JP2009138230A - Sputtering system and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering system, upon film deposition by a sputtering process, which prevents the incidence of electrons and oxygen ions on a substrate and reduces damage to a substrate or a film on the substrate, thus can improve film properties, and to provide a film deposition method. <P>SOLUTION: Regarding a sputtering system comprising: a target 22 provided with a film deposition material; and a carrying means relatively moving a substrate W to the target 22 while almost parallel arranging the surface 22a of the target 22 and the surface W1 of the substrate W, and the length in the short direction of the surface 22a in the target 22 is formed so as to be shorter than the length in the longitudinal direction of the surface W1 in the substrate W, the space between the target 22 and the substrate W is provided with a permanent magnet 26 applying a magnetic field to the short direction of the target 22, and the substrate W is carried along the short direction of the target 22. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a sputtering apparatus and a film forming method.

Conventionally, in a liquid crystal display (LCD), a plasma display (PDP), etc., in order to continuously form a thin film such as a transparent conductive film on a large area glass substrate with a uniform film thickness, Sputtering devices have been proposed.
One type of these sputtering apparatuses is an in-line type sputtering apparatus. This apparatus arranges a plurality of targets in the sputter deposition chamber, and deposits the deposition material knocked out of the target on the substrate while the substrate is transported at a constant speed along the target arrangement direction. Thus, an apparatus for forming a desired thin film on a substrate. According to this configuration, a thin film having a uniform thickness can be continuously formed on a large-area glass substrate.

On the other hand, an ITO (Indium Tin Oxide) film is widely used as a transparent conductive film formed on a glass substrate.
By the way, when forming an oxide film such as an ITO film, oxygen ions are generated in the plasma from oxygen atoms contained in the target or oxygen gas introduced during sputtering, and are accelerated by the target potential and incident on the substrate. . When electrons or oxygen ions are incident on the substrate, there is a problem in that the film properties are impaired such as damage to the crystal orientation of the ITO film and an increase in the resistance value of the ITO film.
Therefore, it is important to reduce damage by reducing electrons and oxygen ions incident on the ITO film and the substrate.

Therefore, for example, as shown in Patent Document 1, as a deflection magnetic field generating means that generates a deflection magnetic field in the vicinity of the film formation surface that intersects the substrate transport direction and is substantially parallel to the film formation surface of the substrate. What has provided the magnet is known. According to this configuration, by forming the deflection magnetic field in the vicinity of the substrate by the deflection magnetic field generating means, it is possible to prevent the charged particles flying in the substrate direction from deflecting the flight direction and entering the film formation surface. It is said that.
Japanese Patent Laid-Open No. 5-70951

However, the above prior art has a problem that the magnetic field generated at the central portion of the substrate is weak because the deflection magnetic field generating means is disposed at both ends of the substrate. In recent years, glass substrates having a side of 2 to 3 m tend to be used as a film formation target. When such a large glass substrate is used, the magnetic field generated particularly at the center of the substrate becomes weak. In this case, charged particles such as electrons and oxygen ions cannot be efficiently deflected. As a result, electrons and oxygen ions are incident on the glass substrate surface, and the substrate surface is damaged by these electrons and oxygen ions. I will receive it.
In addition, since the mass of oxygen ions is much heavier than the mass of electrons, there is a problem that oxygen ions cannot be deflected unless a strong magnetic field is generated.

  Therefore, the present invention has been made to solve the above-described problems, and prevents the charged particles from entering the substrate during film formation by sputtering, and damages the substrate and the film on the substrate. An object of the present invention is to provide a sputtering apparatus and a film forming method capable of improving film characteristics by reducing the film characteristics.

In order to solve the above-described problems, a sputtering apparatus according to the present invention is configured such that a target provided with a film forming material, the surface of the target and the surface of the substrate are disposed substantially in parallel, and the target and the substrate are And a moving mechanism for moving the target, wherein the length of the surface of the target in the first direction is shorter than the length of the surface of the target in the first direction. In the meantime, it has magnetic field application means for applying a magnetic field in the first direction, and the moving mechanism moves the magnetic field application means relative to the substrate together with the target.
According to this configuration, the magnetic field applying means for generating a magnetic field in the first direction is provided between the target and the substrate, and the magnetic field applying means is moved relative to the substrate together with the target. A strong magnetic field can be generated during Therefore, charged particles generated in the plasma are subjected to a Lorentz force from the magnetic field generated by the magnetic field applying means, and deflected so as to move in a direction perpendicular to the flight direction and the magnetic field direction of the charged particles, that is, in parallel with the substrate. Is done. Therefore, not only the initial growth process of the film forming material but also the entire film forming process can prevent charged particles from entering the surface of the substrate and reduce damage to the substrate and the film on the substrate. It can suppress that the resistance value of the film formed in this increases. Therefore, film characteristics such as crystallinity of a film formed on the substrate through the entire film formation process can be improved.

