypentadecaethoxy) phenyl) propane. 2,2-bis (4- (methacryloxypentaethoxy) phenyl) propane is commercially available as BPE-500 (manufactured by Shinnakamura Chemical Co., Ltd., brand name), and 2,2-bis (4- ( Methacryloxypentadecaethoxy) phenyl) propane is commercially available as BPE-1300 (made by Shin-Nakamura Chemical Co., Ltd., brand name). These are used individually or in combination of 2 or more types.
식(2) 중, X3, X4 및 X5는 각각 독립적으로 탄소수 2~6인 알킬렌기를 나타내고, R3, R4 및 R5는 각각 독립적으로 수소원자 또는 메틸기를 나타내고, k, m 및 n은 k+m+n=3~30으로 이루어지는 양의 정수를 나타낸다. X3, X4 또는 X5의 탄소수가 2~6인 범위내에 없거나, 또는 k+m+n=3~30의 범위내에 없는 경우, 경화물층(레지스트 패턴)의 강인성이나 박리성이 저하하는 경향이 있다. 경화물층(레지스트 패턴)의 강인성과 박리성을 모두 향상시킬 수 있는 관점에서, X3, X4 및 X5로서는 에틸렌기가 바람직하다. 또한, k+m+n=6~27의 범위내인 것이 바람직하고, 9~27의 범 위내인 것이 보다 바람직하다. 식(2)의 화합물의 적합한 구체예로서는, 에톡시화트리메티롤프로판트리아크릴레이트가 있다.In formula (2), X <3> , X <4> and X <5> represent a C2-C6 alkylene group each independently, R <3> , R <4> and R <5> show a hydrogen atom or a methyl group each independently, k, m And n represents a positive integer consisting of k + m + n = 3 to 30. When the carbon number of X 3 , X 4, or X 5 is not in the range of 2 to 6 or is not in the range of k + m + n = 3 to 30, the toughness and peelability of the cured product layer (resist pattern) tend to be lowered. From the viewpoint of improving both the toughness and the peelability of the cured product layer (resist pattern), an ethylene group is preferable as X 3 , X 4 and X 5 . Moreover, it is preferable to exist in the range of k + m + n = 6-27, and it is more preferable to exist in the range of 9-27. As a suitable specific example of the compound of Formula (2), there is ethoxylated trimetholol propane triacrylate.
식(3) 중, X6은 탄소수 2~6인 알킬렌기를 나타내고, R6은 수소원자 또는 메틸기를 나타내고, r은 1~20인 정수를 나타낸다. X6의 탄소수가 2~6인 범위내에 없거나, 또는 r이 1~20의 범위내에 없는 경우, 경화물층(레지스트 패턴)의 박리 잔사가 생기거나, 박리 시간이 길어지는 경향이 있다. 경화물층(레지스트 패턴)의 박리 잔사와 박리성을 동시에 향상할 수 있는 관점으로부터, X6로서는 에틸렌기가 바람직하다. 또한, r이 2~16의 범위내인 것이 바람직하고, 4~12의 범위내인 것이 보다 바람직하다. 식(3)의 화합물의 적합한 구체예로서는, 노닐페닐폴리에틸렌글리콜아크릴레이트가 있다.In formula (3), X <6> represents a C2-C6 alkylene group, R <6> represents a hydrogen atom or a methyl group, and r represents the integer of 1-20. When the carbon number of X 6 is not in the range of 2 to 6, or r is not in the range of 1 to 20, the peeling residue of the cured product layer (resist pattern) occurs or the peeling time tends to be long. From the viewpoint of improving the peeling residue and the peelability of the cured product layer (resist pattern) at the same time, an ethylene group is preferable as X 6 . Moreover, it is preferable that r is in the range of 2-16, and it is more preferable to exist in the range of 4-12. Suitable specific examples of the compound of formula (3) include nonylphenyl polyethylene glycol acrylate.
(B) 성분은, 상기 이외의 광중합성 화합물을 더 포함하고 있어도 좋다. 다른 광중합성 화합물로서는, 다가알코올에 α,β-불포화카르본산을 반응시켜 얻어지는 화합물, 글리시딜기 함유 화합물에 α,β-불포화카르본산을 반응시켜 얻어지는 화합물, γ-클로로-β-히드록시프로필-β'-(메타)아크릴로일옥시에틸-o-프탈레이트, β-히드록시에틸-β'-(메타)아크릴로일옥시에틸-o-프탈레이트, (메타)아크릴산 알킬에스테르 등을 들 수 있다.(B) component may further contain the photopolymerizable compound of that excepting the above. As another photopolymerizable compound, the compound obtained by making (alpha), (beta)-unsaturated carboxylic acid react with polyhydric alcohol, the compound obtained by making (alpha), (beta)-unsaturated carboxylic acid react with glycidyl group containing compound, (gamma)-chloro- (beta)-hydroxypropyl -(beta)-(meth) acryloyloxyethyl-o-phthalate, (beta) -hydroxyethyl- (beta) '-(meth) acryloyloxyethyl-o-phthalate, the (meth) acrylic-acid alkylester, etc. are mentioned. .
(C) 성분의 광중합 개시제로서는, 예를 들면, 벤조페논, N,N'-테트라메틸-4,4'-디아미노벤조페논(미히라케톤), N,N'-테트라에틸-4,4'-디아미노벤조페논, 4-메톡시-4'-디메틸아미노벤조페논, 2-벤질-2-디메틸아미노-1-(4-몰폴리노페닐)-부타 논-1,2-메틸-1-[4-(메틸티오)페닐]-2-몰폴리노-프로파논-1 등의 방향족 케톤, 2-에틸안트라퀴논, 페난트렌퀴논, 2-tert-부틸안트라퀴논, 옥타메틸안트라퀴논, 1,2-벤즈안트라퀴논, 2,3-벤즈안트라퀴논, 2-페닐안트라퀴논, 2,3-디페닐안트라퀴논, 1-클로로안트라퀴논, 2-메틸안트라퀴논, 1,4-나프토퀴논, 9,10-페난트라퀴논, 2-메틸-1,4-나프토퀴논, 2,3-디메틸안트라퀴논 등의 퀴논류, 벤조인메틸에테르, 벤조인에틸에테르, 벤조인페닐에테르 등의 벤조인 에테르화합물, 벤조인, 메틸벤조인, 에틸벤조인 등의 벤조인 화합물, 벤질디메틸케탈 등의 벤질 유도체, 2-(o-클로로페닐)-4,5-디페닐이미다졸 이량체, 2-(o-클로로페닐)-4,5-디(메톡시페닐)이미다졸 이량체, 2-(o-플루오로페닐)-4,5-디페닐이미다졸 이량체, 2-(o-메톡시페닐)-4,5-디페닐이미다졸 이량체, 2-(p-메톡시페닐)-4,5-디페닐이미다졸 이량체 등의 2,4,5-트리아릴이미다졸 이량체, 9-페닐아크리딘, 1,7-비스(9,9'-아크리디닐)헵탄 등의 아크리딘 유도체, N-페닐글리신, N-페닐글리신 유도체, 쿠마린계 화합물을 들 수 있다. 또한, 디에틸티옥산톤과 디메틸아미노벤조산을 조합시키는 것과 같이, 티옥산톤계 화합물과 3급 아민화합물을 조합시켜도 좋다. 이들은, 단독으로 또는 2종류 이상을 조합시켜서 사용된다.As a photoinitiator of (C) component, for example, benzophenone, N, N'- tetramethyl-4,4'- diamino benzophenone (mihiraketone), N, N'- tetraethyl-4,4 '-Diaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophenone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2-methyl-1 Aromatic ketones such as-[4- (methylthio) phenyl] -2-morpholino-propane-1, 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1 , 2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, Quinones such as 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethylanthraquinone, benzoin such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether Benzoin compounds such as ether compounds, benzoin, methyl benzoin, ethyl benzoin, benzyl dimethyl ketal, etc. Of benzyl derivatives, 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-di (methoxyphenyl) imidazole dimer, 2 -(o-fluorophenyl) -4,5-diphenylimidazole dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer, 2- (p-methoxy 2,4,5-triarylimidazole dimers such as phenyl) -4,5-diphenylimidazole dimer, 9-phenylacridine, 1,7-bis (9,9'-acrididi Acridine derivatives such as nil) heptane, N-phenylglycine, N-phenylglycine derivatives, and coumarin compounds. In addition, the thioxanthone type compound and the tertiary amine compound may be combined in such a manner as to combine diethyl thioxanthone and dimethylaminobenzoic acid. These are used individually or in combination of 2 or more types.
(C) 성분은, 이들 중에서도, 2,4,5-트리아릴이미다졸 이량체가 특히 바람직하다. 2,4,5-트리아릴이미다졸 이량체는, 2개의 2,4,5-트리아릴이미다졸의 아릴기의 치환기가 동일한 대칭화합물이어도 좋고, 치환기가 다른 비대칭화합물이어도 좋다.Among these, 2,4,5-triarylimidazole dimer is especially preferable among these. The 2,4,5-triarylimidazole dimer may be a symmetrical compound having the same substituent on the aryl groups of two 2,4,5-triarylimidazoles or an asymmetric compound having different substituents.
바인더 폴리머의 양은, (A) 성분 및 (B) 성분의 합계량 100중량부 중, 40~80 중량부로 하는 것이 바람직하고, 45~70중량부로 하는 것이 보다 바람직하다. 이 배합량이 40중량부 미만이면 광경화물이 무르기 쉽고, 감광성 엘리먼트로서 이용했을 경우에 도막성이 저하하는 경향이 있으며, 80중량부를 초과하면 광감도가 저하하는 경향이 있다.The amount of the binder polymer is preferably 40 to 80 parts by weight, more preferably 45 to 70 parts by weight in 100 parts by weight of the total amount of the components (A) and (B). When this compounding quantity is less than 40 weight part, a photocured product is easy to be soft, and when it uses as a photosensitive element, there exists a tendency for coating film property to fall, and when it exceeds 80 weight part, there exists a tendency for photosensitivity to fall.
(B) 성분의 광중합성 화합물의 양은, (A) 성분 및 (B) 성분의 합계량 100중량부 중, 20~60중량부로 하는 것이 바람직하고, 30~55중량부로 하는 것이 보다 바람직하다. 이 양이 20중량부 미만이면 광감도가 저하하는 경향이 있고, 60중량부를 초과하면 광경화물이 물러지는 경향이 있다.It is preferable to set it as 20-60 weight part in 100 mass parts of total amounts of (A) component and (B) component, and, as for the quantity of the photopolymerizable compound of (B) component, it is more preferable to set it as 30-55 weight part. When this amount is less than 20 weight part, there exists a tendency for photosensitivity to fall, and when it exceeds 60 weight part, there exists a tendency for a photocured product to fall off.
