KR20070099414A - Sputtering source, sputtering system, method for forming thin film - Google Patents

Abstract

A sputter film formed on the surface of an organic thin film without causing any damage thereon. Opening of the housing (101) of sputter sources (11-13) is closed with a shielding plate (103) and trap magnets (1051, 1052) are arranged on the opposite sides of the opening (107a). A target section (120) is arranged in the housing (101) and at the time of sputtering, the shielding plate (103) is connected with the earth potential, negatively charged particles such as electrons are entered into the shielding plate (103), and flying direction of the charged particles passed through the opening (107a) is curved by a magnetic field formed by the trap magnets (1051, 1052). Since the charged particles do not impinge on the surface of an object whereupon a film is to be formed when the object traverses above the sputter sources (11-13), damage on the organic thin film is suppressed.

Description

Sputter source, sputtering device, thin film manufacturing method {SPUTTERING SOURCE, SPUTTERING SYSTEM, METHOD FOR FORMING THIN FILM}

Field of technology

TECHNICAL FIELD This invention relates to the manufacturing method and manufacturing apparatus of organic electroluminescent element, and especially the manufacturing method and manufacturing apparatus of organic electroluminescent element which form an electrode by sputtering on an organic layer.

Background

Conventionally, when forming an electrode, especially a metal or an alloy electrode on an organic layer, the vapor deposition method was employ | adopted. This is because electrons hardly occur in the vapor deposition method and do not damage the organic layer.

However, in the vapor deposition method, since the metal or alloy is heated to a high temperature to evaporate and is deposited on the substrate on which the organic layer is formed, it is necessary to separate the vapor deposition source from the substrate sufficiently and to cool the substrate so that the organic layer is not damaged at high temperatures. In addition, the film formation rate could not be increased in order to suppress the temperature rise.

In addition, since a metal having a high boiling point cannot be used in the vapor deposition method, the metal to be used has a limitation. In particular, in the high boiling point metal compound etc., the vapor deposition method could not be used.

For this reason, the method of forming an electrode film on an organic layer by sputtering is proposed.

However, in the sputtering method which forms an electrode film on a normal semiconductor etc., the generated charged particle may damage an organic layer. Since the organic layer used in organic EL etc. is very delicate, the function, such as transfer of an electron or a hole, may be lost or remarkably deteriorated by the damage by the charged particle which entered.

For this reason, the technique which reduces the electron which collides with a board | substrate by forming the grid electrode or aperture of a ground potential or a positive potential between a board | substrate and a target is disclosed (patent document 1).

Moreover, the technique of generating the magnetic field parallel to a board | substrate and reducing the electron which collides with a board | substrate between a board | substrate and a target is disclosed (patent document 2).

However, in the above prior art, with the increase of the size of the substrate, the size of the grid electrode, the aperture, and the size of the magnetic field generating device need to be increased. Furthermore, when a large grid electrode or aperture is provided, the frequency of cleaning may increase, which may be disadvantageous in maintenance. In addition, there are cases where the effects of arcing due to peeling of the soil are greatly affected.

In addition, in the case where a plurality of metals are formed simultaneously or sequentially, a plurality of films may not be formed by one apparatus.

Patent Document 1: Japanese Patent Application Laid-Open No. 10-158821

Patent Document 2: Japanese Patent Application Laid-Open No. 10-228981

Disclosure of the Invention

Problems to be Solved by the Invention

When forming a sputtering film, such as a metal, by sputtering on an organic layer, the electrode film formation method and formation apparatus which can suppress the damage to an organic layer are provided.

Further, a sputtering film forming method and a forming apparatus that can be easily coped even when the substrate is enlarged are provided.

Further, an apparatus for forming an electrode film by sputtering, which can form a plurality of metals simultaneously or sequentially in one apparatus is provided.

Means to solve the problem

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, this invention is arrange | positioned apart from a target and the said target, and has a shielding plate which has an elongate opening part, so that sputtering particles discharged from the said target may pass through the opening part and reach the film-forming object surface. As the configured sputter source, first and second trap magnet portions are disposed on both sides of the opening portion along the longitudinal direction of the opening portion, and different magnetic poles are provided on the side surfaces facing the opening portions of the first and second trap magnet portions. This is the arranged sputter source.

Moreover, in this invention, the said shielding plate is a sputter source connected to the constant voltage with respect to the voltage applied to the said target.