In addition, an adhesion preventing member is provided between the target and the substrate to regulate a scattering range of the film forming material from the target, and the magnetic field applying means is opposite to the target across the adhesion preventing member. It is arranged on the side.
According to this configuration, the magnetic field applying means is disposed on the opposite side of the target with the adhesion preventing member interposed therebetween, so that the magnetic field applying means becomes a blind spot of the target. The deposition material can be prevented from adhering.

The moving mechanism moves the substrate in the first direction with respect to the fixed target, and a plurality of the targets are provided along the first direction.
According to this configuration, it is possible to efficiently perform the film forming process using a plurality of targets while moving the substrate in the first direction. Accordingly, a large amount of a thin film having excellent film characteristics and a uniform film thickness can be continuously formed on a large-area substrate.

Further, the magnetic field applying means disposed between the pair of adjacent targets is used for applying a magnetic field between the pair of targets and the substrate.
According to this configuration, the apparatus cost can be reduced by using the magnetic field applying means arranged between a pair of adjacent targets for applying a magnetic field between the pair of targets and the substrate.

In addition, the target includes an ITO film forming material.
According to this configuration, since electrons or oxygen ions generated in the plasma can be prevented from entering the surface of the substrate, not only the initial growth process of the ITO film, which is a transparent conductive film, but also the entire growth of the ITO film. In the film process, damage to the substrate and the film on the substrate can be reduced. As a result, the ITO film can maintain film characteristics such as crystallinity throughout the entire film formation process.

In addition, a substrate holding means for holding the substrate, a sputtering chamber in which the target is disposed and the substrate is moved by the moving mechanism, a vacuum evacuation means for evacuating the sputtering chamber, and a sputtering chamber in the sputtering chamber It is an in-line type sputtering apparatus provided with a gas supply means for supplying a sputtering gas and a power source for applying a voltage to the target.
According to this configuration, the sputtering gas is supplied from the gas supply means to the sputtering chamber, and a voltage is applied from the power source to the target. As a result, ions of the sputtering gas excited by the plasma in the sputtering chamber collide with the target and eject atoms of the film forming material. Then, a film of a film forming material can be formed on the surface of the substrate by attaching the protruded atoms to the substrate. In the inline sputtering apparatus, since the substrate held by the substrate holding means moves relative to the target, film formation can be performed on the entire surface of the substrate. Further, by continuously moving the plurality of substrates in the first direction, film formation can be continuously performed on the plurality of substrates.

On the other hand, the film forming method of the present invention includes a target provided with a film forming material, and a moving mechanism that relatively moves the target and the substrate while arranging the surface of the target and the surface of the substrate in parallel. And the length of the surface of the target in the first direction is shorter than the length of the surface of the substrate in the first direction, and a magnetic field is applied in the first direction between the target and the substrate. Using a sputtering apparatus having a magnetic field applying means, applying a magnetic field in the first direction by the magnetic field applying means, and moving the magnetic field applying means relative to the substrate together with the target by the moving mechanism, Sputter film formation is performed.
According to this configuration, the magnetic field applying means for generating a magnetic field in the first direction is provided between the target and the substrate, and the magnetic field applying means is moved relative to the substrate together with the target. A strong magnetic field can be generated during Therefore, charged particles generated in the plasma are subjected to a Lorentz force from the magnetic field generated by the magnetic field applying means, and deflected so as to move in a direction perpendicular to the flight direction and the magnetic field direction of the charged particles, that is, in parallel with the substrate. Is done. Therefore, not only the initial growth process of the film forming material but also the entire film forming process can prevent charged particles from entering the surface of the substrate and reduce damage to the substrate and the film on the substrate. It can suppress that the resistance value of the film formed in this increases. Therefore, film characteristics such as crystallinity of a film formed on the substrate through the entire film formation process can be improved.