(B) 성분의 총량 중, 일반식 (1)로 표시되는 비스페놀A계 (메타)아크릴레이트 화합물의 함유 비율은, 10중량%~50중량%인 것이 바람직하고, 15중량%~40중량%인 것이 보다 바람직하다. 10중량% 미만이면 경화물층(레지스트 패턴)의 박리 잔여 억제의 효과가 작아지는 경향이 있고, 50중량%를 초과하면 감광층의 밀착 부족에 의한 도금 열화가 발생하는 경향이 있다.It is preferable that the content rate of the bisphenol-A (meth) acrylate compound represented by General formula (1) is 10 weight%-50 weight% in the total amount of (B) component, and is 15 weight%-40 weight% It is more preferable. If it is less than 10 weight%, the effect of suppression of peeling residual of a hardened | cured material layer (resist pattern) will tend to become small, and if it exceeds 50 weight%, plating deterioration by the inadequate adhesion of a photosensitive layer will tend to generate | occur | produce.
(B) 성분의 총량 중, 일반식(2)로 표시되는 알콕시화 트리메티롤프로판트리(메타)아크릴레이트 화합물의 함유 비율은, 20중량%~80중량%인 것이 바람직하고, 25중량%~75중량%인 것이 보다 바람직하고, 30중량%~65중량%인 것이 특히 바람직하다. 20중량% 미만이면 감광층의 밀착 부족에 의한 도금 열화가 발생하는 경향이 있고, 80중량%를 초과하면 경화물층(레지스트 패턴)의 박리 잔여가 생기거나 경화물층(레지스트 패턴)이 물러지는 경향이 있다.It is preferable that the content rate of the alkoxylated trimetholpropane tri (meth) acrylate compound represented by General formula (2) in the total amount of (B) component is 20 weight%-80 weight%, and 25 weight%- It is more preferable that it is 75 weight%, and it is especially preferable that it is 30 weight%-65 weight%. If it is less than 20 wt%, plating deterioration tends to occur due to insufficient adhesion of the photosensitive layer, and if it exceeds 80 wt%, peeling residue of the cured product layer (resist pattern) may occur or the cured product layer (resist pattern) may recede. There is a tendency.
(B) 성분의 총량 중, 일반식(3)으로 표시되는 노닐페닐폴리알킬렌글리콜(메 타)아크릴레이트 화합물의 함유 비율은, 10중량%~40중량%인 것이 바람직하고, 15중량%~30중량%인 것이 보다 바람직하다. 10중량% 미만이면 경화물층(레지스트 패턴)의 박리성이 악화하는 경향이 있고, 40중량%를 초과하면 감광층의 밀착 부족이 생기는 경향이 있다.It is preferable that the content rate of the nonylphenyl polyalkylene glycol (meth) acrylate compound represented by General formula (3) is 10 weight%-40 weight% in the total amount of (B) component, 15 weight%- It is more preferable that it is 30 weight%. When it is less than 10 weight%, there exists a tendency for the peelability of hardened | cured material layer (resist pattern) to deteriorate, and when it exceeds 40 weight%, there exists a tendency for the lack of adhesion of a photosensitive layer.
(C) 성분의 광중합 개시제의 양은, (A) 성분 및 (B) 성분의 합계량 100중량부에 대하여, 0.1~20중량부인 것이 바람직하고, 0.2~10중량부인 것이 보다 바람직하고, 2~5중량부인 것이 특히 바람직하다. 이 양이 0.1중량부 미만이면 광감도가 저하하는 경향이 있고, 20중량부를 초과하면 노광시에 감광층의 표면에서의 흡수가 증대하여 내부의 광경화가 불충분해지기 쉬운 경향이 있다.It is preferable that it is 0.1-20 weight part with respect to 100 weight part of total amounts of (A) component and (B) component, and, as for the quantity of the photoinitiator of (C) component, it is more preferable that it is 0.2-10 weight part, and it is 2-5 weight Particularly preferred is denial. When this amount is less than 0.1 part by weight, the photosensitivity tends to decrease, while when it exceeds 20 parts by weight, absorption on the surface of the photosensitive layer increases during exposure and tends to be insufficient for internal photocuring.
감광성 수지조성물은, 이상과 같은 성분 외, 필요에 따라서, 말라카이트 그린 등의 염료, 트리브로모페닐술폰, 로이코크리스탈바이올렛 등의 광발색제, 열발색 방지제, p-톨루엔술폰아미드 등의 가소제, 안료, 충전제, 소포제, 난연제, 안정 제, 밀착성 부여제, 레벨링제, 박리 촉진제, 산화 방지제, 향료, 이미징제, 열가교제 등을 함유하고 있어도 좋다. 이들의 성분의 양은 (A) 성분 및 (B) 성분의 합계량 100중량부에 대하여 각각 0.Ol~20중량부 정도인 것이 바람직하다. 이들은, 단독으로 또는 2종류 이상을 조합시켜서 사용된다.The photosensitive resin composition, in addition to the above components, if necessary, dyes such as malachite green, photochromic agents such as tribromophenyl sulfone, leuco crystal violet, thermochromic agents, plasticizers such as p-toluenesulfonamide, pigments, It may contain a filler, an antifoaming agent, a flame retardant, a stabilizer, an adhesion imparting agent, a leveling agent, a peeling accelerator, an antioxidant, a fragrance, an imaging agent, a thermal crosslinking agent and the like. It is preferable that the quantity of these components is about 0.01-20 weight part with respect to 100 weight part of total amounts of (A) component and (B) component, respectively. These are used individually or in combination of 2 or more types.
본 발명의 감광성 수지조성물은, 필요에 따라서, 메탄올, 에탄올, 아세톤, 메틸에틸케톤, 메틸셀로솔브, 에틸셀로솔브, 톨루엔, N,N-디메틸포름아미드, 프로필렌글리콜모노메틸에테르 등의 용제 또는 이들의 혼합 용제에 용해하여 고형분 30~60중량% 정도의 용액 상태로 적절하게 사용된다.The photosensitive resin composition of this invention is solvent, such as methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N, N- dimethylformamide, and propylene glycol monomethyl ether as needed. Or it melt | dissolves in these mixed solvents and is used suitably in the solution state about 30 to 60 weight% of solid content.
이 감광성 수지조성물의 용액은, 예를 들면, 금속면상에 도포하고, 건조하여 감광층을 형성하고, 필요에 따라서 보호 필름을 피복하여 경화물층(레지스트 패턴)의 형성에 사용된다. 이 경우의 금속으로서는, 특별히 제한은 없지만, 구리, 구리계 합금, 니켈, 크롬, 철, 스텐레스 등의 철계 합금을 들 수 있고, 경화물층(레지스트 패턴)과의 밀착성 및 전자 도전성의 견지에서 구리, 구리계 합금, 철계 합금인 것이 바람직하다.The solution of the photosensitive resin composition is, for example, coated on a metal surface, dried to form a photosensitive layer, and coated with a protective film as necessary to form a cured product layer (resist pattern). Although there is no restriction | limiting in particular as a metal in this case, Iron-type alloys, such as copper, a copper-type alloy, nickel, chromium, iron, stainless steel, are mentioned, Copper in terms of adhesiveness with a hardened | cured material layer (resist pattern), and an electronic conductivity It is preferable that they are a copper type alloy and an iron type alloy.
또는, 본 발명의 감광성 수지조성물은, 감광성 엘리먼트 상태로 적합하게 사용된다. 도 1은, 본 발명의 감광성 엘리먼트의 적합한 실시형태를 나타내는 모식 단면도이다. 도 1에 나타낸 감광성 엘리먼트(1)는, 지지체(10)와 지지체(10)상에 설치된 감광층(20)과 감광층(20)상에 설치된 보호 필름(30)으로 구성된다.Or the photosensitive resin composition of this invention is used suitably in the photosensitive element state. 1: is a schematic cross section which shows suitable embodiment of the photosensitive element of this invention. The photosensitive element 1 shown in FIG. 1 is comprised from the support body 10, the photosensitive layer 20 provided on the support body 10, and the protective film 30 provided on the photosensitive layer 20. As shown in FIG.
감광층(20)은, 상술한 본 발명의 감광성 수지조성물로 이루어진다. 감광층(20)의 두께는, 용도에 따라 다르지만, 1~100㎛인 것이 바람직하고, 1~50㎛인 것이 보다 바람직하다. 이 두께가 1㎛ 미만이면 공업적으로 도공(塗工)이 곤란해지는 경향이 있고, 100㎛를 초과하면 본 발명의 효과가 적어지므로, 접착력, 해상도가 저하하는 경향이 있다.The photosensitive layer 20 consists of the photosensitive resin composition of this invention mentioned above. Although the thickness of the photosensitive layer 20 changes with a use, it is preferable that it is 1-100 micrometers, and it is more preferable that it is 1-50 micrometers. When this thickness is less than 1 micrometer, there exists a tendency for coating to become industrially difficult, and when it exceeds 100 micrometers, since the effect of this invention becomes less, there exists a tendency for adhesive force and the resolution to fall.
감광층(20)은 파장 365nm의 자외선에 대한 투과율이 5~75%인 것이 바람직하고, 7~60%인 것이 보다 바람직하고, 10~40%인 것이 특히 바람직하다. 이 투과율이 5% 미만이면 밀착성이 저하하는 경향이 있고, 75%를 초과하면 해상도가 저하하는 경향이 있다. 이 투과율은, UV 분광계에 의해 측정할 수 있다. UV분광계로서는, 주식회사 히다치 제작소 제조 228A형 W빔 분광 광도계 등을 들 수 있다.It is preferable that the transmittance | permeability with respect to the ultraviolet-ray of wavelength 365nm is 5 to 75%, as for the photosensitive layer 20, it is more preferable that it is 7 to 60%, and it is especially preferable that it is 10 to 40%. If this transmittance is less than 5%, the adhesiveness tends to decrease, and if it exceeds 75%, the resolution tends to decrease. This transmittance can be measured by a UV spectrometer. As a UV spectrometer, the Hitachi Corporation make 228A type W-beam spectrophotometer etc. are mentioned.