In the present invention, the shielding plate is a sputter source having the same potential as the vacuum chamber in which the sputter source is disposed.

Moreover, in this invention, the said target is arrange | positioned inside the case shape of a container shape, The said shielding board is arrange | positioned through the insulator in the opening of the said case body, The insulated sputter | spatter between the said case body and the said shielding board Circle.

Moreover, in this invention, the said opening part is the sputter source comprised by arranging a some opening.

In addition, the present invention provides a sputtering source having a target and a shielding plate disposed apart from the target and having an elongated opening, the sputtering particles discharged from the target passing through the opening to reach the surface of the film forming object. The shielding plate is a sputter source connected to a constant voltage with respect to a voltage applied to the target.

In the present invention, the shielding plate is a sputter source having the same potential as the vacuum chamber in which the sputter source is disposed.

Further, in the present invention, the vacuum chamber and the shield plate are connected to a ground potential,

The target is a sputter source to which a negative voltage is applied to the ground potential.

Moreover, in this invention, the said target is arrange | positioned inside the case shape of a container shape, The said shielding plate is arrange | positioned through the insulator in the opening of the said case body, The said case body and the said shielding plate were insulated sputter sources. to be.

Moreover, in this invention, the said opening part is the sputter source comprised by arranging a some opening.

Moreover, this invention has a vacuum chamber and the sputter source arrange | positioned at the said vacuum chamber, The said sputter source has a target, a shielding plate, and the elongate opening formed in the said shielding plate, The said shielding plate is spaced apart from the said target And sputtered particles emitted from the target are configured to pass through the opening to reach the surface of the film forming object, and the shielding plate is connected to a constant voltage with respect to a voltage applied to the target, and the film forming object and the sputter The circle is a sputtering device configured to move relatively in the direction perpendicular to the longitudinal direction of the opening.

In addition, the present invention is a sputtering device in which the shield plate and the vacuum chamber are connected to a ground potential.

In addition, the present invention has a vacuum chamber and a sputter source disposed in the vacuum chamber, wherein the sputter source includes a target, a shield plate, an elongated opening formed in the shield plate, and first and second trap magnet portions. The shielding plate is arranged to be spaced apart from the target, and the sputtered particles emitted from the target are configured to pass through the opening to reach the film formation object surface, and the sputter source is arranged to be spaced apart from the target. And a shielding plate having an elongated opening, wherein the sputtered particles emitted from the target pass through the opening to reach the surface of the film forming object, and the first and second trap magnets are arranged in the longitudinal direction of the opening. Therefore, spurs which are arranged on both sides of the opening and face different sides of the openings of the first and second trap magnets are arranged with different magnetic poles. Device.

Moreover, in this invention, the said shielding plate is a sputtering apparatus connected to the constant voltage with respect to the voltage applied to the said target.

In addition, the present invention is a sputtering device in which the shield plate and the vacuum chamber are connected to a ground potential.

Moreover, this invention is a manufacturing method of the thin film which makes the thin film by making the sputtering particle discharge | released from the target surface arrange | positioned at a vacuum chamber pass through the opening part formed in the shielding plate, and reaching the organic thin film surface exposed on the film-forming object. It is a manufacturing method of the thin film which applies a constant voltage with respect to the electric potential of the said target to the said shielding plate.

Moreover, this invention connects the said shielding plate and the said vacuum chamber to ground potential,

It is a manufacturing method of a thin film which applies a negative voltage with respect to a ground potential to the said target.

In addition, the present invention provides a method for producing a thin film in which sputtered particles emitted from a target surface disposed in a vacuum chamber are allowed to pass through an opening provided in a shielding plate and reach an organic thin film surface exposed on a film formation object to form a thin film. It is a manufacturing method of the thin film which forms the magnetic force line parallel to the said shielding board, and makes the said sputtering particle which passed the said magnetic force line inject into the said organic thin film surface.

Moreover, this invention is a manufacturing method of the thin film which applies a constant voltage with respect to the electric potential of the said target to the said shielding plate.

Moreover, this invention is a manufacturing method of the thin film which connects the said shielding plate and the said vacuum chamber to a ground potential, and applies a negative voltage to a ground potential to the said target.

This invention is comprised as mentioned above, and the thin film is formed with neutral particle, without the electron and the charged particle with a large charge / mass ratio reaching a film forming target. Therefore, even if the thin film which is easy to be damaged on the film-forming object surface is formed, a thin film can be laminated | stacked on the thin film surface by the sputtering method.