  According to the present invention, magnetic field applying means for generating a magnetic field in the first direction is provided between the target and the substrate, and the magnetic field applying means is moved relative to the substrate together with the target. A strong magnetic field can be generated during Therefore, charged particles generated in the plasma are subjected to a Lorentz force from the magnetic field generated by the magnetic field applying means, and deflected so as to move in a direction perpendicular to the flight direction and the magnetic field direction of the charged particles, that is, in parallel with the substrate. Is done. Therefore, not only the initial growth process of the film forming material but also the entire film forming process can prevent charged particles from entering the surface of the substrate and reduce damage to the substrate and the film on the substrate. It can suppress that the resistance value of the film formed in this increases. Therefore, film characteristics such as crystallinity of a film formed on the substrate through the entire film formation process can be improved.

Next, based on FIGS. 1-4, the sputtering apparatus and the film-forming method which concern on embodiment of this invention are demonstrated.
(Magnetron sputtering equipment)
FIG. 1 is a schematic configuration diagram (front view) of a magnetron sputtering apparatus according to the present embodiment.
As shown in FIG. 1, a magnetron sputtering apparatus (hereinafter referred to as a sputtering apparatus) 10 is an in-line sputtering apparatus, and is a substrate W preparation / removal chamber 12 and a film formation chamber (sputter chamber) 14 for the substrate W. And. Rough evacuation means 12p such as a rotary pump is connected to the charging / unloading chamber 12, and two high vacuum evacuation means (vacuum evacuation means) 14p such as a turbo molecular pump are connected to the film forming chamber 14, for example. ing. In the sputtering apparatus 10 of the present embodiment, the substrate W is supported in a vertical shape and carried into the preparation / removal chamber 12, and the preparation / removal chamber 12 is evacuated by the roughing exhaust unit 12 p. Next, the substrate W is transferred to the film forming chamber 14 evacuated by the high vacuum evacuation unit 14p, and film forming processing is performed. The substrate W after film formation is configured to be carried outside through the preparation / removal chamber 12.

In addition, a gas supply means 17 for supplying a sputtering gas such as Ar is connected to the film forming chamber 14. Note that a reaction gas such as O ₂ can be supplied from the gas supply means 17.

2 is a cross-sectional view of the film forming chamber corresponding to the line AA in FIG. 1, and FIG. 3 is a cross-sectional view of the film forming chamber along the line BB in FIG.
As shown in FIGS. 2 and 3, a substrate W held by a substrate holding unit (not shown) is vertically arranged on one side in the width direction in the film forming chamber 14. On the other side, a plurality of sputter cathode mechanisms 20 are arranged in a vertical shape substantially parallel to the surface W1 of the substrate W.
The substrate W of the present embodiment has a substantially rectangular shape in plan view, has a long side and a short side, and the long side is, for example, about 2 to 3 m. As the substrate W, for example, a substrate made of quartz, resin (plastic, plastic film), glass, or the like can be used. In this embodiment, a glass substrate is suitably used.

  The substrate holding means is connected to a transport means (moving mechanism) (not shown), and the transport means transports the substrate W in the direction along the long side direction (first direction: see arrow F in FIG. 2). The Although only two sputter cathode mechanisms 20 are shown in FIGS. 1 to 3, two or more sputter cathode mechanisms 20 may be provided.

Note that the substrate holding means and the conveying means in the present embodiment can use various configurations as shown below.
For example, a configuration in which the substrate W is mounted on a support surface of a base plate provided substantially parallel to the sputtering cathode mechanism 20 is possible. Thereby, the substrate W can be held so that the surface 22a of the target 22 described later in the sputtering cathode mechanism 20 and the surface W1 of the substrate W are substantially parallel. In this case, the base plate holding the substrate is transported by transporting means such as a transporting roller connected to a motor or a rack and pinion mechanism.
In addition, a configuration in which the upper edge and the lower edge of the substrate W are sandwiched by grooved rollers and the substrate W is held so that the surface 22a of the target 22 and the surface of the substrate W are substantially parallel to each other is possible. . In this case, the substrate can be transported by rotating the grooved roller with a motor or the like.

The sputter cathode mechanism 20 includes a target 22, a chimney (protection member) 24, and a permanent magnet (magnetic field applying means) 26.
The target 22 has a rectangular shape in plan view, and a plurality of targets 22 are arranged such that the short direction (first direction) coincides with the transport direction (long side direction) of the substrate W. That is, the substrate W is transported along the array direction of the targets 22 by the transport means. Note that the width of the target 22 in the short side direction is shorter than the long side of the substrate W, for example, about 300 mm. Adjacent targets 22 are arranged with an interval of about 150 to 200 mm.

