KR102729112B1 - Batch transfer head and its processing method - Google Patents

Abstract

The present application provides a batch transfer head and a processing method thereof. The batch transfer head includes an elastic substrate and a rigid suction head group, wherein the rigid suction head group includes a plurality of rigid suction heads, and the rigid suction head group is arranged on the elastic substrate, so that the position of each rigid suction head included in the rigid suction head group is adjusted through deformation of the elastic substrate, so as to enable attachment to a corresponding target chip to be transferred, thereby reducing the occurrence of poor attachment or non-attachment of the target chip due to deviation in the processing of the target chip to be transferred, and increasing the number of target chips to be transferred that can be absorbed by the rigid suction head group, thereby improving the transfer efficiency.

Description

Batch transfer head and its processing method

Related Applications

This application claims the benefit of Chinese patent application filed on April 29, 2019, with application number 201910354430.6, entitled “Batch transfer head and processing method thereof”, the entire contents of which are incorporated herein by reference.

Technical field

The present application relates to the field of display technology, and more specifically, to a batch transfer head and a processing method thereof.

Micro-LED has technological features such as long life, high reliability, high brightness, and low power consumption compared to the current display technology, and is expected to be widely applied in fields such as automobiles, wearables, and indoor/outdoor ultra-large screens, and is currently emerging as a hot issue and cutting-edge in the development of display technology. Currently, when processing LED chips of a Micro-LED display panel, they are generally formed in batches on a carrier board, and then the LED chips on the carrier board are transferred in batches. During the LED chip transfer process, the number of LED chips transferred at one time has a very important influence on the transfer efficiency of the LED chips and the processing efficiency and cost of the display panel.

In order to increase the quantity transferred in batches, the present application provides a batch transfer head and a method for processing the same.

A batch transfer head according to a first aspect of an embodiment of the present application comprises an elastic substrate base and a rigid suction head group, wherein the rigid suction head group comprises a plurality of rigid suction heads, and the rigid suction head group is arranged on the elastic substrate, such that the position of each rigid suction head included in the rigid suction head group is adjusted by deformation of the elastic substrate.

A method for processing a batch transfer head according to the second aspect of the embodiment of the present application is as follows:

Step of obtaining supporting materials;

A step of forming a rigid suction head group including a plurality of rigid suction heads on the above-mentioned supporting substrate;

A step of forming an elastic substrate on one side of the rigid suction head group that is separated from the support substrate;

A step of forming a substrate on one side of the elastic substrate that is away from the support substrate; and

A step of removing the above-mentioned support material to obtain the above-mentioned batch transfer head is included.

The present application adjusts the position of each rigid suction head of a rigid suction head group by deformation of an elastic substrate so that it can be attached to a corresponding target chip for transfer, thereby reducing the occurrence of poor attachment or non-attachment due to deviation in the processing of the target chip for transfer, and increasing the number of target chips that can be absorbed by the rigid suction head group, thereby improving the transfer efficiency.

Figure 1 is a drawing showing the structure of a batch transfer head according to an exemplary embodiment of the present application.
Figure 2 is a drawing showing the structure of another batch transfer head with a reinforcement layer added to the exemplary embodiment of Figure 1.
FIG. 3 is a drawing showing the structure of another batch transfer head with a buffer layer added to the exemplary embodiment of FIG. 1.
Figure 4 is a flow chart of a processing method of a batch transfer head according to an exemplary embodiment of the present application.
FIG. 5 is a drawing showing a first processing state of a batch transfer head according to an exemplary embodiment of the present application.
FIG. 6 is a drawing showing a second processing state of a batch transfer head according to an exemplary embodiment of the present application.
FIG. 7 is a drawing showing a third processing state of a batch transfer head according to an exemplary embodiment of the present application.
FIG. 8 is a drawing showing a fourth processing state of a batch transfer head according to an exemplary embodiment of the present application.
FIG. 9 is a drawing showing a fifth processing state of a batch transfer head according to an exemplary embodiment of the present application.

Hereinafter, in order to more clearly explain the purpose, technical solution and advantages of the present application, the present application will be described in more detail with reference to examples and the attached drawings. It should be understood that the specific examples described in this specification are only for the purpose of explaining the present application and are not intended to limit the present application.