Effects of the Invention

When the thin film is formed on the surface of the organic thin film by the sputtering method, no damage is caused to the organic thin film because electrons or ions do not enter the organic thin film surface.

Brief description of the drawings

1 is an example of the sputter apparatus of the present invention.

2 (a) and 2 (b) are examples of the sputter source of the present invention.

3 (a) and 3 (b) show another example of the sputter source of the present invention.

4 is another example of the sputter source of the present invention.

5 is another example of the sputter source of the present invention.

* Description of the symbols for the main parts of the drawings *

1: sputter device

11 to 16: sputter source

101: case body

105 ₁ , 105 ₂ : Trap magnet

107a, 107b: opening

120: target portion

122: target

To practice the invention  Best form for

With reference to FIG. 1, the code | symbol 11-13 is the sputter source of this invention, and code | symbol 1 is the sputter apparatus of this invention which has the sputter source 11-13.

This sputtering apparatus 1 has the vacuum chamber 10, and 1 to several sputtering sources 11-13 are arrange | positioned in the vacuum chamber 10. As shown in FIG. Here are three generations. The vacuum evacuation system 25 is connected to the vacuum chamber 10, and is comprised so that the inside of the vacuum chamber 10 may be evacuated.

In the vacuum chamber 10, the carry-in hole 21 and the carry-out hole 22 are formed, vacuum-exhaust the inside of the vacuum chamber 10 with the vacuum exhaust system 25, and after reaching | attaining predetermined pressure, the carry-in hole ( The vacuum valve formed in 21 is opened, and the film-forming object 30 is carried in into a vacuum chamber from the organic thin film manufacturing apparatus of the previous process connected to the carrying-in hole 21.

The organic thin film is formed in the surface of the film-forming object 30 carried in. This organic thin film is directed downward.

Each sputtering source 11-13 is comprised so that sputtering particle may be discharge | released as mentioned later. When the sputtering gas is introduced into the sputtering sources 11 to 13 to move the film forming target 30 while releasing sputtering particles from the sputtering sources 11 to 13 and passes through the respective sputtering sources 11 to 13 in turn, Sputter thin films, such as a conductive thin film, are formed on the surface of the organic thin film of the film-forming object 30. FIG.

When a sputtering film is formed on the surface of the organic thin film, the vacuum valve formed in the carrying out hole 22 is opened, and the film-forming object 30 in which the sputtering film was formed is conveyed from the carrying out hole 22 to the manufacturing apparatus of a later process.

The vacuum atmosphere is maintained in the vacuum chamber 10 also when carrying out the film-forming object 30 from the carrying in hole 21, and when carrying out from the carrying out hole 22. FIG.

In addition, the code | symbol 23 has shown the holder holding the film-forming object 30, and the code | symbol 24 has shown the movement apparatus which moves a film-forming object.

Here, each sputter source 11-13 is the same structure, the external appearance is shown in FIG. 2 (a), and the inside is shown in FIG.

This sputter source 11-13 has the elongate case body 101. As shown in FIG. The body 101 has a container shape, and an elongated target portion 120 is disposed on the bottom wall in the case body 101.

The target part 120 is comprised so that the target 122 is fixed on the surface of the target holder 121, and the magnetron discharge magnet 123 is arrange | positioned at the back surface side.

The target 122 has an elongated plate shape, and is disposed along the longitudinal direction of the case body 101 inside the case body 101, and the surface of the target 122 is parallel to the opening of the case body 101. Is headed for. Here, the target 122 is a conductive material such as a metal material.

When the potential to which the vacuum chamber 10 is connected is made into the ground potential, the target holder l2l is connected to the sputter power supply 108, and the alternating current voltage including a direct current negative voltage or a bias voltage is connected to the target holder 121. It is comprised so that it may apply to the target 122 through it.

On the opening of the container which the case body 101 comprises, the elongate shielding plate 103 is arrange | positioned through the insulator 104, and the opening of the case body 101 is blocked by the shielding plate 103. As shown in FIG. Thereby, the target 122 is surrounded by the side wall of the case body 101 before and after the front, rear, left and right, and also the shielding plate except the part of the opening part 107a mentioned later also the upper position of the target 122 is mentioned. It is blocked by (103). Therefore, the space on the surface of the target 122 is surrounded by the surface of the target 122, the wall surface of the tube body 101, and the shielding plate 103. The plasma described later is formed in this space.