Each target 22 is arranged to face each other with a predetermined interval (for example, 90 to 100 mm) between the surface 22a and the surface W1 of the substrate W.
As the material of the target 22, preferably to contain the film-forming material of the ITO film which is a transparent conductive film, for example, may be only an In ₂ O _3, it may be obtained by adding a predetermined material to an In ₂ O _3. Further, in order to form a transparent conductive film made of a ZnO-based film or a SnO ₂ -based film, the target 22 may be composed of ZnO or SnO ₂ with a predetermined material added. According to the present invention, a transparent conductive film having high crystal orientation can be formed.

  The target 22 is bonded to the back plate 30 with a brazing material such as indium. The target 22 is attached to the wall surface 41 via the insulating plate 40 at the outer peripheral portion on the back surface of the back plate 30. The target 22 is connected to an external power source (power source) via the back plate 30 and is held at a negative potential (cathode). Outside the film forming chamber 14 (see FIG. 1), a magnetic circuit 32 that generates a horizontal magnetic field on the front surface 22a of the target 22 is disposed along the back surface of the back plate 30. The magnetic circuit 32 includes a central magnet 33 and an outer peripheral magnet 34 having different polarities on the surface on the back plate 30 side.

  The chimney 24 is a member in which L-shaped members in plan view face each other, and is provided so as to surround both sides along the longitudinal direction of each target 22. Accordingly, the targets 22 are blocked by the chimney 24. The chimney 24 regulates the scattering range of the particles knocked out from the target 22 and prevents the particles from adhering to a location other than the surface W1 of the substrate W (for example, the wall surface of the film forming chamber 14). . Further, the incident angle of the particles with respect to the substrate W is limited to a predetermined angle range.

  An opening 28 that opens toward the substrate W is formed in a region between the facing chimneys 24 where the surface 22a of the target 22 and the surface W1 of the substrate W face each other. The width a between the chimneys 24 surrounding the target 22 is about 400 mm, and the width b of the opening 28 is about 310 mm which is slightly larger than the width of the target 22 described above. The width c between adjacent chimneys 24 is formed with an interval of about 50 to 70 mm.

  A plurality of permanent magnets 26 are arranged at equal intervals along the longitudinal direction of each chimney 24 on the opposite side of the target 22 across each chimney 24. Each permanent magnet 26 is disposed so as to protrude toward the substrate W from the same plane as the opening 28 of the chimney 24. Specifically, the permanent magnet 26 is disposed at an intermediate position between the target 22 and the substrate W, that is, a position of about 45 to 50 mm from the surface W1 of the substrate W.

  Further, the plurality of permanent magnets 26 corresponding to the plurality of targets are arranged so that the N poles and the S poles are alternated along the transport direction of the substrate W. Then, by generating a magnetic field between the opposing permanent magnets 26, a magnetic field parallel to the surface W <b> 1 of the substrate W and along the short direction of the target 22 for each region where each target 22 and the substrate W are opposed. (See FIG. 2). In this embodiment, the case where a plurality of permanent magnets 26 are arranged along the longitudinal direction of the chimney 24 has been described. However, one permanent magnet corresponding to the length of the chimney 24 in the longitudinal direction may be arranged. Absent.

(Film formation method)
Next, a film forming method using the sputtering apparatus of this embodiment will be described.
First, a sputtering gas is supplied from the gas supply means 17 (see FIG. 1) to the film forming chamber 14, and a sputtering voltage is applied to the target 22 from the external power source via the back plate 30. The ions of the sputtering gas excited by plasma in the film forming chamber 14 collide with the target 22 and cause the atoms of the film forming material of the ITO film to jump out. Then, an ITO film is formed on the surface W1 of the substrate W by attaching the jumped out atoms to the substrate W. As in the present embodiment, in the in-line sputtering apparatus (sputtering apparatus 10), the substrate W held by the substrate holding means moves relative to the target 22, so that film formation can be performed on the entire surface W1 of the substrate W. it can. In addition, by continuously moving the plurality of substrates W in the long side direction (first direction: arrow F in FIG. 2), film formation can be continuously performed on the plurality of substrates W.

