KR20080041578A - 주입동기형 레이저장치, 간섭계측장치, 노광장치 및디바이스 제조방법 - Google Patents
주입동기형 레이저장치, 간섭계측장치, 노광장치 및디바이스 제조방법 Download PDFInfo
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
- G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
- G01J2009/0223—Common path interferometry; Point diffraction interferometry
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- Condensed Matter Physics & Semiconductors (AREA)
- Epidemiology (AREA)
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- Lasers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (10)
- 시드레이저;상기 시드레이저로부터 출력되는 광의 일부의 성분이 시드레이저광으로서 주입되는 발진기;상기 시드레이저로부터 출력되는 광의 다른 일부의 성분의 주파수를 시프트시키는 주파수변환기;상기 발진기로부터 출력되는 광과 상기 주파수변환기로부터 출력되는 광이 합성된 광을 검출하는 포토디텍터; 및상기 포토디텍터의 출력신호에 포함되는 비트신호 성분에 근거해서 상기 발진기의 광로길이를 제어하는 제어기;를 구비하는 것을 특징으로 하는 주입동기형 레이저장치.
- 제 1 항에 있어서,상기 주파수변환기에서 사용되는 주파수 시프트의 양은 상기 발진기로부터 출력되는 광의 스펙트럴 폭보다 큰 것을 특징으로 하는 주입동기형 레이저장치.
- 제 1 항에 있어서,상기 주파수변환기가 음향광학소자를 포함하는 것을 특징으로 하는 주입동기형 레이저장치.
- 제 1 항에 있어서,상기 시드레이저로부터 출력되는 광의 파장을 안정화시키는 안정화유닛을 더 구비하는 것을 특징으로 하는 주입동기형 레이저장치.
- 제 4 항에 있어서,상기 안정화유닛은 기준공진기를 포함하고, 또한 상기 기준공진기로부터 출력되는 광의 파장을 기준으로 사용해서 상기 시드레이저로부터 출력되는 광의 파장을 안정화시키는 것을 특징으로 하는 주입동기형 레이저장치.
- 제 4 항에 있어서,상기 안정화유닛은 상기 시드레이저로부터 출력되는 광의 파장을 계측하는 파장계를 포함하고, 또한 상기 파장계의 출력에 근거해서 상기 시드레이저로부터 출력되는 광의 파장을 안정화시키는 것을 특징으로 하는 주입동기형 레이저장치.
- 시드레이저;상기 시드레이저로부터 출력되는 광의 일부의 성분이 시드레이저광으로서 주입되는 발진기;상기 발진기로부터 출력되는 광의 주파수를 시프트시키는 주파수변환기;상기 시드레이저로부터 출력되는 광의 다른 일부의 성분과 상기 주파수변환 기로부터 출력되는 광이 합성된 광을 검출하는 포토디텍터; 및상기 포토디텍터의 출력신호에 포함되는 비트신호 성분에 근거해서 상기 발진기의 광로길이를 제어하는 제어기;를 구비하는 것을 특징으로 하는 주입동기형 레이저장치.
- 제 1 항 내지 제 7 항 중의 어느 한 항에 기재된 주입동기형 레이저장치; 및상기 주입동기형 레이저장치로부터 출력되는 광을 사용해서 참조광속과 피검광속을 생성해서, 이 참조광속과 이 피검광속을 간섭시키는 간섭계;를 구비하는 것을 특징으로 하는 간섭계측장치.
- 제 1 항 내지 제 7 항 중의 어느 한 항에 기재된 주입동기형 레이저장치;상기 주입동기형 레이저장치로부터 출력되는 광을 사용하여 참조광속과 피검광속을 생성해서, 이 참조광속과 이 피검광속을 간섭시키는 간섭계; 및원판의 패턴을 기판 상에 투영하는 투영광학계를 구비하고,상기 간섭계가 상기 투영광학계의 수차를 계측하는 것을 특징으로 하는 노광장치.
- 디바이스 제조방법으로서,제 9 항에 기재된 노광장치를 사용해서, 기판에 도포된 감광제에 잠상패턴을 형성하는 공정; 및상기 잠상패턴을 현상하는 공정;을 포함하는 것을 특징으로 하는 디바이스 제조방법,
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2006302131 | 2006-11-07 | ||
JPJP-P-2006-00302131 | 2006-11-07 | ||
JP2007273089A JP2008141175A (ja) | 2006-11-07 | 2007-10-19 | 注入同期型レーザ装置、干渉計測装置、露光装置及びデバイス製造方法 |
JPJP-P-2007-00273089 | 2007-10-19 |
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KR20080041578A true KR20080041578A (ko) | 2008-05-13 |
KR100892017B1 KR100892017B1 (ko) | 2009-04-07 |
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KR1020070112412A KR100892017B1 (ko) | 2006-11-07 | 2007-11-06 | 주입동기형 펄스 레이저 장치, 간섭계측장치, 노광장치 및 디바이스 제조방법 |
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JP (1) | JP2008141175A (ko) |
KR (1) | KR100892017B1 (ko) |
TW (1) | TW200840166A (ko) |
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI451071B (zh) * | 2011-06-23 | 2014-09-01 | Asia Optical Co Inc | Optical power detector |
GB2499471B (en) * | 2012-06-01 | 2014-09-10 | M Squared Lasers Ltd | Method and apparatus for locking and scanning the output frequency from a laser cavity |
JP6943566B2 (ja) | 2016-12-16 | 2021-10-06 | 浜松ホトニクス株式会社 | レーザ装置及び波形制御方法 |
WO2021095523A1 (ja) * | 2019-11-15 | 2021-05-20 | 日亜化学工業株式会社 | 垂直外部共振器型面発光レーザ |
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JP3165193B2 (ja) * | 1991-09-06 | 2001-05-14 | アンリツ株式会社 | 狭線幅周波数安定化光源 |
JP3810531B2 (ja) * | 1997-09-26 | 2006-08-16 | 独立行政法人科学技術振興機構 | 光位相特性測定装置及び測定方法 |
JP2001015833A (ja) | 1999-06-29 | 2001-01-19 | Sony Corp | レーザ光発生装置 |
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- 2007-10-19 JP JP2007273089A patent/JP2008141175A/ja not_active Withdrawn
- 2007-11-06 KR KR1020070112412A patent/KR100892017B1/ko not_active IP Right Cessation
- 2007-11-07 TW TW096142042A patent/TW200840166A/zh unknown
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TW200840166A (en) | 2008-10-01 |
JP2008141175A (ja) | 2008-06-19 |
KR100892017B1 (ko) | 2009-04-07 |
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