Conventionally, when processing LED chips of a Micro-LED display panel, LED chips are generally formed in batches on a carrier board, and then the LED chips on the carrier board are transferred in batches. Although the LED chips are formed in batches on a carrier board, the heights of the LED chips formed on the carrier board are not constant due to the process influences during the formation of the carrier board and the process influences during the formation of each LED chip. Accordingly, when the LED chips are transferred in batches, poor attachment or non-attachment occurs between each probe and the corresponding LED chip, making it impossible to transfer the LED chips quickly and efficiently. Therefore, it is urgent to solve technical problems that need to be solved by compensating for the difference in the height of the LED chips, improving the attachment strength between the transfer head and each LED chip, and improving the transfer efficiency and quality.

In consideration of this, the present application provides a batch transfer head capable of batch transferring target chips on a carrier board and reducing the probability of transfer failure due to a difference in height of the target chips.

Referring to FIG. 1, a batch transfer head (100) according to one embodiment of the present invention may include an elastic substrate (110) and a rigid suction head group (120). The rigid suction head group (120) may include a plurality of rigid suction heads (121), and for example, as shown in FIG. 1, the rigid suction head group (120) may include two rigid suction heads (121). Each rigid suction head (121) included in the rigid suction head group (120) is all arranged on the elastic substrate (110), so that when the batch transfer head (100) acts on the carrier board to attach a transfer target chip on the carrier board, if there is a difference in the height of the transfer target chip, the elastic substrate (110) of the batch transfer head (100) is deformed to a different degree, so that the position of each rigid suction head (121) of the rigid suction head group (120) is adjusted through the deformation of the elastic substrate (110) so that it can attach to the corresponding transfer target chip, thereby reducing the occurrence of poor attachment or non-attachment due to deviation in the processing of the transfer target chip, and increasing the number of transfer target chips that the rigid suction head group (120) can adsorb, thereby improving the transfer efficiency. The above elastic substrate (110) may be made of an organic material, and may be made of, for example, one or more selected from the group consisting of polydimethylsiloxane, silicone rubber, and polyurethane; furthermore, the above elastic substrate (110) may be made of another deformable material, and a description thereof will be omitted.

The thickness of the elastic substrate (110) may be set according to the height difference between the plurality of elements that are batch transport targets arranged on the same plane. For example, the thickness of the elastic substrate (110) may be greater than the height difference between the plurality of elements that are batch transport targets arranged on the same plane, or the elastic deformation amount in the thickness direction of the elastic substrate (110) may be greater than the height difference between the plurality of elements that are batch transport targets arranged on the same plane. The plurality of elements may be a plurality of LED chips formed on one carrier board.

The above-described batch transfer head (100) may further include a substrate (130), and an elastic substrate (110) may be disposed on the substrate (130), and the elastic substrate (110) is positioned between the substrate (130) and the rigid suction head group (120), so as to support the elastic substrate (110) with the substrate (130), thereby preventing the elastic substrate (110) from expanding toward a side away from the rigid suction head group (120) when deformed, thereby not matching with target chips of different heights. The substrate (130) may be a rigid substrate, and may include, for example, a glass substrate, a substrate made of an inorganic material, or a substrate made of a metal material.

Each rigid suction head (121) included in the rigid suction head group (120) may include a first electrode (1211) and a second electrode (1212) spaced apart from each other, and the first electrode (1211) and the second electrode (1212) may interact to generate charges so as to suction a chip to be transferred.

The batch transfer head (100) may further include an insulating layer (140), and the insulating layer (140) may cover the first electrode (1211) and the second electrode (1212), and the first electrode (1211) and the second electrode (1212) are positioned between the insulating layer (140) and the elastic substrate (110).

There is a gap between the first electrode (1211) and the second electrode (1212), so that when a positive voltage is applied to one of the first electrode (1211) and the second electrode (1212) and a negative voltage is applied to the other, charges are induced and generated between the first electrode (1211) and the second electrode (1212) and on the insulating layer (140), so that the corresponding target chip to be transferred can be adsorbed. A method for forming the first electrode (1211) and the second electrode (1212) may include depositing an entire metal layer in advance and then patterning the metal layer to obtain the first electrode (1211) and the second electrode (1212) included in each rigid adsorption head (121).

In one embodiment, the insulating layer (140) may be arranged on the entire surface, that is, a plurality of or all of the rigid suction heads (121) on the rigid suction head group (120) share a single insulating layer (140), thereby reducing the molding process steps for the insulating layer (140) and improving production efficiency. In addition, in another embodiment, the batch transfer head (100) may include a plurality of insulating layers, wherein the plurality of insulating layers correspond one-to-one with the plurality of rigid suction heads (121) included in the rigid suction head group (120), for example, the plurality of insulating layers are spaced apart in parallel and the position of each insulating layer matches the position of the corresponding rigid suction head, thereby saving materials and reducing production costs. The insulating layer may be made of an inorganic insulating material, and may be made of, for example, preferably, one or more of silicon nitride and silicon oxide. Silicon nitride and silicon oxide have stable performance, are inexpensive, and can be easily obtained. Of course, in another embodiment, it may be made of other materials.