At least the surfaces of the case body 101 and the shielding plate 103 are made of a conductive material. The case body 101 and the shielding plate 103 are made of metal, for example. The case body 101 is insulated from the shielding plate 103 and the vacuum chamber 10 and placed at the floating potential. In contrast, in this example, the shield plate 103 is electrically connected to the vacuum chamber 10. Since the vacuum chamber 10 is placed at the ground potential, the shield plate 103 is also placed at the installation potential.

However, the potential of the shield plate 103 is not a ground potential, but is a potential closer to the ground potential than the voltage applied to the target 122, and may be a constant voltage with respect to the ground potential if it is a constant voltage with respect to the target 122. Negative voltage may be used for. The case body 101 may be an insulator. When the shield plate 103 is set to a voltage other than the ground potential, the shield plate may be connected to the bias power supply 110 to apply a voltage.

In this sputtering source 11-13, the target 122 is arrange | positioned at the surface of the opening side of the case body 101 of the target holder 121, and the magnetron discharge magnet 123 is the target holder 121 It is arrange | positioned at the surface facing the bottom wall side of the case body 101 of the. The surface of the target 122 and the back surface of the shielding plate 103 face each other in parallel.

In the width direction center position of the shielding plate 103, the opening part 107a which elongates along the longitudinal direction of the shielding plate 103, and penetrates the shielding plate 103 in the thickness direction is formed. The insulator 104 is thin and long, and is located between the shield plate 103 and the upper end of the case body 101, but since the back surface of the shield plate 103 is exposed to the internal space of the case body 101, The opening 107a is configured to connect the internal space of the case body 101 to the internal space of the vacuum chamber 10 outside the case body 101.

At both side positions of the opening portion 107a on the shielding plate 103, elongated trap magnet portions 105 ₁ and 105 ₂ are disposed along the longitudinal direction of the opening portion 107a, respectively.

That is, the two trap magnet parts 105 ₁ and 105 ₂ are arrange | positioned in the position in which the side surface along one side of the long side was close to the opening part 107a, and the side surface along the other long side parallel to it is the opening part 107a. ) Is located far away from the.

The trap magnet portions 105 ₁ and 105 ₂ may be constituted by elongated permanent magnets, or small permanent magnets may be arranged long and thin. Moreover, you may comprise with an electromagnet.

In either case, the N pole of the opening of the trap magnetic portions 2 arranged on both sides of _{(107a) (1O5 1, 1O5} 2) center, one trap magnet (1O5 ₁₎ is formed along the first side in the longitudinal direction, the other in the trap magnet (1O5 _2), has magnetic pole (S-pole) opposite to the path is formed along the first side of the direction of its less.

The two trap magnets 10 5 ₁ and 10 5 ₂ are arranged on the side surfaces of the N pole and the S pole respectively facing the opening 107a, and thus the trap magnets 10 5 ₁ and 10 _{5 on} both sides of the opening 107a. ₂ ), the openings 107a are interposed therebetween so that magnetic poles having different polarities face each other.

Thus, a located above the opening (107a), 2 of a trap magnet (1O5 _1, 1O5 ₂₎ of, the sandwiched region between the side, in the width direction and parallel to the opening (107a) (longitudinal and vertical) lines of magnetic force extending in the one direction Is formed. This magnetic force line is substantially parallel to the surface of the shielding plate 103 and the surface of the target 122. In addition, here, the magnetic field was formed outside the case body 101 by arranging the trap magnets 10 ₅ and 10 _{5 on} the surface of the shielding plate 103, but the shielding plate is provided if it is protected against plasma. It may arrange | position to the back surface side of 103, and may form a magnetic force line in the area | region clamped below the opening part 107a by the side surface of two trap magnets 105 ₁ and 105 ₂ .

Further, the first and second trap magnets 10 5 ₁ and 10 5 ₂ may be disposed on the side surfaces of the openings 107a and the N and S poles may be disposed on the side surfaces of the openings 107a that face each other along the longitudinal direction. do.

In other words, as a position including the inside of the opening 107a, a magnetic force line covering the opening 107a may be formed substantially parallel to the surface of the shielding plate 103 at a position close to the opening 107a.