감광층(20)은, 상술한 감광성 수지조성물의 용액을 조제하고, 이것을 지지체(10)상에 도포하여 형성하는 것이 바람직하다. 도포는, 예를 들면, 롤코터, 콤마코터, 그라비아 코터, 에어나이프 코터, 다이코터, 바코터 등의 공지의 방법으로 실시할 수 있다. 또한, 건조는, 70~150℃, 5~30분간 정도에서 실시할 수 있다.It is preferable that the photosensitive layer 20 prepares the solution of the photosensitive resin composition mentioned above, and apply | coats it on the support body 10, and is formed. Application | coating can be performed by well-known methods, such as a roll coater, a comma coater, a gravure coater, an air knife coater, a die coater, and a bar coater, for example. In addition, drying can be performed in 70-150 degreeC and about 5 to 30 minutes.
지지체(10)는, 두께가 5~25㎛인 것이 바람직하고, 8~20㎛인 것이 보다 바람직하고, 10~16㎛인 것이 특히 바람직하다. 이 두께가 5㎛ 미만이면 현상전의 지지체 박리 시에 깨지기 쉬워지는 경향이 있고, 25㎛를 초과하면 해상도가 저하하는 경향이 있다.It is preferable that the support body 10 is 5-25 micrometers in thickness, It is more preferable that it is 8-20 micrometers, It is especially preferable that it is 10-16 micrometers. When this thickness is less than 5 micrometers, it exists in the tendency to become fragile at the time of peeling a support body before image development, and when it exceeds 25 micrometers, there exists a tendency for the resolution to fall.
지지체(10)의 헤이즈는 O.OO1~5.0인 것이 바람직하고, 0.001~2.0인 것이 보다 바람직하고, 0.01~1.8인 것이 특히 바람직하다. 이 헤이즈가 2.0을 초과하면, 해상도가 저하하는 경향이 있다. 헤이즈는 JIS K 7105에 준거하여 측정한 것이며, NDH-1001DP(일본전색공업 주식회사 제조, 상품명) 등의 시판의 탁도계 등으로 측정이 가능하다.It is preferable that the haze of the support body 10 is 0.001-5.0, It is more preferable that it is 0.001-2.0, It is especially preferable that it is 0.01-1.8. When this haze exceeds 2.0, there exists a tendency for the resolution to fall. The haze is measured in accordance with JIS K 7105 and can be measured by a commercially available turbidimeter such as NDH-1001DP (manufactured by Nippon Denshoku Industries Co., Ltd., brand name).
지지체(10) 및 보호 필름(30)으로서는, 폴리에틸렌테레프탈레이트, 폴리프로필렌, 폴리에틸렌, 폴리에스테르 등의 중합체 필름이, 내열성 및 내용제성의 점에서 뛰어나기 때문에 적절하게 사용된다.As the support 10 and the protective film 30, polymer films, such as polyethylene terephthalate, polypropylene, polyethylene, and polyester, are used suitably because they are excellent in the point of heat resistance and solvent resistance.
보호 필름(30)은, 두께가 5~30㎛인 것이 바람직하고, 10~28㎛인 것이 보다 바람직하고, 15~25㎛인 것이 특히 바람직하다. 이 두께가 5㎛ 미만이면 라미네이트시에 보호 필름(30)이 깨지기 쉬워지는 경향이 있고, 30㎛를 초과하면 염가성(廉價性)이 뒤떨어지는 경향이 있다.It is preferable that the thickness of the protective film 30 is 5-30 micrometers, It is more preferable that it is 10-28 micrometers, It is especially preferable that it is 15-25 micrometers. When this thickness is less than 5 micrometers, the protective film 30 will tend to be broken at the time of lamination, and when it exceeds 30 micrometers, it will be inferior to inexpensiveness.
보호 필름(30)의 긴 방향의 인장강도는 13MPa 이상인 것이 바람직하고, 13~100MPa인 것이 보다 바람직하고, 14~1OOMPa인 것이 더욱 바람직하고, 15~100MPa인 것이 보다 한층 바람직하고, 16~100MPa인 것이 보다 한층 더 바람직하다. 이 인장강도가 13MPa 미만이면, 라미네이트시에 보호 필름(30)이 깨지기 쉬운 경향이 있다.It is preferable that the tensile strength of the long direction of the protective film 30 is 13 MPa or more, It is more preferable that it is 13-100 MPa, It is more preferable that it is 14-1OOMPa, It is still more preferable that it is 15-100 MPa, It is 16-100 MPa It is further more preferable. If this tensile strength is less than 13 MPa, there exists a tendency for the protective film 30 to be easily broken at the time of lamination.
보호 필름(30)의 폭 방향의 인장강도는 9MPa 이상인 것이 바람직하고, 9~100 MPa인 것이 보다 바람직하고, 10~100MPa인 것이 더욱 바람직하고, 11~100MPa인 것이 보다 한층 바람직하고, 12~100MPa인 것이 보다 한층 더 바람직하다. 이 인장강도가 9MPa 미만이면 라미네이트시에 보호 필름(30)이 깨지기 쉬운 경향이 있다.It is preferable that the tensile strength of the protective film 30 in the width direction is 9 MPa or more, It is more preferable that it is 9-100 MPa, It is more preferable that it is 10-100 MPa, It is still more preferable that it is 11-100 MPa, 12-100 MPa It is further more preferable that it is. If this tensile strength is less than 9 MPa, there exists a tendency for the protective film 30 to be easily broken at the time of lamination.
상기 인장강도는 JIS C 2318-1997(5. 3. 3)에 준거하여 측정할 수 있으며, 동양 볼드윈 주식회사 제조, 상품명 텐시론 등의 시판의 인장강도 시험기 등으로 측정이 가능하다.The tensile strength can be measured according to JIS C 2318-1997 (March. 3), and can be measured by a commercially available tensile strength tester manufactured by Dongyang Baldwin Co., Ltd., product name Tenshiron.
지지체(10) 및 보호 필름(30)은, 후에 감광층(20)으로부터 제거가능하지 않으면 안 되기 때문에, 제거가 불가능해지도록 표면 처리가 실시된 것이면 안되지만, 특별히 제한은 없고, 필요에 따라서 처리를 실시해도 좋다. 지지체(10) 및 보호 필름(30)은 필요에 따라서 대전방지 처리가 실시되어 있어도 좋다.Since the support body 10 and the protective film 30 must be removable from the photosensitive layer 20 later, the surface treatment should not be carried out so that removal is impossible, but there is no restriction | limiting in particular and a process is performed as needed. You may carry out. The support 10 and the protective film 30 may be subjected to an antistatic treatment as necessary.
본 발명의 감광성 엘리먼트는 상기 실시형태에 한정되지 않고, 감광층, 지지체 및 보호 필름 외에, 쿠션층, 접착층, 광흡수층, 가스베리어층 등의 중간층이나 보호층을 가지고 있어도 좋다.The photosensitive element of this invention is not limited to the said embodiment, In addition to the photosensitive layer, a support body, and a protective film, you may have intermediate layers and protective layers, such as a cushion layer, an adhesive layer, a light absorption layer, and a gas barrier layer.
감광성 엘리먼트(1)는, 예를 들면, 그대로 또는 감광층(20)의 다른 면에 보 호 필름(30)을 더욱 적층하여 원통형의 권심(券芯)에 감아 저장된다.The photosensitive element 1 is stored, for example, as it is or by further laminating the protective film 30 on the other side of the photosensitive layer 20 and wound in a cylindrical core.
다음에, 본 발명의 감광성 수지조성물을 이용한 프린트 배선판의 제조 방법의 일실시형태에 대해서 설명한다. 본 실시형태의 프린트 배선판의 제조 방법에 있어서, 회로형성 기판은 프린트 배선판에 포함되는 것이고, 회로형성용 기판 및 회로 패턴(회로 도선)을 가진다. 회로형성 기판은 스루홀(through hole) 등을 가져도 좋고, 또한, 다층 구조를 가져도 좋다.Next, one Embodiment of the manufacturing method of the printed wiring board using the photosensitive resin composition of this invention is described. In the manufacturing method of the printed wiring board of this embodiment, a circuit formation board | substrate is contained in a printed wiring board and has a circuit formation board and a circuit pattern (circuit lead). The circuit forming substrate may have a through hole or the like, and may have a multilayer structure.
본 실시형태에서는, 레지스트를 이용한다. 레지스트란, 에칭, 땜납 붙임 또는 막형성을 선택적으로 실시하기 위해, 프린트 배선판의 특정 영역을 마스크 또는 보호하는 피복재료이며, 도금 보호막으로서도 기능한다. 통상, 포토레지스트를 이용하고, 그 감광성을 이용하여, 미세하고 또한 정확한 패턴을 소정의 영역에 높은 정도로 피복형성하여, 피보호물을 보호한다. 본 발명의 프린트 배선판의 제조 방법에 있어서, 레지스트는 목적에 따라 2종류로 나누어진다.In this embodiment, a resist is used. A resist is a coating material which masks or protects a specific area | region of a printed wiring board in order to selectively perform etching, soldering, or film formation, and also functions as a plating protective film. Usually, a photoresist is used, and the photosensitive property is used to coat and form a fine and accurate pattern in a predetermined region to a high degree, thereby protecting the object to be protected. In the manufacturing method of the printed wiring board of this invention, a resist is divided into two types according to the objective.
그 한편은, 솔더 레지스트(표면 수지층)이며, 예를 들면, 땜납 붙임에 의해 접합부분을 형성하는 영역만이 노출하도록 도포, 노광하고, 소망하는 피복(보호) 패턴을 가지도록 형성한 것이다. 즉, 솔더 레지스트(표면 수지층)는, 회로 패턴을 제외한 회로형성 기판의 전면을 피복하도록 형성된다.On the other hand, it is a soldering resist (surface resin layer), for example, it is apply | coated and exposed so that only the area | region which forms a junction part by solder bonding may be exposed, and it is formed so that it may have a desired coating (protection) pattern. That is, a soldering resist (surface resin layer) is formed so that the whole surface of a circuit forming board except a circuit pattern may be covered.