  By the way, when forming an oxide film such as an ITO film, oxygen ions are generated in the plasma from oxygen atoms contained in the target or oxygen gas introduced during sputtering, and are accelerated by the target potential and incident on the substrate. . When electrons or oxygen ions are incident on the substrate, there is a problem in that the film properties are impaired such as damage to the crystal orientation of the ITO film and an increase in the resistance value of the ITO film.

  Here, in the present embodiment, a magnetic field is generated between the substrate W and the target 22 by the permanent magnet 26, thereby preventing electrons and oxygen ions from entering the surface W1 of the substrate W.

  Specifically, a permanent magnet 26 disposed at an intermediate position between the target 22 and the substrate W generates a magnetic field parallel to the surface W1 of the substrate W and along the short direction of the target 22 (in FIG. 2). (See arrow Q). In this case, the magnetic field applied between the substrate W and the target 22 is preferably 10 (Oe) or more. When the electrons and oxygen ions generated in the plasma and flying toward the substrate W pass through the opening 28 of the chimney 24 and reach the region where the magnetic field is generated, the transport direction of the substrate W is reached. Will be deflected in a direction orthogonal to (see arrow R in FIG. 2).

This is based on the fact that a charged particle having a charge q generally receives a Lorentz force F represented by F = q (E + v × B). E is the electric field in the space where the particles fly, B is the strength of the magnetic field, and v is the velocity of the charged particles.
Here, by forming the magnetic field B in a direction perpendicular to the velocity v of the charged particles (parallel to the surface W1 of the substrate W), the charged particles receive a force in a direction perpendicular to these directions. Therefore, the electrons and oxygen ions that have received the Lorentz force are bent in a direction orthogonal to the flight direction and the magnetic field direction, that is, in a direction parallel to the surface W1 of the substrate W, and thus fly without entering the surface W1 of the substrate W. Will be.

Therefore, according to the present embodiment, the permanent magnet 26 that applies a magnetic field along the short direction of the target 22 is provided between the target 22 and the substrate W, and the transport direction (long side direction) of the substrate W is set. The substrate W is transported so as to coincide with the short direction of the target 22.
According to this configuration, a strong magnetic field of 10 (Oe) or more is generated between the substrate W and the target 22 by generating a magnetic field along the short direction of the target 22 between the target 22 and the substrate W. Can be generated. Therefore, electrons and oxygen ions generated from the target 22 are deflected along the short side direction of the substrate W in parallel with the substrate W under the Lorentz force.
Therefore, not only in the initial growth process of the ITO film, which is a transparent conductive film, but also in the entire ITO film formation process, electrons and oxygen ions are prevented from entering the surface W1 of the substrate W, and are formed on the substrate W and the substrate W. It is possible to reduce damage to the ITO film and the like. Thereby, it can suppress that the resistance value of the film-forming material increases. As a result, the ITO film formed on the substrate W can maintain film characteristics such as crystallinity throughout the entire film formation process.

Further, the permanent magnet 26 is arranged on the opposite side of the target 22 across the chimney 24 by utilizing the fact that the film forming material knocked out of the target 22 always passes through the opening 28 of the chimney 24. It was. As a result, a magnetic field can be applied to the entire scattering range of the film forming material from the target 22, and electrons and oxygen ions can be reliably prevented from entering the substrate W. Therefore, damage to the ITO film or the like formed on the substrate W due to electrons or oxygen ions can be further reduced. Further, since the permanent magnet 26 becomes the blind spot of the target 22 by the chimney 24, it is possible to prevent the particles knocked out from the target 22 from adhering to the permanent magnet 26.
Further, in the in-line type sputtering apparatus 10 as in the present embodiment, since the film forming process is performed while moving the substrate W in the direction in which the targets 22 are arranged, the film forming process is efficiently performed using a plurality of targets 22. It can be performed.

  Thus, by arranging the permanent magnets 26 at both ends of each target 22 in the short direction and applying a magnetic field along the short direction of each target 22, the permanent magnets at both ends of the substrate as in the past. Compared with the case where the substrate is arranged, a strong magnetic field can be obtained even in the central portion of the large substrate. Therefore, it becomes possible to reliably deflect electrons and oxygen ions having a mass number larger than that of electrons, and reliably prevent them from entering the surface W1 of the substrate W. Accordingly, since it is possible to suppress an increase in the resistance value of the transparent conductive film such as an ITO film, a thin film having excellent film characteristics and a uniform film thickness is continuously formed on the surface W1 of the large-area substrate W. can do.