The sputtering gas supply system 109 is connected to the case body 101 of each sputter source 11-13, respectively, and the vacuum exhaust system 25 of the vacuum tank 10 operates, and each sputter source 11-13 is connected. After the inside of the case body 101 of 13 is evacuated together with the inside of the vacuum chamber 10 to reach a predetermined pressure, each case body 101 placed in a vacuum atmosphere by the sputtering gas supply system 109. Sputtering gas, such as argon gas, is introduce | transduced into ().

When a negative voltage or an alternating voltage is applied to the target 122, a plasma is formed inside the case body 101, the surface of the target 122 is sputtered, and sputtered particles of the material constituting the target 122 are subjected to the target ( 122) is released from the surface into the case body 101.

In the case body 101, an electric field is formed between the shield plate 103 and the target 122, and among the sputtered particles emitted from the target 122, an anion having a large charge / mass value (charge / mass ratio) is large. Most of the electrons are attracted to the shield plate 103, enter the shield plate 103, and become a current flowing between the ground potential and the shield plate.

Fly toward the opening 107a among the negative ions or electrons having a small charge / mass ratio that does not enter the cation, the neutral particles, and the shielding plate 103 passes through the opening 107a, and the trap magnets 10O ₁ , 1O5 _2. Try to traverse the lines of magnetic force forming it.

At this time, the charged ions are bent in the flying direction by their magnetic lines, and the electrons are trapped by the magnetic lines and enter the trap magnets 10 5 ₁ and 10 ₅ , the shield plate 103, and the vacuum chamber 10. .

Neutral particles are not affected by the lines of magnetic force and go straight. The film-forming object 30 moves inside the vacuum chamber 10, and passes through the position which contacts the opening part 107a toward the opening part 107a toward the opening part 107a on the opening part 107a. To this end, the neutral particles which have passed straight and have passed through the region sandwiched by the side surfaces of the two trap magnets 10 5 ₁ and 10 5 ₂ are incident at positions opposing the openings 107a in the film formation surface of the film formation object 30. The sputter thin film grows on the surface of the organic thin film of the film-forming object 30.

Therefore, only neutral sputtering particles are incident on the film formation surface of the film formation target 30, and no ions or electrons having charges are incident thereon, so that the organic thin film is not damaged by the charged particles.

Although each sputter source 11-13 is the same structure, the target 122 may arrange | position the target 122 comprised from the same material, and may arrange | position the target comprised from different materials. When the film-forming object 30 passes over one or more sputtering sources 11-13, the sputter thin film is formed of the neutral sputtered particles discharged from each sputtering source 11-13. When targets 122 of different materials are arranged, different kinds of thin films can be laminated. For example, an electron injection layer is formed by the sputter source 11 passing through for the first time, and then the sputter passing thereafter. It is possible to cause the electrode film to be formed by the circles 12 and 13.

In the sputter sources 11 to 13 described above, charged particles do not reach the film forming target 30 in both the shield plate 103 and the trap magnets 10 5 ₁ and 10 5 _{2 to} which the constant voltage is applied to the target 122. Although it does so, it is effective in either one and is included in this invention.

In addition, in the sputtering sources 11-13 demonstrated above, in one sputtering source 11-13, although one opening part 107a was formed by one elongate opening, FIG.3 (a), (b) As shown to the sputtering source 14 of), the several opening 131 may be lined up in a line or multiple rows, and may comprise one opening part 107b. The openings 131 of FIGS. 3A and 3B are lined up in a row.

In addition, in the said sputtering sources 11-13, although the target part 120 was arrange | positioned on the bottom wall of the case body 101, this invention is not limited to this, The two target parts along the side surface of a longitudinal direction You may arrange | position 120.

In this case, as in the sputtering source 15 of FIG. 4, the targets 122 of the two target portions 120 along the side surface in the longitudinal direction may be disposed to face each other in parallel. For example, it is also possible to face the center axis of the case body 101.

In addition to the target portion 120 along the side surface in the longitudinal direction, as in the sputter source 16 of FIG. ) May be disposed. If the area to be sputtered of the target 122 is increased, a large amount of sputtered particles are released, so that the deposition rate is improved.

In addition, in each said Example, although the sputter source 11-13 of the 1st example and the sputter source 14, 15, 16 of another example were all arrange | positioned inside the vacuum chamber 10, sputter source Even if a part of 11 to 16 protrudes out of the vacuum chamber 10, even if the opening parts 107a and l07b face the inside of the vacuum chamber 10, since it is arrange | positioned in the vacuum chamber 10, It is contained in the sputter apparatus of this invention.