또 하나는, 도금 레지스트이다. 도금 레지스트는, 감광성 엘리먼트를 사용하여 감광층을 적층하고, 노광하여 무전해 도금을 실시하는 영역만이 노출하는 것과 같은 피복(보호) 패턴을 가지도록 형성한 경화물층(레지스트 패턴)이다. 즉, 이 경화물층(레지스트 패턴)은, 실장 패드의 부분 등의 도금에 의한 금속의 부착이 바람 직하지 않은 회로형성 기판의 전면을 피복하도록 형성된다.Another is a plating resist. A plating resist is a hardened | cured material layer (resist pattern) formed so that the photosensitive layer may be laminated | stacked using the photosensitive element, and it has a coating | covering (protection) pattern such that only the area | region which exposes and performs electroless plating is exposed. That is, this hardened | cured material layer (resist pattern) is formed so that the adhesion of metal by plating, such as a part of a mounting pad, may coat | cover the whole surface of the circuit formation board which is not preferable.
이하에, 도면을 이용하여 본 실시형태를 보다 상세하게 설명한다. 도 2는 본 발명의 프린트 배선판의 제조 방법의 일실시형태를 나타내는 공정도이다. 도 2에 나타내는 실시형태에서는, 우선, 회로형성용 기판(40)상에 회로 패턴(50)이 형성된 회로형성 기판(80)과 회로형성 기판(80)상에 형성된 표면 수지층(솔더 레지스트)(60)을 가지는 제 1의 적층 기판(100)을 준비한다(도 2의(a)). 표면 수지층(60)에는, 회로 패턴(50)의 노출부(50a)가 노출하는 개구부(70)가 형성되어 있다. 그리고, 제 1의 적층 기판(100)의 표면 수지층(60)측의 면상에 감광성 엘리먼트(1)를 감광층(20)이 표면 수지층(60)으로 밀착하도록 적층한다((도 2의(b)).EMBODIMENT OF THE INVENTION Below, this embodiment is described in detail using drawing. 2 is a flowchart showing one embodiment of a method for manufacturing a printed wiring board of the present invention. In the embodiment shown in FIG. 2, first, the circuit forming substrate 80 on which the circuit pattern 50 is formed on the circuit forming substrate 40 and the surface resin layer (solder resist) formed on the circuit forming substrate 80 ( A first laminated substrate 100 having 60 is prepared (FIG. 2A). In the surface resin layer 60, an opening 70 exposed by the exposed portion 50a of the circuit pattern 50 is formed. Then, the photosensitive element 1 is laminated on the surface on the surface resin layer 60 side of the first laminated substrate 100 such that the photosensitive layer 20 is in close contact with the surface resin layer 60 (( b)).
이어서, 회로형성 기판(80)상에 적층된 감광층(20)에 대해서, 마스크 패턴(90)을 통해 활성 광선(92)을 화상상에 조사한다(도 2의(c)). 마스크 패턴(90)은 활성광선(92)을 차폐하는 차폐부(90a)와, 활성 광선(92)을 투과하는 투명부(90b)를 가지고 있다. 이것에 의해, 감광층(20)의 일부(노광부(22))를 노광하고, 감광성 수지조성물의 경화물을 형성시킨다. 노광 후, 지지체(10) 및 미노광부를 제거하여 현상하고, 패터닝된 경화물층(레지스트 패턴)(24)을 형성시킨다(도 2의(d)). 이와 같이 하여, 회로형성 기판(80)상에 표면 수지층(60) 및 경화물층(레지스트 패턴) (24)을 이 순서대로 구비한 제 2의 적층 기판(200)을 얻는다. 경화물층(레지스트 패턴)(24)은, 회로 패턴(50)의 노출부(50a)가 노출하도록, 도금 레지스트의 목적으로 형성시킨다. 이 경화물층(레지스트 패턴)(24)은, 그 후, 임의로 후경화시킬 수 있다.Subsequently, the active light rays 92 are irradiated onto the image via the mask pattern 90 with respect to the photosensitive layer 20 laminated on the circuit forming substrate 80 (FIG. 2C). The mask pattern 90 has the shielding part 90a which shields the actinic ray 92, and the transparent part 90b which permeate | transmits the actinic ray 92. As shown in FIG. Thereby, a part (exposed part 22) of the photosensitive layer 20 is exposed and the hardened | cured material of the photosensitive resin composition is formed. After exposure, the support 10 and the unexposed portion are removed and developed to form a patterned cured product layer (resist pattern) 24 (FIG. 2 (d)). In this way, the second laminated substrate 200 having the surface resin layer 60 and the cured product layer (resist pattern) 24 on the circuit-forming substrate 80 in this order is obtained. The cured product layer (resist pattern) 24 is formed for the purpose of plating resist so that the exposed portion 50a of the circuit pattern 50 is exposed. This hardened | cured material layer (resist pattern) 24 can be arbitrarily post-cured after that.
표면 수지층(60) 및 경화물층(레지스트 패턴)(24)을 마스크로 하여, 제 2의 적층 기판(200)에 대해서 Ni 무전해 도금을 실시하고, 회로 패턴(50)상에 도금층(55)을 형성한다(도 2의(e)). 이어서, 무전해 도금된 제 2의 적층 기판(200)으로부터 경화물층(24)을 제거하여 프린트 배선판(300)을 얻는다(도 2의(f)).Ni electroless plating is performed on the second laminated substrate 200 using the surface resin layer 60 and the cured product layer (resist pattern) 24 as a mask, and the plating layer 55 is formed on the circuit pattern 50. ) (FIG. 2E). Subsequently, the cured product layer 24 is removed from the second electroless plated laminated substrate 200 to obtain a printed wiring board 300 (FIG. 2 (f)).
도 3 및 도 4는, 본 발명의 프린트 배선판의 제조 방법의 다른 실시형태를 나타내는 공정도이고, 도 3은 그 제 2의 공정까지를, 도 4는 그 제3 공정을 나타내는 공정도이다. 도 3에 나타내는 제 1의 공정에서는, 우선, 회로형성용 기판(40)상에 회로 패턴(50) 및 (51)이 형성된 회로형성 기판(80)과 회로형성 기판(80)상에 형성된 표면 수지층(60)을 가지는 제 1의 적층 기판(100)을 준비한다(도 3의(a)). 표면 수지층(60)에는, 회로 패턴(50) 및 (51)의 노출부(50a) 및 (51a)가 노출하는 개구부(70)가 형성되어 있다. 그리고, 제 1의 적층 기판(100)의 표면 수지층(60)측의 면상에 감광성 엘리먼트(1)를 감광층(20)이 표면 수지층(60)과 밀착하도록 적층한다((도 3의(b)).FIG.3 and FIG.4 is process drawing which shows another embodiment of the manufacturing method of the printed wiring board of this invention, FIG. 3 is the process drawing which shows the 2nd process, and FIG. 4 shows the 3rd process. In the first process shown in FIG. 3, first, the number of surfaces formed on the circuit forming substrate 80 and the circuit forming substrate 80 on which the circuit patterns 50 and 51 are formed on the circuit forming substrate 40. The first laminated substrate 100 having the ground layer 60 is prepared (FIG. 3A). In the surface resin layer 60, an opening 70 exposed by the exposed portions 50a and 51a of the circuit patterns 50 and 51 is formed. Then, the photosensitive element 1 is laminated on the surface of the first laminated substrate 100 on the surface resin layer 60 side so that the photosensitive layer 20 is in close contact with the surface resin layer 60 (Fig. 3 ( b)).
제 2의 공정에서는, 회로형성 기판(80)상에 적층된 감광층(20)에 대하여, 마스크 패턴(90)을 통해 활성 광선(92)을 화상상에 조사한다(도 3의(c)). 마스크 패턴(90)은 활성 광선(92)을 차폐하는 차폐부(90a)와, 활성 광선(92)을 투과하는 투명부(90b)를 가지고 있다. 이것에 의해, 감광층(20)의 일부(노광부(22))를 노광하여, 감광성 수지조성물의 경화물을 형성시킨다. 노광 후, 지지체(10) 및 미노광부를 제거하여 현상하고, 패터닝된 경화물층(레지스트 패턴)(24)을 형성시킨다(도 3의(d)). 이와 같이 하여, 회로형성 기판(80)상에 표면 수지층(60) 및 경화물층(레 지스트 패턴)(24)을 이 순서대로 구비한 제 2의 적층 기판(200)을 얻는다. 경화물층(레지스트 패턴)(24)은, 무전해 도금을 실시하는 회로 패턴(50)만을 노출하고, 도금에 의한 금속의 부착이 바람직하지 않은 회로 패턴(51) 등의 영역을 피복 하는 도금 레지스트로서 기능한다. 이 경화물층(레지스트 패턴)(24)은, 그 후 임의적으로 후경화 시킬 수 있다.In the second step, the active light rays 92 are irradiated onto the image via the mask pattern 90 with respect to the photosensitive layer 20 laminated on the circuit forming substrate 80 (FIG. 3C). . The mask pattern 90 has a shielding portion 90a that shields the active light ray 92 and a transparent portion 90b that transmits the active light ray 92. Thereby, a part (exposure part 22) of the photosensitive layer 20 is exposed, and the hardened | cured material of the photosensitive resin composition is formed. After exposure, the support 10 and the unexposed portion are removed and developed to form a patterned cured product layer (resist pattern) 24 (FIG. 3 (d)). In this way, the second laminated substrate 200 having the surface resin layer 60 and the cured product layer (resist pattern) 24 on the circuit forming substrate 80 in this order is obtained. The cured product layer (resist pattern) 24 exposes only the circuit pattern 50 for performing electroless plating, and the plating resist covers an area such as a circuit pattern 51 for which metal adhesion by plating is not preferable. Function as. This hardened | cured material layer (resist pattern) 24 can be arbitrarily post-cured after that.
도 4에 나타내는 제 3의 공정에서는, 표면 수지층(60)및 경화물층(레지스트 패턴)(24)을 마스크로 하여, 제 2의 적층 기판(200)에 대해서 Ni 무전해 도금을 실시하고, 마스크되지 않은 회로 패턴(50)의 표면에 Ni도금층(55a)을 형성한다(도 4의 (e)). 계속하여, 치환 Au도금을 실시하고, Ni도금층상에 Au도금층(55b)을 형성한다(도 4의(f)). 이와 같이 하여, 필요한 부분에만 금속 도금 가공처리를 실시하고, 경화물층(레지스트 패턴)(24)를 박리하여, 실장부품의 신뢰성이 뛰어난 프린트 배선판(300)(도 4의 (g))을 얻는다.In the 3rd process shown in FIG. 4, Ni electroless plating is performed with respect to the 2nd laminated board 200 using the surface resin layer 60 and the hardened | cured material layer (resist pattern) 24 as a mask, The Ni plating layer 55a is formed on the surface of the unmasked circuit pattern 50 (FIG. 4E). Subsequently, substituted Au plating is performed to form an Au plating layer 55b on the Ni plating layer (Fig. 4 (f)). In this way, the metal plating process is performed only on the necessary portions, and the cured product layer (resist pattern) 24 is peeled off to obtain a printed wiring board 300 (FIG. 4G) which is excellent in reliability of the mounting component. .