  Furthermore, since the permanent magnet 26 is provided on the opposite side of the chimney 24 across the target 22 and at an intermediate position between the substrate W and the target 22, interference with a magnetic field generated from the target 22 can be prevented. it can. Furthermore, since the magnetic field generated from the permanent magnet 26 does not spring out or penetrate into the substrate W, a magnetic field parallel to the surface W1 of the substrate W can be efficiently applied.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. The constituent members and combinations shown in the above-described examples are merely examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

For example, in the present embodiment, the permanent magnets are arranged on the opposite side of the target across each chimney (see FIG. 2). However, as shown in FIG. 4, one permanent magnet 26 is placed between the chimneys 24 of the adjacent targets 22. It is good also as a structure which arrange | positions only a row | line | column and shares the permanent magnet 26 between the chimneys 24 of the adjacent target 22. FIG. That is, the permanent magnet 26 disposed between the pair of adjacent targets 22 is used for applying a magnetic field between the pair of targets 22 and the substrate W. In this case, it is preferable that the permanent magnet 26 is disposed in the middle position between the adjacent targets 22 along the longitudinal direction of the target 22. As a result, the number of permanent magnets 26 can be reduced, and a magnetic field can be efficiently generated between the substrate W and the target 22, and the apparatus cost can be reduced.
In the present embodiment, a plurality of targets are arranged and the substrate is transported along the arrangement direction. However, the design can be changed as appropriate as long as the target and the substrate move relative to each other.

It is a schematic block diagram (front view) of the magnetron sputtering apparatus in the embodiment of the present invention. It is sectional drawing which follows the AA line of FIG. It is sectional drawing which follows the BB line of FIG. It is sectional drawing equivalent to the AA line of FIG. 1 of the magnetron sputtering apparatus in other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Sputtering apparatus 14 ... Film-forming chamber (sputtering chamber) 14p ... High vacuum evacuation means (vacuum evacuation means) 17 ... Gas supply means 22 ... Target 24 ... Chimney (protection member) 26 ... Permanent magnet (magnetic field application means) W …substrate

Claims (7)

A target with a film-forming material;
A moving mechanism for relatively moving the target and the substrate while arranging the surface of the target and the surface of the substrate substantially in parallel,
In the sputtering apparatus in which the length of the surface of the target in the first direction is shorter than the length of the surface of the substrate in the first direction,
A magnetic field applying means for applying a magnetic field in the first direction between the target and the substrate;
The said moving mechanism moves the said magnetic field application means relatively with respect to the said board | substrate with the said target, The sputtering device characterized by the above-mentioned. Between the target and the substrate, an adhesion preventing member that regulates the scattering range of the film forming material from the target is provided,
The sputtering apparatus according to claim 1, wherein the magnetic field applying unit is disposed on the opposite side of the target with the adhesion preventing member interposed therebetween. The moving mechanism moves the substrate in the first direction relative to the fixed target;
The sputtering apparatus according to claim 1, wherein a plurality of the targets are provided along the first direction.   The sputtering apparatus according to claim 3, wherein the magnetic field applying unit disposed between the pair of adjacent targets is used for applying a magnetic field between the pair of targets and the substrate.   5. The sputtering apparatus according to claim 1, wherein the target contains an ITO film forming material. The sputtering apparatus according to any one of claims 1 to 5,
Substrate holding means for holding the substrate;
A sputtering chamber in which the target is disposed and the substrate is moved by the moving mechanism;
Evacuation means for evacuating the sputtering chamber;
Gas supply means for supplying a sputtering gas into the sputtering chamber;
A sputtering apparatus, comprising: an in-line sputtering apparatus including a power source for applying a voltage to the target. A target with a film-forming material;
A moving mechanism for relatively moving the target and the substrate while arranging the surface of the target and the surface of the substrate in parallel,
The length of the surface of the target in the first direction is formed shorter than the length of the surface of the substrate in the first direction,
Using a sputtering apparatus having a magnetic field applying means for applying a magnetic field in the first direction between the target and the substrate,
Sputter deposition is performed by applying a magnetic field in the first direction by the magnetic field applying unit and moving the magnetic field applying unit relative to the substrate together with the target by the moving mechanism. Method.

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