Referring to FIG. 2, the batch transfer head (100) may further include a reinforcing layer (150), and the reinforcing layer (150) is arranged corresponding to each rigid suction head (121) included in the rigid suction head group (120), and the reinforcing layer (150) is located between the elastic substrate (110) and the corresponding rigid suction head (121). Compared to a technical solution in which the elastic substrate (110) directly contacts the rigid suction head (121), a force directly applied to the rigid suction head (121) can be partially buffered by the reinforcing layer (150), thereby reducing the probability that the metal electrode included in the rigid suction head (121) will bend or break. Here, the reinforcing layer (150) may be formed of at least one selected from the group consisting of photoresist, silicon oxide, and spin-on glass (SOG), and is preferably formed of photoresist, and the photoresist is available in various types, has a wide range of choices, and has excellent performance.

Referring to FIG. 3, the batch transfer head (100) may further include a buffer layer (170) arranged on one side of the insulating layer (140) that is separated from the elastic substrate (110). The batch transfer head (100) adjusts the position of each rigid suction head (121) included in the rigid suction head group (120) by deformation of the elastic substrate (110) so that it can be attached to a corresponding transfer target chip, so that when the elastic substrate (110) is compressed, the chip receives pressure from the suction head, and the buffer layer (170) protects the chip from the influence of the pressure. The buffer layer may be made of an elastic material. The buffer layer (170) may be arranged on the entire surface, that is, a plurality of or all of the rigid suction heads (121) on the rigid suction head group (120) may share one buffer layer (140). In another embodiment, the batch transfer head (100) may also include a plurality of buffer layers, wherein the plurality of buffer layers may correspond one-to-one with a plurality of rigid suction heads (121) included in the rigid suction head group (120).

The present application also provides a method for processing a batch transfer head, and referring to FIG. 4, the method may include steps 301 to 305.

At step 301, a support material (160) is obtained.

Referring to FIG. 5, the support substrate (160) may include a carrier (e.g., a glass carrier) (161), a substrate layer (162) positioned on the carrier (161), and a photoresist pattern layer (163) formed on the substrate layer (162). The photoresist pattern layer (163) may have a plurality of recessed areas (1631) formed by a patterning process so as to plan in advance the arrangement method of a plurality of rigid suction heads (121) of the rigid suction head group (120). Then, the rigid suction heads (121) may be arranged within the recessed areas (1631). The substrate layer (162) may be made of polyimide. The above photoresist pattern layer (163) may be formed by patterning a photoresist applied on a substrate layer (162), and the photoresist pattern layer (163) may be removed, for example, through dry or wet cleaning.

In step 302, a rigid adsorption head group (120) is formed on a support substrate (160).

Before forming the rigid suction head group (120), as illustrated in FIG. 6, an insulating layer (140) may first be formed on the photoresist pattern layer (163), and the insulating layer (140) may be formed on the photoresist pattern layer (163) through a deposition process using an inorganic material. After the processing of the insulating layer (140) is completed, a metal layer may be deposited on one side of the insulating layer (140) that is away from the support substrate (160), and the metal layer may be patterned to obtain a rigid suction head group (120) including a plurality of rigid suction heads (121).

In step 303, an elastic substrate (110) is formed on one side of a rigid suction head group (120) that is separated from the support substrate (160).

Referring to FIG. 7, before forming the elastic substrate (110), a reinforcing layer (150) corresponding to each rigid suction head (121) can be formed based on the rigid suction head group (120). The reinforcing layer (150) can be formed of at least one selected from the group consisting of photoresist, silicon oxide, and spin-on glass (SOG). In addition, referring to FIG. 7, after the process of the reinforcing layer (150) is completed, at least one selected from the group consisting of polydimethylsiloxane, silicone rubber, and polyurethane can be applied based on the reinforcing layer (150) to form the elastic substrate (110).

In step 304, a substrate (130) is formed on one side of the elastic substrate (110) that is away from the support substrate (160).

Referring to FIG. 8, after forming an elastic substrate (110), a substrate (130) can be formed on one side of the elastic substrate (110) that is away from the support substrate (160).

At step 305, referring to FIG. 9, the support material (160) is removed to obtain a batch transfer head (100).