도 2 및 도 3에 나타내는 제 1의 적층 기판(100)은, 예를 들면, 회로형성용 기판(40)상에 감광성 엘리먼트(1)를 그 감광층(20)이 회로형성용 기판(40)과 밀착하도록 하여 적층하고, 활성 광선을 화상상에 조사하고 나서 현상하는 방법에 의해, 패터닝된 표면 수지층(60)을 형성시키는 공정과, 표면 수지층(60)을 마스크로하여 에칭 또는 도금하여 회로 패턴(50)을 형성하는 공정을 경유하여 제작된다.As for the 1st laminated board | substrate 100 shown to FIG. 2 and FIG. 3, the photosensitive element 1 is carried out on the circuit formation board | substrate 40, and the photosensitive layer 20 is the circuit formation board | substrate 40, for example. And forming a patterned surface resin layer 60 by etching and plating the active light onto an image, and etching or plating the surface resin layer 60 as a mask. It is produced via the process of forming the circuit pattern 50.
상기 제 1의 공정에 있어서는, 보호 필름(30)을 제거 후, 감광층(20)을 가열하면서 표면 수지층(60)상에 압착함으로써 감광성 엘리먼트(1)가 적층된다. 이 때, 밀착성 및 추종성의 견지로부터 감압하에서 적층하는 것이 바람직하다. 보다 구체 적으로는 적층시, 감광층(20)을 70~130℃에서 가열하는 것이 바람직하고, 압착 압력은 0.1~1.OMPa 정도(1~10kgf/cm2 정도)로 하는 것이 바람직하다. 감광층(20)을 이와 같이 70~130℃에서 가열하면, 미리 회로형성 기판을 예열처리하는 것은 필요하지 않지만, 적층성을 더 향상시키기 위해서, 회로형성 기판의 예열 처리를 실시해도 좋다.In the said 1st process, after removing the protective film 30, the photosensitive element 1 is laminated | stacked by pressing on the surface resin layer 60, heating the photosensitive layer 20. FIG. At this time, it is preferable to laminate | stack under reduced pressure from the standpoint of adhesiveness and followability. More specifically, during the lamination, it is preferable to heat the photosensitive layer 20 at 70 to 130 ° C., and the pressing pressure is preferably about 0.1 to 1.OMPa (about 1 to 10 kgf / cm 2 ). When the photosensitive layer 20 is heated at 70 to 130 ° C in this manner, it is not necessary to preheat the circuit forming substrate in advance, but in order to further improve the lamination property, the circuit forming substrate may be preheated.
활성 광선(92)의 광원으로서는, 공지의 광원, 예를 들면, 카본 아크등, 수은증기 아크등, 고압 수은등, 크세논램프 등의 자외선, 가시광선 등을 유효하게 방사하는 것이 사용된다. 마스크 패턴(90)은 아트워크(art work)로 불리는 네가티브 또는 포지티브 마스크 패턴이다.As the light source of the active light 92, a known light source such as a carbon arc lamp, a mercury vapor arc lamp, a high pressure mercury lamp, a xenon lamp or the like that effectively radiates ultraviolet rays, visible light, or the like is used. The mask pattern 90 is a negative or positive mask pattern called art work.
노광 후의 현상은, 알카리성 수용액, 수계 현상액, 유기용제 등의 감광성 수지조성물에 대응한 현상액에 의한 웨트 현상, 드라이 현상 등으로 미노광부를 제거 하여 실시한다. 현상 방식에는, 딥(dip) 방식, 배틀(battle) 방식, 스프레이(spray) 방식, 브러싱(brushing), 슬랩핑(slapping) 등이 있고, 고압 스프레이 방식이 해상도 향상을 위해서는 가장 적합하다.The development after exposure is performed by removing the unexposed portion by wet development, dry development, or the like by a developing solution corresponding to a photosensitive resin composition such as an alkaline aqueous solution, an aqueous developer, and an organic solvent. The developing method includes a dip method, a battle method, a spray method, a brushing, a slapping, and the like, and a high pressure spray method is most suitable for improving the resolution.
현상액으로서는, 안전하고 동시에 안정하고, 조작성이 양호한 점에서, 알카리성 수용액 등이 바람직하게 사용된다. 알카리성 수용액의 염기로서는, 예를 들면, 리튬, 나트륨 또는 칼륨의 수산화물 등의 수산화 알칼리, 리튬, 나트륨, 칼륨 혹은 암모늄의 탄산염 또는 중탄산염 등의 탄산 알칼리, 인산칼륨, 인산나트륨 등의 알칼리 금속 인산염, 피로인산나트륨, 피로인산칼륨 등의 알칼리 금속 피로인산 염 등이 사용된다. 현상의 방식에는, 딥 방식, 배틀 방식, 스프레이 방식, 브러싱, 슬랩핑 등이 있고, 고압 스프레이 방식이 해상도 향상을 위해서는 가장 적합하다.As the developing solution, an alkaline aqueous solution or the like is preferably used because it is safe and stable and has good operability. Examples of the base of the alkaline aqueous solution include alkali hydroxides such as hydroxides of lithium, sodium or potassium, alkali carbonates such as carbonates or bicarbonates of lithium, sodium, potassium or ammonium, alkali metal phosphates such as potassium phosphate and sodium phosphate, and fatigue. Alkali metal pyrophosphates, such as sodium phosphate and potassium pyrophosphate, etc. are used. The development method includes a dip method, a battle method, a spray method, brushing, and slapping, and a high pressure spray method is most suitable for improving resolution.
알카리성 수용액은, 보다 구체적으로는, 0.1~5중량% 탄산나트륨의 희박 용액, 0.1~5중량% 탄산칼륨의 희박 용액, 0.1~5중량% 수산화나트륨의 희박 용액, 0.1~5중량% 사붕산나트륨의 희박 용액 등이 바람직하다. 또한, 알카리성 수용액의 pH는 9~11의 범위로 하는 것이 바람직하고, 그 온도는 감광층의 현상성에 맞추어 조정한다.The alkaline aqueous solution is more specifically, a lean solution of 0.1-5% by weight of sodium carbonate, a lean solution of 0.1-5% by weight of potassium carbonate, a lean solution of 0.1-5% by weight of sodium hydroxide, and 0.1-5% by weight of sodium tetraborate. Lean solutions and the like are preferred. Moreover, it is preferable to make pH of alkaline aqueous solution into the range of 9-11, and the temperature is adjusted according to the developability of the photosensitive layer.
알카리성 수용액 중에서는, 표면 활성제, 소포제, 현상을 촉진시키기 위한 소량의 유기용제 등을 혼합시켜도 좋다. 이 경우에 사용되는 알칼리 물질로서는, 상기 물질 이외에, 붕사나 메타규산나트륨, 수산화테트라메틸암모늄, 에탄올아민, 에틸렌디아민, 디에틸렌트리아민, 2-아미노-2-히드록시메틸-1,3-프로판디올, 1,3-디아미노프로판올-2, 몰포린 등을 들 수 있다. 현상액의 pH는, 레지스트의 현상을 충분히 할 수 있는 범위에서 가능한 한 작게 하는 것이 바람직하고, pH8~12로 하는 것이 바람직하고, pH9~10으로 하는 것이 보다 바람직하다.In alkaline aqueous solution, you may mix surface active agent, an antifoamer, a small amount of organic solvents for promoting image development, etc. Alkali substances used in this case include borax, sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1,3-propane in addition to the above substances. Diol, 1,3-diaminopropanol-2, morpholine and the like. It is preferable to make pH of a developing solution as small as possible in the range which can fully develop a resist, It is preferable to set it as pH8-12, and it is more preferable to set it as pH9-10.
상기 유기용제로서는, 예를 들면, 삼아세톤 알코올, 아세톤, 아세트산에틸, 탄소수 1~4인 알콕시기를 가지는 알콕시에탄올, 에틸알코올, 이소프로필알코올, 부틸알코올, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노부틸에테르를 들 수 있다. 이들은, 단독으로 또는 2종류 이상을 조합시켜서 사용된다. 유기용제의 농도는, 통상, 2~90중량%로 하는 것이 바람직하고, 그 온도는, 현상성에 맞추어 조정할 수 있다. 또한, 유기용제가 혼입된 수계 현상 액 중에는, 계면활성제, 소포제 등을 소량 첨가할 수도 있다.As said organic solvent, for example, acetone alcohol, acetone, ethyl acetate, alkoxy ethanol having an alkoxy group having 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol mono Ethyl ether and diethylene glycol monobutyl ether are mentioned. These are used individually or in combination of 2 or more types. It is preferable to make the density | concentration of the organic solvent into 2 to 90 weight% normally, and the temperature can be adjusted according to developability. Moreover, a small amount of surfactant, an antifoamer, etc. can also be added to the aqueous developing solution in which the organic solvent was mixed.
단독으로 사용하는 유기용제계 현상액으로서는, 예를 들면, 1,1,1-트리클로로에탄, N-메틸피롤리돈, N,N-디메틸포름아미드, 시클로헥사논, 메틸이소부틸케톤, γ-부티로락톤을 들 수 있다. 이들 유기용제는, 인화 방지를 위해, 1~20중량%의 범위에서 물을 첨가하는 것이 바람직하다. 또한, 필요에 따라서 2종 이상의 현상 방법을 병용해도 좋다.As the organic solvent developer used alone, for example, 1,1,1-trichloroethane, N-methylpyrrolidone, N, N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, γ- Butyrolactone is mentioned. It is preferable to add water in these organic solvents in the range of 1-20 weight% in order to prevent flammability. Moreover, you may use together 2 or more types of developing methods as needed.
현상 후의 처리로서, 필요에 따라서 60~250℃ 정도의 가열 또는 O.2~10mJ/cm2 정도의 노광을 실시함으로써 경화물층(레지스트 패턴)을 더욱 경화해도 좋다.As a process after image development, you may further harden a hardened | cured material layer (resist pattern) by performing the heating of about 60-250 degreeC, or exposure of about 0.2-10mJ / cm <2> as needed.