Claims (20)

Targets, It is disposed apart from the target and has a shield plate having an elongated opening, A sputtering source configured to allow sputtered particles emitted from said target to pass through said opening to reach a surface of a film formation object, Along the longitudinal direction of the said opening part, the 1st, 2nd trap magnet part is arrange | positioned at both sides of the said opening part, A sputter source, wherein different magnetic poles are disposed on side surfaces of the first and second trap magnet portions that face the openings. The method of claim 1, And the shield plate is connected to a constant voltage relative to the voltage applied to the target. The method of claim 2, The shielding plate is a sputtering source having the same potential as the vacuum chamber in which the sputtering source is disposed. The method of claim 2, The target is disposed inside the case body of the container shape, The said shielding plate is arrange | positioned through the insulator in the opening of the said case body, The sputter source of the said insulated body and the said shielding plate was insulated. The method according to any one of claims 1 to 4, A sputtering source, wherein the opening is formed by arranging a plurality of openings. Targets, Has a shield plate disposed spaced from the target and having an elongated opening, A sputtering source configured to allow sputtered particles emitted from said target to pass through said opening to reach a surface of a film formation object, And the shield plate is connected to a constant voltage relative to the voltage applied to the target. The method of claim 6, The shielding plate is a sputtering source having the same potential as the vacuum chamber in which the sputtering source is disposed. The method of claim 7, wherein The vacuum chamber and the shield plate are connected to a ground potential, And the target is a sputter source to which a negative voltage is applied to the ground potential. The method of claim 6, The target is disposed inside the case body of the container shape, The said shielding plate is arrange | positioned through the insulator in the opening of the said case body, The said case body and the said shielding plate are insulated. The method according to any one of claims 6 to 9, A sputtering source, wherein the opening is formed by arranging a plurality of openings. Having a vacuum chamber and a sputter source disposed in the vacuum chamber, The sputter source has a target, a shielding plate, and an elongated opening formed in the shielding plate, The shield plate is disposed apart from the target, Sputtered particles emitted from the target are configured to pass through the opening to reach the surface of the film formation object, The shield plate is connected to a constant voltage relative to the voltage applied to the target, The sputtering apparatus, wherein the film forming object and the sputter source are configured to move relatively in the direction perpendicular to the longitudinal direction of the opening. The method of claim 11, And the shield plate and the vacuum chamber are connected to a ground potential. Having a vacuum chamber and a sputter source disposed in the vacuum chamber, The sputter source has a target, a shielding plate, an elongated opening formed in the shielding plate, and first and second trap magnet portions, The shield plate is disposed apart from the target, Sputtered particles emitted from the target are configured to pass through the opening to reach the surface of the film formation object, The sputter source is a target, It is disposed apart from the target and has a shield plate having an elongated opening, The sputtered particles emitted from the target are passed through the opening to reach the surface of the deposition object, The first and second trap magnets are disposed on both sides of the opening along the longitudinal direction of the opening, A sputtering device, wherein different magnetic poles are disposed on side surfaces of the first and second trap magnet portions that face the openings. The method of claim 13, And the shield plate is connected to a constant voltage relative to the voltage applied to the target. The method of claim 14, And the shield plate and the vacuum chamber are connected to a ground potential. A method for producing a thin film in which sputtered particles emitted from a target surface disposed in a vacuum chamber pass through an opening provided in a shielding plate and reach an organic thin film surface exposed on a film formation object to form a thin film. A constant voltage is applied to the shielding plate with respect to the potential of the target. The method of claim 16, Connecting the shielding plate and the vacuum chamber to a ground potential; A negative voltage is applied to the target with respect to the ground potential. A method for producing a thin film in which sputtered particles emitted from a target surface disposed in a vacuum chamber pass through an opening formed in a shielding plate, and reach a surface of an organic thin film exposed on a film forming object to form a thin film. A method for producing a thin film, wherein a magnetic force line parallel to the shielding plate is formed, and the sputtered particles passing through the magnetic force line are incident on the surface of the organic thin film. The method of claim 18, A method for producing a thin film, wherein the shielding plate is applied with a constant voltage to the potential of the target. The method of claim 19, Connecting the shielding plate and the vacuum chamber to a ground potential; A negative voltage is applied to the target with respect to the ground potential.

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