The carrier (161) can be peeled off with a laser, the substrate layer (162) can be removed by mechanical peeling or dry or wet, and the photoresist pattern layer (163) can be removed dry or wet, thereby obtaining a batch transfer head (100) as shown in FIG. 9.

The present application can avoid the influence of process temperature and environment on the elastic substrate (110) when processing the insulating layer (140), the rigid adsorption head group (120), and the reinforcing layer (150) through the processing order of the insulating layer (140), the rigid adsorption head group (120), the reinforcing layer (150), the elastic substrate (110), and the substrate (130).

Each technical feature of the embodiments described above may be arbitrarily combined, and for the sake of simplicity of explanation, not all possible combinations of each technical feature in the embodiments described above are described, but as long as there is no contradiction between combinations of these technical features, they should be considered to fall within the scope of the present specification.

The above-described embodiments are merely specific examples of the present application, and while the description thereof is specific and detailed, it is not intended to limit the scope of the present application. Those skilled in the art will be able to make various modifications and variations without departing from the spirit of the present invention, and all of these fall within the scope of the claims of the present invention. Accordingly, the scope of the present application is determined by the scope of the appended claims.

Claims (18)

substrate;
An elastic substrate disposed on the substrate; and
A rigid suction head group including a plurality of rigid suction heads, wherein the rigid suction head group is arranged on the elastic substrate, and the position of each rigid suction head in the rigid suction head group is adjusted by deformation of the elastic substrate;
A buffer layer disposed on one side of the group of rigid suction heads away from the elastic substrate and arranged in one-to-one correspondence with the plurality of rigid suction heads; and
A reinforcing layer is inserted and placed in the elastic substrate corresponding to each of the rigid suction heads of the rigid suction head group, and is positioned between the elastic substrate and the corresponding rigid suction head,
The above elastic substrate is positioned between the substrate and the rigid suction head group,
The above rigid adsorption head comprises a first electrode and a second electrode made of metal which are separated from each other,
A batch transfer head, characterized in that the elastic substrate and the reinforcing layer are made of different materials.
delete In the first paragraph,
A batch transfer head, characterized in that the first electrode and the second electrode of each of the above rigid suction heads can interact to generate charges so as to suction a transfer target element.
In the third paragraph,
Further comprising an insulating layer covering the first electrode and the second electrode,
The first electrode and the second electrode are positioned between the insulating layer and the elastic substrate,
A batch transfer head characterized in that when a positive voltage is applied to one of the first electrode and the second electrode and a negative voltage is applied to the other, a charge is induced and generated on the surface of the insulating layer to adsorb the target transfer element.
In paragraph 4,
All of the rigid suction heads within the above rigid suction head group share one insulating layer; or
A batch transfer head, characterized in that the insulating layer is made of at least one of silicon nitride and silicon oxide.
In the first paragraph,
A batch transfer head, characterized in that the reinforcing layer is made of at least one selected from the group consisting of photoresist, silicon oxide, and liquid glass.
In any one of paragraphs 1, 3 to 6,
A batch transfer head, characterized in that the elastic substrate is made of at least one selected from the group consisting of polydimethylsiloxane, silicone rubber, and polyurethane.
In the first paragraph,
The thickness of the elastic substrate is greater than the height difference between multiple elements that are batch transport targets arranged on the same plane; or
A batch transfer head, characterized in that the elastic deformation in the thickness direction of the elastic substrate is greater than the height difference between a plurality of elements that are batch transfer targets arranged on the same plane.
A processing method of a batch transfer head according to Article 1,
Step of obtaining supporting materials;
A step of forming a buffer layer on the above supporting substrate;
A step of depositing a metal layer on one side of the buffer layer that is away from the support substrate and patterning the metal layer to form a rigid suction head group including a plurality of rigid suction heads;
A step of forming a reinforcing layer corresponding to each rigid suction head on one side of the rigid suction head group separated from the support substrate;
A step of forming an elastic substrate on one side of the rigid suction head group that is separated from the support substrate;
A step of forming a substrate on one side of the elastic substrate that is away from the support substrate; and
Including the step of removing the above support material to obtain a batch transfer head,
A method for processing a batch transfer head, wherein the reinforcing layer is positioned between the elastic substrate and the corresponding rigid suction head, and the elastic substrate and the reinforcing layer are made of different materials.
In Article 9,
The step of forming a rigid adsorption head group on the above support substrate is:
A step of forming an insulating layer on the above supporting substrate; and
A method for processing a batch transfer head, characterized in that it comprises a step of forming the rigid suction head group on one side of the insulating layer away from the supporting substrate. delete delete delete delete delete delete delete delete