무전해 도금으로서는, 무전해 Ni도금을 들 수 있다. 무전해 Ni도금 상에, 금,은, 팔라디늄, 백금, 로듐, 구리, 주석 등의 금속 도금을 실시해도 좋다.As electroless plating, electroless Ni plating is mentioned. Metal plating, such as gold, silver, palladium, platinum, rhodium, copper, and tin, may be performed on electroless Ni plating.
무전해 도금 후의 경화물층(레지스트 패턴)의 제거는, 예를 들면, 현상에 이용한 알카리성 수용액보다 더욱 강알칼리성의 수용액으로 박리함으로써 실시할 수 있다. 강알칼리성의 수용액으로서는, 예를 들면, 1~10중량% 수산화나트륨 수용액, 1~10중량% 수산화칼륨 수용액 등이 사용된다. 박리 방식으로서는, 침지 방식, 스프레이 방식 등을 들 수 있다.Removal of the cured product layer (resist pattern) after electroless plating can be performed, for example, by peeling with a strongly alkaline aqueous solution than the alkaline aqueous solution used for development. As a strongly alkaline aqueous solution, 1-10 weight% sodium hydroxide aqueous solution, 1-10 weight% potassium hydroxide aqueous solution, etc. are used, for example. As a peeling system, an immersion system, a spray system, etc. are mentioned.
이하, 실시예를 들고 본 발명에 대해 보다 구체적으로 설명한다. 다만, 본 발명은 이들 실시예로 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples. However, the present invention is not limited to these examples.
실시예Example 1~8 및 1-8 and 비교예Comparative example 1~4 1 ~ 4
(바인더 (bookbinder 폴리머Polymer 1의 합성) 1, compound)
메타크릴산, 메타크릴산메틸 및 스티렌을 중량비 28: 60: 12의 비율로 공중합시키고, 중량 평균 분자량 60000, 유리전이온도 124℃, 산가 68mgKOH/g의 공중합체(바인더 폴리머 1)를 얻었다. 상기 바인더 폴리머 1을, 메틸셀로솔브/톨루엔(6: 4, 중량비)로 비휘발 성분(고형분) 50중량%가 되도록 용해시키고, 바인더 폴리머 1의 용액을 얻었다.Methacrylic acid, methyl methacrylate, and styrene were copolymerized in the ratio of the weight ratio 28:60:12, and the copolymer (binder polymer 1) of the weight average molecular weight 60000, glass transition temperature of 124 degreeC, and acid value 68 mgKOH / g was obtained. The binder polymer 1 was dissolved in methyl cellosolve / toluene (6: 4, weight ratio) so as to be 50% by weight of a nonvolatile component (solid content) to obtain a solution of the binder polymer 1.
(바인더 (bookbinder 폴리머Polymer 2의 합성) 2, composite)
공중합 단량체로서 메타크릴산 130g, 메타크릴산메틸 170g, 아크릴산에틸 100g 및 스티렌 100g과, 아조비스이소부티로니트릴 3.Og를 혼합하고, 용액 α를 조제했다. 교반기, 환류 냉각기, 습도계, 적하 로트 및 질소 가스 도입관을 갖춘 플라스크에, 중량비 3:2인 메틸셀로솔브 및 톨루엔의 배합물 500g을 가하고, 질소 가스를 취입하면서 교반하여, 85℃까지 가열하였다. 거기에, 용액 α를 4시간 걸쳐 적하한 후, 85℃에서 교반하면서 2시간 보온했다.As a copolymerization monomer, 130 g of methacrylic acid, 170 g of methyl methacrylate, 100 g of ethyl acrylate, and 100 g of styrene and 3.Og of azobisisobutyronitrile were mixed to prepare a solution α. To a flask equipped with a stirrer, a reflux condenser, a hygrometer, a dropping lot, and a nitrogen gas inlet tube, 500 g of a mixture of methyl cellosolve and toluene in a weight ratio of 3: 2 was added, stirred while blowing nitrogen gas, and heated to 85 ° C. The solution (alpha) was dripped there over 4 hours, and it kept warm for 2 hours, stirring at 85 degreeC.
또한, 중량비 3:2인 메틸셀로솔브 및 톨루엔의 배합물 150g에 아조비스이소부티로니트릴 O.5g를 용해시킨 용액을, 10분에 걸쳐 플라스크 내에 적하했다. 적하 후의 용액을 교반하면서 85℃에서 5시간 보온한 후, 냉각하여 바인더 폴리머 2의 용액을 얻었다. 바인더 폴리머 2의 용액의 비휘발 성분(고형분)은 50.0중량%이며, 바인더 폴리머 2의 중량 평균 분자량은 100000이었다.In addition, a solution in which 0.5 g of azobisisobutyronitrile was dissolved in 150 g of a compound containing methyl cellosolve and toluene having a weight ratio of 3: 2 was added dropwise into the flask over 10 minutes. The solution after dropping was kept at 85 ° C for 5 hours with stirring, followed by cooling to obtain a solution of Binder Polymer 2. The nonvolatile component (solid content) of the solution of the binder polymer 2 was 50.0 wt%, and the weight average molecular weight of the binder polymer 2 was 100000.
또한, 중량 평균 분자량은, 겔퍼미에이션 크로마토그래피(GPC) 법에 따라 측 정하고, 표준 폴리스티렌의 검량선을 이용하여 환산함으로써 도출했다. GPC의 측정 조건은, 이하에 나타낸다.In addition, the weight average molecular weight was derived by measuring by gel permeation chromatography (GPC) method and converting using the analytical curve of standard polystyrene. The measurement conditions of GPC are shown below.
(( GPCGPC 측정 조건) Measuring conditions)
·펌프: 히다치 L-6000형[(주) 히다치 제작 소제]Pump: Hitachi L-6000 type (manufactured by Hitachi Co., Ltd.)
·칼럼: GelpackGL-R420+GelpackGL-R430+GelpackGL-R440(합계 3개)(이상, 히다치 화성공업(주) 제조, 상품명)Column: GelpackGL-R420 + GelpackGL-R430 + GelpackGL-R440 (3 in total) (above, manufactured by Hitachi Chemicals, Ltd., trade name)
·용리액: 테트로히드로푸란Eluent: Tetrohydrofuran
·측정 온도: 실온Measurement temperature: room temperature
·유량: 2.05mL/분Flow rate: 2.05 mL / min
·검출기: 히다치 L-3300형 RI[(주) 히다치 제작소 제조]Detector: Hitachi L-3300 RI (manufactured by Hitachi, Ltd.)
표 1 및 표 2는, (A)성분, (B)성분, (C)성분 및 그 외의 첨가 성분의 혼합비를 나타내는 것이다. 표 1 및 표 2에 나타낸 바와 같이, (A)성분 및 그 외의 첨가제 성분을 혼합하고, 이 혼합물에 (B)성분 및 (C)성분을 용해시켜, 감광성 수지조성물의 용액을 얻었다.Table 1 and Table 2 show the mixing ratio of the component (A), the component (B), the component (C) and other additive components. As shown in Table 1 and Table 2, (A) component and the other additive component were mixed, (B) component and (C) component were melt | dissolved in this mixture, and the solution of the photosensitive resin composition was obtained.
[표 1]TABLE 1
[표 2]TABLE 2
1: 고형분으로서의 중량1: weight as solid content
2: 비스페놀A 폴리옥시에틸렌디메타크릴레이트: 신나카무라화학공업(주) 제조 상품명(일반식(1)의 화합물에 있어서, R1이 메틸기, X1 및 X2가 에틸렌기, p+q의 평균값이 약 10)2: bisphenol A polyoxyethylene dimethacrylate: Shin Nakamura Chemical Co., trade name (in the compound represented by the general formula (1), R 1 is a methyl group, X 1 and X 2 is the average value of the ethylene group, p + q is About 10)
3: 비스페놀A 폴리옥시에틸렌디메타크릴레이트: 신나카무라화학공업(주) 제조 상품명(일반식(1)의 화합물에 있어서, R1이 메틸기, X1 및 X2가 에틸렌기, p+q의 평균값이 약 30)3: bisphenol A polyoxyethylene dimethacrylate: Shin Nakamura Chemical Co., trade name (in the compound represented by the general formula (1), R 1 is a methyl group, X 1 and X 2 is the average value of the ethylene group, p + q is About 30)
4: 에톡시화트리메티롤프로판트리아크릴레이트: 일본 화약(주) 제품명(일반 식(2)의 화합물에 있어서, R3, R4 및 R5가 수소원자, X3, X4 및 X5가 에틸렌기, k+m+n의 평균값이 약 9)4: Ethoxylated trimethylolpropane triacrylate: Nippon Kayaku Co., Ltd. product name (In the compound of General formula (2), R <3> , R <4> and R <5> is a hydrogen atom, X <3> , X <4> and X <5> Ethylene group, average value of k + m + n is about 9
5: 노닐페닐폴리에틸렌글리콜아크릴레이트: 동아합성(주) 제품명(일반식(3)의 화합물에 있어서, R6이 수소원자, X6이 에틸렌기, r의 평균값이 약 4)5: nonyl phenyl polyethylene glycol acrylate: Toagosei Co., Ltd. Product name (in the compound represented by the general formula (3), R 6 is a hydrogen atom, X 6 is an ethylene group, the average value of r of about 4)
6: 노닐페닐폴리에틸렌글리콜아크릴레이트: 신나카무라화학(주) 제품명(일반식(3)의 화합물에 있어서, R6이 수소원자, X6이 에틸렌기, r의 평균값이 약 8)6: nonylphenyl polyethyleneglycol acrylate: Shin-Nakamura Chemical Co., Ltd. product name (In the compound of General formula (3), R <6> is a hydrogen atom, X <6> is an ethylene group, and the average value of r is about 8.)
7: 폴리프로필렌글리콜디아크릴레이트: 신나카무라화학(주) 제품명: 신나카무라화학(주) 제품명7: Polypropylene glycol diacrylate: Shin-Nakamura Chemical Co., Ltd. Product name: Shin-Nakamura Chemical Co., Ltd.
8: 트리메티롤프로판트리아크릴레이트: 신나카무라화학(주) 제품명8: trimethylolpropane triacrylate: Shinnakamura Chemical Co., Ltd.
(감광성 (Photosensitive 엘리먼트의Element 제작) making)
실시예 1~8 및 비교예 1~4의 감광성 수지조성물의 용액을 16㎛ 두께의 폴리에틸렌테레프탈레이트 필름(베이스: 1.7%, 상품명 GS-16, 테이진(주)제조)상에 균일하게 도포하고, 100℃의 열풍 대류식 건조기로 10분간 건조한 후, 폴리에틸렌제 보호 필름으로 보호하여 감광성 엘리먼트를 얻었다. 감광층의 건조 후의 두께는, 50㎛였다.The solutions of the photosensitive resin compositions of Examples 1 to 8 and Comparative Examples 1 to 4 were evenly applied onto a polyethylene terephthalate film (base: 1.7%, trade name GS-16, manufactured by Teijin Co., Ltd.) having a thickness of 16 µm. After drying for 10 minutes with the hot air convection type dryer of 100 degreeC, it protected by the polyethylene protective film and obtained the photosensitive element. The thickness after drying of the photosensitive layer was 50 micrometers.
(회로형성 기판의 제작)(Production of circuit forming substrate)
세로 12.5cm 가로 20cm 두께 1.6㎜의 양면 구리박 에폭시 적층판(히다치 화성공업(주) 제조, 상품명: MCL-E-61)의 단면의 구리박 표면에, 주위부 1cm를 남기고, 소정의 패턴을 가지는 에칭 레지스트를 형성했다. 에칭 레지스트로 덮이지 않 은 부분의 구리박을 에칭 제거하고, 금속 단자(패드)나 배선을 가지는 회로 패턴을 형성 했다. 나머지의 에칭 레지스트를 박리하여, 회로형성 기판을 얻었다. 이면은 전면 에칭하고, 유리 에폭시 표면이 노출한 상태로 했다.12.5cm, 20cm in width and 1.6mm thick double-sided copper foil epoxy laminated board (Hitachi Chemical Co., Ltd. make, brand name: MCL-E-61) leaving a 1 cm periphery on the copper foil surface of the cross section, and has a predetermined pattern An etching resist was formed. The copper foil of the part which is not covered by the etching resist was etched away, and the circuit pattern which has a metal terminal (pad) and wiring was formed. The remaining etching resist was peeled off to obtain a circuit forming substrate. The back surface was etched all over, leaving the glass epoxy surface exposed.
(표면 수지층의 형성)(Formation of Surface Resin Layer)
얻어진 회로형성 기판의 회로 면에, 포토레지스트(타이요잉크제조(주) 제조, 상품명: PSR-4000)를 주위부 1cm를 남기고 전면에 도포하고, 80℃에서 30분간 건조했다. 그 후, 포토툴을 개입시켜, 노광기((주) 오크제작소 제조, 상품명: HMW-590)를 이용하여, 도금하는 실장 패드부를 제외한 전면을 노광했다. 미노광 부분을 1중량% 탄산나트륨 수용액(30℃)에서 60초간 스프레이 현상하고, 패드부상의 포토레지스트를 제거하여, 패턴을 형성하고, 그 후, 150℃에서 1시간 가열함으로써 열경화시키고, 회로형성 기판상에 표면 수지층(솔더 레지스트)을 형성했다.On the circuit surface of the obtained circuit formation board | substrate, the photoresist (Taiyo Ink Co., Ltd. make, brand name: PSR-4000) was apply | coated to the whole surface leaving 1 cm of circumferences, and it dried at 80 degreeC for 30 minutes. Then, the whole surface except the mounting pad part to plate | plate was exposed using the exposure machine (The Oak Corporation make, brand name: HMW-590) through a phototool. The unexposed portion was spray-developed for 60 seconds in a 1% by weight aqueous sodium carbonate solution (30 ° C), the photoresist on the pad portion was removed, a pattern was formed, and then thermally cured by heating at 150 ° C for 1 hour to form a circuit. The surface resin layer (solder resist) was formed on the board | substrate.
(( 경화물층(레지스트 패턴)의Of the cured product layer (resist pattern) 형성) formation)
표면 수지층을 구비한 회로형성 기판의 양면에, 실시예 1~8 및 비교예 1~4에서 얻어진 감광성 엘리먼트의 감광층(감광성수지조성물층)을 압력 O.4MPa, 온도 110℃, 라미네이트 속도 1.5m/분으로 라미네이트 하여, 적층했다. 적층된 감광층 중, 무전해 도금 가공을 실시하는 회로 패턴을 제외하고 전면을 노광하고, 1중량% 탄산나트륨 수용액(30℃)에서 80초간 스프레이 현상하여 경화물층(레지스트 패턴)을 형성했다. The photosensitive layer (photosensitive resin composition layer) of the photosensitive element obtained in Examples 1-8 and Comparative Examples 1-4 was put on both surfaces of the circuit formation board | substrate with a surface resin layer at a pressure of 0.4 Mpa, the temperature of 110 degreeC, and the lamination rate 1.5. It laminated by m / min and laminated | stacked. The whole surface was exposed except the circuit pattern which performs an electroless-plating process among the laminated photosensitive layers, it spray-developed for 80 second in 1weight% sodium carbonate aqueous solution (30 degreeC), and the hardened | cured material layer (resist pattern) was formed.
이상에 의해 얻어진 감광성 엘리먼트 및 적층 기판에 대해서, 이하의 방법에 의해 특성 평가를 실시했다. 표 3 및 표 4는, 그 평가 결과를 나타내는 것이다.About the photosensitive element obtained by the above, and a laminated board | substrate, the characteristic evaluation was performed by the following method. Table 3 and Table 4 show the evaluation result.
(( 내도금성Plating resistance ))
실시예 1~8 및 비교예 1~4에서 얻어진 적층 기판을, Pro Select SF(아트테크 재팬(주) 제조, 상품명)에, 50℃에서 5분간 침지하고, 탈지 처리를 실시했다. 실온에서 1분간 유수로 세정 후, Micro Etch SF(아트테크 재팬(주) 제조, 상품명)에 30℃에서 1분간 침지하고, 소프트 에칭 처리를 실시했다. 실온에서 1분간 유수로 세정 후, 5% 황산용액에 실온에서 1분간 침지하고, 산 세척처리를 실시했다.The laminated board | substrate obtained by Examples 1-8 and Comparative Examples 1-4 was immersed in Pro Select SF (Art-Tech Japan Co., Ltd. product, brand name) for 5 minutes at 50 degreeC, and the degreasing process was performed. After washing with running water for 1 minute at room temperature, it was immersed in Micro Etch SF (Art-Tech Japan Co., Ltd. make, brand name) for 1 minute at 30 degreeC, and the soft etching process was performed. After washing with running water for 1 minute at room temperature, the solution was immersed in 5% sulfuric acid solution for 1 minute at room temperature and subjected to an acid washing treatment.
그 후, 적층 기판을, 무전해 도금용 촉매 용액 오로테크 1000(아트테크 재팬(주) 제조, 상품명)에 실온에서 90초간 침지하고, 활성화시켰다. 실온에서 2분간 유수로 세정 후, Ni-P도금액인 오로테크 HP(아트테크 재팬(주) 제조, 상품명)에, 83℃에서, 40분간 침지하고, 무전해 Ni도금을 실시했다.Then, the laminated board | substrate was immersed in the catalyst solution Orotech 1000 (Art-Tech Japan Co., Ltd. make, brand name) for electroless plating at room temperature for 90 second, and was activated. After washing with running water for 2 minutes at room temperature, it was immersed for 40 minutes at 83 ° C. in Orotech HP (Arttech Japan Co., Ltd. product) which was a Ni-P plating solution, and electroless Ni plating was performed.
실온에서 2분간 유수로 세정 후, 오로테크 CS4000(아트테크(주) 제조, 오로테크 CS4000: 150mL/L, 시안화금 칼륨: 1.47g/L, 오로테크 SF: 1mL/L)에, 85℃에서 10분간 침지하고, 치환형 무전해 Au도금을 실시했다. 후처리로서, 수세하고, 85℃에서 15분간 건조했다.After rinsing with running water for 2 minutes at room temperature, to Orotech CS4000 (made by Arttech Co., Ltd., Orotech CS4000: 150 mL / L, gold potassium cyanide: 1.47 g / L, Orotech SF: 1 mL / L), at 85 ° C It was immersed for 10 minutes and substituted electroless Au plating was performed. As a post-treatment, it washed with water and dried at 85 degreeC for 15 minutes.
이렇게 하여 도금층이 형성된 적층 기판에 있어서, 육안으로 경화물층(레지스트 패턴)의 파괴 및 부풀음의 유무(특히, 패드부 주위)를, 이하에 나타내는 기준에 의해 판정하고, 내도금성을 평가했다. 평가 결과를 표 3 및 표 4에 나타낸다. 또한, 도금성의 평가는 파괴 및 부풀음이 없는 것이 양호한 것임을 의미한다.In this way, in the laminated substrate in which the plating layer was formed, the presence or absence (in particular, the pad part periphery) of the hardened | cured material layer (resist pattern) was visually determined by the criteria shown below, and plating resistance was evaluated. The evaluation results are shown in Table 3 and Table 4. In addition, evaluation of plating property means that it is good that there is no breakage and swelling.
판정 기준Criteria
A: 전면 파괴 및 부풀음 없음 B: 일부 파괴 및 부풀음 있음 C: 전면 파괴 및 부풀음 있음A: No front break and swell B: Some break and swell C: Front break and swell
(( 박리성Peelability ))
세로 4cm 가로 5cm 두께 1.6mm의 양면 구리박 에폭시 적층판(히다치 화성공업(주) 제조, 상품명: MCL-E-61)의 한 면에, 포토레지스트(타이요 잉크제조(주) 제조 PSR-4000)를 전면 도포하고, 80℃에서 30분간 건조했다.Photoresist (TAIYO Ink Manufacturing Co., Ltd. product PSR-4000) was put on one side of double-sided copper foil epoxy laminated board (Hitachi Chemical Co., Ltd. make, brand name: MCL-E-61) of 4cm in width 5cm in thickness. The whole surface was apply | coated and dried for 30 minutes at 80 degreeC.
상기 포토 레지스트를 도포한 적층판에 대하여, 도 5에 나타내는 격자상 포토툴(마스크 패턴)(90)을 개입시켜 전면 노광을 실시했다. 격자상 포토툴(마스크 패턴)(90)은 활성 광선을 차폐하는 복수의 차폐부(90a)와, 활성광선을 투과하는 투명부(90b)를 가지고 있다. 차폐부(90a)는, 가로(도 5의 A)가 2.6㎜, 세로(도 5의 B)가 0.8㎜이며, 0.45mm의 간격(도 5의 C)을 두어 줄지어 있다. 노광에는 노광기((주) 오크 제작소 제조, 상품명: HMW-590)를 이용했다.About the laminated board which apply | coated the said photoresist, whole surface exposure was performed through the grid | lattice-shaped phototool (mask pattern) 90 shown in FIG. The grid-shaped phototool (mask pattern) 90 has a plurality of shielding portions 90a for shielding actinic rays and a transparent portion 90b for transmitting actinic rays. The shielding portion 90a has a width of 2.6 mm and a length (B of FIG. 5) of 0.8 mm, and a line of 0.45 mm spacing (C of FIG. 5). The exposure machine (The Oak Corporation make, brand name: HMW-590) was used for exposure.
노광 후, 미노광 부분을 1중량% 탄산나트륨 수용액(30℃)에서 60초간 스프레이 현상했다. 이어서, 150℃에서 1시간 가열하고 열경화시켜, 상기 적층판상에 표면 수지층(솔더 레지스트)을 형성했다. 이 표면 수지층에는, 상기 적층판의 일부의 구리가 노출하는 개구부가 형성되어 있다.After exposure, the unexposed part was spray-developed for 60 second in 1weight% sodium carbonate aqueous solution (30 degreeC). Subsequently, it heated at 150 degreeC for 1 hour and thermosetted, and formed the surface resin layer (solder resist) on the said laminated board. In this surface resin layer, the opening part which copper of one part of the said laminated board exposes is formed.
상기 표면 수지층을 구비한 적층판의 양면에, 실시예 1~8 및 비교예 1~4의 감광성 엘리먼트의 감광층을, 압력 0.4MPa, 온도 110℃, 라미네이트 속도 1.5m/분의 조건으로 라미네이트 하여, 적층했다. 적층된 감광층에 대해서, 스톱퍼 21단 스텝 타블렛에 있어서의 현상 후의 잔존 스텝 단수가 8.0이 되는 에너지 노광량으로 전면 노광을 실시하여, 경화물층을 형성했다. 이렇게, 상기 표면 수지층을 구비한 적층판의 상하 양면을 경화물층이 덮는 평가용 적층판을 얻었다.The photosensitive layers of the photosensitive elements of Examples 1-8 and Comparative Examples 1-4 were laminated on both surfaces of the laminated board provided with the said surface resin layer on conditions of the pressure of 0.4 MPa, the temperature of 110 degreeC, and the lamination rate of 1.5 m / min. , Laminated. About the laminated photosensitive layer, the whole surface exposure was performed by the energy exposure amount which becomes 8.0 of the remaining step number after image development in the stopper 21-stage step tablet, and the hardened | cured material layer was formed. Thus, the laminated board for evaluation in which the hardened | cured material layer covered the upper and lower surfaces of the laminated board provided with the said surface resin layer was obtained.
이 평가용 적층판에 대하여, 1중량% 탄산나트륨 수용액(30℃)으로 80초간 스프레이하고, 상기 내도금성 평가와 같은 방법으로 도금 처리를 실시했다. 그 후, 50℃에서 가온한 3중량% 수산화나트륨 수용액에 침지하고, 경화물층이 상기 표면 수지층을 구비한 적층판으로부터 박리할 때까지의 시간을 측정함으로써, 박리성을 평가했다. 평가 결과를 표 3 및 표 4에 나타낸다. 박리성의 평가는, 시간이 짧을수록 양호한 것을 의미한다.About this laminated board for evaluation, it sprayed for 80 second with 1 weight% sodium carbonate aqueous solution (30 degreeC), and plating process was performed by the method similar to the said plating resistance evaluation. Then, peelability was evaluated by immersing in 3 weight% sodium hydroxide aqueous solution heated at 50 degreeC, and measuring the time until the hardened | cured material layer peels from the laminated board provided with the said surface resin layer. The evaluation results are shown in Table 3 and Table 4. Peelability evaluation means that it is so good that time is short.
(( 레지스트Resist 박리 잔사) Exfoliation residue)
박리성 평가 후의 상기 평가용 적층판을 이용하여, 표면 수지층(솔더 레지스트)의 개구부의 측벽(가로 2.6mm 세로 O.8mm 높이 30㎛)에, 완전히 박리할 수 없이 부착하고 있는 경화물층의 부착면적을 관찰했다. 부착면적의 관찰에는, SEM(히다치 계측기 서비스(주) 제 SE-2100)을 이용했다. 얻어진 부착면적을, 상기 개구부의 측벽 면적(2.6mm×0.8㎜×30㎛)로 나눈 값을 구하고, 랜덤하게 선택한 5개소의 상기 개구부에 있어서 얻어진 값의 평균값을, 경화물층의 잔사(레지스트 잔사)의 비율로 했다. 얻어진 레지스트 잔사의 비율에 따라, 하기 기준과 같이 레지스트 박리 잔여를 평가했다. 평가 결과를 표 3 및 표 4에 나타낸다. 또한, 레지스트 잔사가 적을수록 양호한 것을 의미한다.Adhesion of the hardened | cured material layer adhered to the side wall (2.6 mm of vertical 0.8 mm height 30 micrometers in height) of the opening part of a surface resin layer (solder resist) so that peeling cannot be carried out completely using the said laminated board for evaluation after peelability evaluation. The area was observed. SEM (Hitachi Instruments Service Co., Ltd. SE-2100) was used for the observation of the adhesion area. The value obtained by dividing the obtained adhesion area by the side wall area (2.6 mm x 0.8 mm x 30 µm) of the openings was obtained, and the average value of the values obtained in the five openings selected at random was determined from the residue of the cured product layer (resist residue). ). According to the ratio of the obtained resist residue, the resist peeling residual was evaluated as follows. The evaluation results are shown in Table 3 and Table 4. Moreover, it means that it is so good that there are few resist residues.
기준standard
A: 레지스트 잔사가 10% 미만 B: 레지스트 잔사가 10% 이상 50% 미만 C:레지스트 잔사가 50% 이상A: The resist residue is less than 10% B: The resist residue is 10% or more but less than 50% C: The resist residue is 50% or more
(( 도금욕Plating bath 오염성Pollutant ))
실시예 1~8 및 비교예 1~4에서 얻어진 감광성 엘리먼트 0.5m2를, PET 필름 및 폴리에틸렌필름을 벗긴 후, Ni-P도금액 오로테크 HP(아트테크 재팬(주) 제조, 상품명)에 83℃에서 5시간 침지하고, 무전해 Ni도금 처리를 실시했다.Examples 1-8 and Comparative Example 1, the photosensitive elements obtained in the 0.5m 2 ~ 4, after peeling the PET film and a polyethylene film, a Ni-P plating solution 83 ℃ Oro Tech HP (Art Tech Japan Co., Ltd., commercial name) Was immersed for 5 hours, and electroless Ni plating was performed.
이 도금 처리액을 이용하여, 상기 내도금성의 평가방법과 동일한 탈지처리로부터 무전해 Ni도금까지의 처리를 테스트 기판에 대해서 실시하고, 기판상에 석출한 Ni-P도금 막두께(석출 두께)를 측정했다. 도금 처리액 대신에 새로운 Ni-P도금액 오로테크 HP를 이용했을 경우를 블랭크로 하고, 블랭크의 석출막 두께를 100으로 했을 때의 석출막 두께의 상대값에 의해 도금욕 오염성을 평가했다. 평가 결과를 표 3 및 표 4에 나타낸다. 또한, 도금욕 오염성은 하기식에 의해 구해진다. Using this plating treatment liquid, the process from the same degreasing treatment to the electroless Ni plating as in the evaluation method of the above plating resistance was performed on the test substrate, and the Ni-P plating film thickness (precipitation thickness) deposited on the substrate was measured. Measured. When the new Ni-P plating solution Orotech HP was used instead of the plating treatment liquid, the plating bath contamination was evaluated by the relative value of the deposition film thickness when the deposition film thickness of the blank was 100. The evaluation results are shown in Table 3 and Table 4. In addition, plating bath contamination is calculated | required by the following formula.
도금욕 오염성(%)=각 시료의 석출 막두께(㎛)/블랭크의 석출 막두께(㎛)Plating bath contamination (%) = Precipitation film thickness of each sample (μm) / Precipitation film thickness of blank (μm)
(감도)(Sensitivity)
실시예 1~8 및 비교예 1~4로부터 얻어진 감광성 엘리먼트에 있어서의 감광층을, 압력 0.4MPa, 온도 110℃, 라미네이트 속도 1.5m/분의 조건에서 상기 구리박 적층판에 라미네이트하여 적층했다. 얻어진 적층체의 상에, 네가티브로서 스톱퍼 21단 스텝 타블렛을 배치하고, 고압 수은등 램프를 가지는 노광기((주)오크제작소 제조, 201GX)를 이용하여, 상기와 동일한 현상 조건에 있어서, 21단 스텝 타블렛의 8.0단을 경화시키는 데에 필요한 노광 에너지량(mJ/cm2)에 의해서 감도를 평가했다. 평가 결과를 표 3 및 표 4에 나타낸다. 또한, 노광 에너지 양이 낮을수록 감도가 높은 것을 의미한다.The photosensitive layer in the photosensitive element obtained from Examples 1-8 and Comparative Examples 1-4 was laminated | stacked and laminated | stacked on the said copper foil laminated board on the conditions of the pressure of 0.4 MPa, the temperature of 110 degreeC, and the lamination rate of 1.5 m / min. The stopper 21-stage step tablet is arrange | positioned as a negative on the obtained laminated body, and it is a 21-stage step tablet in the same developing conditions as the above using the exposure machine (201GX, Inc. make) which has a high pressure mercury lamp. Sensitivity was evaluated by the exposure energy amount (mJ / cm <2> ) required in order to harden | cure 8.0 steps of. The evaluation results are shown in Table 3 and Table 4. Further, the lower the exposure energy amount, the higher the sensitivity.
[표 3]TABLE 3
[표 4]TABLE 4
표 3 및 표 4에서, 실시예 1~8의 감광성 수지조성물은, 경화물층(레지스트 패턴)을 형성했을 경우의 내도금성, 박리성 및 도금욕 오염성이 바람직함을 알았다. 또한, 이들 감광성 엘리먼트는, 표면 수지층에 대한 형상 추종성도 양호했다.In Table 3 and Table 4, it turned out that the photosensitive resin composition of Examples 1-8 is preferable in the plating resistance, peelability, and plating bath contamination property at the time of forming hardened | cured material layer (resist pattern). Moreover, the shape followability with respect to the surface resin layer of these photosensitive elements was also favorable.
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